TW200730596A - Composition for polishing semiconductor layers - Google Patents
Composition for polishing semiconductor layersInfo
- Publication number
- TW200730596A TW200730596A TW095142758A TW95142758A TW200730596A TW 200730596 A TW200730596 A TW 200730596A TW 095142758 A TW095142758 A TW 095142758A TW 95142758 A TW95142758 A TW 95142758A TW 200730596 A TW200730596 A TW 200730596A
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- semiconductor layers
- polishing semiconductor
- useful
- weight percent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/301,781 US20070131899A1 (en) | 2005-12-13 | 2005-12-13 | Composition for polishing semiconductor layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200730596A true TW200730596A (en) | 2007-08-16 |
Family
ID=38138368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095142758A TW200730596A (en) | 2005-12-13 | 2006-11-20 | Composition for polishing semiconductor layers |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20070131899A1 (zh) |
| JP (1) | JP2007180534A (zh) |
| KR (1) | KR20070062917A (zh) |
| CN (1) | CN1982393A (zh) |
| TW (1) | TW200730596A (zh) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080276543A1 (en) * | 2007-05-08 | 2008-11-13 | Thomas Terence M | Alkaline barrier polishing slurry |
| US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
| CN102101980B (zh) * | 2009-12-18 | 2015-12-02 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
| JP2013038095A (ja) * | 2011-08-03 | 2013-02-21 | Elpida Memory Inc | 半導体装置の製造方法 |
| TWI659088B (zh) * | 2014-03-18 | 2019-05-11 | Fujifilm Electronic Materials U. S. A., Inc. | 蝕刻組成物 |
| US11111435B2 (en) * | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| CN110683762B (zh) * | 2019-11-25 | 2022-08-09 | 临沂晶石陶瓷有限公司 | 一种陶瓷用大红釉料及其制备方法 |
| KR20230172348A (ko) * | 2022-06-15 | 2023-12-22 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| CN120507379A (zh) * | 2025-07-16 | 2025-08-19 | 西北有色金属宝鸡创新研究院 | 一种难熔金属增强铜基复合材料ebsd样品的制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266088A (en) * | 1992-09-23 | 1993-11-30 | Nicsand | Water-based polish |
| TW469579B (en) * | 1998-09-19 | 2001-12-21 | Winbond Electronics Corp | Method for producing shallow trench isolation (STI) |
| JP2001160558A (ja) * | 1999-12-02 | 2001-06-12 | Nec Corp | 半導体装置の製造方法及び製造装置 |
| JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
| US7037352B2 (en) * | 2000-12-12 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Polishing particle and method for producing polishing particle |
| US7300478B2 (en) * | 2003-05-22 | 2007-11-27 | Ferro Corporation | Slurry composition and method of use |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US20050104048A1 (en) * | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
-
2005
- 2005-12-13 US US11/301,781 patent/US20070131899A1/en not_active Abandoned
-
2006
- 2006-11-20 TW TW095142758A patent/TW200730596A/zh unknown
- 2006-12-11 KR KR1020060125468A patent/KR20070062917A/ko not_active Withdrawn
- 2006-12-12 CN CNA2006101690300A patent/CN1982393A/zh active Pending
- 2006-12-13 JP JP2006335264A patent/JP2007180534A/ja active Pending
-
2007
- 2007-03-15 US US11/724,443 patent/US20070163998A1/en not_active Abandoned
-
2009
- 2009-07-15 US US12/503,329 patent/US20090280724A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN1982393A (zh) | 2007-06-20 |
| KR20070062917A (ko) | 2007-06-18 |
| US20070131899A1 (en) | 2007-06-14 |
| US20070163998A1 (en) | 2007-07-19 |
| US20090280724A1 (en) | 2009-11-12 |
| JP2007180534A (ja) | 2007-07-12 |
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