TW200730596A - Composition for polishing semiconductor layers - Google Patents

Composition for polishing semiconductor layers

Info

Publication number
TW200730596A
TW200730596A TW095142758A TW95142758A TW200730596A TW 200730596 A TW200730596 A TW 200730596A TW 095142758 A TW095142758 A TW 095142758A TW 95142758 A TW95142758 A TW 95142758A TW 200730596 A TW200730596 A TW 200730596A
Authority
TW
Taiwan
Prior art keywords
composition
semiconductor layers
polishing semiconductor
useful
weight percent
Prior art date
Application number
TW095142758A
Other languages
English (en)
Inventor
Jin-Ru Bian
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200730596A publication Critical patent/TW200730596A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095142758A 2005-12-13 2006-11-20 Composition for polishing semiconductor layers TW200730596A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/301,781 US20070131899A1 (en) 2005-12-13 2005-12-13 Composition for polishing semiconductor layers

Publications (1)

Publication Number Publication Date
TW200730596A true TW200730596A (en) 2007-08-16

Family

ID=38138368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142758A TW200730596A (en) 2005-12-13 2006-11-20 Composition for polishing semiconductor layers

Country Status (5)

Country Link
US (3) US20070131899A1 (zh)
JP (1) JP2007180534A (zh)
KR (1) KR20070062917A (zh)
CN (1) CN1982393A (zh)
TW (1) TW200730596A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
CN102101980B (zh) * 2009-12-18 2015-12-02 安集微电子(上海)有限公司 一种化学机械抛光液
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
JP2013038095A (ja) * 2011-08-03 2013-02-21 Elpida Memory Inc 半導体装置の製造方法
TWI659088B (zh) * 2014-03-18 2019-05-11 Fujifilm Electronic Materials U. S. A., Inc. 蝕刻組成物
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
CN110683762B (zh) * 2019-11-25 2022-08-09 临沂晶石陶瓷有限公司 一种陶瓷用大红釉料及其制备方法
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
CN120507379A (zh) * 2025-07-16 2025-08-19 西北有色金属宝鸡创新研究院 一种难熔金属增强铜基复合材料ebsd样品的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266088A (en) * 1992-09-23 1993-11-30 Nicsand Water-based polish
TW469579B (en) * 1998-09-19 2001-12-21 Winbond Electronics Corp Method for producing shallow trench isolation (STI)
JP2001160558A (ja) * 1999-12-02 2001-06-12 Nec Corp 半導体装置の製造方法及び製造装置
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7037352B2 (en) * 2000-12-12 2006-05-02 Showa Denko Kabushiki Kaisha Polishing particle and method for producing polishing particle
US7300478B2 (en) * 2003-05-22 2007-11-27 Ferro Corporation Slurry composition and method of use
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment

Also Published As

Publication number Publication date
CN1982393A (zh) 2007-06-20
KR20070062917A (ko) 2007-06-18
US20070131899A1 (en) 2007-06-14
US20070163998A1 (en) 2007-07-19
US20090280724A1 (en) 2009-11-12
JP2007180534A (ja) 2007-07-12

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