TW200731016A - Composition for forming upper film and method for forming photoresist pattern - Google Patents

Composition for forming upper film and method for forming photoresist pattern

Info

Publication number
TW200731016A
TW200731016A TW095139750A TW95139750A TW200731016A TW 200731016 A TW200731016 A TW 200731016A TW 095139750 A TW095139750 A TW 095139750A TW 95139750 A TW95139750 A TW 95139750A TW 200731016 A TW200731016 A TW 200731016A
Authority
TW
Taiwan
Prior art keywords
forming
composition
film
photoresist
upper film
Prior art date
Application number
TW095139750A
Other languages
Chinese (zh)
Other versions
TWI418942B (en
Inventor
Atsushi Nakamura
Hiroki Nakagawa
Hiromitsu Nakashima
Takayuki Tsuji
Hiroshi Dougauchi
Daita Kouno
Yukio Nishimura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=37967747&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200731016(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200731016A publication Critical patent/TW200731016A/en
Application granted granted Critical
Publication of TWI418942B publication Critical patent/TWI418942B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Disclosed is a composition for forming upper films which enables to form a coating film on a photoresist without causing intermixing with the photoresist film, the coating film is stable and does not dissolve into a medium such as water during immersion exposure, while being easily dissolved in an alkaline developing solution. Also disclosed is a method for forming a photoresist pattern. Specifically disclosed is a composition for forming an upper film, which covers a photoresist film for forming a pattern through irradiation of radiation. This composition is obtained by dissolving a resin, which is soluble in a developing solution for developing the photoresist film in a solvent. The solvent has a viscosity at 20 DEG C of less than 5.2 10<-3> Pas, and does not cause intermixing between the photoresist film and the composition for forming an upper film. In addition, the solvent contains ether or a hydrocarbon.
TW095139750A 2005-10-27 2006-10-27 Formation method of upper layer film forming composition and photoresist pattern TWI418942B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005312775 2005-10-27
JP2006085223 2006-03-27

Publications (2)

Publication Number Publication Date
TW200731016A true TW200731016A (en) 2007-08-16
TWI418942B TWI418942B (en) 2013-12-11

Family

ID=37967747

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139750A TWI418942B (en) 2005-10-27 2006-10-27 Formation method of upper layer film forming composition and photoresist pattern

Country Status (6)

Country Link
US (2) US8076053B2 (en)
EP (1) EP1950610B1 (en)
JP (2) JP5050855B2 (en)
KR (2) KR100962951B1 (en)
TW (1) TWI418942B (en)
WO (1) WO2007049637A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
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TWI492980B (en) * 2010-02-19 2015-07-21 Ibm Sulfonamide-containing topcoat and photoresist additive compositions and methods of use
TWI627222B (en) * 2013-01-24 2018-06-21 日產化學工業股份有限公司 Composition for forming photoresist upper layer film for lithography etching and method for manufacturing semiconductor device using the same
CN116144016A (en) * 2021-11-23 2023-05-23 上海新阳半导体材料股份有限公司 A kind of additive for 193nm dry process photoresist and its preparation method and application

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EP1806370B1 (en) * 2004-09-30 2013-05-22 JSR Corporation Copolymer and upper film-forming composition
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WO2007049637A1 (en) * 2005-10-27 2007-05-03 Jsr Corporation Composition for forming upper film and method for forming photoresist pattern
JP4687893B2 (en) * 2005-11-21 2011-05-25 信越化学工業株式会社 Resist protective film material and pattern forming method
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TWI598223B (en) * 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 Composition and process for photo lithography
EP2003148B1 (en) 2006-03-31 2017-07-19 JSR Corporation Radiation-sensitive resin composition comprising a fluorine-containing polymer
WO2008035640A1 (en) * 2006-09-20 2008-03-27 Tokyo Ohka Kogyo Co., Ltd. Composition for formation of resist protection film, and method for formation of resist pattern using the same
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JP5088326B2 (en) 2006-10-13 2012-12-05 Ｊｓｒ株式会社 Upper layer film forming composition and photoresist pattern forming method
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JP5010569B2 (en) 2008-01-31 2012-08-29 信越化学工業株式会社 Resist protective film material and pattern forming method
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JP5267093B2 (en) * 2008-12-08 2013-08-21 Ｊｓｒ株式会社 Upper layer film forming composition, upper layer film and pattern forming method
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
TW201118505A (en) * 2009-09-15 2011-06-01 Jsr Corp Upper layer film forming composition and method for forming photoresist pattern
KR20110079045A (en) * 2009-12-31 2011-07-07 제일모직주식회사 (Meth) acrylate compound, a composition for forming a polymer and a protective film comprising a repeating unit derived therefrom
US9223209B2 (en) * 2010-02-19 2015-12-29 International Business Machines Corporation Sulfonamide-containing photoresist compositions and methods of use
WO2011118644A1 (en) * 2010-03-23 2011-09-29 Jsr株式会社 Surface layer film-forming composition and resist pattern formation method
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JP5621735B2 (en) * 2010-09-03 2014-11-12 信越化学工業株式会社 Pattern forming method and chemically amplified positive resist material
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JP6341380B2 (en) * 2012-09-07 2018-06-13 日産化学工業株式会社 Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device using the same
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JP6267532B2 (en) 2014-02-14 2018-01-24 信越化学工業株式会社 Resist protective film material and pattern forming method
US9977331B2 (en) 2014-02-26 2018-05-22 Nissan Chemical Industries, Ltd. Resist overlayer film forming composition and method for producing semiconductor device including the same
JP6690535B2 (en) 2014-07-24 2020-04-28 日産化学株式会社 Resist upper layer film forming composition and semiconductor device manufacturing method using the same
JP6426936B2 (en) * 2014-07-31 2018-11-21 東京エレクトロン株式会社 Substrate cleaning method and storage medium
JP6548790B2 (en) * 2014-07-31 2019-07-24 東京エレクトロン株式会社 Substrate cleaning system, substrate cleaning method and storage medium
JP2015092278A (en) * 2015-01-14 2015-05-14 Jsr株式会社 Upper layer film forming composition for liquid immersion and resist pattern forming method
CN106556972B (en) * 2015-09-30 2021-07-27 罗门哈斯电子材料韩国有限公司 Overcoat compositions and methods for photolithography
JP6274294B2 (en) * 2016-11-11 2018-02-07 Jsr株式会社 Resist pattern forming method and protective film forming composition
KR102795102B1 (en) 2021-07-01 2025-04-11 삼성에스디아이 주식회사 Resist topcoat composition, and method of forming patterns using the composition
KR102795110B1 (en) 2021-07-01 2025-04-10 삼성에스디아이 주식회사 Resist topcoat composition, and method of forming patterns using the composition
KR102795108B1 (en) * 2021-09-09 2025-04-10 삼성에스디아이 주식회사 Resist topcoat composition, and method of forming patterns using the composition
CN116144015B (en) * 2021-11-23 2024-11-19 上海新阳半导体材料股份有限公司 193Nm dry photoresist additive and preparation method and application thereof
CN116144014B (en) * 2021-11-23 2025-02-14 上海新阳半导体材料股份有限公司 A 193nm dry-process photoresist additive and its preparation method and application
JP2024120472A (en) * 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method, substrate processing apparatus, and processing solution
JP2024120473A (en) 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method, substrate processing apparatus, processing liquid, and processing liquid evaluation method

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Publication number Priority date Publication date Assignee Title
TWI492980B (en) * 2010-02-19 2015-07-21 Ibm Sulfonamide-containing topcoat and photoresist additive compositions and methods of use
TWI627222B (en) * 2013-01-24 2018-06-21 日產化學工業股份有限公司 Composition for forming photoresist upper layer film for lithography etching and method for manufacturing semiconductor device using the same
CN116144016A (en) * 2021-11-23 2023-05-23 上海新阳半导体材料股份有限公司 A kind of additive for 193nm dry process photoresist and its preparation method and application

Also Published As

Publication number Publication date
JPWO2007049637A1 (en) 2009-04-30
KR101428121B1 (en) 2014-08-07
US20120028198A1 (en) 2012-02-02
EP1950610B1 (en) 2012-05-02
WO2007049637A1 (en) 2007-05-03
KR20090091810A (en) 2009-08-28
JP5050855B2 (en) 2012-10-17
KR100962951B1 (en) 2010-06-10
KR20080056321A (en) 2008-06-20
EP1950610A4 (en) 2010-08-04
EP1950610A1 (en) 2008-07-30
TWI418942B (en) 2013-12-11
JP5578189B2 (en) 2014-08-27
US8076053B2 (en) 2011-12-13
JP2012103738A (en) 2012-05-31
US8435718B2 (en) 2013-05-07
US20100003615A1 (en) 2010-01-07

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