TW200733557A - Power transistor switching device and method for functional testing of a power transistor switching device such as this - Google Patents

Power transistor switching device and method for functional testing of a power transistor switching device such as this

Info

Publication number
TW200733557A
TW200733557A TW095144294A TW95144294A TW200733557A TW 200733557 A TW200733557 A TW 200733557A TW 095144294 A TW095144294 A TW 095144294A TW 95144294 A TW95144294 A TW 95144294A TW 200733557 A TW200733557 A TW 200733557A
Authority
TW
Taiwan
Prior art keywords
gate
switching device
power transistor
transistor switching
power
Prior art date
Application number
TW095144294A
Other languages
Chinese (zh)
Inventor
Klaus Voigtlaender
Siegbert Steinlechner
Christian Pluntke
Antoine Chabaud
Valentin Tils
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of TW200733557A publication Critical patent/TW200733557A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention relates to a power transistor switching device which has: a power transistor (6, 7) with an insulated gate (G) and having a first and second power electrode (S,D; E,C), and a gate resistance device (Rg), which is connected between the gate (G) and the second power electrode (S, E), in which case the power electrodes can be connected via power electrode connecting contacts (3s, 3d, 3c, 3e, 3c) to a power circuit having a DC source (5) and a DC load (4), the gate (G) can be connected via a gate connecting contact (3g) to a drive device (2), and the gate resistance device (Rg) is connected in a gate-side link (k1) to the gate (G) and in a second link (k2) to the second power electrode (S, E), and the gate-side link (k1) is arranged between the gate (G) and the gate connecting contact (3g). A circuit arrangement having a power transistor switching device such as this, and a method for functional testing of a power transistor switching device such as this, are also provided. According to the invention, any interruption in the contact with the gate during operation can be determined with little complexity.
TW095144294A 2005-12-02 2006-11-30 Power transistor switching device and method for functional testing of a power transistor switching device such as this TW200733557A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005057577A DE102005057577A1 (en) 2005-12-02 2005-12-02 Power transistor switching device and method for functional testing of such a power transistor switching device

Publications (1)

Publication Number Publication Date
TW200733557A true TW200733557A (en) 2007-09-01

Family

ID=37714580

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144294A TW200733557A (en) 2005-12-02 2006-11-30 Power transistor switching device and method for functional testing of a power transistor switching device such as this

Country Status (3)

Country Link
DE (1) DE102005057577A1 (en)
TW (1) TW200733557A (en)
WO (1) WO2007062979A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113883318A (en) * 2021-09-30 2022-01-04 东风商用车有限公司 PWM driving method and system of AMT electromagnetic valve

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010001941A1 (en) 2010-02-15 2011-08-18 Robert Bosch GmbH, 70469 Method for operating a brake-boosted hydraulic brake system of a vehicle and control device for a brake-boosted hydraulic brake system of a vehicle
DE102011079765A1 (en) 2011-07-25 2013-01-31 Robert Bosch Gmbh Apparatus and method for continuously checking an electrical connection and an analog-to-digital converter
DE102020103874B3 (en) * 2020-02-14 2021-06-10 Infineon Technologies Ag PROCEDURE AND CIRCUIT FOR CHECKING THE FUNCTIONALITY OF A TRANSISTOR COMPONENT

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817377A (en) * 1981-07-24 1983-02-01 Hitachi Ltd Continuity testing device for flat cable
JPS58147233A (en) * 1982-02-26 1983-09-02 Yokogawa Hokushin Electric Corp Analog input device
JPS58200171A (en) * 1982-05-17 1983-11-21 Shinko Kosen Kogyo Kk How to detect disconnection of anti-corrosion cable
JPH0930395A (en) * 1995-07-20 1997-02-04 Aisin Seiki Co Ltd Stop switch Monitor wire disconnection failure detection device
US5920452A (en) * 1998-06-01 1999-07-06 Harris Corporation Circuit and method for protecting from overcurrent conditions and detecting an open electrical load
DE10019612B4 (en) * 2000-04-19 2004-07-22 Lear Automotive Electronics Gmbh Method for diagnosing the switching state and the load of a semiconductor switch
DE10149777A1 (en) * 2001-10-09 2003-04-24 Bosch Gmbh Robert Semiconductor circuit structure for motor vehicle ignition has a semiconductor power circuit breaker with main connections, a control connection, a clamping diode device to clamp on an external voltage and a control circuit.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113883318A (en) * 2021-09-30 2022-01-04 东风商用车有限公司 PWM driving method and system of AMT electromagnetic valve
CN113883318B (en) * 2021-09-30 2024-02-02 东风商用车有限公司 PWM driving method and system of AMT electromagnetic valve

Also Published As

Publication number Publication date
WO2007062979A1 (en) 2007-06-07
DE102005057577A1 (en) 2007-06-06

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