TW200735206A - Method of dry etching of interlayer insulation film and etching device - Google Patents
Method of dry etching of interlayer insulation film and etching deviceInfo
- Publication number
- TW200735206A TW200735206A TW095108291A TW95108291A TW200735206A TW 200735206 A TW200735206 A TW 200735206A TW 095108291 A TW095108291 A TW 095108291A TW 95108291 A TW95108291 A TW 95108291A TW 200735206 A TW200735206 A TW 200735206A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- dry etching
- insulation film
- interlayer insulation
- gas
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 title abstract 2
- 239000011229 interlayer Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 229910052794 bromium Inorganic materials 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200735206A true TW200735206A (en) | 2007-09-16 |
| TWI343601B TWI343601B (de) | 2011-06-11 |
Family
ID=45074892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200735206A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (zh) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
-
2006
- 2006-03-10 TW TW095108291A patent/TW200735206A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (zh) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
| CN110178206B (zh) * | 2016-12-30 | 2023-08-18 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI343601B (de) | 2011-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | The PCDD/F and PBDD/F pollution in the ambient atmosphere of Shanghai, China | |
| WO2007143585A3 (en) | Residue free hardmask trim | |
| TW200739720A (en) | High aspect ratio contacts | |
| WO2021262841A8 (en) | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures | |
| Li et al. | Long-term persistence of polychlorinated dibenzo-p-dioxins and dibenzofurans in air, soil and sediment around an abandoned pentachlorophenol factory in China | |
| TW200609667A (en) | Photomask blank, photomask and method for manufacturing same | |
| AR055558A1 (es) | Metodo para purificar cloruro de hidrogeno | |
| Hao et al. | Distribution, seasonal variation and inhalation risks of polychlorinated dibenzo-p-dioxins and dibenzofurans, polychlorinated biphenyls and polybrominated diphenyl ethers in the atmosphere of Beijing, China | |
| KR20170016279A (ko) | 구리층 및 티탄층을 포함하는 다층박막을 에칭하기 위한 에칭액 및 이것을 이용한 에칭방법, 그리고 이 에칭방법을 이용하여 얻어진 기판 | |
| EP1154468A3 (de) | Methode zur Abscheidung einer amorpher Kohlenstoffschicht | |
| EP2863258A3 (de) | Fotomaskenrohling und Verfahren zur Herstellung eines Fotomaskenrohlings | |
| TWI268735B (en) | Method for manufacturing display device and display device | |
| WO2008149988A1 (ja) | パターニング方法 | |
| TWI263665B (en) | Liquid coating composition for forming a top antireflective film and photoresist laminate using the same, as well as method for forming photoresist pattern | |
| TW200707573A (en) | A composition of etching reagent for metal material and a method for fabricating a semiconductor device by using the same | |
| MY150187A (en) | Trilayer resist organic layer etch | |
| TW200511446A (en) | Liquid for removing degenerated metal layer, and method for removing degenerated metal layer | |
| TW200737362A (en) | Semiconductor device and method for incorporating a halogen in a dielectric | |
| TW200735206A (en) | Method of dry etching of interlayer insulation film and etching device | |
| US20140073139A1 (en) | Etching gas and etching method | |
| WO2004066027A3 (en) | Electron beam processing for mask repair | |
| TW200619873A (en) | Method for stripping photoresist from etched wafer | |
| Wang et al. | Real-time emission characteristics, health risks, and olfactory effects of VOCs released from soil disturbance during the remediation of an abandoned chemical pesticide industrial site | |
| Kim et al. | Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer | |
| EP2998793A3 (de) | Fotomaskenrohling |