TW200739247A - Photomask blank and photomask, and their manufacturing method - Google Patents

Photomask blank and photomask, and their manufacturing method

Info

Publication number
TW200739247A
TW200739247A TW096106700A TW96106700A TW200739247A TW 200739247 A TW200739247 A TW 200739247A TW 096106700 A TW096106700 A TW 096106700A TW 96106700 A TW96106700 A TW 96106700A TW 200739247 A TW200739247 A TW 200739247A
Authority
TW
Taiwan
Prior art keywords
shading film
photomask
wet etching
pattern
etching treatment
Prior art date
Application number
TW096106700A
Other languages
Chinese (zh)
Other versions
TWI417645B (en
Inventor
Takeyuki Yamada
Masaru Mitsui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200739247A publication Critical patent/TW200739247A/en
Application granted granted Critical
Publication of TWI417645B publication Critical patent/TWI417645B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided are a photomask blank and a photomask, which can form a pattern of a shading film having an excellent sectional shape by optimizing the wet etching characteristics of the shading film, and which can form a pattern of a shading film having extremely small jaggies. The photomask blank having the shading film on a transparent substrate is provided for a wet etching treatment exemplifying a mask by a mask pattern formed on the shading film. This wet etching treatment matches a photomask manufacturing method for patterning the shading film. This shading film is made of a material containing chromium, and has a crystal size of 10 nm or less, as calculated from a diffraction peak of CrN(200) by an X-ray diffraction. The shading film is patterned by the wet etching treatment, to produce a photomask having the shading film pattern on the substrate.
TW096106700A 2006-02-28 2007-02-27 Mask mask and mask, and its manufacturing methods TWI417645B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006052621 2006-02-28

Publications (2)

Publication Number Publication Date
TW200739247A true TW200739247A (en) 2007-10-16
TWI417645B TWI417645B (en) 2013-12-01

Family

ID=38459016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106700A TWI417645B (en) 2006-02-28 2007-02-27 Mask mask and mask, and its manufacturing methods

Country Status (4)

Country Link
JP (1) JP5412107B2 (en)
KR (2) KR101248740B1 (en)
TW (1) TWI417645B (en)
WO (1) WO2007099910A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI629557B (en) * 2015-03-27 2018-07-11 Ｈｏｙａ股份有限公司 Photomask blanks and manufacturing method of photomasks using the same, and manufacturing method of display devices

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KR100390007B1 (en) * 2002-02-05 2003-07-04 주식회사 엔비자인 The mineral preservation was the water Purification method which a namo filtration
JP2008203373A (en) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk Halftone blanks and method for producing halftone blanks
JP6594742B2 (en) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 Photomask blank, photomask manufacturing method using the same, and display device manufacturing method
JP6540278B2 (en) * 2015-06-29 2019-07-10 大日本印刷株式会社 Optical element manufacturing method
JP7113724B2 (en) * 2017-12-26 2022-08-05 Hoya株式会社 Method for manufacturing photomask blank and photomask, and method for manufacturing display device
WO2020261986A1 (en) * 2019-06-27 2020-12-30 Hoya株式会社 Thin film-attached substrate, multilayered reflective film-attached substrate, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP7154626B2 (en) * 2019-11-26 2022-10-18 Hoya株式会社 MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KR102444967B1 (en) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 Blank mask and photomask using same
KR102503790B1 (en) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 Blank mask and photomask using the same
CN116288143A (en) * 2023-03-17 2023-06-23 深圳奥卓真空设备技术有限公司 An optical bistable coating process

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JP2699518B2 (en) * 1989-02-14 1998-01-19 凸版印刷株式会社 Photomask and photomask blank
JP2785313B2 (en) * 1989-04-05 1998-08-13 凸版印刷株式会社 Photomask blank and photomask
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Photomask blank manufacturing method
JPH07118829A (en) * 1993-10-19 1995-05-09 Nissin Electric Co Ltd Chromium nitride film coated base body and its production
TW350933B (en) * 1996-11-23 1999-01-21 Lg Semicon Co Ltd X-ray absorbing layer in the X-ray mask and the manufacturing method
JPH11172426A (en) * 1997-12-05 1999-06-29 Ulvac Corp Film formation capable of regulating crystal orientation propety of thin film
WO2000007072A1 (en) * 1998-07-31 2000-02-10 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP4256038B2 (en) * 1999-09-21 2009-04-22 株式会社東芝 Heat treatment method
JP2002189280A (en) * 2000-12-19 2002-07-05 Hoya Corp Gray tone mask and method for producing the same
JP4158885B2 (en) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 Photomask blank manufacturing method
KR100779956B1 (en) * 2002-12-03 2007-11-28 호야 가부시키가이샤 Photomask Blanks and Photomask Manufacturing Method
JP3934115B2 (en) * 2003-03-26 2007-06-20 Ｈｏｙａ株式会社 Photomask substrate, photomask blank, and photomask
JP2005101226A (en) * 2003-09-24 2005-04-14 Hoya Corp Substrate holding apparatus, substrate processing apparatus, substrate inspection apparatus, and substrate holding method
JP2005317929A (en) * 2004-03-29 2005-11-10 Hoya Corp Positive resist film peeling method, exposure mask manufacturing method, and resist peeling apparatus
EP1584979A1 (en) * 2004-04-08 2005-11-15 Schott AG Mask blank having a protection layer
JP4361830B2 (en) * 2004-05-13 2009-11-11 信越化学工業株式会社 Method for evaluating in-plane distribution of resist pattern dimensions, photomask blank manufacturing method, photomask blank, and resist pattern forming process management method
JPWO2006006318A1 (en) * 2004-06-02 2008-04-24 Hoya株式会社 Mask blanks, manufacturing method thereof, and transfer plate manufacturing method
JP2005010814A (en) * 2004-10-01 2005-01-13 Hoya Corp Gray tone mask and method for producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI629557B (en) * 2015-03-27 2018-07-11 Ｈｏｙａ股份有限公司 Photomask blanks and manufacturing method of photomasks using the same, and manufacturing method of display devices

Also Published As

Publication number Publication date
JPWO2007099910A1 (en) 2009-07-16
WO2007099910A1 (en) 2007-09-07
KR101071471B1 (en) 2011-10-10
KR20080106307A (en) 2008-12-04
KR101248740B1 (en) 2013-03-28
TWI417645B (en) 2013-12-01
JP5412107B2 (en) 2014-02-12
KR20100124333A (en) 2010-11-26

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