TW200743238A - Method for forming fine pattern of semiconductor device - Google Patents

Method for forming fine pattern of semiconductor device

Info

Publication number
TW200743238A
TW200743238A TW096100765A TW96100765A TW200743238A TW 200743238 A TW200743238 A TW 200743238A TW 096100765 A TW096100765 A TW 096100765A TW 96100765 A TW96100765 A TW 96100765A TW 200743238 A TW200743238 A TW 200743238A
Authority
TW
Taiwan
Prior art keywords
organic film
organic
mask patterns
underlying layer
semiconductor device
Prior art date
Application number
TW096100765A
Other languages
Chinese (zh)
Other versions
TWI326502B (en
Inventor
Jae-Chang Jung
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200743238A publication Critical patent/TW200743238A/en
Application granted granted Critical
Publication of TWI326502B publication Critical patent/TWI326502B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A method for forming fine patterns of a semiconductor device includes forming hard mask patterns over an underlying layer. A first organic film is formed over the hard mask patterns. A second organic film is formed over the first organic film. The second organic film is planarized until the first organic film is exposed. An etch-back process is performed on the first organic film until the underlying layer is exposed. The first organic film and the second organic film are etched to form organic mask patterns including the first organic film and the second organic film. Each organic mask pattern is formed between adjacent hard mask patterns. The underlying layer is etched using the hard mask patterns and the organic mask patterns as an etching mask to form an underlying layer pattern.
TW096100765A 2006-05-09 2007-01-09 Method for forming fine pattern of semiconductor device TWI326502B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060041513 2006-05-09
KR1020060131000A KR100835486B1 (en) 2006-05-09 2006-12-20 Method for forming fine patterns of semiconductor devices

Publications (2)

Publication Number Publication Date
TW200743238A true TW200743238A (en) 2007-11-16
TWI326502B TWI326502B (en) 2010-06-21

Family

ID=38898867

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100765A TWI326502B (en) 2006-05-09 2007-01-09 Method for forming fine pattern of semiconductor device

Country Status (3)

Country Link
KR (1) KR100835486B1 (en)
CN (1) CN100517562C (en)
TW (1) TWI326502B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024712B1 (en) * 2007-12-20 2011-03-24 주식회사 하이닉스반도체 Method for forming semiconductor device
KR100933854B1 (en) * 2008-01-14 2009-12-24 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
KR100976651B1 (en) * 2008-01-14 2010-08-18 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
KR100939168B1 (en) 2008-02-28 2010-01-28 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
KR100955681B1 (en) 2008-04-14 2010-05-06 주식회사 하이닉스반도체 Manufacturing method of photomask using self-assembled molecules
CN101789363B (en) * 2010-03-22 2011-10-26 北京大学 Method for preparing superfine line based on oxidization and chemically mechanical polishing process
CN102903627A (en) * 2011-07-29 2013-01-30 深圳光启高等理工研究院 Masking method for deep etching based on buffer layer
KR101556276B1 (en) * 2012-12-28 2015-09-30 제일모직 주식회사 Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition
KR102824282B1 (en) * 2020-01-09 2025-06-24 삼성전자주식회사 Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same
CN114823295A (en) * 2021-01-27 2022-07-29 中国科学院微电子研究所 Method for manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230351B1 (en) 1991-09-18 1999-11-15 윤종용 Pattern forming method
KR970007173B1 (en) * 1994-07-14 1997-05-03 현대전자산업 주식회사 Fine pattern formation method
KR100307631B1 (en) * 1999-06-01 2001-09-29 윤종용 Method for forming fine patterns of semiconductor device

Also Published As

Publication number Publication date
KR100835486B1 (en) 2008-06-04
CN100517562C (en) 2009-07-22
TWI326502B (en) 2010-06-21
CN101071754A (en) 2007-11-14
KR20070109787A (en) 2007-11-15

Similar Documents

Publication Publication Date Title
TW200834245A (en) Method for manufacturing semiconductor device with four-layered laminate
TW200733225A (en) Method for forming fine pattern of semiconductor device
WO2010002683A3 (en) Method for fabricating high density pillar structures by double patterning using positive photoresist
TW200802536A (en) Method of manufacturing semiconductor device
TW200705564A (en) Method for manufacturing a narrow structure on an integrated circuit
TW200723440A (en) Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same
WO2008059440A3 (en) Double patterning for lithography to increase feature spatial density
TW200717710A (en) Method of manufacturing semiconductor device
TW200643609A (en) Pitch reduced patterns relative to photolithography features
WO2009140094A3 (en) Method for critical dimension shrink using conformal pecvd films
TW200735188A (en) Method for forming storage node contact plug in semiconductor device
WO2011059961A3 (en) Semiconductor device fabrication using a multiple exposure and block mask approach to reduce design rule violations
JP2012138570A5 (en)
TW200710992A (en) Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
TW200632544A (en) Apparatus for forming fine pattern on substrate
WO2009054413A1 (en) Semiconductor device manufacturing method
TW200644099A (en) Method of segmenting a wafer
TW200701396A (en) Method for forming contact hole in semiconductor device
TWI268545B (en) Method of forming semiconductor structures
TW200802621A (en) Method of fabricating recess gate in semiconductor device
TW200741889A (en) Method of fabricating recess channel in semiconductor device
TW200743138A (en) Method of forming a fine pattern
TW200802539A (en) Method for fabricating a fine pattern in a semiconductor device
TW200607044A (en) Method of segmenting a wafer
TW200739172A (en) Manufacturing method for a bottom substrate of a liquid crystal display device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees