TW200745268A - Method for producing polymer, polymer, composition for forming polymer film, method for forming polymer film, and polymer film - Google Patents

Method for producing polymer, polymer, composition for forming polymer film, method for forming polymer film, and polymer film

Info

Publication number
TW200745268A
TW200745268A TW096110990A TW96110990A TW200745268A TW 200745268 A TW200745268 A TW 200745268A TW 096110990 A TW096110990 A TW 096110990A TW 96110990 A TW96110990 A TW 96110990A TW 200745268 A TW200745268 A TW 200745268A
Authority
TW
Taiwan
Prior art keywords
group
polymer
polymer film
forming
composition
Prior art date
Application number
TW096110990A
Other languages
Chinese (zh)
Inventor
Hisashi Nakagawa
Youhei Nobe
Seitarou Hattori
Masahiro Akiyama
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200745268A publication Critical patent/TW200745268A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Disclosed is a composition for forming a polymer film, which contains a polymer obtained by co-condensing (A) at least one hydrolyzable group-containing silane compound selected from the group consisting of compounds represented by the general formulae (1) and (2) below, and (B) at least one cyclic silane monomer selected from the group consisting of compounds represented by the general formula (3) below, and an organic solvent. [Chemical formula 1] (3) (In the formula, R4-R7 may be the same as or different from one another and respectively represent a hydrogen atom, a halogen atom, a hydroxyl group, an alkoxyl group, an acyloxy group, a sulfone group, a methanesulfone group, a trifluoromethanesulfone group or a monovalent hydrocarbon group; m represents an integer of 1-6; and n represents an integer of 1-10.)
TW096110990A 2006-03-29 2007-03-29 Method for producing polymer, polymer, composition for forming polymer film, method for forming polymer film, and polymer film TW200745268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006089987 2006-03-29

Publications (1)

Publication Number Publication Date
TW200745268A true TW200745268A (en) 2007-12-16

Family

ID=38609330

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110990A TW200745268A (en) 2006-03-29 2007-03-29 Method for producing polymer, polymer, composition for forming polymer film, method for forming polymer film, and polymer film

Country Status (3)

Country Link
JP (1) JP5218765B2 (en)
TW (1) TW200745268A (en)
WO (1) WO2007119554A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109689928A (en) * 2016-07-27 2019-04-26 弗萨姆材料美国有限责任公司 Compositions for carbon-doped silicon-containing films and methods of using the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009123032A1 (en) * 2008-04-02 2011-07-28 Jsr株式会社 Composition containing silicon-containing polymer and cured product thereof
JP4911143B2 (en) * 2008-08-15 2012-04-04 信越化学工業株式会社 High temperature resistant adhesive composition, substrate bonding method, and three-dimensional semiconductor device
EP3254303B1 (en) * 2015-02-06 2018-12-05 Versum Materials US, LLC Method for formation of carbon doped silicon containing films
WO2017213667A1 (en) * 2016-06-10 2017-12-14 Exxonmobil Research And Engineering Company Organosilica materials, methods of making, and uses thereof
US11140797B1 (en) 2020-07-31 2021-10-05 Tamara Phipps Apparatus for enhancing cooling of an electronic computing device and method of use

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5110243B2 (en) * 2004-01-16 2012-12-26 Ｊｓｒ株式会社 Method for producing polymer
JP4530130B2 (en) * 2004-01-16 2010-08-25 Ｊｓｒ株式会社 Method for forming polymer film
JP5110239B2 (en) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 Method for forming organic silica film, composition for film formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109689928A (en) * 2016-07-27 2019-04-26 弗萨姆材料美国有限责任公司 Compositions for carbon-doped silicon-containing films and methods of using the same
TWI720741B (en) * 2016-07-27 2021-03-01 美商慧盛材料美國責任有限公司 Silicon precursor compound and method for forming carbon doped silicon oxide film, use of and container housing the compound
US11152206B2 (en) 2016-07-27 2021-10-19 Versum Materials Us, Llc Compositions and methods using same for carbon doped silicon containing films
US11742200B2 (en) 2016-07-27 2023-08-29 Versum Materials Us, Llc Composition and methods using same for carbon doped silicon containing films
CN109689928B (en) * 2016-07-27 2025-05-06 弗萨姆材料美国有限责任公司 Compositions for carbon doping silicon-containing films and methods of using the same

Also Published As

Publication number Publication date
JP5218765B2 (en) 2013-06-26
JPWO2007119554A1 (en) 2009-08-27
WO2007119554A1 (en) 2007-10-25

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