TW200746151A - Methods and device for improved program-verify operations in non-volatile memories - Google Patents

Methods and device for improved program-verify operations in non-volatile memories

Info

Publication number
TW200746151A
TW200746151A TW095150107A TW95150107A TW200746151A TW 200746151 A TW200746151 A TW 200746151A TW 095150107 A TW095150107 A TW 095150107A TW 95150107 A TW95150107 A TW 95150107A TW 200746151 A TW200746151 A TW 200746151A
Authority
TW
Taiwan
Prior art keywords
verify
threshold level
sub
relative
programming
Prior art date
Application number
TW095150107A
Other languages
Chinese (zh)
Other versions
TWI328231B (en
Inventor
Siu-Lung Chan
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/323,577 external-priority patent/US7310255B2/en
Priority claimed from US11/323,596 external-priority patent/US7224614B1/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200746151A publication Critical patent/TW200746151A/en
Application granted granted Critical
Publication of TWI328231B publication Critical patent/TWI328231B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Read Only Memory (AREA)

Abstract

In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Preferably, in a program verify operation relative to a demarcation threshold level for demarcating between two memory states, the verify operation includes a sequence of two verify sub-cycles, the first sub-cycle performing a verify relative to a first threshold level at a predetermined margin below the demarcation threshold level and the second sub-cycle performing a verify relative to a second threshold level which is identical to the demarcation threshold level. Unlike conventional cases, the second sub-cycle is not performed until any one memory cell of the group has been verified to pass the first threshold.
TW095150107A 2005-12-29 2006-12-29 Methods and device for improved program-verify operations in non-volatile memories TWI328231B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/323,577 US7310255B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with improved program-verify operations
US11/323,596 US7224614B1 (en) 2005-12-29 2005-12-29 Methods for improved program-verify operations in non-volatile memories

Publications (2)

Publication Number Publication Date
TW200746151A true TW200746151A (en) 2007-12-16
TWI328231B TWI328231B (en) 2010-08-01

Family

ID=38110643

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095150107A TWI328231B (en) 2005-12-29 2006-12-29 Methods and device for improved program-verify operations in non-volatile memories

Country Status (5)

Country Link
EP (1) EP1966802A2 (en)
JP (1) JP4638544B2 (en)
KR (1) KR101317625B1 (en)
TW (1) TWI328231B (en)
WO (1) WO2007076512A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455134B (en) * 2009-03-23 2014-10-01 Toshiba Kk Nonvolatile semiconductor memory device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
ITRM20080114A1 (en) * 2008-02-29 2009-09-01 Micron Technology Inc COMPENSATION OF CHARGE LOSS DURING THE PROGRAMMING OF A MEMORY DEVICE.
JP5172555B2 (en) 2008-09-08 2013-03-27 株式会社東芝 Semiconductor memory device
JP5193830B2 (en) 2008-12-03 2013-05-08 株式会社東芝 Nonvolatile semiconductor memory
KR101005117B1 (en) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 How Nonvolatile Memory Devices Work
KR101554727B1 (en) 2009-07-13 2015-09-23 삼성전자주식회사 Nonvolatile memory device and its programming method
US8223556B2 (en) 2009-11-25 2012-07-17 Sandisk Technologies Inc. Programming non-volatile memory with a reduced number of verify operations
KR101633018B1 (en) * 2009-12-28 2016-06-24 삼성전자주식회사 Flash memory device and program method thereof
KR101656384B1 (en) * 2010-06-10 2016-09-12 삼성전자주식회사 Method of writing data in a non-volatile memory device
JP2011258289A (en) * 2010-06-10 2011-12-22 Toshiba Corp Method for detecting threshold value of memory cell
JP5380506B2 (en) 2011-09-22 2014-01-08 株式会社東芝 Nonvolatile semiconductor memory device
JP2014053060A (en) 2012-09-07 2014-03-20 Toshiba Corp Semiconductor storage device and control method of the same
JP2014063551A (en) 2012-09-21 2014-04-10 Toshiba Corp Semiconductor memory device
TWI514394B (en) * 2013-08-27 2015-12-21 Toshiba Kk Semiconductor memory device and its control method
EP3891745B1 (en) 2019-10-12 2023-09-06 Yangtze Memory Technologies Co., Ltd. Method of programming memory device and related memory device
KR102813444B1 (en) * 2020-07-10 2025-05-27 삼성전자주식회사 Memory device improving write operation speed and Operating method thereof
US11594293B2 (en) 2020-07-10 2023-02-28 Samsung Electronics Co., Ltd. Memory device with conditional skip of verify operation during write and operating method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679544B2 (en) * 1997-03-28 2005-08-03 三洋電機株式会社 Nonvolatile semiconductor memory device
JP3977799B2 (en) * 2003-12-09 2007-09-19 株式会社東芝 Nonvolatile semiconductor memory device
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7068539B2 (en) 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7170793B2 (en) * 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
ITRM20050310A1 (en) * 2005-06-15 2006-12-16 Micron Technology Inc SLOW CONVERGENCE IN SELECTIVE PROGRAMMING IN A FLASH MEMORY DEVICE.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455134B (en) * 2009-03-23 2014-10-01 Toshiba Kk Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JP4638544B2 (en) 2011-02-23
KR101317625B1 (en) 2013-10-10
WO2007076512A2 (en) 2007-07-05
TWI328231B (en) 2010-08-01
EP1966802A2 (en) 2008-09-10
KR20080096645A (en) 2008-10-31
JP2009522707A (en) 2009-06-11
WO2007076512A3 (en) 2007-08-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees