TW200746293A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
TW200746293A
TW200746293A TW096109942A TW96109942A TW200746293A TW 200746293 A TW200746293 A TW 200746293A TW 096109942 A TW096109942 A TW 096109942A TW 96109942 A TW96109942 A TW 96109942A TW 200746293 A TW200746293 A TW 200746293A
Authority
TW
Taiwan
Prior art keywords
gas
silicon layer
etching method
plasma etching
target object
Prior art date
Application number
TW096109942A
Other languages
Chinese (zh)
Other versions
TWI401741B (en
Inventor
Akihiro Kikuchi
Takashi Tsunoda
Yuichiro Sakamoto
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200746293A publication Critical patent/TW200746293A/en
Application granted granted Critical
Publication of TWI401741B publication Critical patent/TWI401741B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.
TW96109942A 2006-03-23 2007-03-22 Plasma etching method TWI401741B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006080464A JP4877747B2 (en) 2006-03-23 2006-03-23 Plasma etching method

Publications (2)

Publication Number Publication Date
TW200746293A true TW200746293A (en) 2007-12-16
TWI401741B TWI401741B (en) 2013-07-11

Family

ID=38632365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96109942A TWI401741B (en) 2006-03-23 2007-03-22 Plasma etching method

Country Status (3)

Country Link
JP (1) JP4877747B2 (en)
CN (1) CN100521105C (en)
TW (1) TWI401741B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI494994B (en) * 2008-03-21 2015-08-01 東京威力科創股份有限公司 Plasma processing device
TWI512823B (en) * 2010-06-11 2015-12-11 東京威力科創股份有限公司 Selective etching method for insulating stack of metal interconnects
TWI585848B (en) * 2012-07-10 2017-06-01 東京威力科創股份有限公司 A plasma processing method and a plasma processing apparatus
TWI869908B (en) * 2022-07-25 2025-01-11 日商日立全球先端科技股份有限公司 Plasma treatment method

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Publication number Priority date Publication date Assignee Title
JP5102653B2 (en) * 2008-02-29 2012-12-19 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus and computer storage medium
JP5064319B2 (en) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 Plasma etching method, control program, and computer storage medium
JP5457021B2 (en) * 2008-12-22 2014-04-02 東京エレクトロン株式会社 Mixed gas supply method and mixed gas supply device
US8741778B2 (en) * 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
KR20130139738A (en) * 2011-01-17 2013-12-23 스미토모덴키고교가부시키가이샤 Method for manufacturing silicon carbide semiconductor device
JP5719648B2 (en) * 2011-03-14 2015-05-20 東京エレクトロン株式会社 Etching method and etching apparatus
CN103489757A (en) * 2013-10-16 2014-01-01 信利半导体有限公司 A kind of etching method for laminated insulating film
JP6315809B2 (en) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 Etching method
JP6494424B2 (en) * 2015-05-29 2019-04-03 東京エレクトロン株式会社 Etching method
JP6541439B2 (en) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 Etching method
CN105206525A (en) * 2015-09-28 2015-12-30 上海华力微电子有限公司 Method for overcoming defects of grid vertex corner in germanium-silicon growing process
JP6670672B2 (en) * 2016-05-10 2020-03-25 東京エレクトロン株式会社 Etching method
JP6929148B2 (en) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 Etching method and etching equipment
JP6817168B2 (en) * 2017-08-25 2021-01-20 東京エレクトロン株式会社 How to process the object to be processed
JP7061941B2 (en) * 2018-08-06 2022-05-02 東京エレクトロン株式会社 Etching method and manufacturing method of semiconductor device
GB201917734D0 (en) * 2019-12-04 2020-01-15 Spts Technologies Ltd Method, substrate and apparatus
JP7426840B2 (en) * 2020-01-28 2024-02-02 東京エレクトロン株式会社 Etching method and plasma processing equipment
US11688609B2 (en) * 2020-05-29 2023-06-27 Tokyo Electron Limited Etching method and plasma processing apparatus
JP7478059B2 (en) * 2020-08-05 2024-05-02 株式会社アルバック Silicon dry etching method
JP7535408B2 (en) 2020-08-12 2024-08-16 東京エレクトロン株式会社 Etching method and plasma processing system
CN112687537B (en) 2020-12-17 2024-05-17 北京北方华创微电子装备有限公司 Metal hard mask etching method

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JPS62154627A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Dry etching method
JP2758754B2 (en) * 1991-12-05 1998-05-28 シャープ株式会社 Plasma etching method
JPH05217954A (en) * 1992-02-05 1993-08-27 Sharp Corp Detection method of dryetching end point
JP3665701B2 (en) * 1998-01-23 2005-06-29 株式会社東芝 Manufacturing method of semiconductor device
US6218309B1 (en) * 1999-06-30 2001-04-17 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
JP2001274141A (en) * 2000-03-27 2001-10-05 Sony Corp Method for manufacturing semiconductor device
JP2001358061A (en) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp Method for manufacturing semiconductor device
JP3946724B2 (en) * 2004-01-29 2007-07-18 シャープ株式会社 Manufacturing method of semiconductor device
US20060032833A1 (en) * 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI494994B (en) * 2008-03-21 2015-08-01 東京威力科創股份有限公司 Plasma processing device
TWI512823B (en) * 2010-06-11 2015-12-11 東京威力科創股份有限公司 Selective etching method for insulating stack of metal interconnects
TWI585848B (en) * 2012-07-10 2017-06-01 東京威力科創股份有限公司 A plasma processing method and a plasma processing apparatus
TWI869908B (en) * 2022-07-25 2025-01-11 日商日立全球先端科技股份有限公司 Plasma treatment method

Also Published As

Publication number Publication date
CN100521105C (en) 2009-07-29
CN101043004A (en) 2007-09-26
JP2007258426A (en) 2007-10-04
TWI401741B (en) 2013-07-11
JP4877747B2 (en) 2012-02-15

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees