TW200811992A - High temperature anodic bonding apparatus - Google Patents

Abstract

An anodic bonding apparatus includes: a first bonding plate mechanism operable to engage a first material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a second bonding plate mechanism operable to engage a second material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a pressure mechanism operatively coupled to the first and second bonding plate mechanisms and operable to urge the first and second bonding plate mechanisms toward one another to achieve controlled pressure of the first and second material sheets against one another along respective surfaces thereof; a control unit operable to produce control signals to the first and second bonding plate mechanisms and the pressure mechanism to provide heating, voltage, and pressure profiles sufficient to achieve anodic bonding between the first and second material sheets.

Description

200811992 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an apparatus for fabricating a semiconductor-on-insulator (SOI) structure using an anodic bonding technique. [Previous technique #f] Up to now, the semiconductor material most commonly used for semiconductors on insulators is Shi Xi, and is referred to as lfsor for the structure.矽 On-insulator structure technology has become more important for high-performance thin film transistors, solar cells, and, for example, active array displays. For ease of representation, the following description is sometimes expressed in terms of an SOI structure, but the reference to this particular type of SOI structure is primarily to make the description of the invention easier and is not intended to be construed as limiting the invention in any way. The s〇I abbreviations used herein generally refer to a semiconductor-on-insulator structure, but are not limited to germanium-on-insulator structures. Similarly, the use of S0G abbreviations generally indicates the structure of a non-limiting semiconductor on glass. The S0G name is also expected to include the structure of the semiconductor in the glazed ceramics, which includes the unrestricted stone structure on the glass ceramic. The S0I abbreviated contains the S0Q structure. The SOI structure may comprise a thin layer of single crystal stone (usually having a thickness of 〇·〇·3 μm) on the insulating material. The various ways of obtaining the SOI structure wafer include: (1) bonding the wafer wafer to another germanium wafer, the si02 oxide layer growing on the germanium wafer; and (11) ion implantation method to form the buried oxide layer on the stone In the wafer, the (111) ion implantation method separates (epitaxially) a thin layer of germanium from the donor wafer and bonds it to another wafer. Wu Guo No. 5,374,564 discloses a use of a heat treatment process on page 5 of 200811992 4 to obtain a single fine on a substrate. The semiconductor wafer with flatness is subjected to the following steps: (1) A layer of gaseous microbubbles is generated by ion bombardment to define the lower part of the main part of the substrate and the migration of the ship on the film; (ii) The third stage of the assembly of at least one layer of hard material; and (iii) the heat treatment of the crystal, the sheet, and the assembly of the reinforced material, which is at a higher temperature than the 'sub-bombardment The temperature is carried out and is sufficient to create a pressure effect in the microbubbles and to create a separation between the film and the main portion of the substrate. Obviously, this process usually does not work on glass or glass ceramics because of the higher temperatures required to bond glass and glass ceramics. U.S. Patent Application Serial No. 2004/0229444, the disclosure of which is incorporated herein by reference in its entirety in its entirety in its entirety in its entirety in its entirety in its entirety in The processing step comprises: (i) exposing the surface of the Shixi application wafer to hydrogen ion implantation to produce an outer layer having an adhesive surface; (ii) contacting the bonding surface of the Shixi application wafer with the glass substrate; Applying pressure, temperature and voltage to the substrate and the substrate to make it thin; and (iv) cooling the structure to a normal temperature to separate the glass substrate and the germanium epitaxial layer from the donor wafer easily. The SOG structure produced by the process disclosed in U.S. Patent Application Publication No. 2004/0229444 may comprise, for example, a glass substrate, and a semiconductor layer adhered thereto. The specific material of the semiconductor layer is substantially a single crystal material. By "substantially" is meant that the semiconductor layer considers that the semiconductor material normally contains at least some internal or surface defects on the intrinsic or deliberate force, such as lattice defects or some grain boundaries. The so-called "substantially" also reflects the specific The dopant will twist or affect the crystal structure of the semiconductor material. For the purpose of illustration, it is assumed that the semiconductor layer is composed of Shi Xi. However, it is understood that the semiconductor material can be a main material or any conductor, such as ΠΙ_ν, „_ιν, Π_ΙΜ, etc. These materials contain: Si, SiGe, SiC, Ge, GMs, GaP, and ΙηΡ. Glass substrate, can be moth-reviewed and recorded on the glass axis. Miscellaneous: Not required • The S0G structure described here contains oxide glass or glazed ceramics. For example, the glass Newridge Ridge back soil metal porch finds the board No. 1737 or Eagle 2 coffee glass ingredients to make the substrate. These glass materials can be made in the manufacture of liquid crystal displays. We have found that thin epitaxial semiconductor layers (such as Shi Xi) and certain substrates such as some glass and glazed ceramics require good control of the variability of some processes. These Weis contain one or more of the following factors: temperature (especially near and/or above 1 〇〇叱 high temperature); pressure (between the semiconductor layer and the New Zealand); voltage (to produce electrolysis); atmospheric conditions (such as vacuum or non- Vacuum); cooling distribution (progressing); mechanical separation aid (eg, auxiliary extension). The conventional technique of bonding the anode of the body layer of the glass or the ceramic substrate of the glass cannot properly solve the above-mentioned history of the treated spears. For example, the temperature limit of conventional anodic bonding processes is limited to °C. Thus, there is a need in the industry for novel devices that can improve the anodic bonding process by controlling one or more of the process variables described above. SUMMARY OF THE INVENTION According to one or more embodiments of the present invention, an anodic bonding apparatus includes: No. 200811992, a bonding plate member operable to connect only a first material sheet, and providing at least one controlled heating, Voltage, and cooling; the second bonding plate member is operable to engage the second material sheet and provide at least one controlled heating, voltage, and cooling; the pressure member is operable to ground to the first and the first a second bonding plate member and a pressure operable to urge the first and second bonding plate members toward each other to achieve a first and second material sheet abutting each other along their respective surfaces; the control unit Operating to generate control signals to the first and second bonding plate members and the pressure member to provide heating, voltage and pressure distribution sufficient to achieve anodic bonding between the first and second material sheets. In accordance with one or more embodiments of the present invention, an anodic bonding apparatus includes: a first bonding plate member operable to interface with a first material sheet, and providing at least one controlled heating, voltage, and cooling; The second plate member is operable to engage the second material sheet and provide at least one controlled heating, voltage, and cooling; and the lifting and pressing member is operatively coupled to the first and second a bonding plate member and operative to urge the first and second bonding plate members toward each other to achieve a controlled pressure of the first and second material sheets abutting each other along their respective surfaces to facilitate It achieves anodic bonding. In accordance with one or more other embodiments of the present invention, an anodic bonding apparatus includes: a first bonding plate member operable to engage a first material sheet, and a first plate member operable to engage a second material sheet The first and second bonding plate members each include a bearing surface, each bearing surface defining a bearing plane to respectively engage the first and second material sheets; and the opening and closing member 200811992 is operated to be coupled to the crucible - the bonding plate member and the operable: (1) when the closing direction is to assist the fixing of the upper side bonding plate member phase member, so that the movement of the lower bonding plate member toward the upper side bonding plate member will achieve the first and second correction And the (5) providing a double shift_hole distribution, wherein the first movement separates the second bonding plate member from the first bonding plate member, the directions of which are perpendicular to The respective bearing surfaces, and the second movement, obliquely move the second bonding plate member away from the first bonding plate member such that the bearing surface of the first bucket plate member is inclined to the bearing surface of the first bonding plate member. • According to one or more other embodiments of the present invention, the anodic bonding apparatus comprises: a first bonding plate member operable to interface with the first material sheet, and a reference to 1, to: &gt; Heat, voltage, and cooling; the second bonding plate member is operable to interface with the second material sheet, and to provide at least one controlled heating, voltage, and cooling; and the separator member comprises a plurality of a movable shim assembly, the separator member being coupled to the first bonding plate member and operable to symmetrically move the shim assembly toward the first and second sheets of material and therebetween to avoid The peripheral edges of the second material sheet are in contact with each other. According to one or more other embodiments of the present invention, the bonding plate member (used for bonding the first and second material sheets to the anode) comprises: a base having first and second spaced apart surfaces; a thermal insulator of the second surface support and operable to transfer heat to the base; the heated disc is coupled directly or indirectly to the insulator and is operable to generate heat by electrothermal; and the heat sink directly or indirectly To the heating disc and operable to heat at least the heated disc in 200811992, and to apply a voltage to the first material sheet, wherein applying voltage and heat to the first material sheet is assisted by respective heating and voltage distributions The anodes of the first and second material sheets are bonded. According to one or more other embodiments of the present invention, the bonding plate member (used to positively bond the first and second materials sheets) comprises: a base having first and second spaced apart surfaces The heating disc is directly or indirectly consuming to the base and is operable to generate heat electrically, the heating disc comprising a plurality of heating zones operable to provide edge loss temperature compensation characteristics, wherein the first is applied to the first The heat of the material sheet is based on the heating profile to assist in the anodic bonding of the first and second material sheets. According to one or more other embodiments of the present invention, the bonding plate member (used for the first and second material sheets to be anodically bonded together) comprises: a heating disc having first and second spaced apart surfaces and Operable to generate heat by electrothermal; the heat spreader is directly or indirectly lightly coupled to the second surface of the heated disc and is operative to transfer at least heat from the heated disc and to apply a voltage to the first sheet of material; At least one cooling passage in fresh communication with the first surface of the heating disc and operable to carry a cooling fluid to remove heat from the first sheet of material via the heat sink and the heating disc, wherein the first material is applied to the first material Incorporating the respective heating and voltage distribution of the voltage wires to assist the anodic bonding of the first and second material sheets, and cooling the first-thickness according to the cooling distribution to assist in separating the viscous material from the first material sheet Connected to the second material sheet to extend the layer. According to the present invention, the other practical components of the project or the rural items (used in the first and second materials are connected to Yang Yang), the spider contains the base and the aperture of the first and second separated surfaces of the first and second separated surfaces of 200811992. Passing through; the heating disc is supported by the base and can be mixed with the electric energy to generate heat, and the heating disc includes an aperture through which the radiator is directly or indirectly transferred to the heating disc (4) to hide at least the heating sword is sent out The heat, and the application of the collision to the first material, the heat dissipation_including the aperture through which the preloaded plunger has electrodes extending through the base, heating the disc and the aperture of the heat sink when the electrode is in contact with the heat sink It is operable to be electrically connected to the first sheet of material. The other items, features, advantages and the like of the present invention will become apparent to those skilled in the <RTIgt; [Embodiment] Let TM be the same number as τ denote the same element, and Fig. 1 shows a perspective view of the bonding apparatus 1G according to the present invention or the plurality of embodiments. In this embodiment, the bonding device is a tag handling system capable of being at a temperature higher than a conventional bonding temperature such as higher than 6G (rc and close to and/or beyond the surface of the anodic bonding s〇i structure) Two kinds of material sheets. (Adhesive bonding is also sufficient for anodic bonding at conventional temperatures.) For illustrative purposes (not limiting), the SOI age will be described as a bonding device. Appropriate operation of the operation (for example, in the manufacture of SOI structures). For illustrative purposes, the special structure of the work piece as the bottom of the month is to bond the semiconductor donor wafer (such as germanium wafer) to the glass (or glass_wei and The enamel layer is epitaxially ejected from the Shi Xi Shi wafer, so that it remains adhered to the broken glass. 2 The connection device H) includes the lower member: the lifting and pressing member opens and closes the member 50, and the separator member 3〇 〇, the upper side of the bonding plate member 4〇〇, the lower side 200811992 ^ anti-component _. These sakis are privately mixed with each other by the bottom branch. Containing one or more sides to control the 扪 - ^ early兀^丝 shows that it is operable to control each of the bonding devices 1 such as by a computer program) And more detailed description below. ― Although the operation of the bonding device 10 and the specific bonding process will be detailed below, a brief description of the operation is now provided. In Fig. i, the adhesive garment 10 is in a closed orientation so that the upper adhesive panel member is closedly located on the lower adhesive panel member 500. As shown in Fig. 2, the upper member panel can be rotated upwardly and away from the lower bonding member 5 to allow the material sheet to be bonded (for example, Wei body crystal (10) and glass substrate). Set 10. Again, for the purpose of remuneration, the Shixi application wafer assumes that the package 3 is bonded to the outer layer of the glass substrate and subsequently separated by the wafer. In the example, the dummy R-shi body wafer contacts the upper side bonding plate member 400, and the glass substrate contacts the lower side bonding plate member 5〇〇 during the bonding process. For example, a glass substrate can be placed on the lower side of the bonding plate member 5 and the Shihwa application wafer can be placed on the glass substrate such that it is in contact with the upper side of the bonding plate member 400 (when the device 10 is closed). (It is understood that this indication may be made without departing from the scope of the various embodiments of the invention). In another embodiment, when the upper side of the bonding plate member is in an open position, the donor wafer can be coupled to the upper bonding member 400 by means of, for example, a clamp, a chuck member, a vacuum, etc. The tab member 4 is operable to provide at least one dual control of heating, voltage, and cooling to the donor wafer while the lower bonding panel is operable to provide at least one controlled heating of the glass substrate, page 12 200811992 Voltage, and cooling. The lifting and pressing member 100 is operatively coupled to the upper and lower side bonding plate members 400, 500 and operable to urge the first and second bonding plate members 400, 500 toward each other along their respective surfaces ( That is, the interface) reaches the pressure at which the wafer is placed against the glass substrate. The control unit is operable to generate control signals to the upper and lower side bonding plate members 4, goo and to lift and compress the member 100 to provide a heating, voltage, and pressure distribution sufficient between the donor wafer and the glass substrate Anode bonding is achieved. The control unit is operable to generate control signals to the upper and lower side of the bonding plate members 4, 500 to actively cool and facilitate the separation of the epitaxial layer from the donor wafer after bonding. As shown in FIG. 2, when the upper side bonding member shed is rotated upward and away from the lower side bonding board member 500, and the tamping body wafer and the glass substrate are interposed therebetween, the upper side bonding board member 4 is operable to rotate downward (by borrowing The upper side and the lower side of the bonding plate member 4〇〇, 5〇〇 are separated by the open and closed stone member 200), and the upper side bonding plate member 400 and the stone are placed on the glass substrate when the Tianshixi application wafer is placed on the glass substrate The wafers are separated. It can be varied if the zebra wafer is coupled to the upper bonding member 4 (for example, by means of the previously mentioned sweetness, chuck, vacuum, etc.) coupled to the upper bonding member ferrule wafer It will be separated from the glass substrate. If the latter method is adopted, the Shi Xi Shi body wafer and the broken glass substrate can be heated to a specific temperature (which is close to and/or f over 1_〇). In the case of the former, the individual heating can be started after the surface is completely woven. As shown in Figs. 4A and 4B, the wafer and the glass substrate can be brought into contact with each other under the lifting and the controlled pressing of the pressing member 100 of 200811992. And the pressing member 100 lifts the lower side bonding plate member 500 (and the glass substrate) to a position, so that the controlled force σ heat and pressure can be achieved between the Shishi body wafer and the glass substrate. The wafer and the glass substrate also apply a 1750 volt DC differential electromotive force to the upper and lower side bonding plate members 4〇〇, 5〇〇. The applied pressure, the differential temperature, and the differential voltage last a controlled time. Then, the voltage is zeroed. And cooling the donor wafer and the glass substrate (including active cooling), which at least initiates the separation of the epitaxial layer from the shi shi body wafer. If the separation between the epitaxial layer and the shixi body wafer is during the cooling process Incompletely, one or more mechanical or other components can be used to assist in the epitaxial process. The various components of the bonding apparatus 10 will now be described in more detail. Figure 5 is an exploded perspective view of the bonding apparatus 10. It is easy to clearly show the specific members··lifting and pressing members 1〇〇, the opening and closing members 2〇〇, the separator member 300, and the upper and lower side bonding member sheds, round. Referring to Fig. 6, The two illustrate the embodiment of lifting and pressing members. The lifting and the sub-members are lightly coupled to the lower side of the bonding plate member and are operable to urge the upper and lower side bonding member sheds, 5〇〇 toward each other along The respective surfaces of the substrate and the glass substrate are brought together to be controlled pressure to assist in achieving anodic bonding. In this embodiment, the lifting and pressing member 100 is operable to cause the lower side to be bonded. The plate member 5 〇〇 produces two main movements: (1) preload movement, wherein the lower side bonding plate member 5 〇〇 vertically moves the glass substrate toward the upper side bonding plate member 4 to achieve the upper side and the bonding plate member iron _(and _ base And the Wei body ^) initial preload position, and (Η) pressure load movement, wherein the glass substrate is pressed against the Μ page 200811992 矽 application wafer is under controlled pressure (which also allows between the glass substrate and the 晶片 wafer) Self-aligning to achieve a uniform pressure distribution.) The lifting and pressing member 100 includes a base 102, a first actuator 104, a second actuator 106, and a lower pallet 108. The base 102 includes an upper side surface 110 and a lower portion Side surface 112. The first actuator 1〇4 can be engaged to the lower side surface 112 of the base 1〇2 while the second actuator 1〇6 is coupled to the upper surface 110 of the base 1〇2. The lower tray 108 It is coupled to the second actuator 1〇6 such that the second actuator 106 is located between the base 1〇2 and the lower pallet 〇8. The base 102 is slidable relative to a plurality of sets of guide posts 114, 116, 118. (Although it shows three guide posts, a larger or smaller number of guide posts can be used). For example, the base 1G2 can include guide bushings 12, 122, 124 (where the bushing 124 is not visible), such that the respective guide posts 118 are coaxially located within the respective guide bushings 120, 122, 124 such that the guide posts 114, 116, 118 can Sliding longitudinally within the guide bushings 12, 122, 124. The respective guide posts 114, 116, 118 can be actuated by the stabilizer 13Q over the bottom plate 12 of the bonding device 1 〇 in accordance with one or more embodiments of the present invention, the actuation of the actuators 104: achieving the prior considerations , the underside of the slab member is wrong, and the bottom plate 108 is moved toward the upper side of the splicing plate member 働 to achieve the upper side and the lower side of the splicing plate member 4〇〇, 5〇〇 (and the glass button and the stone shi body crystal == Positioning of the pre-_. The movement is the rough displacement of the upper side of the connecting plate member 曰 曰 月 向上 向上 向上 。 。 。 。 。 。 。 。 。 。 。 。 。 。 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The actuation of 4 will cause coarse movement of the second actuator (10) and the lower side of the bonding plate member 500 of the 200811992. The upward actuator 1〇4 may comprise a shaft leg which is operable to move m2 The first actuator 1〇4. The shaft legs can be driven by any suitable clothes, such as a motor spiral tube 'hydraulic piston farm, etc. The first and lower objects cause the base 102 to move relative to each other, so the bottom (4) 14116, 118 is guided The axis of the axis is 12〇, 122 is maintained within 2. The bottom of the money 2 moves to cause the second to actuate the crying hall, the bottom, the board 1〇 8, and the lower side of the bonding plate member corresponding to the movement of the first == 104 movement by the axis _ movement can be mechanically, electrically, and / or liquid i to limit 'making the lower side of the plate member 5 (8) f_. 6 (4) 嶋 咖 定 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 124 Producing a force (for example, a slight movement, which she moved roughly as previously mentioned) on the lower side of the bonding plate member 500, wherein the controllable force is substantially perpendicular to the bearing surface of the lower side of the bonding member 5 (ie, the surface in contact with the glass substrate). When the side of the upper side of the bonding plate member is parallel to the bearing surface. When the plate member is closed to the bearing surface, the second actuator, 106 of the lifting and pressing member 1 ensures that no (or minimal) lateral force is applied between the hybrid wafer and the glass substrate, which will be good. Quality anodic bonding produces scratches or damage. The second actuator 106 can be a telescoping actuator operable to post the lower pallet (10) up and down in response to changes in fluid pressure (e.g., liquid or gas pressure) within the expander. The second actuator, 106 can be independently controlled to control the previously mentioned pressure load movement, with the glass substrate pressed against the slab. Careful control of the second actuator 1〇6 (e.g., control of the pressure within the expander) by the control unit can be used to establish the proper pressure between the 11⁄4 pole bonded glass substrate and the cut wafer. In addition, the use of a retractor in the second actuator 106 allows the bottom tray 1〇8, the lower side bonding plate member 5〇〇, and the glass substrate to float or self-align with the upper side bonding plate member 400 (and stone) Xi Shi body wafer). The lifting and pressing member 100 can also include a plurality of mounting members such as an upward guiding post 140 coupled to the lower tray 108. The mounting member U0 is operable to splicing and securing the divider member 3A and will be described in more detail below. As shown in Figure 5, the lifting and pressing member 1 can also include a positioning sensor 150 coupled to the lower pallet (10) and/or the lower bonding panel member 5A. The position sensor 150 is operable to provide an output signal to the control member that indicates the extent to which the lower side plate member 500 is moved. For example, the output signal of the position sensor 15 can provide a display of whether a rough displacement of the previously mentioned lower side of the plate member 5 (toward the upper side of the plate member 400) occurs. This will provide a display of when to start heating, preload pressure, and application of seed voltage. The output signal sensed at 150 can additionally or alternatively provide a display of the speed and/or acceleration of the lower side of the plate member 500. Those skilled in the art will appreciate that the position, velocity, acceleration, etc. of the lower side of the bonding plate member 500 can be calculated by the control unit based on the output signal of the positioning sensor 150 and one or more position measurements based on time. For example, the position sensor can be implemented using a linear voltage differential knife-turn, cross-state (LVDT) that provides a variable amplitude output signal as a function of the transition center of the 200811992. Embodiments of the opening and closing members will now be described with respect to FIG. In this embodiment, the opening and closing member 2A includes a lifting member 2〇2, an actuator member 204, a tilting assembly 2〇6, and a pallet 2〇8. The opening and closing member is coupled to the upper side bonding plate member 4 (not shown in Fig. 7, see Figs. j and 5) and is operable (1) when the closing direction is directed, the auxiliary holding the upper side bonding plate member The shed position is opposite to the lower side bonding plate member 5〇〇, so that the movement of the lower side bonding plate member _ toward the upper side bonding plate member 4〇〇 reaches the glass base, and the controlled pressure is on the glass base. And (6) providing a double shift_hole distribution, wherein the first movement separates the upper side bonding plate member 4 (9) from the lower side bonding plate member 5 (9), the direction thereof is substantially perpendicular to its respective bearing surface, and the second movement makes the upper side sticky The slab member shed is inclined away from the lower side splicing plate member so that the bearing surface of the _ gusset member 4 倾斜 is inclined to the bearing surface of the lower viscous plate member 5 。. With regard to the double moving aperture distribution, the lifting assembly 2〇2, the actuator 'component assembly, the tilting assembly 2〇6, and the pallet combination work together to achieve two main movements: (1) the pallet 208 relative to the bottom plate! The vertical movement; and the (earth soil) tilting movement causes the pallet 208 to rotate upward relative to the bottom plate 12. Note that the upper side bonding plate member 400 is operatively coupled to the pallet 2〇8, and the rotation of the pallet 2〇8 allows the yoke body wafer and the glass to be reversely inserted to the upper side and the lower side bonding board member side, 500 The bonding device 1 is inside. The vertical movement of the pallet 2〇8 (and the upper side of the bonding plate structure) allows the initial separation movement between the upper side and the lower side bonding plate member iron 5, which is purely recorded. It can be separated without Scratch laterally, otherwise it will damage the structure of s〇G. These characteristics will be described in detail below on page 18. 2008. 1992 The lifting assembly 202 includes a base 210, a guide shaft 212, and a guide bushing 214. The base 210 is operable to connect directly or indirectly to the base plate 12 and to provide precise phase contrast, the spider is tilted and tilted. The guide shaft 212 is operatively coupled to the base 21 and extends vertically toward the tilt assembly 206 and the support Plate 208. Guide bushing 214 is operative to slidably engage guide shaft 212. As explained in more detail below, the sliding movement of guide bushing 214 relative to guide shaft 212 causes rotation and verticality of pallet 208 The guide bushing 214 includes a retaining plate 216 that is operative to be mechanically coupled to the actuator assembly 204. The mouth, actuating assembly 204 is operable to provide a vertical force to the retaining plate of the guide bushing 214 216, enabling the guide bushing 214 to be controlled The slippage again achieves the lifting and tilting movement of the pallet 208. In one embodiment, the actuator assembly 204 can include a jack 230, such as a Duff-Norton jack, the shaft 232 is coupled to the jack 230, and the coupling element 234 is coupled to the retaining plate 216 of the guide bushing 214. In one or more embodiments, such as a stern, the row (five) jack 230 is operable such that a rotational force applied to the shaft 236 causes the shaft 232 to move vertically and guide the bushing The final vertical movement of the 214. The actuation of the jack 230 can be controlled by a control unit, such as an electric motor to rotate the shaft 236. The pallet 208 can include a first end 240 that is operable to simply attach the upper side of the bonding plate member 400, and the second end 242 is operatively coupled to the tilt assembly 206. In this embodiment, the tilt assembly 2〇6 includes a hinge plate 25〇 that couples the pallet 208 to the lift assembly 202 (which will be underneath) In more detail, the tilting assembly 206 also includes first and second stop arms 252, 254 and hinge plates 25 that are coupled to the pallet 208. The stop arms 252, 254 are at the first end. Coupled to the backplane 12, and The second end is coupled to the pallet 2〇 8. The stop arms 252, 254 can be rotatably coupled to the bottom plate 12 at the first end, thereby avoiding vertical movement (relative to the bottom plate 12), but the second end The first end can be pivotally moved. The female one of the stop arms 252, 254 includes a slit 256 that is operable to withstand the opposite roller or column from the second end of the pallet 2〇8 laterally The pallet 208 is operatively coupled to the hinge plate 250 by a pivot link 258. More particularly, the hinge plate 250 includes a slider 260 that extends at least partially into the aperture 245 of the pallet 208. Pivot link 258 allows pallet 208 to rotate or rotate about pivot link 258. The aperture 245 is sized and shaped to rotate the slider within aperture 245 without interference. The shaft 232 can lift the /p low guide bushing 214 by actuating the reaction of the jack 230 (e.g., by applying a rotational force to the shaft 236). In the displayed orientation, the guide bushing 214 is raised in response to the previously mentioned actuation, thereby causing the hinge plate 250 to move vertically (upward). The hinge plates 25 施加 apply vertical force to the pallet 208 by the slider 26 〇 and the yaw link 258. The pallet 208 is moved by the slider 260 in such a manner that the upper side and the lower side of the upper plate member 4 are fully constrained during the lifting movement. The faces remain parallel. The vertical force exerted by the drum plate 250 on the pallet 208 causes the pins 244 or rollers of the plates 2 to 8 to move upwardly within the respective slits of the respective stop arms 252, 254. The pallet 208 will thus rise vertically away from the bottom plate 12 while maintaining a parallel relationship on the solid. Moving up (or lifting) vertically while maintaining the essence of the operation parallel to the opposite base plate 12 on 200811992 will continue until the roller or the tip 244 of the pallet engages the upper limit in the slit 256. When the roller or ferrule 244 reaches the limit, the force exerted by the slider 260 on the pallet 208 continues upwardly, causing the first end 240 of the pallet 208 to tilt upwardly in response to the rotation about the pivot link 258. mobile. (Slight pivotal movement of the stop arms 252, 254 about their first end may indicate lateral movement of the pallet 2〇8 that pivots about the pivot link 258). The angle of inclination of the pallet 208 can be adjusted by the stops 257 located at the respective stop arms 252, 254 &amp; For example, stop 257 can include a threaded rod and a nut, wherein the threaded rod can be rotated into and out of the associated slit 256 to varying degrees. This adjustment allows the roller or ferrule 244 to permit operation and the tilt angle of the pallet 2〇8 to be varied in the available sipe length. Actuation of the reversal of the assembly 204 causes the pallet 2〇8 to slope downwardly to the direction of the substantially parallel bottom plate 12, and then vertically downward, wherein the pallet 2〇8 remains substantially parallel to the bottom plate 12. The parallel direction of the pallets 208 can be adjusted by the hinge plates 25 或 or the night stops 259. For example, the stop block 259 can include a threaded bolt that can be threaded into and out of the indentation plate 25 to provide a position in which the plate can be adjusted. The first end 240 of the pallet 208 also preferentially includes a plurality of latches 246 operatively coupled to and coupled to the lift and press members ι (see FIG. 6) guide posts 114, 116, 118 Upper side ends ii4A, 116A, 118A. For example, the lock 246 can be implemented manually using threaded bolts. When the pallet 208 is lowered to the position shown in FIGS. 4A, 4B, the upward pressure exerted by the locker on the wafer and the upper adhesive panel member can be offset by the pallet 208 without It is desirable to expose the lift assembly 2〇2, the actuator assembly 200811992 204 or the tilt assembly 206 components to excessive force. The first end portion 24 of the pallet 208 also includes a plurality of apertures through which individual metal wires, cables, and conduits can pass, as will be described in detail below. Referring to Figures 8A and 8B, a further detailed description is provided with respect to the upper side bonding plate member 4A. Fig. 8A is a perspective view of the upper side bonding plate member 4'', but Fig. 8B is a k/f side view thereof. Due to the symmetry of the bonding device, it is understood that the functional and/or structural details of the upper bonding member 400 are applicable to the lower bonding plate assembly 500 (as explained below). The main components of the upper side bonding plate member lion include a base 4〇2, an insulator 404, a backing plate 406, a heating disc 408, and a heat sink 410. The main function of the upper bonding plate member is to heat the substrate wafer, to supply pressure to the wafer, to supply voltage to the wafer, and to cool the wafer. The heating function originates from the heating disc 408 and is operable to provide a temperature below or above 600 ° C, and can approach or exceed 1 〇〇 (rc. The upper side bonding plate member 400 can also be operated to provide uniform heating The degree is controlled within the range of ±0·5% of the body wafer set point. • The pressure applied by the upper bonding plate member 400 to the wafer is uniformly distributed on the wafer by the heat dissipation state 410, The opposite force is applied to the upward force by the glass substrate (applied by the lower side bonding plate member 5). This causes a pressure distribution at the interface between the donor wafer and the glass substrate to be suitable for anodic bonding. The plate member 500 generates an upward pressure (for example, in the case of control unit control), and the pressure distribution may include at least a peak pressure between psi and 100 psi. A lower pressure between 1 〇 and 5 〇 pSi (for example) Approximately 20 psi) is believed to be beneficial because it is less prone to rupture the glazing substrate or the glass substrate. As explained above, the application wafer and the glass substrate are different from 1750 volts DC. The electromotive force is applied to the upper and lower side bonding plate members 400, 500, respectively. It is understood that the electromotive force can be achieved by: (i) applying an electromotive force to one of the stone substrate and the glass substrate (while another Or grounding) or by (ii) applying a respective electromotive force to the Shihwa body wafer and the glass substrate (for example, a positive electromotive force to the donor wafer and a negative electromotive force to the glass substrate). Thus, the upper side bonding member 400 The ability of the force-applying electromotive force (different from the grounding) to the donor wafer is an additional characteristic. For example, by applying the bonding electromotive force (unlike grounding) to the donor wafer by the upper bonding plate member 400, The heat spreader 410 is evenly distributed over the entire surface of the wafer. Although the invention is not limited by any theory of operation, it is known that there is a general relationship between bond voltage, temperature, time, and material properties. For example, when bonding The voltage is reduced, and/or the number of conductive ions (eg, whether the glass substrate increases to at least the same bonding result. When the temperature, time, and/or number of conductive ions are independent variables, Maintain this relationship. The bonding electromotive force between the cut wafer and the glass substrate is 1 volt dc (or lower) to about 2 volt volts (or greater) and peaks can be used. s, or other measurement practices for measurement. For a particular type of glass substrate, the adhesion voltage is appropriate in the range of 1000 volts DC to 2000 volts DC. If the donor body requires active cooling, its monetary control fluid* The upper side bonding plate member 4 is achieved. These and other characteristics of the upper side bonding plate member will be described in more detail below. The base 4〇2 of the upper splicing plate member side has a cylindrical configuration and defines the internal volume of 200811992 as Withstand the tearing of the insulator. For example, the base 4〇2 can be added: the glazed ceramics are formed as shown in the figure, which provides structural integrity and; Coffee temperature ability. __ Other suitable for 402. The insulator 404 is operable to limit the amount of thermal insulation from the side of the twisted disc to the base 402 (and other portions of the bonding device). The repair and insulator 404 may be formed of a ceramic foam insulating material, for example. Compact and melted Shi Xishi. Other suitable rides may be attached or replaced. The insulator 404 should provide significant insulation capability since the heated disc side is operable to achieve a temperature of _t: high, such as reaching the surface t. It is understood that the lack of enthusiasm will cause a large number of heat-flowing basal muscles to work properly. Other parts of the body will cause catastrophic consequences. In addition, the relatively high degree of insulation between the pedestal and the heated disc 408 ensures a relatively low thermal inertness on the side of the upper side of the bonded sheet member, which contributes to rapid thermal cycling capability. The backing plate 406 is insulated from the base 402 by an insulator 4〇4. The backsheet is operable to provide at least one cooling channel 420, # requiring active reduction of the s〇G structure, particularly when the body wafer temperature is applied to the cooling fluid. For example, the backing plate 406 can be formed from hot pressed nitrite (10) N) to withstand high temperatures and relatively rapid temperature changes (when cooling fluid is added to the passage 42). Other suitable materials may be additionally or alternatively employed to form the backing plate 4〇6. At least one inflow line 422 is operable to flow cooling fluid into the passage 42A while at least one outflow line 424 (not visible in Figure 8B, but visible in Figure ,, and illustrated below) is operable by passage 42 〇 Remove the cooling fluid. A heat exchanger (not shown) may be employed to cool the cooling fluid before reflowing to the influent line. Page 24 200811992 Active cooling can be achieved by using a control unit to control the flow and temperature of the cooling fluid flowing through passage 420. For example, the crotch blade on the side of the upper side of the bonding plate member can be actively controlled (e.g., by a control unit) to provide at least one different cooling rate and a different cooling value for the application. It is believed that providing different cooling profiles for the donor wafer and the glass substrate separately will facilitate easier separation of the epitaxial layer from the donor wafer. Obviously, the active cooling characteristic on the side of the upper side of the bonding plate member is selective, and the glass ray can be passed through the lower side of the bonding plate member 500 due to the differential cooling distribution between the body plate and the glass plate (and without the Shi Xi Shi) The bulk wafer is achieved by active cooling (which will be explained in more detail below). The middle mesh % 426 (see Figure 8B) is operable to hold the insulator 4〇4 within the base 402 and provide an access opening into which the scale #4〇8 can be placed. The cap ring 426 can be machined with a glass ceramic (e.g., previously described (1) phantom formed. The heated disc&gt;{ 408 is operable to generate heat in response to electrical excitation (voltage and current) while also providing an insulating property for application to the stone. The electromotive force of the wafer is not applied to the backing plate 406 or the base 402. Indeed, the relatively high electromotive force applied to the Shihua body wafer should be earned. Therefore, the heating disc can exhibit conductive insulating properties and heat conduction. The material is formed. One suitable material is PBN. As shown in Figures 9A and 9B, two examples of heating flip design are shown, which are suitable for implementing the heated sword side. Figure 9A is the first heating. A perspective view of the disc shed a' while Fig. 9B is a perspective view of another second heated disc surface. Since a relatively uniform heating is required, the disc is heated, and the side may contain thermal edge loss, which allows for heating. The outer portions of the discs 408A, 408B will tend to operate cooler than the central portion. In the illustrated embodiment, the heated discs 4〇8Α, 4〇8β hot edges, and 彖#Bei can be used for two injuries. Heating zone Reached, a centrally located and another -. A central region of the annular heating zone may be used four weeks respective heating element embodiment of FIG. 9A heating discs 408A comprises two separate heating elements and the 4〇9A

409B, Wherein the heating element 4〇9B is substantially centrally located and the heating element 4〇9A is in the form of a ring around the heating element 4〇9B. Each heating element 4〇9a,  409B contains - the end of the power supply 埠 411A, 411b. The voltages and currents of the heating elements 409A and 409B of the heating disc 408A of the respective power sources can be separately controlled by the control unit, respectively. The individual temperatures of the two heating zones are individually adjustable and thermal edge losses are achieved.  The heating elements 409A and 409Β may be formed of pyrolytic graphite (PG) THERMAF〇IL or the like. The THERM0F0IL material is a thin, flexible, heating-characteristic sample. It comprises a metal resistance element superposed between the elastic insulating layers.  Although THERM0F0IL will show better fineness in vacuum, A non-vacuum environment (which contains one or more oxidant shoulders such as an air environment) is also considered here. In a non-genuine environment, The airfoil side and 4_ can be formed by the fox. It contains a series of high-strength austenitic nickel-chromium-iron alloys. It has good corrosion and heat resistance.  In the - or multiple embodiments, The heater element view and the shed B can be vertically offset to compensate for the lion's hot edge loss. E.g, In the central area, the heater component shed is located on the edge of the shed. However, in the ring shape, the heater element face can be located on or toward the heating plate # on page 26, 200811992 side. This reduces the thermal impedance between the heated wafers at the periphery of the heated disc side A, It is attached to the heating disc side / : Compare with the thermal impedance between the Wei body. Can coffee - Lai Mei domain 11 tree, 2. As shown in the m end 4411β, laterally rather than downwardly,  Figure 9: The heated disc shed β contains the integral formation plus: Such as: Heating element with f away from Wei Bird,  The width (and / or thickness) of the heating material can be varied and placed at the position of the force σ hot plate (4). E.g, At the peripheral location, the width of the fitting is lower than the width of the heating element in the central portion.  Changing the width of the heating element will change the resistance of the heating element (and thus the heating characteristics) as a function of position. By changing the resistance of the overall supply as a function of the position of the central region of the heated disc 4〇8Β, Only a single _ voltage and current fine scales are required to pay for the hot side. indeed, The overall heater element will react (heat) differently to the voltage and current. It is caused by changing the resistance in the regions 409C and 409D.  Independent of the heating element structure, The heater element has a resistance of about one ohm (e.g., about 15 ohms). In order to reach the previously mentioned about 6〇〇t:  To 1000 C heating value, Applying approximately 220 volts across the heating element, It will produce approximately 3,250 watts of heat to disappear.  In one or more embodiments, The heated disc 408 exhibits a relatively low heat boom. It is at least partly due to the choice of materials and construction. Using the materials and construction described above, The heating disc measures a thickness of 2 mm. Roughly low Page 27 200811992 Thickness (compared to the thickness of the 2nd leaf of the prior art heating element) produced by the small Berry and hot inertia, It contributes to the ability to achieve rapid thermal cycling.  The heat dissipation 410 is in communication with the heating plate #4〇8 and is operable to integrally form a heating distribution exhibited by the heating disk 408. The wafer applied to the Shih Tzu is more uniform. The heat sink can be thermally and electrically conductive. It is easier to heat the wafer and apply the high voltage mentioned in the wire when it is in direct contact with the wafer.  Among the materials that can be used to implement the heat sink, Conductive graphite is needed, For example, THERMAF0IL. In a non-vacuum atmosphere (such as air),  The heat sink 410 can be fabricated from other materials that exhibit better reproducibility in an oxidizing environment. For example, non-oxidizing electro-thermal conductivity elements, Has a non-oxidizing coating (such as nickel, turn, restrain, | Dan, etc.) Copper, Non-oxidizing coating such as nickel, Indium oxide, Group, etc.) Carbonized stone (with or without a coating film), With a metal coating (such as nickel, platinum, molybdenum, Buttons such as kKEVUR.  In one or more embodiments, The heat sink 41〇 also exhibits a relatively low thermal inertia. It is at least partly due to the choice of materials and construction. Use the above,  The thickness of the heat sink 41〇 of the material and structure is 〇·5-6mm.  The relatively scaly overlay # and the heat sink II 410 exhibit high insulation properties by the insulator 404 and other materials selected in conjunction with the above description, which will result in very low heat and thermal inertness of the upper side panel member.  thus, The upper side of the bonding member 4 is heated to a temperature of 1 ° C in 2 minutes and cooled to room temperature in 1 minute or at a time.  Compared with the previous substrate heating H, It takes half an hour to a few hours to bring the material flakes from room temperature to _t: , as well as; 2G Healthy Cooling Lakes to Room Page 28 200811992 The Temperature 0 control unit can be programmed to allow the upper side of the bonded panel to be heated or rapidly cooled as needed and to stay at any desired processing temperature.  As shown in Figure 8A, The upper side of the bonding plate member shed may contain a pore size gamma, It allows access to the wafer during the bonding process, For example, the original load voltage is applied to the wafer. This additional feature will be further explained in the following description.  Figure 10 shows an exploded view of the upper side of the bonded panel member (not including the base 402 and the insulator 404). As shown in the exploded view, The upper side bonding plate member 4〇〇 is a multi-layer component, It includes a support ring 430, Pad 432, Backplane 406, Pad 434, Heating the disc 408, And the radiator 41〇. Support ring 430 provides support for the backing plate and liner 432. The back plate 4〇6 is sandwiched between the pads 432 and 434. It operates to prevent leakage of cooling fluid as it flows through passage 42. At pad 432, 434 in the formation of raw materials, GRAFOIL ring material is needed, Because it exhibits proper sealing and heat resistance. The heated disc 4〇8 is positioned over the pad 434 and the thermal state 410 is above the heated disc 408. The respective upper bonding members 4 are coupled to each other by bolts.  In one or more embodiments, The backing plate 4〇6 includes two separate channels 420, It is connected by 4各6A, 406B is subjected to cooling fluid, And discharging the cooling fluid 420 by the common outlet 406C. The two cooling channels ensure that the entire heat sink 410 is more uniformly cooled (and thus the body wafer).  obviously, The heat sink 410 includes a plurality of fins 436, It extends radially outward from the peripheral edge of the heat sink 410. Fin 436 provides a peripheral surface, It is used to hold the heat sink 410 in place and to provide connection to a high voltage power source. The fins 43β are connected to the respective holder wafers 440咱p, page 29, 200811992, as shown in Fig. 8B, and the heat sink 410 is prevented from moving. Preferentially, The holder wafer 44 is formed of machined glass ceramic (e.g., MAC0R). It thus provides conductive insulation as well as good structural integrity.  As explained above, The upper side bonding plate member 4 can optionally include a hole diameter 450. It can be accessed by the base 4〇2. Insulator 404, Backboard 4〇6, Heating the disc 408, And the separation aperture of the political thermal state 410 is achieved. The aperture 450 can be located in the center, It is possible to obtain an entrance and exit of the central area of the wafer. The use of the wafer wafer inlet and outlet provided by the aperture 450 will be described in detail below.  Referring now to Figure 11A, 11B, And 11C, It further shows the structure and functional items of the upper side bonding plate member 400. Figure 11B and Figure 1 (: It is a sectional view which is developed along the straight lines 11B-11B and 1KH1C, respectively. As shown in Figure 54, The excitation voltage and current are applied to the heating disc 4〇8 by the end turn 452, It extends through the base 402. Insulator 404, And a backing plate 406. The number of turns depends on how many heating elements are used in the hot plate 408 and how the heated disc is implemented. As explained above, In one or more embodiments, Two heating elements can be used, To control the excitation voltage and current separately by the control unit, The temperature of the two heating zones is precisely regulated. Can be changed, The heating element can be formed integrally (using a variable resistor), A single excitation voltage can be used for temperature adjustment and edge loss compensation.  As shown in FIG. 11B, The respective fluid coupling sheds can be coupled to the inflow tube 422 and the outflow tube 424 to allow a fluid source (not shown) to be coupled to the upper side plate member 400. obviously, The inflow tube 422 and the outflow tube 424 extend a substantial distance from the base 402 to pass through the aperture in the plate 208.  As shown in Figure 11B and lie, A relatively high electromotive force (for example, compared with heaters, page 30, 200811992) can be applied to the heatsink 41 by the high voltage terminal 埠453. The end turns through the base 402, Insulator 404, Backplane 406, And the hot plate 408. As explained above, The voltage applied to the heat detector (between the DC surface and the surface volts) is used to assist the 11-electrode anode to adhere to the glass substrate.  Although not shown, The upper adhesive plate member 4〇〇 may also include one or more vacuum conduits. It touches through the base, Insulator tearing, Back shed, And the heating disc 408 extends to the heat sink 41〇. If a vacuum conduit is used, When it is placed on the sin of the hot state 410, it allows the force to be vacuumed on the Shi Xi Shi body wafer. The wafer is coupled to the heat sink 410 when the upper side of the bonding plate member 4 is rotated downward into position. as shown in picture 2. Applying a vacuum can be achieved using a conventional vacuum source (not issued). It is controlled by the bonding device 1 operator via the control unit or manually. The pre-negative force and the seeding voltage are intended to initiate anodic bonding in a localized region of the interface between the donor wafer and the glass substrate prior to application of the bonding voltage, It will make the anodic bonding of the entire interface area into a portable species. The aa voltage and the bonding voltage can be the same or different. However, lower or equivalent voltages such as DC 75()-face volts are believed to be preferred. The aperture 45〇 can be located in the center. The initial anodic bonding occurs at or near the central region of the interface between the slab and the glass substrate.  Tea test picture 12A, 12B, And 13, Appropriate devices are shown to achieve the previously mentioned pre-negative forces and seeding voltage functions. Figure 12C shows a side view of the preloaded plunger 470, It is operable to connect the upper side of the bonding plate member 400 and extend through its aperture to mechanically and electrically communicate with the lithographic wafer. Figure 12B is a cross-sectional view of the preloading plunger 470 of Figure 12A, Figure 13 is a side cross-sectional view of the side of the side of the pre-loaded plunger coupled to the upper side of the bonding member 4 and the lower side of the panel. The preloaded plunger includes a housing 472, It has a proximal end 474 and a distal end 476. , The conductive scale 478 is located at the outer casing = 4 and provides a member to connect the power source. The preloaded electromotive force is obtained from the power source. The plunger 480 is partially located within the outer casing 472 and extends through the distal end 476 of the outer casing 472. The plunger is slidable within the outer casing 472 in a telescopic manner.  The post 480 includes a stop 482 at one end to prevent the plunger 48 from passing through the distal end and k being incompatible with the outer casing 472. Electrode 484 can be coaxially located within plunger 480, Wherein the electrode end 486 extends beyond the end of the plunger. (as detailed below, The end 486 engages the body wafer. The first pressure spring 488 mechanically and electrically couples the electrode 484 and the end turn 478, The plunger 480 is allowed to slide so as not to disturb the conductive connection between the end 478 and the electrode 484. The first pressure spring 488 also urges or biases the electrode 484 (and the plunger 480) forward. The block 482 is rugged to the outer casing 472.  The first tamper yellow 490 also urges the plunger 480 forward. The stop block 482 is engaged with the outer 472 and biased toward the plunger paste and the electrode. The axial force on the electrode 484 and the plunger 480 is absorbed by the respective pressure ring iron shed. The electrode tip 486 is biased and remains electrically conductively coupled to the donor wafer. Electrode 484 thus delivers the seed crystal voltage to the Shihwa wafer. In one or more of the examples, Electrode 484 can slide within plunger 480, The plunger 480 itself is also biased and applied (either alone or in combination with the electrode 484) to preload the pressure on the wafer.  In a preferred embodiment, The electrode end 486 extends below the upper side bonding plate member 400, When the lifting and pressing member roughly displaces the lower side bonding plate member 500 toward the upper side bonding plate member shed, The electrode contacts the Shi Xi Shi body page 32 200811992 wafer (ie, Before the bonding device 10 is completely closed, As shown in Figures 4A-4B). Therefore, Can apply full pressure, Before temperature and voltage, The pre-load pressure and the seeding voltage are applied to initiate the anode bonding of the wafer and the glass substrate.  Similar to applying a bonding voltage to the Shi Xi Shi wafer and the glass substrate, The seed electromotive force can be obtained by: (i) applying an electromotive force to one of the shixi body wafer and the glass substrate (while the other is grounded); Or, by applying (i i), each of the electromotive force is applied to both the donor wafer and the glass substrate. thus, Initial bonding is required in the local interface region between the donor wafer and the glass substrate, The ability of the upper side bonding plate member 400 to apply a seed voltage to the wafer is an additional characteristic. As in the description, The seed voltage can be applied to the glass substrate by the lower bonding plate member 5 (while the ground is grounded).  Although the preload pressure and the seeding voltage can be applied as described above, There is a need to limit the contact area between the donor wafer and the glass substrate. At the same time, the preload pressure and the seeding voltage are applied to limit the area that allows pre-bonding.  In this regard, A divider member 3A and the previously mentioned preloading plunger 470 can be used. usually, The separator member 3 is coupled to the lower side bonding plate member 5 (see FIGS. 1 and 5) and is operable to prevent the donor wafer and the periphery of the glass substrate from contacting each other when the pre-bonding is achieved in the central region thereof . After reaching the pre-bonding, The separator member 3 allows the glazing wafer and the glass substrate to contact each other (including the peripheral edge thereof) for a complete bonding process.  Referring to Figure 14, It is a perspective view of the divider member 3〇〇. The divider member 3 is operable to mechanically assist in securing the donor wafer and the glass substrate. Page 33 200811992 The edge region is offset from the surface of the twisted wafer contact. In the - or multiple embodiments, The separator member is operable to provide a symmetry (multiple position) interstitial between the Shihua body wafer and the glass substrate.  The knife-interrupting member 300 has an annular configuration and includes a ring-shaped rotating ring 304. And a plurality of shim assembly 3〇6. According to the mounting ring 3〇2, it is essentially a nuclear structure. It comprises a central aperture 3〇8 and a peripheral edge 31〇. A plurality of sets of mounting elements (e.g., apertures) 312 are located around the peripheral edge 31〇 and are configured as auxiliary members, such as the mounting member 14〇, It is just the pillar that is guided upwards (see ^ 1, 5, And 6). According to the size of the components 140 and 312, The shape and position will be such that it can be attached to the bottom plate 1抬8 which lifts and presses the component pair. In the illustrated embodiment, The mounting ring 302 cannot be rotated relative to the lower jaw 108 of the lifting and pressing member 100.  The rotating ring 304 is also substantially annular in configuration and further defines a central aperture 308. The rotating ring 304 is rotatably engaged to the mounting ring 3〇2 and is rotatable relative to the inner ring and the bottom plate 08 of the lifting and pressing member 100. The rotating ring 304 includes a plurality of sets of cams 32 (eg, cam slits) at its peripheral edge, Each shim assembly 306 includes a cam 32 〇. One of the cams 320 is a gear cam. It comprises a plurality of teeth </ RTI> which are spaced apart from the gears 142 of the stepper motor 144 of the lifting and pressing member 100 (see Figure 6). When the stepping motor 144 turns the gear 142 Β temple, Rotating ring 3〇4 phase, The child is in the garment % 302 and the bottom plate of the lifting and pressing member 1 转 8 turns. The control unit provides drive actuation to the stepper motor 144 to obtain precise rotation of the rotating ring 304.  Each shim assembly 330 includes a shim 330 coupled to the slip block 332. Page 34 200811992 The slits are sized and shaped to fit the cymbal and the separation of the shi: two? . The shim is operable to achieve a radially inward and outward movement relative to a central region of the divider member 300 (and a central region of the interface between the wafer and the glass grade). Radial movement can be achieved by slip-reading between the slip block 332 and the mounting ring 302, for example, Each of the gap filler components may include a stalk or a stalk bushing 334. It is slidably detachable from one or more of the pins 336. The latch 336 can extend radially from the peripheral edge 310 of the mounting ring 302. The time-shifting of the guide bushing 334 along the pin 33 produces the radial movement of the previously mentioned slip block 332 and the shim.  The mother-slip block 332 also includes a cam guide (not shown) such as a roller or a post. It is connected to each of the cam slits 320. The rotation of the rotating ring 304 (by actuation of step U4) applies radial force to the respective slip block 332, It is allowed to slide along the column 336 (by the guiding axis) in a controlled manner. thus, All shims 33〇 move in a symmetrical movement, It avoids any unevenness in the application of the crystal (4) glass base. It is understood that the rotation of the rotating ring 304 can use other actuating members such as cylinders. Linear motor, Arrangement of electromagnetic spiral tubes, etc.  The shim 330 is preferentially electrically conductive, The s〇G electromotive force cannot be made to fit the mounting ring 302 and other parts of the bonding device 10. E.g, The slip block 332 can be formed using a ceramic material. According to the ring and the rotating ring, it can be located under the high heat area of the lower side of the bonding plate member. It is protected from excessive heat addition.  As shown in FIG. 11A, The upper side panel member shed may include one or more other apertures to allow access to the thermal plate 408. E.g, The first aperture 454 allows page 35, 200811992 thermocouple inserted through the component, It allows the thermal connection of the heating discs 4〇8 and the provision of temperature feedback signals to the control unit (which allows the heating of the disc 408 and the Shihist wafer for precise temperature adjustment). It is understood that the aperture 454 extends from the rear of the upper bonding plate member in Fig. 11A and is shown in dashed lines. A second aperture 456 (also from the back) may also be included, It provides additional access to the heated disc 408 for further thermal adjustment. The first aperture is located in the central heating element area of the heating disc 4〇8, At the same time, the second aperture 456 is located at or near the annular heating element on the side of the heated disc. This allows independent feedback and control of the excitation signal for each of the central and annular heating elements (unless they are formed integrally), This allows compensation for thermal edge effects as well as overall temperature adjustment.  Figure 15 is a perspective view of a thermocouple assembly 494. It can be used to extend through 孑L from 454, 456 and _ relay hot plate 408. Thermocouple assembly 494 includes a standard thermocouple plug 495, Spring assembly 496, And probe 498. Probe 498 is operable by spring assembly 496 to urge forward, The deflection is against the heating disc 408, This ensures proper heat transfer between them.  The detailed structure of one or more embodiments of the lower side bonding member will now be described. The lower side bonding plate member 5 〇〇 mainly functions with the upper side bonding plate member 4〇〇, That is, heating the glass substrate, Provide pressure to the glass substrate, Providing an electromotive force to the glass substrate, And cooling the glass substrate.  In accordance with one or more embodiments of the present invention, The lower side bonding plate member 5 is characterized by the above-described embodiment of the upper side bonding plate member 4'. E.g, In the embodiment shown in Figure 13, The upper side and the lower side of the bonding plate member iron 5〇〇 are substantially the same, In addition to the upper side of the bonding plate member 4, an aperture 45 〇 and a preloaded plunger 470 are used. However, the lower side of the bonding plate member does not have.  Page 36 200811992 : The heating function of the side panel member 500 is operable to provide a temperature lower than or 60 (TC, It can be close to or exceed 1 〇〇 (rc. The lower side bonding plate member 500 is operable to provide a heating uniformity of 5% of the entire glass control set point. The electromotive force (about 175 volts DC) can be selectively applied to the glass frit by the lower side bonding member 500 and evenly distributed over the entire substrate surface. Other embodiments of the lower side bonding plate member 500 may provide the lake with controlled fluid flow as an actively cooled glass substrate.  Although it is not shown that the embodiment of the lower side bonding plate member in Fig. 16-21 contains the side characteristics of the upper side bonding plate member as described above, The lower jaw member _ can also contain a number of different characteristics. Figure 16 shows the lower side of the bonding plate member closed to the shed. 17 is an exploded view thereof. The lower side bonding plate member 5〇〇 main assembly includes a bottom plate 502, Insulator 5〇4, Heating the disc 5〇8, And the radiator 51〇.  These components are located within housing 506. Coupled or supported in the outer casing, It can be formed from stainless steel.  The bottom plate 502 is spliced to the bottom of the outer casing 506. Thus forming a cylindrical structure,  It defines the internal volume to withstand the insulator 5〇4. E.g, Without limitation,  The base 502 is machined from the pottery material (for example, c〇^r〇nics 902 can be used to process the earthworms). It provides structural integrity and high temperature capability. The insulator 504 is operable to restrict heat from flowing into the base 502 by the heating disc 508. The outer casing 506 and other parts of the bonding device. E.g, The non-limiting insulator 504 may be formed of a ceramic foam insulating material such as a dense molten fused stone. The temperature insulating property of the insulator shall prevent heat from flowing from the sheet 508 into the base 502 (and other components) and providing the lower side bonding sheet. Component 5 〇〇 low thermal inertia (as fast thermal signal capability).  Page 37 200811992 Heating disc 508 and insulator 504 can be bonded together using a ceramic bond such as Cotronics RESB0ND 905.  The heating disc 508 is operable to generate heat in response to electrical excitation (voltage and current), Conductive insulation properties are also provided. Any electromotive force that directly or indirectly applies σ to the glass substrate will not be applied to the base or the exterior. thus, The heating disc 508 can be formed of a conductive insulating property as well as a substantially thermally conductive material.  Referring to Figure 18, The heating disc 508 can be formed by a heating disc 508 sandwiched between two (or more) electrically conductive insulating layers 5_ by a resistive heater layer 508.  E.g, The non-limiting resistive heater layer 508 can be formed from the 〇 il winding graphite and the conductive insulating layer 508B can be formed from molten vermiculite. The resistive heating layer 508A and the electrically conductive insulating layer 508B may be bonded together using a ceramic material such as RESB0ND 905 (which exhibits low expansion characteristics).  Due to the need to heat evenly, The heated disc 5〇8 can include thermal edge loss compensation. In this embodiment, The heating disc 5〇8 can comprise two heating zones.  - Sideways in the center and the other in a circular form around the central area. The heating zone can be applied to the resistive heating layer 5A8A. E.g, When the material is hovered outward from the center of the layer 5 The individual heating zones can be formed by varying the respective widths of the resistive material. This results in different electrical resistance (and heating characteristics) of the material, It allows for the use of a single voltage and current to encourage bribery, The purpose of adding slashing will respond to different voltages and currents. This is due to the difference in resistance as a function of the radial distance.  The voltage and current planes of the resistive heating layer 508A are boosted by a power supply (not shown on page 38, 200811992). And controlled by the control unit to achieve temperature regulation (which uses feedback control as outlined below). The control unit is operable to follow the program 5〇〇 ___ to avoid heating and to stay at any desired temperature. Called 552 (_ 16_1? And the end 埠 508C (Fig. 18) allows the power supply conductive scale to be connected to the resistance heating layer 5· 散热 The heat dissipation 1 510 is thermally connected to the heating plate # 5 () 8 and is operable to form a heating distribution which is difficult to form by the overlay. The cake money is more evenly distributed to the glass substrate. heat sink, 51〇, Due to its direct pay glass and heat heating: The board becomes:  And additionally applying a voltage thereto. Again, The surface voltage applied to the bulk wafer and the glass substrate is applied by the next money K i ) to the electromagnetism of one of the shixi body sheets and the glass substrate (while the other is grounded); Or, by applying (11), each of the electromotive force is applied to both the Shihua body wafer and the glass substrate. Therefore, the ability of the lower side bonding plate member 500 to apply an electromotive force (unlike ground) to the glass substrate is an additional characteristic. If an adhesive electromotive force (other than ground) is applied to the glass substrate by the lower bonding member, It can be evenly distributed over the entire surface of the substrate. And can be in the range of 175 volts DC.  Among the materials that can be used to implement the heat sink 510, Conductive graphite is desirable, for example, THERMAF0IL. The port 553 allows connection to the H 510 by a high voltage power supply (not shown). The paste unit is operable to reduce the control of the high voltage supply voltage value to obtain the desired voltage value (e.g., 175 volts dc).  Now take the exam 19, It further shows the structure of the lower side bonding plate member _ and the Wei project. As shown by ® The bottom plate member can be selected. f The ground contains holes # 550, It allows the adhesive process towel to be close to the glass substrate, For example, page 39 200811992 applies a preload and/or voltage to the substrate. It is necessary to state that this additional feature does not need to be used. But it can provide useful operations, As explained below. When using the hole control 550, Its preferred use will allow the preload pressure and/or seed voltage to be applied to the glass substrate at the applied force π bonding voltage and the full bonding pressure. As described above, the upper side of the bonding plate member shed, The purpose of preload pressure and seed voltage is to apply the bonding voltage. Initially bonding the anode in the local region of the interface between the wafer and the glass substrate, It will make the anodic bonding of the entire interface area easy. The divider members can be the same size or different from the bonding voltage. However, lower or the same voltage is believed to be better, For example, DC 750-1000 volts.  , E.g, The preloaded plunger WO can be used to achieve the previously mentioned preload function. The preloading plunger 570 can be substantially the same as the prior preloading plunger of Figure 12 . The preloading plunger 57 is operable to «the plate member 500 and extend through its aperture 55Q to electrically and mechanically slam the glass substrate. The electrode of the pre-loaded plunger 57G is said to be applied with at least a seed voltage. The preloaded plunger 57() is co-axially attached to the plug and electrode 584 and the preload pressure can be applied separately (or in conjunction with electrode 584).  The lower jaw member 500 can further include one or more apertures to allow the thermocouple to be inserted through the assembly, Making it freshly connect to the heating disc 508 and providing a temperature feedback signal to the control unit (which allows the heating of the disc 5〇8 ϋίϋ&amp; Μϋ degree regulation). The structure and location of the thermocouple aperture (and the thermal envelope itself) are consistently the same as previously described for the upper bonded panel member.  Page 40 200811992 I Figure 20-21, It shows another function, It is used for the lower side bonding = component item or other functions of the multiple embodiment towel.  Fig. 20 is a cross-sectional view showing the active bonding member 5_. The figure is an exploded view of the lower side bonding plate member 500A. In this embodiment, Lower side bonding plate member 5_, The % edge 5Q4A contains one or more cooling channels. When needed, the cooling fluid flow can be purely transported when the S0G structure, especially its glass substrate temperature, is lowered. E.g, The cooling passage 52G is spirally extended from the hard center of the insulator to the peripheral edge thereof. Channel 520 can be machined into the surface of insulator 504A. The inflow tube is operable to add cooling fluid to the passage, with, The outlet tube 524 is operable to remove the cooling fluid from the passage 52A (not shown) to add the cooling fluid to the same inflow g member 522 for the cold portion. Active cooling can be achieved by using a control unit to control the temperature and flow of the cooling fluid through passage 52(). As shown in Figure 13, a suitable flow-combining member can be connected to the inflow fittings 522 and j: The member 524 is connected to the plate member with a fluid source (not shown). The adhesive member 10 can be placed in the atmosphere to provide a control/ring. Atmospheric conditions, Such as vacuum, (for example, for the system, Nitrogen, etc. wire, The street has a miscellaneous atmosphere (the atmosphere of one or more oxidants) without damaging its components. In particular, the bonding plate member 400, 500.  The operation of the bonding apparatus 10 will be described in detail with reference to the drawings. Figure, final na structure _, Figure (4) shows that the intermediate structure eight is fabricated using one or more bonding device 10 embodiments. Refer to Figure 24 ’ 41st 苜 200811992 Before adding the material to the bonding device 1G, The donor semiconductor wafer is said to be implanted, for example, by polishing, Cleaning to produce a relatively flat and uniform graft surface 621 is suitable for bonding to a glass or glass ceramic substrate 602 (Fig. 23). For illustrative purposes, The semiconductor wafer 62 can be a single crystal germanium wafer. Any other suitable semiconductor material as described above may be employed.  Epitaxial layer 622 defines epitaxial layer 622 by implant processing graft surface 621 to form a fragile region below implant surface 621 of donor semiconductor wafer 62Q. E.g, Hydrogen ion transplantation can be performed on the transplanted surface. Or other rare earth metal ions such as boron, Hey. The donor semiconductor wafer 620 can be processed to reduce, for example, the hydrogen ion concentration on the hetero-surface 621. E.g, The donor semiconductor wafer 620 can be cleaned and cleaned and the graft donor surface 621 of the epitaxial layer 622 can be moderately oxidized. Moderate oxidative treatment consists of treatment in oxygen plasma, Ozone treatment, Using hydrogen peroxide, Hydrogen peroxide and ammonia, Hydrogen peroxide and an acid treatment or a combination thereof. It is expected that the terminal surface hydration of the terminal base will be a decyloxy group during these treatments. It thus makes the surface of the stone wafer hydrophilic. Oxygen polymerization can be carried out at room temperature and the ammonia or acid treatment temperature is between 25 and 150. (: between. Appropriate surface cleaning of the glass 602 (and the epitaxial layer 622) can be performed.  Assuming that the bonding device 10 is initially pointed, Therefore, the upper side of the bonding plate member is rotated upward (as shown in Fig. 2). The donor body wafer 62 and the glass substrate are inserted into the bonding device 1G. In this example, It is assumed that the glass substrate 6Q2 is lowered and fixed by gravity to the lower bonding plate member and the donor semiconductor wafer 620 is placed on the glass substrate 6〇2. When a preload pressure and a seed pressure are applied to act on the donor semiconductor wafer and the central portion of the glass substrate, the separator member 300 acts on the donor semiconductor crystal (4). As explained in Figures 6 and 14,  12, Can be rotated relative to the mounting ring, Therefore, the shims 33 can be driven on the peripheral portion of the slab 5 〇 2 . The donor semiconductor wafer 620 is thus shimmed, The shim 330 is positioned between the donor semiconductor crystal and the glass grade 602. thus, The donor semiconductor wafer 62 is separated from the glass substrate 602 by the thickness of the shim 33.  Secondly, the upper side of the upper plate member is operable to rotate downward (by opening and closing the member 2), Making the upper and lower side bonding plate members shed, 500 to _, As mentioned above for Figure 7, The jack 23 作用 acts by operating the shaft 236, It results in lowering the shaft guide bushing 214, And the _ plate ^ hinged foot lowering causes the pallet to simply rotate on the pivot link 258, The trays 2〇8 and the upper side of the rotating ring 4〇〇 are tilted downward until the pallets 2〇8 engage the legs of the hinge plates 25Q. At this point, The upper side bonding plate member 400 is oriented in parallel with respect to the bonding plate member 5''. The downward movement of the hinge plates causes the lock 246 to be lifted up and the pressing member just (Fig. 6) to guide the column 116, The end of 118 is 114, 116Α, 118Α. The operator can simply attach the lock 246 to the guide post 114 of the lifting and pressing member 100, 116, 118. The lock 246 ensures that the upward pressure on the donor semiconductor wafer 620 and the upper adhesive panel member shed can be offset by the pallet 2〇8 without exposing the lifting and pressing members to excessive pressure.  The lifting and pressing member 100 can apply a rough displacement to the lower side bonding plate member 500 (and the glass substrate 602 and the donor semiconductor wafer 620) toward the upper side bonding plate member 400. Since the electrode 484 of the preloaded plunger 470 extends on page 43 200811992, the low heat sink of the slab member shed, When lifting and pressing the component, When the lower side of the lower side of the board member _ toward the upper side of the board member The electrode contacts the donor semiconductor wafer (4). The shim 34 of the spacer member prevents the donor semiconductor wafer 62 and the glass substrate from contacting each other: The preloading plunger 470 will tilt to bend the donor semiconductor wafer 62, The central portion thereof is brought into contact with the glass substrate 602. thus, Applying pre-load pressure and seeding voltage can apply full pressure, temperature, And the voltage before starting the body half ^| wafer 620 and glass substrate, The anode is bonded.  The performance of the body semiconductor crystal # 620 and the substrate (four) the beginning of the towel part = bonding, The divider member 300 can accept the withdrawal of the shim 33〇. Control Single το can give instructions to the stepper motor to compare the lions with the ring. Rotating the waiter 裱 relative to the mounting ring 3〇2, Thus, the shim 33 is withdrawn between the donor semiconductor wafer 62 and the glass substrate 602. The shims 33 〇 symmetry l±i cut and move, Will it avoid applying the semiconductor wafer 62 to the glass substrate go? Any uneven friction load between. Beneficially, If the bonding process is carried out in the air, The central portion of the donor semiconductor wafer and the glass reciprocating strip that subsequently withdraws the shims allows any gas to be vacuum extracted between the donor semiconductor wafer 62 and the glass substrate 602. thus, The gas (for example, air) that hinders proper adhesion between the donor semiconductor wafer 62A and the glass substrate 602 can be reduced.  Referring to Figure 25, The glass substrate 602 can be bonded to the epitaxial layer 622 using an anode (electrolysis) process. By applying a temperature to the glass substrate in direct contact with the donor semiconductor wafer 62 and using the bonding device 1〇2 described above,  Voltage and pressure. The bonding device 1 can be used in a computer program (running on control 2,  On the unit processor) control the operation to achieve the desired anodic bonding. thus,  Page 44 200811992 It has been considered that the differentiator program causes the various components of the bonding apparatus 1 to remain in the manner described above to achieve anodic bonding.  The extension layer 622 is applied outside the wafer (4). And the glass New York 6〇2 is heated at the same temperature gradient. The glass substrate 602 can be heated to a higher temperature (by the lower side bonding plate member 500) than the donor semiconductor wafer 620 and the epitaxial layer 622 (by the upper side bonding plate member). E.g, The temperature difference between the glass substrate 6〇2 and the donor half #620 (and the epitaxial layer micro) can be limited to 6 C to 200. (: . This temperature difference is needed for the glass, The thermal expansion coefficient of the glass matches the coefficient of thermal expansion of the yoke semiconductor wafer 620 (as matched with the thermal expansion coefficient of the Shi Xi), This makes it easy to separate the subsequent epitaxial layer 622 from the semiconductor wafer 620 due to thermal stress. The glass substrate (10) and the donor semiconductor wafer 620 are temperature-dependent at a strain point of the glass substrate 6Q2 (3).  Mechanical pressure can also be applied to the intermediate assembly. The pressure range is available! Between 1〇〇 Psi, Between 6 and 50 psi, Or about 20 psi. Although higher pressure can be applied, For example, pressures at or above l00psi are possible, This pressure should be used with care, This will cause the glass substrate 602 to rupture. As described above for Figure 4A, 4B,  And 6 instructions, The donor semiconductor wafer 620 and the glass substrate 〇2 are in contact with each other under the controlled actuation of the lifting and pressing members 100. Lifting and pressing the member 1's second actuator 106 raises the lower pallet 1〇8, The lower side bonding plate member 5〇〇, With f glass 602 to - position, Controlled heating and pressure can be achieved between the donor semiconductor wafer 62A and the glass substrate 602.  The electric i can also apply force U to both ends of the intermediate component. For example, the donor semiconductor wafer 620 has a positive electromotive force and the glass substrate 6〇2 has a lower electromotive force. Applying Electricity Page 45 200811992 The momentum causes the alkali or alkaline earth metal ions in the glass substrate 602 to further enter the glass substrate 602 from the semiconductor/glass interface. It achieves two functions·〇) to produce an interface of untested metal or soil-measuring metal particles; And (i i) the glass _ becomes very reactive and the delaminated layer 622 is occluded to the donor semiconductor wafer 620 by applying heat at a relatively low temperature.  put pressure on, Difference temperature, And the difference voltage lasts for a controlled period of time (e.g., about 6 hours or less). thus, The high value of the electromotive force drop is zero and the donor semiconductor wafer 620 and the glass substrate 602 allow cooling to at least initiate separation of the epitaxial layer 622 from the donor semiconductor wafer 620. The cooling process involves active cooling. Thus, the cooling fluid is forced into one or both of the upper sides and the lower side of the bonding plate member 400,  500. In one or more embodiments, The active cooling profile can include cooling the donor semiconductor wafer 62 and the glass substrate (10) for different distributions (e.g., cooling rate, Residence time and/or size) to produce good quality in the epitaxial process.  As shown in Figure 26, After separation, The resulting structure can include a glass substrate 602 and a layer of germanium overlying the semiconductor material adhered thereto. In order to be able to access the structure, The locker 246 and the guide post 114,  U6, 118 disarming and actuating the jack 230 (e.g., by applying rotational force to the shaft 236), The shaft 232 is configured to increase the guide bushing 214 and the hinge plates 25 to apply vertical force to the pallet view by the slider and the frame link 258 (Figs. 6-7). The upper side bonding plate member is thus vertically raised away from the lower side bonding plate member 500, The temple has a parallel relationship. The continuous upward force on the pallet 208 causes the upper jaw member 400 to tilt upwardly in response to rotation about the pivot link 2诏. The intermediate structure can be removed by the bonding device 10.  Page 46 200811992 Any unwanted or rough semiconductor material may be removed by surface 623 via thinning and/or polishing techniques such as CMP or other techniques known in the art to provide semiconductor layer 604 on glass substrate 602 as shown in FIG.  It is understood that the donor semiconductor wafer 620 can be reused to continuously fabricate other SOG structures 600.  'In accordance with the present invention - or a plurality of more advanced steps, The bonding device 1 is on a substrate such as glass, Glass ceramic, Ceramics are embossed with tiny enamel plates, such as the traditional method of making money on glass, which can be used (for example, using UV-curable polymers). Or remove the process (eg, the formula is not required in each application; The polymer structure is very variable, But with the required material properties, And etching methods can produce tiny structures, But slow and expensive. According to the invention - item or items, _ by the main device via _ people / miscellaneous to New Zealand. The main money is made by thank you ‘and the melting point is higher than the substrate cut. The appliance and/or wire is heated to a small knot in the substrate inflow. then, The components are cooled and separated.  , Item or township item _ towel, The 1G device allows the wire to be quickly heated and/or silked to improve throughput. The previously mentioned sticky woven 10 silk cooling chicks, By the lake, Vacuum atmosphere, etc. can also be used to increase production in the south.  Referring to Figure 28, The bonding device 10 is operable to have a relatively small 〇7〇1=apparatus 700 (e.g., nanometer scale) on at least one surface thereof. In ..., The small structure on the 700 is the opposite of the need for relief on the counterattack page 47 200811992. E.g, The appliance 700 can be coupled to the lower side bonding plate member 5A and the substrate 702 (e.g., a glass substrate) can be placed over the appliance 700. Can force 17 to change,  The substrate 702 can be transferred to the lower side of the bonding plate member 5 and the device 7 can be placed on the substrate 702. In other embodiments, The appliance can be clamped or secured to the upper side bonding plate member 400. Individual GRAFOIL pads 704A, The 704B can be placed on the upper/lower side of the bonding plate member 4〇〇,  5〇〇 and between the substrate 702/the appliance 700.  The bonding apparatus 10 is then closed (as explained above) and the temperature is applied to the Tg of the glass substrate 702. The pattern or structure is thus transferred from the appliance 700 to the glass substrate 702. The iterative process can be carried out under the pressure of the controlled pressure characteristics of the bonding apparatus 10 described above. Can be changed, The glass substrate 702 can be flowed into the tiny structure of the appliance 700 using gravity and atmospheric pressure.  The appliance 700 can be made from a single material, The structure does not change when the temperature is raised to or from the south 33^ reverse 702 flow temperature, such as the glass substrate Tg. E.g, Molten stone stone can be used to implement the device. The minute structure 7〇1 can be formed in the device 7〇〇 by the active 隹 余 余 (RIE). Surface treatment of the appliance 700 and/or the substrate 702 may also be employed. For example, diamond coating film.  Although the invention has been described in terms of specific embodiments, It is understood that these examples are merely illustrative of the principles and applications of the present invention. It is to be understood that various modifications can be made in the embodiments and the other embodiments can be devised without departing from the spirit and scope of the invention.  BRIEF DESCRIPTION OF THE DRAWINGS In order to enumerate various items of the present invention, The drawings show the priority of the present invention, It is understood by people that the invention is not: Limited to the precise arrangement and device shown.  Page 48 200811992 The figure is a perspective view of an embodiment of the closure device of the present invention in a closed configuration.  The picture shows that the first-figure bonding device is a front view of the open structure.  , The figure shows the front view of the partially closed structure of the bonding device.  The fourth figure A is a front view of the first embodiment of the bonding device.  , _, - "The side view of the device.  The fifth figure is a partial decomposition of the first figure bonding device.  f is a perspective view of an embodiment of the lifting and pressing member, It is suitable for use in a third purpose bonding device (and/or one or more other embodiments).  Figure 7 is a perspective view of an embodiment of the open and closed members, It is suitable for use in the first image bonding apparatus (and/or one or more other embodiments).  Figure 8A is a perspective view of an embodiment of the upper (or lower) bonding plate member,  It is suitable for use in the first image bonding device (and/or - or many other embodiments).  Figure 8B is a cross-sectional view of the eighth panel A along which the bonding plate member is unfolded along the straight line 8B_8B.  Figure IX is a perspective view of the heater element, It is suitable for use on the upper (or lower) bonding plate member of Figure 8A or other embodiments.  Figure IXB is a perspective view of another heater element, It is suitable for use in the upper (or lower) bonding plate member of Fig. 8A or other embodiments.  The tenth figure is an exploded perspective view of the bonding plate member of the eighth drawing A.  Fig. 11A is a top view of the bonding plate member of the eighth drawing A.  The first figure is the sectional view of the elliptical plate member along the straight line in the eleventh figure.  Page 49 200811992 Brother 10 Figure C is the sister Η * — ^ Figure Α Α Α Α 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着  ^ Figure 12A is a side view of the preloaded plunger, It is suitable for use in Figure 8 of the Figure A (and/or one or more other embodiments).  Figure 11 is a cross-sectional view of the twelfth Figure A preloaded plunger along a straight line β2β-12Β.  , Figure 13 is a cross-sectional view of the upper and lower side bonding plate members. It is suitable for use in the first image bonding apparatus (and/or one or more other embodiments).  #图图图 is a perspective view of an embodiment of a divider member, It is suitable for use in a first-picture bonding apparatus (and/or one or more other embodiments).  , The fifteenth figure is an exploded view of the thermocouple in the preloaded fixture. It is suitable for use in the eighth embodiment of the gusset member (and / or - or a plurality of other embodiments).  ,  Figure 16 is a perspective view of another embodiment of the upper (or lower) bonding plate member, It is suitable for use in the first image bonding apparatus (and/or one or more other embodiments).  w,  Figure 17 is an exploded view of the bonding plate member of the sixteenth embodiment.  Figure 18 is an exploded view of the heated disc. It is suitable for use in a sixteenth plate member (and/or item or a plurality of other embodiments).  The nineteenth figure is a scraped surface view of the bonding plate member of the sixteenth figure.  Figure 20 is a cross-sectional view showing another embodiment of the upper (or lower) bonding plate member, It is suitable for use in the first Figure Bonding Farm (and/or one or more other embodiments).  ^ The twenty-first figure is an exploded perspective view of the tiling plate member of the twentieth.  Page 50 200811992 Side View = Twelve Diagrams is the first diagram of the bonding device located in the atmosphere control tank. The twenty-third diagram is the module diagram. It shows that the crucible device can be manufactured using the first image bonding device.  , /' commits the twenty-fourth to twenty-sixth drawings as a module diagram, It shows an intermediate structure formed and/or operated by the use of the first image bonding apparatus.  The twenty-seventh picture is a module diagram, It shows the formation of the final SOG structure using the first image bonding device.   &lt; The eighteenth figure is a module diagram of the first figure bonding apparatus, which is used for the application of the micro structure relief imprinting. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 10 is a cross-sectional view of a component: a bonding device 10; a panel 12; a support 14; a missing and pressing member 100; a base 102; an actuator 104, 106; a shaft 104A; a lower tray 108; an upper surface 11; Side surface 112; guide post 114ii6ii8; upper end 114A, 116A, 118A; guide bushing 120, 122, 124; holder 130; press tl 14 〇; gear 142; stepper motor 144; position sensor 150; And closing member 2; lifting member 202; actuator member 2〇4; tilting assembly 206; pallet 208; base 210; guiding shaft 212; guiding bushing 214; fixing plate 216; jack 230; 232; coupling element 234; shaft 236; end 240, 242; aperture 245; hinge plate 250; stop arm 252, 254; slit 256; stop 257; pivot link 258; stop 259; slider 260; Member 300; mounting ring 302; rotating ring 3〇4; shim assembly 306; central aperture 308; peripheral edge 310; mounting member 312; cam 320, 320A; shim 33 〇; slip block 332; Bow | bushing 334; page 51 200811992 pin 336; upper side bonding plate member 400; base 402; insulator 404 · back plate 406, inlet 406A, 406B; outlet 406C; heating disc 4 〇 8, 408A, 408B, force σ Thermal element 4〇9A, 409B; Heater 410; end bee 4iiA 411B · channel 420; inflow tube 422; outflow tube 424; support ring 43A; pad 432, 434; fin 436; holder wafer 440; aperture 450; end port 452, 453; aperture 454, 456 Fluid coupling 460; preloaded plunger 47〇 'peripheral 472; proximal end 474; distal 476; end turn 478; plunger 480; stop block 482; electrode as electrode end ·; pressure ring, occupational couple assembly 494; plug nat; turn _ shed; riding shed; lower _ slab member 5 〇〇; bottom plate 502; insulator 5 〇 4, 504A; outer casing 506; heating disc 5 〇 8; resistance heating layer 508A; conductive insulating layer 508B End 埠 508C; heat sink 510; passage 520; inflow tube 522; outflow tube 524; aperture 55 〇;

埠 552, 553; fluid coupling member 560; plunger 570; electrode 584; SOG structure 600; substrate 602; donor semiconductor wafer 62 〇; graft surface 621 · epitaxial layer 622; surface 623, 623 Α. ’ page 52

Claims (1)

200811992 X. Patent Application Range: 1. An anode bonding device comprising a first bonding plate member operable to interface with a first material sheet and providing at least one controlled heating, voltage, And cooling; a second I occupying plate member operable to engage the second material sheet and providing at least one controlled heating, voltage, and cooling; the pressure member being finely coupled to the first and a second bonding plate member and a pressure operable to urge the first and second dimensional plate members toward each other to be brought together against each other along the respective surfaces of the first and second material sheets; It is operable to generate control signals for the first and second working plate members and the pressure member to provide force heat, voltage, and force distribution sufficient to achieve anodic bonding between the first and second material sheets. 2. The anode bonding apparatus according to claim 1, wherein the first material sheet is at least one of a glass substrate and a glass ceramic substrate, and the second material sheet is a donor semiconductor wafer. 3. The anode bonding apparatus according to claim 1, wherein the heating part 々 comprises at least one peak temperature of more than 60 (rc, the peak temperature is at least one of: and at least one of the second material sheets) 4. The anode bonding device according to item 1 of the patent application scope, wherein the heating branching package is less red - the peak temperature is between 1000 and 1000. The peak 2 is the first and second material sheets. At least one temperature. 5. According to the anodic bonding device of claim 1, wherein the force of the mouth is at least - a peak temperature is greater than 1000 tons: the peak ^ ^ ^ page 53 200811992 The temperature of at least one of the first and second material sheets. 6. The anode bonding apparatus according to claim 1, wherein the voltage distribution comprises at least one peak voltage at a frequency of 1 volt to DC 2 〇〇. Between the volts, the peak voltage is the voltage of at least one of the first and second material sheets. 7. The anode bonding device according to claim 6 of the patent application, wherein at least one of the following: Cloth contains At least a peak between the first material sheet and the second material sheet is between volts and money leakage; one of the first and second material sheets is at least a ground 丨 and a peak voltage difference By applying a positive electromotive force to the first and second material sheets - and the New Wei light material, the material is embossed according to the patent, the pressure distribution includes the first - and the second material version lay at least - the peak pressure of the peak is between (4) and lOOpsi. 9. According to the towel, please refer to the item of the Yangm to the Weiqi towel pressure distribution 匕3 and the first material sheet At least one peak pressure is 邠 psi. 10. According to the patent, please refer to the anodic bonding device of the patent item i, in which the control order = can be operated, the new less - er - and "_ cake production control yf and the first material The sheet provides an active cooling profile to promote the dispensing of the second and the second preserved material, the epitax 33 being attached to the other - and -: material sheets. 11. According to claim 10 The anode bonding device, in which the cooling is divided into 54th 200811992 cloth to the first - and the second continent To a paste cooling rate and varying degrees of cooling. 12 - An anode bonding device comprising: a first bonding plate member operative to engage the first material sheet, and At least - controlled heating, m and cooling; a θ slab member operable to engage the second sheet of material and provide at least a controlled heating, voltage, and cooling; The pressing member is operatively coupled to the first bonding plate member and is operable to urge the 帛- and 帛4 plates to face each other such that the first and first sheets of material are brought together along their respective surfaces A controlled pressure is applied to assist in achieving anodic bonding. 13. An anodic bonding apparatus according to claim 12, wherein: the first and the second splicing plate members each comprise a bearing surface, each bearing surface defining a bearing plane And the lifting and pressing members are operable to apply a controllable force to the first bonding plate member, the force substantially flank the bearing surface. 14. In accordance with the shot, reduce the anode miscellaneous item of item 13, wherein the lifting and pressing member includes a telescoping actuator operable to apply a controllable force in response to providing a change in actuator fluid pressure. 1 = According to the application of __ Item 14 of the anode, the fluid is a gas. =^纲_13 The tenth step of the item, wherein the lifting and pressing member can be operated by the actor-actuator Wei, which applies the coarseness of the first bonding plate member to the first bonding of the first and second layers of 200811992 The plate member faces the second bonding plate member; and the movable force exerts a controllable force to the first. __16, the actuator of the projectile lifter is operable to provide a first boost. The anode according to claim 16 is a retractable actuator that is operable to provide a = 19 According to the scope of the patent application, the anodic bonding initial contactor function guide material-material two materials are recorded in the joints and the respective wires 20. According to the scope of the patent application, the anode bonding device, wherein the lifting The lifting and pressing member includes a plunger driven actuator operable to provide the function of the first actuator. 21. According to the anodic bonding device of the second aspect of the patent application, the placing of the first and the first crane H 帛 帛 余 余 余 将 将 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生Displacement. 22. The anode bonding apparatus according to claim 21, wherein the actuation of the second actuator does not cause any displacement to the first actuator, and the anode bonding device includes : the first bonding plate member is operable to engage the first material sheet and the second bonding plate member is operable to engage the second material sheet, the first and the second bucket member each comprising a bearing surface, Each bearing surface defines a bearing plane to engage one of the materials of the brothers and brothers; and page 56, 200811992 Open and closed ages operable _ to the first bucket and can be used: (1) When the closure is pointed, it will assist the first and second material sheets along their respective tables to rely on the 纽 纽 压力 pressure; and (11) for the double movement opening distribution, wherein the first movement will be the first The second plate member is separated from the first bonding plate member by the splicing plate member, the first-bonding plate member is separated, and the direction thereof is perpendicular to the respective bearing surfaces thereof, and the movement of the second plate member is separated from the first bonding plate member. The bearing surface of the plate member is inclined to the bearing surface of the first bonding plate member. According to the anodic bonding apparatus of claim 23, wherein the bearing surfaces of the first and second splicing plate members are kept parallel during the first open movement of the slewing member. 25. The anodic bonding apparatus according to claim 23, wherein the opening and closing member comprises: operably extending and retracting perpendicular to the first bonding member, the bearing surface of the directional member; - and the third end portion of the pallet H field plate member is placed towards its first end, and the pallet is pivotally coupled to the lifting member between the first and the = ends. 26. An anode bonding apparatus according to claim 25, wherein: the opening and closing member comprises one or more stopping arms extending in parallel to the lifting member, the weight of the sliding member is L, such as the bottom end of the lower tray Department; and when lifting the county f-moving the towel for limited operation, extending the domain arm, the first end of the plate member is separated by the first-bonding plate member, the red direction - threaten the county's surface. ,to:? To inhibit the movement of the second end of the pallet beyond the limited operation J° 产生 leverages the pivotal coupling of the pallet and the lifting member at the second end of the pallet. The anodic hybrid device of item 27, wherein the lever side at the pallet 1 w will tilt the second | slab member away from the first affixing member. , components. H applies for the anodic bonding device of the 27th item of the patent, wherein the lifting structure: the opening and the retracting of the factory and the bucket plate member will cause the first plate t to be tilted by the lever at the second end of the plate The anodic bonding device according to claim 29, wherein the lifting member is configured to cause the second end of the pallet to move to a limited operation, so that the lifting is continuously performed. The retraction of the age will cause the second bonding plate member to be thinner by the first bonding plate member, and its sag is flanked by the plane. 31. An anodic bonding apparatus comprising: a member operable to interface with a first sheet of material, and providing at least one of controlled heating, voltage, and cooling; the panel member operable to interface with the second a sheet of material, and at least a controlled heating, voltage, and cooling thereof; and a separator member including a plurality of movable shim packs, the separator member coupled to the first-bonding plate The member, and the operability of the symmetry, is incorporated herein by reference to the first and second sheets of material and between the first and second sheets of material to prevent the peripheral edges of the first and second sheets of material from contacting each other. 32. According to the anodic bonding of claim 31, the first material sheet is at least one of a glass substrate and a glass ceramic substrate, and the second material sheet is a donor semiconductor wafer. 33. The anodic bonding apparatus according to claim 31, wherein the separating crying member is a garment-like structure and comprises: fixing the ground joint with respect to the first bonding plate member according to the mounting ring; and rotating the ring to rotate the ground In combination with the mounting ring, a plurality of shims assembly can be slidably coupled to the mounting ring such that it can be synchronously decorated into the space between the person and the /___ and the second material sheet in response to the rotation The forward and backward rotation of the ring 34. The anode bonding device according to claim 33, wherein: the square rotating ring comprises one or more cams at the peripheral edge thereof. Or a cam, which is connected to one or more cams of the rotating ring, such that when the rotating ring rotates, the shims assembly enters and/or leaves the space between the first and second sheets of material. 35. The anode bonding apparatus according to claim 34, wherein the spacer assembly rotating ring comprises a cam slit, each of which is thin and leaves the center of the spacer member. 36. According to the anodic bonding device of claim 31, the (4) splicing structure includes: bearing surfaces, each bearing surface defining a bearing plane to refer to one of the 纠n materials; and 59th Page 200811992 The divider member is operable to urge the shim assembly to move parallel to the bearing surface of the at least one first bonding plate member for insertion between or between the first and second sheets of material. The anodic bonding apparatus of claim 3, wherein the separator member is operable to move the lion: the plate is between the first and second materials to promote only in the central region of the first and second material sheets 38. According to the anodic bonding device of claim 37, wherein the separating crying member is operable to move the shims assembly away from the first and second material sheets = at the first and The second material 跋 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Extending, the hole of the first bonding plate member The electrode is operable to conduct the conductive material to the first material sheet. 40. The anode bonding apparatus according to claim 39, wherein the pre-negative plunger separator is operable to apply a bias voltage and shift one The material sheet is sinned in the central region of the second material sheet. = Anodically bonded device according to claim 40, wherein the device is operable to provide a seeding voltage to the first material. The sheet is bonded by the central region of the H-th material. 42. An anodic bonding apparatus comprising: the W-joining member can be used to bond the sheet of material and provide it :r limb control of heating, voltage, and cooling; the slab member is operable to engage an embossing device having a minute structure, and to provide at least one controlled heating, voltage, and cooling thereof. And a pressure member operatively coupled to the first and second bonding plate members and the first and second web members are oriented toward each other to achieve that the embossing device is controlled by the sheet of material along its respective face Pressure Tether system unit operable to generate a control signal to the first and second plate member and the pressure bonding member to provide a heating profile was sufficient to cause the material to flow into the relief # minor structural fixture. P. 61