TW200814341A - Thin film photovoltaic structure and fabrication - Google Patents

Thin film photovoltaic structure and fabrication Download PDF

Info

Publication number: TW200814341A
Authority: TW; Taiwan
Prior art keywords: layer; photovoltaic; semiconductor; insulator; wafer
Prior art date: 2006-05-31

Application number

TW096119237A

Other languages

English (en)

Chinese (zh)

Inventor

Francis Dawson-Elli David

Purushottam Gadkaree Kishor

Merchant Walton Robin

Original Assignee

Corning Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-05-31

Filing date

2007-05-29

Publication date

2008-03-16

2006-08-28 Priority claimed from US11/511,040 external-priority patent/US20070277874A1/en

2006-08-28 Priority claimed from US11/511,041 external-priority patent/US20070277875A1/en

2007-05-29 Application filed by Corning Inc filed Critical Corning Inc

2008-03-16 Publication of TW200814341A publication Critical patent/TW200814341A/zh

Links

238000004519 manufacturing process Methods 0.000 title abstract description 21
239000010409 thin film Substances 0.000 title description 4
239000004065 semiconductor Substances 0.000 claims abstract description 196
238000000034 method Methods 0.000 claims abstract description 125
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239000012212 insulator Substances 0.000 claims abstract description 78
239000013078 crystal Substances 0.000 claims abstract description 53
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229910001218 Gallium arsenide Inorganic materials 0.000 claims description 46
238000005468 ion implantation Methods 0.000 claims description 32
238000012545 processing Methods 0.000 claims description 22
150000002500 ions Chemical class 0.000 claims description 21
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238000012546 transfer Methods 0.000 claims description 16
238000000926 separation method Methods 0.000 claims description 14
238000005498 polishing Methods 0.000 claims description 12
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JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 44
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UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
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QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
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SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
150000002431 hydrogen Chemical class 0.000 description 2
238000002156 mixing Methods 0.000 description 2
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XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
240000002853 Nelumbo nucifera Species 0.000 description 1
235000006508 Nelumbo nucifera Nutrition 0.000 description 1
235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
206010029412 Nightmare Diseases 0.000 description 1
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238000009825 accumulation Methods 0.000 description 1
239000002253 acid Substances 0.000 description 1
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239000003513 alkali Substances 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
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239000003599 detergent Substances 0.000 description 1
JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
239000012153 distilled water Substances 0.000 description 1
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239000000835 fiber Substances 0.000 description 1
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239000007789 gas Substances 0.000 description 1
YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
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APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
238000003698 laser cutting Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
230000007774 longterm Effects 0.000 description 1
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229910052914 metal silicate Inorganic materials 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
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229910001453 nickel ion Inorganic materials 0.000 description 1
125000002524 organometallic group Chemical group 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
238000000059 patterning Methods 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000005240 physical vapour deposition Methods 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
239000002243 precursor Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000001953 recrystallisation Methods 0.000 description 1
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238000012827 research and development Methods 0.000 description 1
238000012552 review Methods 0.000 description 1
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
239000005368 silicate glass Substances 0.000 description 1
239000002002 slurry Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
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229910052902 vermiculite Inorganic materials 0.000 description 1
235000019354 vermiculite Nutrition 0.000 description 1
239000010455 vermiculite Substances 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Ceramic Engineering (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Geochemistry & Mineralogy (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Photovoltaic Devices (AREA)

TW096119237A 2006-05-31 2007-05-29 Thin film photovoltaic structure and fabrication TW200814341A (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US81006106P	2006-05-31	2006-05-31
US11/511,040 US20070277874A1 (en)	2006-05-31	2006-08-28	Thin film photovoltaic structure
US11/511,041 US20070277875A1 (en)	2006-05-31	2006-08-28	Thin film photovoltaic structure

Publications (1)

Publication Number	Publication Date
TW200814341A true TW200814341A (en)	2008-03-16

Family

ID=38801981

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW096119237A TW200814341A (en)	2006-05-31	2007-05-29	Thin film photovoltaic structure and fabrication

Country Status (5)

Country	Link
EP (1)	EP2022097A2 (de)
JP (1)	JP2009539255A (de)
KR (1)	KR20090028581A (de)
TW (1)	TW200814341A (de)
WO (1)	WO2007142865A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20080070340A1 (en) *	2006-09-14	2008-03-20	Nicholas Francis Borrelli	Image sensor using thin-film SOI
EP2075850A3 (de) *	2007-12-28	2011-08-24	Semiconductor Energy Laboratory Co, Ltd.	Photoelektrische Umwandlungsvorrichtung und Verfahren zu ihrer Herstellung
US7967936B2 (en)	2008-12-15	2011-06-28	Twin Creeks Technologies, Inc.	Methods of transferring a lamina to a receiver element
SG186005A1 (en) *	2009-03-20	2012-12-28	Intevac Inc	Advanced high efficiency crystalline solar cell fabrication method
US20100244108A1 (en) *	2009-03-31	2010-09-30	Glenn Eric Kohnke	Cmos image sensor on a semiconductor-on-insulator substrate and process for making same
TW201119019A (en) *	2009-04-30	2011-06-01	Corning Inc	CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same
US8749053B2 (en)	2009-06-23	2014-06-10	Intevac, Inc.	Plasma grid implant system for use in solar cell fabrications
CN103597614B (zh) *	2011-06-15	2017-03-01	3M创新有限公司	具有改善的转换效率的太阳能电池
MY175007A (en)	2011-11-08	2020-06-02	Intevac Inc	Substrate processing system and method
US9318332B2 (en)	2012-12-19	2016-04-19	Intevac, Inc.	Grid for plasma ion implant

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4152535A (en) *	1976-07-06	1979-05-01	The Boeing Company	Continuous process for fabricating solar cells and the product produced thereby
US5395481A (en) *	1993-10-18	1995-03-07	Regents Of The University Of California	Method for forming silicon on a glass substrate
JPH114008A (ja) *	1997-06-11	1999-01-06	Nippon Telegr & Teleph Corp <Ntt>	薄膜太陽電池の製造方法
US6306729B1 (en) *	1997-12-26	2001-10-23	Canon Kabushiki Kaisha	Semiconductor article and method of manufacturing the same
JP2000349264A (ja) *	1998-12-04	2000-12-15	Canon Inc	半導体ウエハの製造方法、使用方法および利用方法
US7176528B2 (en) *	2003-02-18	2007-02-13	Corning Incorporated	Glass-based SOI structures
JP4115859B2 (ja) *	2003-02-28	2008-07-09	株式会社日立製作所	陽極接合方法および電子装置
US7410883B2 (en) *	2005-04-13	2008-08-12	Corning Incorporated	Glass-based semiconductor on insulator structures and methods of making same

2007
- 2007-05-24 EP EP07809181A patent/EP2022097A2/de not_active Withdrawn
- 2007-05-24 KR KR1020087032241A patent/KR20090028581A/ko not_active Withdrawn
- 2007-05-24 JP JP2009513192A patent/JP2009539255A/ja not_active Abandoned
- 2007-05-24 WO PCT/US2007/012422 patent/WO2007142865A2/en not_active Ceased
- 2007-05-29 TW TW096119237A patent/TW200814341A/zh unknown

Also Published As

Publication number	Publication date
WO2007142865A3 (en)	2008-05-08
JP2009539255A (ja)	2009-11-12
WO2007142865A2 (en)	2007-12-13
KR20090028581A (ko)	2009-03-18
EP2022097A2 (de)	2009-02-11

Publication	Publication Date	Title
TW200814341A (en)	2008-03-16	Thin film photovoltaic structure and fabrication
US20070277875A1 (en)	2007-12-06	Thin film photovoltaic structure
CN101504957B (zh)	2013-05-22	包括薄层的光伏电池
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