TW200903701A - Vertical heat treating boat and heat treating method for semiconductor wafer - Google Patents

Vertical heat treating boat and heat treating method for semiconductor wafer Download PDF

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Publication number
TW200903701A
TW200903701A TW097107714A TW97107714A TW200903701A TW 200903701 A TW200903701 A TW 200903701A TW 097107714 A TW097107714 A TW 097107714A TW 97107714 A TW97107714 A TW 97107714A TW 200903701 A TW200903701 A TW 200903701A
Authority
TW
Taiwan
Prior art keywords
support
heat treatment
wafer
boat
flatness
Prior art date
Application number
TW097107714A
Other languages
English (en)
Chinese (zh)
Other versions
TWI376011B (2
Inventor
Takeshi Kobayashi
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200903701A publication Critical patent/TW200903701A/zh
Application granted granted Critical
Publication of TWI376011B publication Critical patent/TWI376011B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/127—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by the substrate support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW097107714A 2007-03-12 2008-03-05 Vertical heat treating boat and heat treating method for semiconductor wafer TW200903701A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007061632A JP5061663B2 (ja) 2007-03-12 2007-03-12 縦型熱処理用ボートおよび半導体ウエーハの熱処理方法

Publications (2)

Publication Number Publication Date
TW200903701A true TW200903701A (en) 2009-01-16
TWI376011B TWI376011B (2) 2012-11-01

Family

ID=39759230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107714A TW200903701A (en) 2007-03-12 2008-03-05 Vertical heat treating boat and heat treating method for semiconductor wafer

Country Status (6)

Country Link
US (1) US8003918B2 (2)
JP (1) JP5061663B2 (2)
KR (1) KR101396850B1 (2)
DE (1) DE112008000667B4 (2)
TW (1) TW200903701A (2)
WO (1) WO2008111286A1 (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5071217B2 (ja) * 2008-04-17 2012-11-14 信越半導体株式会社 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法
WO2011027823A1 (ja) * 2009-09-02 2011-03-10 本田技研工業株式会社 搬送ラック、金属リングの保持方法及び熱処理方法
US20170110353A1 (en) * 2015-10-20 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer boat, annealing tool and annealing method
JP6809601B2 (ja) * 2017-04-13 2021-01-06 株式会社ニコン 情報処理装置、プログラム、作業工程生成装置、および完成品の作成方法
US11521876B2 (en) * 2018-03-07 2022-12-06 Tokyo Electron Limited Horizontal substrate boat
EP4386819A1 (de) 2022-12-15 2024-06-19 Siltronic AG Verfahren zum testen der widerstandsfähigkeit von halbleiterscheiben aus einkristallinem silizium gegen thermisch induzierte versetzungen

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3328763B2 (ja) * 1995-10-30 2002-09-30 エヌティティエレクトロニクス株式会社 縦型ウエハボートのウエハ支持構造
JP3505934B2 (ja) * 1996-09-10 2004-03-15 東京エレクトロン株式会社 被処理体の支持構造及び熱処理装置
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP3692812B2 (ja) 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP2000150402A (ja) * 1998-11-09 2000-05-30 Shin Etsu Handotai Co Ltd 基板支持治具
JP2001168175A (ja) * 1999-12-07 2001-06-22 Semiconductor Leading Edge Technologies Inc 熱処理用基板保持具、基板熱処理装置および基板の熱処理方法
JP2002324830A (ja) * 2001-02-20 2002-11-08 Mitsubishi Electric Corp 基板熱処理用保持具、基板熱処理装置、半導体装置の製造方法、基板熱処理用保持具の製造方法及び基板熱処理用保持具の構造決定方法
JP4396105B2 (ja) * 2003-02-05 2010-01-13 信越半導体株式会社 縦型熱処理用ボート及び半導体ウエーハの熱処理方法
JP4857517B2 (ja) 2003-11-26 2012-01-18 信越半導体株式会社 アニールウエーハ及びアニールウエーハの製造方法
JP2005203648A (ja) 2004-01-19 2005-07-28 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理用縦型ボート及び熱処理方法
JP2006128316A (ja) * 2004-10-27 2006-05-18 Shin Etsu Handotai Co Ltd 熱処理用縦型ボートおよび熱処理方法

Also Published As

Publication number Publication date
KR101396850B1 (ko) 2014-05-20
KR20100014966A (ko) 2010-02-11
JP2008227056A (ja) 2008-09-25
WO2008111286A1 (ja) 2008-09-18
DE112008000667T5 (de) 2010-01-21
JP5061663B2 (ja) 2012-10-31
US8003918B2 (en) 2011-08-23
DE112008000667B4 (de) 2022-03-17
TWI376011B (2) 2012-11-01
US20100015817A1 (en) 2010-01-21

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