TW200908043A - Multi-layered ceramic electronic component - Google Patents

Multi-layered ceramic electronic component Download PDF

Info

Publication number
TW200908043A
TW200908043A TW097117399A TW97117399A TW200908043A TW 200908043 A TW200908043 A TW 200908043A TW 097117399 A TW097117399 A TW 097117399A TW 97117399 A TW97117399 A TW 97117399A TW 200908043 A TW200908043 A TW 200908043A
Authority
TW
Taiwan
Prior art keywords
ceramic
layer
electrode
laminated
region
Prior art date
Application number
TW097117399A
Other languages
Chinese (zh)
Other versions
TWI406309B (en
Inventor
Koji Suzuki
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of TW200908043A publication Critical patent/TW200908043A/en
Application granted granted Critical
Publication of TWI406309B publication Critical patent/TWI406309B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/232Terminals electrically connecting two or more layers of a stacked or rolled capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The invention provides a laminated ceramic electronic component which has high reliability to wet resistance even in a miniaturization condition. In a sintered ceramic body (10) including side gap portions arranged between sides of a first internal electrode (1) and a second internal electrode (2) and first and second side surfaces (21),(22) of the sintered ceramic body and between sides of the effective layer portion (3a) and the first and second side surfaces of the sintered ceramic body, regions of the side gap portions at least adjacent to the first and second internal electrodes are Mg-rich regions MR each having a Mg concentration greater than that of the effective layer portion. In addition, the side gap portions are integrally taken as Mg-rich regions.; In a side gap portion GE between the end portion of the effective layer portion and the first or second side surfaces (11), (12), the region at least adjacent to the first and second internal electrodes is taken as an Mg-rich region. Mg in the Mg-rich region is 0.5-1.0 mol% more than that in the effective layer portion.

Description

200908043 九、發明說明 【發明所屬之技術領域】 本發月係關於一種積層陶瓷電子零件,具體而言,係 關於將陶瓷層與電容形成用内部電極積層而成的積層陶瓷 電子零件。 【先前技術】 近年來,随著行動電話或可攜式音樂播放器等電子機 之j里化’所裝載之電子零件之小型化亦快速發展。例 如,以晶片型積層陶竟電容器為代表之晶片型積層陶究電 I零件中,為了確保既定特性並縮小晶片尺寸,陶竟層之 薄層化正在進展。 因此’因應陶:是層之薄層化,陶竟層之積層片數亦有 增加之趨勢。通常,積層陶 償臂闹无電子零件雖具有陶瓷層與内 部電極交互積層之槿ώ 一 構& 仁由於内部電極並未覆蓋全部陶 竟層而僅形成至由陶>用# u 文S之周緣部稍微後退之内側位置使 内部電極從晶片側面露出,+I + 路因此會在内部電極與陶瓷層之 間產生段差。因此,若陶珞爲 ) 陶是層之積層片數增加時,則容易 因該段差而產生剥層等構造缺陷。 解決此種問題之對第,Y f L 1 喂之對耒,例如已有提案一種方法,其係 將内部電極圖案印刷於陶眘去* 1剩於陶瓷未加工片上之後,於未印刷内 部電極圖案之部分印刷陶堯奮, 文貧 稭由S亥陶瓷膏來吸收段差 (參照專利文獻1)。 然而’在δ亥方法之,嘻、 月况下’即使可吸收陶瓷層與内部 電極間之段差’但在煻w本 疋成時因内部電極與陶瓷層之燒結收 5 200908043 陶兗層之間產生微細 引起耐濕不良的問題 縮行為的差異,會在内部電極端部與 之間隙,而有濕氣等水分滲入該間隙 ^卜,與該專利文獻丨相關之技術,亦有提案一種方 係將s1〇2添加於段差吸收用陶瓷膏,以縮小陶竟盥 内部電極之燒結收縮行為的差(參照專利文獻2卜 ” 然而’即使是該專利文獻2之古、、i * # . p. 方去,要使陶瓷與内部 電極兩者之燒結收縮行為完全一致係極為困 該間隙所產生之_不良問題尚未得到 、'上因 又,由於段差吸收部分最接近晶片之::面,因此在 燒成步驟中熱容易傳導W於燒結下,因叫之添加使燒 結溫部進-步降低,而有錢面侧間隙部過度燒* 成電容器本體之構造缺陷或強度降低的問題點。 & 此外,亦有提案—種解決段差問題之方法,其係將Cu ⑼於段差吸’將屬内部電極材料之犯盘陶 竞貧中之Cu纟金化,以提高内部電極與段差吸收層之 合性(參照專利文獻3)。 然而,在該專利文獻3之方法的情況下,由於犯與W 之:金會因燒成環境氣氛等容易產生氧化還原反應,由於 在氧化反應之體積膨脹後,會產生因還原反應之體積縮 小’而在段差部產生間陽:,因此實際上難以充分確保對 濕性之可靠性。 、 專利文獻1 ’日本特開昭56—94719號公報 專利文獻2 :曰本特開2〇〇4_ 96〇1〇號公報 200908043 專利文獻3:日本特開2〇〇5— 1〇ΐ3〇ι號公報 【發明内容】 本發明係用以解決上述課題,目的在於提供一種即使 在小型化之情況下亦對耐濕性之可靠度高的積層陶竟 零件。 為了解決上述課題’本發明(中請專利範圍第i項)之 積層陶£電子零件,係具m燒結體,係複數個陶究 層所積層而成,具有彼此才日剩_ a 淘攸此相對向之第1側面及第2側面、 及彼此相對向之第1端面及第2端面·,第U部電極,传 形成於該陶:是燒結體内部並引出至該第!端面且含有Ni: 第2内部電極,係於該陶:是燒結體内部形成為透過 该:免層與該帛i内部電極相對向,並引出至該第2端面 ^有Nl;第1外部端子電極,係形成於該陶究燒結體之 ㈣1端面’並與㈣i㈣電極電氣連接;以及第 部端子電極,係形成於該陶究燒結體之㈣2端 該第2内部電極電氣連接,且連接於與該第㈠卜部端子^ =不同之電位’其特徵在於:該陶竟燒結體包含:該陶】 層之中挾持於該第丨内部電極及該第2内部電 是 形成電容的有效層部;以及存在於該第2、第2内^ 之側部與該陶究燒結體之第!、帛2側面之間 極 層部之側部與該陶兗燒結體之第2侧面之間二則: 側間隙部,使該側面側間隙部之中至少與該第1 、 !面 部電極鄰接之區域為Mg濃度高 .、^ 、第2内 區域。 门於4有效層部的富含Mg 200908043 於與:第好係使該側面側間隙部之中分別位 區域。 内部電極相同高度之區域為該富含Mg 含μΓ區:發明中,最好係使該側面側間隙部整體為該富 !、第又2内本/明令’較佳為該陶竟燒結體包含存在於該第 邛電極之端部與該陶瓷燒結體之第1、第 =二該有效層部之端部與該陶究燒結體之第i或:面 二二的端面:間隙部;使該端面側間隙部之中至少與 :立 2内部電極鄰接之區域為]vtg濃度高於該:: 層4的富含Mg區域。 μ有效 本《明中,亦可使該第1、帛2内部電極之中較 曰之内部電極外側之陶瓷層之該侧面侧間隙部之垂 史影區域及該端面侧間隙部之垂直投影區域的至少 Μ§濃度高於該有效層部的富含Mg區域。 ’、、、 本發月中,較佳為使構成該富含Mg區域之陶咨 =料之主成分⑽添加比例,相較於構成今 層部之陶究材料之主成分為W添加比例 多 0.5〜1.0 m〇i〇/。。 列 又,本發明中,亦可設為該富含Mg區域巾Mg濃卢 -有從陶£燒結體之外侧向内側降低之濃度梯度的構成。 本毛明(中%專利範圍第i項)之積層陶竟電子零件, 如=上所述’係具備陶竟燒結體、形成於陶竟燒結體内部 之第1及S 2内部電極、與第i内部電極電氣連接之第1 200908043 外部端子電極、及與第2内部電 电徑冤軋連接之第2外部端 電極,由於使存在於陶竟燒結體之第工内部電極及第2 内部電極之側部與陶瓷燒結體 第2側面之間、及 層部之側部與嶋結體之第1、第2側面之間的側 ,Λ 芏少一弟^第2内部電極鄰接之區域 為Mg濃度面於有效層部的富含⑽域,因此於内部電 極與側面側間隙部之邊界部, 、 生成構成内部電極之金屬之 ?、源自陶曼之金屬元素之Mg的氧化化合物由於藉由 ;乳:化,物來填充内部電極與侧面側間隙部之邊界部間 邱、’精由該乳化化合物來結合内部電極與側面側間隙 ^因此可提升耐濕性。此外,由於藉由因氧化化合物生 成之體積膨脹,增大内部電極與侧面側間隙 間隙的填充效果,因此該點亦可期待㈣性之大幅提升。 本^中’關於富含Mg區域之「Mg濃度高於有效層 二在有效層部含有Mg之情況下,富纟Mg區域 =於有效層部之Mg含有率之比例含有%的概念,又, 、層部未含Mg之情況下,係指包含有顯著程度之Mg :生成構成内部電極之金屬之犯與Mg之敦化化合物的概 *公 ° 此外,在使用將Mg0添加於如以〇3者作 陶瓷材料的情況下,係以富含 , 田s Mg區域南於該有效層部 源自MgO之Mg的含有率來含有為要件。 又,本發明之積層陶究電子零件中, 之中,分別位於與第卜第2内部電極相同高度之區^ 200908043 亦即内部電極之側邊部為富八 之周邊部與側面側間隙部田3 區域,藉此於内部電極 金屬之Ni與源自陶瓷之金之邊界部,生成構成内部電極之 可謀求耐濕性之提升。 屬7L素之Mg的氧化化合物,即 又,在使該側面側間隙 下,即可防止因内部電極孰°體為富含Mg區域之情況 耐濕性的劣化,以更^ 面侧間隙部之間隙所造成之 零件。 彳于耐濕性優異之積層陶瓷電子 / 又,使存在於有效層却a 第2端面之間之端面側間隙:之:與陶: 部電極鄰接之區域為富含 ^與苐〗、第2内 水分從端面滲入,以進g:域’藉此亦可抑制、防止 ^步提升耐濕性。 此外’由於在端面亦形成外部端 端子電極獲得抑制水分渗人料’而藉由外部 人 效果’因此不須特Λ丨*^恶6 3 Mg區域於端面側之 特別叹置畜200908043 IX. Description of the Invention [Technical Field] The present invention relates to a laminated ceramic electronic component, and more specifically to a laminated ceramic electronic component in which a ceramic layer and an internal electrode for capacitor formation are laminated. [Prior Art] In recent years, miniaturization of electronic components mounted by electronic devices such as mobile phones and portable music players has also rapidly progressed. For example, in a wafer-type laminated ceramic device represented by a wafer type multilayer ceramic capacitor, in order to secure a predetermined characteristic and reduce the size of the wafer, the thinning of the ceramic layer is progressing. Therefore, in response to the Tao: the thin layer of the layer, the number of layers of the ceramic layer has also increased. Usually, the laminated ceramics have no electronic parts, although the ceramic layer and the internal electrodes are alternately laminated. The structure &ren; because the internal electrodes do not cover all the ceramic layers, but only formed by the pottery > The inner side of the peripheral portion is slightly retracted so that the internal electrode is exposed from the side surface of the wafer, and the +I + path thus causes a step difference between the internal electrode and the ceramic layer. Therefore, if the number of sheets of the layer is increased, it is easy to cause structural defects such as peeling due to the step. To solve this problem, the Y f L 1 feed is confronted. For example, there has been proposed a method of printing the internal electrode pattern on the ceramic unprocessed sheet after the internal electrode pattern is printed on the ceramic unprocessed sheet. Part of the pattern is printed by Tao Yufen, and the poor stalk is absorbed by the Shai ceramic paste (see Patent Document 1). However, in the δ Hai method, 嘻, month conditions, even if the difference between the absorbable ceramic layer and the internal electrode is small, but the internal electrode and the ceramic layer are sintered during the 煻w 疋 疋 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 The difference in the shrinkage behavior caused by the fineness of the moisture-resistant defect causes a gap between the ends of the internal electrodes, and moisture such as moisture penetrates into the gap. The technique related to the patent document also proposes a method. S1〇2 is added to the ceramic paste for phase difference absorption to reduce the difference in sintering shrinkage behavior of the internal electrodes of the ceramics (refer to Patent Document 2). However, even the patent document 2 is ancient, i*#. p. In order to make the sintering shrinkage behavior of both the ceramic and the internal electrode completely consistent, the gap caused by the gap is not obtained, and the upper part of the absorption is closest to the wafer:: In the firing step, heat is easily conducted under sintering, and the addition of the sintering temperature portion is further reduced, and the rich side surface portion is excessively burned* into a problem of structural defects or strength reduction of the capacitor body. Mp; In addition, there is also a proposal - a method to solve the step difference problem, which is to increase the internal electrode and the step absorption layer by Cu (9) in the step-by-step absorption of the internal electrode material. In the case of the method of Patent Document 3, in the case of the method of Patent Document 3, the gold is likely to generate an oxidation-reduction reaction due to the firing atmosphere, etc., due to the volume expansion in the oxidation reaction. After that, the volume of the reduction reaction is reduced, and the smear is generated in the step portion. Therefore, it is difficult to sufficiently ensure the reliability of the wetness. Patent Document 1 Japanese Patent Laid-Open No. Hei 56-94719 Patent Literature 2曰 特 〇〇 〇〇 〇〇 _ _ _ 2009 2009 2009 080 2009 2009 080 080 080 080 080 080 080 080 080 080 080 080 2009 080 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 【 【 【 【 【 Provided is a laminated ceramic component having high reliability against moisture resistance even in the case of miniaturization. In order to solve the above problem, the laminated body of the present invention (the i-th item of the patent range) burn The body is made up of a plurality of layers of ceramics, and has a mutual _ a 攸 a first side and a second side opposite to each other, and a first end and a second end opposite to each other. The part electrode is formed in the pottery: the inside of the sintered body and is led out to the first end surface and contains Ni: the second internal electrode is formed in the pottery: the inside of the sintered body is formed to transmit through: the layer and the inside of the crucible The electrode is opposed to the second end surface and has a N1; the first external terminal electrode is formed on the (four) 1 end surface of the ceramic sintered body and electrically connected to the (iv) i (four) electrode; and the first terminal electrode is formed in the electrode The second internal electrode of the (4) 2 end of the ceramic sintered body is electrically connected, and is connected to a potential different from the first (a) terminal portion ^=, wherein the ceramic sintered body comprises: the ceramic layer is held in the layer The second internal electrode and the second internal electricity are effective layer portions for forming a capacitance; and the side portions of the second and second inner portions and the ceramic sintered body are present! Between the side faces of the crucible 2 and the second side of the ceramic sintered body, the side gap portion is such that at least the first side is formed in the side gap portion. The region adjacent to the surface electrode has a high Mg concentration, a ^, and a second inner region. The door is rich in Mg 200908043 in the effective layer portion of the 4th layer and is preferably located in the lateral side gap portion. The region of the same height of the internal electrode is the Mg-rich region containing the μ: in the invention, it is preferable that the side-side gap portion as a whole is rich; and the second and second inner portions are preferably the ceramic sintered body. The end portion of the second electrode and the end portion of the first and second effective portions of the ceramic sintered body and the end surface of the i-th or the second surface of the ceramic sintered body: a gap portion; At least the region adjacent to the vertical electrode of the vertical side of the end face side gap portion has a concentration of vtg higher than that of the :: Mg-rich region of the layer 4. In the present invention, the vertical shadow region of the side gap portion of the ceramic layer on the outer side of the inner electrode of the first and second inner electrodes may be made At least the concentration is higher than the Mg-rich region of the active layer. In the present month, it is preferable to increase the proportion of the main component (10) constituting the Mg-rich region, and to add more proportion to the main component of the ceramic material constituting the present layer. 0.5~1.0 m〇i〇/. . Further, in the present invention, it is also possible to adopt a configuration in which the Mg-rich region-containing towel Mg-rich has a concentration gradient which decreases from the outer side to the inner side of the ceramic sintered body. The first layer of the first and the second internal electrodes formed in the interior of the ceramic body, and the first part of the ceramics, such as the above-mentioned i. The first terminal electrode of the internal electrode electrical connection is the external terminal electrode and the second external terminal electrode which is connected to the second internal electric path, and is present in the inner internal electrode and the second inner electrode of the ceramic sintered body. The side between the side portion and the second side surface of the ceramic sintered body, and the side between the side portion of the layer portion and the first and second side faces of the bismuth body, the area adjacent to the second internal electrode is Mg concentration Since the surface of the active layer is rich in the (10) domain, the oxidized compound of Mg which is a metal element constituting the internal electrode and the metal element of the Tauman is formed at the boundary portion between the internal electrode and the side surface gap portion; The milk is formed to fill the boundary between the internal electrode and the side-side gap portion, and the internal electrode and the side surface gap are combined by the emulsified compound, so that the moisture resistance can be improved. Further, since the filling effect of the gap between the internal electrode and the side surface is increased by the volume expansion due to the oxidized compound, it is expected that the (four) property is greatly improved. In the case where the Mg concentration in the Mg-rich region is higher than the effective layer 2 and the Mg is contained in the effective layer portion, the Mg-rich region = the ratio of the Mg content in the effective layer portion contains %, and In the case where the layer does not contain Mg, it means that Mg is contained to a significant extent: the generation of the metal constituting the internal electrode and the compound of Mg. In addition, the use of Mg0 is added to In the case of a ceramic material, it is contained in the content of Mg which is rich in the area of the Mg region and the Mg layer of the active layer is derived from MgO. In the region of the same height as the second inner electrode of the second inner electrode, 200908043, that is, the side portion of the inner electrode is a region of the peripheral portion of the rich eight and the side gap portion 3, whereby the Ni of the internal electrode metal and the ceramic are derived from In the boundary portion of the gold, the internal electrode is formed to improve the moisture resistance. The oxidized compound belonging to 7L of Mg, that is, the side electrode side gap can prevent the internal electrode from being rich. Deterioration of moisture resistance in the case of a Mg-containing region, Further, the part caused by the gap of the surface side gap portion. The laminated ceramic electrons which are excellent in moisture resistance, and the end surface side gap which exists between the second end faces of the effective layer a: The adjacent region is rich in ^ and 苐, and the second inner moisture is infiltrated from the end surface to enter the g: domain', thereby suppressing and preventing the moisture resistance from being improved. Further, since the external terminal electrode is formed at the end surface Obtaining the effect of suppressing the infiltration of water by the 'human effect', so there is no need to special *^ 6 6 Mg area on the end side of the special sigh

.,. 障形亦不少,但藉由將富含Μσ F 域亦5又於端面側,則可進-步提升耐濕可靠性。Κ 又’本發明中,亦可使第 里^ “ 弟1第2内部電極之中敕a ;於取外層之内部電極外側之陶究層之側面側間二: 直投影區域及端面側間隙部之垂直投影區域的至小jThere are also many obstacles, but by adding the Μσ F domain to the end face side, the moisture resistance reliability can be further improved. Κ In the present invention, it is also possible to make 第a among the second internal electrodes of the first and second brothers; and between the side faces of the ceramic layer on the outer side of the inner electrode of the outer layer: a straight projection region and an end surface side gap portion. The vertical projection area of the small j

Mg濃度高於有效層部的富含Mg區域,在該情況^為 確實製得耐濕性優異之積層陶瓷電子零件。/ ,可更 又,使構成富含Mg區域之陶瓷材料之主 lOOmol%的Mg添加比例,相較於構成刀為 ,, β双™崢之陶瓷;M· 料之主成分為l〇〇m〇1%的Mg添加比例 !·〇 m〇i〇/〇 , 10 200908043 藉此可更確霄提高耐濕可靠性,使本發明更具實效。 又’本發明中,在富含Mg區域中使Mg濃度具有從 陶€燒結體之外側向内側降低的濃度梯度之構成的情況 下,亦可製得耐濕性優異之積層陶瓷電子零件。 t外,使Mg濃度具有從陶瓷燒結體之外側向内側降 =濃度梯度之構成的方法,係例示將燒成前之原始晶片 /又’貝方、3有Mg之黏結劑,在含浸Mg後將原始晶片加以 燒成之方法等。 /" 【實施方式】 、下表示本發明之實施形態並進一步詳細說明本發 明特徵之處。 " [實施形態1 ] 圖1係表示本發明一實施形態之積層陶瓷電子零件(本 霄施形態中係積層陶瓷電容器)之構成的立體圖,圖2係圖 1之A—A線截面圖,圖3係圖1之8_6線截面圖,圖4 係用以說明本發明實施形態丨之積層陶瓷電容器之構成的 圖。 本實施形態1之積層陶瓷電容器,如圖1〜4所示,係 具備複數個陶瓷層3所積層之陶瓷燒結體丨〇、以交互引出 至相反側之方式配置於其内部的第1及第2内部電極〗,2、 及以與第1及第2内部電極丨,2之引出部導通之方式配設 於陶瓷燒結體ίο彼此相對向之第丨端面丨丨與第2端面12 的第1及第2外部端子電極31,32。 右進一步洋細說明,陶瓷燒結體丨〇具有彼此相對向之 200908043 第1側面21及第2側面22(圖卜 第1端面U及第2端面12(圖 、與彼此相對向之 圖3所示,配置有弓丨出至第!端面部則如圖2、 部電極1、及透過既定陶兗層(有助於开二:之第1内 層卜於陶竟燒結體心㈣置#7;^容之介電體 向,並引出至第2端面12 邛電極1相對 ® U且含有Nl之第2 又,於陶莞燒結體10之第】端面Π,如圖】 不,配置有與第1内部電極i電氣連接的當圖2所 極3卜於陶竟燒結體1〇之第2端面12,_^端子電 部電極2電氣連接且連接於與第!外部端子電極、第2内 電位的第2外部端子電極32。 子電極3i不同 又’此積層陶瓷雷突哭士 盗中,陶瓷燒結體1〇,1门 圖4所示,包含陶竟層3之中挟持 圖3、 2内部電極2且有助於形成電容的有效層ΓΓ;1及第 1内部電…第2内部電極2之側部:、:在於第 第】、第2側面21,22之間、及有效層部3堯側;體10之 燒結體1〇之第i、第2侧面 側錢陶竟 存在於第i内部電極i及第 的侧面側間隙部Gs、 結體i。之第卜第2端面",12之間、及;;::陶竟燒 端部與陶竟燒結體1。之第i或第2端面U,:層… 面側間隙部ge。 之間的立而 此外’陶瓷燒結體J 〇, 内部電極i⑵及如圖3所不’係、於較最上層之 1(2)及取下層之内部電極1(2)的外 形成電容無關之陶竟層的外 、、備有與 12 200908043 接著,該側面側間隙部及姓而办… ^ f 1 h及柒面側間隙部ge之中, 弟1、弟2内部電極〗,2鄰接之 〇 / E, ., 4 Gs!(圖 3、圖 4)、 E〗(圖4),係設成Mg濃度較有效 敁Λ/Γ 曰1 j a冋之畜含Mg區 A MR’且Mg係擴及間隙部整體大致均勻分布。 此外,本實施形態〗中,雖僅 致均Y雖使Mg擴及間隙部整體大 3习刀布,但Mg並益須一定撼B p日, 八右 …、貝疋擴及間隙部整體大致均勻 刀邓,只要Mg存在於間隙部之内部 丨电極附近部分即可。The Mg concentration is higher than the Mg-rich region of the active layer portion, and in this case, it is sure to obtain a laminated ceramic electronic component excellent in moisture resistance. / , and further, the proportion of Mg added to the main lOOmol% of the ceramic material rich in the Mg region is compared with that of the constituent knives, the ceramic of the β double TM ;; the main component of the M material is l 〇〇 m 〇1% Mg addition ratio!·〇m〇i〇/〇, 10 200908043 Thereby, the moisture resistance reliability can be more improved, and the present invention is more effective. Further, in the present invention, in the case where the Mg concentration has a concentration gradient which decreases from the outer side to the inner side of the sintered body in the Mg-rich region, a laminated ceramic electronic component excellent in moisture resistance can be obtained. In addition, a method in which the Mg concentration has a composition from the outer side to the inner side of the ceramic sintered body = concentration gradient is exemplified by the original wafer before firing, and the adhesive of 'Bebe, 3 and Mg, after impregnating Mg A method of firing an original wafer or the like. [Embodiment] The following describes the embodiments of the present invention and further details the features of the present invention. [Embodiment 1] Fig. 1 is a perspective view showing a configuration of a laminated ceramic electronic component according to an embodiment of the present invention (a laminated ceramic capacitor in the present embodiment), and Fig. 2 is a cross-sectional view taken along line A-A of Fig. 1. Fig. 3 is a sectional view taken along line 8-6 of Fig. 1, and Fig. 4 is a view for explaining the configuration of a multilayer ceramic capacitor according to an embodiment of the present invention. As shown in FIGS. 1 to 4, the multilayer ceramic capacitor of the first embodiment is a ceramic sintered body having a plurality of layers of ceramic layers 3, and is first and secondly disposed so as to be alternately drawn to the opposite side. 2, the internal electrodes 〖, 2, and the first and second internal electrodes 丨, 2 lead portions are connected to the ceramic sintered body ίο the first end face 丨丨 and the second end face 12 of the first And second external terminal electrodes 31, 32. Further, the ceramic sintered body 丨〇 has a first side surface 21 and a second side surface 22 opposite to each other (the first end surface U and the second end surface 12) (Fig. 3, which are opposite to each other) The configuration has a bow to the front end of the face, as shown in Figure 2, the electrode 1, and through the established pottery layer (helping to open the second: the first inner layer is in the ceramics sintered body (four) set #7; ^ The dielectric body is led to the second end face 12, the electrode 1 is opposite to the U U and contains the second N1, and the first end face of the ceramics sintered body 10, as shown in the figure, no, the first and the first The second electrode 12 of the ceramic electrode 1 is electrically connected to the second electrode 12 of the ceramic sintered body 1 , and the terminal electrical electrode 2 is electrically connected to the external terminal electrode and the second internal potential. The second external terminal electrode 32. The sub-electrode 3i is different and the laminated ceramic thunder is crying, the ceramic sintered body is 1 〇, and the door is shown in Fig. 4, and the internal electrode of Fig. 3 and 2 is contained in the ceramic layer 3 2, and contribute to the formation of an effective layer of capacitance; 1 and the first internal electric ... the side of the second internal electrode 2:: in the first], the second side 21, 22 The i-th and the second side-side side of the sintered body 1 of the body 10 are present in the i-th internal electrode i and the first side-side gap portion Gs and the junction i. Between the second end face ", 12, and;;:: the ceramic burning end and the ceramic sintered body 1. The i- or second end face U, the layer... the face-side gap portion ge. In addition, the 'ceramic sintered body J 〇, the internal electrode i (2) and the outer layer 1 (2) of the uppermost layer and the outer electrode 1 (2) of the lower layer are not related to the external capacitance of the ceramic layer. Outside, and with 12 200908043 Next, the side-side gap and the surname... ^ f 1 h and the side-side gap ge, the brother 1, the second internal electrode, 2 adjacent 〇 / E , . , 4 Gs! (Fig. 3, Fig. 4), E (Fig. 4), set to Mg concentration more effective 敁Λ / Γ 1 ja 冋 animal containing Mg area A MR ' and Mg system expansion and clearance In the present embodiment, although only the average Y is made to enlarge the gap between the Mg and the gap portion, the Mg is more than pB p, eight right..., Bellow The expansion and the gap are generally uniform As long as Mg exists in the vicinity of the internal electrode of the gap portion.

Mg亦可如本實施形態丨之情 , 以到達陶瓷燒結體 :之方式分布於間隙部整體’或以偏折至間隙部 電極附近部分的方式分布。 此外,本實施形態1中,構成有效 係使用又人λ 巧欢瑨邛h之陶瓷材料 之用不含Mg之材料,構成富 使用釦祖 Mg區域MR之材料,係 用相對於構成有效層部3a之陶瓷 10〇m〇1〇/ ^ Λ j趸材枓其主要成分為 。、在O.H.Omom之範圍添加Mg之陶㈣料。 於在2㈣態1之積層陶Μ容器中,如以上所述,由 仕側面側間隙部G及端面側間隙 第9咖Α 1?、α| 之中’將與第1、 内4電極1, 2鄰接之區域GS1、G ,π # 有致層邱1 一 ,没成Mg濃度較 部電:之畐含Mg區域MR,因此在第卜第2内 :U2與由與其鄰接之陶竟構成之區域、及&的 :屬會:成構成内部電…之金屬之糾與源自陶 主屬几素之Mg的氧化化合物,藉由兮& 填充肉μ $ 稭由该虱化化合物來 内4電極1,2與區域GS1及〇Ε1之邊見加 照圖n —丄 E1之邊界部的間隙C(參 )’且错由該氧化化合物來結合内部 GS1 « p 門。丨電極1,2與區域 1 4 GEl,因此可製得具備高耐濕性且 13 1 使在小型化之情 200908043 況下亦對耐濕性之可靠度高的積層陶瓷電容器。 其次,針對該積層陶竟電容器之製造方法作說明。 ⑴貫先,準備以介電體陶究為主要成分之"未加工 片3有Nl&末作為導電材料之内部電極用導電性 及外部端子電極用導電性膏。 於陶兗未加工片或各種導電性膏雖包含黏結劑及溶 劑,但可使用公知之有機黏結劑或有機溶劑。 (2)接著,如圖6(a)所示,於陶瓷未加工片4丨上,藉 由例如網版印刷等將導電性f 42印刷成島狀,以形成内曰 部電極圖案42p ^ (3)接著,如圖6(b)所示,於陶瓷未加工片4ι上未形 成内部電極圖案42p之部分,印刷側面侧間隙部Gs及端面 側間隙部GE用之陶究膏43。 構成該陶瓷膏之陶瓷材料,係使用採用Mg之含有率 較構成作為基底之陶瓷未加工片41之陶瓷材料高的陶曼 材料者。 此外,在使Mg傾斜分布於間隙部之情況下,可使用 例如準備Mg含有率不同之複數種陶瓷膏,相鄰接依序印 刷之方法等。 (4)其次’如圖6(b)所示,將陶瓷未加工片41 一邊沿 長度方向交互錯開既定距離一邊加以積層,以製作母塊。 此外,於最外層係積層未形成内部電極圖案之外層用未加 工片。 此外,母塊可視須要藉由均壓法等方法沿積層方向廢 14 200908043 接。 (5) 其次,沿既定切割線L將母塊切割成既定尺寸以切 原。μ片(參知、圖6(c))。此外,圖6(c)中為了方便係 ^出1片陶瓷未加工片來表示切割線L。此外,視須要亦 σ、滚筒磨光等方法來研磨原始晶片,使原始晶片之棱線 部及角部帶圓角。 (6) 其次,將原始晶片(原始陶兗積層體)加以燒成。燒 度以9〇0〜13,C較佳。燒成環境氣氛可適當分別使 用大氧、N2等環境氣氛。 ()’、人冑導電性膏塗布於經燒成之陶瓷積層體的兩 :二加以培烤以形成外部端子電極。培烤溫度以7〇〇〜_ C較佳。焙烤環境氣氛 氛。 、田刀別使用大乳、N2等環境氣 ” m見須要亦可於外部端子電極表面,形成以提升 ⑨十夢此祕或提升焊料附純為目的之錢敷膜。 精此,即可製得具有如圖丨〜4 容器。 ’、構成之積層陶瓷電 在本實施形態、!之積層陶究電容器 使用構成陶瓷未加工片“ °, 於不 材料,以作為之材料而使用Mg含有率較高 < 丁十以作為側面側間隙部r n ^ ^ 竟膏,因此如圖3、圖、戶^端面側間隙…之陶 間隙部GE之中,位於與第'不’側面侧間隙部端面侧 度位置之區域所含之、=及第:内部電極…同高 g的濃度係咼於並他陶害邱八,士 層部3a等)所含之乂 ”他陶“刀(有效 晨&,藉由構成内部電極丨,2之 15 200908043 川與該Mg之氧化化合物來填充内部電極2㈣域^ MEI之邊界部㈣隙c(參關5),且藉由料化化合: ,結合内部電極i,2與區域Gsj ^,因此可製得具備 南耐濕性的積層陶瓷電容器。 此外,由於在陶竞層彼此間可產生構成成分之若干擴 政,因此側面側間隙部Gs、端面側間隙部 心 =之區域〜彼此、區域Gei彼此所挟持之部g 浪度亦可能稍微變高。 s 又’陶究中之Mg雖能以Mg〇等之形態存在,亦可以 ^峋氧化物等之化合物的狀態存在。然而,玻璃成分 ◦ §則不佳田。、此係因若側面側間隙部Gs、端面側間隙部 E之破璃量增加時,則側面側間隙部A、端面側間隙 :燒結溫度會降低,由於原來熱即容易傳導至位於 日曰月卜表面附近之側面側間隙邮r _“側間隙部Gs、端面= 而有導致電…: E會變成過度燒結, 導致電4本體之構造缺陷或強度降低的顧岸。 且雕富含Mg區域MKMg含有率,如以上所述, :二而…相對於陶刪之主要成分為1〇〇· 之添加比例以較有效層部3〇0.5〜L〇m〇1%較佳。 陶究U本發明之構成’雖亦可考慮將構成電容器本體之 植成時二3 ^ Mg濃度普遍提高,但若變更有效層部之 度Γ生等^有無法獲得㈣之電容器特性(介電係數、溫 G、沪而1慮’因此珉好如本發明般使側面側間隙部 Gs &面側間隙部Ge含有更多之Mg。 16 200908043 卜本發明之積層陶瓷電子零件中,陶瓷層可使用 以 BaTiO,、丁;八 1(^>3、SrTi〇3、及CaZr03等為主成分之介 一" 方可使用將Μη化合物、Fe化合物、Cr化 合物、Co化合舶j、Ώ 、τ. 勿及Νι化合物等副成分添加於該等主成 分者。 取 本發明之積層陶瓷電子零件中,陶瓷層之厚度以 1〜10 # m較佳。 本發月中,係以内部電極包含Ni為要件。具體而 言,係以包含金屬之Ni、Ni〇等之Ni化合物、或川合金 等為要件。内部電極之厚度以1〜1〇^m較佳。 又,本發明中,係以將外部端子電極設為具備基底電 極=於其上形成鍍敷層之複數層構造較佳。外部端子電極 通常雖係以從端面繞入主面及側面之方式所形成,但只要 至少形成於端面亦可。 構成外部端子電極之基底電極,可使用&、州、^、 及Ag-Pd等金屬。基底電極以含玻璃較佳。 /卜部端子電極之鍍敷層,在積層陶竟電子零件為焊接 構裝之情況下,以㈣鍍Ni層、鍍Sn層之2層構造較佳。 在精由導電性接著劑或打線構裝之積層陶£電子零件的情 況下’以採用鍍Ni層、鍍Au層之2層構造較佳。又,在 電容器為埋入樹腊基板的情況下,較佳為以鑛^層來構 成取外層。敷鍍層並無須-定為2層,1層或3層以上皆 可。又,«層每一層之厚度卩!m較佳。又,在 基底電極與锻敷層之間,亦可形成缓和應力用之樹脂層。 17 200908043 此外,本發明係著重於内部電極所含之Ni與陶瓷所含 之Mg之反應的發明,只要是可設為本發明特有之構成, 且可期待作用效果者,則不限於積層陶瓷電容器,亦可應 用於積層熱敏電阻、及積層電感器等。 [實施形態2] 圖7係表示本發明其他實施形態(實施形態2)之積層陶 瓷電子零件(本實施形態中係積層陶瓷電容器)之要部構成 的截面圖’係相當於實施形態i之B—B線截面圖的圖, 圖8係用以說明本發明實施形態2之積層陶瓷電容器之構 成的圖。 本實施形態2之積層陶瓷電容器,如圖7及圖8所示, 係將側面側間隙部Gs設為富含Mg區域Mr,且亦將内部 電極之中較最外層之内部電極外側之陶瓷層(外層)3b之側 面側間隙部Gs的垂直投影區域13b設為富含Mg區域Mr。 此外,本貫施形態2之積層陶瓷電容器之情形,富含As in the present embodiment, Mg may be distributed so as to be distributed over the entire gap portion or to the portion near the electrode of the gap portion so as to reach the ceramic sintered body. Further, in the first embodiment, the material which does not contain Mg is used for the ceramic material which is used in an effective manner, and the material which is rich in the Mg region MR is used as the material for the effective layer portion. 3a ceramic 10〇m〇1〇/ ^ Λ j 趸 枓 its main component is. Add Mg (four) material in the range of O.H.Omom. In the multilayer ceramic pot container of the 2 (four) state 1, as described above, the side surface side gap portion G and the end surface side gap 9th coffee pot 1?, α| are the same as the first and inner 4 electrodes 1 2 Adjacent area GS1, G, π # has a layer of Qiu 1 one, does not become a Mg concentration compared to the part of the electricity: the 畐 contains the Mg area MR, so in the second 2: U2 and the area adjacent to the Tao And &: genus: the formation of the internal electricity ... the metal of the oxidized compound derived from the genus of the genus of the genus of the genus, by the 兮 & filling the meat μ $ straw from the bismuth compound The edges of the electrodes 1, 2 and the regions GS1 and 〇Ε1 are shown in the gap C (reference) of the boundary of the n-丄E1, and the oxidized compound is combined with the internal GS1 «p gate. Since the electrodes 1 and 2 and the region 1 4 GE1 are used, it is possible to obtain a multilayer ceramic capacitor having high moisture resistance and high reliability against moisture resistance in the case of miniaturization in 200908043. Next, a description will be given of a method of manufacturing the laminated ceramic capacitor. (1) In advance, the unprocessed sheet 3 containing the dielectric ceramics as the main component has Nl & a conductive paste for internal electrodes as a conductive material and a conductive paste for external terminal electrodes. The unprocessed sheet or various conductive pastes of the ceramics contain a binder and a solvent, but a known organic binder or an organic solvent can be used. (2) Next, as shown in Fig. 6(a), the conductive f 42 is printed on an island shape by, for example, screen printing on the ceramic green sheet 4 to form an inner crucible electrode pattern 42p ^ (3). Then, as shown in FIG. 6(b), the portion on which the internal electrode pattern 42p is not formed on the ceramic green sheet 4, the side surface side gap portion Gs and the end surface side gap portion GE are printed. The ceramic material constituting the ceramic paste is a ceramic material having a higher Mg content than a ceramic material constituting the ceramic green sheet 41 as a base. Further, in the case where Mg is obliquely distributed in the gap portion, for example, a plurality of ceramic pastes having different Mg contents may be prepared, and a method of sequentially printing them may be used. (4) Next, as shown in Fig. 6(b), the ceramic green sheets 41 are laminated while being shifted by a predetermined distance in the longitudinal direction to form a mother block. Further, an unprocessed sheet is used for the outer layer of the outermost layer without forming an internal electrode pattern. In addition, the mother block may need to be scrapped along the lamination direction by means of the equalization method, etc. 14 200908043. (5) Next, the mother block is cut to a predetermined size along the predetermined cutting line L to cut. μ piece (see, Figure 6 (c)). Further, in Fig. 6(c), a single ceramic unprocessed sheet is shown for convenience to indicate the cutting line L. In addition, the original wafer is ground by a method such as σ, roller polishing, etc., so that the ridge line and the corner of the original wafer are rounded. (6) Next, the original wafer (original pottery layered body) is fired. The degree of burning is preferably from 9 〇 0 to 13, and C is preferred. The ambient atmosphere of the firing may be appropriately used in an ambient atmosphere such as a large oxygen or N2. ()', a human conductive paste is applied to two or two of the fired ceramic laminates to be baked to form an external terminal electrode. The baking temperature is preferably 7 〇〇 to _ C. Baking atmosphere atmosphere. , the field knife does not use large milk, N2 and other environmental gases" m see also need to be on the external terminal electrode surface, forming a money coating to enhance the dream of 9 dreams or enhance the purity of solder. It has a container as shown in Fig. 丨~4. 'The laminated ceramic material is composed of the laminated ceramic capacitor in this embodiment, and the ceramic unprocessed sheet is used to form a ceramic unprocessed sheet. °, the material is used as the material, and the Mg content is used as the material. The height < ting ten is used as the side-side gap portion rn ^ ^ paste, so that the ceramic gap portion GE of the front end side gap is located on the end face side of the gap portion of the 'no' side surface The area of the position is included in the = and the first: the internal electrode ... the concentration of the same height g is 咼 并 他 他 邱 邱 邱 邱 邱 , , , , , , , 邱 乂 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他By constituting the internal electrode 丨, 2 of 15 200908043 and the Mg oxidizing compound to fill the internal electrode 2 (four) domain ^ MEI boundary portion (four) gap c (column 5), and by chemical compounding:, combined with the internal electrode i, 2 and the region Gsj ^, so that a multilayer ceramic electric device with south moisture resistance can be obtained In addition, since a number of expansions of the constituent components can be generated between the ceramic layers, the side-side gap portion Gs, the region of the end-face side gap portion = the distance between each other and the region Gei, the wave duration may be It is slightly higher. s Also, although the Mg in the pottery can exist in the form of Mg〇, it can also exist in the state of a compound such as an oxide. However, the glass composition ◦ § is not good. When the amount of breakage of the side-side gap portion Gs and the end-face side gap portion E is increased, the side-side gap portion A and the end surface-side gap have a lower sintering temperature, and the original heat is easily transmitted to the vicinity of the surface of the sundial. The side side gap mail r _ "side gap portion Gs, end face = and cause electricity...: E will become excessively sintered, resulting in a structural defect or strength reduction of the body 4 of the electric body. And the engraving is rich in the MKMg content of the Mg region, As described above, the addition ratio of the second component to the main component of the ceramics is preferably 以0.5 to L〇m〇1% of the effective layer portion. Although it is also considered to constitute the formation of the capacitor body The concentration of Mg 2 generally increases, but if the degree of the effective layer is changed, the characteristics of the capacitor (the dielectric constant, the temperature G, and the Shanghai factor) cannot be obtained. Therefore, the side side is improved as in the present invention. The gap portion Gs & face-side gap portion Ge contains more Mg. 16 200908043 In the laminated ceramic electronic component of the present invention, the ceramic layer can be made of BaTiO, butyl; 八1(^>3, SrTi〇3, And a component such as CaZr03 or the like as a main component may be added to the main component such as a quinone compound, an Fe compound, a Cr compound, a Co compound, a ruthenium, a τ. In the laminated ceramic electronic component of the present invention, the thickness of the ceramic layer is preferably 1 to 10 #m. In this month, the internal electrode contains Ni as a requirement. Specifically, it is a Ni compound containing a metal such as Ni or Ni, or a Sichuan alloy. The thickness of the internal electrode is preferably 1 to 1 Å. Further, in the present invention, it is preferable that the external terminal electrode has a plurality of layers including a base electrode = a plating layer formed thereon. The external terminal electrode is usually formed so as to be wound around the main surface and the side surface from the end surface, but may be formed at least at the end surface. Metals such as &, state, and Ag-Pd can be used as the base electrode constituting the external terminal electrode. The base electrode is preferably glass-containing. The plating layer of the terminal electrode is preferably a two-layer structure of a (four) Ni plating layer and a Sn plating layer in the case where the laminated ceramic electronic component is soldered. It is preferable to use a two-layer structure in which a Ni plating layer or an Au plating layer is used in the case of a laminated electronic component which is made of a conductive adhesive or a wire bonding. Further, in the case where the capacitor is embedded in the wax substrate, it is preferable to form the outer layer by a layer of mineral. The plating layer does not have to be defined as 2 layers, 1 layer or more. Also, «the thickness of each layer of the layer! m is preferred. Further, a resin layer for relieving stress may be formed between the base electrode and the forged layer. In addition, the present invention is directed to the invention of the reaction between Ni contained in the internal electrode and Mg contained in the ceramic, and is not limited to the laminated ceramic capacitor as long as it can be made to have a specific structure of the present invention and can be expected to have an effect. It can also be applied to laminated thermistors and laminated inductors. [Embodiment 2] FIG. 7 is a cross-sectional view showing a configuration of a main part of a laminated ceramic electronic component (a laminated ceramic capacitor in the present embodiment) according to another embodiment (Embodiment 2) of the present invention, which corresponds to Embodiment B. Fig. 8 is a view for explaining the configuration of a multilayer ceramic capacitor according to a second embodiment of the present invention. As shown in Fig. 7 and Fig. 8, the multilayer ceramic capacitor of the second embodiment has the side surface side gap portion Gs as the Mg-rich region Mr, and also the ceramic layer outside the inner electrode of the outermost layer among the internal electrodes. The vertical projection region 13b of the side-side gap portion Gs of the (outer layer) 3b is set to be rich in the Mg region Mr. In addition, the case of the multilayer ceramic capacitor of the form 2 is rich.

Mg區域MR中,Mg濃度係具有從陶瓷燒結體之外側向内 側降低的濃度梯度。 亦即,本貫施形態2之積層陶瓷電容器,在下述諸點 構成係與該實施形態1之情形不同,亦即:在内部電極之 中較最外層之内部電極外側之陶瓷層(外層)3b之側面侧間 隙部Gs的垂直投影區域13b亦形成富含Mg區域Mr、在 端面側間隙部ge未形成富含Mg區域Mr、及富含Mg區 域MR中,Mg濃度具有從陶瓷燒結體之外側向内側降低的 濃度梯度。 18 200908043 此外,其他構成則與該實施形態i之情形相同。 即使本實施形態2之構成的情形,由於側面側間隙部 Gs及側面侧間隙部~之垂直投影區域m係設為 區域’内部電極之側部與陶究層之間隙係藉由Ni與岣之 氧化化合物來填充’且内部電極之侧部與陶竟層係藉由Ni 與Mg之氧化化合物更確實結合,因此與該實施形態】之 情形同樣地,可製得具備高耐濕性且即使在小型化之情況 下亦對耐濕性之可靠度高的積層陶瓷電容器。 其次,針對該積層陶堯電容器之製造方法作說明。 當製造本實施形態2之積層陶瓷電容器時,在實施形 態1之積層陶兗電容器之製造方法的步驟(3)中,於陶究未 加工片上之内部電極圖案的周邊區域(未形成内部電極圖案 之部分),塗布陶究膏,該陶免膏係使用與構成陶£未加工 片(作為基底)之陶瓷材料相同的陶瓷材料。 接著,與實施形態1之情形同樣地,-邊將陶竟未加 工片沿長度方向交互錯開既定距離_邊加以積層,以製作 母塊。此外,將未形成内部電極圖案之外層用未加工片 層於最外層。 接著’可視須要藉由均虔法等方法將母塊沿積層方向 壓接。 之後,與實施形態1之情形同樣地,沿既定切割線將 母塊切割成既定尺寸以切取原始晶片。此外,視須要亦可 以滾筒研磨等方法來研磨原始晶片,使原始晶片之稜線部 及角部帶圓角。 200908043 接著,將製得之原始晶片的兩側面,浸潰於以i 化 之比例含有MgO之有機黏結劑溶液,使原始晶片含浸 分後加以乾燥。 之後,以與實施形態1之情形同樣的方法,藉由進行 燒成、外部端子電極之形成,而製得如圖7及8所示要部 之在陶瓷燒結體10之富含Mg區域Mr中,Mg濃度具有 從陶竟燒結體1G <外侧向内側降低之濃度梯度的積層陶 瓷電容器。 曰 〜55曰日乃& 一對側面, 浸潰於含有MgO之有機黏結劑溶液,但視情況亦可 將原始晶片整體浸潰於含有M ^ ^ ^ ^ ^ ^ ^ 之有機黏結劑溶液的構 成。In the Mg region MR, the Mg concentration has a concentration gradient which decreases from the outer side to the inner side of the ceramic sintered body. In other words, the laminated ceramic capacitor of the second embodiment differs from the first embodiment in that the ceramic layer (outer layer) 3b outside the internal electrode of the outermost layer among the internal electrodes is used. The vertical projection region 13b of the side-side gap portion Gs also forms the Mg-rich region Mr, the Mg-rich region MR is not formed in the end face-side gap portion ge, and the Mg-rich region MR has a Mg concentration from the outside of the ceramic sintered body. Concentration gradient that decreases toward the inside. 18 200908043 In addition, the other configuration is the same as that of the embodiment i. In the case of the configuration of the second embodiment, the side-side gap portion Gs and the vertical projection region m of the side-side gap portion are the regions where the side portion of the inner electrode and the ceramic layer are separated by Ni and The oxidized compound is filled and the side portion of the internal electrode and the ceramic layer are more reliably bonded by the oxidized compound of Ni and Mg. Therefore, in the same manner as in the embodiment, it is possible to obtain a high moisture resistance even in In the case of miniaturization, a multilayer ceramic capacitor with high reliability against moisture resistance is also available. Next, a description will be given of a method of manufacturing the laminated ceramic capacitor. When the multilayer ceramic capacitor of the second embodiment is manufactured, in the step (3) of the method for producing a multilayer ceramic capacitor according to the first embodiment, the peripheral region of the internal electrode pattern on the unprocessed sheet is used (the internal electrode pattern is not formed). In part, the ceramic paste is applied, and the ceramic paste is the same ceramic material as the ceramic material constituting the unprocessed sheet (as a substrate). Then, in the same manner as in the case of the first embodiment, the ceramic unprocessed sheets are alternately shifted by a predetermined distance in the longitudinal direction to form a mother block. Further, a layer other than the inner electrode pattern is not formed with an unprocessed sheet on the outermost layer. Then, it may be necessary to crimp the mother block in the lamination direction by a method such as uniformity. Thereafter, as in the case of the first embodiment, the mother block is cut into a predetermined size along a predetermined cutting line to cut the original wafer. Further, the original wafer may be ground by a method such as barrel polishing as needed, so that the ridge line portion and the corner portion of the original wafer are rounded. 200908043 Next, the two sides of the obtained original wafer were immersed in an organic binder solution containing MgO in a ratio of i, and the original wafer was impregnated and dried. Thereafter, in the same manner as in the first embodiment, by firing and forming an external terminal electrode, the Mg-rich region Mr in the ceramic sintered body 10 as shown in Figs. 7 and 8 is obtained. The Mg concentration has a multilayer ceramic capacitor having a concentration gradient which decreases from the outer side to the inner side of the ceramic body 1G <曰~55曰日 is a pair of sides, immersed in an organic binder solution containing MgO, but the original wafer may be entirely immersed in an organic binder solution containing M ^ ^ ^ ^ ^ ^ as the case may be. Composition.

[實施形態3J 究電=表示本發明其他實施形態(實施形態3)之積層陶 的截面 本實施形態中係積層陶竟電容器)之要部構成 圖二圖,係相當於實施形態1之圖線截面圖, 構成的圖。 〜3之積層陶竟電容器之 本實施形態3之積層陶瓷雷空哭 俜於相… 闹文電合盗,如圖9及圖10所示,[Embodiment 3J] The cross section of the laminated ceramics according to another embodiment (Embodiment 3) of the present invention is a schematic diagram of the main part of the laminated ceramic capacitor in the present embodiment, and corresponds to the graph of the first embodiment. Sectional view, the resulting diagram. ~3 of the layered ceramic capacitors. The laminated ceramics of this embodiment 3 is crying and smashing... The essays, as shown in Figure 9 and Figure 10,

係於側面側間隙部Gs形成富含M 電極之中軺Is g匚域mr,且亦於内部 <十較最外層之内部電極外 面側間隙邻f 卜彳彳之陶是層(外層)3b之側 J丨皁4 Gs的垂直投影區域 另一古;^ 外$成虽含^區域1^。 为方面,如圖1〇所示,於诚而相丨 成富含Mg區域。 、 Ή隶部ge則未形 20 200908043 亦即,本實施形態3之積層 。 構成係與該實施形態丨之情形 奋盜,在下述諸點 中較最外層之内部電極㈣之同’=即:在内部電極之 隙部Gs的垂直投影區域m f層^層讲之側面側間 在端面側間隙部〇£未形成富含二It is formed in the side-side gap portion Gs to form the 轺Is g匚 domain mr in the M-rich electrode, and also in the inner < ten outermost outer electrode of the inner electrode, the outer side of the inner side of the gap is the layer (outer layer) 3b The vertical projection area of the side J 丨 soap 4 Gs is another ancient; ^ outside $ into the ^ area 1 ^. For the aspect, as shown in Figure 1〇, Yu Cheng is a rich Mg-rich area. Ή Ή 部 ge is not shaped 20 200908043 That is, the layer of the third embodiment. The configuration is struggling with the embodiment, and the inner electrode (four) of the outermost layer in the following points is the same as that of the inner surface of the inner electrode gap portion Gs. In the end face side gap, the 未 £ is not formed to be rich in two

其他構成則與該實施形態丨 R 施形態3中’雖使Mg大致:擴目冋。此外’本實 峋並無須均勻分布擴及間隙部整;布=間隙部整體,但 部之内部電極的附近部分即可。X 、吣存在於間隙 之情形般以到達峨結體之側面的方g::實施形態3 體,或以偏折至間隙部之内部極:刀於間隙部整 在。 丨窀極的附近部分之形態存 :實施形態3之構成之情形下,亦可製得具備高❹ 在小型化之情況下亦對耐濕性之可靠度高層 陶瓮電容器。 其次,針對該積層陶竟電容器之製造方法作說明。 M u_μ加^41上藉由例如網版 印刷等將導電性膏42印刷成帶狀,以形成内部電極圖案 42ρ ° 其次’ 一邊將陶竟未加工月41沿寬度方向交互錯開既 定距離-邊加以積層,以製作母塊。此外,將未形成内部 電極圖案之外層用未加工片積層於最外層。 此外,母塊可視須要藉由均壓法等方法沿積層方向壓The other configuration is the same as the embodiment 丨 R in the third embodiment, although Mg is substantially enlarged. In addition, the present embodiment does not need to be evenly distributed and spread over the gap portion; the cloth = the entire gap portion, but the vicinity of the internal electrode of the portion may be used. X and 吣 are present in the gap to reach the side of the 峨 体 : g : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : In the case of the configuration of the third embodiment, in the case of the configuration of the third embodiment, it is possible to obtain a high-rise ceramic capacitor having high reliability in the case of miniaturization and reliability against moisture. Next, a description will be given of a method of manufacturing the laminated ceramic capacitor. On the M u_μ plus 41, the conductive paste 42 is printed in a strip shape by, for example, screen printing to form the internal electrode pattern 42ρ °. Next, the ceramic unprocessed month 41 is alternately shifted by a predetermined distance in the width direction. Laminated to make the mother block. Further, the outer layer in which the inner electrode pattern was not formed was laminated on the outermost layer with the unprocessed sheet. In addition, the mother block may need to be pressed in the direction of the laminate by means of a pressure equalization method or the like.

接。 S 21 200908043 接者,沿既定切割線L將母塊切割成既定尺寸以切取 原始晶參照圖11(b))。此外,圖⑽中,為了方便係 取出1片陶究未加工片來表示切割線L。 此外’該原始晶片,在内部電極圖案不僅是露出於一 側面而係於兩側面的霞山 w囟岣路出之構造之點,構成係與實施形 態1及2之原始晶片有所不同。 其次’於原始晶片之兩側面’以既定厚度塗布使用啦 :有率高於構成陶究未加工片之陶竟的陶究膏,並加以乾 燥。 此外,在使Mg傾斜分布於間隙部之情況下,可使用 =備.I含有率不同之複數種陶竟膏,依序進行塗布、 乾爍重複塗布之方法等。 精此,於原始晶片之兩側而 ^ ^ . 面即形成相當於側面側間 隙。P之虽含Mg區域(參照圖9)。 又,此方法之情形下,亦在 η诈電極之中較最外厝之 内部電極外側之陶瓷層之侧面 士—人w r· ^ 間隙。P的垂直投影區域形 成畐含Mg區域。 之後,視須要亦可以滚筒研磨 栋私曰μ々换仏 寺方法來研磨原始晶片, 使原始晶片之稜線部及角部帶圆 月。然而,當塗布陶竞膏 時,在使用將原始晶片之側面浸、、主 的情況下,由於依據陶曼膏之竟膏浴之浸潰方法 部及角部會帶圓角,因此有時不:二狀,原始晶片之稜線 h貝滾筒研磨。 其他步驟則與實施形態i相同。 實施例 22 200908043 [實施例1 ] 百先’使用以耐還原性之鈦酸鋇系陶瓷粉末為主體之 陶瓷漿液使厚度為20"m之矩形陶瓷未加工片成形。 名f還原)·生之鈦酸鋇系陶瓷粉末,亦即有效層部用陶瓷材 料,本實施例中,你 糸使用以99mol0/〇之比例含有BaTi〇3, 1 mol%之比例含右v 有丫2〇3’但不含MgO之材料(Mg0添加量:Pick up. S 21 200908043 Next, the mother block is cut to a predetermined size along the predetermined cutting line L to cut the original crystal as shown in Fig. 11(b)). Further, in Fig. 10, in order to facilitate the removal of one piece of ceramic unprocessed piece, the cutting line L is indicated. Further, the original wafer has a structure in which the internal electrode pattern is not only exposed on one side but also on the side surface of the Xiashan w囟岣 road, and the structure is different from the original wafer in the first and second embodiments. Secondly, it is applied at a predetermined thickness on both sides of the original wafer: the ratio is higher than that of the ceramics that constitute the ceramics of the unprocessed film, and dried. Further, in the case where Mg is obliquely distributed in the gap portion, a plurality of kinds of ceramic pastes having different contents of 备.I may be used, and coating, drying and repeated coating may be sequentially performed. In this case, on the two sides of the original wafer, the surface is formed to correspond to the side side gap. P contains a Mg region (see Fig. 9). Moreover, in the case of this method, the side of the ceramic layer on the outer side of the innermost electrode of the outermost electrode is also the gap of the human-w w·· gap. The vertical projection area of P forms a 畐-containing Mg region. After that, the original wafer can be ground by the method of barrel grinding, and the ridge line and the corner of the original wafer can be rounded. However, when the Tao Jing cream is applied, when the side of the original wafer is immersed and used, the portion and the corner portion of the impregnation method according to the Taoman cream may be rounded, so sometimes : Two-shaped, the original wafer ridgeline h shell roller grinding. The other steps are the same as in the embodiment i. Example 22 200908043 [Example 1] A ceramic slurry mainly composed of a barium titanate-based ceramic powder which is resistant to reduction was used to form a rectangular ceramic green sheet having a thickness of 20 " m. Name f reduction) · Raw barium titanate ceramic powder, that is, ceramic material for effective layer. In this example, you use BaTi〇3 in a ratio of 99mol0/〇, and the ratio of 1 mol% contains right v. There are 2〇3' but no MgO materials (Mg0 added:

Omol%)。 著於。亥陶冑未加工片上,將掺和有平均粒徑為0.3 之鎳粉末100重量份與有機黏結劑3.0重量份的導電 H 3作為内#電極形成用導電性膏,Μ網版印刷成短邊寬 度為800 // m ,形成内部電極圖案。 接著將摻合陶瓷材料(構成間隙部之陶瓷材料,Mg〇 添加比例車“亥有效層部用陶究材料乡〇 ⑼之陶究材料) 1 00重量伤與有機黏結齊1 3 〇重量份的陶:是膏,以網版印Omol%). At. On the unprocessed sheet of Hetao, a conductive powder of 100 parts by weight of nickel powder having an average particle diameter of 0.3 and 3.0 parts by weight of an organic binder is used as a conductive paste for forming an internal electrode, and the screen is printed as a short side. The width is 800 // m and the internal electrode pattern is formed. Next, the ceramic material is blended (the ceramic material constituting the gap portion, the Mg 〇 addition ratio vehicle, the ceramic material for the turf effective layer of the ceramic layer of the turf (9)), and the weight of the organic binder is 1 3 〇 Tao: It is a paste, printed in the screen

刷於内。卩%極圖案之周目’以消除内部電極圖案與其周圍 之段差,其中,相對於以99m〇l%之比例含有BaTi〇3, lm〇1% 之比例3有Y2 03的主成分1〇〇 m〇1%,該陶究材料係以 0_5mol%之比例摻合Mg〇作為添加物。 接著,將240片印刷有該導電性膏及陶瓷膏之陶瓷未 加工片加以積層,並進一步將各7〇片以上述方式成形且 未形成内部電極圖案之陶瓷未加工片(外層用陶瓷未加工片) 積層於其上下兩面側,藉由沿厚度方向加壓並予以切割, 而製得長度2.0mmx寬度l_〇mmx厚度丨〇mm之原始晶片(未 燒成之陶瓷燒結體)。 23 200908043 以1300t之溫度將該原始晶片加以焯 ! .6麵X寬度0,8mmx厚度0.8mm之陶^ ,而製得長度 於所製得之陶£燒結體之内部電極 面,塗布導電性膏並加以培烤,藉此形 出山面的兩端 而製得積層陶瓷電容器A(試料A) ^ 。卩端子電極, 又,構成間隙部之陶瓷材料,相 例含有BaTi〇3, lmol%之比例含有γ、 "m〇i%之比 1。。— : ’係使用"·75_之比例摻乂二:::: 物之陶瓷材料(Mg〇之添加比例較該有 "、' 口 .n7, 10/ , ㈠乂忒有蚨層部用陶瓷材料 .m〇1/°之材料),其他則以與該積層陶瓷電容器a之 情形相同條件,製作積層陶瓷電容器B(試料B)。 ° 又,構成間隙部之陶竟材料,相對於^ 99m〇i%之比 例含有BaTi〇3 , lln〇1%之比例含有γ2〇3的主成分為 ⑽⑽% ’係、使用以lm〇1%之比例摻合Mg〇作為添加物的 陶瓷材料(較該有效層部用陶瓷材料多1〇1〇1%之陶瓷材 料)’其他則以與該積層陶瓷電容器A之情形相同條件, 製作積層陶瓷電容器C(試料C)。 又構成間隙部之陶莞材料,相對於以99mol%之t匕 例含有BaTi〇3,lm〇1%之比例含有γ2 〇3的主成分為 1 OOmol /〇,係使用以1 5rn〇i%之比例摻合Mg〇作為添加物 的陶变*材料(較該有效層部用陶瓷材料多1.5mol%之陶瓷材 料)’其他則以與該積層陶瓷電容器A之情形相同條件, 製作積層陶瓷電容器D(試料D)。 又’為了比較,該陶瓷膏係使用未添加Mg〇且將使用 24 200908043 /、陶文未加工片相同陶 ^ ^ 不之陶瓷膏,以網版印刷於内 °?電極圖案周圍的陶瓷未加工片^ 較例1 ϋ a 力工片,以相同方式製作作為比 华例1之積層陶变電容器E(試料E)。 C、二t針對該實施例1之積層陶曼電容器(試料)A、B、 直、、,電壓11之積層陶i電容器(試_,進行施加0.5V =測試,並以電阻值在一Π以下之積層陶 為不良品’其他則為良品來進行選別。 接:’針對選別後之良品進行耐濕測試以確認耐濕性。 測試條件係以溫度為1Brush inside.周% pole pattern of the eyepiece 'to eliminate the difference between the internal electrode pattern and its surroundings, wherein BaTi〇3 is contained in a ratio of 99m〇l%, lm〇1% ratio 3 has a main component of Y2 03〇〇 M〇1%, the ceramic material was blended with Mg〇 as an additive in a ratio of 0-5 mol%. Next, 240 pieces of ceramic green sheets on which the conductive paste and the ceramic paste are printed are laminated, and each of the 7-inch sheets is further formed in the above-described manner and the ceramic unprocessed sheets in which the internal electrode patterns are not formed (the ceramics for the outer layer are not processed). The laminate was laminated on the upper and lower sides thereof, and pressed and cut in the thickness direction to obtain an original wafer (unfired ceramic sintered body) having a length of 2.0 mm x a width of l_〇mmx and a thickness of 丨〇 mm. 23 200908043 The original wafer was immersed at a temperature of 1300t. .6 surface X width 0,8mmx thickness 0.8mm ceramics, and the length of the inner electrode surface of the prepared ceramic sintered body was prepared, and the conductive paste was applied. And laminating it to form the laminated ceramic capacitor A (sample A) ^ by forming both ends of the mountain surface. The terminal electrode and the ceramic material constituting the gap portion partially contain BaTi〇3, and the ratio of 1 mol% contains the ratio of γ and "m〇i%. . — : 'The ratio of using "·75_ is 乂2:::: The ceramic material of the material (Mg〇 is added in proportion to the ", 'mouth.n7, 10/, (1) A ceramic capacitor B (sample B) was produced under the same conditions as in the case of the multilayer ceramic capacitor a, except that the ceramic material was used. ° Further, the ceramic material constituting the gap portion contains BaTi〇3 in proportion to ^99m〇i%, and the ratio of lln〇1% contains γ2〇3, and the main component is (10)(10)% 'system, used lm〇1% a ceramic material in which Mg 〇 is blended as an additive (a ceramic material more than 1% by mass of the ceramic material for the active layer portion). Others, a laminated ceramic is produced under the same conditions as in the case of the laminated ceramic capacitor A. Capacitor C (sample C). Further, the pottery material constituting the gap portion has a main component containing γ2 〇3 in a ratio of BaTi〇3, lm〇1% in a case of 99 mol% of t, and is 1 00 mol / 〇. a ratio of Mg 〇 as an additive to the ceramic material* (a ceramic material 1.5 mol% more than the ceramic material for the effective layer portion). Others, a multilayer ceramic capacitor is produced under the same conditions as in the case of the multilayer ceramic capacitor A. D (sample D). In addition, for comparison, the ceramic paste is made of ceramic unprocessed sheet which is printed on the inner electrode pattern by screen printing without using Mg 〇 and using 24 200908043 /, Tao Wen unprocessed piece of the same pottery ^ ^ ceramic paste ^ Comparative Example 1 ϋ a Force sheet, in the same manner as the laminated ceramic capacitor E (sample E). C, two t for the laminated Taman capacitors of the first embodiment (samples) A, B, straight,, voltage 11 of the multilayer ceramic i capacitor (test _, apply 0.5V = test, and the resistance value in one Π The following layered pottery is a defective product. Others are good for sorting. Connect: 'The moisture resistance test is performed on the selected products to confirm the moisture resistance. The test conditions are based on temperature 1

直 巧50濕度為95%RH、施加5V 且W電壓、保持時間144Straight 50 humidity is 95% RH, 5V is applied and W voltage, hold time 144

之古、ώ J日卞’於測試後以常溫施加10V 不良。 隹1_0χ10Ε6Ώ以下者判定為耐濕 表1係表示針對實施例1之積層 心償層陶是電容器(試料)Α、 、c、Ε)及比較例1之積層陶究電容 瓦电奋器(§式枓)Ε各500個, 所調查之耐濕測試前的選別不良率、 如& 干及璉別後之良品各500 们所調查之耐濕測試不良率的測量結果。 [表1] ---—— MgO掺合比例(mol%) ~~~~-------- 耐濕測試前夕不声、农 4料A -------_, 、卜民.平 耐濕測試不良率 」ϊ^例) 0.5 0-40% 5% 試料Β --—----- ^例) 0.75 0.60% 0% 〇工、料1 1 0.60% 0% u (實施例) 1.5 0.40% 15% ϋ工、料_b 0 _- 0.40% 72% 25 200908043 如表1所示,已確認實施例丨之積層陶瓷電容器(試 料)B C、D及比較例i之積層陶瓷電容器(試料之 对濕測試前的不良率雖為同等,但針對耐濕測試*良率實 施例1之試料A、B、C、D係大幅低於比較例1之試料)E。 特別是試料B,C中耐濕測試不良率為0%。 上又,比較例1之試料E中,觀察到諸多即使是耐濕測 试後被判定為良品者,測試後之電阻值已較測試前降低。 , 又,在實施例1之試料B、C中,於内部電極之端部 完全無法檢測出間隙,在試料A、D亦僅於積層方向中央 #之内°卩電極的端部觀察到些微間隙。由此可推測,係因 實施例1之積層陶瓷電容器中,可抑制水分滲入内部電極 之*而部與周圍之間隙,而抑制了耐濕測試之不良的產生。 [實施例2] 首先’使用以耐還原性之鈦酸鋇系陶瓷粉末為主體之 陶瓷漿液,使厚度為2.0 // m之矩形陶瓷未加工片成形。 該耐還原性之鈦酸鋇系陶瓷粉末,具體而言,係使用以 99m〇l%之比例含有BaTi〇3,lm〇1%之比例含有' ,但 不δ MgO之材料(Mg〇添加量:〇 mol%)。 接著,於該陶瓷未加工片上,將摻和有平均粒徑為〇. 3 # m之鎳粉末! 00重量份與有機黏結劑3 .〇重量份的導電 性膏作為内部電極形成用導電性膏,以網版印刷成短邊寬 度為800 m ’形成内部電極圖案。 接著’將摻合與用來使該陶瓷未加工片成形之陶究毁 液所含之陶变粉末相同的陶莞粉末(未添加Mg〇) 1 〇〇重 26 200908043 量份與有機黏結劑 部電極圖案之周圍 差。 3·〇重量份的陶瓷膏,以網版印刷於内 ’以消除内部電極圖案與其周圍之段 接著,將240片印刷有該導電性膏及陶究膏之陶t未 加工片加以積層,並進_步將各7〇 #以上述方式形成且 未形成内部電極圖案之陶竟未加工片(外層用陶曼未加工片) 積層於其上下兩面側,藉由沿厚度方向加壓並予以切割, 而製得長度2.0mmx寬度10麵X厚度1.0mm之原始晶片(未 燒成之陶瓷燒結體)。 接著’將所製得之原始晶片的一側面,浸潰於以Μ 之比例含有MgO之有機黏結劑溶液並予以乾燥後,另一 側面亦加以浸潰,使兩侧面含浸Mg。 使該原始晶片乾燥後,再以13⑽。c之溫度加以燒成, 而製得長度Μηπηχ寬度〇.8mmx厚度〇8mm之陶究燒結 體。 接著,於所製得之陶-充燒結體之内部電極之露出面的 ’㈣導電'&膏並加―烤’藉此形成外部端子電 極’而製得積層陶瓷電容器F(試料F)。 此外,該積層陶究電容器F(試料F),係相當於且有該 實施形態2所說明之構成之積層陶 、 』充虿谷盗的積層陶瓷電 谷器’且係陶竞燒結體之兩側面側為&人、 J為虽含Mg區域,富含After the test, the application of 10V was performed at room temperature.隹1_0χ10Ε6Ώ or less was judged to be moisture-resistant. Table 1 shows that the laminated layer of the core layer of the first embodiment is a capacitor (sample), c, Ε), and the laminated ceramic capacitor of the comparative example 1 (§枓) 500 500, each of the surveyed non-destructive testing results, such as the results of the humidity test, the dryness and the quality of the poor after the screening of 500 samples. [Table 1] ---—— MgO blending ratio (mol%) ~~~~-------- Wetness test on the eve of the test, agriculture 4 materials A -------_, Bu Min. Flat moisture resistance test failure rate ϊ^example) 0.5 0-40% 5% Sample Β -------- ^ Example) 0.75 0.60% 0% Completion, material 1 1 0.60% 0% u (Example) 1.5 0.40% 15% 、,料_b 0 _- 0.40% 72% 25 200908043 As shown in Table 1, the multilayer ceramic capacitors (samples) BC, D and Comparative Example i of the examples were confirmed. The multilayer ceramic capacitor (the sample had the same defect rate before the wet test, but the sample A, B, C, and D of Example 1 was significantly lower than the sample of Comparative Example 1) for the moisture resistance test. In particular, in the samples B and C, the moisture resistance test failure rate was 0%. Further, in the sample E of Comparative Example 1, it was observed that many of the resistance values after the test were judged to be good after the moisture resistance test, and the resistance value after the test was lower than that before the test. Further, in the samples B and C of the first embodiment, the gap was not detected at the end portion of the internal electrode, and the samples A and D were also observed only in the center of the lamination direction. . Therefore, in the multilayer ceramic capacitor of the first embodiment, it is possible to suppress the penetration of moisture into the gap between the portion of the internal electrode and the surrounding portion, thereby suppressing the occurrence of defects in the moisture resistance test. [Example 2] First, a ceramic slurry mainly composed of a barium titanate-based ceramic powder having a reducing property was used to form a rectangular ceramic green sheet having a thickness of 2.0 / m. The reduction-resistant barium titanate-based ceramic powder is specifically a material containing BaTi〇3 in a ratio of 99 m〇l%, and a ratio of 1% of lm Mg, but not δ MgO (Mg〇 addition amount) :〇mol%). Next, on the ceramic green sheet, nickel powder having an average particle diameter of 〇. 3 # m is blended! The conductive paste of 00 parts by weight and 3 parts by weight of the organic binder was used as a conductive paste for forming an internal electrode, and an internal electrode pattern was formed by screen printing to have a short side width of 800 m'. Then, 'the blend of the pottery powder contained in the ceramics used to shape the ceramic unprocessed sheet is the same as the pottery powder (without adding Mg〇) 1 〇〇重26 200908043 Parts and organic binder parts The circumference of the electrode pattern is poor. 3. The weight of the ceramic paste is printed in the screen to eliminate the internal electrode pattern and the surrounding segments. Then 240 pieces of the ceramic paste printed with the conductive paste and the ceramic paste are laminated. _Steps each of the 〇################################################################################################# An original wafer (unfired ceramic sintered body) having a length of 2.0 mm x a width of 10 faces x a thickness of 1.0 mm was obtained. Next, one side of the obtained original wafer was immersed in an organic binder solution containing MgO in a ratio of ruthenium and dried, and the other side was also impregnated so that both sides were impregnated with Mg. After the original wafer was dried, it was again 13 (10). The temperature of c was fired to obtain a ceramic sintered body having a length Μηπηχwidth 〇8 mmx thickness 〇8 mm. Then, the external terminal electrode ' was formed by the 'fourth conductive' & paste of the exposed surface of the internal electrode of the obtained ceramic-filled body to form an external terminal electrode ' (sample F). In addition, the laminated ceramic capacitor F (sample F) is equivalent to the laminated ceramics of the structure described in the second embodiment, and the laminated ceramic electric grid of the 虿谷谷盗, and the two ceramics of the ceramics. The side of the side is & people, J is rich in Mg, rich in

Mg區域中Mg濃度具有從陶瓷燒結 體之外側向内側降低之 濃度梯度的積層陶瓷電容器(參照圖7、圖8)。 一The Mg concentration in the Mg region has a multilayer ceramic capacitor having a concentration gradient which decreases from the outside to the inside of the ceramic sintered body (see Figs. 7 and 8). One

又,以同樣方式使用以3.〇m〇1/L 之比例含有MgO之 27 200908043 有機黏結劑溶液,並藉由* M車挪也 稽田相R步驟製得積層陶瓷電容器 G (咸料G)。 又,為了比較,以與該實施例!所說明之比較例丄之 情形相同方法,,製作作為比較例2之積層陶曼電容器Η(試 料Η)。此外,該比較例2之試料Η雖係以與該比較例"目 同方法所製造,但製造批號與比較例丨不同。 接著,針對本實施例2之積層陶瓷電容器F、G與比 f 較例2之積層陶究電容器Η,以與該實施例i之情形相同 方法,進行耐濕測試前之選別、及針對選別後之良品的耐 濕測試。 將其結果表示於表2。 [表2] 製造條件等 耐濕測試前之 不良率 耐濕測試 不良率 試料F 浸潰於以1.0mol/L之比例含有 _ (實施例) MgO之有機黏結劑溶液 0.20% 6% 試料G 浸潰於以3.0mol/L之比例含有 (實施例) MgO之有機黏結劑溶液 0.60% 0% 試料Η 不浸潰於含有MgO之 (比較例2) 有機黏結劑溶液 0.60% 69% 如表2所示,本實施例2之積層陶瓷電容器f、g與 比車父例2之積層陶瓷電容器η ’如表2所示,可獲得與該 實施例1及比較例丨大致相同之評估結果。 亦即’如表2所示,已確認實施例2之積層陶瓷電容 28 200908043 器F、G及比較例2之積層陶€電容器^耐濕測試前的 不良率雖為同等,但耐濕測試的不良率方面,實施例2之Further, in the same manner, 27 200908043 organic binder solution containing MgO in a ratio of 3.〇m〇1/L was used, and a multilayer ceramic capacitor G (salt G) was prepared by the step of R. ). Also, for comparison, with this embodiment! In the same manner as in the comparative example described above, a multilayered Tauman capacitor Η (sample Η) as Comparative Example 2 was produced. Further, the sample of Comparative Example 2 was produced in the same manner as the comparative example, but the manufacturing lot number was different from the comparative example. Next, the multilayer ceramic capacitors F and G of the second embodiment and the laminated ceramic capacitors of the second comparative example 2 were subjected to the same method as in the case of the example i before the moisture resistance test and after the sorting. Good moisture resistance test. The results are shown in Table 2. [Table 2] Non-destructive rate before moisture resistance test, such as manufacturing conditions, moisture resistance test failure rate, sample F, impregnation in a ratio of 1.0 mol/L _ (Example) MgO organic binder solution 0.20% 6% Sample G immersion The organic binder solution (Example) MgO is contained in a ratio of 3.0 mol/L. 0.60% 0% Sample Η Not impregnated with MgO (Comparative Example 2) Organic binder solution 0.60% 69% As shown in Table 2 As shown in Table 2, the multilayer ceramic capacitors f and g of the second embodiment and the multilayer ceramic capacitor η' of the parent example 2 can obtain substantially the same evaluation results as those of the first embodiment and the comparative example. That is, as shown in Table 2, it has been confirmed that the laminated ceramic capacitors of Example 2, 200908043, F, G, and the laminated ceramic capacitors of Comparative Example 2 have the same defect rate before the moisture resistance test, but the moisture resistance test is In terms of the defect rate, the second embodiment

試料的積層陶瓷電容器F、ΓA G係大幅低於比較例2之積層 陶莞電容器H。特別是’試料G中耐濕測試不良率為州。 又’比較例2之積層陶瓷電容器H t,觀察到諸多即 使是耐濕測試後被判定為自0去 J心Θ艮σ口者,測s式後之電阻值已較測 試前降低。 又,從實施例2之積層陶究電容器G,於内部電極之 端部完全無法檢測出間隙,在比較例2之積層陶究電容器 Η亦僅於積層方向中央部夕, 天邙之内部電極的端部觀察到些微 隙。 [實施例3] 首先,使用以耐還屌,地+ #放< a > 原丨生之鈦&L鋇系陶瓷粉末為主體之 陶瓷漿液,使厚度為2 〇以m夕如求咖a | 以m之矩形陶瓷未加工片成形。 該而十還原性之鈦酸鎖奉陆!签由、士 . „ . 糸陶瓷奋末,亦即有效層部用陶 竟材料’本貫施例3中,知谢_ _^、, 相對於以99mol%之比例含有The multilayer ceramic capacitor F and ΓA G of the sample were significantly lower than the laminated ceramic capacitor H of Comparative Example 2. In particular, the defect rate of the moisture resistance test in the sample G was state. Further, in the multilayer ceramic capacitor H t of Comparative Example 2, it was observed that even if it was judged to be from 0 to J Θ艮 σ after the moisture resistance test, the resistance value after measuring the s type was lower than that before the test. Further, from the laminated ceramic capacitor G of the second embodiment, the gap was not detected at the end portion of the internal electrode, and the laminated ceramic capacitor of Comparative Example 2 was only in the central portion of the laminated direction, and the internal electrode of the scorpio Some micro-gap was observed at the end. [Embodiment 3] First, a ceramic slurry mainly composed of titanium/amp; L 钡 ceramic powder which is resistant to yttrium, earth + #放 < a > is used, so that the thickness is 2 〇 Coffee a | Formed with a rectangular ceramic unprocessed piece of m. The ten-reduced titanate locks are blessed! Signature, 士. „ . 糸 奋 奋 , , , , 糸 糸 糸 糸 糸 糸 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’

BaTiOs,1 mol%之比例会古 v ^ ,, 3 〗3有Υ2〇3的主成分為100 m〇l%, 係使用以lmol%之比例摻合Mg〇之材料。 接著,於該陶瓷未加工w ^ 士 τ & 片上’將換和有平均粒捏為〇. 3 # m之鎳粉末100重量价盘古拖u ^ -、有機黏結劑3.0重量份的導電 性t作為内部電極形成用導_雷客 X用導電性膏,以網版印刷成短邊寬 度為800 // m,形成内部電極圖案。 接著,將摻合陶瓷材料(構成間隙部之陶瓷材料,㈣ 添加比例較該有效層冑用陶:免材料乡〇. 5瓜〇 i %之陶曼材料) 29 200908043 100重量份與有機泰結劑3 Q重量份的陶竟f,以網版印 刷於内部電極圖案之周圍,以消除内部電極圖案與其周圍 之段差,其中,相對於以99则1%之比例含有BaTi03,lm〇㈧ 之匕心丨έ有丫2 〇3的主成分為】〇〇 m〇】0/。,該陶究材料係以 0.5mol%之比例摻合Mg〇作為添加物。 接著將240片印刷有該導電性膏及陶究膏之陶曼未 加工片加以積層,並進一步將各7〇片以上述方式形成且 未形成内部電極圖案之陶究未加工片(外層用陶竟未加工片) 積層於其上下兩面側,藉由沿厚度方向加I並予以㈣, 而製得長度2.0mmx寬度! .〇_厚度】〇贿之原始晶片口 燒成之陶瓷燒結體)。 以1300 C之溫度將該原始晶片加以燒成,而製得長度 l_6mmx寬度〇.8mmx厚度〇 8mm之陶瓷燒結體。 又 於所製得之陶竞燒結體之内部電極之露出面的兩端 面制ί布導電性膏並加以焙烤,藉此形成外部端子電極, 而製得積層陶瓷電容器1(試料I)。 構成間隙部之陶£材料,相對於以Wo之比 ^有㈣〇3,lm〇1%之比例含有I%的主成分為⑽ 使用一 •之比例摻合_作為添加物的 陶广料(Mg〇添加比例較該有效層部用陶究材料多 一。1%之材料),其他則以與該積層陶竟電容器 护 相同條件,製作積層陶瓷電容器j(試料了)。 月y 又’構成間隙部之陶€材料’相對於以99m〇1%之比 例含有BaTi03,lm〇i%之比例含有γ 2 〇3的主成分為100 30 200908043 moiy。,係使用以2m〇m之比例摻合Mg〇作 竞材料(MgO添加比例較該有效層部用陶究衬:夕加物的: 之材料)’其他則以與該積層陶瓷電容器!之lm〇1/° 件,製作積層陶竟電容器K(試料K)。 β开/相同條 又,構成間隙部之陶究材料,相對於以99m〇1%之比 例含有BaTi〇3,lm〇l%之比例含有 z J 』土成分為 1〇〇 mol%,係使用以2.5mol%之比例摻合M : ^ S 吓馬添加物的 ξ· ί. 陶乾材料(MgO添加比例較該有效層部用陶兗材料夕 l.Smol%之陶兗材料)’其他則以與該積層陶竟電容器】2BaTiOs, the proportion of 1 mol% will be ancient v ^ , , 3 〗 3 Υ 2 〇 3 of the main component is 100 m 〇 l%, is to use a ratio of lmol% blended with Mg 〇 material. Next, on the ceramic unprocessed w ^ 士 τ & on-chip 'will be replaced with an average granules for 〇. 3 # m of nickel powder 100 weight price Pangu drag u ^ -, organic binder 3.0 parts by weight of conductivity t As a conductive paste for internal electrode formation, the conductive paste for Rayker X was screen-printed to have a short side width of 800 // m to form an internal electrode pattern. Next, the ceramic material is blended (the ceramic material constituting the gap portion, (4) is added in proportion to the effective layer, and the pottery is used: the material is nostalgic. 5 〇 〇i % of the Taman material) 29 200908043 100 parts by weight and organic knot Agent 3 Q parts by weight of the ceramics f, screen printed around the internal electrode pattern to eliminate the difference between the internal electrode pattern and its surroundings, wherein BaTi03, lm〇 (8) is contained in a ratio of 99% to 99%. The main component of 丨έ2丨έ3〇 is 〇〇m〇]0/. The ceramic material was blended with Mg 〇 as an additive at a ratio of 0.5 mol%. Then, 240 pieces of the Tauman unprocessed sheet on which the conductive paste and the ceramic paste were printed were laminated, and each of the 7-inch sheets was formed in the above-described manner and the ceramic electrode was not formed into the inner electrode pattern (outer layer ceramics) Unprocessed film) Laminated on the upper and lower sides, by adding I in the thickness direction and giving (4), the length is 2.0mmx width! .〇_thickness] The raw wafer mouth of the bribe is fired into the ceramic sintered body). The original wafer was fired at a temperature of 1300 C to obtain a ceramic sintered body having a length of l_6 mmx and a width of 88 mmx and a thickness of 8 mm. Further, a conductive paste was formed on both ends of the exposed surface of the internal electrode of the obtained ceramic composition, and baked to form an external terminal electrode, thereby producing a laminated ceramic capacitor 1 (Sample I). The ceramic material constituting the gap portion is composed of a ratio of Wo (4) 〇 3, lm 〇 1%, and a main component of I% (10) is blended with a ratio of _ as an additive. The addition ratio of Mg〇 is one more than that of the ceramic material in the effective layer portion. 1% of the material is used, and the other layer is made of the laminated ceramic capacitor j (sample). In the month y, the material of the ceramic material constituting the gap portion contains BaTi03 in a ratio of 99% to 1%, and the ratio of lm 2 〇 3 in the ratio of lm 2 〇 3 is 100 30 200908043 moiy. It is used to blend Mg 〇 as a competition material in a ratio of 2 m 〇m (the ratio of MgO added to the lining of the effective layer is: 夕 物 : : : : : :) The lm〇1/° piece is used to make a laminated ceramic capacitor K (sample K). The β-open/same strip, the ceramic material constituting the gap portion, contains BaTi〇3 in a ratio of 99% to 1%, and the ratio of lm〇l% contains z soil composition of 1 〇〇 mol%, which is used. M. ^ ί ί ί ί ί ί ί ί ί ί ί 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶With the laminated ceramic capacitor] 2

情形相同條件,製作積層陶瓷電容器L(試料L)。 D 又’為了比較,構成間隙部之陶瓷材料,相對於以 99m〇1%之比例含有BaTi〇3, lm〇1%之比例含有?! 的主 成分為loo mol%,係使用以lm〇1%之比例接合叫〇3作為 添加物的陶竞材料(與該有效層部用陶:是材料相同之材 料)’其他則以與該積層陶£電容器!之情形相同條件,製 作積層陶瓷電容器Μ(試料M)。 接著,針對該實施例3之積層陶瓷電容器(試料口、】、 K、L及比較例3之積層陶究電容器(試料進行施加 0-5V直桃電壓之測試,以電阻值在ι 以下之積層 陶瓷電容器為不良品,其他則為良品進行選別。 接著針對選別後之良品進行耐濕測試以確認财濕性。 測忒條件係以溫度為125。(3、濕度為95%RH、施加5V 直流電壓、保持時@ 144小時’㈣】試後施加贈之直流 電壓’將電阻值在…服印以下者判定為耐濕不良。 31 200908043 表^^„施例3之積層㈣電容 L及比杈例3之積層陶瓷電容 叶) 個,所調查之耐濕測試前的選別不良=:)…。。 各⑽個所調查之耐濕測試不良率^量;^後之良品 ----- MgO摻合比例 (mol%) L衣>3』 ----, T 1 耐濕測試前之不良率 耐濕測試不良率 試料I — (實施例) — 1.5 0.20% 0% 试料J 一J實施例) 1.75 0% 0% 試料K 一施例) 2 ___ 0.40% 0% 試料L 一施例) 2.5 0.40% 8% 5式料Μ 生較例3) 1 0.40% 19% 如表3所示,已確認實施例3之積層陶瓷電容器(試 料)I、K、L及比較例3之積層陶瓷電容器(試料)M之耐濕 剩試前的不良率雖大致同等,但耐濕測試不良率方面實施 例3之試料I、K、L則大幅低於比較例3之試料Μ。 又,Mg◦之添加量為〗75m〇i%之實施例之試料j的 情形,财濕測試前之不良率為。,财濕測試後之不良率 亦為0%。 又,MgO之添加量為1 5m〇i%之實施例之試料I的情 32 200908043 才/愚測喊前之不良率雖為0.20%,但耐濕測試後之不 良方In the same manner, a multilayer ceramic capacitor L (sample L) was produced. D. In order to compare, the ceramic material constituting the gap portion contains BaTi〇3 in a ratio of 99% to 1%, and the ratio of lm〇1% is contained. ! The main component is loo mol%, which is a pottery material that is used as an additive in the ratio of lm〇1% (the material used in the active layer: the same material) 'others' with the laminate Tao Capacitor! In the same condition, a laminated ceramic capacitor crucible (sample M) was produced. Next, the multilayer ceramic capacitors of the third embodiment (sample port, ), K, L, and the laminated ceramic capacitor of Comparative Example 3 were subjected to a test of applying a 0-5 V straight peach voltage to a laminate having a resistance value of ι or less. The ceramic capacitor is a defective product, and the others are selected for good quality. Then, the moisture resistance test is performed on the selected product to confirm the moisture property. The temperature measurement is 125. (3, humidity is 95% RH, and 5V DC is applied. Voltage, hold time @ 144 hours '(4)】 Apply the DC voltage after the test. 'The resistance value is determined to be poor in moisture resistance after the service is printed. 31 200908043 Table ^^„The layer (4) capacitance L and ratio of Example 3 Example 3 laminated ceramic capacitors), the poorly selected before the moisture resistance test =:)... Each of the (10) investigated moisture resistance test failure rate ^ quantity; ^ after the good ----- MgO blend Proportion (mol%) L clothes>3′′ ----, T 1 Poorness rate before moisture resistance test Poorness test rate Test sample I — (Example) — 1.5 0.20% 0% Sample J J implementation Example) 1.75 0% 0% sample K a case) 2 ___ 0.40% 0% sample L a case) 2.5 0.4 0% 8% of the following materials: 3) 1 0.40% 19% As shown in Table 3, the multilayer ceramic capacitors (samples) I, K, L of Comparative Example 3 and the multilayer ceramic capacitor of Comparative Example 3 were confirmed ( Sample No.) The moisture failure rate before the test was substantially the same, but the samples I, K, and L of Example 3 were significantly lower than the sample of Comparative Example 3 in terms of the moisture resistance test failure rate. In the case of the sample j of the example of the sample of 75 m〇i%, the defect rate before the test of the wetness and moisture test. The defect rate after the test of the wetness test was also 0%. Further, the amount of addition of MgO was 15 m〇i%. The sample of the example I of the case 32 200908043 The odds ratio before the / fool test is 0.20%, but the bad side after the moisture resistance test

^ 之添加量為2mol%之實施例之試料K 月耐濕測試前之不良率雖為0.40%,但耐濕測試後 之不良率亦為0%。 方面’已確認MgO之添加量為2.5mol%之實施例 之試剩> L @ 的情形’耐濕測試前之不良率雖為0.40%,但耐 :式之不良率為8% ’雖大幅低於比較例3之試料Μ ’ 、相車又於滿足本發明之要件之其他試料工、】、κ,則耐濕 测試不良率變高。 —y又,比較例3之試料Μ中,觀察到諸多即使是耐濕測 /後被判疋為良品者’測試後之電阻值已較測試前降低。 上述各實施形態及實施例卜2中,雖以構成有效層部 未含Mg之情形為例作說明,比較例3中則以構成 有效層部之陶曼含# Mg之情形為例作說明,但與構成有 ^層部之陶竟是否含有Mg無關,藉由使富含Mg層之Mg 3有率在本發明既定範圍内高於有效層部< 叫含有率, 即可得到本發明之基本效果。 此外上述實施形_及實施例中,雖以積層陶堯電容 :為例作說明,但本發明並不限於積層_容器,亦可 廣泛應用於具備含有Ni之内部雷拉/,, 卩電極例如積層熱敏電阻或 積層電感器等各種積層陶瓷電子零件。 本發明進一步在其他之點亦不 ^ * 不限於上述實施例,有關 陶瓷層與内部電極之積層形態或 ,01 飞積層數、構成有效層部或 側面側、端面側間隙部之陶蝥Μ ^ 尤材枓的種類、及含有Ni之 33 200908043 内部電極㈣的組Μ ’在本發明之冑圍内可作各種應 用、或加以變形。 如以上所述,根據本發明即能提供可提升具有將内部 電極透過陶瓷層設置於陶瓷燒結體中之構造之積層陶瓷電 子零件的耐濕可靠性,即使在小型化之情況下亦對耐濕性 之可#度高的積層陶瓷電子零件。 因此,本發明適合利用在使用於各種用途之積層陶瓷 電容器、積層熱敏電阻、積層電感器等各種積層陶瓷電子 零件。 【圖式簡單說明】 圖1係表示本發明實施形態1之積層陶瓷電子零件(積 層陶瓷電容器)的立體圖。 圖2係圖1之A—a線截面圖。 圖3係圖1之b — b線截面圖。 圖4係用以說明本發明實施形態1之積層陶瓷電容器 之構成的圖。 圖5係用以說明本發明實施形態1之積層陶瓷電容器 之作用的要部截面圖。 圖6(a)、(b)、(幻係表示本發明實施形態1之積層陶曼 電容器之製造方法的圖。 圖7係表示本發明實施形態2之積層陶瓷電容器之構 成的側面截面圖。 圖8係用以說明本發明實施形態2之積層陶瓷電容器 之構成的圖。 34 200908043 圖9係表示本發明實施形態3之積層陶瓷電容器之構 成的側面截面圖。 圖1 0係用以說明本發明實施形態3之積層陶瓷電容器 之構成的圖。 圖11(a)、(b)係表示本發明實施形態3之積層陶瓷電 容器之製造方法的圖。 【主要元件符號說明】 1 :第1内部電極 2 :第2内部電極 3 :陶瓷層 3 a :有效層部 3b :外層 I 0 :陶瓷燒結體 II :陶瓷燒結體之第1端面 12 :陶瓷燒結體之第2端面 13b :垂直投影區域 、 21 :陶瓷燒結體之第1側面 22 :陶瓷燒結體之第2側面 3 1 :第1外部端子電極 32 :第2外部端子電極 41 :陶竟未加工片 42 :導電性膏 42p :内部電極圖案 43 :陶瓷膏 35 200908043 GE :端面側間隙部 GE1 :端面側間隙部與第1、The sample of the example in which the amount of addition was 2 mol% was 0.40% before the moisture resistance test, but the defect rate after the moisture resistance test was also 0%. In the case of the case where the amount of addition of MgO was 2.5 mol%, the case of L @ '@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@ When the sample Μ ' of Comparative Example 3 and the other vehicle, κ, which meets the requirements of the present invention, the moisture resistance test failure rate is high. - y In addition, in the sample of Comparative Example 3, it was observed that even if it was judged to be a good product after moisture resistance/test, the resistance value after the test was lower than before the test. In each of the above-described embodiments and examples, the case where the effective layer portion does not contain Mg is described as an example, and in the comparative example 3, the case where the effective layer portion is added to the Taman is described as an example. However, regardless of whether or not the ceramic constituting the layer portion contains Mg, the present invention can be obtained by making the Mg 3-rich rate of the Mg-rich layer higher than the effective layer portion < Basic effect. Further, in the above-described embodiment and the embodiment, although the laminated ceramic capacitor is used as an example, the present invention is not limited to the laminated container, and can be widely applied to an internal laser/Ni electrode having Ni. Various laminated ceramic electronic parts such as laminated thermistors or laminated inductors. Further, the present invention is not limited to the above embodiment, and the laminated form of the ceramic layer and the internal electrode or the number of the 01 accumulated layers, the effective layer portion or the side surface side, and the end surface side gap portion ^ The type of eucalyptus and the group containing Ni 33 200908043 internal electrode (4) can be used in various applications or modified within the scope of the present invention. As described above, according to the present invention, it is possible to provide moisture resistance reliability of a laminated ceramic electronic component having a structure in which an internal electrode is transmitted through a ceramic layer in a ceramic sintered body, and is resistant to moisture even in the case of miniaturization. The high-quality multilayer ceramic electronic parts. Therefore, the present invention is suitable for use in various laminated ceramic electronic parts such as multilayer ceramic capacitors, laminated thermistors, and laminated inductors used in various applications. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a laminated ceramic electronic component (layered ceramic capacitor) according to a first embodiment of the present invention. Figure 2 is a cross-sectional view taken along line A-a of Figure 1. Figure 3 is a cross-sectional view taken along line b-b of Figure 1. Fig. 4 is a view for explaining the configuration of a multilayer ceramic capacitor according to Embodiment 1 of the present invention. Fig. 5 is a cross-sectional view of an essential part for explaining the action of the multilayer ceramic capacitor according to the first embodiment of the present invention. 6(a) and 6(b) are diagrams showing a method of manufacturing a multilayer ceramic capacitor according to a second embodiment of the present invention. Fig. 7 is a side cross-sectional view showing a configuration of a multilayer ceramic capacitor according to a second embodiment of the present invention. Fig. 8 is a side view showing a configuration of a multilayer ceramic capacitor according to a second embodiment of the present invention. Fig. 9 is a side cross-sectional view showing a configuration of a multilayer ceramic capacitor according to a third embodiment of the present invention. Fig. 11 (a) and (b) are views showing a method of manufacturing a multilayer ceramic capacitor according to a third embodiment of the present invention. [Description of main component symbols] 1: First internal Electrode 2: second internal electrode 3: ceramic layer 3a: effective layer portion 3b: outer layer I0: ceramic sintered body II: first end face 12 of ceramic sintered body: second end face 13b of ceramic sintered body: vertical projection region, 21: the first side surface 22 of the ceramic sintered body: the second side surface 3 1 of the ceramic sintered body: the first external terminal electrode 32: the second external terminal electrode 41: the ceramic unprocessed sheet 42: the conductive paste 42p: the internal electrode pattern 43: Ceramic paste 35 2 00908043 GE : End face side gap part GE1 : End face side gap part and 1st

Gs :侧面側間隙部 GS1 :側面側間隙部與第1、 L :切割線Gs : side side gap portion GS1 : side side gap portion and first, L: cutting line

Mr :富含Mg區域 2内部電極鄰接之區域 2内部電極鄰接之區域 36Mr : rich in Mg area 2 area where the internal electrodes are adjacent 2 area adjacent to the internal electrodes 36

Claims (1)

200908043 十、申請專利範圍: 1、一種積層陶瓷電子零件,具備: 陶兗燒結體,係複數個陶竟層所積層 相對向之第1側面及坌9 具有彼此 P 第面、及彼此相對向之第〗迪品 及第2端面; 弟1端面 第1内部電極,係形成於令 該第i端面,且含#Ni亥陶光燒結體内部並引出至 第2内邓電極,係於該陶竟燒結體内部 疋之該陶瓷層盥呤笙成為透過特 “ f亥第1内部電極相對向,並引出至兮第2 立而面,且含有Ni ; 山王忒弟2 弟i外部端子電極,传 端面,並的第…士 陶竟燒結體之該第1 ,、該弟1内部電極電氣連接,·以及 第2外部端子電極,係形成於 端面’並與該第2内部電 £,體之该第2 外部端子電極不同之雷 忠按於與該第i ^ J疋電位,其特徵在於: 該陶瓷燒結體包含: 該陶瓷層之中挾持於 極且有助於形成電容的有效=:極及該第2内部電 存在於該第1、第9 Bn* t m 1 - 内4電極之側部與該陶瓷焯& # 之弟1、第2側面之間、 』文麂結體 結體之第1、第2側 ”有效層部之側部與該陶瓷燒 之間的侧面側間隙部; 使该側面側間隙部 鄰接之區域為Mg濃度高於支'層亥弟1、# 2内部電極 2、如申請專利範圍第;效層部的富含Mg區域。 員之積層陶瓷電子零件,其中, 37 200908043 使紹則面側間隙部中分別位於與該第i、帛 同南度之區域為該富含Mg區域。 部電極相 3、 如申請專利範圍第1項之積層陶瓷電子零件甘 使該側面側間隙部整體為該富含Mg區域電子零件,其中, 4、 如申請專利範圍第1至3項中任一項 子零件’其中’該陶瓷燒結體包含存在於該第電 :電極之端部與該陶竟燒結體之第卜第2端面之間、内 X有效層部之端部與該陶瓷燒結體 及 的端面側間隙部; # &第面之間 使該端面側間隙部之中至少與該第i、第2内部電極 ^之區域為撾§濃度高於該有效層部的富含Mg區域。 5、如申請專利範圍第i至3項中任一項之積層陶瓷電 ^零件,其中,使該第1、第2内部電極中較最外層之内 邛電極外側之陶瓷層之該側面側間隙部之垂直投影區域、 及該端面側間隙部之垂直投影區域的至少一者,為濃 度尚於該有效層部的富含Mg區域。 6、如申請專利範圍第4項之積層陶瓷電子零件,其中, 使《亥第1、第2内部電極中較最外層之内部電極外側之陶 資*層之該側面側間隙部之垂直投影區域、及該端面侧間隙 邛之垂直投影區域的至少一者,為Mg濃度高於該有效層 部的富含Mg區域。 7、如申請專利範圍第1至3項中任一項之積層陶瓷電 子零件,其中’使構成該富含Mg區域之陶瓷材料之主成 分為lOOmol%的Mg添加比例,相較於構成該有效層部之 38 200908043 陶兗材料之主成分為100mo_ Mg添加比例多〇5 1 .Omol%。 8、 如申請專利範圍第4項之積層陶竟電子零件,其中, 使構成該富含Mg區域之陶竟材料之主成分為⑽则⑼的 Mg添加比例,相較於構成該有效層部之陶竟材料之主成 分為lOOmol%的Mg添加比例多〇」〜} 〇m〇i%。 9、 如申請專利範圍第5項之積層陶竟電子零件,其中, 使構成該富含Mg區域之陶莞材料之主成分為嶋。則 Mg添加比例’相較於構成該有效層部之陶竟材料之主成 分為lOOmol%的Mg添加比例多ο」—〇福%。 1〇、如中請專利範圍第6項之積層陶究電子零件,其 中,使構成該富含Mg區姑夕隐e u如丨 > 丄 §匕域之陶瓷材料之主成分為100m〇l% g〜、加比例;j:目較於構成該有效層部之陶究材料之主 成分為1〇〇1"〇丨%的蚴添加比例多O.Si.Omol%。200908043 X. Patent application scope: 1. A laminated ceramic electronic component, comprising: a ceramic sintered body, wherein the plurality of ceramic layers are opposite to each other, and the first side and the 坌9 have the opposite sides of each other and opposite to each other. The first inner electrode of the first end face of the brother 1 is formed on the ith end face, and contains the inside of the #Ni Hai ceramic sintered body and is led out to the second inner Deng electrode, which is attached to the ceramic body. The ceramic layer 疋 in the inner portion of the sintered body is transmitted through the first inner electrode of the "fhai", and is led to the second surface of the crucible, and contains Ni; the external terminal electrode of the mountain brother 2, the end face The first part of the Shou ceramics sintered body, the internal electrode of the younger brother 1 is electrically connected, and the second external terminal electrode is formed on the end face 'and the second internal electric body, the body 2 The external terminal electrode is different from the potential of the ith ^ J, and the ceramic sintered body comprises: the ceramic layer is held at the pole and contributes to the formation of a capacitance =: The second internal electricity exists in the first and the ninth B n* tm 1 - the side of the inner 4 electrode and the side of the ceramic layer amp&#1, the second side, and the side of the effective layer of the first and second sides of the corpus callosum a side-side gap portion between the ceramics; a region in which the side-side gap portion is adjacent is a Mg concentration higher than that of the branch layer, the inner electrode 2, and the inner electrode 2, as in the patent application range; Mg area. The laminated ceramic electronic component of the member, wherein, 37 200908043, the region of the surface-side gap portion is located in the region equal to the i-th and the south, and is the Mg-rich region. The electrode layer 3, the multilayer ceramic electronic component of the first aspect of the patent application, the side side gap portion as a whole is the Mg-rich region electronic component, wherein, as in any one of claims 1 to 3 a part of the ceramic sintered body comprising: the end portion of the first electric effective electrode portion between the end portion of the first electric electrode and the second end surface of the ceramic sintered body; and the ceramic sintered body The end face side gap portion; # & between the first faces, at least the region of the i-th and second inner electrodes of the end face-side gap portion is a Mg-rich region having a concentration higher than the effective layer portion. 5. The laminated ceramic electrical component according to any one of the first to third aspect, wherein the side surface side gap of the ceramic layer outside the innermost electrode of the outermost outer layer of the first and second inner electrodes is obtained. At least one of the vertical projection region of the portion and the vertical projection region of the end surface side gap portion is a Mg-rich region having a concentration still existing in the effective layer portion. 6. The laminated ceramic electronic component of claim 4, wherein the vertical projection area of the side gap portion of the outer layer of the inner electrode of the innermost electrode of the first and second inner electrodes is made. And at least one of the vertical projection regions of the end face side gap 为 is a Mg-rich region having a Mg concentration higher than the effective layer portion. 7. The laminated ceramic electronic component according to any one of claims 1 to 3, wherein 'the ratio of Mg added to the main component constituting the Mg-rich ceramic material is 100% by mol, which is effective compared to the composition. 38 of the layer 200908043 The main component of the pottery material is 100mo_ Mg added in a proportion of more than 5 1 .Omol%. 8. The laminated ceramic electronic component according to item 4 of the patent application, wherein the main component of the ceramic material rich in the Mg region is (10) (9), and the Mg addition ratio is compared with the effective layer portion. The main component of the ceramic material is lOOmol% of Mg added in a proportion of more than 〇"〇} 〇m〇i%. 9. The laminated ceramic electronic component of claim 5, wherein the main component of the ceramic material rich in the Mg region is 嶋. Then, the Mg addition ratio ' is more than the main component of the ceramic material constituting the effective layer portion, and the Mg addition ratio is more than 5%. 1. In the case of the laminated ceramics electronic component of the sixth item of the patent scope, the main component of the ceramic material constituting the Mg-rich zone is 100 丨 eu 丨 丨 匕 匕 匕 匕 匕 匕 匕 100 100 100 100 % % % g~, plus ratio; j: the main component of the ceramic material constituting the effective layer portion is 1〇〇1"〇丨% of the cerium addition ratio is more than O.Si.Omol%. 二如:請專利範圍第…項中任一項之積層陶究 Γ 中,該富纟叫區域巾%濃度具有從陶竟 k結體之外側向内側降低的濃度梯度。 j2如申印專利範圍第4項之積層陶瓷電子零件,其 2 °亥虽含Mg區域巾Mg濃度具有從陶竟燒結體之外側 向内側降低的濃度梯度。 13、 如申請專利範圍第 中,該富含Mg區域中Mg 向内側降低的濃度梯度。 14、 如申請專利範圍第 5項之積層陶瓷電子零件,其 濃度具有從陶瓷燒結體之外側 6項之積層陶瓷電子零件,其 39 200908043 中,該富含Mg區域中Mg濃度具有從陶瓷燒結體之外側 向内侧降低的濃度梯度。 十一、圖式: 如次頁 40For example, in the laminated ceramics 任 of any of the patent scopes, the concentration of the rich scented area towel has a concentration gradient that decreases from the lateral side to the inner side of the terracotta k-body. J2 is a laminated ceramic electronic component according to item 4 of the patent application scope, wherein the Mg concentration of the Mg zone towel at 2 °H has a concentration gradient which decreases from the side to the inner side of the ceramic body. 13. In the scope of the patent application, the concentration gradient in which Mg is reduced to the inside in the Mg-rich region. 14. The laminated ceramic electronic component of claim 5, wherein the concentration has a laminated ceramic electronic component from the outer side of the ceramic sintered body, and in 39 200908043, the Mg concentration in the Mg-rich region has a ceramic sintered body. The concentration gradient of the outer side decreases to the inner side. XI. Schema: as the next page 40
TW097117399A 2007-06-08 2008-05-12 Multi-layered ceramic electronic component TWI406309B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153110 2007-06-08
JP2008114310A JP4591537B2 (en) 2007-06-08 2008-04-24 Multilayer ceramic electronic components

Publications (2)

Publication Number Publication Date
TW200908043A true TW200908043A (en) 2009-02-16
TWI406309B TWI406309B (en) 2013-08-21

Family

ID=40180615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117399A TWI406309B (en) 2007-06-08 2008-05-12 Multi-layered ceramic electronic component

Country Status (4)

Country Link
JP (2) JP4591537B2 (en)
KR (1) KR101035882B1 (en)
CN (1) CN101320624B (en)
TW (1) TWI406309B (en)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4591537B2 (en) * 2007-06-08 2010-12-01 株式会社村田製作所 Multilayer ceramic electronic components
JP5230565B2 (en) * 2009-03-27 2013-07-10 京セラ株式会社 Wiring board
JP5275918B2 (en) * 2009-06-24 2013-08-28 Tdk株式会社 Multilayer ceramic electronic components
CN102640239B (en) * 2009-12-11 2015-06-17 株式会社村田制作所 Lamination type ceramic electronic part
KR101141457B1 (en) * 2010-12-08 2012-05-04 삼성전기주식회사 The multi-layerd ceramic condenser and fabricating method using thereof
KR101188032B1 (en) * 2011-03-09 2012-10-08 삼성전기주식회사 A multilayer ceramic capacitor and a method for manufacturing the same
KR101141342B1 (en) * 2011-03-09 2012-05-03 삼성전기주식회사 A multilayer ceramic capacitor and a method for manufactuaring the same
JP5852321B2 (en) * 2011-04-15 2016-02-03 太陽誘電株式会社 Multilayer ceramic capacitor
JP5838927B2 (en) 2011-10-14 2016-01-06 Tdk株式会社 Multilayer ceramic electronic components
JP5900449B2 (en) * 2012-12-28 2016-04-06 株式会社村田製作所 Method for manufacturing ceramic electronic component and ceramic electronic component
JP6024483B2 (en) * 2013-01-29 2016-11-16 株式会社村田製作所 Multilayer ceramic electronic components
JP6439551B2 (en) * 2014-05-21 2018-12-19 株式会社村田製作所 Multilayer ceramic capacitor
JP6627916B2 (en) * 2014-05-21 2020-01-08 株式会社村田製作所 Multilayer ceramic capacitors
JP2016001723A (en) * 2014-05-22 2016-01-07 株式会社村田製作所 Multilayer ceramic capacitor
JP2016136561A (en) * 2015-01-23 2016-07-28 Tdk株式会社 Multilayer capacitor
JP2016149484A (en) * 2015-02-13 2016-08-18 Tdk株式会社 Multilayer capacitor
JP6867745B2 (en) * 2015-02-13 2021-05-12 Tdk株式会社 Multilayer capacitor and mounting structure of multilayer capacitor
JP2016152379A (en) 2015-02-19 2016-08-22 株式会社村田製作所 Multilayer capacitor and method of manufacturing the same
JP6346910B2 (en) * 2015-05-29 2018-06-20 太陽誘電株式会社 Multilayer ceramic capacitor and manufacturing method thereof
KR101854519B1 (en) 2015-05-29 2018-05-03 다이요 유덴 가부시키가이샤 Multilayer ceramic capacitor and method for manufacturing the same
JP6370744B2 (en) * 2015-06-24 2018-08-08 太陽誘電株式会社 Multilayer ceramic capacitor and manufacturing method thereof
JP6665438B2 (en) * 2015-07-17 2020-03-13 株式会社村田製作所 Multilayer ceramic capacitors
KR101701049B1 (en) * 2015-08-07 2017-01-31 삼성전기주식회사 Multi-layered ceramic electronic component and manufacturing method of the same
JP6110927B2 (en) * 2015-12-04 2017-04-05 太陽誘電株式会社 Multilayer ceramic capacitor
JP6487364B2 (en) * 2016-03-30 2019-03-20 太陽誘電株式会社 Manufacturing method of multilayer ceramic electronic component
JP2018037492A (en) 2016-08-30 2018-03-08 太陽誘電株式会社 Multilayer ceramic capacitor and manufacturing method thereof
JP6996854B2 (en) 2017-03-08 2022-01-17 太陽誘電株式会社 Multilayer ceramic capacitors and their manufacturing methods
JP7238086B2 (en) * 2017-03-08 2023-03-13 太陽誘電株式会社 Multilayer ceramic capacitor
TWI814730B (en) 2017-07-19 2023-09-11 日商太陽誘電股份有限公司 Multilayer ceramic capacitor and manufacturing method thereof
JP2019021816A (en) * 2017-07-19 2019-02-07 太陽誘電株式会社 Multilayer ceramic capacitor and method for manufacturing the same
JP7058987B2 (en) * 2017-11-27 2022-04-25 太陽誘電株式会社 Manufacturing method of multilayer ceramic capacitors and multilayer ceramic capacitors
US10903006B2 (en) 2017-12-07 2021-01-26 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic capacitor
JP7424740B2 (en) 2018-05-18 2024-01-30 太陽誘電株式会社 Multilayer ceramic capacitor and its manufacturing method
JP7266969B2 (en) * 2018-05-21 2023-05-01 太陽誘電株式会社 Manufacturing method for multilayer ceramic electronic component
JP6595670B2 (en) * 2018-07-10 2019-10-23 太陽誘電株式会社 Multilayer ceramic capacitor
JP6596547B2 (en) * 2018-07-10 2019-10-23 太陽誘電株式会社 Multilayer ceramic capacitor
KR102381271B1 (en) 2018-07-26 2022-03-30 삼성전기주식회사 Multi-layered ceramic capacitor
KR102141217B1 (en) 2018-07-26 2020-08-04 삼성전기주식회사 Multi-layered ceramic capacitor
KR102121580B1 (en) 2018-10-02 2020-06-10 삼성전기주식회사 Multi-layered ceramic capacitor
KR102500112B1 (en) 2018-10-02 2023-02-15 삼성전기주식회사 Multi-layered ceramic capacitor
JP7209072B2 (en) * 2019-06-17 2023-01-19 太陽誘電株式会社 Multilayer ceramic capacitor
JP6766225B2 (en) * 2019-06-17 2020-10-07 太陽誘電株式会社 Multilayer ceramic capacitors
JP6980873B2 (en) * 2019-06-17 2021-12-15 太陽誘電株式会社 Multilayer ceramic capacitors
KR102603410B1 (en) * 2019-06-28 2023-11-17 가부시키가이샤 무라타 세이사쿠쇼 Multilayer electronic component and method for manufacturing multilayer electronic component
KR102789039B1 (en) 2019-07-10 2025-04-01 삼성전기주식회사 Multilayered capacitor and board having the same mounted thereon
JP6816225B2 (en) * 2019-07-29 2021-01-20 太陽誘電株式会社 Multilayer ceramic capacitors
KR102671969B1 (en) * 2019-08-16 2024-06-05 삼성전기주식회사 Multilayered capacitor and board having the same mounted thereon
JP7237806B2 (en) * 2019-12-02 2023-03-13 株式会社村田製作所 Multilayer ceramic capacitor
KR102762874B1 (en) 2019-12-24 2025-02-07 삼성전기주식회사 Multi-layered ceramic capacitor and method of manufacturing the same
KR102736492B1 (en) 2019-12-27 2024-11-29 가부시키가이샤 무라타 세이사쿠쇼 Multilayer ceramic capacitor
US11450484B2 (en) * 2019-12-27 2022-09-20 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
US11508524B2 (en) * 2019-12-27 2022-11-22 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
US11373810B2 (en) * 2019-12-27 2022-06-28 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
JP7575914B2 (en) * 2019-12-27 2024-10-30 株式会社村田製作所 Multilayer Ceramic Capacitors
KR102575247B1 (en) * 2019-12-27 2023-09-06 가부시키가이샤 무라타 세이사쿠쇼 Multilayer ceramic capacitor
US11367573B2 (en) * 2019-12-27 2022-06-21 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor
KR102414829B1 (en) 2020-07-29 2022-06-30 삼성전기주식회사 Multi-layered ceramic capacitor
CN120019458A (en) * 2022-11-24 2025-05-16 株式会社村田制作所 Multilayer Ceramic Capacitors
CN115966401B (en) * 2023-01-03 2025-06-27 苏州昀冢电子科技股份有限公司 Capacitor and method for manufacturing capacitor
JPWO2024224760A1 (en) * 2023-04-26 2024-10-31
WO2025018007A1 (en) * 2023-07-19 2025-01-23 株式会社村田製作所 Multilayer ceramic electronic component
EP4730378A1 (en) * 2023-07-19 2026-04-22 Murata Manufacturing Co., Ltd. Multilayer ceramic electronic component
CN119968689A (en) * 2023-08-18 2025-05-09 株式会社村田制作所 Multilayer Ceramic Capacitors
WO2025253832A1 (en) * 2024-06-06 2025-12-11 株式会社村田製作所 Substrate built into electronic component and method for manufacturing substrate built into electronic component

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243254B1 (en) * 1998-08-11 2001-06-05 Murata Manufacturing Co., Ltd. Dielectric ceramic composition and laminated ceramic capacitor using the same
JP2000340450A (en) * 1999-05-26 2000-12-08 Kyocera Corp Multilayer ceramic capacitor and method of manufacturing the same
JP4688326B2 (en) * 2001-03-27 2011-05-25 京セラ株式会社 Ceramic laminate and manufacturing method thereof
JP2005101301A (en) * 2003-09-25 2005-04-14 Kyocera Corp Multilayer electronic component and manufacturing method thereof
JP2006210590A (en) * 2005-01-27 2006-08-10 Kyocera Corp Multilayer ceramic capacitor and manufacturing method thereof
JP4146858B2 (en) * 2005-08-26 2008-09-10 Tdk株式会社 Multilayer capacitor
JP4591537B2 (en) * 2007-06-08 2010-12-01 株式会社村田製作所 Multilayer ceramic electronic components

Also Published As

Publication number Publication date
KR101035882B1 (en) 2011-05-20
JP2010103566A (en) 2010-05-06
CN101320624A (en) 2008-12-10
KR20080108012A (en) 2008-12-11
CN101320624B (en) 2011-07-20
JP2009016796A (en) 2009-01-22
JP4591537B2 (en) 2010-12-01
JP4930609B2 (en) 2012-05-16
TWI406309B (en) 2013-08-21

Similar Documents

Publication Publication Date Title
TW200908043A (en) Multi-layered ceramic electronic component
JP5799948B2 (en) Ceramic electronic component and method for manufacturing the same
TW414898B (en) Electronic device and its production
TWI269324B (en) Electronic device and the production method
CN104137193B (en) Electronic unit
JP5971236B2 (en) Ceramic electronic components and glass paste
TW470980B (en) Monolithic ceramic electronic component
JP5794222B2 (en) Ceramic electronic components
TWI245299B (en) Laminated ceramic capacitor
CN101636798B (en) Laminated positive temperature coefficient thermistor
TW200949867A (en) Ceramic element
TWI333664B (en) Production method of multilayer ceramic electronic device
JP7759731B2 (en) Ceramic electronic component and manufacturing method thereof
CN103247437B (en) Ceramic electronic components
TW200908041A (en) Dielectric ceramic and layer-built ceramic capacitor
JP2008177611A (en) Surface mount negative thermistor
JP7255510B2 (en) Laminated coil parts
CN110310830A (en) Monolithic ceramic electronic component
CN103247438B (en) Ceramic electronic components and manufacture method thereof
JP4345071B2 (en) Multilayer ceramic capacitor and method for manufacturing the multilayer ceramic capacitor
TWI285381B (en) Multilayer ceramic capacitor
TWI297504B (en) Multilayer chip varistor
CN113053620A (en) Laminated coil component
TW200411680A (en) Manufacturing method of laminated PTC (positive temperature coefficient) thermistor
CN1841598B (en) Multilayer ceramic electronic device and method of production of the same