200908122 九、發明說明： 【發明所屬之技術領域】 本發明大體上係關於基板處理’更精確地，係關於用 .以清潔~基板邊緣之方法與設備。 【先前技術】 在製造半導體裝置的過程中會使用到基板。在處理期 間’基板邊緣會變髒，因而對基板上之半導體裝置產生不 ζ, 好的影響。習用系統是在基板旋轉時，以一研磨薄膜或研 磨帶來接觸基板邊緣，藉以清潔基板。不過，基板邊緣也 可包含一切口，用來幫助基板在處理期間恰當的對準。習 用系統在清潔基板邊緣時並未考慮到此切口 .，且旋轉基板 時’因研磨帶撞擊可能導致切口損壞。因此需要一種可用 來清潔基板邊緣的改良方法與設備。 【發明内容】 在本發明之實施態樣中，提供用於拋光（polishing)一 基板邊緣之設備。該設備包含一椒光頭（a p〇lishing O head)’其包含一底墊，其中該底墊接觸該基板邊緣之寬度 大於該基板邊緣上一切口之寬度。在本發明某些其他實施 態樣中’提供用於拋光一基板邊緣之系統。該系統包含一 基板支樓件，其適於旋轉一基板；一抱光頭，其包含一底 ' 塾’其中該底墊接觸該基板邊緣之寬度大於該基板邊緣上 一切口之寬度；及一控制器’其適於控制該基板及該拋光 頭之旋轉。 在本發明之其他實施例十，提供用於拋光一基板邊緣 5 200908122 之方法。該方法包含旋轉一基板及將該基板之邊緣與一底 墊接觸，其中該底墊接觸該基板邊緣之寬度大於該基板邊 緣上一切口之寬度。 本發明之其他特性及實施態樣由下列詳細敘述、附加 的申請專利範圍、及伴隨的圖式將變得更加完整明白。 【實施方式】 本發明提供用於清潔及/或拋光一基板邊緣之改善的 方法與設備。舉例來說，當基板旋轉或以其他方式移動（例 如’振盪）時’基板邊緣可藉由應用透過一拋光墊或頭接觸 基板邊緣之研磨拋光墊或研磨拋光帶來拋光。根據本發 明，拋光或底墊之寬度可足夠大以致底墊橫越超出基板邊 緣中之切口寬度。此延伸的寬度可在基板邊緣拋光時防止 底塾進入及/或損壞切口。 參照第1圖，基板100可包含兩個主表面102、102’、 及邊緣104。基板100之各主表面102、102,可包含裝置區 域106、106’、及排除區域108、108’。（不過，兩個主表 Q 面1 02、1 02’典型僅有一個將包含一裝置區域及一排除區 域）。排除區域108、108’可充當裝置區域1〇6、106,及邊 緣104間之缓衝區。基板100之邊緣1 〇4可包含外部邊緣 110及斜角112、114。斜角112、114可位於外部邊緣110 及兩個主表面102、102’之排除區域108、1〇8’間。切口 Π6 可位於基板100之外部邊緣110中並用於在不同的處理步 驟（例如，微影、沈積、蝕刻、清潔等）期間對準/放置基板 100。本發明適於在不影響切口 116或裝置區域106、106’200908122 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to substrate processing 'more precisely, to methods and apparatus for cleaning ~ substrate edges. [Prior Art] A substrate is used in the process of manufacturing a semiconductor device. During the processing period, the edge of the substrate becomes dirty, which causes a good influence on the semiconductor device on the substrate. Conventional systems clean the substrate by contacting the edges of the substrate with a lapping film or abrasive belt as the substrate rotates. However, the edge of the substrate can also contain openings to help the substrate properly align during processing. The conventional system does not take this slit into consideration when cleaning the edge of the substrate. When the substrate is rotated, the slit may be damaged by the impact of the abrasive tape. There is therefore a need for an improved method and apparatus that can be used to clean the edges of a substrate. SUMMARY OF THE INVENTION In an embodiment of the invention, an apparatus for polishing a substrate edge is provided. The apparatus includes a peshing head that includes a bottom pad, wherein the bottom pad contacts the edge of the substrate to a width greater than the width of the opening on the edge of the substrate. In some other embodiments of the invention, a system for polishing the edge of a substrate is provided. The system comprises a substrate supporting member adapted to rotate a substrate; a holding head comprising a bottom 塾 ′ wherein the width of the bottom pad contacting the edge of the substrate is greater than the width of the opening on the edge of the substrate; and a control The device 'is adapted to control the rotation of the substrate and the polishing head. In other embodiments of the present invention, a method for polishing a substrate edge 5 200908122 is provided. The method includes rotating a substrate and contacting an edge of the substrate with a bottom pad, wherein the width of the bottom pad contacting the edge of the substrate is greater than the width of the opening on the edge of the substrate. Other features and embodiments of the invention will be apparent from the following detailed description, appended claims and appended claims. [Embodiment] The present invention provides an improved method and apparatus for cleaning and/or polishing the edge of a substrate. For example, when the substrate is rotated or otherwise moved (e.g., 'oscillated), the edge of the substrate can be polished by applying an abrasive polishing pad or abrasive polishing tape that passes through a polishing pad or head contacting the edge of the substrate. In accordance with the present invention, the width of the polishing or underpad can be sufficiently large that the underpad traverses beyond the width of the slit in the edge of the substrate. The width of this extension prevents the bottom sill from entering and/or damaging the kerf when the edge of the substrate is polished. Referring to Figure 1, the substrate 100 can include two major surfaces 102, 102', and an edge 104. Each of the major surfaces 102, 102 of the substrate 100 can include device regions 106, 106', and exclusion regions 108, 108'. (However, only one of the two main tables Q face 102, 102' typically contains one device area and one exclusion area). The exclusion areas 108, 108' can act as buffers between the device areas 1, 6, 106, and the edges 104. The edge 1 〇 4 of the substrate 100 can include an outer edge 110 and bevels 112, 114. The beveled corners 112, 114 may be located between the outer edge 110 and the exclusion regions 108, 1'8' of the two major surfaces 102, 102'. The slits 6 can be located in the outer edge 110 of the substrate 100 and used to align/place the substrate 100 during different processing steps (e.g., lithography, deposition, etching, cleaning, etc.). The present invention is suitable for not affecting the slit 116 or the device region 106, 106'
200908122 的情況下，清潔及/或拋光基板1 0 0之外部邊緣1 1 0與至少 一斜角112、114。在某些實施例中，排除區域108、108、 之全部或部分亦可加以清潔或拋光。 第2圖為用於拋光包含主表面1〇2、102，、及基板邊 緣1 04之基板1 〇〇之部分之系統200之一實施例之示意平 面圖。 第2圖之系統200包含三個拋光設備202，其各自包 含拋光頭204。不過，任何數目及類型的設備2〇2/頭2 〇4 可以任何可實行的組合使用。此外，在這類多個頭的實施 例中’各個頭204可使用不同配置或不同類型的拋光帶（例 如’不同粒度、材料、拉力 '壓力等）來接觸及拋光基板邊 緣104任何數目的頭204可並行、單獨、及/或以任何序 列使用。頭204可以不同位置及以不同定向配置（例如，對 準基板邊緣104、垂直基板邊緣1〇4、相對於基板邊緣1〇4 轉動角度等），以允許在某些實施例中由一墊推動（例 如，如第3圖所描繪）之拋光帶拋光基板1〇〇之邊緣1〇4 之不同刀。在某些實施例中，一或多個頭可適於環 繞或〜著基板邊緣1〇4振盪或移動㈠列如，對基板^㈧之一 正刀軸有角度地移位及’或相對於基1〇〇而圓周地移動) 以便拋光基板邊緣104之不同部分。…實施例中，一 或夕個頭204可適於連續或間歇地在不同部分間振盪。或 者’一或多㈣204可固定及/或僅在基板⑽未旋轉時調 整在尚有其他實施例中基板⑽寸保持固定，而一或 夕個頭204振盪（如上述）和圓周地環繞基板⑽旋轉。此 200908122In the case of 200908122, the outer edge 110 of the substrate 100 is cleaned and/or polished with at least one bevel 112, 114. In some embodiments, all or portions of the exclusion zones 108, 108 may also be cleaned or polished. Figure 2 is a schematic plan view of one embodiment of a system 200 for polishing a portion of a substrate 1 包含 comprising a major surface 1200, 102, and a substrate edge 104. The system 200 of Figure 2 includes three polishing apparatus 202, each of which includes a polishing head 204. However, any number and type of equipment 2〇2/head 2 〇4 can be used in any practicable combination. Moreover, in embodiments of such multiple heads, 'each head 204 can contact and polish any number of heads 204 of the substrate edge 104 using different configurations or different types of polishing tapes (eg, 'different grain size, material, tension' pressure, etc.). It can be used in parallel, separately, and/or in any sequence. The head 204 can be configured in different positions and in different orientations (eg, aligning the substrate edge 104, the vertical substrate edge 1〇4, the angle of rotation relative to the substrate edge 1〇4, etc.) to allow for pushing in a pad by some embodiments. The polishing tape (for example, as depicted in Fig. 3) polishes the different knives of the edge 1〇4 of the substrate 1〇〇. In some embodiments, one or more of the heads may be adapted to oscillate or move around the edge of the substrate or to move (a) a column, such as an angular displacement of the positive arbor of one of the substrates (h) and or relative to the base 1 〇〇 while moving circumferentially) to polish different portions of the substrate edge 104. In an embodiment, one or more heads 204 may be adapted to oscillate between different portions, either continuously or intermittently. Or 'one or more (four) 204 may be fixed and/or adjusted only when the substrate (10) is not rotated. In still other embodiments, the substrate (10) is kept fixed, and one or the other 204 is oscillated (as described above) and circumferentially rotated around the substrate (10). . This 200908122
移動可受程式化或使用者操作之控制器2〇5之指示支配， 其進一步在下文敘述。不同的頭2 04可用於不同的基板1〇〇 或不同類型的基板100。如上文所述，系統200可進一步 包含控制器205(例如，一程式化的電腦、一程式化的處理 器、一微控制器、一閘陣列、一邏輯電路、一嵌入式即時 處理器等），其可控制用於旋轉基板1〇〇之驅動器及/或用 於緊靠基板邊緣104推動拋光墊（第3圖）之致動器。注意 控制器205可耦合（例如，電地、機械地、氣動地、液壓地 等）至各複數個致動器。同樣地，控制器2〇5可適於接收來 自一或多個驅動器及/或致動器之回授訊號，其指示施加以 旋轉基板100(例如’旋轉支承基板100之真空卡盤）及/或 致動致動器緊靠基板1〇〇推動拋光塾之能量的量。這些回 授訊號可用於決定一特定的薄膜層何時已經移除及/或足 夠的拋光量是否已經發生。 如上文所提及，基板拋光可使用一或多個拋光設備 2 02執行。在一或多個實施例中，可使用複數個拋光設備 202，其中各拋光設備202可具有類似或不同的特徵及/或 機構。在後面的實例中，特定的拋光設備202可用於特定 的操作。舉例來說，一或多個拋光設備202可適於執行相 對粗糙的拋光及/或調整，而另外的一或多個拋光設備202 可適於執行相對精細的拋光及/或調整。拋光設備2 02可依 序使用，以便’舉例來說，一粗糙的拋光程序可在初始執 行’且一精細的拋光程序可隨後使用以依需要或根據拋光 配方調整一相對粗糙的拋光。複數個拋光設備202可位於 200908122 一單一室或模組中，如此處所示，或者，一或多個拋光設 備2 02可位於分開的室或模組中。當使用多個室時，可使 用機器人或另一類型的傳送機構以在室與室之間移動基板 100,以便在分開的室中之拋光設備202可依序或以其他方 式使用。 第3圖為用於拋光基板邊緣1〇4之拋光設備300之一 實施例之示意透視圖。拋光設備3 0 0可包含基板驅動器 ζ , 3 02(例如，伺服馬達、齒輪、皮帶、鏈等），其可裝配在底 座304上。支樓306(例如，真空卡盤）可麵合（例如，牢固 地）至基板驅動器302之一軸（未顯示）。舉例來說，支撐306 可支撐基板100。基板驅動器3 02可透過支撐306對基板 100之中心308或另一適當軸旋轉基板100。基板驅動器 302可連接至一基板驅動器控制單元，例如，控制器205, 舉例來說，其可控制基板1〇〇之角位移、角速度、及角加 速度。 此外，不同於某些可包含一或多個適於緊靠拋光帶 {J 318旋轉基板100之邊緣104之驅動滾輪（未顯示）及引導 滚輪（未顯示）之實施例（於下文敘述），使用真空卡盤之一 實施例之一優點為設備 3 0 0不需接觸欲拋光之基板邊緣 104。因此，粒子積聚在其他實施例中用於旋轉基板之驅動 滾輪上，及再沈積於基板邊緣上之可能性因而排除。 清潔滾輪之需要亦因而排除。進一步地，滾輪損壞或刮傷 邊緣之可能性亦因而排除。藉由將基板100支承於真空卡 盤中，在無顯著振動下之高速旋轉可因而達成。 9 200908122 拋光設備300可進一步包含拋光臂310，其在近乎正 切基板100之邊緣之水平平面中對準，並由框312支樓。 框312之一端可耦合至拋光頭驅動器309。在其他實施例 中，拋光臂3 1 0可相對於水平平面不同地對準，舉例來說， 垂直或以一角度。拋光臂310可包含拋光頭段314(「頭」）。 拋光頭3 14可包含底或拋光墊316及/或充氣墊。在任一實 例中’墊316及/或充氣墊可為軟性的及/或包含或形成符 合基板邊緣104之形狀之輪廓。舉例來說，拋光墊316可 為輪形，如此處所示。可使用其他形狀》拋光墊316可藉 由一致動器（例如，液壓致動器、氣動致動器、伺服馬達 等）（未顯示）朝向或遠離基板1〇〇移動。舉例來說，該致動 器可受控制器205控制。該致動器可在一所需角度間搖動 頭314，包含，舉例來說，+/-90度，從而以拋光帶318接 觸基板100之整個邊緣104»可使用其他角度。在操作中， 此係藉由當基板100旋轉時，環繞正切基板1〇〇之外部邊 緣110之一轴有角度地移位頭314，且必然地，一部分的 拋光帶318接觸並符合基板邊緣1〇4之輪廓來達成》或者， 一偏壓裝置（例如，彈簧）可用於將拋光墊316裝配至頭314 以提供彈性/動態的反壓給拋光墊316。拋光帶318可繞著 撤光頭314及引導滚輪320、322纏繞，並纏繞在拋光塾 316上方，且在線軸324、326間拉緊。線轴324、326可 分別由線軸驅動器3 2 8、3 3 0 (例如，飼服馬達）驅動。線轴 驅動器328、330可連續移動或編索引以精確控制來自，舉 例來說，線軸324、326，在拋光頭314上方前進以拋光基 10Movement may be governed by the instructions of the programmed or user operated controller 2〇5, which is further described below. Different heads 2 04 can be used for different substrates 1 or different types of substrates 100. As described above, system 200 can further include a controller 205 (eg, a stylized computer, a stylized processor, a microcontroller, a gate array, a logic circuit, an embedded instant processor, etc.) It can control the actuator for rotating the substrate 1 and/or the actuator for pushing the polishing pad (Fig. 3) against the substrate edge 104. Note that controller 205 can be coupled (e.g., electrically, mechanically, pneumatically, hydraulically, etc.) to each of a plurality of actuators. Likewise, the controller 2〇5 can be adapted to receive feedback signals from one or more drivers and/or actuators that are instructed to rotate the substrate 100 (eg, a vacuum chuck that rotates the support substrate 100) and/or Or actuating the amount of energy that the actuator pushes against the polishing pad. These feedback signals can be used to determine when a particular film layer has been removed and/or whether a sufficient amount of polishing has occurred. As mentioned above, substrate polishing can be performed using one or more polishing devices 102. In one or more embodiments, a plurality of polishing devices 202 can be utilized, wherein each polishing device 202 can have similar or different features and/or mechanisms. In the latter examples, a particular polishing apparatus 202 can be used for a particular operation. For example, one or more of the polishing apparatus 202 can be adapted to perform relatively rough polishing and/or adjustment, while the other one or more polishing apparatus 202 can be adapted to perform relatively fine polishing and/or adjustment. The polishing apparatus 02 can be used sequentially so that, for example, a rough polishing procedure can be performed initially and a fine polishing procedure can be used subsequently to adjust a relatively rough finish as needed or according to the polishing recipe. A plurality of polishing devices 202 can be located in a single chamber or module in 200908122, as shown herein, or one or more polishing devices 206 can be located in separate chambers or modules. When multiple chambers are used, a robot or another type of transport mechanism can be used to move the substrate 100 between the chambers so that the polishing apparatus 202 in separate chambers can be used sequentially or in other ways. Figure 3 is a schematic perspective view of one embodiment of a polishing apparatus 300 for polishing a substrate edge 1〇4. The polishing apparatus 300 can include a substrate driver ζ , 322 (e.g., servo motor, gear, belt, chain, etc.) that can be mounted on the base 304. A branch 306 (e.g., a vacuum chuck) can be joined (e.g., securely) to one of the axes of the substrate drive 302 (not shown). For example, the support 306 can support the substrate 100. The substrate driver 302 can rotate the substrate 100 through the support 306 to the center 308 of the substrate 100 or another suitable axis. The substrate driver 302 can be coupled to a substrate driver control unit, such as controller 205, which can control angular displacement, angular velocity, and angular acceleration of the substrate, for example. Moreover, unlike some embodiments (described below) that may include one or more drive rollers (not shown) and guide rollers (not shown) that are adapted to abut the edge 104 of the polishing tape {J 318, One advantage of one of the embodiments using a vacuum chuck is that the device 300 does not need to contact the substrate edge 104 to be polished. Therefore, the possibility of particle accumulation on the drive roller for rotating the substrate in other embodiments and redeposition on the edge of the substrate is thus eliminated. The need to clean the rollers is thus eliminated. Further, the possibility that the roller is damaged or scratched is thus excluded. By supporting the substrate 100 in the vacuum chuck, high-speed rotation without significant vibration can be achieved. 9 200908122 The polishing apparatus 300 can further include a polishing arm 310 that is aligned in a horizontal plane near the edge of the tangential substrate 100 and supported by the frame 312. One end of block 312 can be coupled to the polishing head driver 309. In other embodiments, the polishing arms 310 may be aligned differently relative to the horizontal plane, for example, perpendicular or at an angle. Polishing arm 310 can include a polishing head section 314 ("head"). The polishing head 3 14 can include a bottom or polishing pad 316 and/or an inflatable cushion. In either embodiment, the pad 316 and/or the inflatable cushion can be soft and/or include or form a contour that conforms to the shape of the substrate edge 104. For example, polishing pad 316 can be wheel shaped as shown herein. Other shapes may be used. The polishing pad 316 may be moved toward or away from the substrate 1 by an actuator (e.g., a hydraulic actuator, a pneumatic actuator, a servo motor, etc.) (not shown). For example, the actuator can be controlled by controller 205. The actuator can rock the head 314 at a desired angle, including, for example, +/- 90 degrees so that the entire edge 104 of the substrate 100 can be contacted with the polishing strip 318. Other angles can be used. In operation, by pivoting the head 314 about one of the outer edges 110 of the tangential substrate 1 when the substrate 100 is rotated, and inevitably, a portion of the polishing strip 318 contacts and conforms to the edge of the substrate 1 Alternatively, a biasing device (e.g., a spring) can be used to assemble the polishing pad 316 to the head 314 to provide an elastic/dynamic back pressure to the polishing pad 316. Polishing strip 318 can be wrapped around unwinding head 314 and guide rollers 320, 322 and wound over polishing crucible 316 with tension between spools 324, 326. The spools 324, 326 can be driven by spool drives 3 2 8 , 3 3 0 (eg, a feed motor), respectively. The spool drivers 328, 330 can be continuously moved or indexed to precisely control from, for example, the spools 324, 326, advancing over the polishing head 314 to polish the substrate 10
200908122 板邊緣1 〇 4之拋光帶3 1 8的量。依照所用的帶3 帶之粒度、旋轉速率、所需的拋光量等，基板 研磨帶318達15至150秒。可使用更長或更短 依照由致動器施加之力的量、所選的墊之 墊之充氣量、及/或帶上之拉力量，受控的壓力 拋光邊緣 1 04。因此，本發明提供邊緣拋光製 制，其可用於補償當由邊緣1 04移除材料時， 之不同的邊緣幾何及變化。 在一或多個實施例中，拋光帶3 1 8可由許 料製成，例如，氧化铭、氧化珍、礙化石夕等。 他材料。在某些實施例中，雖然可使用其他尺 研磨劑之尺寸範圍可，舉例來說，由約〇. 5微 微米，或0.1微米至1 0微米。雖然可使用其他拔 由約0.2英吋至約1. 5英吋範圍之拋光帶3 1 8 可使用。在一或多個實施例中’抛光帶3 1 8可 至約0.0 2英吋厚，並能耐受約1至5磅之拉力 他具有不同厚度及拉力強度之帶。舉例來說， 326可具有近乎1英吋之直徑，並能夠支承約 拋光帶318，或，舉例來說，可具有近乎3英 並能夠支承約3 0,000英吋的拋光帶3 1 8。可使 的線軸。線軸3 2 4、3 2 6可由例如，尼龍、聚氨 氟乙烯（PVDF)等之材料構成。亦可使用其他材 拋光塾3 1 6可由例如，縮搭樹脂（例如，杜 造的Delrin®)、PVDF、聚氨醋密閉性發泡、梦 丨1 8之類型、 1 00可接觸 的時間。 彈性、充氣 量可施加以 程之精確控 基板100中 多不同的材 亦可使用其 寸，所用的 米上達約 3 ^光帶寬度， 之不同寬度 為約 0.002 。可使用其 線軸 3 2 4、 5 00英吋的 吋之直徑， 用其他大小 酉旨、聚偏二 料。 邦公司所製 橡膠等材料200908122 The edge of the board is 1 〇 4 with a polishing belt of 3 1 8 . The substrate polishing tape 318 is for 15 to 150 seconds, depending on the particle size of the belt 3 used, the rate of rotation, the amount of polishing required, and the like. Longer or shorter lengths can be used to polish the edge 104 in accordance with the amount of force applied by the actuator, the amount of cushioning of the pad of the selected pad, and/or the pulling force on the belt. Accordingly, the present invention provides edge polishing, which can be used to compensate for different edge geometries and variations when material is removed from edge 104. In one or more embodiments, the polishing tape 3 18 can be made of a material such as oxidized, oxidized, or catalyzed. His materials. In certain embodiments, although other sizes of abrasives may be used, the size range may be, for example, from about 5 micrometers, or from 0.1 micrometers to 10 micrometers. Although it is possible to use other polishing belts from about 0.2 inches to about 1.5 inches, 3 1 8 can be used. In one or more embodiments, the polishing tape 3 1 8 can be up to about 0.0 2 inches thick and can withstand a tensile force of about 1 to 5 pounds. It has a belt of varying thickness and tensile strength. For example, 326 can have a diameter of approximately one inch and can support about polishing belt 318 or, for example, can have a polishing belt 3 1 8 that is approximately 3 inches and can support about 30,000 inches. The spool that can be made. The bobbins 3 2 4, 3 2 6 may be composed of a material such as nylon, polyvinyl fluoride (PVDF) or the like. Other materials may also be used. Polishing 塾 3 1 6 may be, for example, a shrink resin (for example, Delrin®), PVDF, polyurethane foam, type of dream 18, and contact time of 100. The flexibility and the amount of inflation can be precisely controlled. The different materials in the substrate 100 can also be used in the inch, and the used meters have a width of about 3 μ band, and the width is about 0.002. The diameter of the bobbin 3 2 4, 5 00 inches can be used, and other sizes can be used. Rubber and other materials made by the company
200908122 製成。可使用其他材料。這類材料可具有彈性或為拋光墊 之厚度或密度之函數之符合能力。材料可以其彈性為基礎 來選擇。材料可以其他品質為基礎來選擇。所需的彈性可 以所需的拋光類型為基礎來選擇。所需的彈性可以其他標 準為基礎來選擇。 在某些實施例中，用於幫助拋光或洗去積聚粒子之流 體可傳送至基板邊緣104。化學藥品可直接噴灑於基板1〇〇 上’位於基板/拋光帶之介面處，及/或可塗敷及/或通過帶 及/或拋光墊316。一流體通道可設置以滴下或喷灑流體在 拋光墊316上或至其中。或者，一充氣墊可包含一液囊， 其具有一半滲透性膜以允許流體緩慢釋放並傳送至拋光帶 (例如，通過該墊）。在這類實施例中，墊3 1 6可由吸收及/ 或保留所用流體（例如，聚乙烯醇（PVA)等）之材料覆蓋、製 成、及/或包含該材料。此外，本發明可利用重力或吸力以 致使逕流不要污染或掺觸基板1 〇 〇或本發明之設備之其他 部分。進一步地，能量（例如，超高頻音波能量）可透過流 體攜帶這類能量而施加至基板邊緣104。 基板100可在一水平平面中旋轉。基板1〇〇之邊緣1〇4 可對準或垂直拋光帶318、拋光墊316、及/或拋光頭314。 在額外或替代的實施例中，基板1 〇〇可在一垂直平面、其 他非水平平面中旋轉，及/或在不同旋轉平面間移動。 轉向第4圖，本發明提供示範的底墊400，其係與第5 圖所示之研磨拋光薄膜或帶500併用以清潔基板1 00之邊 緣104。在此處所示之實施例中，底墊400之輪廓為凹形， 12Made in 200908122. Other materials can be used. Such materials may be elastic or conform to a function of the thickness or density of the polishing pad. Materials can be selected based on their elasticity. Materials can be selected based on other qualities. The required elasticity can be selected based on the type of polishing desired. The required flexibility can be selected based on other criteria. In some embodiments, the fluid used to help polish or wash away the accumulated particles can be delivered to the substrate edge 104. The chemical may be sprayed directly onto the substrate 1' at the interface of the substrate/polishing tape and/or may be coated and/or passed through the tape and/or polishing pad 316. A fluid passage can be provided to drip or spray fluid onto or into the polishing pad 316. Alternatively, an inflatable cushion may comprise a bladder having a semi-permeable membrane to allow slow release of fluid and delivery to the polishing belt (e.g., through the mat). In such embodiments, the pad 3 16 may be covered, made, and/or contained by a material that absorbs and/or retains the fluid used (e.g., polyvinyl alcohol (PVA), etc.). Moreover, the present invention may utilize gravity or suction to cause runoff to not contaminate or otherwise contact the substrate 1 or other parts of the apparatus of the present invention. Further, energy (e.g., ultra high frequency sonic energy) can be applied to the substrate edge 104 by the fluid carrying such energy. The substrate 100 is rotatable in a horizontal plane. The edge 1〇4 of the substrate 1 can be aligned or vertically polished with the strip 318, the polishing pad 316, and/or the polishing head 314. In additional or alternative embodiments, the substrate 1 can be rotated in a vertical plane, other non-horizontal planes, and/or moved between different planes of rotation. Turning to Fig. 4, the present invention provides an exemplary bottom pad 400 which is used with the abrasive polishing film or tape 500 shown in Figure 5 to clean the edge 104 of the substrate 100. In the embodiment shown here, the contour of the bottom pad 400 is concave, 12
200908122 實質上形成一凹圓枉。可使用其他形狀。在某些實施例中’ 舉例來說，底墊400可具有近乎150 mm之半徑。可使用 其他適當的半徑。底墊400可設計為足夠寬以致當其拋光 基板邊緣104時，其橫越超過切口 116之寬度，如第5圖 所示。此可確保底墊400在拋光期間不會「落下」或進入 切口 116中，及由於撞擊而導致基板100之切口 116或邊 緣104之損壞。此外，欲進一步防止損壞基板1〇〇，底墊 400可由，舉例來說，具有小於蕭氏A型70硬度之軟性材 料製成，例如，具有蕭氏A型60硬度之P〇lueurethene70。 可使用其他柔軟度。底墊材料之柔軟度亦可容許底墊400 之壓縮，其可幫助拋光基板100之斜角112、114。 底墊400可為中空或可包含穿過其中之一孔，其可容 許底墊400裝配在一圓柱形滾輪402上。可使用其他滾輪 形狀。底墊400及滚輪402可放置在拋光頭314中，如第 3圖所示。當滾輪402放置在拋光頭314中時，舉例來說， 在滾輪402鄰接底墊400之各側上可包含一 0.5 mm之空 隙’以防萬一切口 116與底墊400之對準誤差發生時能有 調整的餘地。可使用其他提供足夠空隙之量度。 轉向第5圖，其提供第4圖所示之底墊400之示意圖。 在操作中’由一致動器（未顯乖）推動之底墊400可按壓拋 光帶500(在橫剖面中僅顯示一部分）緊靠基板邊緣1〇4以 拋光基板邊緣104。底墊400及滾輪402兩者皆能夠偕同 拋光帶500自由旋轉，以幫助拋光帶5〇〇拋光邊緣丨〇4。 換句話說’底墊4 00偕同拋光帶5 00之旋轉可在彼此間產 13 200908122 生比一不旋轉的底塾更小的摩擦力，舉例來說，不旋轉的 底塾可對抛光帶500產生阻力。舉例來說，減少的摩擦力 可導致拋光帶500上較少的磨耗與撕扯，從而增加拋光帶 500之可用壽命。此外，減少的摩擦力可導致減少的粒子 形成。粒子形成由於其能夠干涉拋光系統部件及基板製造 而不受歡迎。 在某些實施例中’如上文所述，底墊400可為凹形。 在這類實施例中’凹面之曲率半徑可選擇以匹配欲拋光之 基板100之圓周曲率。因此’舉例來說，對300 mm之基 板來說’凹面之也率半徑可為近乎150 mm，對200 mm之 基板來說’凹面之曲率半控可為近乎100 mm，而對400 mm 之基板來說，凹面之曲率半徑可為近乎200 mm。對這些不 同的範例基板尺寸來說’可使用其他曲率半徑。舉例來說， 稍微大於基板之曲率半徑之曲率半徑可選擇以導致拋光帶 5 00及/或允許切口 116更輕易地移動通過底墊400 (例如， 在不卡住拋光帶邊緣的情況下）。在某些實施例中，底墊 400之末端可如第5圖所描晝般為圓形。藉由使底塾400 之末端為圓形’切口 116可更輕易地通過底墊400。此外， 拋光帶500之邊緣可符合底墊40〇之圓形末端’以便當切 口 116通過底墊400時，切口 116具有更少機會卡住拋光 帶5 00之邊緣。 整個基板100可在拋光帶500按壓緊靠基板邊緣1〇4 時旋轉，以致拋光基板邊緣104之整個圓周。 如上文所述’底塾400可足約寬以橫越超過切口 116 14200908122 essentially forms a concave circle. Other shapes can be used. In some embodiments, for example, the bottom pad 400 can have a radius of approximately 150 mm. Other suitable radii can be used. The bottom pad 400 can be designed to be wide enough that it traverses beyond the width of the slit 116 as it polishes the edge 104 of the substrate, as shown in FIG. This ensures that the bottom pad 400 does not "fall" or enter the slit 116 during polishing and damage the slit 116 or edge 104 of the substrate 100 due to impact. Further, in order to further prevent damage to the substrate 1 , the bottom pad 400 may be made of, for example, a soft material having a hardness lower than that of the Shore A 70, for example, P〇lueurethene 70 having a Shore A hardness of 60. Other softnesses can be used. The softness of the underpad material may also permit compression of the backing pad 400, which may aid in polishing the beveled corners 112, 114 of the substrate 100. The bottom pad 400 can be hollow or can include a hole therethrough that allows the bottom pad 400 to fit over a cylindrical roller 402. Other wheel shapes can be used. The bottom pad 400 and the roller 402 can be placed in the polishing head 314 as shown in FIG. When the roller 402 is placed in the polishing head 314, for example, a gap of 0.5 mm may be included on each side of the roller 402 adjacent to the bottom pad 400 to prevent alignment errors between the opening 116 and the bottom pad 400. There is room for adjustment. Other measures that provide sufficient clearance can be used. Turning to Figure 5, a schematic view of the bottom pad 400 shown in Figure 4 is provided. In operation, the bottom pad 400, which is pushed by the actuator (not shown), can press the polishing tape 500 (only a portion is shown in cross section) against the substrate edge 1〇4 to polish the substrate edge 104. Both the bottom pad 400 and the roller 402 can be freely rotated by the same polishing tape 500 to assist in polishing the belt 5 to polish the edge 丨〇4. In other words, 'the bottom pad 4 00 偕 with the polishing belt 500 00 can be produced between each other 13 200908122 is less friction than a non-rotating bottom ,, for example, the non-rotating bottom 塾 can be used for the polishing belt 500 Generate resistance. For example, reduced friction can result in less wear and tear on the polishing tape 500, thereby increasing the useful life of the polishing tape 500. In addition, reduced friction can result in reduced particle formation. Particle formation is unpopular due to its ability to interfere with polishing system components and substrate fabrication. In certain embodiments, as described above, the bottom pad 400 can be concave. In such embodiments the radius of curvature of the 'concave surface can be selected to match the circumferential curvature of the substrate 100 to be polished. Thus, for example, for a 300 mm substrate, the radius of the concave surface can be nearly 150 mm. For a 200 mm substrate, the curvature of the concave surface can be nearly 100 mm, and for a substrate of 400 mm. For example, the radius of curvature of the concave surface can be nearly 200 mm. Other radii of curvature can be used for these different example substrate sizes. For example, a radius of curvature that is slightly larger than the radius of curvature of the substrate can be selected to cause the polishing tape 500 and/or to allow the slit 116 to move more easily through the bottom pad 400 (e.g., without jamming the edge of the polishing tape). In some embodiments, the end of the bottom pad 400 can be circular as depicted in Figure 5. The bottom pad 400 can be more easily passed by making the end of the bottom cymbal 400 a circular 'cut 116. In addition, the edge of the polishing tape 500 can conform to the rounded end of the bottom pad 40' so that when the slit 116 passes through the bottom pad 400, the slit 116 has less chance of catching the edge of the polishing tape 500. The entire substrate 100 can be rotated as the polishing tape 500 is pressed against the edge of the substrate 1〇4 so that the entire circumference of the substrate edge 104 is polished. As described above, the bottom cymbal 400 can be wide enough to traverse the slit 116 14
200908122 且亦拋光基板邊緣104。如果底塾400太窄，當底塾400 隨著基板100旋轉而接觸切口 116時，底墊4〇〇可「落下」 進入或以一角度接觸切口 U6’並可損壞切口 116之側邊。 此外’如果底塾400完全「落下」至切口 116内部，當底 塾400隨者基板1〇〇旋轉而移出切口 116時，底墊4〇〇可 損壞切口 11 6。 轉向第6圖，提供用於拋光一基板邊緣之示範的方法 600。在步驟S602中，旋轉基板1〇〇。在步驟S604中，底 塾400按壓拋光帶500緊靠基板邊緣1〇4。在步驟S606中， 拋光頭314(且必然地’底墊400)相對於基板邊緣1〇4搖 動。在步驟S608中，拋光帶，500前進。如上文所述，拋 光帶500可連續或增量前進。在步驟S610中，底墊繞著 滾輪402旋轉。如上文所述’底墊400偕同拋光帶500之 旋轉可在彼此間產生比一不旋轉的底墊更小的摩擦力，舉 例來說，不旋轉的底墊可對拋光帶500產生阻力。舉例來 説，減少的摩擦力可導致拋光帶500上較少的磨耗與撕 扯，從而增加拋光帶500之可用壽命。此外，減少的摩擦 力可導致減少的粒子形成，因為粒子形成由於其能夠干涉 拋光系統部件及基板製造而不受歡迎。在步驟S612中， 決定一預先設定的薄膜量是否已由基板邊緣移除。如上文 所述，控制器205可接收來自驅動器及/或致動器之回授訊 號。回授訊號可用來決定一特定的薄膜層何時已移除及/ 或足夠的拋光量是否已發生。 須了解此處所述之本發明之邊緣拋光設備可用於除了 15 200908122 那些適於基板上之斜角及邊緣拋光及/或薄族移除之設请 中。進一步地，如同那些在此技術中具有一般技成者將明 白，此處所述之設備可用於拋光及/或移除以任何定向（例 如，水平、垂直、對角線等）支撐之基板邊緣上之薄膜。 進一步地，須了解雖然僅揭示清潔圓形基板之範例’ 本發明可修改以清潔具有其他形狀之基板（例如’用於平板 顯示器之玻璃或聚合物薄板）。進一步地’雖然上文顯示藉 由該設備處理單一基板，在某些實施例中’該設備可同時 處理複數個基板。 前文之敘述僅揭示本發明之示範實施例。落在本發明 之範圍内之上文所揭示的設備及方法之修改對那些在此技 術中具有一般技能者來說將可輕易明白。此外，雖然本發 明已就其示範實施例加以揭示，須了解其他實施例可落在 本發明之精神與範圍内，如由跟隨之申請專利範圍所定義。 【圖式簡單說明】 第1圖為包含一切口之一部分基板的橫剖面示意圖。 第2圖為本發明一邊緣清潔系統範例實施例之示意平 面圖。 第3圖為本發明用於拋光基板邊緣之拋光設備實施例 之示意透祝圖。 第4圖為本發明底墊之透視圖。 第5圖為本發明底墊之示意圖。 第6圖為一流程圖，其描繪本發明之一範例應用。 【主要元件符號說明】 16 200908122200908122 also polishes the substrate edge 104. If the bottom cymbal 400 is too narrow, the bottom pad 4 can "fall" into or at an angle to contact the slit U6' and can damage the sides of the slit 116 as the bottom cymbal 400 contacts the slit 116 as the substrate 100 rotates. Further, if the bottom cymbal 400 is completely "dropped" into the inside of the slit 116, the bottom pad 4 〇〇 can damage the slit 116 when the bottom cymbal 400 is rotated by the substrate 1 移 to move out of the slit 116. Turning to Figure 6, an exemplary method 600 for polishing an edge of a substrate is provided. In step S602, the substrate 1 is rotated. In step S604, the bottom cymbal 400 presses the polishing tape 500 against the substrate edge 1〇4. In step S606, the polishing head 314 (and necessarily the bottom pad 400) is rocked relative to the substrate edge 1〇4. In step S608, the polishing tape, 500 is advanced. As described above, the polishing tape 500 can be advanced continuously or incrementally. In step S610, the bottom pad is rotated about the roller 402. As described above, the rotation of the bottom pad 400 and the polishing tape 500 can produce less friction between each other than a non-rotating bottom pad. For example, the non-rotating bottom pad can create resistance to the polishing tape 500. For example, reduced friction can result in less wear and tear on the polishing tape 500, thereby increasing the useful life of the polishing tape 500. In addition, reduced friction can result in reduced particle formation because particle formation is undesirable due to its ability to interfere with polishing system components and substrate fabrication. In step S612, it is determined whether a predetermined amount of film has been removed from the edge of the substrate. As described above, the controller 205 can receive feedback signals from the drivers and/or actuators. The feedback signal can be used to determine when a particular film layer has been removed and/or whether a sufficient amount of polishing has occurred. It will be appreciated that the edge polishing apparatus of the present invention as described herein can be used in applications other than 15 200908122 for bevel and edge polishing and/or thin group removal on substrates. Further, as will be appreciated by those of ordinary skill in the art, the apparatus described herein can be used to polish and/or remove substrate edges that are supported in any orientation (eg, horizontal, vertical, diagonal, etc.). The film on it. Further, it is to be understood that although only an example of cleaning a circular substrate is disclosed, the present invention can be modified to clean substrates having other shapes (e.g., 'glass or polymer sheets for flat panel displays). Further, although the above shows that a single substrate is processed by the device, in some embodiments the device can process a plurality of substrates simultaneously. The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above-disclosed apparatus and methods that fall within the scope of the present invention will be readily apparent to those skilled in the art. In addition, while the invention has been described with respect to the exemplary embodiments thereof, it is understood that other embodiments may be within the spirit and scope of the invention, as defined by the scope of the appended claims. [Simple description of the drawing] Fig. 1 is a schematic cross-sectional view of a substrate including a part of the mouth. Figure 2 is a schematic plan view of an exemplary embodiment of an edge cleaning system of the present invention. Figure 3 is a schematic illustration of an embodiment of a polishing apparatus for polishing the edges of a substrate of the present invention. Figure 4 is a perspective view of the underpad of the present invention. Figure 5 is a schematic view of the underpad of the present invention. Figure 6 is a flow chart depicting an exemplary application of the present invention. [Main component symbol description] 16 200908122
100 基板 102、 102’主表面 1 04 邊緣 106 ' 106’ 裝置區 108、 10 8’ 排除區域 110 外部邊緣 112、 114 斜角 116 切口 200 系統 202 ' 300 拋光設 204 拋光頭 205 控制器 302 基板驅動器 304 底座 306 支撐 308 中心 309 拋光頭驅動器 3 10 1¾光臂 312 框 3 14 拋光頭段 316 底或抛光塾 3 18' 500 拋光帶 320 ' 322 引導滚輪 324、 326 線軸 328、 330 線軸驅動器 400 底墊 402 圓柱形滚輪 600 方法 S602 ~ S612 步驟 17100 substrate 102, 102' main surface 104 edge 106' 106' device area 108, 10 8' exclusion area 110 outer edge 112, 114 bevel 116 slit 200 system 202 '300 polishing setup 204 polishing head 205 controller 302 substrate driver 304 Base 306 Support 308 Center 309 Polishing Head Drive 3 10 13⁄4 Light Arm 312 Frame 3 14 Polishing Head Section 316 Bottom or Polished 塾 3 18' 500 Polishing Tape 320 ' 322 Guide Roller 324, 326 Bobbin 328, 330 Spool Drive 400 Bottom Pad 402 Cylindrical Roller 600 Method S602 ~ S612 Step 17