200908143 九、發明說明 【發明所屬之技術領域】 本發明是關於在處理容器中，對例如FPD (平面顯示 )基板等之被處理體等執行特定真空處理，執行上述處理 容器內之壓力控制之技術。 【先前技術】 在LCD (液晶顯示）基板等之FPD基板之製造工程 中’有在減壓環境下對被處理體實施蝕刻處理或成膜處理 等之特定真空處理之工程。針對執行該些工程之真空處理 裝置之一例，當以執行上述蝕刻處理之裝置爲例，根據第 9圖予以簡單說明時，第1圖爲真空腔室，在該真空腔室 1之內部設置有用以載置被處理體例如FPD基板S之載置 台11’並且以對向於該載置台11之方式，設置有構成電 漿產生用之上部電極之處理氣體供給部12。然後，自處理 氣體供給部1 2供給處理氣體至真空腔室1內，經排氣故 13藉由真空泵14將真空腔室1內予以抽真空，另外藉由 自高頻電源15對上述處理氣體供給部12施加高頻電力， 而在基板S之上方空間形成處理氣體之電漿，依此對基板 S執行蝕刻處理。 然而’隨著基板s之大型化，裝置也跟著大型化，於 一面將大流量之處理氣體供給至真空腔室丨內，一面例如 以2Pa左右之低壓執行處理之製程等之時，則要求大排氣 能力。因此，一個真空腔室丨必須設置多數排氣管，例如 -4- 200908143 第1 0圖所示搬，在真空腔室1之底部，沿著真空腔室1 之周圍’例如設置6系統至8系統之排氣管，在各個排氣 路1 3設置有真空泵14和自動壓力控制閥（APC閥： A uΤ Ο M A ΤI C Pr e s sur e C οntrο 11 er 閥）16。該 APC 閥]6 爲 檢測出真空腔室1內之壓力，構成根據該檢測値和壓力設 定値，自動性控制其開度之閥。 然後，在上述蝕刻處理裝置中，對於執行特定之製程 ’使用上述所有之真空泵14而使真空腔室1內排氣，此 時，計由各APC閥1 6控制排氣路1 3之傳導率，如此一 來’真空腔室1內之壓力被控制成特定壓力。 然而，第11圖雖然模式性表示真空腔室1內之壓力 和APC閥1 6之開度之關係，但是如此壓力曲線是描繪出 急劇下降，接著傾斜小成爲平緩，漸成爲接近於水平之曲 線。在此在曲線之傾斜大之壓力範圍因APC閥1 6之開度 變化量對壓力之變化量小，故閥1 6之分解能低。另外， 在曲線之傾斜小之壓力範圍因APC閥1 6之開度變化量對 壓力之變化量大，故閥16之分解能變高。如此一來因應 壓力範圍，APC閥1 6之分解能不同，但是在分解能低之 壓力範圍中’難以執行因開度微細調整，故真空腔室1之 壓力變動變大。 另外，在上述蝕刻處理裝置中，要求一面供給大流量 之處理氣體至真空腔室1內，一面以低壓執行處理之製程 ’或一面供給大流量之處理氣體，一面以高壓執行處理之 製程’ 一面供給小流量之處理氣體，一面以低壓執行處理 -5- 200908143 之製程’或一面供給小流量之處理氣體，一面以高壓執行 處理之製程等’執行條件不同之各種製程。但是，如上述 蝕刻處理裝置般，在僅具備APC閥1 6之構成中，如先前 所述般，因存在APC閥1 6之分解能低之壓力範圍，故在 各種製程中’難以執行高精度之壓力控制，難以執行良好 處理。 再者’ AP C閥1 6如先前所述般，爲根據壓力檢測値 和壓力設定値自動性調整開度之構成，各具備用以調整開 度之控制器’爲高價，故增加如此之閥1 6，則成爲導致提 高裝置成本之主要原因之一。 在此’本發明者硏究出在真空泵〗設置多系統之排氣 管之構成中，組合上述APC閥和開度固定於多處之半固 定閥而加以設置之構成。並且，本發明者針對在連接於真 空腔室之多數排氣管設置APC閥和半固定閥之構成，對 先前技術文獻進行調查，並無發現於先行技術文獻中有相 關之記載。 【發明內容】 〔發明所欲解決之課題〕 本發明鑒於如此之情形而所創作出者，其目的在於提 供可以以高精度執行壓力調整之技術。 〔用以解決課題之手段〕 因此，本發明之真空處理裝置具備： -6- 200908143 在其內部對被處理體執行真空處理之處理容器； 一端側被連接於該處理容器’用以'使該處理容器之內 部予以真空排氣之η ( η爲2以上之整數）條之排氣路； 連接於該些排氣路之另一端側的真空排氣手段； 用以檢測出上述處理容器內之壓力的壓力檢測手段； 對應於上述η條之排氣路中之k ( 1 S k ‘ η -1 )條之排 氣路而設置，將排氣路之傳導率固定於所選擇出之値之半 固定控制手段；和 對應於設置該半固定控制手段之排氣路以外之排氣路 而設置，根據上述壓力檢測手段之檢測値和壓力設定値’ 自動性控制排氣路之傳導率之連續可變控制手段。 再者，本發明即使構成具備使處理容器之上述壓力設 定値，和上述半固定控制手段之設定資訊對應而予以記憶 的記憶部；和自上述記憶部讀出因應所指定之壓力設定値 之上述設定資訊，而將控制訊號輸出至上述半固定控制手 段之手段亦可。在此，上述記憶部是可以構成對應於每個 上述半固定控制手段而記憶上述壓力設定値和上述設定資 訊。 此時，上述半固定控制手段包含構成可以將上述排氣 路之傳導率選擇成最大和最小中之任一者的閥，上述設定 資訊爲該閥之開度。再者，上述半固定控制手段亦可以包 含構成可以將上述排氣路之傳導率選擇成最大、最小和最 大及最小之間之値中之任一者的閥，上述設定資訊構成該 閥之開度。 -7- 200908143 再者，本發明之真空處理方法是在經η ( η爲2以上 之整數）條之排氣路而連接於真空排氣手段之處理容器之 內部，對被處理體執行真空處理，其特徵爲：包含將被處 理體搬入至上述處理容器內部之工程；對應於上述η條之 排氣路中之k(lgkSn-l)條之排氣路而設置，將用以使 排氣路之傳導率固定於所選擇之値之半固定控制手段之開 度固定在某位置之工程；藉由被設置在設置有上述半固定 控制手段之排氣路以外之排氣路上，用以根據處理容器內 之壓力檢測値和壓力設定値，自動性控制排氣路之傳導率 之連續可變控制手段，一面調整上述排氣路之傳導率，一 面使在其內部保持被處理體之處理容器予以真空排氣之工 程；和在被真空排氣之處理容器之內部中，對被處理體執 行真空處理之工程。 並且，本發明之記億媒體，儲存有對被處理體執行真 空處理之真空處理裝置所使用之電腦程式，其特徵爲：上 述程式是以實行上述真空處理方法之方式，組成步驟群。 〔發明效果〕 若藉由本發明，因在連接於處理容器之多數排氣路之 幾個上設置連續可變控制手段，在所剩之排氣路設置半固 定控制手段，故僅在隨時可變控制段中針對分解能低之壓 力範圍，可以提高隨時可變控制段之分解能。一此，可以 執行高精度之壓力控制，故可以執行良好之處理。再者， 因組合設置有連續可變控制手段和低價之半固定控制手段 -8- 200908143 ，故可以將裝置零件成本抑制成較低。 【實施方式】 以下，針對本發明之實施形態，以對被處理體例如 FPD基板執行蝕刻處理之蝕刻處理裝置適用本發明之真空 處理裝置之時予以說明。第1圖爲上述蝕刻處理裝置2之 縱斷剖面圖。該蝕刻處理裝置2是具備在其內部用以對 FPD基板S施予蝕刻處理之被接地的處理容器20，該處理 容器20例如平面形狀形成四角形狀，藉由容器本體2 1和 蓋體22所構成。 上述FPD基板S爲角型被處理體，上述處理容器20 被設定成例如水平剖面之一邊爲3.5m，另一邊爲3.0m左 右之大小，上述容器本體2 1和蓋體2 2是由例如鋁（A1 ) 等之熱傳導性良好之材質所構成。圖中23爲用以將被處 理體搬入至處理容器20內之搬出入口，24爲用以開關上 述搬出入口 23之快門。 在上述容器本體21之內部配置有用以將基板S載置 在其上方之載置台3。該載置台3是電性連接於電漿產生 用之高頻電源部31，當作用以在處理容器20內產生電漿 之下部電極發揮功能。該載置台3經絕緣構件3 2被配設 在容器本體21之底面，依此，下部電極是在從處理容器 2 0電性浮起之狀態下被設置。 另外，在處理容器20內部之上述載置台3之上方， 以與該載置台3表面對向之方式，設置平板狀之上部電極 -9- 200908143 4，該上部電極4是被支撐於角板狀之上部電極基座41。 該些上部電極4及上部電極基座41是由鋁所構成。再者 ，上述上部電極基座4 1經框緣狀之導電構件42在從處理 容器20之頂棚部垂下之狀態下被支撐，依此上部電極4 是在與處理容器20電性導通之狀態下被設置，並且藉由 上部電極基座4 1、導通構件42及處理容器20之頂棚部包 圍周圍之區域當作氣體供給空間43被構成。 並且，在上部電極4和上部電極基座4 1之間，橫方 向分散於上部電極基座4 1側而形成有凹部，藉由該凹部 ，在上部電極4和上部電極基座4 1之間形成處理氣體之 擴散空間44，該擴散空間44藉由形成於上部電極基座41 之供給孔45，連接於上述氣體供給空間43。再者，在處 理容器20之頂棚部，以連接於上述氣體供給空間43之方 式’設置有處理氣體供給路46，該處理氣體供給路46之 另一端側連接於處理氣體供給部4 7。 如此一來，當處理氣體自處理氣體供給部47經氣體 供給空間43被供給至擴散空間44時，其處理氣體經被設 置在上部電極4之氣體供給孔4 8而被供給至上述基板S 上之處理空間，依此對基板S執行蝕刻處理。 另外，在容器本體2]之底壁，連接n(n爲2以上之 整數）條例如6〜8條之排氣路5 1，在該排氣路5 1之另一 端側各連接有例如由真空泵所構成之真空排氣手段52。該 排氣路51是在容器本體21之底面，沿著容器本體21之 周方向而被設置，在該例中，於容器本體21之四角形狀 -10- 200908143 之底面，對一個邊設置2條排氣路5 1，如此一來在 器20之底面全體連接有8條排氣路51。 再者，在上述η條排氣路5]中之 之排氣路5 1，構成半固定控制手段之閘閥GV對應 路51而被設置，在設置有該閘閥GV之排氣路51 排氣路5 1，構成連續可變控制手段之自動壓力控制 下，稱爲「APC閥：壓力控制閥」）AV對應於排: 而被設置。第1圖爲以多數閘閥GV、壓力控制閥 代表各當作「閘閥GV」、「壓力控制閥AV」。 在該例中，例如第2圖所示般，8條排氣路5 1 對應於4條排氣路5 1而設置壓力控閥AV 1〜GV4。 個壓力控制閥AV1〜AV4，和4個閘閥GV1〜GV4 如處理容器20之四角形狀之底面，被安裝成在連 相對向之一對邊的排氣路5 1，設置相同種類之閥。 接著，包含壓力控制閥 A V 1〜A V 4，和閘閥 GV4。針對與處理容器20之壓力控制關聯之部份 述。首先，處理容器20是在用以檢測出處理容器 壓力的壓力檢測手段66被設置在例如處理容器20 部。並且，該壓力檢測手段66即使設置在例如處 20之側壁部亦可，即使設置在處理容器20之側壁' 接著，針對上述壓力控制閥AV，使用第3匱 以說明。該閥AV具備例如平面形狀爲略橢圓狀之 閥箱6 1，在該閥箱61之上面和下面，以各互相爱 式，形成有各連接於上述排氣路5 1之開口部62a 處理容 a-1 )條 於排氣 以外之 閥（以 氣路5 1 AV爲 之中， 該些4 是在例 接於互 GV 1〜 予以敘 20內之 之側壁 理容器 尔可。 丨具體予 :中空之 ί向之方 、6 2 b 〇 -11 - 200908143 在閥箱61之內部，例如大於上述開口部62b之圓板狀之 閥盤63，藉由驅動臂64移動自如被設置在阻塞所有上述 下方側之開口部62b之位置（參照第4圖（c ))，和該 開口部62b之側方位置（參照第4圖（a ))之間。圖中 6 5爲上述驅動臂6 4之驅動機構。 再者，圖中67爲配置在壓力控制閥AV之附近之控 制器。該控制器6 7根據上述壓力檢測手段6 6之檢測値， 和因應自後數之控制部8所輸入之處理容器20之處理製 程的壓力設定値之偏差，控制驅動機構6 5之驅動的手段 。如此一來，藉由控制器6 7經驅動機構6 5控制驅動臂6 4 之驅動，藉由調整以閥盤63覆蓋之開口部62b之面積， 調整該閥AV之開度，其結果調整設置有該壓力控制閥 A V之排氣路5 1之傳導率。在此，本發明之連續可變控制 手段藉由壓力控制閥AV及控制器67所構成。 再者’上述閘閥GV構成其開度固定於所選擇之開度 。該閘閥GV例如第5圖所示般，具備例如平面形狀爲四 角形狀之中空之閥箱71，在該閥箱71之上面和下面，以 各互相對向之方式’形成有各連接於上述排氣路5 1之開 口部72a、72b。在閥箱71之內部例如大於上述開口部 72b之板狀之閥盤73被設置成藉由驅動機構75經驅動臂 74移動至事先所決定之多數處位置。 在該例中’閥盤7 3構成鄰接於上述下方側之開口部 7 2b ’並且可以在該開口部72b全部開口之全開位置（參 照第6圖（a ))，和覆蓋全部該開口部62b之全關位置 -12- 200908143 (參照第6圖（b ))之3處位置，如此一來，構成選擇 性固定於該閘閥GV當其開度全部打開、全部關閉和半開 之3處位置。 在此當全部打開閘閥GV之開度時，排氣路5 1之傳 導率爲最大，當全部關閉閘閥GV之開度時，排氣路5 1 之傳導率則爲最小，當使閘閥GV之開度設爲半開時，排 氣路5 1之傳導率則成爲最大和最小之間之値。此時，該 閘閥GV之開度藉由事先實驗，因應製程壓力及處理氣體 流量，對每閘閥GV 1〜GV4決定適當開度，例如藉由後述 之控制部8，因應處理製程選擇其開度，而被控制。 如此之壓力控制閥AV及閘閥GV於設置例如8系統 之排氣管之時，以將壓力控制閥AV設定成4個左右爲佳 ，於設置6系統之排氣管之時，以將壓力控制閥AV設定 成4個爲佳。再者，針對設置壓力控制閥AV和閘閥GV 之處可以適當選擇。 再者，上述蝕刻處理裝置構成藉由控制部8控制。該 控制部8例如由電腦所構成，例如第2圖所示般，具備有 CPU81、程式82、記憶體。上述程式82是自控制部8發 送控制訊號至蝕刻處理裝置之各部，以進行特定蝕刻處理 之方式組成命令（步驟）。該程式8 2被儲存於電腦記憶 媒體例如軟碟、光碟、硬碟、MO (光磁碟）等之記憶部 而被安裝於控制部8。 並且，該控制部8具備有處理方法儲存部8 3和資料 記億部84。上述處理方法儲存部83爲儲存對應於各種處 -13- 200908143 理製程之製程處理方法的部位，例如每處理製程， 處理氣體之種類或處理氣體之流量、處理容器20 設定値、處理溫度等。於上述資料記憶部84是使 器20之壓力設定値和閘閥GV之開度對應而加以 例如第2圖所記載般’作成將處理氣體流量和壓力 設爲參數，於每壓力設定値P1〜P2、P2〜P3、P3 記載著閘閥G V 1〜G V 4之開度對應於各閘閥g V 1〜 每個的表格。 在此’所選擇之製程處理方法於處理氣體流量 太大之時’可以僅使用壓力設定値當作參數，對應 設定値決定閘閥GV之開度，但是於處理氣體之差 ’則以處理氣體流量和壓力設定値作爲參數，因應 定閘閥G V之開度爲佳。針對是否如此將處理氣體 以決定閘閥GV之開度的參數可以因應製程處理方 定 再者上述程式2是自上述資料記憶部8 4讀出 指定之壓力設定値之閘閥GV1〜GV4之開度，包含 閥GV1〜GV4之控制訊號的程式。即是，該程式當 定處理之製程處理方法時，將記載於處理方法之處 當作壓力設定値予以指定，並自資料記憶部8 4讀 該壓力設定値之閘閥G V 1〜G V 4之開度，構成將開 輸出至各閘閥GV 1〜GV4。在該例中，如先前所述 藉由藉由閘閥GV之開度，將排氣路5 1之傳導率 某値，故閘閥GV之開度相當於閘閥GV之設定資言ί 記載有 之壓力 處理容 記憶。 設定値 〜ρ 4， GV4之 之差不 於壓力 爲之時 該些決 設爲用 法而設 因應所 輸出閘 選擇特 理壓力 出因應 度指定 般，因 設定成 -14- 200908143 接著，針對本發明之蝕刻處理方法予以說明。首先， 藉由控制部8，自處理方法儲存部8 3選擇目的之蝕刻處理 之製程處理方法。在控制部8中，根據該製程處理方法， 將控制訊號輸出至蝕刻處理裝置之各部，如此一來對被處 理體執行特定蝕刻處理。 具體而言，首先將基板S搬入至處理容器20，載置 於載置部3上，關閉快門24。在此時點，使閘閥GV及壓 力控制閥A V之開度全開，先使各真空排氣手段5 2予以 動作。接著，自處理氣體供給部47，朝向基板S吐出當 作處理氣體之蝕刻處理用之處理氣體，並且自高頻電源部 3 1供給高頻電力至載置部3，另外藉由控制部8控制閘閥 GV之開度，並且一面自動調整壓力控制閥AV之開度， 一面將處理容器20之內部空間減壓至特定壓力。如此一 來，在基板S上之空間形成電漿，並對基板S進行蝕刻處 理。 此時，上述處理容器2 0之壓力控制成下述般。即是 ，在控制部8讀取記載於所選擇出之製程處理方法之處理 壓力（壓力設定値）和處理氣體流量，自資料記憶部84 讀出因應此之閘閥GV 1〜GV4之開度，將開度指令輸出至 各閘閥GV1〜GV4，如此一來將該些閘閥GV1〜GV4之開 度固定於各所設定之位置。另外，自控制部8對壓力控制 閥AV1〜AV4之各個之控制器67，輸出記載於該製程處 理方法之壓力設定値，在各控制器67根據該壓力設定値 和來自壓力檢測手段6 6之壓力檢測値，調整各個壓力控 -15- 200908143 制閥AVI〜AV4之開度，如此一來在將處理容器20之內 部空間在壓力控制之狀態下減壓至特定壓力。 在如此之鈾刻處理裝置2中，因於4系統之排氣管設 置閘閥G V 1〜G V 4，並且在所剩之4系統之排氣管設置壓 力控制閥A V 1〜A V 4，故比起在所有8系統之排氣管設置 壓力控制閥AV之構成，由後述之實施例明顯可知，針對 因應閘閥GV之開度之組合的壓力範圍，壓力控制閥AV 之分解能變大。 具體而言，使用第7圖所示之模式圖予以說明。該圖 爲模式性表示各表示使用2個壓力控制閥AV而執行處理 容器之壓力控制之時，使用1個壓力控制閥AV和1個閘 閥GV而執行上述壓力控制之時，各個處理容器之壓力變 化。在該模式圖中，橫軸表示壓力控制閥AV之開度，縱 軸表示處理容器之壓力。 首先，在第7圖（a)中，實線表示組合1個壓力控 制閥AV和1個閘閥GV之時，各表示將閘閥GV之開度 固定於全關之時之壓力曲線（壓力曲線L1 )，中心線表 示使用兩個壓力控制閥AV之時之壓力曲線（壓力曲線L2 )。兩壓力曲線L1、L2雖然皆描繪出急劇下降，接著傾 斜小，成爲緩和，而接近於水平之曲線，但是兩者傾斜不 同。即是，因閘閥G V之開度全關，故壓力曲線L1較壓 力曲線L2，在高壓力範圍曲線傾斜變小，接近於水平。 如先前所述般，雖然在壓力曲線L之傾斜小之壓力範圍， 壓力控制閥AV之開度之變化量對壓力之變化量大，但是 -16- 200908143 在該例中，如圖示般，對應於高壓力範圍P 1〜P2之壓力 控制閥之開度範圍是組合閘閥GV和壓力控制閥AV之構 成的開度範圍B 1較僅使用壓力控制閥AV之構成之開度 範圍B 2寬。 再者，第7圖（b )實線表示組合1個壓力控制閥AV 和〗個閘閥GV之時，將閘閥GV之開度固定於全開之時 之壓力曲線（壓力曲線L 3 )，中心線表示使用兩個壓力 控制閥AV之時之壓力曲線（壓力曲線L2 )，但是在低壓 力範圍中曲線之傾斜變小，接近於水平，因此，對應於該 低壓力範圍P3〜P4之壓力控制閥AV之開度範圍如圖式 般，組合閘閥GV和壓力控制閥AV之構成之開度範圍B3 較僅使用壓力控制閥AV之構成之開度範圍B2寬。 如此一·來，使用組合閘閥GV和壓力控制閥AV，因 應閘閥GV之開度之組合，可以調整壓力曲線之形狀。此 時，因在壓力曲線之傾斜緩和之壓力範圍，壓力控制閥 AV之開度之變化量對壓力之變化量大，即是該壓力控制 閥AV之分解能變高，可抑制處理容器20內之壓力變動 ，執行精度佳之壓力控制。因此，在1台蝕刻處理裝置中 ’即使執行各種處理製程之時，因應各種處理製程壓力， 選擇組合閘閥GV之開度之組合，依此可以增大壓力控制 閥AV之分解能，依此可以執行精度佳之壓力調整，實施 良好處理。[Technical Field] The present invention relates to a technique for performing a specific vacuum process on a target object such as an FPD (planar display) substrate in a processing container, and performing pressure control in the above-described processing container. . [Prior Art] In the manufacturing process of an FPD substrate such as an LCD (Liquid Crystal Display) substrate, there is a process of performing a specific vacuum treatment such as an etching treatment or a film formation treatment on a target object in a reduced pressure environment. For an example of a vacuum processing apparatus that performs the above-described processes, when the apparatus for performing the above etching processing is taken as an example and is briefly described based on FIG. 9, the first drawing is a vacuum chamber in which the inside of the vacuum chamber 1 is provided. The processing gas supply unit 12 constituting the upper electrode for plasma generation is provided so as to mount the object to be processed, for example, the mounting table 11' of the FPD board S, and to face the stage 11. Then, the processing gas is supplied from the processing gas supply unit 12 to the vacuum chamber 1, and the inside of the vacuum chamber 1 is evacuated by the vacuum pump 14 through the exhaust gas, and the processing gas is supplied from the high-frequency power source 15 The supply unit 12 applies high-frequency power, and a plasma of the processing gas is formed in the space above the substrate S, whereby the substrate S is subjected to an etching process. However, as the size of the substrate s increases, the device is also increased in size, and when a large amount of processing gas is supplied into the vacuum chamber while the processing is performed at a low pressure of, for example, about 2 Pa, it is required to be large. Exhaust capacity. Therefore, a vacuum chamber must be provided with a plurality of exhaust pipes, for example, -4-200908143, Figure 10, at the bottom of the vacuum chamber 1, along the circumference of the vacuum chamber 1 'for example, 6 systems to 8 The exhaust pipe of the system is provided with a vacuum pump 14 and an automatic pressure control valve (APC valve: A u Τ Τ MA Τ I C Pr es sur e C οntrο 11 er valve) 16 in each exhaust passage 13 . The APC valve]6 detects the pressure in the vacuum chamber 1, and constitutes a valve that automatically controls the opening according to the detection enthalpy and the pressure setting. Then, in the above etching processing apparatus, the inside of the vacuum chamber 1 is exhausted by using all of the above-described vacuum pumps 14 for performing a specific process, and at this time, the conductivity of the exhaust path 13 is controlled by each APC valve 16. Thus, the pressure in the vacuum chamber 1 is controlled to a specific pressure. However, Fig. 11 schematically shows the relationship between the pressure in the vacuum chamber 1 and the opening degree of the APC valve 16. However, the pressure curve is a sharp drop, and then the inclination becomes small and gradually becomes a curve close to the horizontal. . Here, the pressure range in which the inclination of the curve is large is small because the amount of change in the opening degree of the APC valve 16 is small, so the decomposition energy of the valve 16 is low. Further, in the pressure range where the inclination of the curve is small, the amount of change in the degree of change in the opening degree of the APC valve 16 is large, so that the decomposition energy of the valve 16 becomes high. In this way, the decomposition energy of the APC valve 16 is different depending on the pressure range, but in the pressure range where the decomposition energy is low, it is difficult to perform fine adjustment due to the opening degree, so that the pressure fluctuation of the vacuum chamber 1 becomes large. Further, in the etching processing apparatus described above, it is required to supply a processing gas having a large flow rate to the inside of the vacuum chamber 1 while performing a process of processing at a low pressure or supplying a processing gas having a large flow rate while performing processing at a high pressure. The processing gas of a small flow rate is supplied, and the process of processing -5 - 200908143 is performed at a low pressure or a process gas of a small flow rate is supplied while the process gas is being processed at a high pressure. However, as in the above-described etching processing apparatus, in the configuration including only the APC valve 16, as described above, since the pressure range in which the decomposition of the APC valve 16 is low is low, it is difficult to perform high precision in various processes. Pressure control makes it difficult to perform good processing. Furthermore, the AP C valve 16 is configured to automatically adjust the opening according to the pressure detection 値 and the pressure as described above, and each of the controllers for adjusting the opening degree is expensive, so the valve is added. 16 is one of the main reasons for increasing the cost of the device. Here, the inventors of the present invention have a configuration in which a multi-system exhaust pipe is provided in a vacuum pump, and the APC valve and the semi-fixed valve whose opening degree is fixed to a plurality of places are provided. Further, the inventors of the present invention investigated the prior art documents for the configuration in which an APC valve and a semi-fixed valve are provided in a plurality of exhaust pipes connected to a true cavity, and no related documents have been found in the prior art documents. [Problem to be Solved by the Invention] The present invention has been made in view of such circumstances, and an object thereof is to provide a technique capable of performing pressure adjustment with high precision. [Means for Solving the Problem] Therefore, the vacuum processing apparatus of the present invention includes: -6-200908143 a processing container for performing vacuum processing on a workpiece to be processed therein; one end side is connected to the processing container 'for 'to make An exhaust passage for vacuum evacuating η (n is an integer of 2 or more) inside the processing container; a vacuum exhausting means connected to the other end side of the exhaust passages; for detecting the inside of the processing container a pressure detecting means for pressure; corresponding to the exhaust path of k ( 1 S k ' η -1 ) in the exhaust path of the above n, fixing the conductivity of the exhaust path to the selected one a semi-fixed control means; and an exhaust path corresponding to an exhaust path corresponding to the semi-fixed control means, and based on the detection of the pressure detecting means and the pressure setting 値 'automatically controlling the continuity of the exhaust path Variable control means. Furthermore, the present invention is configured to include a memory unit that stores the pressure setting of the processing container in association with the setting information of the semi-fixed control means, and reads the above-described pressure setting from the memory unit. The means for setting the information and outputting the control signal to the semi-fixed control means may also be used. Here, the memory unit may constitute the memory setting threshold and the setting information corresponding to each of the semi-fixed control means. In this case, the semi-fixed control means includes a valve constituting one of a maximum and a minimum of the conductivity of the exhaust passage, and the setting information is the opening degree of the valve. Furthermore, the semi-fixed control means may further comprise a valve constituting any one of a maximum, a minimum, and a maximum between a maximum and a minimum of the conductivity of the exhaust passage, wherein the setting information constitutes the opening of the valve. degree. -7- 200908143 In addition, the vacuum processing method of the present invention is connected to a processing container of a vacuum exhausting means via an exhaust path of η (n is an integer of 2 or more), and vacuum processing is performed on the object to be processed. And characterized in that: a project for carrying the object to be processed into the inside of the processing container; and corresponding to an exhaust path of k (lgkSn-1) in the n-th exhaust passage, for exhausting The conductivity of the road is fixed to a project in which the opening degree of the semi-fixed control means is fixed at a certain position; by being disposed on an exhaust road other than the exhaust path provided with the semi-fixed control means, A processing container for holding a to-be-processed object in the inside of the inside of the processing container by continuously controlling the pressure in the container, and setting the pressure to automatically control the conductivity of the exhaust path while adjusting the conductivity of the exhaust path The vacuum evacuation process; and the vacuum processing of the object to be processed in the interior of the vacuum evacuated processing container. Further, the computer of the present invention stores a computer program for use in a vacuum processing apparatus that performs vacuum processing on a target object, and is characterized in that the program is a step group formed by executing the vacuum processing method. [Effect of the Invention] According to the present invention, since a semi-fixed control means is provided in a plurality of exhaust passages connected to a processing container, a semi-fixed control means is provided in the remaining exhaust passages, so that it is only variable at any time. In the control section, for the pressure range with low decomposition energy, the decomposition energy of the variable control section can be improved. In this way, high-precision pressure control can be performed, so that good processing can be performed. Furthermore, since the combination is provided with a continuously variable control means and a low-cost semi-fixed control means -8-200908143, the cost of the device parts can be suppressed to be low. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to an embodiment in which an etching treatment apparatus for performing an etching treatment on a target object such as an FPD substrate is applied to the vacuum processing apparatus of the present invention. Fig. 1 is a longitudinal sectional view of the etching processing apparatus 2. The etching processing apparatus 2 is provided with a grounded processing container 20 for applying an etching treatment to the FPD substrate S therein, and the processing container 20 is formed in a quadrangular shape, for example, in a planar shape, by the container body 21 and the lid body 22. Composition. The FPD board S is an angled object to be processed, and the processing container 20 is set to have a size of, for example, 3.5 m on one side of the horizontal section and a size of about 3.0 m on the other side. The container body 21 and the lid body 2 are made of, for example, aluminum. (A1) is composed of a material with good thermal conductivity. In the figure, 23 is a carry-out port for carrying the object to be processed into the processing container 20, and 24 is a shutter for opening and closing the carry-in port 23. A mounting table 3 for placing the substrate S thereon is disposed inside the container body 21. The mounting table 3 is electrically connected to the high-frequency power supply unit 31 for generating plasma, and functions as a lower electrode for generating plasma in the processing container 20. The mounting table 3 is disposed on the bottom surface of the container body 21 via the insulating member 32, whereby the lower electrode is provided in a state of being electrically floated from the processing container 20. Further, a flat upper electrode 9-200908143 4 is provided above the mounting table 3 inside the processing container 20 so as to face the surface of the mounting table 3, and the upper electrode 4 is supported by a gusset The upper electrode base 41. The upper electrode 4 and the upper electrode base 41 are made of aluminum. Further, the upper electrode base 4 1 is supported by the frame-shaped conductive member 42 in a state of being suspended from the ceiling portion of the processing container 20, whereby the upper electrode 4 is electrically connected to the processing container 20. The area provided around the upper electrode base 41, the conduction member 42, and the ceiling portion of the processing container 20 is configured as a gas supply space 43. Further, a recessed portion is formed between the upper electrode 4 and the upper electrode base 4 1 so as to be laterally dispersed on the upper electrode base 4 1 side, and the recessed portion is between the upper electrode 4 and the upper electrode base 4 1 . A diffusion space 44 for processing gas is formed, and the diffusion space 44 is connected to the gas supply space 43 by a supply hole 45 formed in the upper electrode base 41. Further, in the ceiling portion of the processing container 20, a processing gas supply path 46 is provided in a manner of being connected to the gas supply space 43, and the other end side of the processing gas supply path 46 is connected to the processing gas supply portion 47. In this way, when the process gas is supplied from the process gas supply unit 47 to the diffusion space 44 through the gas supply space 43, the process gas is supplied to the substrate S via the gas supply hole 48 provided in the upper electrode 4. The processing space is thereby subjected to an etching process on the substrate S. Further, on the bottom wall of the container body 2], n (n is an integer of 2 or more), for example, 6 to 8 exhaust passages 5 1 are connected, and the other end side of the exhaust passage 5 1 is connected, for example, by A vacuum exhausting means 52 formed by a vacuum pump. The exhaust passage 51 is provided on the bottom surface of the container body 21 along the circumferential direction of the container body 21. In this example, two sides are provided on one side of the four-corner shape of the container body 21-10-200908143. The exhaust passage 5 1 is thus connected to the entire bottom surface of the device 20 with eight exhaust passages 51. Further, the exhaust passage 51 of the n exhaust passages 5] is provided as a gate valve GV corresponding to the semi-fixed control means, and is disposed in the exhaust passage 51 provided with the gate valve GV. 5 1. Under the automatic pressure control of the continuously variable control means, called "APC valve: pressure control valve", AV is set corresponding to the row: In the first drawing, a plurality of gate valves GV and pressure control valves are used as "gate valve GV" and "pressure control valve AV". In this example, as shown in FIG. 2, eight exhaust passages 5 1 are provided with pressure control valves AV 1 to GV 4 corresponding to the four exhaust passages 5 1 . The pressure control valves AV1 to AV4 and the four gate valves GV1 to GV4 are mounted on the bottom surface of the square shape of the processing container 20, and are installed such that the same type of valves are provided in the exhaust passages 51 which are opposite to one side. Next, it includes pressure control valves A V 1 to A V 4, and gate valve GV4. Part of the association with the pressure control of the processing vessel 20. First, the processing container 20 is provided at, for example, the processing container 20 at a pressure detecting means 66 for detecting the pressure of the processing container. Further, the pressure detecting means 66 may be provided, for example, on the side wall portion of the portion 20, even if it is provided on the side wall of the processing container 20, and then the third pressure is used for the pressure control valve AV. The valve AV is provided with, for example, a valve box 161 having a substantially elliptical planar shape, and an opening portion 62a connected to the exhaust passage 5 1 is formed on the upper surface and the lower surface of the valve box 61 in a mutual love manner. A-1) A valve other than the exhaust gas (with the air path 5 1 AV as the middle, these 4 are in the side wall of the mutual GV 1~ to the 20th.) 丨 Specific to: Hollow to the side, 6 2 b 〇-11 - 200908143 inside the valve box 61, for example, a disk-shaped valve disc 63 larger than the opening portion 62b, is movably provided by the driving arm 64 to block all of the above The position of the lower opening 62b (see Fig. 4(c)) and the lateral position of the opening 62b (see Fig. 4(a)). In the figure, 6.5 is the driving arm 64. Further, in the figure, reference numeral 67 denotes a controller disposed in the vicinity of the pressure control valve AV. The controller 67 is input based on the detection of the pressure detecting means 66 and the control unit 8 corresponding to the subsequent number. The deviation of the pressure setting of the processing process of the processing container 20, and the means for controlling the driving of the driving mechanism 65. First, the driving of the driving arm 64 is controlled by the controller 67 via the driving mechanism 65, and the opening degree of the valve AV is adjusted by adjusting the area of the opening 62b covered by the valve disc 63, and the result is adjusted and set. The conductivity of the exhaust passage 51 of the pressure control valve AV. Here, the continuously variable control means of the present invention is constituted by the pressure control valve AV and the controller 67. Further, the above-mentioned gate valve GV constitutes a fixed opening thereof. For example, as shown in Fig. 5, the gate valve GV includes, for example, a hollow valve box 71 having a rectangular shape in a square shape, and in a manner opposite to each other on the upper and lower sides of the valve box 71. Openings 72a and 72b each connected to the exhaust passage 51 are formed. A plate-shaped valve disc 73, for example, larger than the opening 72b inside the valve casing 71, is provided to be moved by the drive mechanism 75 via the drive arm 74. In the example, the valve disc 7 3 is formed adjacent to the opening portion 7 2b ' on the lower side and can be fully opened at the opening 72b (refer to Fig. 6 (a) ), and covering all the closed positions of the opening portion 62b -12- 200908143 (refer to Figure 6 (b)), in such a position, the configuration is selectively fixed to the gate valve GV when its opening degree is fully open, all closed and half open. When the opening degree of the gate valve GV is opened, the conductivity of the exhaust passage 5 1 is the maximum. When the opening degree of the gate valve GV is completely closed, the conductivity of the exhaust passage 5 1 is the smallest, and when the opening degree of the gate valve GV is set to be set When half-opening, the conductivity of the exhaust passage 5 1 becomes the maximum between the maximum and the minimum. At this time, the opening degree of the gate valve GV is determined by prior experiments, corresponding to the process pressure and the flow rate of the processing gas, for each gate valve GV 1 to GV4 The appropriate opening degree is determined, for example, by the control unit 8 to be described later, and the opening degree is selected in accordance with the processing procedure. When such a pressure control valve AV and a gate valve GV are provided with an exhaust pipe of, for example, an eight system, it is preferable to set the pressure control valve AV to about four, and to set the pressure of the exhaust pipe of the six systems to control the pressure. It is preferable to set the valve AV to four. Further, it is possible to appropriately select a place where the pressure control valve AV and the gate valve GV are provided. Furthermore, the etching processing apparatus described above is controlled by the control unit 8. The control unit 8 is constituted by, for example, a computer. For example, as shown in Fig. 2, the control unit 8 includes a CPU 81, a program 82, and a memory. The program 82 is a command (step) in which the control unit 8 sends control signals to the respective portions of the etching processing device to perform a specific etching process. The program 8 2 is stored in a memory portion of a computer memory medium such as a floppy disk, a compact disk, a hard disk, an MO (optical disk), and the like, and is attached to the control unit 8. Further, the control unit 8 includes a processing method storage unit 83 and a data recording unit 84. The processing method storage unit 83 is a portion for storing a processing method corresponding to various processing steps, for example, a processing gas, a type of processing gas, a flow rate of the processing gas, a processing chamber 20 setting, a processing temperature, and the like. In the data storage unit 84, the pressure setting of the actuator 20 corresponds to the opening degree of the gate valve GV, and the processing gas flow rate and pressure are set as parameters as described in the second drawing, and the pressure is set to 値P1 to P2 per pressure. P2 to P3 and P3 describe tables in which the opening degrees of the gate valves GV 1 to GV 4 correspond to the respective gate valves g V 1 to . In this case, the selected process processing method can use only the pressure setting 値 as a parameter when the processing gas flow rate is too large, and the corresponding setting 値 determines the opening degree of the gate valve GV, but the difference in the processing gas is the processing gas flow rate. And the pressure setting 値 as a parameter, it is better to open the gate valve GV. The parameter for determining whether or not to process the gas to determine the opening degree of the gate valve GV may be determined according to the process. Further, the program 2 reads the opening of the gate valves GV1 to GV4 of the specified pressure setting from the data storage unit 84. A program containing control signals for valves GV1 to GV4. That is, when the program is to be processed, the process is described as a pressure setting, and the gate of the pressure setting GGV 1 to GV 4 is read from the data storage unit 84. The degree is configured to be output to the gate valves GV 1 to GV4. In this example, as described above, by the opening degree of the gate valve GV, the conductivity of the exhaust passage 5 1 is somewhat 値, so the opening degree of the gate valve GV is equivalent to the setting of the gate valve GV. Handle the memory. Set 値~ρ 4, GV4 is not the same as the pressure, and the setting is set to 14-200908143. The etching treatment method will be described. First, the control unit 8 selects the processing method of the target etching process from the processing method storage unit 83. In the control unit 8, the control signal is output to each portion of the etching processing device in accordance with the processing method, and thus the specific etching process is performed on the object to be processed. Specifically, first, the substrate S is carried into the processing container 20, placed on the placing portion 3, and the shutter 24 is closed. At this point, the opening degree of the gate valve GV and the pressure control valve A V is fully opened, and each vacuum exhausting means 5 2 is first operated. Then, the processing gas supply unit 47 discharges the processing gas for the etching process as the processing gas toward the substrate S, and supplies the high-frequency power from the high-frequency power supply unit 31 to the placing unit 3, and is controlled by the control unit 8. The opening degree of the gate valve GV, and automatically adjusting the opening degree of the pressure control valve AV while decompressing the internal space of the processing container 20 to a specific pressure. In this manner, plasma is formed in the space on the substrate S, and the substrate S is subjected to etching treatment. At this time, the pressure of the processing container 20 is controlled as follows. In other words, the control unit 8 reads the processing pressure (pressure setting 値) and the processing gas flow rate described in the selected process processing method, and reads the opening degree of the gate valves GV 1 to GV4 in response to the data storage unit 84. The opening degree command is output to each of the gate valves GV1 to GV4, and thus the opening degrees of the gate valves GV1 to GV4 are fixed to the respective set positions. Further, the control unit 8 outputs a pressure setting 记载 described in the process processing method to each of the pressure control valves AV1 to AV4, and the controller 67 sets the pressure and the pressure detecting means 6 based on the pressure. After the pressure detection 値, the opening of each of the pressure control -15-200908143 valves AVI to AV4 is adjusted, so that the internal space of the processing container 20 is decompressed to a specific pressure under pressure control. In such an uranium engraving apparatus 2, since the gate valves GV 1 to GV 4 are provided in the exhaust pipe of the four systems, and the pressure control valves AV 1 to AV 4 are provided in the exhaust pipes of the remaining four systems, The configuration of the pressure control valve AV is provided in the exhaust pipes of all the eight systems. As is apparent from the later-described embodiment, the decomposition of the pressure control valve AV can be increased in response to the pressure range of the combination of the opening degrees of the gate valves GV. Specifically, it will be described using the pattern diagram shown in FIG. In the figure, when the pressure control of the processing container is performed using two pressure control valves AV, the pressure of each processing container is performed when the pressure control is performed using one pressure control valve AV and one gate valve GV. Variety. In the pattern diagram, the horizontal axis represents the opening degree of the pressure control valve AV, and the vertical axis represents the pressure of the processing container. First, in Fig. 7(a), when the solid line indicates that one pressure control valve AV and one gate valve GV are combined, each represents a pressure curve at which the opening degree of the gate valve GV is fixed at the full closing (pressure curve L1) ), the center line indicates the pressure curve (pressure curve L2) when two pressure control valves AV are used. Both of the pressure curves L1 and L2 are depicted as sharply decreasing, and then the inclination is small, which is moderate and close to the horizontal curve, but the inclination of the two is different. That is, since the opening degree of the gate valve G V is completely closed, the pressure curve L1 is smaller than the pressure curve L2, and the curve is inclined to be small in the high pressure range, which is close to the level. As described above, although the amount of change in the opening degree of the pressure control valve AV is large in the pressure range in which the inclination of the pressure curve L is small, 16-200908143 is in this example, as shown in the figure, The opening range of the pressure control valve corresponding to the high pressure range P 1 to P2 is the opening range B 1 of the combined gate valve GV and the pressure control valve AV, and is wider than the opening range B 2 of only the pressure control valve AV. . Furthermore, the solid line in Fig. 7(b) indicates that when one pressure control valve AV and one gate valve GV are combined, the opening degree of the gate valve GV is fixed to the pressure curve (pressure curve L 3 ) at the time of full opening, the center line Indicates the pressure curve (pressure curve L2) when two pressure control valves AV are used, but the inclination of the curve becomes smaller in the low pressure range, close to the level, and therefore, the pressure control valve corresponding to the low pressure range P3 to P4 The opening range of the AV is as shown in the figure, and the opening range B3 of the combined gate valve GV and the pressure control valve AV is wider than the opening range B2 of the pressure control valve AV alone. In this way, by using the combination gate valve GV and the pressure control valve AV, the shape of the pressure curve can be adjusted in accordance with the combination of the opening degrees of the gate valves GV. At this time, the amount of change in the opening degree of the pressure control valve AV to the pressure is large due to the pressure range in which the inclination of the pressure curve is moderated, that is, the decomposition energy of the pressure control valve AV becomes high, and the inside of the processing container 20 can be suppressed. The pressure changes and the pressure control with good precision is performed. Therefore, in one etching processing apparatus, even when various processing processes are executed, a combination of the opening degrees of the combined gate valves GV is selected in accordance with various processing process pressures, whereby the decomposition energy of the pressure control valve AV can be increased, and thus the execution can be performed. Good pressure adjustment with good precision and good processing.
再者’閘閥GV因比壓力控制閥AV低價，故組合使 用壓力控制閥AV和閘閥GV之時較僅使用壓力控制閥AV -17 - 200908143 之時’可以降低所有零件成本’可以抑制組裝該些零件之 裝置之裝置成本。此時’若越多閘閥GV之個數，越可以 謀求降低零件成本。 〔實施例〕 以下’爲了確認本發明之效果針對實施例予以說明。 在以下之實驗中’在第1圖所示之蝕刻處理裝置中，使用 在處理容器2連接6條排氣路5 1之裝置而進行實驗。 (實施例1 ) 於上述排热路5 1中之兩條各設置壓力控制閥A V ’並 且在其他4條排氣路5 1各設置閘閥GV，將閘閥GV之開 度予以全關，藉由真空排氣手段52排氣處理容器2，求出 此時之處理容器20內之壓力，和壓力控制閥AV之開度 之關係。將其結果以♦之資料表示於第8圖。圖中橫軸表 示壓力控制閥AV之開度，縱軸表示處理容器之壓力，此 時之兩個壓力控制閥AV之開度相同。 (比較例1 ) 在上述6條排氣路5 1全部各設置壓力控制閥AV，藉 由真空排氣手段5 2 0將處理容器2予以排氣，求出此時之 處理容器20內之壓力，和壓力控制閥 AV之開度之關係 。將該結果以♦之資料表示於第8圖。此時之壓力控制閥 AV之開度爲6個共同。 -18- 200908143 其結果，認爲於處理容器之壓力爲5 .3 2 P a I )〜13.3Pa(100mTorr)之時，在實施例 1中壓 A V之開度C 1爲1 1 . 1〜3 5.0，對此在比較例1中 制閥 AV之開度 C2爲 9.2〜12·0%，在上述 40mTorr )〜13.3Pa(100mTorr)之壓力範圍中 例1般，組合壓力控制閥AV和閘閥GV而設置 壓力控制閥AV之分解能變大，可以執行更精細 整，可以執行高精度之壓力調整。 在以上中，本發明即使使壓力檢測手段互相 壓力控制閥AV而設置，根據所對應之壓力檢泽 之檢測値和壓力設定値而自動性調整壓力控制閥 度亦可。並且，即使不在每壓力控制閥AV設置 控制閥AV之驅動機構65之控制器67，準備共 器，藉由1台控制器調整多數之壓力控制閥AV 可。 並且，在本發明中，半固定控制手段即使構 和全關之間選擇排氣路之開度亦可。再者，即使 半固定控制手段之排氣路具有多數流路之方式， 割略平行而設置，上述半固定控制手段選擇打開 路之多數流路全部或是幾個，或是全部關閉，將 路之傳導率固定於所選擇出之値亦可。 再者，本發明之真空處理裝置不僅蝕刻處理 適用於灰化或CVD等執行其他真空處理之處理 真空處理不一定限定於電漿處理，即使其他氣體 4 0 m T 〇 r r 力控制閥 ，壓力控 5.32Pa ( ，如實施 之構成， 之壓力調 對應於每 !1手段6 6 AV之開 控制壓力 通之控制 之開度亦 成在全開 以設置有 對流路分 上述排氣 上述排氣 ，亦可以 。再者， 處理亦可 -19- 200908143 ，即使處理以外之真空處理亦可。並且，作爲半導體基板 除以FPD基板之外’即使爲半導體基板亦可。 【圖式簡單說明】 第1圖爲表示本發明之一實施形態所涉及之蝕刻處理 裝置之剖面圖。 第2圖爲表示設置於上述蝕刻處理裝置之排氣路和控 制部之構成圖。 第3圖爲表示上述蝕刻處理裝置所使用之壓力控制閥 之槪略斜視圖。 第4圖爲表示上述壓力控制閥之作用的平面圖。 第5圖爲表示上述蝕刻處理裝置所使用之閘閥之槪略 斜視圖。 第6圖爲表示上述閘閥之作用的平面圖。 第7圖爲表示上述蝕刻處理裝置之處理容器之壓力， 和壓力控制閥之開度之關係之特性圖。 第8圖爲表示爲了確認本發明之效果所執行之實施例 1和比較例1之測定資料之特性圖。 第9圖爲表示以往之蝕刻處理裝置之剖面圖。 第1 0圖爲表示以往之蝕刻處理裝置之排氣路之平面 圖。 第11圖爲表示以往之蝕刻處理裝置之處理容器之壓 力，和壓力控制閥之開度之關係的特性圖。 -20- 200908143 【主要元件符號說明】 2 :蝕刻處理裝置 3 :載置台 4 :上部電極 8 :控制部 20 :處理容器 21 :容器本體 22 :蓋體 3 1 :高頻電源部 47 :處理氣體供給部 52 :真空排氣手段 66 :壓力檢測手段 A V :壓力控制閥 GV :聞閥 S : F P D基板Furthermore, the 'gate valve GV is lower than the pressure control valve AV. Therefore, when the pressure control valve AV and the gate valve GV are used in combination, the pressure control valve AV-17 - 200908143 can be used to reduce the cost of all parts. The cost of the device for these parts. At this time, the more the number of gate valves GV, the lower the cost of parts can be achieved. [Examples] Hereinafter, the effects of the present invention will be described with reference to examples. In the following experiment, an experiment was carried out in the etching treatment apparatus shown in Fig. 1 using a device in which six exhaust passages 5 1 were connected to the processing container 2. (Embodiment 1) The pressure control valve AV' is provided in each of the above-described heat exhausting passages 5 1 and the gate valve GV is provided in each of the other four exhaust passages 5 1 to completely close the opening degree of the gate valve GV. The vacuum exhausting means 52 exhausts the processing container 2, and obtains the relationship between the pressure in the processing container 20 at this time and the opening degree of the pressure control valve AV. The results are shown in Figure 8 as ♦. In the figure, the horizontal axis represents the opening of the pressure control valve AV, and the vertical axis represents the pressure of the processing container, at which time the opening of the two pressure control valves AV is the same. (Comparative Example 1) The pressure control valve AV is provided in each of the six exhaust passages 5 1 , and the processing container 2 is exhausted by the vacuum exhausting means 5 20 to obtain the pressure in the processing container 20 at this time. , and the relationship between the opening of the pressure control valve AV. The results are shown in Figure 8 as ♦. At this time, the pressure control valve AV has a common opening of six. -18- 200908143 As a result, it is considered that when the pressure of the processing container is 5.3 Pa P I I to 13.3 Pa (100 mTorr), the opening degree C 1 of the pressure AV in Example 1 is 11.1. 3 5.0, in this case, the opening degree C2 of the valve AV in Comparative Example 1 is 9.2 to 12·0%, and in the pressure range of 40 mTorr to 13.3 Pa (100 mTorr) described above, the pressure control valve AV and the gate valve are combined. The decomposition of the pressure control valve AV, which is set by the GV, can be made larger, and finer finishing can be performed, and high-precision pressure adjustment can be performed. In the above, even if the pressure detecting means is provided to the pressure control valve AV, the pressure control valve can be automatically adjusted based on the corresponding pressure detecting detection pressure and pressure setting. Further, even if the controller 67 of the drive mechanism 65 of the control valve AV is not provided per pressure control valve AV, the common controller is prepared, and a plurality of pressure control valves AV can be adjusted by one controller. Further, in the present invention, the semi-fixed control means may select the degree of opening of the exhaust passage between the configuration and the full closing. Further, even if the exhaust path of the semi-fixed control means has a plurality of flow paths and is arranged in parallel, the semi-fixed control means selects all or a plurality of flow paths of the open path, or all of them are closed, and the road is closed. The conductivity is fixed at the selected time. Furthermore, the vacuum processing apparatus of the present invention is not only etched and is suitable for ashing or CVD, etc., and other vacuum processing is not necessarily limited to plasma processing, even if other gases are 4 0 m T 〇rr force control valve, pressure control 5.32Pa ( , as the implementation of the composition, the pressure adjustment corresponds to each of the means 1 6 6 AV open control pressure through the control of the opening is also fully open to provide a convection path divided into the above exhaust, the exhaust Furthermore, the processing may be -19-200908143, and vacuum processing other than the processing may be performed. In addition, the semiconductor substrate may be replaced by an FPD substrate, even if it is a semiconductor substrate. [Simplified Schematic] FIG. Fig. 2 is a cross-sectional view showing an etching treatment apparatus according to an embodiment of the present invention. Fig. 2 is a view showing a configuration of an exhaust passage and a control unit provided in the etching processing apparatus. Fig. 3 is a view showing the etching processing apparatus. Fig. 4 is a plan view showing the action of the pressure control valve. Fig. 5 is a view showing the etching treatment device. Fig. 6 is a plan view showing the action of the above-described gate valve. Fig. 7 is a characteristic diagram showing the relationship between the pressure of the processing container of the etching processing apparatus and the opening degree of the pressure control valve. The figure shows the characteristic diagram of the measurement data of Example 1 and Comparative Example 1 which were performed to confirm the effect of the present invention. Fig. 9 is a cross-sectional view showing a conventional etching processing apparatus. Fig. 1 is a view showing a conventional etching treatment. Fig. 11 is a characteristic view showing the relationship between the pressure of the processing container of the conventional etching processing apparatus and the opening degree of the pressure control valve. -20- 200908143 [Explanation of main component symbols] 2: Etching Processing apparatus 3: mounting table 4: upper electrode 8: control unit 20: processing container 21: container body 22: lid body 3 1 : high-frequency power source unit 47 : processing gas supply unit 52 : vacuum exhaust means 66 : pressure detecting means AV: Pressure control valve GV: smell valve S: FPD substrate