TW200913045A - Method for the treatment of silicon wafers, treatment liquid and silicon wafer - Google Patents

Method for the treatment of silicon wafers, treatment liquid and silicon wafer Download PDF

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Publication number
TW200913045A
TW200913045A TW097116867A TW97116867A TW200913045A TW 200913045 A TW200913045 A TW 200913045A TW 097116867 A TW097116867 A TW 097116867A TW 97116867 A TW97116867 A TW 97116867A TW 200913045 A TW200913045 A TW 200913045A
Authority
TW
Taiwan
Prior art keywords
compound
treatment liquid
wafer
aliphatic
group
Prior art date
Application number
TW097116867A
Other languages
English (en)
Chinese (zh)
Inventor
Holger Froehlich
Original Assignee
Schmid Gmbh & Amp Co Geb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Gmbh & Amp Co Geb filed Critical Schmid Gmbh & Amp Co Geb
Publication of TW200913045A publication Critical patent/TW200913045A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)
TW097116867A 2007-05-25 2008-05-07 Method for the treatment of silicon wafers, treatment liquid and silicon wafer TW200913045A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007026081A DE102007026081A1 (de) 2007-05-25 2007-05-25 Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer

Publications (1)

Publication Number Publication Date
TW200913045A true TW200913045A (en) 2009-03-16

Family

ID=39874935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097116867A TW200913045A (en) 2007-05-25 2008-05-07 Method for the treatment of silicon wafers, treatment liquid and silicon wafer

Country Status (3)

Country Link
DE (1) DE102007026081A1 (de)
TW (1) TW200913045A (de)
WO (1) WO2008145231A2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101635322B (zh) * 2009-08-26 2011-01-05 北京中联科伟达技术股份有限公司 一种多晶太阳能电池片的链式制绒的方法及装置
CN102696092A (zh) * 2009-12-23 2012-09-26 吉布尔·施密德有限责任公司 用于处理硅基底的方法和装置
CN103811583A (zh) * 2012-11-12 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片制绒方法及硅片制绒装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022282A1 (de) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen
DE102009012827A1 (de) 2009-03-03 2010-10-07 Gebr. Schmid Gmbh & Co. Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
DE102011000861A1 (de) * 2011-02-22 2012-08-23 Rena Gmbh Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens
DE102011084346A1 (de) 2011-10-12 2013-04-18 Schott Solar Ag Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
DE102012107537A1 (de) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle
CN102916075A (zh) * 2012-09-27 2013-02-06 奥特斯维能源(太仓)有限公司 一种制绒深度稳定的方法
DE102014119090B4 (de) 2014-12-18 2022-12-01 Hanwha Q Cells Gmbh In-line-Nassbankvorrichtung und Verfahren für die nasschemische Bearbeitung von Halbleiterwafern
DE102016105866B3 (de) * 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3948890B2 (ja) * 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
JP4394693B2 (ja) * 2004-10-28 2010-01-06 三益半導体工業株式会社 半導体基板の製造方法及びエッチング液
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
JP4326545B2 (ja) * 2006-02-23 2009-09-09 三洋電機株式会社 凹凸基板の製造方法及び光起電力素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101635322B (zh) * 2009-08-26 2011-01-05 北京中联科伟达技术股份有限公司 一种多晶太阳能电池片的链式制绒的方法及装置
CN102696092A (zh) * 2009-12-23 2012-09-26 吉布尔·施密德有限责任公司 用于处理硅基底的方法和装置
CN102696092B (zh) * 2009-12-23 2017-05-31 吉布尔·施密德有限责任公司 用于处理硅基底的方法和装置
CN103811583A (zh) * 2012-11-12 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片制绒方法及硅片制绒装置

Also Published As

Publication number Publication date
WO2008145231A3 (de) 2009-04-02
DE102007026081A1 (de) 2008-11-27
WO2008145231A2 (de) 2008-12-04

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