TW200913045A - Method for the treatment of silicon wafers, treatment liquid and silicon wafer - Google Patents
Method for the treatment of silicon wafers, treatment liquid and silicon wafer Download PDFInfo
- Publication number
- TW200913045A TW200913045A TW097116867A TW97116867A TW200913045A TW 200913045 A TW200913045 A TW 200913045A TW 097116867 A TW097116867 A TW 097116867A TW 97116867 A TW97116867 A TW 97116867A TW 200913045 A TW200913045 A TW 200913045A
- Authority
- TW
- Taiwan
- Prior art keywords
- compound
- treatment liquid
- wafer
- aliphatic
- group
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 61
- 235000012431 wafers Nutrition 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 title claims abstract 5
- 239000010703 silicon Substances 0.000 title claims abstract 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 239000000654 additive Substances 0.000 claims abstract description 13
- -1 alicyclic hydroxy compound Chemical class 0.000 claims abstract description 12
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 10
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims abstract description 6
- 239000000600 sorbitol Substances 0.000 claims abstract description 6
- 150000002440 hydroxy compounds Chemical class 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 150000001491 aromatic compounds Chemical group 0.000 claims description 3
- 235000000346 sugar Nutrition 0.000 claims description 3
- 150000004676 glycans Chemical class 0.000 claims description 2
- 125000005027 hydroxyaryl group Chemical group 0.000 claims description 2
- 150000002772 monosaccharides Chemical class 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 229920001282 polysaccharide Polymers 0.000 claims description 2
- 239000005017 polysaccharide Substances 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- HOSGXJWQVBHGLT-UHFFFAOYSA-N 6-hydroxy-3,4-dihydro-1h-quinolin-2-one Chemical group N1C(=O)CCC2=CC(O)=CC=C21 HOSGXJWQVBHGLT-UHFFFAOYSA-N 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 150000008163 sugars Chemical class 0.000 claims 1
- 150000003573 thiols Chemical class 0.000 claims 1
- 238000009736 wetting Methods 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010924 continuous production Methods 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 208000007976 Ketosis Diseases 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 2
- 229930006000 Sucrose Natural products 0.000 description 2
- 150000001323 aldoses Chemical class 0.000 description 2
- 150000007824 aliphatic compounds Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003205 fragrance Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 150000002584 ketoses Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000005720 sucrose Substances 0.000 description 2
- 150000005846 sugar alcohols Chemical class 0.000 description 2
- WUBNJKMFYXGQDB-UHFFFAOYSA-N 3,3-diphenyl-2-benzofuran-1-one Chemical compound C12=CC=CC=C2C(=O)OC1(C=1C=CC=CC=1)C1=CC=CC=C1 WUBNJKMFYXGQDB-UHFFFAOYSA-N 0.000 description 1
- 235000009917 Crataegus X brevipes Nutrition 0.000 description 1
- 235000013204 Crataegus X haemacarpa Nutrition 0.000 description 1
- 235000009685 Crataegus X maligna Nutrition 0.000 description 1
- 235000009444 Crataegus X rubrocarnea Nutrition 0.000 description 1
- 235000009486 Crataegus bullatus Nutrition 0.000 description 1
- 235000017181 Crataegus chrysocarpa Nutrition 0.000 description 1
- 235000009682 Crataegus limnophila Nutrition 0.000 description 1
- 235000004423 Crataegus monogyna Nutrition 0.000 description 1
- 240000000171 Crataegus monogyna Species 0.000 description 1
- 235000002313 Crataegus paludosa Nutrition 0.000 description 1
- 235000009840 Crataegus x incaedua Nutrition 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- DOACSXJVHDTDSG-UHFFFAOYSA-N henicosan-11-one Chemical compound CCCCCCCCCCC(=O)CCCCCCCCCC DOACSXJVHDTDSG-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007026081A DE102007026081A1 (de) | 2007-05-25 | 2007-05-25 | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200913045A true TW200913045A (en) | 2009-03-16 |
Family
ID=39874935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097116867A TW200913045A (en) | 2007-05-25 | 2008-05-07 | Method for the treatment of silicon wafers, treatment liquid and silicon wafer |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102007026081A1 (de) |
| TW (1) | TW200913045A (de) |
| WO (1) | WO2008145231A2 (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635322B (zh) * | 2009-08-26 | 2011-01-05 | 北京中联科伟达技术股份有限公司 | 一种多晶太阳能电池片的链式制绒的方法及装置 |
| CN102696092A (zh) * | 2009-12-23 | 2012-09-26 | 吉布尔·施密德有限责任公司 | 用于处理硅基底的方法和装置 |
| CN103811583A (zh) * | 2012-11-12 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种硅片制绒方法及硅片制绒装置 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008022282A1 (de) | 2008-04-24 | 2009-10-29 | Gebr. Schmid Gmbh & Co. | Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen |
| DE102009012827A1 (de) | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
| DE102009028762A1 (de) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
| DE102011000861A1 (de) * | 2011-02-22 | 2012-08-23 | Rena Gmbh | Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens |
| DE102011084346A1 (de) | 2011-10-12 | 2013-04-18 | Schott Solar Ag | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
| DE102012107537A1 (de) * | 2012-08-16 | 2014-05-22 | Hanwha Q Cells Gmbh | Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle |
| CN102916075A (zh) * | 2012-09-27 | 2013-02-06 | 奥特斯维能源(太仓)有限公司 | 一种制绒深度稳定的方法 |
| DE102014119090B4 (de) | 2014-12-18 | 2022-12-01 | Hanwha Q Cells Gmbh | In-line-Nassbankvorrichtung und Verfahren für die nasschemische Bearbeitung von Halbleiterwafern |
| DE102016105866B3 (de) * | 2016-03-31 | 2017-07-06 | Technische Universität Bergakademie Freiberg | Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941941A (en) * | 1989-10-03 | 1990-07-17 | International Business Machines Corporation | Method of anisotropically etching silicon wafers and wafer etching solution |
| DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
| JP3948890B2 (ja) * | 2000-08-09 | 2007-07-25 | 三洋電機株式会社 | 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法 |
| JP3740138B2 (ja) * | 2003-06-25 | 2006-02-01 | 直江津電子工業株式会社 | テクスチャー形成用エッチング液 |
| JP4394693B2 (ja) * | 2004-10-28 | 2010-01-06 | 三益半導体工業株式会社 | 半導体基板の製造方法及びエッチング液 |
| CN1983644A (zh) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | 制作单晶硅太阳电池绒面的方法 |
| JP4326545B2 (ja) * | 2006-02-23 | 2009-09-09 | 三洋電機株式会社 | 凹凸基板の製造方法及び光起電力素子の製造方法 |
-
2007
- 2007-05-25 DE DE102007026081A patent/DE102007026081A1/de not_active Withdrawn
-
2008
- 2008-04-18 WO PCT/EP2008/003113 patent/WO2008145231A2/de not_active Ceased
- 2008-05-07 TW TW097116867A patent/TW200913045A/zh unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635322B (zh) * | 2009-08-26 | 2011-01-05 | 北京中联科伟达技术股份有限公司 | 一种多晶太阳能电池片的链式制绒的方法及装置 |
| CN102696092A (zh) * | 2009-12-23 | 2012-09-26 | 吉布尔·施密德有限责任公司 | 用于处理硅基底的方法和装置 |
| CN102696092B (zh) * | 2009-12-23 | 2017-05-31 | 吉布尔·施密德有限责任公司 | 用于处理硅基底的方法和装置 |
| CN103811583A (zh) * | 2012-11-12 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种硅片制绒方法及硅片制绒装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008145231A3 (de) | 2009-04-02 |
| DE102007026081A1 (de) | 2008-11-27 |
| WO2008145231A2 (de) | 2008-12-04 |
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