200915599 CHIPO_096TW7241 九、發明說明： 【發明所屬之技術領域】 本發明為一種具多層光學透鏡之發光二極體製造方法及 其結構，其特別應用於發光二極體之封裝中。 【先前技術】 隨著發光二極體製作技術逐漸成熟，發光二極體可應用的 範圍也由低階的指示燈、消費性電子產品等逐漸擴大到日常照 1 明、車燈之應用上，而發光二極體之封裝技術亦隨著應用範圍 之擴大而逐漸進步。 在發光二極體之封裝技術中，傳統的發光二極體大多使用 環氧樹脂作為封裝材料，但是當進展到高功率、高亮度發光二 極體時，雖然環氧樹脂具有高硬度之優點，但是因為提高了使 用的電流，所以發光二極體發出的熱也較傳統的發光二極體高 出數十倍，但環氧樹脂卻具有不耐高溫、易被白光發光二極體 , 中的短波長光線破壞等缺點，所以容易發生劣化、變色等情況。 為改善使用環氧樹脂而產生之缺點，現在已發展出其他之 封裝材料，例如矽膠或環氧樹脂與矽膠之合成物…等。因為矽 膠具有較高之耐熱性、可分散藍色光和近紫外光之特性，所以 與環氧樹脂相比，石夕膠可減少材料因電流和短波長光線帶來的 劣化、變色等缺點。 第1圖為習知發光二極體10之剖視圖。如第1圖所示， 習知發光二極體10係包括：一發光二極體座體11，其包括一 承載散熱部111以及至少二電極接腳112 ; —發光二極體晶片 200915599200915599 CHIPO_096TW7241 IX. Description of the Invention: [Technical Field] The present invention is a method for fabricating a light-emitting diode having a multilayer optical lens and a structure thereof, which is particularly applied to a package of a light-emitting diode. [Prior Art] With the gradual maturity of LED manufacturing technology, the range of application of LEDs has gradually expanded from low-level indicators and consumer electronics to the application of daily illumination and lamp. The packaging technology of the light-emitting diode has also gradually improved with the expansion of the application range. In the packaging technology of the light-emitting diode, most of the conventional light-emitting diodes use epoxy resin as a packaging material, but when it progresses to a high-power, high-brightness light-emitting diode, although the epoxy resin has the advantage of high hardness, However, because the current used is increased, the heat emitted by the light-emitting diode is tens of times higher than that of the conventional light-emitting diode, but the epoxy resin is not resistant to high temperature and is easily exposed by white light. Short-wavelength light damage, etc., is prone to deterioration, discoloration, and the like. In order to improve the disadvantages of using epoxy resins, other packaging materials have been developed, such as silicone or a combination of epoxy and silicone. Because silicone has high heat resistance, disperse blue light and near-ultraviolet light, it can reduce the defects of material and short-wavelength light and discoloration compared with epoxy resin. FIG. 1 is a cross-sectional view of a conventional light-emitting diode 10. As shown in FIG. 1 , the conventional light-emitting diode 10 includes: a light-emitting diode body 11 including a heat-dissipating portion 111 and at least two electrode pins 112; a light-emitting diode chip 200915599
12,其係設置於承載散熱部⑴上，並且利用至少二導線u 電性連接於對應之電極接腳112;以及—絲魏14，其 蓋保護發光二極體晶片12,且其材質為封裂用光學膠材、。I 光學透鏡14係將光學膠材塗覆於發光二極體1〇上， 化光學膠材後’㈣成各㈣合之職。並且，光學透鏡Μ 可保護發光二極體晶片12不受外界環境影響，例如可保護發 光二極體晶片12不會因環境中的水汽而受潮損壞或可保護發 光一極體晶片12上之導線丨3不受外力破壞而斷裂。 但因為目前的光學透鏡14多為單層’而且光學透鏡“之 硬度不足，當使用者欲安裝或操作發光二極體1〇時，例如欲 將發光一極體10女裝至電路板上而直接按壓於光學透鏡14上 時，因為光學透鏡14之硬度不足，所以外力會藉由光學透鏡 14傳遞至發光二極體1〇之内部，進而壓迫至發光二極體晶片 12，並且容易造成發光二極體晶片12上之導線13斷裂，進而 造成發光二極體10斷路而無法使用。 【發明内容】 為解決上述之問題’本發明提供一種具具多層光學透鏡之 發光二極體製造方法及其結構之發光二極體製造方法及其結 構’其係藉由形成多層光學透鏡，並將内保護層之硬度設計為 高於外保護層之硬度’藉此利用高硬度之内保護層保護發光二 極體晶片及其導線接點，進而降低破壞發光二極體晶片之可能 it避免其導線斷裂。 為達上述目的，本發明係提供一種具多層光學透鏡發光二 200915599 CHIPO_096Tff7241 極體之製造方法，其包括下列步驟··提供一發光二極體晶片； 形成至少一内保護層覆蓋保護發光二極體晶片及其導線接 點；以及形成一外保5蔓層覆蓋在内保護層上；其中，内保護層 及外保護層皆為光學膠層，並且内保護層之硬度係大於外保護 層之硬度。 為達上述目的本發明再提供一種具多層光學透鏡發光二 極體之結構，其包括：一發光二極體晶片；至少一内保護層， 广其係覆蓋保護發光二極體晶片及其導線接點；以及一外保護 層，其係覆蓋於内保護層上；其中内保護層及外保護層皆為光 學膠層’並且内保護層之硬度係大於外保護層之硬度。 為達上述目的，本發明又提供一種多層光學透鏡之製造方 法，其係應用於發光一極體封裝製程中，其包括下列步驟：形 成至少一内保護層覆蓋保護一發光二極體晶片及其導線接 點；以及形成一外保護層覆蓋在内保護層上；其中，内保護層 及外保護層皆為光學膠層，並且内保護層之硬度係大於外保護 (層之硬度。 為達上述目的’本發明又提供一種多層光學透鏡之結構， 其係應用於發光二極體結構中，其包括：至少一内保護層，其 係覆蓋保護發光二極體晶片及其導線接點；以及一外保護層， 其係覆蓋於内保護層上；其中内保護層及外保護層皆為光學膠 層’並且内保護層之硬度係大於外保護層之硬度。 藉由本發明的實施’至少可以達到下列進步功效： 、藉由形成具不同硬度之多層光學透鏡，用以避免發光二極 體晶片及其導線接點因外力而受損。 200915599 CHIPO_096TffT241 二、 藉由硬度較高之内保護層之設置，用以保護發光二極體之 導線，避免導線因外力而斷裂。 三、 藉由形成不同硬度之多層光學透鏡以吸收來自外界之外 力。 四、 藉由不同硬度的多層光學透鏡之設置，以增加光學透鏡抵 抗外力之能力。 為了使任何熟習相關技藝者了解本發明之技術内容並據 以實施，且根據本說明書所揭露之内容、申請專利範圍及圖 : 式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優 點，因此將在實施方式中詳細敘述本發明之詳細特徵以及優 點。 【實施方式】 第2圖為本發明之一種具多層光學透鏡30之發光二極體 20之製造方法流程圖。第3A圖為未具多層光學透鏡30之發 光二極體之結構之剖面示意圖。第3B圖為本發明之形成有内 ~ 保護層31之發光二極體之結構之剖面示意圖。第3C圖為本發 明之一種具多層光學透鏡30之發光二極體20之結構之剖面示 意圖。第4圖為本發明之一種内保護層31混合有其他材料之 發光二極體20’之結構之剖面示意圖。第5圖為本發明之一種 外保護層32混合有其他材料之發光二極體20”之結構之剖面 示意圖。 <第一實施例> 8 200915599 CHIPO_096TW7241 如第2圖所示，第一實施例為一種具多層光學透鏡30之 發光二極體20之製造方法，其包括：提供發光二極體晶片 S10 ;形成内保護層S20 ;以及形成外保護層S30。其中，内保 護層31及外保護層32皆為光學膠層，並且内保護層31之硬 度係大於外保護層32之硬度。 提供發光二極體晶片S10 :如第3A圖所示，提供已固定 於發光二極體座體11並藉由打線技術完成電性連接之發光二 極體晶片21，發光二極體晶片21可以為藍光、紅光、綠光、 紫外光發光二極體晶片…等。 形成内保護層S20 :如第3B圖所示，形成内保護層31覆 蓋保護發光二極體晶片21及其導線接點，内保護層31之材質 可以為矽膠、環氧樹脂或兩者之合成物，為提高内保護層31 之硬度也可使用任何可增加硬度之材質。此外，為提高内保護 層31保護發光二極體晶片21及其導線接點之功效，可形成多 層内保護層31，並且使内保護層31之硬度由内向外遞減，藉 由在接近發光二極體晶片21的位置形成較高硬度之内保護層 31，也就更能保護發光二極體晶片21並且減少導線斷裂之可 能。 形成外保護層S30 :如第3C圖所示，形成一外保護層32 覆蓋在内保護層31上。外保護層32之材質亦可選用矽膠、環 氧樹脂或兩者之合成物，但外保護層32之硬度需小於内保護 層31之硬度。藉由内保護層31之硬度較高之設計，可用以抵 擋由外保護層32所傳遞之外力，並且減少發光二極體晶片21 及導線接點因外力而受損之機會。 9 200915599 為Φε南發光二極體2〇 、 ΟΗΙΡ0^096ΤΨ7241 保護層32間製造一折射率之出光效率，可在内保護層31及外 大於外保護層32之折射率4也就疋使内保護層μ之折射率 射，進而增加光線出光之機會藉破壞光線之全内反 也可等於外保護層32之折 内保瘦層31之折射率 層32之形狀也可根據所需之^另夕^’内保護層31及外保護 凸面、球面…等等。 形而改變，可以為平面、 為提升發光二極體 高發光二極體2〇之出 、及增加其應用範圍’例如提 體20之顏色等，可分θ π χ先冗度、或改變發光二極 舉例來說，為了使發光材料或其組合。 、皮二Ζ 在内保護層31或是外保護層32十混- 波長轉換材料，葬由該本、私° 色光、、9人=猎k7b激發波長轉換材料使其發出黃光，兩 色“，後而使得發光二極體20 ’、20，，發出白光。 :者’為了提高發光二極體20之發光亮度、出光均勻性， 鈦=2或内保護層31中混合增亮材料，例如二氧化 二極體22(H，氧」Γ增加光線被反射的機會’以提高發光 中、.曰人料之党 或是在外保護層32或内保護層3i 二=，材料，增加光線被散射的機會，以使得發光二極體 人波長紐更加㈣，又或是仙保護層31中混 口波長轉換材料，並在外保護 善發光二極體20，、20”之特性。中心擴政材料，藉此改 10 200915599 CHIPO_096TW724] <第二實施例> 如第3C圖所示，本實施例為—種具多層光學透鏡3〇之發 光一極體20之結構’其包括：一發光二極體晶片；至少一内 保護層31 ;以及-外保護層32。其中，内保護層31及外保護 層32皆為光學膠層，並且内保護層31之硬度係大於外保護層 32之硬度。 發光二極體晶片2卜其係固定於發光二極體座體u上， 並且藉由打線技術，將至少二導線13分別由發光二極體晶片 1上的導線接點連接至對應的發光二極體座體u之電極接腳 112 ’藉以完成發光二極體2G之電性連接。發光二極體晶片21 可以為藍光、紅光、綠光、紫外光發光二極體晶片…等。 、内保魏31 ’其係直接覆蓋保護發光二極體晶片21及其 導線接點。如第3C圖所示，例如有二内保護層M，其分別為 第一内保護層311以及第二内保護層312。 第内保5蒦層係直接與發光二極體晶片21及其導線 接點接觸’而第二内保護層312則覆蓋於第一内保護層3ΐι 上。其中，第二内保護層312之硬度係小於第一内保護層阳 之硬度’並且第二内保護層312之折射率可小於或等於第一内 保護層311之折射率，藉以提高發光二極體20出光之機會。 外保護層32，其係覆蓋於内保護層31上，並且外保護層 32之硬度小於内保護層31之硬度，當外力施加於發光二^ 2〇之多層光學透鏡30時’因為外保護層32之硬度較低，所以 會將外力傳遞至多層光學透鏡3〇内部，但是由於内保靜Η 之硬度較高，所以可阻擔外力傳遞至發光二極體晶片Μ ^其 11 200915599 CHIPO_096Tff7241 導線接點’因此可避免外力壓迫而造成發光二極體晶片21受 損或是導線13由導線接點處斷裂。舉例來說，内保護層31之 硬度可以為蕭氏硬度D40 (shore D40)，而外保護層32之硬度 為蕭氏硬度D30 (shore D30)。 為提高發光二極體20之出光效率，可在内保護層31及外 保護層32間製造一折射率差，也就是使内保護層3丨之折射率 大於外保護層32之折射率，藉由折射率差破壞光線之全内反 射，進而增加光線出光之機會。此外，内保護層3〗之折射率 \ 也可等於外保護層32之折射率。另外，内保護層31及外保護 層32之形狀也可根據所需之出光光形而改變，可以為平面、 凸面、球面…等等。 如第4圖及第5圖所示，為提升發光二極體2〇之特性及 增加其應用範圍，例如提高發光二極體2〇之出光均勻性、發 光亮度、或改變發光二極體2〇之顏色等，可分別或是同時在 内保護層31及外保護層32中混合一波長轉換材料、一增亮材 料、一擴散材料或其組合。 例如，為了使發光二極體2〇發出白光，可使用藍光發光 一極體晶片21，並在内保護層31或是外保護層32中混合波長 轉換材料，藉由藍光激發波長轉換材料使其發出黃光，兩色光 混合後而使得發光二極體2〇,、2〇，，發出白光。 或者是為了提高發光二極體2〇之發光亮度、出光均勻性， 可在外保護層32或内保護層31中混合增亮材料，例如二氧化 鈦，藉由一氧化鈦增加光線被反射的機會，以提高發光二極體 2〇、2〇”之亮度，又或是在外保護層32或内保護層31中混合 12 20091559912, which is disposed on the heat-dissipating portion (1), and is electrically connected to the corresponding electrode pin 112 by using at least two wires u; and - the wire 14, the cover protects the LED chip 12, and the material is sealed Cracked with optical glue. I The optical lens 14 applies an optical adhesive to the light-emitting diode 1 ,, and after the optical adhesive is turned into a (4) joint. Moreover, the optical lens Μ can protect the LED chip 12 from the external environment, for example, can protect the LED wafer 12 from moisture damage due to moisture in the environment or can protect the wires on the LED wafer 12丨3 is broken by the damage of external force. However, since the current optical lens 14 is mostly a single layer 'and the optical lens is insufficient in hardness, when the user wants to install or operate the light-emitting diode 1 , for example, the light-emitting body 10 is to be worn on the circuit board. When the optical lens 14 is directly pressed against the optical lens 14, the external force is transmitted to the inside of the light-emitting diode 1 by the optical lens 14, and is pressed to the light-emitting diode wafer 12, and is easily caused to emit light. The wire 13 on the diode chip 12 is broken, and the light-emitting diode 10 is broken and cannot be used. [Invention] To solve the above problems, the present invention provides a method for manufacturing a light-emitting diode having a multilayer optical lens and The method for fabricating a light-emitting diode of the structure and the structure thereof are formed by forming a multilayer optical lens and designing the hardness of the inner protective layer to be higher than the hardness of the outer protective layer, thereby protecting the light by using a protective layer with high hardness The diode chip and its wire contacts, thereby reducing the possibility of damaging the LED chip, thereby avoiding wire breakage. To achieve the above object, the present invention provides a Multilayer optical lens emitting light 200915599 CHIPO_096Tff7241 The manufacturing method of the polar body, comprising the following steps: providing a light emitting diode wafer; forming at least one inner protective layer covering the protective light emitting diode chip and its wire contact; and forming a The outer cover 5 vine layer is covered on the inner protective layer; wherein the inner protective layer and the outer protective layer are optical adhesive layers, and the hardness of the inner protective layer is greater than the hardness of the outer protective layer. To achieve the above object, the present invention further provides a The structure of the multi-layer optical lens light-emitting diode comprises: a light-emitting diode chip; at least one inner protective layer covering the protective light-emitting diode chip and its wire contact; and an outer protective layer; Covering the inner protective layer; wherein the inner protective layer and the outer protective layer are both optical adhesive layers' and the hardness of the inner protective layer is greater than the hardness of the outer protective layer. To achieve the above object, the present invention further provides a multilayer optical lens The manufacturing method is applied to a light emitting diode packaging process, and the method comprises the following steps: forming at least one inner protective layer covering protection and one light emitting The body wafer and its wire contacts; and an outer protective layer is formed on the inner protective layer; wherein the inner protective layer and the outer protective layer are optical adhesive layers, and the hardness of the inner protective layer is greater than the outer protection (hardness of the layer In order to achieve the above object, the present invention further provides a structure of a multilayer optical lens, which is applied to a light-emitting diode structure, comprising: at least one inner protective layer covering the protective light-emitting diode chip and its wire connection And an outer protective layer covering the inner protective layer; wherein the inner protective layer and the outer protective layer are both optical adhesive layers' and the hardness of the inner protective layer is greater than the hardness of the outer protective layer. 'At least the following advancements can be achieved: by forming multilayer optical lenses with different hardnesses to avoid damage to the LEDs and their wire contacts due to external forces. 200915599 CHIPO_096TffT241 II. The protective layer is arranged to protect the wires of the light-emitting diodes from being broken by external forces. Third, by forming a multilayer optical lens of different hardness to absorb external forces from the outside. 4. The ability to resist the external force of the optical lens by the arrangement of multilayer optical lenses of different hardness. In order to make the technical content of the present invention known to those skilled in the art, and according to the disclosure, the scope of the patent application and the drawings, the relevant objects of the present invention can be easily understood by those skilled in the art. The detailed features and advantages of the present invention are described in detail in the embodiments. [Embodiment] Fig. 2 is a flow chart showing a method of manufacturing a light-emitting diode 20 having a multilayer optical lens 30 according to the present invention. Fig. 3A is a schematic cross-sectional view showing the structure of a light-emitting diode without a multilayer optical lens 30. Fig. 3B is a schematic cross-sectional view showing the structure of the light-emitting diode formed with the inner protective layer 31 of the present invention. Fig. 3C is a cross-sectional view showing the structure of a light-emitting diode 20 having a multilayer optical lens 30 of the present invention. Fig. 4 is a schematic cross-sectional view showing the structure of a light-emitting diode 20' in which an inner protective layer 31 is mixed with other materials. Fig. 5 is a schematic cross-sectional view showing the structure of a light-emitting diode 20" in which an outer protective layer 32 is mixed with another material of the present invention. <First Embodiment> 8 200915599 CHIPO_096TW7241 As shown in Fig. 2, the first embodiment For example, a method for manufacturing a light-emitting diode 20 having a multilayer optical lens 30 includes: providing a light-emitting diode wafer S10; forming an inner protective layer S20; and forming an outer protective layer S30. wherein the inner protective layer 31 and the outer layer The protective layer 32 is an optical adhesive layer, and the hardness of the inner protective layer 31 is greater than the hardness of the outer protective layer 32. The light emitting diode chip S10 is provided: as shown in FIG. 3A, the fixing body is fixed to the light emitting diode body 11 and completing the electrically connected light-emitting diode chip 21 by wire bonding technology, the light-emitting diode chip 21 may be blue light, red light, green light, ultraviolet light emitting diode chip, etc. Form an inner protective layer S20: As shown in FIG. 3B, the inner protective layer 31 is formed to cover the protective LED chip 21 and its wire contacts. The inner protective layer 31 may be made of silicone, epoxy or a combination thereof to improve internal protection. The hardness of layer 31 is also Any material which can increase the hardness is used. Further, in order to improve the effect of protecting the light-emitting diode chip 21 and its wire contacts by the inner protective layer 31, the multilayer inner protective layer 31 can be formed, and the hardness of the inner protective layer 31 is made from the inside to the outside. Decreasing, by forming the inner protective layer 31 with a higher hardness near the position of the light-emitting diode wafer 21, the light-emitting diode wafer 21 can be more protected and the possibility of wire breakage can be reduced. Forming the outer protective layer S30: As shown in FIG. 3C, an outer protective layer 32 is formed on the inner protective layer 31. The outer protective layer 32 may be made of tantalum rubber, epoxy resin or a combination of the two, but the outer protective layer 32 has a hardness less than that. The hardness of the protective layer 31 is designed to withstand the external force transmitted by the outer protective layer 32 by the higher hardness of the inner protective layer 31, and to reduce the damage of the light-emitting diode chip 21 and the wire contact due to external force. Opportunity. 9 200915599 is the refractive efficiency of the refractive index between the protective layer 32 of the Φε south-emitting diode 2〇, ΟΗΙΡ0^096ΤΨ7241, and the refractive index 4 of the inner protective layer 31 and the outer protective layer 32 is larger than that of the outer protective layer 32. Inside The refractive index of the protective layer μ, which increases the chance of light exiting by light, can also be equal to the shape of the refractive index layer 32 of the folded inner layer 31 of the outer protective layer 32.夕^' inner protective layer 31 and outer protective convex surface, spherical surface, etc. Shape change, can be flat, to enhance the light-emitting diode high light-emitting diode 2, and increase its application range 20 colors, etc., can be divided into θ π χ first redundancy, or change the light-emitting diodes, for example, in order to make the luminescent material or a combination thereof, the skin Ζ Ζ in the inner protective layer 31 or the outer protective layer 32 mixed - wavelength The conversion material is burial by the present, private color light, and 9 people = hunting k7b to excite the wavelength conversion material to emit yellow light, and the two colors ", and then the light-emitting diodes 20', 20, emit white light. In order to improve the luminance and uniformity of the light-emitting diode 20, titanium = 2 or a mixed brightening material in the inner protective layer 31, for example, the dioxide 22 (H, oxygen) Γ increases the light reflected. Opportunity' to improve the illuminating, sleazy party or the outer protective layer 32 or the inner protective layer 3i 2, material, increase the chance of light being scattered, so that the light-emitting diode is more wavelength (4), or It is a mixed-wavelength conversion material in the protective layer 31, and protects the characteristics of the good-emitting diode 20, 20". The central expansion material is used to change 10 200915599 CHIPO_096TW724] <Second embodiment> As shown in FIG. 3C, the present embodiment is a structure of a light-emitting diode 20 having a multilayer optical lens 3' including: a light-emitting diode wafer; at least one inner protective layer 31; and an outer protective layer 32. The inner protective layer 31 and the outer protective layer 32 are both optical adhesive layers, and the hardness of the inner protective layer 31 is greater than the hardness of the outer protective layer 32. The light-emitting diode chip 2 is fixed to the light-emitting diode body. u, and by wire bonding technology, at least two wires 13 The conductive pin diodes 2 are connected to the corresponding electrode pins 112 ′ of the corresponding LED body 1 by the wire contacts on the LEDs 1 . The LEDs 21 can be electrically connected. Blue light, red light, green light, ultraviolet light emitting diode chip, etc., Neibao Wei 31' directly covers the protective LED chip 21 and its wire contacts. As shown in Fig. 3C, for example The second inner protective layer M is respectively a first inner protective layer 311 and a second inner protective layer 312. The inner inner 5 layer is directly in contact with the light emitting diode chip 21 and its wire contact' and the second inner protection The layer 312 is overlaid on the first inner protective layer 3ΐι, wherein the hardness of the second inner protective layer 312 is less than the hardness of the first inner protective layer yang and the refractive index of the second inner protective layer 312 may be less than or equal to the first The refractive index of the inner protective layer 311 is used to improve the light-emitting diode 20. The outer protective layer 32 covers the inner protective layer 31, and the hardness of the outer protective layer 32 is smaller than the hardness of the inner protective layer 31. An external force is applied to the multilayer optical lens 30 of the light-emitting diode 'Because the hardness of the outer protective layer 32 is low, the external force is transmitted to the inside of the multilayer optical lens 3, but since the hardness of the inner insulating static is high, the external force can be blocked from being transmitted to the light-emitting diode wafer. 11 200915599 CHIPO_096Tff7241 Wire contact 'Therefore, it is possible to avoid damage of the LED chip 21 caused by external force or the wire 13 is broken by the wire contact. For example, the hardness of the inner protective layer 31 can be Xiao's hardness D40 ( Shore D40), and the outer protective layer 32 has a hardness of D30 (shore D30). To improve the light-emitting efficiency of the light-emitting diode 20, a refractive index difference can be produced between the inner protective layer 31 and the outer protective layer 32. That is, the refractive index of the inner protective layer 3丨 is greater than the refractive index of the outer protective layer 32, and the total internal reflection of the light is destroyed by the difference in refractive index, thereby increasing the chance of light exiting. In addition, the refractive index \ of the inner protective layer 3 can also be equal to the refractive index of the outer protective layer 32. In addition, the shapes of the inner protective layer 31 and the outer protective layer 32 may also be changed according to the desired light-emitting shape, and may be a plane, a convex surface, a spherical surface, or the like. As shown in FIG. 4 and FIG. 5, in order to improve the characteristics of the light-emitting diode 2 增加 and increase the range of application thereof, for example, to improve the light uniformity of the light-emitting diode 2, the brightness of the light, or to change the light-emitting diode 2 A color conversion material, a brightening material, a diffusion material, or a combination thereof may be mixed in the inner protective layer 31 and the outer protective layer 32, respectively or in the same manner. For example, in order to cause the light-emitting diode 2 to emit white light, a blue light-emitting one-pole wafer 21 may be used, and a wavelength conversion material may be mixed in the inner protective layer 31 or the outer protective layer 32, and the wavelength-converting material may be excited by the blue light. It emits yellow light, and the two colors of light are mixed to make the light-emitting diodes 2〇, 2〇, and emit white light. Alternatively, in order to improve the luminance and uniformity of the light-emitting diodes, a brightening material such as titanium dioxide may be mixed in the outer protective layer 32 or the inner protective layer 31, and the titanium oxide increases the chance that the light is reflected. Increasing the brightness of the light-emitting diodes 2〇, 2〇”, or mixing in the outer protective layer 32 or the inner protective layer 31 12 200915599
CHIP0.096TW724I 擴散材料’增加光線被散射的機會，以使得發光二極體20,、 20”所發出之光線更加均勻，又或是在内保護層31中混合波長 轉換材料’並在外保護層32中混合擴散材料，藉此提高發光 二極體20’、20”之特性。 藉由上述之各實施例中之描述可知，較高硬度之内保護層 31可直接保護發光二極體晶片21及其導線接點，並且可阻擒 經由硬度較低之外保護層32所傳遞之外力，進而避免發光二 極體晶片21因外力而受損，以及導線13自導線接點斷裂等缺 ί點。 惟上述各實施例係用以說明本發明之特點，其目的在使熟 驾》亥技術者此瞭解本發明之内容並據以實施，而非限定本發明 之專利Ιϋ圍，故凡其他未脫離本發明所揭示之精神而完成之等 效修飾或修改，仍應包含在以下所述之申請專利範圍中。 【圖式簡單說明】 (第1圖為習知發光二極體之剖視圖。 第θ為本發明之一種具多層光學透鏡之發光二極體之製造方 法流程圖。 第3Α圖為未具多層光學透鏡之發光二極體之結構之剔面示意 圖。 第3Β圖為本發明之形成有内保護層之發光二極 構 面示意圖。 第3C圖為本發明之—種具多層光學透鏡之發光二極體之結構 之剖面示意圖。 13 200915599 CHIPO—096TW7241 第4圖為本發明之一種内保護層混合有其他材料之發光二極體 之結構之剖面示意圖。 第5圖為本發明之一種外保護層混合有其他材料之發光二極體 之結構之剖面示意圖。 【主要元件符號說明】 S10............提供發光二極體晶片 S20............形成内保護層 S30............形成外保護層 10 ..............習知發光二極體 11 ..............發光二極體座體 111 ............承載散熱部 112 ............電極接腳 12 ..............發光二極體晶片 13 ..............導線 14 ..............光學透鏡 20 ..............發光二極體 21 ..............發光二極體晶片 30 ..............多層光學透鏡 31 ..............内保護層 311 ............第一内保護層 312 ............第二内保護層 32 ..............外保護層 14CHIP0.096TW724I Diffusion material 'increased the chance of light being scattered so that the light emitted by the light-emitting diodes 20, 20" is more uniform, or the wavelength conversion material is mixed in the inner protective layer 31 and is in the outer protective layer 32. The diffusion material is mixed in order to thereby improve the characteristics of the light-emitting diodes 20', 20". As can be seen from the description of the above embodiments, the inner layer of the higher hardness protective layer 31 can directly protect the light emitting diode chip 21 and its wire contacts, and can be blocked from being transmitted through the lower hardness layer 32. The external force further prevents the light-emitting diode chip 21 from being damaged by an external force, and the wire 13 is broken from the wire contact. However, the above embodiments are intended to illustrate the features of the present invention, and the purpose of the present invention is to enable the skilled person to understand the contents of the present invention and to implement the present invention without limiting the scope of the patent of the present invention. Equivalent modifications or modifications made by the spirit of the present invention should still be included in the scope of the claims described below. BRIEF DESCRIPTION OF THE DRAWINGS (The first drawing is a cross-sectional view of a conventional light-emitting diode. The second embodiment is a flow chart of a method for manufacturing a light-emitting diode having a multilayer optical lens of the present invention. The third drawing shows that there is no multilayer optical. Schematic diagram of the structure of the light-emitting diode of the lens. Fig. 3 is a schematic view showing the light-emitting diode of the invention with the inner protective layer. FIG. 3C is a light-emitting diode of the multilayer optical lens of the present invention. Schematic diagram of the structure of the body. 13 200915599 CHIPO—096TW7241 Fig. 4 is a schematic cross-sectional view showing the structure of a light-emitting diode in which an inner protective layer is mixed with other materials. Fig. 5 is a view showing an outer protective layer of the present invention. A schematic cross-sectional view of the structure of a light-emitting diode having other materials. [Explanation of main component symbols] S10............ Providing a light-emitting diode wafer S20.......... Forming the inner protective layer S30...... forming the outer protective layer 10..............the known light-emitting diode 11 ..... .........Light-emitting diode body 111............bearing heat-dissipating portion 112............electrode pin 12.. ............Lighting diode Wafer 13 ...................Wire 14 ..............Optical lens 20 .............. Diode 21 ..............Light Emitting Diode Wafer 30..............Multilayer Optical Lens 31 ........ ... inner protective layer 311 ......... first inner protective layer 312 ......... second inner protective layer 32 .... .......... outer protective layer 14