TW200920882A - Fluid-confining apparatus and method of operating the same - Google Patents

Abstract

The fluid-confining apparatus includes at least a substrate holder, at least a confining fluid supplying tube, at least a confining fluid recovering tube, at least a process fluid supplying tube, and at least a process fluid recovering tube. The process fluid supplying tube supplies at least a process fluid, and makes the process fluid contact with at least a treatment region of a wafer. The confining fluid supplying tube continuity supplies at least a confining fluid. The confining fluid does not dissolve the process fluid. The flowing confining fluid can contact with at least an non-treatment region of the wafer, and confines the process fluid into a predetermined space.

Description

200920882 IX. INSTRUCTIONS: » Technical Field of the Invention The present invention provides a fluid region control device and an operation method thereof, and more particularly to a fluid region applicable to a plating process cleaning or polishing process. Control device and method of operation thereof. [Prior Art] Currently, techniques for forming a metal material layer include physical vapor deposition, chemical vapor deposition, electroless plating, and electroplating. Among them, the electrorheological electroplating (ECP) technology has been widely used in the industry because of its advantages of low cost and high yield. During the electroplating process, the quality of the coating is affected by factors such as the composition of the mineral fluid, temperature, current density, and the cleanliness of the mineral surface. Please refer to Fig. 1 to Fig. 3, and Fig. 1 to Fig. 3 are schematic views showing the process of the conventional electrochemical plating process. As shown in Fig. 1, a wafer 1 and a plating apparatus 20 are first provided. The electroplating apparatus 20 includes a plating bath 12, a plating fluid 22, an anode system 14, a cathode electrode 16 and a fixing component 18. The plating bath 12 is for holding the electric mineral fluid 22, and the main component of the plating fluid 22 is a solution containing metal ions. The anode system 14 includes an anode chamber 30, an anode electrode 24, a filter membrane 26, a diffuser membrane 28, and an electromineral supply line 32. 200920882 The wafer ίο is placed on the cathode electrode 16 and the fixed assembly to be clamped by the cathode electrode 16 and the fixed έ so that the Japanese yen 10 and the U-shaped component 18 are clamped. Next, the wafer is tilted by tilting the wafer π·. The liquid level of the fine fluid 22: it is not easy to contain bubbles. Thereafter, 曰 mn i to be electroplated on the surface of the _ 曰 曰 〇 〇 电 电 电 电 电 电 电 电 电 电 , , , , , , , , , , , , , , , , , , , , , , , , , , In the electric mine day, Ά W special 'to ensure that the wafer 10 can continue to contact the fresh electroplating / the reading of the 4 mine device 20 is given an external voltage or current, the first 14 key fluid 22 The circuit formed by the cathode electrode is turned on, and the reduction reaction is performed around the cathode electrode 16 to simplify the metal material on the wafer 10. f know that the electrochemical process will not only be gold and bribe on the wafer 1G. The crystal face j also has the metal material money on the crystal edge of the wafer 10. However, the metal material attached to the crystal chip is not actually required by the product. Subsequent to other semi-conductive-clothing' The metal material on the surface of the crystal edge often causes corrosion due to thermal stress (out of _1 or other factors), which in turn causes metal

::Two: The clothes are broken and the test is broken. In particular, when a half batch of the bulk wafer is placed in a chemical vapor phase CVD apparatus, CVD is performed: if the wafer 10 is positioned at a position higher than the wafer 10, the peeling occurs. The phenomenon will be severe in other locations relative to the surface of the wafer 10 below, causing defects. In addition, when the wafer is moved by the A king, the scrap of the metal material tends to fall onto the surface of the crucible and contaminate the product, thereby affecting the performance of the product. 200920882 In order to avoid the defects of the upper jaw, the cleaning process and the cleaning process of the Xi and the second: the electric money process thorns • Bud material. This will not only increase the process time, but also remove the gold impurity on the surface of the crystal edge, which may lead to the yield of the product: it will increase the process of the conventional anode system, system 14, B曰. For the ten pairs of the key fluid 22, the conventional electrochemical money-making process requires the liquid surface of the German to be immersed because of 22. When the electrochemical plating process is carried out at 2 o'clock = with a large amount of electro-minerals, the old electro-mineral fluid 22 is injected into the new '2 process, it needs to be paused' to pour out οι αλ * ^ and the body 22. In this way, the replacement of the button households 22 and the new (four) long day picks, the scales are cast low. Wei body is first two or two: in order to carry out the electrochemical plating process, the single-wafer 10 must

== Placed in the cathode electrode 16 and the fixed component is called the second body 22, and then the electric recording device 2 is turned on and then the plating tank 12 is removed, and the electric heating device is used, and the electric key device 21 === dry process Wait for the follow-up process. As a result, a large number of crystals (4) 批次 f f 知 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电Furthermore, Xi (4) took advantage of the in-situ measurement of the day, so not only the electrochemical path was accurately and quickly measured, but also the measurement steps took extra time. SUMMARY OF THE INVENTION The main object of the present invention is to provide a fluid region control device 200920882 and a method of operating the same to solve the problems caused by the prior art. According to an embodiment of the present invention, there is provided a fluid region control device for electroplating comprising at least one substrate holder, at least one cathode electrode, at least one anode system, at least one control fluid supply line Confling fluid tube, at least one control fluid replenishing line (conflning rCC (w-g tube), at least one process fluid supply line (ptOcess_m tube) and at least one process fluid replenishing line (process recovering tube) The substrate carrying base is configured to carry at least one semiconductor substrate. The cathode electrode is disposed on the surface of the substrate carrying base for electrically connecting to the semiconductor substrate. The anode system is located above the substrate carrying base, substantially corresponding to the semiconductor substrate. Provided, and spaced apart from the substrate carrying base by a reaction height (rcacti〇n height). At least one area to be treated and at least one non-processing area are defined between the anode system and the cathode electrode. The control fluid provides f-line and control fluid replenishment. The pipelines are all arranged corresponding to the non-processing areas, respectively for providing and recycling at least one The process fluid supply line and the process fluid supply line are disposed corresponding to the area to be treated, respectively for providing and recovering at least one wire money fluid. According to another preferred embodiment of the present invention, the present invention Provided is a method for operating a fluid zone control device. First, at least a fluid zone control device is provided, the fluid•it device comprising at least a substrate bearing substrate, at least a control fluid supply, a scaly area to be treated. Providing at least -^^ base 200920882 bottom, 4· conductor base-like county bottom deck. Next, opening the control fluid supply pipeline and controlling the pipeline to make at least the control body _ from the control fluid to provide her, and The gift control system _ pipeline, wherein (4) the fluid flows through the non-located (four) domain of the base bearing. However, at least the donor fluid contacts the silk-bearing red sputum nuclear area, and the process (four) is insoluble for the present invention. The above-mentioned objects, features, and advantages will be more apparent. The preferred embodiments are described below, and the details are as follows. The following preferred embodiments and drawings are only for the purpose of illustration.盥 盥 。 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A schematic cross-sectional view, and a cross-sectional view of the anode system 114, which is not the same as (4) - 曰^θ, is represented by the same sign of =. It should be noted that the drawing is only for the original size drawing as shown in Fig. 4. The present embodiment provides a fluid area control for electroplating. The FI-type anode-anode M 114 includes a fluid region control system. The bottom-down: ηη fluid region control system, the system 12Q includes a substrate carrying base 130, - a cathode electrical second line m, at least a second official line 142, and at least a second official line 142 and at least a fourth line 144. 10 200920882 The anode system 114 is located above the substrate carrier pedestal 13 , and is essentially disposed corresponding to the processed semiconductor substrate UG. The arguing, the system m and the base wire carrier base (10) are separated from each other - the height of the reaction is Η, the side can be used as the voltage surface of the electric slave, and the other can assist the fluid zone control (4) to set 22G to control the height occupied by the process fluid. In the fluid zone control device 220, the anode system 114 can be a rotation = _ry SyStem or a fixed system _xed sys_. In other words, with respect to the _ bearing base 130, the anode system 114 can perform a rotating motion, or the soil can be held at a fixed position. The m-based wire holder 13Q can also be selected to be rotated or maintained. Fixed position. As shown in FIG. 5, the anode system can include an anode electrode 124 and optionally include at least a fifth line 136, a sensor 122 or a detector (detect 〇r, not shown In the picture). Alternatively, the anode system 114 may also include elements such as an anode chamber 118, a filter membrane, or a diffusion 128. The substrate carrier base 30 is used to carry at least one semiconductor substrate 1 . The substrate carrier base 130 of the present invention may have a belt type structure or a nng type structure. As shown in Fig. 6 and Fig. 7, the substrate carrier base 130 of Fig. 6 has at least one conveyor belt I3〇a, so that a plurality of semiconductor substrate rafts (7) to be processed can be sequentially introduced by the substrate carrier pedestal 13 The substrate supporting base 22 of the seventh embodiment has a ring structure hidden to accommodate the semiconductor substrate 110 to be processed. It should be noted that the substrate carrying base 13 can also be At the same time, it has a ring structure and a conveyor belt (not shown), and the semiconductor substrate no is accommodated by the ring structure, and the ring structure and the semiconductor substrate u are transported by the conveyor belt. 200920882 The cathode electrode 116 is disposed on the substrate carrier base The surface of the frame 30 can be electrically connected to the semiconductor substrate 110. The cathode electrode U6 can simultaneously serve as a fixing component for fixing the semiconductor substrate 110 to a predetermined position of the substrate carrier base 130. In view of this, the cathode electrode 116 There is an electrostatic chuck (e_chuck), a vacuum chuck (vacuum Chuck), a ring type structure or a clamp type structure, as shown in Figs. 8 and 9. Figure 8 The cathode electrode 16 can fix the semiconductor substrate from above the semiconductor substrate n〇, and the cathode electrode U6 of FIG. 9 can be fixed on the surface of the substrate carrier pedestal 13 from the periphery of the semiconductor substrate 110 toward the semiconductor substrate. The semiconductor substrate 110 is clamped in the direction of 11 倾. On the substrate carrying pedestal 130, between the anode system 14 and the cathode electrode, there is a region to be treated (not shown) and a non-processing region (not shown). In the figure, 4 points are located in the 彳-nuclear region _ semiconductor substrate 11Q is scheduled to accept the processing of the process, and the semiconductor substrate 11 partially located in the non-processing region is not intended to accept the processing of the process. Ratio: pipeline 132, second pipeline 134, the third pipeline 142 and the fourth pipeline 144 two squares, around the yang (four) system 114 'to provide or recycle the chemicals, additives, deionized water, gas, control fluid required for the process The third line 142 and the fourth line (4) are opposite to the outer side of the second line 134 and the second line 134. The first line (3), the second line 134, and the third line 142 are opposite to the semiconductor substrate m. Both the fourth pipeline 144 and the fourth pipeline 144 may have any shape of a pipeline, such as a circular shape, a semi-circle, an arc, an ellipse, a rectangle, or a polygonal shape. For example, the first pipeline shown in FIG. 132 and the second line 134 200920882 have a circular arc-shaped cross section, and the third pipeline H2 and the fourth pipeline 144, the first to describe the fluid area control, to cut into a plurality of: 1 132, a plurality of Two pipelines 134, a plurality of third pipelines 14 and a plurality of fourth pipelines 144, and let M f 5 渺, the main ρηΛ / j into a desired shape, such as a circle L, π' ^ ^·1 η, The first line 132, the second line 34, and the third line 142 are all round tubes, and the third line 142 and the fourth line 144 are respectively arranged in a circular pattern. Alternatively or as shown in Fig. 12, when the fluid region control means has the side wall 152 as an aid, the third line 142 and the fourth line 144 may have a linear load surface and be arranged in parallel with each other. It is important to note that the various lines in the figure are tilted towards the semiconductor substrate, as shown in Figure 4. However, the present invention is not limited thereto, and the pipelines of the fluid region control device 220 of the present invention may also be disposed perpendicular to the crystal plane of the semiconductor substrate, inclined toward the center of the semiconductor substrate ', even parallel to the semiconductor substrate. Set on the crystal face of 110. In addition to being able to install lines within the anode system 114, portions of the fluid zone control bar 220 can be actually lined. As shown in FIG. 1 , the fluid C1 domain system 120 may further include at least a sixth pipeline 146 and at least a seventh pipeline 148 ′ disposed in the substrate carrier pedestal 130 and corresponding to the semiconductor substrate 110 . The periphery. The sixth line port 46 and the seventh line 148 may have the above-described various types of wearing surfaces, or may be arranged in any shape by a plurality of sixth lines 146 or seventh lines 148. The fluid zone control device 220 can utilize the valve of the pipeline or each fluid pressure 13 200920882 to regulate the first line 132, the second line 134, the third line 142, the fourth line 丨 44, the fifth line 136, the sixth line 146 or The seventh line 148 is opened and closed, and the fluid area control device 220 can also regulate the flow fluid type, flow direction, flow rate, and even the set angle and position of each line in each line. On the other hand, in addition to the presence of the sensor 122 or the detector inside the anode system 114, various portions of the fluid region control device 220 can be provided with various sensors 122 or detectors, such as A temperature sensor, a flow sensor, or a sensor that measures the surface condition of the wafer (eg, thickness, flatness, etc.). For example, a sensor 122 may be included in the first line 132, and a sensor 122 may be included in the second line 134. These sensors can measure the process conditions or process fluids in real time during the process, so you can accurately and quickly control the enthalpy conditions, and then automatically feedback and adjust various process parameters or process fluids. quality. In order to more clearly illustrate the features of the present invention, one of the operational methods of fluid zone control device 220 will now be described by way of example in which the present invention is applied to an electrochemical plating process. Referring to Fig. 14, there is shown a schematic diagram of the operation of one of the fluid region control devices 220 for electroplating shown in Fig. 13, wherein the same elements or portions are denoted by the same reference numerals. As shown in Fig. 14, first, the fluid region control device 220 shown in Fig. 13 is provided. Thereafter, at least one semiconductor substrate U0 is provided, and the semiconductor substrate 110 is fixed to the substrate carrier base 130 by the cathode electrode 116 or other fixing components. The semiconductor substrate 110 can be a wafer, a slab substrate, or a semiconductor-based silicon-on-insulator (SOI) substrate. In the present embodiment, the semiconductor substrate 110 is a wafer. Since the crystal plane of the wafer of the embodiment needs to receive the electric ore to form the metal material layer 'and the crystal edge of the wafer does not need to form the metal material layer, the area to be processed of the fluid region control device 220 corresponds to the wafer. The crystal face, rather than the processing region 104, corresponds to the crystal edge of the wafer, wherein the crystal face of the wafer can be placed up facing the anode system 114. Next, the third line 142 and the fourth line 144 are opened such that a control fluid 154 continues to flow from the fourth line 144 and is recovered by the third line 142, while the sixth official line 146 and the seventh official line M8 are closed. Wherein, the control fluid 154 is used to maintain the shape and position of the process fluid such as the chemical substance or the cleaning fluid in the area to be treated, so that the chemical substance does not contact the semiconductor substrate 11 (the portion of the semiconductor substrate 11 that does not need to be subjected to process processing, for example, control Fluid 154 can be an inert gas. The fourth line I44 and the third line 142 are both disposed around the semiconductor substrate for providing and recovering the control fluid j M , respectively. At this time, the path of the control fluid i% flowing from the fourth line 144 to the second official line 142 may form a flow line p. Through the configuration of the third line 142 and the fourth line 144, the fluid zone control device 22g causes the domain control fluid 154 to flow through the non-treatment zone of the fluid zone control device 22. After the second opening Ϊ $ line 132 and the second line 丨 ' so that the electric ore, fluid 156 continues to flow from the first line m, and by the second line 134. Here, electroless plating 156 is a process fluid for an electrochemical plating process. The first tube, the line 132 and the first s line 134 are provided between the semiconductor substrate 200920882 110 and the flow line P of the control fluid 54. In order to promote continuous flow of the plating fluid 156 and the control fluid 154, a pump may be installed inside or outside the fluid zone control device 22 as a power source, but is not limited thereto. In other embodiments of the present invention, the process fluid may not be continuously provided and continuously recovered, but may provide a certain amount of process fluid to carry out the reaction, and then consider whether to recycle the process fluid or provide new ones depending on the situation. Process fluid. Since the plating fluid 156 and the control fluid 154 are not mutually soluble, the control fluid 154 can control the flow range of the plating fluid 156 such that the plating fluid 丨 56 does not contact the portion of the semiconductor substrate 110 that does not require process processing, but only contacts. The part of the semiconductor substrate that needs to be processed by the process. In this way, the fluid region control device 220 can control the space occupied by the electric ore fluid 156 by controlling the flow rate of the fluid 154, the flow rate of the money flow I56, and the respective tube_positions and the respective tubes. The anode envelope 124 and the cathode electrode 6 can be electrically connected to different potentials before or after the outflow of the electromineral fluid 56, so that the circuit composed of the anode electrode 24, the electro-mineral fluid 15 and the cathode electrode 116 It will be turned on, and the reaction will be performed around the cathode electrode 116, and the metal material will be on the crystal plane of the semiconductor substrate nQ. Under the foregoing conditions, the control fluid 154 and the electro-mineral fluid 156 are not subject to each other's reaction. The control fluid 154 utilizes the abundance of itself that is immiscible with the electromotive fluid 156 to align the position and flux of the confining fluid. On the date of this issue, the age of the system fluid is 200920882. The control fluid can be in the state of liquid, gas, and steam (v-rs tank 22:). For example, the plating fluid (9) flows in a liquid state, and the body 154 flows in a gaseous state. Alternatively, the electromineral fluid 156 and the body 154 may be liquid. Even the control fluid (9) can enclose a fluid such as carbon dioxide. In other embodiments of the invention, body 154 may additionally contain other materials to assist in (4) operation or to assist in the flow of control surface fluid enthalpy 56. For example, the control fluid 154 can include a fluidized gas, a hot gas, or a cold gas to vary the process temperature or the temperature and characteristics of the Wei fluid 156. As such, the control fluid 154 maintains the shape and position of the process fluid on the one hand, and enhances the manufacturing process on the other hand, and even removes residual residues on the semiconductor substrate (1). The main feature of the present invention is the use of a control fluid in place of the conventional container ' to control the position of the fluid required for the process and the space occupied by the process fluid. In order to achieve the above objectives, (4) fluid (four) process fluids are mutually incompatible, and the difficult fluid can pass through the flow line p which flows by itself to limit the space occupied by the process fluid, and utilize the magnetic force between the control body and the fluid. The function is to control the space occupied by the process fluid, or to control the space occupied by the process fluid by controlling the interaction between the fluid and the process fluid. In view of this, the control fluid 154 may include a magnetic material, an electrically conductive substance, a magnetorheological fluid (magnet〇_rhe〇丨〇gjca丨江江 MRF), an electrorheological fluid (electro-rheo丨〇) giCaj f|uid, erf), even solid particles. Thereby, the fluid region control device 220 can control the characteristics of the control fluid 154 or the plating fluid 156 by using a magnetic force or an electric force, and control the flow of the plating fluid 156 in 200920882. The foregoing method of operation is only one of the embodiments of the present invention, and the actual flow pattern of the control fluid 154 and the electro-recording fluid 156 is adjusted according to actual process requirements. In other words, for different process requirements, the control fluid 154 or electroplating fluid 56 of the present invention can be discharged from any line and recovered in a proper pipeline. Please refer to FIG. 15 to FIG. 8 , which are schematic diagrams showing other operation methods of the fluid region control device 220 for electroplating shown in FIG. 13 , wherein the same elements or parts are still represented by the same symbols. . The operation methods shown in Figs. 15 to 18 are also applicable to an electrochemical plating process, and the main difference between these operation methods and the above-described method is that the flow line of the control fluid 154 and the plating fluid 丨 56 has Changed. As shown in Fig. 15, the control fluid 154 is also discharged from the fourth line (4) and the error is recovered by the third line 142. However, the dying fluid 156 Μ second line 134 is recovered by the first line 132. As shown in Fig. 6, the (4) body (9) W motion 'line ρ also does not change, but the electric clock fluid 156 preferably flows out' and is recovered by the first line 132 and the second line m. As in <17, the first line 132 of the money flow fluid 156 φ flows out and is recovered by the second line port*. The control fluid 154 is discharged from the sixth line 146 and is recovered by the third line ι42. Alternatively, or as shown in Fig. 18, the electric ore fluid 156 flows out from the first to the line 132, and the line 134 is Μ. The control fluid 154 flows out from the seventh tube and is recovered by the (four) line 142 and the fourth tube 144. 200920882 _ Intention is made, the fluid area control device 22G, the fluid flow line ρ and the process The fluid flow line can be applied in a solvent cleaning process and the fluid zone control device 22 of the present invention can be applied to any process requiring control of the operating fluid, for example, a drying process, a wet process, a process An electroporation (etoroless-ing) process, a chemical mechanical polishing (c-drawing, CMP) process, or an electrochemical mechanical polishing process, and the like. When the fluid region control device 220 is applied to the cleaning process, the anode electrode 124 and the cathode electrode U6 need not be electrically connected to different potentials' and the surface fluid 156 can be replaced with a cleaning fluid, such as a deionized water (Dlwater) or a super Critical fluid. Therefore, after the semi-i-body substrate 110 receives the electrochemical electro-mineralization in the fluid region control device 220, the voltage applied to the anode electrode and the cathode electrode can be turned off, and the process fluid is exchanged, and immediately accepted in the same device--cleaning process Or a dry process. It can be seen that the fluid region control device does not even require two components of the anode electrode and the cathode electrode when applied to the cleaning process. Referring to Fig. 19, a green schematic view of a second preferred embodiment of the present invention for cleaning a fluid region control device 3, wherein the same elements or portions are denoted by the same reference numerals. As shown in Fig. 19, the present embodiment provides a fluid region control device 320 for cleaning. The fluid zone control device 320 differs primarily from the fluid zone control device 22 in that the fluid zone control device 320 for cleaning may not require the cathode electrode 116 and the anode system 114. Therefore, the fluid region control device 22 can fix the semiconductor substrate 110 by using a solid component 216, and utilize a pipeline system 214 to assist in controlling the reaction height η' of the process, wherein the fixing component 216 can be 19 200920882 Suction cup, vacuum cup or clamp structure. The pipeline system 214 is disposed above the substrate carrier pedestal 130 corresponding to the semiconductor substrate and is spaced apart from the substrate carrier pedestal 13G. "The reaction is high on the wire carrier 13G." And the surface plan (not shown in the figure). The semiconductor substrate 11Q partially located in the area to be processed is intended to be subjected to the processing of the process, and the portion located in the non-processing area_semiconductor substrate m is not intended to be subjected to the process of the process. In another embodiment of the present invention, the fluid zone control system 12 itself can clean the process, the process, or the drying process, while the gravity of the process fluid itself and the control fluid maintain the position of the process fluid, as shown in (4) When the fluid zone (4) device 32〇_魏职程 or clearance process, the control fluid and process can have other flow-saving formulas. Please refer to (4) to map 24, Lin Lai Μ 19 _ A schematic diagram of other methods of operation of the ugly domain control device 32, wherein the same read or portion is still represented by the same symbol, and the semiconductor substrate (10) herein may also be _day Japanese yen. As shown in Fig. =, when the semiconductor substrate (10) is to be cleaned (D), the first tube (four) 2 and the second line 134, the (four) required cleaning fluid 256 is supplied, and the cleaning fluid is recovered by the fifth line 36 256. The control fluid 1M is discharged from the sixth line tearing seventh line 148 and is recovered from the bottom up by the third line Η2 and the fourth line 144. Alternatively, as shown in Fig. 22, the fluid may be controlled. 154 is flowed out from the third line 142 and the fourth line 144 and is recovered from the top to the bottom by the sixth line 146 and the seventh line 148. 20 200920882 When the crystal edge of the semiconductor substrate 110 is to be cleaned, the fluid area control device The 32 Å area to be processed may correspond to the crystal side of the semiconductor substrate 110, and the non-processing area may correspond to the crystal plane of the semiconductor substrate U. As shown in Fig. 23, the first line 132 and the second line 134 together provide a process The desired control fluid 154 is recovered and the control fluid enthalpy 54 is recovered by the fifth line 136 to protect the crystal face of the wafer located in the non-treated region from contact with the cleaning fluid 256. The cleaning fluid 256 exits from the sixth line 46. And by the first The line 142 is recovered. Further, as shown in Fig. 24, when the crystal back of the semiconductor substrate 110 is to be cleaned, the fixing member 216 may first lift the semiconductor substrate 11 slightly, and the cleaning fluid 256 is provided by the sixth official line 146. The third line 142 recovers the cleaning fluid 256. The control fluid 154 flows out of the first line 132 and the second line 134 and is recovered by the fifth line 36. The fluid area control device 22 for electroplating of the present invention is used or used. The cleaning flow area control device 32 can also be applied to a chemical mechanical polishing process, wherein the process can be divided into a conventional chemical mechanical polishing process and an electrochemical polishing process. Referring to the figure, the green is not the third comparison of the present invention. A cross-sectional view of a fluid region control device 720 for use in polishing. As shown in the first diagram, the fluid region control device can include a polishing system (p〇llsWng system) 7i4 and a fluid region control system, and a first 20' wherein the polishing system 7M further includes a polishing pad 75. A polishing pad holder (padh〇lder) 724, and a research material (8ΐ_ΐ58. When applied to an electrochemical polishing process, the fixing component 216 can serve as an anode electrode] and the polishing crucible holder 724 can serve as a cathode electrode for Power-on accelerated grinding 200920882 f. In addition, when the chemical mechanical polishing process is applied, the fluid region "coating 720 can close the voltage applied to the anode electrode and the cathode electrode, so that a conventional chemical mechanical polishing process can be performed in one device. In other words, through the replacement of some strains, _, and the replacement of process fluids, the semiconductor-based phantom-fluid zone control device quickly performs various processes, such as I-chemical mechanical polishing process. - The cleaning system ^, the substrate carrying base 130 has a wire----------------------------------------------------------------- The semiconductor substrate 110 located in the area to be processed is intended to be subjected to a chemical mechanical polishing process, and the semiconductor substrate 11G partially located in the non-viewing area is not intended to be subjected to the processing of the chemical machine-grinding process. Both the flow line P and the process fluid flow line can be used in the chemical mechanical polishing process, and the height and position of the grinding bowl 751 can be adjusted according to the requirements of the process. It is necessary to carry out chemical research (4), grinding 塾π The semiconductor substrate u〇 can be lifted up to the surface of the polishing pad π. The polishing system 7M can further comprise a measurable crystal. The flatness or material layer thickness sensor 722 performs an instantaneous flat measurement on each part of the semiconductor substrate no, and can directly feed the measurement result into the process. In addition, the grinding system 71 can include each Surface type grinding device, such as mQtary type) grinding device, a lim^type grinding device, a rail type (〇rbita Uype) grinding device, or a fixed abrasive particle (fixed Abrasive web) system. For example, when 22 200920882 - the grinding system 714 is a fixed abrasive particle system, the polishing pad 751 itself may have various types of abrasive particles, and the fluid region control device 72 is supplied with the process fluid It can be a deionized water, and the polishing pad 751 with abrasive particles can be used to roll and polish the entire semiconductor substrate 110 or a specific region of the semiconductor substrate 11 such as the convex region of the surface of the semiconductor wire 110, in conjunction with the deionized water. In practice, the size of the polishing pad 1 may be larger than the semiconductor substrate UG, smaller than the semiconductor substrate (10), or larger than the semiconductor substrate 110. It can also be inferred that the conventional chemical thief polishing process can be performed when the fluid region control device 320 for cleaning is equipped with at least a polishing pad. Because the fluid zone control device 72 can use the control fluid to control the position of the abrasive aggregate 158 or the secret water, and (4) the height and position of the polishing pad 751 to grind the entire semi-conducting county bottom U0 or the semi-conducting county bottom m The area, and thus the fluid area control device 720 has the following side concerns. First, the fluid region control device 720 can easily adjust the position of the to-be-processed region and the non-processing region, and can also easily adjust the position of the semi-conducting county bottom. The semiconductor substrate 11 or the material layer which is required to be in the domain is subjected to grinding to be damaged or destroyed. Secondly, after the special process, the traditional deposition process, or the traditional polishing process, the surface of the single-semiconductor substrate UG or a certain material layer is often 23 200920882 - there will be a uniformity (10) f〇_ty The problem of poorness, for example, after the conventional polishing process, the edge of the substrate 110 will be thinner and the center will be thicker. Since the fluid region control device 720 can easily adjust the positions of the to-be-processed region and the non-processing region, the flatness of the semiconductor substrate 110 or the thickness of the material layer can be measured immediately, so that the semiconductor substrate having a good uniformity can be automatically ground. (10) or material layer. Furthermore, since the flow-domain control sets the 7-control texture to control the required pick-up of the parent's grinding, the fluid area control unit 72() can have any size of grinding 塾7S. Unlike the conventional grinding machine. The size of the abrasive crucible must generally be greater than the size of the semiconductor substrate 110. In addition, since the fluid region control device 72 can apply the grinding (four) 158 or deionized water to the region to be treated, it can be called that the research-free material 158 is in contact with other susceptible regions of the semiconductor wire HGJi, and the grinding material 158 can also be saved. Or use deionized water to avoid unnecessary cost loss. In addition, it should be noted that the fluid region control device Do for the electric ore, the fluid region control device 320 for cleaning, and the fluid region control device 720 for polishing can process the specific region of the wafer. . Referring to Figure 26, a perspective view of one of the fluid zone control devices of the present invention is shown. As shown in the % diagram, the fluid zone control I can include a fluid zone control system 12 and a system 914, wherein the system 914 can be an anode system 1丨4, a line system 214, or a grinding system 714. The fluid region control device can perform a regional plating process, a cleaning process, or a polishing process on the semiconductor substrate no. The area to be treated here need not be limited to the crystal plane and the crystal side, and may correspond to any position on the semiconductor substrate 110, for example, to the rest of the semiconductor substrate 110 on the 24 200920882. It may correspond to a non-processing area, for example, the non-processing area may correspond to a certain peripheral area on the wafer. In other implementations, the area to be processed can be formed into the crystal face, the crystal back, the crystal side of the wafer, or any local area to be processed, and the rest of the wafer can correspond to the non-processed area. According to 1, the above-mentioned day (10) to control the body to (4) the position of the process fluid 'is therefore not like the sand electrochemistry process requires Wei Da Wei _ a large amount of electric mineral fluid. In addition, both the control fluid and the process fluid of the present invention can be recycled. After the control fluid or process fluid is recovered through the pipeline, it can be returned directly to the fluid zone control device (4) via another pipeline. Alternatively, the recovered process fluid blood control fluid can also be processed (10) or not treated immediately.

Continued use in the body_control device. In other words, the invention can be based on the recovery flow = or recovery class _ 嶋 dirty _ pre-circulation fluid: Ding to the recovery of the fluid or recovery of the sputum fluid for appropriate separation step Body transport wheel fine control device ===Easy and instantaneous adjustment of the composition of the process fluid than the sophomore = the situation of 'no need to spend lengthy time and cost = cost to replace the hybrid, can also reduce the process flow _ usage. In addition, this description can also provide a 埶mV according to the process requirements. The device 5 is placed in the fluid control device, == or process fluid, thereby increasing the reaction temperature required for the process or speeding up the reaction. 25 200920882 On the other hand, 'the fluid zone control device of the present invention can reduce the amount of __ 财 杂 杂 杂 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The part processed by the process 'so can be electrochemically charged (four) to the metal layer, omitting the edge metal removal step (edge bevd _va丨qing, shiptown), thereby saving process time and process cost' and reducing The complexity of the process. Since the present invention can control the fluid to replace the conventional container to control the position of the process fluid, it can break the limitations of the conventional device and develop a variety of processes _ equipment. Please refer to _ 27 to Figure 29 is a schematic view showing a fourth embodiment of the present invention; a schematic diagram of the process operating device 35Q of the present invention, and a second schematic view of the conveying device 372 shown in Figure 27, and Figure 29 is a Figure 27 is a schematic cross-sectional view of the process operating device 35G in the middle layer, wherein the same elements or parts are denoted by the same reference numerals. As shown in Figures 27 to 29, the process operating device 350 includes a columnar abutment. 36〇, an automatic pr〇cess control system (Apc system) 324, a plurality of fluid region control devices 322, at least one loading/unloading device (adinging/unk) ading device 366 and at least one transport Device 372. The columnar abutment 36A can be an upright vertical abutment wherein the 'operational device 350 includes an upper layer, a middle layer and a lower layer, and each layer can be connected to six process devices. In this embodiment, the middle layer One of the process devices may be the aforementioned loading/unloading device 366, and the remaining process devices may include a fluid region control device 322 or other required reaction chambers. The automatic process control system 324 can instantly detect the process. The process effect of the operating device 35〇 is used to instantly adjust the parameter settings of each of the 26 200920882 processes. The fluid region control device 322 may have the structure of the fluid region control device 220, the fluid region control device 320 or the fluid region control device 720 described above, and is located At least a side of the columnar abutment 360 for conducting an electrochemical ore process, a cleaning process, or a chemical mechanical study on the semiconductor substrate no Processes and the like have fluid semiconductor processes. In other words, each fluid region control device 322 has a substrate carrying base 30 and a process system 368. When the fluid region control device 322 is applied to the electrochemical plating process, The process system 368 can be an anode system 1 η; when the fluid zone control device 322 is applied to the cleaning process, the process system 368 can be the official line system 214; when the fluid zone control device 322 is applied to the chemical mechanical polishing process, the process system 368 Then, it may be a grinding system 714; as shown in Fig. 29, the columnar base 36 includes a cylindrical bracket 362 and a casing 364 having a prismatic structure. In the present embodiment, the outer casing 364 is a hexagonal structure having six sides. The cylindrical bracket 362 can be coupled to five process systems 368 and a load/delivery device 366 on the intermediate layer, and each process system gauge blood loading/unloading device 366 can correspond to the side of the outer casing 364. In other embodiments of the present invention, the columnar abutment 36G may include a bracket and an outer casing of any shape, such as various angular post brackets, spiral brackets, or cylindrical outer diameters and the like. A delivery device 372 is located around the columnar abutment for transferring a plurality of semiconductor substrates no to the manned/loaded device 366, respectively. When the process operation is to be performed, the mechanical arm 374 of the transport device 372 can be slid to the place where the semiconductor substrate to be processed is located to capture a semiconductor substrate 11〇. Thereafter, the semiconductor substrate 11 is moved and rotated by the transport device 372 such that the semiconductor substrate 110 is placed in parallel on the platform of the loading/unloading device 366. The loading/unloading device 366 is disposed parallel to the side of the columnar base 36〇 to "sand" and/or unload the semiconductor substrate (10) to the columnar base 36〇. There may also be a vacuum chuck for holding the semiconductor and the bottom 110. The robot arm 374 is preferably a muUiple blades robot arm that is freely rotatable at its joints so that the robot arm 374 can be grasped and moved in three dimensions. After the single semiconductor substrate 110 is placed on the loading/unloading device 366, the columnar base can be horizontally rotated and/or moved up and down, and the semiconductor substrate 110 is placed on a body area control device 322. After the seat 13 is turned, the loading device 366 is then rotated back to the position corresponding to the milk of the transfer device. The rotation of the I set 372 can repeat the aforementioned transfer step to transfer the next semiconductor 2 until the process operation device 35 Each of the substrate carrying bases of each layer is filled with a semiconductor substrate 110. The latter can be used to simultaneously grind the semiconductor substrate (10) into four sub-processes, crystal planes/crystal backs/crystals. The cleaning process, the chemical mechanical process, and/or the 1 chemical mechanical polishing process. After the process is completed, the cylinders are horizontally rotated and/or moved up and down to thin the bases of the semiconductor substrates 110. Thereafter, The cylindrical holder 362 can be further loaded with the semiconductor substrate 110. In other embodiments of the invention, the fluid region control device 322 and the loading/unloading device 366 The position, and the process performed by the fluid zone control device 322 can be interchanged or adjusted, and the process operating device 350 can also include other types of process equipment, such as a drying device. The present invention utilizes a control fluid to control process fluid. The position, rather than the conventional process, is to immerse the semiconductor substrate 1 10 in the solution tank, so in this embodiment, the fluid region control device 322 is not limited to the horizontal placement mode, but the semiconductor substrate 110 and the fluid region control device can be The 322 is all upright. Therefore, the process operating device 350 can be designed as an upright device and vertically integrate the loading/unloading device 366 into the process operating device 350, thereby effectively saving the floor space of the process operating device 350. In addition, the process operating device 35 can also perform batch processing on the semiconductor substrate 110, thereby greatly increasing the throughput of the process. In addition, the present invention can also integrate the fluid region control device with various different reaction devices. Process operation equipment. Please refer to Figure 3, and Figure 3 shows the present invention. A schematic diagram of a process operating device 45A of the fifth preferred embodiment, wherein the same parts or parts are still indicated by the same symbols. As shown in FIG. 3, the process operating device 450 includes an automatic process control system 324. a loading/unloading device 466, at least one fluid region control device 420, at least one transport device 472, at least one seed crystal> an integrative reaction chamber 478, at least one barrier layer deposition reaction chamber 482, at least one drying reaction 29 200920882 chamber 484 is coupled to at least one pre-deposition reaction chamber 486 (e.g., solvent cleaning or plasma cleaning chamber). In this embodiment, delivery device 472 can be a robotic arm. After the semiconductor substrate 110 is placed in the loading/unloading device 466 of the process operating device 450, the transport device 472 can transfer the semiconductor substrate 110 to and from the loading/unloading device 466, the fluid region control device 420, and the seed deposition reaction chamber. 478, a barrier deposition reaction chamber 482, a drying reaction chamber 484, and a pre-deposition reaction chamber 486. The loading/unloading device 466 can be used as a loading device at the same time, and in other embodiments, the process operating device 450 can further include a loading device. The fluid region control device 420 may have the foregoing structure of the fluid region control device 220, the fluid region control device 320 or the fluid region control device 720 for performing an electrochemical plating process, a cleaning process or a chemical machine on the semiconductor substrate 1 Grinding processes and the like have various semiconductor processes with fluids. The seed deposition reaction chamber 478 can be used to perform a seed deposition process on the semiconductor substrate 110. The barrier layer deposition reaction chamber 482 can be used to perform a barrier layer deposition process on the semiconductor substrate no. The dry reaction chamber 484 can be used to the semiconductor substrate 110. A drying process and/or a tempering process is performed, and the pre-deposition chamber 486 is used to perform a pre-deposition process on the semiconductor substrate 110. It is particularly noted that the reaction chambers such as the seed deposition reaction chamber 478, the barrier deposition reaction chamber 482, the dry reaction chamber 484, and the pre-deposition chamber 牝6 are not actually necessary elements of this embodiment. The main feature of this embodiment is that the fluid region control 30 200920882 of the present invention requires a large electric charm reduction. * It is necessary to cut the semiconductor substrate η 〇 between the cathode electrode and the fixed component. No browning is required in a vacuum environment, so it can be easily integrated with other various reaction devices to integrate the same process equipment. Therefore, it should be understood by those skilled in the art that the seed deposition reaction chamber 478, the barrier deposition reaction chamber 2, the dry reaction chamber 484, and the pre-deposition reaction chamber injury of the present embodiment may actually be The process chamber is replaced by, for example, a post-deposition (P〇st_dep〇siti〇n) reaction chamber, a grinding process reaction crucible, a Lai process chamber, any chemical vapor deposition reaction chamber, or any physical vapor deposition reaction chamber, and the like. Referring to Fig. 31, Fig. 31 is a schematic view showing a process operating device 850 according to a sixth preferred embodiment of the present invention, wherein the same elements or portions are denoted by the same reference numerals. As shown in FIG. 31, the process operating device 85 is an all-in-one system or a cluster system, and includes an automatic process control system 324 and at least one load port (i). 〇a (j part) 816, at least one single wafer l〇ad lock chamber (SWLL Chamber) 830, two pre-cleaning chambers 840, 822, at least one helium/nitrogen a Ta/TaN deposition chamber 852, at least one copper seed deposition reaction chamber 812, two buffer chambers 832, 842, and two copper electrochemical electric (Cu ECP) reaction chambers 860, 802, two copper chemical mechanical polishing (cu cmp) reaction chambers 870, 890, at least one cap layer reaction chamber 880, and three robot arms 872, which can be used without breaking the vacuum Perform all process steps. 200920882 — Load 埠 816, which is used to load the wafer cassette, which is the entrance and exit of the wafer cassette into and out of the process operation equipment 850 to provide wafer processing. To enable the technology suitable for the mini environment, the load 埠 816 can be loaded. Having at least one wafer interface 81〇. The circular interface 81〇 can be a standard mechanical interface (SMIF) for loading at least one standardized SMIF type wafer cassette. Alternatively, the wafer interface 81 of the 埠816 can also be used for an open integrated compartment. A wafer cassette in the form of a front opening unified pod (FOUP). It should be noted that the process operating device 850 can include a plurality of loading ports 816, and the loading port 816 can have a plurality of wafer interfaces 81〇, and the loading ports 8 The 丨6 or wafer interface 810 can be mounted anywhere in the process operating device 85. The single-turn yen carrier chamber 830 can have a directional aligner for aligning the wafer. Orientation, or aligning the notch (n〇tch) to the position it is positioned on - or a single day yen carrying £830 can be used to degas (snap), cool, puff, Purification, etc. The pre-cleaning reaction chamber 84〇 and the pre-cleaning reaction are 822. The wafer can be pre-cleaned before the deposition process of the wafer. The titanium-recovered titanium deposition reaction chamber 852 is used for the crystal. Depositing a titanium metal layer on the round surface / or a vaporized titanium layer, a titanium metal layer of titanium can be used as a barrier layer between the dielectric layer and the copper layer, a "L" reaction chamber 812 can deposit a copper seed layer on the surface of the wafer . The cushioning pin 32 and the buffer chamber 842 can be used as an orientation flat aligner, and the wafer can be degassed to cool 17 air, cold: net, anneal or measurement (meir〇1〇gy) and the like. , the steel private sub-mine reaction chamber 860 and the copper electrochemical electro-mine reaction chamber 8〇2 may have the structure of the aforementioned fluid region control device 22〇 for conducting a semiconductor on the semiconductor substrate 2009ι32 32 200920882 chemical electric mining system The surface of the copper seed layer is coated with a desired copper layer. The copper chemical mechanical polishing reaction chamber 87A and the copper chemical mechanical polishing reaction chamber 890 may have the structure of the aforementioned fluid region control device 720 for performing a chemical mechanical polishing process on the semiconductor substrate 110. In addition, a copper electrochemical electrowinning reaction chamber, a copper electrochemical electrowinning reaction to 802, a copper chemical mechanical polishing reaction chamber 870, and a copper chemical mechanical polishing reaction chamber 890 white T are subjected to a pre-cleaning process for the X-half-body substrate u〇. , after cleaning (p〇st

ClCai—or—drying process. The cover layer reaction chamber 880 is formed on the surface of the wafer and a retanning layer to protect the surface of the wafer, so as to prevent the copper layer of the wafer from being oxidized to form an oxide after leaving the process insertion device 850, and the outside can be avoided. The contaminant contacts the layer or device of material beneath the cover. In this embodiment, the robotic arm 872 can be a single-piece mechanical arm or a multiple blade mechanical arm. After the wafer is placed in the process operating device 850, the robot arm 872 can transport the wafer to and from the assembly 816, the single wafer carrier chamber 830, the buffer chambers 832, 842, and the reaction chambers 802, 812, 822, 84, Between 852, 860, 870, 880, and 890. It should be understood by those skilled in the art that it is replaced by the process of the product and the quality of the product (quaHty), which is replaced by the reaction chamber of the second process, such as the post-deposition reaction chamber and the process reaction. Room, any chemical vapor deposition reaction chamber or any physical vapor deposition reaction chamber, and the like. In this embodiment, a copper process is used to illustrate the application of the present invention to a back-end-of-the-H-process (BEOL process) ^^^^ ft process device, which has the general knowledge in the technical field. It is understood that the present invention is not limited to the copper process' and can be used to form any desired material layer or semiconductor structure, and the 'invention can also be used as a semi-conductor 1U in the process operation equipment. Transport medium. Referring to Fig. 32, there is shown a schematic diagram of a process operating device 55_ of a seventh preferred embodiment of the present invention, in which the same elements or impurities are still indicated along the wire. As shown in FIG. 32, the process operating device 550 already includes an automatic process control system 324, a manned/loaded device yang, at least one fluid region control device 520, at least one conveyor belt 572, and at least one seed deposition reaction chamber. At least one barrier layer deposition reaction chamber, at least - the drying reaction chamber is thoroughly and at least one pre-deposited reflection. The 'zone gambling woven 5 rider has the structure of the fluid region control device 220, the fluid region control device 32 or the fluid_control device' for performing an electrochemical keying process, a cleaning process or a semiconductor substrate Chemical mechanical polishing process and other processes. The main difference between the fifth embodiment and the fifth embodiment is that the conveying device of the present embodiment includes a carrier belt 572. When the semiconductor substrate is processed into a process operation device, the load carrier 572 can carry the semiconductor substrate back to the flow n, the control device 420, the seed deposition reaction chamber 478, and the barrier deposition reaction chamber 4 82, between the dry reaction 1484 and the pre-deposition reaction chamber injury ^ because the fluid of the present invention = control relay 52 〇 does not change the pre-material conductor base between the cathode electrode and the s-piece, so the operation The device 55() only needs to use a simple conveyor belt 34 200920882 572 to receive the process processing of the (10) material base. The traditional electrochemical plating device, the value meter, and the main ice 1 grinding device are usually open type (four). First:: The two butterfly chemical machine is studied in the surrounding environment, so that the chemical substances in the device are easily dispersed. The chemical _, therefore, may allow the surrounding devices to integrate with each other. The present invention is controlled by the control device itself and the fluid region control unit because the amount of the process is reduced and the amount of other processes is reduced, and the process flow of the f-process (10) _ is used. The fluid zone control device can overcome the integration of the reaction device with the same weight and the weight of the F-integrated operation device. - Aspects can be = slanted conductors, secrets, equipment, round-trip, semiconductor-free reading (4) bribes, rushing, deductions can avoid oxides (four) two = greening, and then save equipment =:::: transmission robot f as a process operation The preferred embodiment of the _ price of 4 22 is shown in the eighth aspect of the invention is still used phase _ hour = 1 where the elearning element or part of the right 4 is not. As shown in Fig. 33, the process operating device 650 includes a 'process control system 324, at least one_region control device 62, and one input ^==::rt 674. Among them, the fluid area control weaving - the front mounting control device 220, the fluid area control weaving gamma or the fluid area control - white, ,,. The structure is used for performing an electrochemical plating process on the semiconductor substrate 110, a process of 35 200920882, a cleaning process, or a chemical mechanical polishing process. The robot arm 674 is used to transport the semiconductor substrate 110 to and from the conveyor belt 672 and the fluid zone control device 62, and the f672 is used to transfer the semiconductor substrate 110 into and out of the process operating device 650. When the processing of the fluid zone control means 62 is to be performed, the semiconductor substrate 1 to be processed is first transferred by the conveyor belt 672 to the periphery of the fluid zone control means 62. Next, the robot arm 674 loses the aforementioned semiconductor substrate and places the semiconductor substrate uq on the substrate carrier base 130 of the fluid region control device 620. Thereafter, the fluid zone control device 62 may first perform an electrochemical-axis or a cleaning process on the bottom of the semi-conducting county 11 (). After the completion of the process (four), the robot arm _ re-attaches the semiconductor substrate 1 to the conveyor belt 672, and the & conveyor belt 672 sends the semiconductor substrate m to the processing device. At this time, the manufacturing device can continue to process the next semiconductor substrate. It can be seen that 'the bottom of the semi-conducting county does not need to be placed between the cathode electrode and the fixed component' and does not need to be placed obliquely into the electric ore fluid. Therefore, the complexity of the present invention can be handled at the bottom of the semi-conducting county. Effectively extract the amount of the item. The substrate carrying base can be directly connected to its belt loop structure: the loading/unloading device of the semiconductor substrate can be omitted, and it is simpler than the prior art. The bottom transfer to the silent position accepts the process flow_process, so the transfer process = process and the semiconductor substrate infiltration 36 200920882 The above is only a preferred embodiment of the present invention, and the equivalent variation of the patent scope of the present invention And modifications are intended to be within the scope of the invention. [Simple Description of the Drawings] Figs. 1 to 3 are schematic views showing the process of the conventional electrochemical plating process. Fig. 4 is a cross-sectional view showing the fluid region control device of the first preferred embodiment of the present invention. Figure 5 is a cross-sectional view of the anode system shown in Figure 4. Figure 6 is a perspective view of a substrate carrying base of a preferred embodiment of the present invention. Figure 7 is a plan view showing a substrate carrying base of another preferred embodiment of the present invention. Figure 8 is a perspective view showing a cathode electrode of a preferred embodiment of the present invention. Figure 9 is a side elevational view showing a cathode electrode of another preferred embodiment of the present invention. Fig. 10 through Fig. 12 are schematic cross-sectional views showing the first, second, third and fourth lines of the present invention. Figure 13 is a cross-sectional view showing a fluid region control device in accordance with another preferred embodiment of the present invention. Fig. 14 through Fig. 18 are schematic views showing the operation method of the fluid region control device shown in Fig. 13. Fig. 19 is a cross-sectional view showing the fluid region control device of the second preferred embodiment of the present invention. Figure 20 is a cross-sectional view showing a fluid region control device according to still another preferred embodiment of the present invention. 21 to 24 are views showing the operation method of the fluid region control device shown in Fig. 19. Figure 25 is a cross-sectional view showing the fluid region control device of the third preferred embodiment of the present invention. Figure 26 is a schematic view showing the operation of one of the fluid region control devices of the present invention. Figure 27 is a schematic view showing a process operating apparatus of a fourth preferred embodiment of the present invention. Figure 28 is a perspective view of the conveying device shown in Figure 27. Figure 29 is a schematic cross-sectional view showing the process operation apparatus shown in Figure 27 in the middle layer. Figure 30 is a schematic view showing a process operating apparatus according to a fifth preferred embodiment of the present invention. Figure 31 is a view showing the process operation apparatus of the sixth preferred embodiment of the present invention. Figure 32 is a schematic view showing a process operating apparatus of a seventh preferred embodiment of the present invention. Figure 33 is a view showing the process operation apparatus of the eighth preferred embodiment of the present invention. [Main component symbol description] 10 Wafer 12 Plating bath 14 Anode system 16 Cathode electrode 18 Fixing assembly 20 Plating device 38 200920882 22 Electroplating fluid 24 Anode electrode 26 Filter film 28 Diffusion film 30 Anode chamber 32 Electroplating fluid supply line 110 Semiconductor substrate 114 Anode System 116 Cathode Electrode 118 Anode Chamber 120 Fluid Zone Control System 124 Anode Electrode 126 Filter Film 128 Diffusion Film 130 Substrate Carrier Base 130a Conveyor Belt 130b Annular Structure 132 First Line 134 Second Line 136 Fifth Line 142 Third Line 144 Fourth Line 146 Sixth Line 148 Seventh Line 152 Sidewall 154 Control Fluid 156 Plating Fluid 158 Abrasive Slurry 214 Line System 216 Fixing Assembly 220 Fluid Zone Control 256 Cleaning Fluid 320 Fluid Zone Control 322 Fluid Zone Control 324 Automatic Process Control System 350 Process Operating Equipment 360 Column Abutment 362 Cylindrical Bracket 364 Housing 366 Loading/Unloading Device 368 Process System 372 Conveying Device 420 Fluid Zone Control Device 450 Process Operating Device 39 20 0920882 466 Loading/unloading device 472 Conveying device 478 Seeding deposition reaction chamber 482 Barrier layer deposition reaction chamber 484 Drying reaction chamber 486 Pre-deposition reaction chamber 520 Fluid region control device 550 Process operating device 572 Conveyor belt 620 Fluid region control device 650 Process Operating Equipment 672 Conveyor Belt 674 Robotic Arm 720 Fluid Zone Control 714 Grinding System 722 Sensor 724 Grinding 塾 Mounting 751 Grinding 塾 802 Copper Electrochemical Plating Reaction Chamber 810 Wafer Interface 812 Copper Seeding Deposition Reaction Chamber 816 Loading埠 822 Pre-cleaning reaction chamber 830 Single-wafer carrying chamber 832 Buffer chamber 840 Pre-cleaning reaction chamber 842 Buffer chamber 850 Process operating equipment 852 Tantalum/tantalum nitride deposition reaction chamber 860 Copper electrochemical plating chamber 870 Copper chemical mechanical grinding reaction chamber 872 Robot Arm 880 Covering Reaction Chamber 890 Copper Chemical Mechanical Grinding Reaction Chamber 914 System 40

Claims (1)

200920882 X. Patent Application Range: 1. A fluid zone control device for electroplating, comprising: at least one substrate holder for carrying at least one semiconductor substrate; at least one cathode electrode ' Provided on the substrate carrier base for electrically connecting the semiconductor substrate; at least one anode system 'located above the substrate carrier base, substantially corresponding to the semiconductor substrate, and the substrate carrier a seating distance - a reaction height, between the anode system and the cathode electrode defining at least one area to be treated and at least one non-processing area; at least one confluing fluid supply tube 'corresponding to the non-treatment a region for providing at least one control fluid; at least one control fluid replenishing tube, corresponding to the non-treatment region, for setting up the control fluid; at least one process fluid supply conduit ( Process fluid tube), corresponding to the pending Field is provided for supplying at least one electrical ore fluid; process fluid and at least one covering line (process fluid recovering tube), corresponding to the region to be treated is provided 'for recovering the electric mining fluid. 2. The fluid zone control device of claim 1, wherein the fluid zone control device is applied to at least one electro chemical plating (ECP) process. 41 200920882 3. The fluid zone control device of claim 1, wherein the control flow system is a liquid state, a gas state, a vapor state (Vah state) or a gel state. 4. The fluid region control device according to claim 4, wherein the semiconductor substrate is a wafer, the region to be processed corresponds to a crystal plane of the wafer, and the non-processing region corresponds to the wafer Crystal edge. The fluid region control device comprises: at least one substrate carrying base for carrying at least one semiconductor substrate, wherein the substrate carrying base defines at least one to-be-processed area and at least one non-processing area; at least one fixed An assembly disposed on the substrate carrying base for fixing the semiconductor substrate; at least one control fluid supply line disposed corresponding to the non-processing area for providing at least one control fluid; at least one control fluid replenishing line corresponding to Providing 'for the recovery of the control fluid in the non-treatment area; at least one process fluid supply line corresponding to the area to be treated for providing at least one process fluid; and at least one process fluid replenishment line corresponding to the Set for the area to be treated for recycling the process fluid. 6. The fluid zone control device of claim 5, wherein the fluid 42 200920882 zone control device is applied to at least one solvent cleaning process, at least one electroless plating process or At least one wafer backside/bevel clean process. The fluid region control device of claim 5, further comprising at least one tube system located above the substrate carrier base, substantially corresponding to the semiconductor substrate, and The substrate carrier pedestals are separated by a reaction height. 8. The fluid zone control device of claim 5, further comprising at least one polishing system disposed above the substrate carrier base on the body corresponding to the semiconductor substrate. 9. The fluid zone control device of claim 8, wherein the polishing system comprises at least one abrasive crucible. 10. A process operating apparatus comprising: at least one columnar abutment; and at least one fluid zone control device located on at least one side of the columnar abutment, the fluid zone control device comprising: a small-substrate bearing The pedestal is disposed parallel to the side of the columnar base for carrying at least one semiconductor substrate; at least one fixing component for fixing the semiconductor substrate; 43 200920882 system for reducing service, providing at least one-night process a fluid replenishing pipeline for recovering the -' at least the controllable body providing the pipeline, the private conductor = body; the small for providing at least the control fluid; and the surrounding of the material body to control the fluid replenishing pipeline, Set to use (four) _ control _. , shooting around the substrate u. As described in the scope of patent application, the automatic process control system C (Csystem). Work. Qin further comprises at least - (four) axis (10), which is the columnar base. The columnar base 13. The process operating device according to claim 10 of the patent scope has a plurality of sides. 14. The tampering operation device according to claim 10, further comprising a small loading/unloading device (丨03出叩/11111〇3出叩(^&), located in the columnar beauty At least one side of the process substrate for loading/unloading the semiconductor substrate. The process device of claim 14, wherein the loading/loading The device is disposed parallel to the side of the braided abutment. 44 200920882 16. At least the substrate operating device described in claim 14 is further provided with a delivery device located at the column base. Around the table, for guiding the semiconductor to the loading/carrying device. 4 'Re-(four) semiconductor substrate is placed on the manned/carrying device for loading/unloading device 'where the 桎-shaped base 18. The process console of claim 10 has the function of horizontal rotation and up and down movement. 19. The process of claim 1G is a cathode electrode, and is electrically connected to the semiconductor base. Bottom. ', " fixed group conversion equipment, purely contains at least a sensor. The % pole system comprises at least one anode electrode and at least - 21::==^rTM or at least - crystal plane_crystal edge cleaning process, a process, at least one polishing process 22. A process operation device comprising: a semiconductor a substrate; at least a manned fiber device for patterning/loading at least 45 200920882 - at least one transport device for transporting the semiconductor substrate; at least one seed crystal deposition reaction chamber for performing at least one crystal of the semiconductor substrate And a deposition process; and at least one fluid region control device, comprising: at least one substrate carrying base for carrying the semiconductor substrate; at least one fixing component for fixing the semiconductor substrate; at least one process fluid supply pipeline for Providing at least one process fluid; at least one process fluid replenishing line for recovering the process fluid; at least one control fluid supply line disposed around the semiconductor substrate for providing at least one control fluid; and at least one controlling fluid back A supplemental pipeline is disposed around the semiconductor substrate for recovering the control fluid. The process operating device of claim 22, further comprising at least a barrier layer deposition reaction chamber for performing at least one barrier layer deposition process on the semiconductor substrate. 24 as described in claim 22 The process operating device further comprises at least one automatic process control system (APC system). 25. The tampering operation device according to claim 22, further comprising at least a drying reaction chamber for performing the semiconductor substrate At least one drying process and/or a tempering process. 46 200920882 26. The process operating device of claim 22, further comprising at least one pre-deposition reaction chamber for performing at least one pre-treatment of the semiconductor substrate Deposition process. 27. The process operating device of claim 22, wherein the fixed component is a cathode electrode and is electrically connected to the semiconductor substrate. 28. The process operating device of claim 27, further comprising at least one anode system, wherein the anode system comprises at least one anode electrode and at least one sensor. 29. The process operating device of claim 22, wherein the fluid region control device is configured to perform at least one electrochemical plating process, at least one crystal face/crystal back/crystal edge cleaning process on the semiconductor substrate, At least one chemical mechanical polishing process and/or at least one electrochemical mechanical polishing process. 30. The process operating device of claim 22, wherein the process operating device is an all-in-one system or a cluster system. The process operating device of claim 22, wherein the process operating device is applied to at least one Cu process. 32. The process operating device of claim 22, wherein the delivery device comprises at least one robotic arm or at least one conveyor belt. 47 200920882 33. The method of operating a seed region control device, comprising: providing at least one fluid region control device, the fluid region control device comprising at least one substrate carrying base, at least one control fluid supply line, and at least one control fluid Replenishing the pipeline, and the fluid region control device defines at least one to-be-processed region and at least one non-processing region; k is provided for at least one semiconductor substrate, the semiconductor substrate is fixed on the substrate carrier base; and the control fluid supply pipeline is opened Replenishing the line with the control fluid such that at least the control fluid continues to flow out of the control fluid supply line and into the control fluid replenishing line, wherein the control fluid flows through the non-processing area of the fluid zone control device; At least one process fluid contacting the area to be treated of the fluid zone control device, and the process fluid is insoluble in the control fluid. The method of claim 33, wherein the method of operation is applied to at least one electrochemical plating process, at least one crystal face/crystal back/crystal edge cleaning process, at least one chemical mechanical polishing process, or at least An electrochemical mechanical polishing process. The operating method of claim 3, wherein the process flow system is an electroplating fluid, a cleaning fluid, a supercritical fluid or a polishing slurry. 36. The method of operation of claim 33, wherein the control flow system is a liquid state, a gas state, a vapor state, a supercritical fluid, or a colloidal state. 48 200920882 - 37. The method of operation of claim 33, wherein the semiconductor substrate is a wafer. 38. The method of operation of claim 37, wherein the area to be treated corresponds to a crystal plane of the wafer, and the unprocessed area corresponds to a crystal edge of the wafer. 39. The method of operation of claim 37, wherein the area to be treated corresponds to a crystallographic edge of the wafer, and the non-processed area corresponds to a crystal plane of the wafer. 4. The method of operation of claim 37, wherein the area to be treated corresponds to a crystal plane of the wafer, and the non-process area corresponds to a crystal back of the wafer. The method of claim 37, wherein the area to be processed corresponds to a crystal back of the wafer, and the non-process area corresponds to a wafer of the wafer having 42 The method of operation of claim 37, wherein the one active area and the at least one peripheral area. 43. The method of operation of claim 42 is directed to the active area of the wafer, and the peripheral area of the circle 2009 200920882. XI. Schema: