200928190 九、發明說明： 【發明所屬之技術領域】 本發明係關於發光裝置。具體而言，本發明是一種可以 產生均勻光度，低發散性，頻寬帶窄的發光裝置。更具體 言之，本發明之發光裝置，係包含至少一個雷射二極體晶 片，及至少一個的發光二極體晶片的發光裝置。 【先前技術】 雷射二極體具有體積小，效益高，消耗功率小，使用壽 © 命長，並且容易由電流大小來調制其輸出功率的優點。電 射二極體的應用領域與其所發射之波長相關，短波長 (390〜950奈米）的雷射主要用於光碟機，雷射印表機，條 碼機，掃描器等光資訊及顯示用途，而長波長”⑽〜丨5〇〇 奈米）的雷射則主要用於光纖通訊。雷射二極體的發光特 性為橢圓形出光，且具低發散性、高強度，頻寬帶窄相 干性高。然而，也由於雷射二極體所發出的光，其頻寬帶 冑且相位-致’當光束投射至目標區域時，將會因干涉而 造成點狀分佈《另一方面，雷射二極體的注入電流必須大 於臨界電流密度，臨界電流密度與接面溫度有關，並且間 接影響效益。高溫操作時，臨界電流提高，效益降低，甚 至會損壞元件。 另一方面，發光二極體則具有亮度高，散熱效率高，使 用壽命長的優點，經常應用於針對電子標總與號諸，顯示 照明，高亮度顯示器等等。發光二極體發出之光譜頻寬帶 寬，因此當發光二極體光源投射在目標區域時，光度在目 123547.doc 200928190 標區域均勻分佈’並不會產生點狀分佈的現象。 傳統的雷射二極體封裝，如美國專利公告號us 7,〇60,515，在單一封裝體僅具有雷射二極體元件，或是如 美國專利公開號US200626703 7般僅具有發光二極體元件。 雷射二極體元件與發光二極體元件㈣出的光源在應用上 具有互補性。因此本發明欲解決的問題，在於如何使照明 裝置於應用時’在資料處理或通訊應用之場合，提供頻寬 ❹ ❿ 帶窄，相位一致之光束，而又能在需要照明時，提供光度 均勻之照明，提供適當之光譜照明。 【發明内容】 本發月之目的，在於如何於發明或照明裝置應用時 針對光譜頻寬帶的需求，提供適當之發光光譜及照明。 本發明揭示-種發光裝置，至少包含有一個基座，而 該基座上，具有一個或多個雷射二極體晶片，及一個或 個發光二極體晶片，其中至少—個雷射二極體晶片及一 發光二極體晶片配置於該基座上。 使應用於需要極窄光譜頻寬帶之應用時，能夠具有雷 二極體特性的照明。而在不需要極窄光譜頻寬帶之應 時’能夠具有光度均勻的發光二極體特性 。 【實施方式】 * 一種發光裝置，至少包含有 具有一個或多個雷射二極體晶 體晶片，其中至少一個雷射二 晶片配置於該基座上。 —個基座，而在該基座上， 片，及一個或多個發光二極 極體晶片及一個發光二極體 123547.doc 200928190 圖1所示為第一實施例’ 一種發光裝置10，包含有一個 下基座11，一個頂座（header)12位於下基座11上’在頂座 12的一側邊有一次基座（submount) 13，而在次基座的一侧 有至少一雷射二極體晶片14,在下基座11相對於雷射二極 體之一位置有一檢光二極體15，一般而言，檢光二極體的 位置15與雷射二極體晶片14的主要出光方向相反，如圖ia 所示’在頂座12上面，具有至少一個發光二極體晶片16， 發光二極體晶片也可以配置於下基座11上。而頂蓋（cap) 17 可蓋在下基座上’保護雷射二極體晶片與發光二極體晶 片’而頂蓋之一側有一透明的出光孔，可使雷射二極體晶 片與發光二極體晶片之發光’可經由此出光孔射出光源， 而數個導電接腳18與雷射二極體晶片14及發光二極體晶片 16電性接連’以提供雷射二極體晶片14及發光二極體晶片 16所需之電源。 雷射二極體晶片14包含有主出光方向141和次出光方向 142 ’主出光方向141與次出光方向ι42相反，而主出光方 向141與次出光方向142的強度之比例可由雷射二極體晶片 之薄膜製程決定。而位於次出光方向142上的檢光二極體 1 5可偵測次出光方向142的強度，並且將光訊號轉為電流 訊號’藉以回饋修正雷射二極體主出光方向141的強度。 下基座11上的頂座12的材料為高導熱材料金屬，可藉 以傳導雷射二極體晶片14和發光二極體晶片16產生的熱， 而次基座13材料則為絕緣材料，如陶瓷材料。根據此發 明’雷射二極體晶片14與發光二極體晶片16可以經由相同 123547.doc 200928190 的散熱路徑散熱。 在本發明實施例1，在次基座的同一侧邊或不同側邊可 具有數個雷射二極體晶片，而該等雷射二極體晶片可以是 相同波長或不同波長，並且每一雷射二極體晶片可單獨控 制其出光強度β而在次基座上也可具有數個發光二極體晶 片’而每個發光二極體晶片亦可同色或不同色。雷射二極 體與發光二極體可以同時出光，或依需求僅有雷射二極體 ©晶片出光，或僅發光二極體晶片出光。不同波長的雷射二 極體晶片與發光二極體晶片共同封裝於同一構裝單元，可 達到構裝體積小，成本低，應用範圍廣泛等優點。 第二個實施例如圖2所示，發光裝置20,包含有一個下 基座21 ’ 一個或多個頂座（header)22，頂座22之側壁有一 預疋角度α之斜度，α可大於或等於〇，而頂座22之上方有 一預定角度β之斜度，β可大於或等於〇,在頂座之不同側 邊可以具有不同傾斜角度的α，而頂座上方可具有多個不 ❹ 同大小的Ρ，而頂座22上的任一側壁有一個或多個次基座 (submount)23，在次基座上有至少一個雷射二極體晶片 24，次基座23與雷射二極體晶片24也可以在具有β角度的 頂座上。在相反於雷射二極體晶片24主出光方向之相對位 置可配置檢光二極體25，以偵測該等雷射二極體晶片的 出光效能’藉以回饋調制雷射二極體的出光強度。在頂座 22之側壁或上方，具有至少一個發光二極體晶片16。數個 導電接腳28在基座周圍，與雷射二極體晶片與發光二極體 晶片電性相接’以提供雷射二極體晶片24及發光二極體晶 123547.doc 200928190 片26所需之電源。 雷射二極體晶片24的出光方向，與發光二極體晶片26的 出光方向由頂座的設計角度〇1與|3所控制，而使數個雷射二 極體晶片24的出光方向可以是平行或不平行，相同地，數 個發光二極體晶片26的出光方向可以是平行或不平行，而 雷射二極體晶片24與發光二極體晶片26的出光方向，亦可 彼此間平行或不平行。出光方向依應用之需求而設計。 相同於實施例1，每一個雷射二極體晶片與發光二極體 晶片可以獨立控制。每一個雷射二極體的出光強度可以由 其對應的檢光二極體25所偵測，並回饋控制。每一個構裝 單元可以容納數個相同或不同波長的雷射二極體，以及相 同或不同發光顏色的發光二極體，因此可以在有限的體積 内’使應用範圍更加廣泛。 本發明第二種實施態樣如圖3所示，一種發光裝置30， 包含有一個下基座31，一個或多個頂座32,頂座32具有一 個或多個次基座33，而該次基座可具有一預定之γ角度，γ 可大於或等於0，一個次基座33上可配置一個或多個雷射 二極體晶片34及一個或多個發光二極體晶片36，因基座具 有預定的γ角度’而每一個次基座的γ可以相同或不同，使 母一個雷射二極體晶片34及每一個發光二極體晶片36的出 光方向可以平行或不平行，出光方向依應用之需求而設 計。每一個雷射一極體晶片與發光二極體晶片可以獨立控 制。每一個雷射二極體的出光強度可以由其對應的檢光二 極體35所偵測，並回饋控制。 123547.doc -10- 200928190 第四個實施例如圖4所示，一種發光裝置4〇包含有一個 下基座41，一個或多個頂座42,頂座42具有一個或多個次 基座43，而每一次基座上配置一種可發光之晶片44，而該 晶片44具有雷射二極體特性單元與發光二極體特性單元， 而該晶片的雷射二極體出光角度與發光二極體出光角度間 具有一預定之Θ夾角’Θ可以大於等於〇，此外由頂座42、 次基座43的設計及晶片元件之設計，亦可決定該發光晶片 的雷射二極體單元及發光二極體單元的出光方向。 © 【圖式簡單說明】 圖1所示為依據本發明之第一實施例的發光裝置。 圖2所示為依據本發明之第二實施例的發光裝置。 圖3所示為依據本發明之第三實施例的發光裝置。 圖4所示為依據本發明之第四實施例的發光裝置。 【主要元件符號說明】 1(>、20、40 發光裝置 11、21、31、41 下基座 φ 12、22、32、42 頂座 13、23、33、43 次基座 14 、 24 、 34 、 44 141 142 15 、 25 、 35 16、36 17 雷射二極體晶片 主出光方向 次出光方向 檢光二極體 發光二極體晶片 頂蓋 18、28 123547.doc 導電接腳 -11-200928190 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light-emitting device. Specifically, the present invention is a light-emitting device which can produce uniform luminosity, low divergence, and narrow frequency band. More specifically, the light-emitting device of the present invention is a light-emitting device comprising at least one laser diode wafer and at least one light-emitting diode wafer. [Prior Art] The laser diode has the advantages of small size, high efficiency, low power consumption, long life, and easy modulation of its output power by current magnitude. The application field of the electric diode is related to the wavelength of the emitted light. The short-wavelength (390~950 nm) laser is mainly used for optical information and display purposes such as optical disc printers, laser printers, barcode printers, scanners, etc. The long-wavelength "(10) ~ 丨 5 〇〇 nanometer" laser is mainly used for fiber-optic communication. The illuminating characteristics of the laser diode are elliptical light, and have low divergence, high intensity, and wide bandwidth. High, however, also due to the light emitted by the laser diode, its frequency is wide and the phase-induced 'when the beam is projected onto the target area, it will cause a point distribution due to interference. The injection current of the diode must be greater than the critical current density, and the critical current density is related to the junction temperature, and indirectly affects the efficiency. When operating at high temperature, the critical current is increased, the efficiency is reduced, and even the component may be damaged. On the other hand, the light-emitting diode It has the advantages of high brightness, high heat dissipation efficiency and long service life, and is often applied to electronic standard and number, display illumination, high-brightness display, etc. Spectral bandwidth emitted by the light-emitting diode Wide, so when the light-emitting diode source is projected on the target area, the luminosity is evenly distributed in the target area of the 123547.doc 200928190 and does not produce a point-like distribution. Traditional laser diode packages, such as the US patent notice No. 7, 7, 60, 515, having only a laser diode element in a single package, or only a light-emitting diode element as in US Patent Publication No. US200626703 7. Laser diode element and light-emitting diode element (4) The light source is complementary in application. Therefore, the problem to be solved by the present invention is how to provide a light beam with a narrow bandwidth and a uniform phase in the application processing or communication application when the lighting device is applied. In addition, when the illumination is needed, it provides illumination with uniform luminosity and provides appropriate spectral illumination. [Invention] The purpose of this month is to provide appropriate illumination for the needs of spectral bandwidth and broadband when inventing or lighting device applications. Spectroscopic and illumination. The invention discloses a light-emitting device comprising at least one base, and the base has one or more lasers a body wafer, and one or two LED chips, wherein at least one of the laser diode chips and one of the light emitting diode chips are disposed on the base. When applied to applications requiring extremely narrow spectral frequency broadband, Illumination capable of having the characteristics of a lightning diode, and capable of having a uniform light-emitting diode characteristic when an extremely narrow spectral frequency broadband is not required. [Embodiment] A light-emitting device comprising at least one or more a laser diode crystal wafer, wherein at least one of the laser two wafers is disposed on the pedestal. A pedestal on the pedestal, a sheet, and one or more illuminating diode chips and a illuminating Diode 123547.doc 200928190 Figure 1 shows a first embodiment 'an illumination device 10 comprising a lower base 11 on which a header 12 is located on the lower base 11' There is a submount 13 on the side, and at least one laser diode 14 on one side of the submount, and a photodiode 15 on the lower base 11 opposite to the position of the laser diode. In general, the detection diode The position 15 of the body is opposite to the main light-emitting direction of the laser diode wafer 14, as shown in FIG. 1A, above the top seat 12, having at least one light-emitting diode wafer 16, and the light-emitting diode wafer can also be disposed under On the base 11. The cap 17 can be covered on the lower base to protect the laser diode chip and the LED chip, and a transparent light-emitting hole is formed on one side of the top cover to enable the laser diode and the light emitting body. The light emitting of the diode wafer can be emitted through the light exiting aperture, and the plurality of conductive pins 18 are electrically connected to the laser diode wafer 14 and the LED wafer 16 to provide the laser diode wafer 14 And the power source required for the LED chip 16. The laser diode chip 14 includes a main light-emitting direction 141 and a secondary light-emitting direction 142. The main light-emitting direction 141 is opposite to the second light-emitting direction ι42, and the ratio of the intensity of the main light-emitting direction 141 to the secondary light-emitting direction 142 can be determined by the laser diode. The film process of the wafer is determined. The light-detecting diode 15 in the secondary light-emitting direction 142 can detect the intensity of the secondary light-emitting direction 142 and convert the optical signal into a current signal' to feedback the intensity of the modified laser diode main light-emitting direction 141. The material of the top seat 12 on the lower base 11 is a high thermal conductive material metal, which can conduct heat generated by the laser diode wafer 14 and the light emitting diode wafer 16, and the submount 13 material is an insulating material, such as Ceramic material. According to this invention, the laser diode 14 and the light-emitting diode wafer 16 can be dissipated via the heat dissipation path of the same 123547.doc 200928190. In Embodiment 1 of the present invention, there may be several laser diode wafers on the same side or different sides of the sub-base, and the laser diode chips may be the same wavelength or different wavelengths, and each The laser diode wafer can individually control its light intensity β and can also have several light emitting diode chips on the submount. Each of the LED chips can also have the same color or different colors. The laser diode and the light-emitting diode can emit light at the same time, or only the laser diode can be emitted as needed, or the light-emitting diode wafer can be emitted. The laser diode chips of different wavelengths and the LED chips are packaged together in the same package unit, which can achieve the advantages of small package size, low cost and wide application range. The second embodiment, as shown in FIG. 2, includes a lower base 21' having one or more headers 22, and the side wall of the top seat 22 has a slope of the pre-twist angle α, which may be greater than Or equal to 〇, and the top of the top seat 22 has a slope of a predetermined angle β, β may be greater than or equal to 〇, may have different inclination angles α on different sides of the top seat, and the top seat may have multiple ❹ The same size of the crucible, and either side wall of the top seat 22 has one or more submounts 23, and at least one laser diode wafer 24 on the submount, the sub base 23 and the laser The diode wafer 24 can also be on a top seat having a beta angle. The light-detecting diodes 25 may be disposed opposite to the main light-emitting direction of the laser diodes 24 to detect the light-emitting efficiency of the laser diodes, thereby modulating the light-emitting intensity of the laser diodes. . At least one light emitting diode wafer 16 is present on or above the sidewall of the top mount 22. A plurality of conductive pins 28 are electrically connected to the laser diode chip and the LED chip to provide a laser diode wafer 24 and a light-emitting diode crystal 123547.doc 200928190 26 The power supply required. The light-emitting direction of the laser diode wafer 24 and the light-emitting direction of the light-emitting diode wafer 26 are controlled by the design angles 〇1 and |3 of the top seat, so that the light-emitting directions of the plurality of laser diode wafers 24 can be Parallel or non-parallel, in the same way, the light-emitting directions of the plurality of light-emitting diode chips 26 may be parallel or non-parallel, and the light-emitting directions of the laser diode wafer 24 and the light-emitting diode chip 26 may also be between each other. Parallel or not parallel. The direction of light is designed according to the needs of the application. In the same manner as in Embodiment 1, each of the laser diode wafers and the light-emitting diode wafer can be independently controlled. The intensity of the light emitted by each of the laser diodes can be detected by its corresponding light-detecting diode 25 and fed back. Each of the components can accommodate several laser diodes of the same or different wavelengths, as well as light-emitting diodes of the same or different illuminating colors, so that the application range can be made wider in a limited volume. A second embodiment of the present invention is shown in FIG. 3. A light-emitting device 30 includes a lower base 31, one or more top seats 32, and the top seat 32 has one or more sub-bases 33. The sub-base may have a predetermined gamma angle, γ may be greater than or equal to 0, and one sub-base 33 may be configured with one or more laser diode wafers 34 and one or more light-emitting diode chips 36. The pedestal has a predetermined gamma angle 'and the γ of each sub-base may be the same or different, so that the light-emitting directions of the parent-pole laser diode 34 and each of the LED chips 36 may be parallel or non-parallel, and the light is emitted. The direction is designed according to the needs of the application. Each of the laser-pole wafers and the light-emitting diode chip can be independently controlled. The intensity of the light emitted by each of the laser diodes can be detected by its corresponding light-detecting diode 35 and fed back. 123547.doc -10- 200928190 Fourth Embodiment As shown in FIG. 4, a lighting device 4A includes a lower base 41, one or more top seats 42, and the top seat 42 has one or more sub-bases 43 And each time the pedestal is provided with a illuminable wafer 44, and the wafer 44 has a laser diode characteristic unit and a light emitting diode characteristic unit, and the laser diode output angle and the light emitting diode of the wafer The predetermined angle Θ of the light exiting angle Θ can be greater than or equal to 〇, and the design of the top seat 42 and the sub pedestal 43 and the design of the chip component can also determine the laser diode unit and the illuminating of the illuminating wafer. The direction of light exiting the diode unit. © [Schematic Description] Fig. 1 shows a light-emitting device according to a first embodiment of the present invention. Fig. 2 shows a light emitting device according to a second embodiment of the present invention. Fig. 3 shows a light-emitting device according to a third embodiment of the present invention. Fig. 4 shows a light-emitting device according to a fourth embodiment of the present invention. [Description of main component symbols] 1 (>, 20, 40 illuminators 11, 21, 31, 41 under susceptors φ 12, 22, 32, 42 top seats 13, 23, 33, 43 sub-bases 14, 24, 34, 44 141 142 15 , 25 , 35 16 , 36 17 Laser diode output main light direction secondary light direction light detection diode light emitting diode chip top cover 18, 28 123547.doc Conductive pin -11-