200934723 九、發明說明： - 【發明所屬之技術領域】 本發明係關於一種多自由度奈米壓電平台，係由數和^生 體、致動器組合而成，以供達到四自由度的運動及達到振動輔 助壓印技術與振動輔助脫模技術之設計。 【先前技術】 按，隨著半導體與微機電技術發展的日趨成熟，微機電技 〇 術已經進入90奈米以下之製程，目前半導體與微機電技術的製 造技術主要有光刻與蝕刻技術、乙1(3八技術與準UGA技術、微 細特種加工技術、軟蝕刻微加工技術、雷射微細加工技術以及 奈米壓印技術等，上述之各種製造技術可分為光學加工與機械 加工兩種。 目前半導體製程技術最常使用的是光學加工技術，光學加 工技術主要是以微影製程技術為主；由於光學加工技術的解析 φ 度受限於光學繞射極限，雖然降低光源波長是最直接的解決途 徑，然而這樣的變動會直接影響焦點深度，面臨光學機械設計 與材料研發等限制，步進工作平台的穩定性與基板之表面粗糖 度皆須要求更高精度，而且多數透鏡材料在波長縮短至紫外光 範圍後，因大幅吸收光源，在短波長範圍並不透光，除了有極 紫外光微影，波長為l3nm的光源之外，或是結合解析度增強技 術，此技術包含·相位移光罩、偏軸照射、光學鄰近修正及對 比增強層等’成功地將解析度改良至小於光源波長；解析度增 200934723 .51技術改善既有光學架構下的產品尺度，4實可以增加圖案轉 移的解析度，但是这類技術卻造成產能減少與產量縮減；而今 由於追求產品的輕薄短小，即將逼近光源波長的極限，必須採200934723 IX. DESCRIPTION OF THE INVENTION: - Technical Field of the Invention The present invention relates to a multi-degree-of-freedom nano-piezoelectric platform which is composed of a number of sum bodies and actuators for achieving four degrees of freedom. Movement and the design of vibration assisted imprinting technology and vibration assisted demoulding technology. [Prior Art] According to the development of semiconductor and MEMS technology, MEMS technology has entered the process of 90 nm or less. Currently, the manufacturing technology of semiconductor and MEMS technology mainly includes lithography and etching technology. 1 (3 8 technology and quasi-UGA technology, micro-special processing technology, soft etching micro-machining technology, laser micro-machining technology and nano-imprint technology, etc., the above various manufacturing technologies can be divided into optical processing and mechanical processing. At present, the most commonly used semiconductor process technology is optical processing technology. The optical processing technology is mainly based on lithography process technology; since the resolution of optical processing technology is limited by the optical diffraction limit, although reducing the wavelength of the light source is the most direct The solution, however, such changes will directly affect the depth of focus, facing the limitations of optomechanical design and material development, the stability of the stepping platform and the surface roughness of the substrate must require higher precision, and most lens materials are shortened in wavelength. After the ultraviolet light range, due to the large absorption of the light source, it does not transmit light in the short wavelength range. In addition to the ultra-violet lithography, the wavelength of l3nm light source, or combined with the resolution enhancement technology, this technology includes · phase shift mask, off-axis illumination, optical proximity correction and contrast enhancement layer, etc. Degree improved to less than the source wavelength; resolution increased by 200934723.51 technology to improve the product scale under the optical architecture, 4 can increase the resolution of pattern transfer, but this technology has caused capacity reduction and production reduction; now due to the pursuit of products Light and short, it is about to approach the limit of the wavelength of the light source, must be
、/、他更小波長的光束或能量束，例如離子束投射式微影、X 光微影、或是電子束投射式微影等製程，但由於製程上所需的 設備與技術要求更為精密與複雜，光束或能量束的設備與其周 邊系、充非名叩另，且製作速度慢，增加製程週期，不利業界量 ® I ’也導致高設備成本及高技術風險，在目前 ㈣製程技術，應用到實際的半導體製程產業，因=在為業主 界與學術界，均在奈米級製程中，尋求較低成本與低風險的新 製程技術。 在機械加工微機電製程技術方面，由於機械加工會產生切 屑的問題’以至於機械加工技術主要被應用在微米等級之加工 項域，但是自199qChou等人提出奈米壓印技術後機械加工 ® &術應用在奈米等級之加工已經被實現，奈米壓印技術與傳統 機械式沖壓床之原理相似，都是採用壓力將模仁上之圖形壓印 至基材（母材）上’不同處在於傳統沖壓床是圖形直接成形於基材 上，而奈米壓印技術是在基材上塗佈一層高分子材料，因此嚴 秸來β兒圖形是成形於高分子材料上並不會造成基材的損傷，又 因如此，奈米壓印技術亦有發展多層壓印之潛力，惟目前國内 半導體製程設備仍仰賴國外進口，國内極少公司研究開發機台 200934723 3免備，然而半導體製程線寬已到達瓶頸，傳統的顯影技術已不 符合需求，在各先進國家投入大量資源從事奈米科技的研究發 展之後、.、里濟成本與製程困難已成為奈米科技產&的應用瓶 頸，如何以較低的成本進行奈米產品的量產將是重要的議題； 奈米壓印技術具有單分子級的加工解析度、速度快、製程及設 備成本低等特色，可運用於電子、光電、生醫等產業，被譽為 十大可改變世界的科技之一。目前半導體製程技術最常使用的 〇 是光學加工技術，光學加工技術主要是以微影製程技術為主； 但是光學加工技術的解析度受限於光學繞射極限雖然降低光 源波長是最直接的解決途徑，然而這樣的變動會直接影響焦點 深度，面臨光學機械設計與材料研發等限制。奈米壓印技術其 圖案線寬解析度小於l〇nm，遠優於光學微影繞射極限，且製程 和設備成本較傳統微影技術低，於是成為奈米製造中重要的技 術之一。 〇 因此歸類奈米壓印技術其優勢為： 1. 設備成本低與操作成本低； 2. 生產彈性大； 3. 少數可輕易製作3D立體結構之微影蝕刻技術； 4. 高分子材料直接壓印成形，避免長時間或大範圍之蝕刻 步驟； 7 200934723 5·可簡單的製作出高深寬比的結構； 6·由技#與成本的考量，是未來最可能成功的奈来製作技 術.。 然而，上述論及奈米壓印技術，所採用之液壓式壓印頭是 /由壓驅動，该壓印碩與目前沖壓床所使用之沖堡方式相同，具 有同壓印壓力、壓印壓力平均、可吸收振動等特點，雖能突破 傳統顯影技術所不能達到之線寬，但奈米壓印技術尚有許多必 ® 需改善之處，茲整理如下： (1) 無法十分精準的定位重覆壓印。 (2) 無法達到大面積均勻壓印。 (3) 壓印深寬比不易控制。 (22)並無振動輔助奈米壓印或是輔助脫臈之研究。 (5)壓印力不易控制。 ❿ 、緣此’本案發明人㈣於上述採以奈米壓印技術仍有無法 解決的問題深入探討，乃亟思加以改良創新， 夕 上 '、工夕年古心孤 詣潛心研究後，終於成功研發完成一種由數撓性體、致動器組 合而成之多自由度奈米壓電平台，以期改善。 【發明内容】 本發明主要目的在於提供一種多自由度奈米壓電平台，採以 數撓性體、壓電式之致動器所架構而成，可诖 」運到四自由度的運 200934723 動’以及調整奈米壓印模仁之水平度，使壓印結構就有準確的高 深寬比’並湘致動ϋ高頻的振動，進行壓印過程中之輔助壓印 及輔助脫模的實用技術。 本發明為達上揭目的所設計之—種多自由度奈米壓電平 台，其架構係包含： . 一基座； 一覆設在該基座上方的上平台； ❹ 一覆設在基座與上平台之間的連接平台； 多數個設在基座上的致動器； 多數個設在連接平台上的致動器； 多數個可撓ϋ性體，每_第—撓性體之—端與連接平 口接合，且每-第-撓性體之另—端透過固定座，固定於基座 上；及 多數個具有二自由度可撓之第二撓性體，每一第二撓性體之 ❹輸出端與上平台連接，且每—第二撓性體之輸人端連接—致動器 之其一端。 據此，本發明所設計之一種多自由度奈米壓電平台，不僅有 效解決了上述採用油壓驅動之技術，I更具有如下諸項特點 丨.利用撓性體與壓電式之致動器所架構之壓電壓印頭，具 有五自由之運動，精確調整模仁之水平度，使壓印深寬更準確。 2·利用璧電式之致動器建立振動辅助壓印技術。 200934723 3 ·利用廢電式之致動器建立振動輔助脫模技術。 4.利用;1 f式之致動n進㈣印能準確控㈣印的深度。 【實施方式】 請參閱圖一之立體外觀示意圖以及圖二之立體分解示意 圖，本發明所提供之多自由度奈米壓電平台，主要包括有： 基座單兀，係由一基座（11 )、複數個撓性固定組以及二 不相鄰的對角線設置的微調致動組所構成，其提供平行方向的 〇 振動頻率；其中該撓性固定組係由狀座（12)、第-換性體⑽ 所構成，該帛一撓性體（13)之一端與連接平台接合，而另一端 透過固定座（12)固定於基座（H)上；其中該微調致動組係由第 —微調座（14)以及第一微調柱（15)以及致動器（16)所構成，該 第一微調座（14)係設置於基座（u)上，另一端設置有第一微調柱 (15)與致動器（16)，經由第一微調柱（15)之調整能使致動器（a) 之一端與連接平台（21)緊密貼合。 & 一連接平台單元，係與撓性固定組以及微調致動組連接， 亦由一連接平台（21)以及複數個撓性支撐組所構成其提供垂 直方向的振動頻率；其中該撓性支撐組係由第二撓性體（22)、 垂向致動器（23)、第二微調座（24)以及第二微調柱（25)所構成， 該第二撓性體（22)之輸出端（221)係與上平台（31)連接而輸入 ^(222)則與垂向致動器（23)連接，該垂向致動器（23)的另—端固 定在第二微調座（24)上，且第二微調座（24)固定在連接平台（21) 200934723 — 上，透過第二微調柱（25)之調整可經由垂向致動器（23)與第二撓 性體（22)緊密貼合於上平台（31)。該連接平台單元更於其中增設 有一致動器（41)，該致動器（41)能使用球窩接頭（42)與上平台（^) 相連接。 一上平台（31)，係與撓性支撐組連接，以產生多自由度且 不同模態的頻率運動。 另请參閱圖一至圖五所示，本發明所設計之一種多自由度 Φ 奈米壓電平台，其結構技術係包含： 一基座（11); 一覆設在該基座（11)上方的上平台（3丨）； 一覆設在基座（11)與上平台（31)之間的連接平台（21); 多數個設在基座（11)上的致動器（J 6); 多數個設在連接平台（21)上的垂向致動器（23)(41); 多數個可撓之第一撓性體（13)，每一第一撓性體（13)之一端 ® 與連接平台（21)接合，且每一第一撓性體⑴)之另一端透過固定 座（12)固定於基座（11)上；及 多數個具有二自由度可撓之第二撓性體（22)，每一第二撓性 祖之輪出端（222)與上平台（31)連接，且每一第二撓性體（22)之輸 入端（221)連接一垂向致動器（23)之其一端。 4參閱圖二所示，本發明一種較佳實施例中，該等致動器 (16)與垂向致動器（23)(41)能為壓電晶體、壓電致動器、壓電振 200934723 動產生器（piezoelectric vibration generat〇r)、壓電振盤器 (PieZ〇elecctric oscillator)、壓電陶兗調諧器 (Piezoelectric ceramic tuner) ’此該等致動器具有致動與產 生振動頻率的能力。 請參閱圖五所示，本發明一種較佳實施例中，該等第二拎 性體（22)，係由兩組互為垂直之第一撓性端（223)及第二撓性端 (224)(撓性端係為撓性體之一種）架構成，為—二自由度撓性 體’該等第二撓性體受垂向致動器（23)推動受力時，只有兩個自 由度之彈性變形。 參 請參閱圖-、圖二所示，本發明於實施時，由於各轴的運 動均由不同或部分相同的致動器⑽或垂向致動器(23)⑼所推 動’因此’該上平台（31)可達到四自由度的運動，由於跟致動器 ⑽設置於基座⑴）相對之兩邊且有—力偶關係當致動器⑽ 作動時’每—第—撓性體（12)產生彈性變形，使得連接平台（21) 又致動為（16)推動產生θζ逆時鐘方向的旋轉運動（如·對z轴旋 轉的㈣角）’上平台（31)是架構在連接平台（21)上，因而致動 器（16)作動時’上平台（31)θζ逆時鐘方向的旋轉運動； 當垂向致動器（23)作動時，且垂向致動器（23)同為推出或同 ，縮回時，上平台⑼朝ζ軸方向運動；當垂向致動器⑺)作動 時，垂向致動器（23)推出且垂向致動器（23)縮回，或垂向致動器 (23)推出且垂向致動器(23)縮回’第二撓性體⑼之第二撓性端 12 200934723 (224)產生彈性變形，上平台叫為θχ的旋轉運動(θχ :對χ轴 旋轉的旋轉角）； #垂向致動器（23)作動時，垂向致動器（23)推出且致動器 則)縮回’力垂向致動器（23)推出且垂向致動器⑼縮回，第二 撓性體⑽之第-撓性端⑽)產生彈性變形，上平台⑻為h 的旋轉運動（0y :對γ軸旋轉的旋轉角）； 當垂向致動器(23)(41)作動時，且垂向致動器_)均為 ®推出的兄’上平台（31)為2方向運動，致動器（41)使用球窩接 頭(42)與上平台（31)相連接1於壓印時之施力裝置，而垂向致 動益(23)在於上平台（川作z方向運動且進行壓印時保持上平 σ (31)之水平作動。 值得-題的是，本發明所設計之多自由度奈米壓電平台，藉 由上述結構之設計，可歸納本發明確實具有下列之優點·‘ 1. 本發明利料同壓電晶體致動器的搭配可達到不同轴的 〇 運動及各轴的同動，使平台的運用上更為靈活。 2. 本發明具有四自由度之微動機構，可大幅提高該平台之 實用性。 . 3. 本發明之致動器為Μ電晶體，可大幅提高微動機構之定 位精度’使壓印之深寬比更為準確 4. 本發明之致動器為壓電晶體，易於控制奈米壓印之壓印 施力，且可進行振動輔助壓印和振動輔助脫模，因此就 13 200934723 有良好之壓印微結構。 5.本發明利用二自由度撓性體架構之微動機構 、久 軸作動之干涉情形。 乂 口 經由上述，本發明所設計之多自由度奈米屬電平台，於上 列詳細說明係針對-可行實施例為具體之代表，惟該實施例並 非用以限制本發明之專利範圍，凡未脫離本發明之技藝精神所 為之等效實施或變更，均應包含於本發明所訴求專利之範圍令。 綜上所述，本發明所設計一種多自由度奈米壓電平台不 但在目前工業型態上確屬創新’具有可提昇平台之定位精度， 使壓印之深寬比更為準確，減少各轴作動之干涉情形，易^控 制奈米壓印之壓印施力......等_ ’其麵結構特徵，及技術應 鲁 用為完全創新，未見同類物品，為具創新且具有產業充分利用 的價值，實已符合發明專利之要件，爰依法提出申請，懇請貴 局核准本發明專利，讓本發明得以早日嘉惠廣大之社會大眾。 14 200934723 【圖式簡單說明】 圖一係本發明之立體外觀示意圖； 圖二係本發明之基本結構立體分解示意圖； 圖三係本發明之斷面組合示意圖； 圖四係本發明連接平台致動器之組合示意圖； 圖五係本發明基座致動器之組合示意圖； 圖六係本發明第二撓性體之外觀示意圖； 圖七係本發明致動器示意圖。 【主要元件符號說明】 11 基座 12 固定座 13 第一撓性體 14 第一微調座 15 第一微調柱 16 致動器 21 連接平台 22 第二撓性體 221 輸入端 222 輸出端 223 第一撓性端 224 第二撓性端 23 垂向致動器 24 第二微調座 25 第二微調柱 15 200934723 31 上平台 41 致動器 42 球窩接頭, /, his smaller wavelength beam or energy beam, such as ion beam projection lithography, X-ray lithography, or electron beam projection lithography, but because of the equipment and technical requirements required in the process is more precise Complex, beam or energy beam equipment and its surrounding system, notoriously different, and slow production speed, increase process cycle, unfavorable industry volume ® I ' also lead to high equipment cost and high technology risk, in the current (four) process technology, application To the actual semiconductor process industry, because of the owner and academic circles, in the nano-scale process, the pursuit of lower cost and low-risk new process technology. In the mechanical processing of micro-electromechanical process technology, the problem of chipping occurs due to machining. So that the machining technology is mainly applied in the micron-scale processing field, but since 199qChou et al. proposed the nano-imprint technology after machining + & The application of the nanometer grade has been realized. The nanoimprint technology is similar to the traditional mechanical stamping machine. It uses pressure to imprint the pattern on the mold to the substrate (base metal). The traditional stamping bed is a graphic directly formed on a substrate, and the nanoimprinting technique is to apply a layer of polymer material on the substrate, so that the β-baby pattern is formed on the polymer material and does not cause Damage to the substrate, and because of this, nanoimprint technology has the potential to develop multi-layer printing. However, domestic semiconductor process equipment still relies on foreign imports, and few domestic research and development machines 200934723 3 are free. The line width of the semiconductor process has reached the bottleneck, and the traditional development technology has not met the demand. It has invested a lot of resources in the research and development of nanotechnology in various advanced countries. The cost and process difficulties of Riji have become the bottleneck of nanotechnology production and application. How to mass production of nano products at a lower cost will be an important issue; nano imprint technology has a single molecular level It has the characteristics of processing resolution, fast speed, low process and low equipment cost, and can be used in electronics, optoelectronics, biomedical and other industries. It is regarded as one of the top ten technologies that can change the world. At present, the most commonly used semiconductor process technology is optical processing technology. Optical processing technology is mainly based on lithography process technology; however, the resolution of optical processing technology is limited by optical diffraction limit. Although reducing the wavelength of the light source is the most direct solution. Pathways, however, such changes will directly affect the depth of focus, facing limitations in optomechanical design and material development. Nano imprint technology has a linewidth resolution of less than l〇nm, which is far superior to the optical lithography diffraction limit, and the process and equipment cost is lower than that of traditional lithography, thus becoming one of the important technologies in nanofabrication. 〇The advantages of anodic imprinting technology are as follows: 1. Low equipment cost and low operating cost; 2. High production flexibility; 3. A few lithography techniques that can easily make 3D structures; 4. Direct polymer materials Embossing to avoid long-term or wide-area etching steps; 7 200934723 5·Simple production of high aspect ratio structures; 6·Technology # and cost considerations, is the most likely success in the future. . However, the above-mentioned discussion on the nanoimprint technology, the hydraulic imprint head used is / is driven by pressure, the imprinting master is the same as the punching method used in the current punching bed, and has the same imprinting pressure and imprinting pressure. The characteristics of average and absorbable vibration can break through the line width that cannot be achieved by traditional developing technology. However, there are many improvements in nano imprinting technology, which are summarized as follows: (1) Unable to accurately position the weight Overprinted. (2) Uniform imprinting of large areas cannot be achieved. (3) The impression aspect ratio is not easy to control. (22) There is no study of vibration assisted nanoimprinting or assisted dislocation. (5) Imprinting force is not easy to control. ❿ 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Successfully developed a multi-degree-of-freedom nano piezoelectric platform composed of a number of flexible bodies and actuators, with a view to improving. SUMMARY OF THE INVENTION The main object of the present invention is to provide a multi-degree-of-freedom nano-piezoelectric platform which is constructed by a plurality of flexible bodies and piezoelectric actuators, and can be transported to a four-degree-of-freedom operation 200934723 Move 'and adjust the level of nano-imprinted mold core, so that the embossed structure has an accurate high aspect ratio' and the high-frequency vibration of the 致 致, the auxiliary embossing and the auxiliary demoulding in the embossing process technology. The invention is a multi-degree-of-freedom nano piezoelectric platform designed for the purpose of the present invention, the architecture of which comprises: a pedestal; an upper platform overlying the pedestal; ❹ a cover on the pedestal a platform for connection to the upper platform; a plurality of actuators disposed on the base; a plurality of actuators disposed on the connecting platform; a plurality of flexible bodies, each of the _-flexible bodies - The end is joined to the connecting flat port, and the other end of each of the first flexible body is fixed to the base through the fixing base; and a plurality of second flexible bodies having two degrees of freedom and flexibility, each second flexible The output end of the body is connected to the upper platform, and the input end of each of the second flexible bodies is connected to one end of the actuator. Accordingly, the multi-degree-of-freedom nano-piezoelectric platform designed by the invention not only effectively solves the above-mentioned technology using hydraulic driving, but has the following characteristics: using the flexible body and the piezoelectric type The voltage-pressing head of the device has a five-free motion, which precisely adjusts the level of the mold and makes the embossing depth more accurate. 2. Establish vibration-assisted imprinting technology using a 璧-type actuator. 200934723 3 ·Using waste-type actuators to establish vibration-assisted demoulding technology. 4. Use; 1 f-type actuation n into (four) printing can accurately control (four) the depth of the printing. [Embodiment] Please refer to the schematic view of the stereoscopic appearance of FIG. 1 and the perspective exploded view of FIG. 2. The multi-degree-of-freedom nano piezoelectric platform provided by the present invention mainly includes: a base single cymbal, which is composed of a pedestal (11). And a plurality of flexible fixed groups and two non-adjacent diagonally arranged fine-tuning actuating groups, which provide a parallel vibration frequency of the chirp; wherein the flexible fixed group is a seat (12), a reversing body (10), one end of the first flexible body (13) is engaged with the connecting platform, and the other end is fixed to the base (H) through the fixing seat (12); wherein the fine adjustment actuating group is a first fine adjustment seat (14) and a first fine adjustment column (15) and an actuator (16), the first fine adjustment seat (14) is disposed on the base (u), and the other end is provided with a first fine adjustment The adjustment of the column (15) and the actuator (16) via the first fine adjustment column (15) enables one end of the actuator (a) to be in close contact with the connection platform (21). & a connecting platform unit connected to the flexible fixed group and the fine adjustment actuating group, and also composed of a connecting platform (21) and a plurality of flexible supporting groups for providing a vertical vibration frequency; wherein the flexible support The assembly is composed of a second flexible body (22), a vertical actuator (23), a second fine adjustment seat (24) and a second fine adjustment column (25), and the output of the second flexible body (22) The end (221) is connected to the upper platform (31) and the input ^ (222) is connected to the vertical actuator (23), and the other end of the vertical actuator (23) is fixed to the second fine adjustment seat ( 24), and the second fine adjustment seat (24) is fixed on the connection platform (21) 200934723 -, and the adjustment through the second fine adjustment column (25) can be performed via the vertical actuator (23) and the second flexible body ( 22) Closely attached to the upper platform (31). The connecting platform unit further has an actuator (41) added thereto, and the actuator (41) can be connected to the upper platform (^) using a ball joint (42). An upper platform (31) is coupled to the flexible support set to produce multiple degrees of freedom and different modes of frequency motion. Referring to FIG. 1 to FIG. 5, the multi-degree-of-freedom Φ nano piezoelectric platform designed by the present invention comprises: a pedestal (11); a cover over the pedestal (11) Upper platform (3丨); a connection platform (21) disposed between the base (11) and the upper platform (31); a plurality of actuators (J 6) disposed on the base (11) a plurality of vertical actuators (23) (41) disposed on the connecting platform (21); a plurality of flexible first flexible bodies (13), one end of each of the first flexible bodies (13) ® is coupled to the connection platform (21), and the other end of each of the first flexible bodies (1) is fixed to the base (11) through the fixing base (12); and a plurality of second flexible portions having two degrees of freedom and flexibility a body (22), each second flexible ancestor wheel end (222) is connected to the upper platform (31), and the input end (221) of each second flexible body (22) is connected to a vertical direction One end of the actuator (23). Referring to Figure 2, in a preferred embodiment of the present invention, the actuators (16) and the vertical actuators (23) (41) can be piezoelectric crystals, piezoelectric actuators, piezoelectrics. Vibration 200934723 Piezoelectric vibration generat〇r, PieZ〇elecctric oscillator, Piezoelectric ceramic tuner 'These actuators have actuation and vibration frequency ability. Referring to FIG. 5, in a preferred embodiment of the present invention, the second flexible body (22) is composed of two sets of mutually perpendicular first flexible ends (223) and a second flexible end ( 224) (the flexible end is a type of flexible body) frame structure, which is a two-degree-of-freedom flexible body. When the second flexible body is urged by the vertical actuator (23), only two The elastic deformation of the degree of freedom. Referring to Figures - and Figure 2, the present invention is implemented by the movement of each shaft by different or partially identical actuators (10) or vertical actuators (23) (9). The platform (31) can achieve four-degree-of-freedom movement, because the actuator (10) is disposed on opposite sides of the base (1) and has a force-couple relationship. When the actuator (10) is actuated, the 'per-first flexible body (12) Elastic deformation is generated such that the connecting platform (21) is actuated to (16) push to generate a rotational motion of the θ reverse clock direction (eg, (four) angle to the z-axis rotation). The upper platform (31) is constructed on the connection platform (21) ), thus, when the actuator (16) is actuated, the upper platform (31) θ is rotated in the counterclockwise direction; when the vertical actuator (23) is actuated, and the vertical actuator (23) is also pushed out Or, when retracted, the upper platform (9) moves in the direction of the x-axis; when the vertical actuator (7)) is actuated, the vertical actuator (23) pushes out and the vertical actuator (23) retracts, or hangs Pushing out toward the actuator (23) and retracting the vertical actuator (23) to the second flexible end 12 of the second flexible body (9) 200934723 (224) is elastically deformed, The upper platform is called the rotational motion of θχ (θχ: the rotation angle for the rotation of the χ axis); # When the vertical actuator (23) is actuated, the vertical actuator (23) is pushed out and the actuator is retracted' The force vertical actuator (23) is pushed out and the vertical actuator (9) is retracted, the first flexible end (10) of the second flexible body (10) is elastically deformed, and the upper platform (8) is a rotational motion of h (0y: pair The rotation angle of the γ-axis rotation); when the vertical actuator (23) (41) is actuated, and the vertical actuator _) is the brother launched by the ® 'upper platform (31) for 2-direction movement, actuation The device (41) is connected to the upper platform (31) by a ball joint (42) for the urging device at the time of imprinting, and the vertical actuation (23) is for the upper platform (the movement in the z direction and the pressing) At the time of printing, the level σ (31) is maintained. It is worthwhile to note that the multi-degree-of-freedom nano-piezo platform designed by the present invention can be summarized by the design of the above structure. 1. The combination of the invention and the piezoelectric crystal actuator can achieve the 〇 movement of different axes and the co-movement of each axis, so that the application of the platform is more flexible. 2. The invention has four The degree of freedom of the micro-motion mechanism can greatly improve the practicability of the platform. 3. The actuator of the present invention is a silicon-electric crystal, which can greatly improve the positioning accuracy of the micro-motion mechanism to make the aspect ratio of the imprint more accurate. The actuator of the present invention is a piezoelectric crystal, which is easy to control the imprinting force of the nanoimprint, and can perform vibration-assisted imprinting and vibration-assisted demolding, so that 13 200934723 has a good imprint microstructure. The invention utilizes the interference mechanism of the micro-motion mechanism and the long-axis actuation of the two-degree-of-freedom flexible body structure. Through the above, the multi-degree-of-freedom nanometer electric platform designed by the invention is detailed in the above description. The present invention is not intended to limit the scope of the invention, and the equivalents and modifications of the invention are intended to be included in the scope of the invention. In summary, the multi-degree-of-freedom nano-piezoelectric platform designed by the present invention is not only innovative in the current industrial type, but has the positioning accuracy of the platform, and the aspect ratio of the imprint is more accurate, reducing each The interference of the axis actuation, easy to control the imprinting force of nano imprinting......etc. _ 'The surface structure features, and the technology should be used for complete innovation, no similar items, innovative The value of having full use of the industry has already met the requirements of the invention patent. If you apply in accordance with the law, you are requested to approve the invention patent, so that the invention can be used to benefit the broad masses of the society at an early date. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic perspective view of the present invention; FIG. 2 is a perspective exploded view of the basic structure of the present invention; FIG. 3 is a schematic sectional view of the present invention; Figure 5 is a schematic view showing the combination of the susceptor actuator of the present invention; Figure 6 is a schematic view showing the appearance of the second flexible body of the present invention; and Figure 7 is a schematic view of the actuator of the present invention. [Main component symbol description] 11 pedestal 12 fixing seat 13 first flexible body 14 first fine adjustment seat 15 first fine adjustment column 16 actuator 21 connection platform 22 second flexible body 221 input end 222 output end 223 first Flexible end 224 second flexible end 23 vertical actuator 24 second fine adjustment seat 25 second fine adjustment column 15 200934723 31 upper platform 41 actuator 42 ball joint
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