TW200938286A - Method of recycling chemical - Google Patents

Abstract

In order to recycle a chemical, a chemical that is recovered from a predetermined chemical process and includes a foreign substance is reacted with a supercritical fluid to educe the foreign substance. Then, the educed foreign substance is separated from the chemical and the supercritical fluid. Thereafter, the supercritical fluid is separated from the chemical to recover the chemical. A foreign substance included in chemical used in a predetermined process may be easily removed and recycled, thereby reducing amount of a waste chemical to prevent environmental pollution, and reducing cost for disposing waste chemical.

Description

200938286 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for recovering a chemical substance, and more particularly to a method for recovering a chemical substance using a supercritical fluid. [Prior Art] Generally, a chemical substance produced through a predetermined chemical process contains impurities. ❿ For example, process chemicals used in components of semiconductor devices or flat panel display (FPD) devices include a liquid stripping liquid that removes the photoresist pattern, a thinner that removes unnecessary photoresist, and is used for various cleanings. Process cleaning solution, etc. Chemicals used in a given chemical process may include impurities such as residual photoresists and impurities contaminate the process chemistry and process defects occur upon reuse. Therefore, process chemicals including impurities are stopped before process defects occur, and process chemicals that are discontinued are discarded through various disposal procedures. Here, the disposal cost of the process chemistry is generated, and some problems such as environmental pollution occur. Certain cessation of use of chemicals can be collected, recovered and re-supplied using a separate recovery unit. However, the conventional use of a fractionation system as a recovery treatment device has a very high fractionation temperature, so that the chemical substance may be soluble and changed, and process defects may occur in the recycling process. Moreover, in the conventional fractionation system, the recovery treatment cannot be carried out in the process, so the recovery treatment must be carried out after the collection of the waste liquid via the separation & system 200938286

1 W5256FA. SUMMARY OF THE INVENTION The present invention obviates the above problems, and thus the present invention provides a chemical substance recovery method using a supercritical fluid. According to one aspect of the invention, in order to recover a chemical, a chemical recovered by a predetermined chemical process and including one of the impurities is reacted with a supercritical fluid to direct the impurity. The impurity that is directed is then separated from the chemical and the supercritical fluid. The supercritical fluid is then separated from the chemical to recover the chemical. The predetermined chemical process can include, for example, one of a process of a semiconductor device and a component process of a planar display device, and the impurity can include a photoresist. The chemical may include at least one of a stripping 1 iquid, a diluent, and a cleaning solution. The supercritical fluid may include at least one of carbon dioxide, ammonia, tolerant, ethidium, ethylene, butadiene, dimethyl ether, dichlorodifluorodecane, and nitrous oxide (nitrogen). After the supercritical fluid is separated from the chemical to recover the chemical, the chemical can be re-introduced into the chemical process. Further, the supercritical fluid separated from the chemical substance can be recovered and input to the step of guiding the impurity. In one embodiment, the impurities may be separated from the chemical by at least one of a method using a screen, a method using a filter, a method using a centrifugal separation, and a method using a chemical reaction. The reacting the chemical with the supercritical fluid to direct the impurity can include: controlling the amount of the supercritical fluid, the amount of the chemical, the reaction pressure of the supercritical fluid at 200938286 and the chemical, and the supercritical fluid At least one of the reaction temperatures with the chemical. The supercritical fluid system can control at least one of pressure and temperature to cause the supercritical fluid to expand and separate from the chemical. According to another aspect of the present invention, in order to recover a chemical substance, a first chemical substance recovered by a predetermined chemical process and including impurities is reacted with a supercritical fluid in a reaction chamber to guide the impurity into a separation chamber. The impurities directed into the separation chamber are then separated from the first chemical enthalpy to form a second chemical. The second chemical is separated from the supercritical fluid to recover the second chemical and the supercritical fluid. The recovered second chemical is reintroduced into the predetermined chemical process and the supercritical fluid is reintroduced into the reaction chamber. In one embodiment, directing the impurity into the separation chamber further comprises: inputting the first chemical substance into the reaction chamber; inputting the supercritical fluid to the reaction chamber to expand the first chemical substance to reduce the The solubility of the impurities; and directing the supersaturated impurities to the separation chamber. ® According to the method for recovering a chemical substance of the present invention, a supercritical fluid can be used to easily remove and recover impurities included in a chemical substance used in a predetermined chemical process, thereby reducing the amount of waste chemical substances to avoid environmental pollution, and reducing disposal of waste chemical substances. The cost. In addition, supercritical fluids having properties such as non-toxicity, non-flammability, and low supercritical point can be used to remove impurities without changing or damaging process chemicals, as compared to conventional methods such as fractionation. Then enter the chemical process. In order to make the above content of the present invention more obvious and easy to understand, the following is a special mention of 200938286

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following is a detailed description of the embodiments of the present invention. However, the invention may be embodied in a variety of different forms and should not be limited to the disclosed embodiments. The embodiments are used to disclose the technology of the present invention and the entire disclosure of the present invention is provided by those skilled in the art. In the drawings, the size and relative proportions of the coating and the area may be exaggerated due to the explicit depiction. “When a component or coating is described as being “on,” “connected to,” or “connected to” another component or coating, it may be directly on, connected or connected, or may be intervening. Or coating. Conversely, when the description of the elements is "directly on", "directly connected to" or "directly connected" to another component, there are no intervening elements or coatings. The same reference numerals indicate the elements of the phase. The term "and/or" includes any group of items listed. In the description, the terms ', 'second, third' and the like may be used to describe various elements, components, regions, coatings and/or sections, and such elements, components, regions, coatings and/or sections shall not be limited to this. The above terms are only used to distinguish between different components, components, regions, coatings and/or sections. Thus, the first element, component, region, coating, and/or section described below can be considered as a second element, component, region, singer and/or section without departing from the teachings of the present invention. θ spatially relative nouns, such as "below", "below", "above", "above", etc. L facilitates the description of elements or features and other components or special features in 200938286 After the relative, the + cover device is used in addition to the illustration or the second term is used. If the device in the figure is reversed, the above is in the second or =: "i" will become other Above or south of the component or feature." Therefore, the noun in the embodiment is "under it" 2 = the lower: the device can also be placed in other directions (rotating 9 degrees or other directions), so the spatial relative nouns need to be interpreted accordingly. The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to The word "comprising", used in this specification, indicates the presence of features, integers, steps, operations, components and/or accessories, but does not limit one or more other features, integers, steps, operations, components, parts and/or Or the existence or addition of a group. The embodiments of the present invention are shown in cross-section in schematic view of the preferred embodiments (and intermediate structures thereof) of the present invention. Thus, variations in the shape of the drawings, such as manufacturing techniques and/or tolerances, are contemplated. Therefore, the embodiment of the present invention is not intended to limit the particular shape of the region, but rather includes deformation of the shape at the time of manufacture. For example, the implanted region illustrated as a rectangle typically has rounded or curved corner features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to unimplanted regions. Similarly, the buried area formed by the implant may result in partial implantation of the area between the buried area and the surface of the implanted person. Therefore, the regions in the drawings are schematic and their shapes are not the actual shapes of the regions of the device, which are also intended to limit the scope of the invention. Unless otherwise defined, all terms (including technical and scientific terms) used herein are commonly understood by those skilled in the art of the present invention.

The same meaning of iv^/yj, ^WA. Unless explicitly defined, these nouns, as defined in the commonly used dictionary, should be interpreted as consistent with the meaning of the relevant art rather than interpreted as idealized or over-formalized. Fig. 1 is a flow chart showing a method of recovering a chemical substance according to an embodiment of the present invention. Fig. 2 is a block diagram showing an example of a chemical substance recovery apparatus according to the chemical substance recovery method of Fig. 1. As shown in Figs. 1 and 2, the chemical substance including impurities recovered from a predetermined chemical process can be recovered by removing impurities according to an embodiment of the present invention by the following method. According to an embodiment of the invention, a chemical recovery unit 100 for carrying out the method includes a chemical processing section 110, a reaction chamber 120, and a separation chamber 130. First, the first chemical substance CML1 is reacted with the supercritical fluid SF to guide the impurities (step S110). In the embodiment, as shown in Fig. 2, the first chemical substance CML1 and the supercritical fluid SF may mutually react in the reaction chamber 120. Impurities can be directed to the separation chamber 130. The first chemical CML1 is recovered by a predetermined chemical process and includes impurities produced by a chemical process. For example, the chemical process can include one of a process of a semiconductor device and a component process of a planar display device, and the impurity includes a photoresist. In particular, the chemical process may include various processes in the fabrication of semiconductor devices or components of planar display devices, such as processes for removing photoresist patterns, processes for eliminating photoresist, various cleaning processes, and the like. In an embodiment, the chemical used in the chemical process may include a liquid stripping liquid that removes the photoresist pattern, a thinner that removes unnecessary 200938286 a. vv x k photoresist, a cleaning liquid used in various cleaning processes, and the like. As described above, a chemical substance used in a predetermined chemical process may include an impurity such as a residual photoresist, and the impurity contaminates the chemical substance to cause a process defect upon reuse. Therefore, impurities may need to be removed to recover chemicals. Supercritical fluid SF refers to a substance whose temperature exceeds a critical temperature and whose pressure exceeds the -critical pressure. Since the fluid reaches a state above a given temperature and pressure, the secret cannot be distinguished as a liquid or a gas. The supercritical fluid SF is approximately liquid in the molecular degree, and β is similar to gas at low viscosity. The supercritical fluid SF has excellent thermal conductivity. The supercritical fluid SF described in the present invention may include not only a narrow supercritical fluid but also a generalized supercritical fluid. For example, carbon dioxide can be used as a supercritical fluid. Since carbon dioxide has a critical temperature of about 313⁄4 close to room temperature and a relatively low critical pressure of about 73 atmospheres, carbon dioxide can be easily supercritical fluidized. In addition, carbon dioxide is non-toxic, non-flammable, and low in price, making carbon dioxide stable, environmentally friendly, and economically efficient. The supercritical fluid SF is not limited to carbon dioxide, and various alternative materials can be used as the supercritical fluid SF. For example, ammonia, smoldering, sulphur, sulphur, sulphur, sulphur, sulphur, nitrous oxide, and nitrous oxide (laughing gas) can be used as supercritical fluid SF. And at least two of them can also be used as the supercritical fluid SF. The first chemical used in the established chemical process and including impurities, when reacted with the supercritical fluid SF, can lead to the impurity. For example, when the first chemical substance cMU including impurities reacts with the supercritical fluid SF, the first chemical substance CML1, which is a solvent, rapidly expands 200938286 sheets, and the solubility of the impurities as a solute is lowered. The amount of supersaturation leads to impurities. Fig. 3 is a flow chart showing an embodiment of guiding the impurity in Fig. 1. As shown in Fig. 3, the guiding of the impurities can be carried out in the following detailed steps. First, the first chemical substance CML1 is input to the reaction chamber 120 (step S112), and then the supercritical fluid SF is input to the reaction chamber 120 to expand the first chemical substance CML1 to reduce the solubility of the impurities (step S114). Then, the supersaturated impurities are guided to the separation chamber 120 (step S116). The impurity may be at least one of controlling the amount of the first chemical substance CML1, the amount of the supercritical fluid SF, the reaction pressure of the first chemical substance CML and the supercritical fluid SF, and the reaction temperature of the first chemical substance CML and the supercritical fluid SF. And guide. As shown in Figs. 1 and 2, the guided impurities are separated from the supercritical fluid SF from the first chemical substance CML1 (step S120). In the first chemical substance CML1 including impurities, the impurities are separated from the first chemical substance CML1 to form the second chemical substance CML2. For example, the impurities may be separated from the first chemical substance CML1 by at least one of a method using a sieve, a method using a filter, a method using a centrifugal separation, and a method using a chemical reaction. Then, the second chemical substance CML2 is separated from the supercritical fluid SF to recover the second chemical substance CML2 and the supercritical fluid SF (step S130). For example, the supercritical fluid SF can control at least one of pressure and temperature to cause the supercritical fluid to expand and separate from the chemical. In particular, 200938286 is 'since the supercritical fluid SF can be rapidly expanded by adding pressure or increasing temperature, and the supercritical frequency SF can control at least one or both of pressure and temperature to make the supercritical fluid SF Expanded to separate from the second chemical. For example, the pressure can be increased to from about 1 bar to about 300 bar. In an embodiment, as shown in Fig. 2, the second chemical CMU and the supercritical fluid SF may be separated using a control force control valve (10).

The second chemical chaos 2 and the supercritical fluid SF recovered via the above process can be freely recovered via a procedure different from the above process, respectively. For example, 'Second chemical (4) L2 and supercritical _ SF can be stored separately in separate storage, such as storage tank, thief second chemical CMU or supercritical Yan SF can be used in the process in. Further, the second chemical substance CML2 and the supercritical fluid SF recovered by the above process can be separately recovered as a process chemical substance and a supercritical fluid in the above chemical system. In an embodiment, as shown in FIGS. 1 and 2, the second chemical substance CML2 can be re-inputted into the chemical process section no (step si4〇), and the supercritical fluid SF can be re-inputted to The reaction chamber 12 is (step sl5). In particular, since the second chemical substance CML2 is in the state of removing impurities, the second chemical substance CML2 can be re-introduced into a predetermined chemical process. The second chemical CML2 can be immediately re-introduced to the chemical process section n〇 to form a continuous cycle. Further, since the supercritical fluid SF is separated from the second chemical substance CML2, the supercritical fluid SF can be re-introduced into the step of reacting with the first chemical substance CML1, i.e., the impurity is guided. Supercritical fluid SF is instant 11 200938286

l wyz^wA is then input to the reaction chamber 120 to form a continuous cycle. The experiment was carried out in accordance with the chemical substance recovered by the chemical substance recovery method of the embodiment of the present invention. Experimental Example 1: In this experimental example, the residual amount of impurities in the chemical substance recovered by the chemical substance recovery method according to the embodiment of the present invention was measured. The liquid absorbent, thinner and cleaning liquid used in semiconductor and flat panel display devices are used as the target chemical for recovery, and the solid photoresist system is used as an impurity. In order to obtain the waste liquid after use in the chemical process, 4% by weight of the solid photoresist is dissolved in the target chemical substance, that is, the liquid absorbent, the diluent and the cleaning liquid form a chemical substance including impurities. Various supercritical fluids react with the chemical and measure the amount of residual photoresist remaining in the liquid absorbent, diluent, and cleaning solution after being guided, filtered, and separated. The amount of residual photoresist is measured using an ultraviolet (UV) device. A widely used mixture of monoethanolamine (MEA) and diethanol monobutyl ether (BDG) is used as a liquid absorbent, and 4% by weight of a solid photoresist is added as an impurity to the mixture. The widely used propylene glycol oxime ether acetate (PGMEA) and propylene glycol methyl ether (PGME) are used as a diluent, and a solid weight resist having a weight percentage of 4% is added as a impurity in the mixture. A widely used water-based alkali cleaning solution is used as a cleaning liquid, and a solid-state photoresist having a weight percentage of 4% is added as a impurity in the mixture. Table 1 shows a method for recovering a chemical substance according to an embodiment of the present invention, at 12 200938286 泰 · WA Λ Λ. As a process chemical, a liquid absorbent, a diluent and a cleaning solution are reacted with various supercritical fluids to recover a liquid absorbent. After the thinner and cleaning solution, the amount of photoresist remaining in the process chemicals. Photoresist content after supercritical fluid recovery treatment (% by weight) Liquid absorbent thinner cleaning solution Experimental example Carbon dioxide 0.2 0.05 0.1 Ignition · 0.1 0.2 0.1 Ammonia 0.3 0.5 0.4 Methane 0.1 0.1 0.1 Ethylene 0.3 0.1 0.2 Ethylene 0.2 0.1 0.1 Butane 0.4 0.2 0.05 Table 1 See Table 1. For all supercritical fluids used in the experiment, the photoresist content after recovery was reduced from 4% by weight to less than 〇. 5%. Usually, when the photoresist content is less than 0.5% in the liquid absorbent, less than 0.1% in the diluent, and less than 〇. 5% in the cleaning solution, the probability of occurrence of defects is greatly reduced. Therefore, in most of the examples, the chemical substance can be confirmed by inputting it to the process immediately after the φ treatment. Experimental Example 2: The chemical substance recovered by the chemical substance recovery method according to the embodiment of the present invention was reintroduced into the process' and the performance of the recovered chemical substance was measured. In this experimental example, the chemical substance obtained in Experimental Example 1 was used in Experimental Example 2. First, the performance of the liquid absorbent for the recovery of the test was performed, and the positive photoresist (DTFR-3650B manufactured by DONGJIN SEMICHEM, Korea) 13 200938286 .

The TW5256PA was applied to a three-inch wafer at 2,500 rpm and heat-treated at 100 ° C for 90 seconds on a hot plate. The thickness of the cover layer was measured by a nanometer to be 1 5 "m 'and exposed The developed germanium wafer was heat-treated at i5〇〇c for 1 minute to obtain a photoresist film layer. When the temperature of the liquid absorbent was maintained, the Shihwa wafer was immersed in the liquid absorbent before the recovery treatment and the liquid absorbent obtained in Experimental Example 1, and the time of completion of the absorption was measured. In addition, the performance of the diluent for the test recovery was carried out using an 8-inch diameter oxidized ground substrate. First, the cerium oxide substrate was immersed in a mixture including cerium peroxide and sulfuric acid for 5 minutes for cleaning, and washed with ultrapure water. Then, the yttrium oxide substrate was spin-dried using a spin dryer (SRD 1800-6 manufactured by VERTEq) and the photoresist was coated at a uniform thickness on the surface of the oxidized dream substrate. A spin coater (EBR TRACK manufactured by Korea Semiconductor Systems Co., Ltd.) was used for the coating photoresist. In order to control the spin coating machine, the photoresist of i〇cc (DTFR-3650B manufactured by DONGJIN SEMICHEM, Korea) was dropped on the middle of the base of the stop, and the light was scattered at 500 rpm for 3 seconds using a spin coater. Resistance. Then, the ruthenium oxide substrate was accelerated at a rotation speed of about 2,000 to 4,000 rpm to adjust the photoresist to a predetermined thickness. The photoresist was removed (edge rim ball removal, EBR) using the diluent before the recovery treatment and the diluent obtained in Experimental Example 1, and the performance was measured separately. Table 2 shows the measured chromium chromatographic performance of the diluent. Plant 1, r, y\J 1 1 Speed (rpm) Time (seconds) __Distribution condition 500 3 __Rotary coating Control EBR conditions according to photoresist thickness _ 500 7 Table 2 In addition, 'cleaning solution for test recovery To remove the performance, use the glass substrate of the liquid crystal display 200938286. Typically, the goal of using cleaning fluids is to remove fingerprints, dust, and residual waste liquids that may be generated during the process. Therefore, after the glass substrate of the liquid crystal display is contaminated with fingerprints, dust, liquid absorbent, etc., the glass substrate is immersed in the cleaning liquid before the recovery treatment and the cleaning liquid obtained in the experimental example 1 for 5 minutes, and the removal amount of the contaminant is used. An optical measuring instrument (FTM-200 manufactured by LEICA) was measured to confirm the removal performance of the target. Table 3 shows the test results of the above experiment.液态 The liquid absorbent shows the measurement time for the removal, the diluent shows the degree of penetration of the photoresist interface, and the cleaning fluid shows the removal of contaminants. Here, "PR" means photoresist. In the diluent, the symbol "◎" indicates that the photoresist has no interface penetration after the EBR, and the symbol "X" indicates that the interface penetrates more than 20% and causes film tailing at the edge portion. In the cleaning solution, the symbol "◎" indicates that the contaminant is completely removed, and the symbol "X" indicates that the contaminant removal is less than 20°/〇.

15 200938286

Performance of TW5256FA before and after recycling ------- Liquid absorbent thinner cleaning solution Supercritical fluid reference comparison example Experimental example Reference example Experimental example Reference example Experimental example PRO% Recycling before treatment PR 4% Recycling PRO % PR4% before recycling treatment PR 0% after recycling treatment PR4% before recovery treatment 1 Carbon dioxide 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 2 Carbon monoxide 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 3 Ammonia 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 4 methane 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 5 ethane 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 6 ethylene 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ 7 Butane 20 seconds 60 seconds 20 seconds ◎ X ◎ ◎ X ◎ Table 3 See Table 3, all supercritical fluids used in this test are in liquid state due to 4% residual photoresist before recycling Absorbents, diluents, and cleaning solutions showed poorer performance than the reference values, but showed results that met the reference values in the liquid bear absorbent, diluent, and cleaning solution after the recovery treatment. The attachments 1 to 3 show the test photographs according to the experimental example of the present invention. The chemical substances after the recovery of the pre- and post-transfer procedures 1 show the use of dioxide dioxide as supercritical fine, and (4) Guangxue = test results. Attachment 2 shows the body of the body, and the cleaning liquid is used as the light chemical: the critical test flow of the quality 200938286

Λ vv X V Please refer to Accessories 1 to 3. It can be easily confirmed by the appearance. In the liquid absorbent, thinner and cleaning solution, the impurities existing before the recycling of the left cup are greatly reduced in the right cup after the recycling treatment. As described above, according to the chemical substance recovery method of the present invention, the supercritical fluid can be used to easily remove and recover impurities included in the chemical substances used in a predetermined chemical process, thereby reducing the amount of waste chemical substances to avoid environmental pollution, and reducing the treatment. The cost of waste chemicals. In addition, supercritical fluids having characteristics such as flawless toxicity, non-flammability, and low supercritical point can be used to remove impurities without changing or damaging the process chemicals, as compared with conventional methods such as fractionation. Instantly enter the chemical process. In summary, although the invention has been disclosed above by way of example, it is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention is defined by the scope of the appended patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of recovering a chemical substance according to an embodiment of the present invention. Fig. 2 is a block diagram showing an example of a chemical substance recovery apparatus according to the chemical substance recovery method of Fig. 1. Figure 3 is a flow chart showing an embodiment of guiding the impurity in Figure 1 17 200938286

TW5256PA diagram. [Main component symbol description] 100 Chemical recovery unit 110 Chemical process section 120 Reaction chamber 130 Separation chamber 140 Pressure control valve

Claims (1)

200938286 JL T » ^ Vf A. X A. VII. Patent application scope: 1. A method for recovering chemical substances, comprising: reacting a chemical substance recovered by a predetermined chemical process and including one impurity with a supercritical fluid to guide the impurity; The impurity that is directed is separated from the chemical and the supercritical fluid; and the supercritical fluid is separated from the chemical to recover the chemical. Φ 2. The chemical substance recovery method of claim 1, wherein the predetermined chemical process comprises one of a process of a semiconductor device and a component process of the planar display device, and the impurity comprises a photoresist. 3. The chemical substance recovery method according to claim 2, wherein the chemical substance comprises at least one of a liquid absorbent (stripping 1 i qu i d), a diluent, and a cleaning liquid. 4. The chemical substance recovery method according to claim 1, wherein after the supercritical fluid is separated from the chemical substance to recover the chemical substance, the method further comprises: re-inputting the chemical substance into the chemical Process. 5. The method of recovering a chemical substance according to claim 1, further comprising: recovering the supercritical fluid separated from the chemical substance; and re-introducing the supercritical fluid to guide the impurity. 6. The method of recovering a chemical substance according to claim 1, wherein the supercritical fluid comprises carbon dioxide, ammonia, decane, ethane, ethylene, butane, dimethyl ether, dichlorodifluorodecane, and At least one of nitrous oxide (laugh 19 200938286 1 W5256FA gas). 7. The method for recovering a chemical substance according to claim 1, wherein the impurity is obtained from at least one of a method using a sieve, a method using a filter, a method using a centrifugal separation, and a method using a chemical reaction. The chemical is separated. 8. The method for recovering a chemical substance according to claim 1, wherein the reacting the chemical substance with the supercritical fluid to guide the impurity further comprises: controlling the amount of the supercritical fluid, the amount of the chemical substance, the At least one of a reaction pressure of the supercritical fluid and the chemical, and a reaction temperature of the supercritical fluid and the chemical. 9. The chemical recovery method of claim 1, wherein the supercritical fluid system separates the chemical from the chemical by at least one of controlling pressure and temperature to expand the supercritical fluid. 10. A method of recovering a chemical substance, comprising: reacting a first chemical substance recovered by a predetermined chemical process and including impurities with a supercritical fluid in a reaction chamber to guide the impurity into a separation chamber; guiding to the separation chamber The impurity is separated from the first chemical to form a second chemical; the second chemical is separated from the supercritical fluid to recover the second chemical and the supercritical fluid; and the second chemical to be recovered The substance is reintroduced into the established chemical process and the supercritical fluid is reintroduced into the reaction chamber. 11. The method for recovering a chemical substance according to claim 10, wherein the introducing the impurity into the separation chamber further comprises: 200938286 Λ ψ J ^ »-* Λ Λ 1 inputting the first chemical substance to the reaction a chamber; the supercritical fluid is input to the reaction chamber to expand the first chemical to reduce solubility of the impurity; and the supersaturated impurity is directed to the separation chamber. twenty one