TW200940705A - Copper CMP polishing pad cleaning composition comprising of amidoxime compounds - Google Patents

Copper CMP polishing pad cleaning composition comprising of amidoxime compounds Download PDF

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Publication number
TW200940705A
TW200940705A TW097141618A TW97141618A TW200940705A TW 200940705 A TW200940705 A TW 200940705A TW 097141618 A TW097141618 A TW 097141618A TW 97141618 A TW97141618 A TW 97141618A TW 200940705 A TW200940705 A TW 200940705A
Authority
TW
Taiwan
Prior art keywords
polishing pad
cleaning composition
cmp polishing
copper cmp
pad cleaning
Prior art date
Application number
TW097141618A
Other languages
English (en)
Inventor
Wai Mun Lee
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Publication of TW200940705A publication Critical patent/TW200940705A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/50—Cleaning by methods involving the use of tools involving cleaning of the cleaning members
    • B08B1/52—Cleaning by methods involving the use of tools involving cleaning of the cleaning members using fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097141618A 2007-10-29 2008-10-29 Copper CMP polishing pad cleaning composition comprising of amidoxime compounds TW200940705A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72707P 2007-10-29 2007-10-29
US622707P 2007-12-31 2007-12-31

Publications (1)

Publication Number Publication Date
TW200940705A true TW200940705A (en) 2009-10-01

Family

ID=40257334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141618A TW200940705A (en) 2007-10-29 2008-10-29 Copper CMP polishing pad cleaning composition comprising of amidoxime compounds

Country Status (3)

Country Link
US (1) US20090137191A1 (zh)
TW (1) TW200940705A (zh)
WO (1) WO2009058272A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110088881A (zh) * 2016-12-14 2019-08-02 嘉柏微电子材料股份公司 自化学机械平坦化基板移除残留物的组合物及方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211844B2 (en) * 2005-10-21 2012-07-03 Freescale Semiconductor, Inc. Method for cleaning a semiconductor structure and chemistry thereof
US8802608B2 (en) * 2007-07-26 2014-08-12 Mitsubishi Gas Chemical Comany, Inc. Composition for cleaning and rust prevention and process for producing semiconductor element or display element
TWI443191B (zh) * 2007-08-08 2014-07-01 Arakawa Chem Ind Lead-free solder flux removal detergent composition and lead-free solder flux removal method
WO2009058278A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
EP2207872B1 (en) * 2007-10-29 2013-07-03 Ekc Technology, Inc. Novel nitrile and amidoxime compounds and methods of preparation
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
US8802609B2 (en) 2007-10-29 2014-08-12 Ekc Technology Inc Nitrile and amidoxime compounds and methods of preparation for semiconductor processing
TWI460557B (zh) * 2008-03-07 2014-11-11 和光純藥工業股份有限公司 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
US7825079B2 (en) * 2008-05-12 2010-11-02 Ekc Technology, Inc. Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture
US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
US7838483B2 (en) * 2008-10-29 2010-11-23 Ekc Technology, Inc. Process of purification of amidoxime containing cleaning solutions and their use
US20100105595A1 (en) * 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds
JP2010226089A (ja) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc 半導体ウェハをクリーニングする方法
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US7947130B2 (en) 2009-10-24 2011-05-24 Wai Mun Lee Troika acid semiconductor cleaning compositions and methods of use
KR101801413B1 (ko) * 2009-12-23 2017-12-20 램 리써치 코포레이션 퇴적 후 웨이퍼 세정 포뮬레이션
KR101829399B1 (ko) * 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
CN101908503A (zh) * 2010-07-21 2010-12-08 河北工业大学 超大规模集成电路多层铜布线化学机械抛光后的洁净方法
CN102554783B (zh) * 2010-12-23 2014-12-03 中芯国际集成电路制造(上海)有限公司 研磨垫清洗方法
KR101532990B1 (ko) * 2011-09-22 2015-07-01 도요 고무 고교 가부시키가이샤 연마 패드
US9138861B2 (en) * 2012-02-15 2015-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. CMP pad cleaning apparatus
US8647445B1 (en) * 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US9058976B2 (en) * 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
JP6110814B2 (ja) * 2013-06-04 2017-04-05 富士フイルム株式会社 エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法
JP6065802B2 (ja) * 2013-10-03 2017-01-25 信越半導体株式会社 研磨布の洗浄方法及びウェーハの研磨方法
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
CN107210214A (zh) * 2015-03-30 2017-09-26 Jsr株式会社 化学机械研磨用处理组合物、化学机械研磨方法及清洗方法
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
IL283786B2 (en) * 2018-12-12 2025-08-01 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
CN110479213A (zh) * 2019-08-29 2019-11-22 西南科技大学 偕胺肟基修饰mof材料及其制备方法
CN117693564A (zh) * 2021-04-26 2024-03-12 化学动力公司 垫表面再生和金属收取
WO2023096862A1 (en) * 2021-11-23 2023-06-01 Entegris, Inc. Microelectronic device cleaning composition
JP2025525108A (ja) * 2022-08-02 2025-08-01 アプライド マテリアルズ インコーポレイテッド Ｃｍｐ温度制御システムの洗浄
CN115870867A (zh) * 2022-12-26 2023-03-31 西安奕斯伟材料科技有限公司 抛光装置及抛光方法
US12521840B2 (en) * 2024-03-07 2026-01-13 Wolfspeed, Inc. Two component chemical mechanical polishing

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480391A (en) * 1967-08-24 1969-11-25 Sinclair Research Inc Hydroxylamine solutions stabilized with an amide oxime and method for their preparation
US3544270A (en) * 1968-08-13 1970-12-01 Sinclair Oil Corp Aqueous hydroxylamine solutions stabilized with hydroxyurea or hydroxythiourea derivatives
US3882018A (en) * 1970-12-04 1975-05-06 Aerojet General Co Process for recovery of minerals from acidic streams
US3794488A (en) * 1972-06-14 1974-02-26 Eastman Kodak Co Photosensitive and thermosensitive element,composition and process
DE3343600A1 (de) * 1983-12-02 1985-06-13 Basf Ag, 6700 Ludwigshafen Stabilisierte loesungen von hydroxylamin oder dessen salze
DE3345733A1 (de) * 1983-12-17 1985-06-27 Basf Ag, 6700 Ludwigshafen Stabilisierte loesungen von hydroxylamin oder dessen salze in wasser oder alkoholen sowie deren herstellung
DE3345734A1 (de) * 1983-12-17 1985-06-27 Basf Ag, 6700 Ludwigshafen Stabilisierte loesungen von hydroxylamin oder dessen salze in wasser oder alkoholen sowie deren herstellung
DE3347260A1 (de) * 1983-12-28 1985-07-11 Basf Ag, 6700 Ludwigshafen Stabilisierte loesungen von hydroxylamin oder dessen salze in wasser oder alkoholen sowie deren herstellung
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5808150A (en) * 1997-08-14 1998-09-15 Concept Sciences, Inc. Stabilization of hydroxylamine solutions
US6352595B1 (en) * 1999-05-28 2002-03-05 Lam Research Corporation Method and system for cleaning a chemical mechanical polishing pad
DE19936594A1 (de) * 1999-08-04 2001-02-08 Basf Ag Verfahren zur Herstellung von hochreinen stabilisierten Hydroxylaminlösungen
JP2001267273A (ja) * 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd 金属用研磨材、研磨組成物及び研磨方法
US7220322B1 (en) * 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
JP4945857B2 (ja) * 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
CN1207773C (zh) * 2001-12-27 2005-06-22 松下电器产业株式会社 布线结构的形成方法
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US20030235989A1 (en) * 2002-06-25 2003-12-25 Seagate Technology Llc Process for CMP assisted liftoff
CA2503573C (en) * 2002-11-01 2012-07-03 E. I. Du Pont De Nemours And Company Copper complexes and their use as wood preservatives
JP4644120B2 (ja) * 2003-03-18 2011-03-02 野村マイクロ・サイエンス株式会社 半導体研磨スラリー精製用素材、半導体研磨スラリー精製用モジュールおよび半導体研磨スラリーの精製方法
DE602004000946T2 (de) * 2003-04-28 2007-01-04 Shin-Etsu Chemical Co., Ltd. Dimethylpolysiloxan -Zusammensetzung
JP2004330056A (ja) * 2003-05-07 2004-11-25 Ebara Corp 電子素子基板表面処理液用フィルターカートリッジ
KR20070001955A (ko) * 2004-01-26 2007-01-04 티비더블유 인더스트리즈, 인코포레이티드 화학적 연마를 위한 다단계 패드 처리 시스템 및 방법
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
US20090107520A1 (en) * 2007-10-29 2009-04-30 Wai Mun Lee Amidoxime compounds as chelating agents in semiconductor processes
WO2009058275A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc. Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions
EP2207872B1 (en) * 2007-10-29 2013-07-03 Ekc Technology, Inc. Novel nitrile and amidoxime compounds and methods of preparation
WO2009058278A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110088881A (zh) * 2016-12-14 2019-08-02 嘉柏微电子材料股份公司 自化学机械平坦化基板移除残留物的组合物及方法
CN110088881B (zh) * 2016-12-14 2023-09-26 Cmc材料股份有限公司 自化学机械平坦化基板移除残留物的组合物及方法

Also Published As

Publication number Publication date
US20090137191A1 (en) 2009-05-28
WO2009058272A1 (en) 2009-05-07

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