TW200943447A - Wafer testing apparatus and processing equipment having the same - Google Patents

Wafer testing apparatus and processing equipment having the same

Info

Publication number
TW200943447A
TW200943447A TW097119396A TW97119396A TW200943447A TW 200943447 A TW200943447 A TW 200943447A TW 097119396 A TW097119396 A TW 097119396A TW 97119396 A TW97119396 A TW 97119396A TW 200943447 A TW200943447 A TW 200943447A
Authority
TW
Taiwan
Prior art keywords
wafer
testing apparatus
processing equipment
crack
wafer testing
Prior art date
Application number
TW097119396A
Other languages
Chinese (zh)
Other versions
TWI388021B (en
Inventor
Soon-Jong Lee
Bong-Joo Woo
Original Assignee
Semisysco Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisysco Co Ltd filed Critical Semisysco Co Ltd
Publication of TW200943447A publication Critical patent/TW200943447A/en
Application granted granted Critical
Publication of TWI388021B publication Critical patent/TWI388021B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

The present invention provides a wafer testing apparatus. The wafer testing apparatus includes a wafer transferring part which transfers a wafer along a transfer path, and is placed near an edge of the wafer to be transferred, inspects whether a crack or a particle exists in the edge of the wafer, and distinguishes between the crack and the particle. There is provided an inspector for taking out the wafer to another transfer path if there exists the crack or the particle. Further, the present invention provides processing equipment having the wafer testing apparatus, which can inspect qualities of a wafer to be introduced into a series of processes and determine whether to introduce or take out the wafer into or from a processing chamber or the next series of processes according to results from inspecting the qualities.
TW097119396A 2008-04-08 2008-05-26 Wafer test device and processing device having the same TWI388021B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20080032868 2008-04-08

Publications (2)

Publication Number Publication Date
TW200943447A true TW200943447A (en) 2009-10-16
TWI388021B TWI388021B (en) 2013-03-01

Family

ID=41162024

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097119396A TWI388021B (en) 2008-04-08 2008-05-26 Wafer test device and processing device having the same

Country Status (4)

Country Link
KR (1) KR101060712B1 (en)
CN (1) CN101990706A (en)
TW (1) TWI388021B (en)
WO (1) WO2009125896A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009050711A1 (en) * 2009-10-26 2011-05-05 Schott Ag Method and device for detecting cracks in semiconductor substrates
KR102044788B1 (en) * 2012-10-30 2019-11-18 삼성디스플레이 주식회사 Inspection Apparatus for Glass substrate
KR101514031B1 (en) * 2014-04-28 2015-04-22 이성수 Shield Box
WO2015168282A1 (en) * 2014-04-29 2015-11-05 Pleotint, L.L.C. Absorbing solar control interlayers
CN103972126A (en) * 2014-05-21 2014-08-06 上海华力微电子有限公司 Method for preventing silicon wafers from being broken
WO2016162406A1 (en) * 2015-04-07 2016-10-13 Albert-Ludwigs-Universität Freiburg Device for detecting electronic defects in the edge region of silicon-based semiconductors
KR101990639B1 (en) * 2017-11-08 2019-06-18 주식회사 테스 Substrate inspection method and Substrate processing apparatus
CA3124335A1 (en) * 2019-02-28 2020-09-03 Yoshino Gypsum Co., Ltd. Apparatus for inspecting plate-like bodies
KR102742003B1 (en) * 2022-03-11 2024-12-17 세메스 주식회사 Inspection apparatus and substrate processing apparatus
US20250305935A1 (en) * 2024-03-26 2025-10-02 Tokyo Electron Limited Bonding energy measurement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020046829A (en) * 2000-12-15 2002-06-21 윤종용 Apparatus for inspecting wafer
KR100445457B1 (en) * 2002-02-25 2004-08-21 삼성전자주식회사 Apparatus and method for inspecting wafer backside
KR100596048B1 (en) * 2002-07-08 2006-07-03 삼성코닝정밀유리 주식회사 System for inspecting edge of glass substrate
JP4298238B2 (en) * 2002-08-27 2009-07-15 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing system
US7366344B2 (en) 2003-07-14 2008-04-29 Rudolph Technologies, Inc. Edge normal process
US7968859B2 (en) 2003-07-28 2011-06-28 Lsi Corporation Wafer edge defect inspection using captured image analysis

Also Published As

Publication number Publication date
CN101990706A (en) 2011-03-23
KR101060712B1 (en) 2011-08-30
WO2009125896A1 (en) 2009-10-15
TWI388021B (en) 2013-03-01
KR20090107400A (en) 2009-10-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees