200950573 ' 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種加熱器（heater)，用以將離子注入 裝置、離子摻雜裝置、電聚浸沒（piasma Immersi〇n)裝置、 曝光裝置及在姓刻或形成薄膜所使用之電E處理裝置等、 .半導體製造裝置中之半導體晶圓或玻璃基板予以升溫者。 【先前技術】 +導體製造裝置雖有各種形態，惟有需要進行所謂的 €>溫度管理，用以將所處理之半導體晶圓或玻璃等基板升溫 至某-定溫度，且於處理中保持在一定溫度，之後降溫至 常溫左右者。此係由於被處理物與電漿或離子、或其他反 應物質之化學性或物理性反應之速度等會因溫度而有不同 之故。-般而言，若溫度上升則會促進化學性、物理性反 應。 一般而言，升溫之手段係於由具有電阻之金屬所構成 ❹電極令々IL通電流，且藉由其焦耳熱而使電極發熱，而將 該熱傳遞至被處理物之手段。此係由於溫度之控制、發敎 之啟^刀斷相對較容易進行之故。由於晶圓等之處理大都 在真工中進仃，因此一般係藉由與冷媒循環之冷卻系統併 來縮紐被處理物之降溫時間。此係因為若在被處理物與 "承載邛有真空之間隙，則不會有由於對流或導熱所產生 夕…、之移動而會只成為輪射，因此在自然冷卻下需要許 夕時間來降溫，而使裝置之產出量（throughput)降低之故。 被處理物之溫度管理雖依半導體製程而有不同，惟有 320248 5 200950573 •時在其全部區域需要設在±1°C以内。在最尖端之製程中， 由於矽製晶圓之直徑有大型化到300mm之傾向，因此極難 以使該晶圓整體以均一溫度上升。其主要原因之一係為承 載晶圓之部位並非完全平坦，通常會產生數十左右的 製造上之凹凸，因此僅以導熱方式無法良好地管理溫度之 故。在使用電聚之 CVD(Chemical Vapour Deposition，化 » 學氣相沉積）裝置等中，大多係使用以陶瓷來製作加熱器之 絕緣部，俾能承受在高溫下之使用、升溫與冷卻之熱衝擊 〇 者，惟係將包含加熱器之承載部之熱容量加大。此係由於 欲以加熱器將承載部整體加熱，且藉由來自該處之輻射而 使被處理物之溫度上升均一化之故。 在曰本特開2004-179058號公報中揭示有一種以片狀 加熱器使用於調理器具或地毯（carpet)者。發熱體係以不 鏽鋼等具有較強拉伸強度之金屬薄膜形成。在日本特開 2003-21 7800號公報中揭示有一種可在半導體製程中使用 且可加熱到350°C高溫之加熱器。在日本特開平8-180962 〇 號公報中揭示有一種將金屬製之發熱體與被覆該發熱體之 絕緣層予以堅固地緊密黏著而使導熱良好之加熱器。在曰 本特開昭63-72085號公報中揭示有一種在以合金為主體 之發熱體之表面被覆鋁者。在日本特開2002-8984號公報 中則揭示有一種以氮化鋁為絕緣體，且於絕緣體内部具有 發熱體之半導體製程用之陶瓷加熱器。 專利文獻1:日本特開2004-1 79058號公報 專利文獻2:日本特開2003-217800號公報 6 320248 200950573 曰本特開平8-180962號公報 曰本特開昭63-72085號公報 曰本特開2002-8984號公報 專利文獻3 專利文獻4 專利文獻5 【發明内容] [發明欲解決之問題] , 本發明欲解決之課題如下。 Ο 々第1課題係為將來自加熱器之熱有效率地傳遞至晶圓 ί之，處理物。亦即’將加熱器與被處理物之接觸面積提 ^虽内含發熱體之絕緣體為陶究時，由於陶曼表面較硬 理有微細之凹凸’因此具有幾乎無法期待與被處 f緣體為樹料，由於樹脂較耗具柔軟性，雖某程t 二處理物之面，惟無法避免形成發熱體之電極層之 厚度程度會顯現於絕緣體之表面而成為 ❹ 的部分不會與被處理物接觸，幾乎不會產生熱^動= 無法期待被處理物之均勻升溫。 第2課題係為以低成本製造加熱器 不使用陶瓷等离俨夕以^丨 七緣材枓 器之承恭都I 材抖、及將保持被處理物且包含加熱 將π緣f之谷龍量減小。由於絕緣體為陶究時，難以 將、、，巴緣體溥化，因此交并合 ' 於承載部之六籍合 使其材料費變責。由 邛之令積愈小則熱容量亦愈小，因此 加熱器周邊組徠x知热體寺 1出士欠 （ ent)之電源規格亦可減輕，而可將 亦屬相同^形再者’關於承載部之冷卻系統之規格方面， 320248 7 200950573 申請專利範圍第1項之發明係一種片狀加熱器，係以 樹脂為絕緣體且具有由鋁金屬所構成之發熱體者，其特徵 為：樹脂表面之凹凸係為i 以下。此係由於只要樹脂 之表面凹凸為以下，則可期待藉由樹脂之柔軟性與被 處理物之面接觸之比例會充分變大之故。 . 申請專利範圍第2項之發明係為如申請專利範圍第工 項之片狀加熱器’其中，發熱體之材質係為鋁金屬’其體 積電阻率係為2.7xir至3.5χ10-Ω · cm之範圍。以鋁金 ©屬形成發熱體之理由係由於在薄膜之發熱體中，需以良好 再現性形成該發熱體之體積電阻率之故。此外，通常之鋁 之塊體（bulk)之體積電阻率在常溫下雖為27χι〇_6ω · απ’惟由於作為發熱體時細較高者才能在流通相同電流 時增加發熱量，因此較為有利。在申請專利範圍第2項之 發明中係藉由蒸鍵法形成，藉此而可獲得較塊體之情形更 南之體積電阻率。發熱體設在整面時亦可圖案化為適當之 ❹形狀。進订圖案化時，亦可在全面形成膜之後進行姓刻， 或先作遮罩後再僅將必要之部分製膜亦可。 申請專利範圍第3項之發明係為如申請專利範圍第i 項之片狀加熱器，其中’鋁金屬之發熱體之厚度係為 以:。在形成薄膜式發熱體時，其形成方法極為重要。藉 由，鐘法進行，即可以良好再現性形成^㈣至_之 極溥鋁金屬膜。藉由將發熱體之厚度作成l"m以下，即相 對較容易將被覆發熱體之電性絕緣之樹腊層所出現之凹凸 成Am以下。以其他形成紹金屬膜之手段而言，係有離 320248 8 200950573 子鍵膜（ion plating)法或鍍覆法。 申明專利範圍第4項之發明係為如申請專利範圍第j 項之片狀加熱器，其中，在銘金屬之發熱體之至少其一面 側具有樹脂之阻氣（gas barrier)層。在以鋁金屬為發熱體 時，會有因為該熱與周圍料之氧或水蒸氣而使發熱體進 ,打氧化之情形，故藉由極力抑制氧或水蒸氣不致從片狀加 熱器之表面等到達發熱體，可獲得增長其壽命之結果。在 通常之聚醯亞胺（P0lyimide)中，例如其氧穿透率於氣溫 © 25 C 濕度 50%時雖為 i〇〇cc · m-2 · 24 小時-i · 〇. 左右，惟以進一步提高阻氣性之材質而言，係可使用芳族 聚醯胺（aramid)。此材質相較於聚醯亞胺有氧穿透率低2 位數左右者，例如T0RAY(日本東麗股份有限公司）公司之 ΜI CRON (T0RAY公司之註冊商標）係為低大約3位數之 0. 2cc· m · 24 小時、atm_1· 0. 1随-丨。除此之外 TEIJIN(日 本帝人股份有限公司）之ARAMIKA(TEIJIN公司之註冊商標） ❹亦屬適當。以其他較佳之樹脂而言，係有例如聚偏二氣乙 烯（Poly vinyl idene chloride，PVDC)、乙烯乙烯醇共聚 物（Ethylene vinylalchol cop〇lymer)、聚丙烯腈 (polyacrylonitrile, PAN)、樹脂族聚醯胺（p〇lyamide)、 聚對苯一甲酸乙二酯（p〇lyethylene、聚 苯硫謎（Polyphenylene Sulfide)、聚氯乙稀（polyvinyl chloride、PVC)等。阻氣層之厚度係為1〇/^至1〇〇/zm 左右之範圍，其係經考慮氣體之進入率、使用溫度而決定。 申请專利範圍第5項之發明係為如申請專利範圍第j 9 320248 200950573 •項之片狀加熱器，其中，在銘金屬之發㈣之至少其1 側設f金屬之熱分散層。來自發熱體之熱需均—地傳遞至 加=态表面。發熱體之形體非為在加熱器整面而是具有圖 术N·在力”’、器表面之正下方係可形成無發熱體之部分。 此時’從發熱體傳遞熱至加熱器表面之方式雖可能產生不 均，惟藉由設置至少一層熱分散層在發熱體與加教器之表 面層之間，可將熱的傳遞方式予以均一化。以熱分散層而 言’係為金屬之5至30㈣之層，以材質而言，係以導熱 ©率較高之鋁或銅為較佳。 申請專利㈣第6項之發明係為如申請專利範圍第i 項之片狀加熱器，其中，由紹金屬所構成之發熱體之承載 側之樹脂之絕緣體之厚度係為5〇至1〇〇//m。由於發熱體 之厚度最大為lem，因此被覆該發熱體之電性絕緣體之厚 度若未作成較發熱體之厚度更厚，則無法吸收因發熱體之 厚度所產生之凹凸。樹脂之絕緣體之厚度若為發熱體之厚 ❹度之50至100倍，則即使有因發熱體之厚度所生之凹凸， 絕緣體表面之凹凸亦可抑制於1//Π1以下。若絕緣體之厚度 為50 # m以下，則絕緣體表面之凹凸則為i # m以上，若為 1 〇〇 // m以上則從發熱體到承載被處理物之面之熱電阻就 變得過大，因此會產生升溫時間變長之缺點。 申請專利範圍第7項之發明係為如申請專利範圍第1 項之片狀加熱器’其中’使用於發熱體之電性絕緣之樹脂 係為由選自聚醯亞胺（p〇lyimide)、芳族聚醯胺（aramid)、 聚醯胺、聚對苯二甲酸乙二酯（polyethylene 320248 10 200950573 • terephthalate)、聚醚醯亞胺（polyetherimide)、聚蔡二 甲酸乙二酯（Polyethylene naphtha late)、聚笨硫謎 (Polyphenylene Sulfide)、聚醚砜（P〇lyether Sulfone)、 聚甲基戊烯（Polymethyl pentene)之一種以上材質所構 成。聚醯亞胺、芳族聚Si胺、聚醢胺、聚對笨二甲酸乙二 酯、聚醚醯亞胺、聚萘二曱酸乙二酯、聚笨硫醚、聚醚砜、 t曱基戊細係分別具有充分之電性絕緣特性，於2 〇 〇。〇左 右南/凰亦可使用。尤其聚聽亞胺、芳族聚醢胺具有承受化 〇學腐蝕性之優異性，因此為較佳之材料。 藉由此發明，由於被覆發熱體之樹脂絕緣層之表面之 凹凸係可達l//m以下，因此可將熱從發熱體有效地傳遞至 被處理物，而使被處理物整體可在短時間内以均一之溫度 升溫。此外，鋁之發熱體係藉由阻氣層而阻礙氧或水蒸氣 從周圍進入，因此可抑制其氧化而使壽命增長。再者，藉 由在加熱益内部設置金屬之熱分散層，即使加熱器電極為 ❹圖案狀且於加熱器表面正下方不具有加熱器電極時，亦可 維持加熱器表面溫度之均一性。 【實施方式】 以下參照圖式說明本發明之最佳形態。 (實施例1) 茲根據第1圖說明本發明之第丨實施例。 在第1圖中，第1樹脂層3與第2樹脂層6主要係开 $阻氣層。第1樹脂層3與第2樹脂層6均係使用阻氣性 異之芳族聚醯胺（T0RAY公司之MICR〇N(T〇RAY公司之今 320248 11 200950573 .. 〇 冊商標））。準備直徑為298mm厚度為5〇心之第i樹脂芦 3與第2樹脂層6。在第2樹脂層6使用遮罩將紹藉由基鍍 法鍍膜成如第1圖所示之圖案為之厚度，而作成發熱 體5。接著使發熱體5位於内側而在第2樹脂層6與第工 樹脂層3夹設第2黏著層4,且進一步在第i樹脂層3盘 ‘底板1之間夾設第1黏著層2，以處理溫度為i5(re、“ 為2Mpa同時黏著於铭製之絲！，而完成第】實施例之片 狀加熱器50。底板1之厚度為1〇酿且直徑為298麵。第上 =著層2與第2黏著層4均為厚度之熱可塑性聚醒 ^胺。在發熱體5雖係連接直流或交流的電源，惟係藉由 在發熱體之兩端連接導線（未圖示）來進行。 (實施例2) 繼根據第2圖說明本發明之第2實施例。 在第2圖中，第2樹脂層6主要係形成阻氣層。第3 。月曰層1與第4樹脂層8係使用相對較柔軟之聚酿亞胺樹 〇 =此係為了藉由在第3樹脂層7與第4樹脂層8使用柔 S之㈣而極力減小表面之凹凸之故。第2樹脂層6係使 」氣|±優異之芳族聚醯胺（T〇RAY公司之mICR〇n(t〇ray =之^冊商標））。先準備與直徑為咖咖厚度為心^ 外I,3樹&層7相同直徑且相同厚度之第4樹脂層8。另 Μ 4 直^為298随而厚度為25#m之第2樹脂層6。 用、疮，月曰層8之厚度係為5〇“ m ’而在該第4樹脂層8使 之^_將鋁藉由崧鍍法鍍膜成如第2圖所示之圖案為丨#111 而作成發熱體5。接著使發熱體5位於内側而在 320248 12 200950573 第4樹脂層8與第3樹脂層7夾設第2黏著層4,且於第4 樹脂層8之反面搭上第2樹脂層6，並進一步在第3樹月t 層7與底板1之間夹設第1黏著層2，以處理溫度為15 〇 °C、壓力為2Mpa同時黏著於鋁製之底板1，而完成第2實 施例之片狀加熱器51。底板1之厚度為1〇mu}且直徑為 ,298mm。第1黏著層2與第2黏著層4均為20# m之厚度之 熱可塑性聚醯亞胺。在發熱體5雖係連接直流或交流的電 源，惟係藉由在發熱體之兩端連接導線（未圖示）來進行。 〇 (實施例3) 繼根據第3圖說明本發明之第3實施例。 在第3圖中’第2樹脂層6主要係形成阻氣層。在本 實施例之片狀加熱器中復具有熱分散層1〇。第3樹脂層7 與第4樹脂層8係使用相對較柔軟之聚醯亞胺樹脂。此係 為了與第2實施例相同之理由之故。第2樹脂層6係使用 阻氣性優異之芳族聚醯胺（T0RAY公司之MICR〇N(T〇RAY公 ❹司之註冊商標））。先準備直徑為298mm厚度為50 之第 3樹脂層7與第4樹脂層8。並使用在第4樹脂層8之單面 預先施有25y m厚度之銅箔。另外再準備直徑為298mm而 厚度為25“ m之第2樹脂層6。第4樹脂層8之厚度係為 50 # m’而在該第4樹脂層8之單面使用遮罩藉由蒸鍍法將 鋁鍍膜成如第3圖所示之厚度為1/zm之圖案，而作成發熱 體5又藉由將第4樹脂層8反面之銅箔藉由以同心圓狀 方式僅將周圍部分蝕刻去除而作成熱分散層10。接著，使 發熱體5位於内側而在第4樹脂層8與第3樹脂層7夾設 13 320248 200950573 第2黏著層4,且於第4樹脂層8之反面搭上第2樹脂層6, 並進一步在第3樹脂層7與底板1之間夾設第1黏著層2, 以處理溫度為15(TC、壓力為2Mpa同時黏著於鋁製之底板 1 ’而完成第3實施例之片狀加熱器53。底板1之厚度為 10mm且直徑為298mm。第1黏著層2與第2黏著層4均為 ,別以1»厚度之熱可塑性聚醯亞胺，而第3黏著層9係為 30/zm厚度之熱可塑性聚醯亞胺。在發熱體$雖係連接直 流或交流的電源，惟係藉由在發熱體之兩端連接導線（未圖 〇示）來進行。 【圖式簡單說明】 第1圖係顯示本發明片狀加熱器之第1實施例，第1 圖（a)係為平面之概略圖，而第丨圖（1))係為剖面之概略構 成圖。 第2圖係顯示本發明片狀加熱器之第2實施例，第2 圖（a)係為平面之概略圖，第2圖（1})係為剖面之概略構成 圖。 〇 第3圖係顯示本發明片狀加熱器之第3實施例，第3 圖（a)係為平面之概略圖，第3圖（b)係為剖面之概略構成 圖。 【主要元件符號說明】 底板 第1樹脂層 發熱體 第3樹脂層 第1黏著層 第2黏著層 第2樹脂層 第4樹脂層 320248 200950573 熱分散層 9 第3黏著層 10 50 第1實施例之片狀加熱器 51 第2實施例之片狀加熱器 52 第3實施例之片狀加熱器200950573 ' IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a heater for ion implantation apparatus, ion doping apparatus, electro-concentration immersion (piasma Immersi〇n) apparatus, exposure The device and the electric E-processing device used for forming a thin film or the like, and the semiconductor wafer or the glass substrate in the semiconductor manufacturing device are heated. [Prior Art] The conductor manufacturing apparatus has various forms, and it is only necessary to perform so-called temperature management to raise the substrate such as the processed semiconductor wafer or glass to a certain temperature and maintain it during processing. A certain temperature, then cool down to normal temperature or so. This is because the chemical or physical reaction speed of the material to be treated with plasma or ions or other reaction materials may vary depending on the temperature. In general, if the temperature rises, it will promote chemical and physical reactions. In general, the means for raising the temperature is a means in which a crucible electrode composed of a metal having a resistance causes a current to flow through the crucible, and the electrode is heated by the Joule heat to transfer the heat to the object to be treated. This is because the control of the temperature and the opening and closing of the hair are relatively easy. Since the processing of wafers and the like is mostly carried out in the real work, the cooling time of the processed object is generally reduced by the cooling system with the refrigerant circulation. This is because if there is a vacuum gap between the object to be treated and the carrier, there will be no radiance or heat conduction, and it will only become a shot. Therefore, it takes a long time to cool under natural cooling. Cooling down, and reducing the throughput of the device. Although the temperature management of the processed material varies depending on the semiconductor process, only 320248 5 200950573 • It is required to be within ±1 °C in all areas. In the most advanced process, since the diameter of the wafer is increased to 300 mm, it is extremely difficult to increase the overall temperature of the wafer at a uniform temperature. One of the main reasons is that the portion where the wafer is loaded is not completely flat, and usually has about tens of manufacturing irregularities. Therefore, the temperature cannot be well managed by heat conduction alone. In the CVD (Chemical Vapour Deposition) device using electropolymerization, the insulating portion of the heater is mostly made of ceramics, and the thermal shock of use, temperature rise and cooling at high temperatures can be withstood. The latter, however, increases the heat capacity of the load-bearing portion containing the heater. This is because the entire portion of the load-bearing portion is heated by the heater, and the temperature rise of the object to be treated is uniformed by the radiation from the place. A sheet heater is used for a conditioning apparatus or a carpet, as disclosed in Japanese Laid-Open Patent Publication No. 2004-179058. The heat generating system is formed of a metal film having a strong tensile strength such as stainless steel. A heater which can be used in a semiconductor process and which can be heated to a high temperature of 350 ° C is disclosed in Japanese Laid-Open Patent Publication No. 2003-21 7800. Japanese Laid-Open Patent Publication No. Hei 8-180962-A No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Publication No. 63-72085 discloses a method in which a surface of a heating element mainly composed of an alloy is coated with aluminum. Japanese Laid-Open Patent Publication No. 2002-8984 discloses a ceramic heater for a semiconductor process having an aluminum nitride as an insulator and a heat generating body inside the insulator. Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-1 79058. Patent Document 2: JP-A-2003-217800, No. JP-A No. Hei. No. Hei. No. Hei. JP-A-2002-8984 Patent Document 3 Patent Document 4 Patent Document 5 [Draft] The problem to be solved by the present invention is as follows. 々 々 The first problem is to efficiently transfer heat from the heater to the wafer. That is to say, 'the contact area between the heater and the object to be treated is improved. Although the insulator containing the heating element is ceramic, since the surface of the Tauman has a fine surface and has fine irregularities, it has almost no expectation and a position. For the tree material, since the resin is more flexible, although the surface of the two treatments is not affected, the thickness of the electrode layer forming the heating element cannot be prevented from appearing on the surface of the insulator and the portion which becomes the 不会 will not be treated. When the object is in contact, almost no heat is generated. = The uniform temperature rise of the object to be treated cannot be expected. The second problem is to manufacture a heater at a low cost without using ceramics, such as 陶瓷 以 以 丨 缘 缘 缘 缘 都 都 都 都 都 都 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The amount is reduced. Since the insulator is made of ceramics, it is difficult to degenerate the bar and the body of the bar. Therefore, the six-in-one combination of the bearing unit is responsible for the material cost. The smaller the heat capacity is, the smaller the heat capacity is. Therefore, the power supply specifications of the heaters around the heaters can be reduced, and the power specifications of the heaters can be reduced. The specification of the cooling system of the bearing portion is 320248 7 200950573. The invention of claim 1 is a sheet heater which is a resin which is made of a resin and has a heating element composed of aluminum metal, and is characterized by a resin surface. The unevenness is i or less. When the surface unevenness of the resin is not less than this, it is expected that the ratio of the flexibility of the resin to the surface of the object to be treated is sufficiently increased. The invention of claim 2 is a sheet heater as in the application of the patent scope, wherein the material of the heating element is aluminum metal, and its volume resistivity is 2.7xir to 3.5χ10-Ω·cm. The scope. The reason why the aluminum alloy is used to form the heating element is that the volume resistivity of the heating element needs to be formed with good reproducibility in the heating element of the film. In addition, the volume resistivity of a bulk of aluminum is usually 27 χι〇_6 ω · απ' at room temperature, but it is advantageous to increase the amount of heat when the same current is flown because it is higher as a heating element. . In the invention of the second application of the patent application, it is formed by a steam bonding method, whereby a volume resistivity more than that of a bulk can be obtained. The heating element can also be patterned into a suitable ❹ shape when it is placed over the entire surface. When the pattern is formed, the film may be formed after the film is completely formed, or the mask may be formed first, and then only the necessary portion may be formed. The invention of claim 3 is a sheet heater as claimed in claim i, wherein the thickness of the 'aluminum metal heating element is: When forming a film type heating element, the method of forming it is extremely important. By means of the clock method, it is possible to form a very fine aluminum metal film of ^(4) to _ with good reproducibility. By setting the thickness of the heating element to be less than or equal to m, it is relatively easy to make the unevenness of the wax layer which is electrically insulated from the heating element to be equal to or less than Am. In other means of forming a metal film, there is an ion plating method or a plating method from 320248 8 200950573. The invention of claim 4 is the sheet heater of claim j, wherein at least one side of the heating element of the metal has a gas barrier layer of a resin. When aluminum metal is used as the heating element, the heat is generated due to the heat and the oxygen or water vapor of the surrounding material, so that the oxygen or water vapor is not suppressed from the surface of the sheet heater. When the heat is reached, the result of increasing its life can be obtained. In the usual polyimine (P0lyimide), for example, the oxygen permeability is i〇〇cc · m-2 · 24 hours-i · 〇. about the temperature of 25 ° C humidity 50%, but further For the material for improving gas barrier properties, an aromatic aramid can be used. This material is about 2 digits lower than the aerobic permeability of polyimine. For example, T CRAY (Japan Toray Co., Ltd.) ΜI CRON (registered trademark of T0RAY Co., Ltd.) is about 3 digits lower. 0. 2cc· m · 24 hours, atm_1· 0. 1 with -丨. In addition, ARAMIKA (registered trademark of TEIJIN) of TEIJIN (Japanese Teijin Co., Ltd.) is also appropriate. Other preferred resins are, for example, poly vinyl idene chloride (PVDC), ethylene vinyl alcoholic cop〇lymer, polyacrylonitrile (PAN), and resin polycondensation. P〇lyamide, polyethylene terephthalate (polyphenylene sulfonate, polyvinyl chloride, PVC), etc. The thickness of the gas barrier layer is 1 The range from 〇/^ to 1〇〇/zm is determined by considering the gas entry rate and the use temperature. The invention of claim 5 is the patent application scope j 9 320248 200950573 • a heater, wherein a heat dispersing layer of f metal is provided on at least one side of the hair of the metal (4). The heat from the heating element is uniformly transmitted to the surface of the plus state. The shape of the heating element is not in the heater The whole surface has a picture N. In the force "', the part directly under the surface of the device can form a part without a heating element. At this time, the way of transferring heat from the heating element to the surface of the heater may be uneven, but By setting at least one layer of heat The layer is between the heating element and the surface layer of the teaching device, and the heat transfer mode can be uniformized. In the case of the heat dispersion layer, the layer is 5 to 30 (four) of the metal, and the material is thermally conductive. The aluminum or copper having a higher rate is preferred. The invention of claim 6 is the sheet heater of the item i of the patent application, wherein the resin on the bearing side of the heating element composed of the metal The thickness of the insulator is 5 〇 to 1 〇〇 / / m. Since the thickness of the heating element is at most lem, the thickness of the electrical insulator covering the heating element cannot be absorbed if it is not thicker than the thickness of the heating element. The unevenness of the thickness of the heating element. If the thickness of the insulator of the resin is 50 to 100 times the thickness of the heating element, the unevenness of the surface of the insulator can be suppressed even if there is unevenness due to the thickness of the heating element. //Π1 or less. If the thickness of the insulator is 50 #m or less, the unevenness of the surface of the insulator is i #m or more, and if it is 1 〇〇//m or more, the thermal resistance from the heating element to the surface carrying the object to be processed It becomes too large, so it will produce warming time The invention of claim 7 is the sheet heater of the first aspect of the patent application, wherein the resin used for electrically insulating the heating element is selected from the group consisting of polyimine (p) 〇lyimide), aromatic aramid, polyamine, polyethylene terephthalate (polyethylene 320248 10 200950573 • terephthalate), polyetherimide, polyethylene diethylene glycol dicarboxylate (Polyethylene naphtha late), polyphenylene Sulfide, polyethersulfone (P〇lyether Sulfone), polymethylpentene (Polymethyl pentene) one or more materials. Polyimine, aromatic polySiamine, polyamine, polyethylene terephthalate, polyether phthalimide, polyethylene naphthalate, polyphenylene sulfide, polyether sulfone, t曱The ketone series have sufficient electrical insulating properties, respectively, at 2 〇〇. 〇 Left and right south/phoenix can also be used. In particular, polyimine and aromatic polyamines are preferred materials because they have excellent elixir repellency. According to the invention, since the unevenness of the surface of the resin insulating layer covering the heating element can be up to 1/m or less, heat can be efficiently transmitted from the heating element to the object to be processed, and the object to be processed can be made short. Warm up at a uniform temperature during the time. Further, the aluminum heat-generating system hinders the entry of oxygen or water vapor from the surroundings by the gas barrier layer, so that oxidation thereof can be suppressed and the life can be increased. Further, by providing a heat dispersing layer of metal inside the heating benefit, even if the heater electrode has a ❹ pattern and does not have a heater electrode directly under the heater surface, the uniformity of the heater surface temperature can be maintained. [Embodiment] Hereinafter, the best mode of the present invention will be described with reference to the drawings. (Embodiment 1) A third embodiment of the present invention will be described based on Fig. 1. In Fig. 1, the first resin layer 3 and the second resin layer 6 are mainly provided with a gas barrier layer. Both the first resin layer 3 and the second resin layer 6 are made of a gas barrier property, an aromatic polyamine (MICR〇N of T0RAY Co., Ltd., 320248 11 200950573 . . . ). The ith resin reed 3 and the second resin layer 6 having a diameter of 298 mm and a thickness of 5 Å were prepared. The second resin layer 6 is formed into a heat generating body 5 by using a mask to form a thickness as shown in Fig. 1 by a base plating method. Next, the heating element 5 is placed inside, and the second adhesive layer 4 is interposed between the second resin layer 6 and the second resin layer 3, and the first adhesive layer 2 is further interposed between the first resin layer 3 and the bottom plate 1 of the disk. The sheet heater 50 of the embodiment is treated at a temperature of i5 (re, "2Mpa at the same time adhered to the silk of the name!". The thickness of the bottom plate 1 is 1 brewed and the diameter is 298. The layer 2 and the second adhesive layer 4 are both thermoplastic thermoplastics of a thickness. The heating element 5 is connected to a DC or AC power source, but is connected to the ends of the heating element (not shown). (Second Embodiment) A second embodiment of the present invention will be described with reference to Fig. 2. In Fig. 2, a second gas barrier layer is formed mainly by the second resin layer 6. The third layer is the fourth layer and the fourth layer. The resin layer 8 is made of a relatively soft polyaniline bark = this is to reduce the unevenness of the surface by using the softness S in the third resin layer 7 and the fourth resin layer 8. The resin layer 6 is an aromatic polyamine which is excellent in gas|± (mICR〇n of the company T〇RAY), and the thickness is the thickness of the coffee and coffee. , 3 The layer & layer 7 has the same diameter and the same thickness of the fourth resin layer 8. The other layer 4 is 298 and then has a thickness of 25#m of the second resin layer 6. With the sore, the thickness of the layer 8 is 5 〇 "m ', and the fourth resin layer 8 is formed by coating the aluminum into a heating element 5 by a ruthenium plating method as shown in Fig. 2, and then the heating element 5 is placed. The second adhesive layer 4 is interposed between the fourth resin layer 8 and the third resin layer 7 on the inner side, and the second resin layer 6 is placed on the reverse side of the fourth resin layer 8, and further in the third tree month t The first adhesive layer 2 is interposed between the layer 7 and the bottom plate 1, and is adhered to the aluminum base plate 1 at a treatment temperature of 15 〇 ° C and a pressure of 2 MPa, and the sheet heater 51 of the second embodiment is completed. The thickness of 1 is 1 〇mu} and the diameter is 298 mm. The first adhesive layer 2 and the second adhesive layer 4 are thermoplastic polyimides having a thickness of 20 # m. The heating element 5 is connected to a direct current or an alternating current. The power supply is carried out by connecting wires (not shown) at both ends of the heating element. 实施 (Embodiment 3) A third embodiment of the present invention will be described with reference to Fig. 3. In Fig. 3 2 resin layer 6 A gas barrier layer is formed. In the sheet heater of the present embodiment, a heat dispersion layer 1 is further provided. The third resin layer 7 and the fourth resin layer 8 are made of a relatively soft polyimide resin. For the second resin layer 6, an aromatic polyamine (TCRRAY's MICR〇N (registered trademark of T〇RAY) is used for the second resin layer 6). A third resin layer 7 having a diameter of 298 mm and a thickness of 50 were prepared, and a fourth resin layer 8 was used. A copper foil having a thickness of 25 μm was applied to one surface of the fourth resin layer 8 in advance. Further, a second resin layer 6 having a diameter of 298 mm and a thickness of 25 μm was prepared. The thickness of the fourth resin layer 8 was 50 #m', and a mask was used on one surface of the fourth resin layer 8 by evaporation. The aluminum coating is formed into a pattern having a thickness of 1/zm as shown in FIG. 3, and the heating element 5 is formed by etching the copper foil on the reverse side of the fourth resin layer 8 by concentrically etching only the surrounding portion. The heat-dissipating layer 10 is removed, and the heat generating body 5 is placed inside, and the second adhesive layer 4 is placed between the fourth resin layer 8 and the third resin layer 7 and the second adhesive layer 4 is placed on the reverse side of the fourth resin layer 8. The second resin layer 6 is further placed, and the first adhesive layer 2 is further interposed between the third resin layer 7 and the bottom plate 1 to be processed at a temperature of 15 (TC, a pressure of 2 MPa, and adhesion to the bottom plate 1 made of aluminum). The sheet heater 53 of the third embodiment. The bottom plate 1 has a thickness of 10 mm and a diameter of 298 mm. Both the first adhesive layer 2 and the second adhesive layer 4 are made of a thermoplastic resin polyimine of 1» thickness. The third adhesive layer 9 is a thermoplastic polyimine having a thickness of 30/zm. Although the heating element is connected to a DC or AC power source, it is provided by two heating elements. The first embodiment shows a first embodiment of the sheet heater of the present invention, and the first diagram (a) is a schematic view of the plane, and the first embodiment is shown in the drawings. Fig. 1 is a schematic view showing a cross section. Fig. 2 is a view showing a second embodiment of the sheet heater of the present invention, and Fig. 2(a) is a plan view of a plane, Fig. 2 (1) Fig. 3 is a view showing a third embodiment of the sheet heater of the present invention, and Fig. 3(a) is a plan view of a plane, and Fig. 3(b) is a cross section. Fig. [Description of main component symbols] Base plate first resin layer heating element Third resin layer First adhesive layer Second adhesive layer Second resin layer Fourth resin layer 320248 200950573 Heat dispersion layer 9 Third adhesive layer 10 50 1st sheet heater 51 of the second embodiment, the sheet heater of the second embodiment, the sheet heater of the third embodiment
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