TW201001728A - Nanocrystalline photovoltaic device - Google Patents
Nanocrystalline photovoltaic device Download PDFInfo
- Publication number
- TW201001728A TW201001728A TW098108571A TW98108571A TW201001728A TW 201001728 A TW201001728 A TW 201001728A TW 098108571 A TW098108571 A TW 098108571A TW 98108571 A TW98108571 A TW 98108571A TW 201001728 A TW201001728 A TW 201001728A
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- Prior art keywords
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- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 130
- 239000007789 gas Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 230000008569 process Effects 0.000 claims abstract description 79
- 239000001257 hydrogen Substances 0.000 claims abstract description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 32
- 238000009501 film coating Methods 0.000 claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 claims abstract description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 172
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 78
- 238000000576 coating method Methods 0.000 claims description 77
- 239000011248 coating agent Substances 0.000 claims description 69
- 239000011521 glass Substances 0.000 claims description 65
- 239000011787 zinc oxide Substances 0.000 claims description 40
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 37
- 229910052732 germanium Inorganic materials 0.000 claims description 33
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000002159 nanocrystal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 230000005670 electromagnetic radiation Effects 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 210000003298 dental enamel Anatomy 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000011161 development Methods 0.000 claims description 2
- 230000004313 glare Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims 28
- 229910044991 metal oxide Inorganic materials 0.000 claims 11
- 150000004706 metal oxides Chemical class 0.000 claims 11
- 239000012799 electrically-conductive coating Substances 0.000 claims 5
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- 239000011148 porous material Substances 0.000 claims 2
- 230000001133 acceleration Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000009472 formulation Methods 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- -1 pressure level Substances 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 22
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 35
- 239000002707 nanocrystalline material Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 11
- 239000002131 composite material Substances 0.000 description 9
- 210000002381 plasma Anatomy 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000013081 microcrystal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000004811 fluoropolymer Substances 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001485 argon Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 210000000130 stem cell Anatomy 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- XKVYZLLWKHGKMT-BEJOYRPXSA-N Gemin D Natural products O([C@@H]([C@@H](O)C=O)[C@@H]1[C@@H](O)COC(=O)c2c(c(O)c(O)c(O)c2)-c2c(O)c(O)c(O)cc2C(=O)O1)C(=O)c1cc(O)c(O)c(O)c1 XKVYZLLWKHGKMT-BEJOYRPXSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- XYXKKTCCOXMRPY-UHFFFAOYSA-N [B].[B].[B].[B] Chemical compound [B].[B].[B].[B] XYXKKTCCOXMRPY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910016462 cZnO Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 229930192479 gemin Natural products 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005960 long-lasting response Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
- H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/077,271 US20090229663A1 (en) | 2008-03-17 | 2008-03-17 | Nanocrystalline photovoltaic device |
| US12/077,275 US20090233007A1 (en) | 2008-03-17 | 2008-03-17 | Chemical vapor deposition reactor and method |
| US12/077,273 US20090229664A1 (en) | 2008-03-17 | 2008-03-17 | Method of manufacturing nanocrystalline photovoltaic devices |
| US12/077,272 US7993752B2 (en) | 2008-03-17 | 2008-03-17 | Transparent conductive layer and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201001728A true TW201001728A (en) | 2010-01-01 |
Family
ID=41091440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098108571A TW201001728A (en) | 2008-03-17 | 2009-03-17 | Nanocrystalline photovoltaic device |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201001728A (fr) |
| WO (1) | WO2009117083A2 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103430317A (zh) * | 2011-01-19 | 2013-12-04 | Tel太阳能公司 | 用于制造透明导电氧化物多层的方法 |
| TWI549312B (zh) * | 2010-03-01 | 2016-09-11 | First Solar Inc | 光伏打模組製造技術 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009050234A1 (de) | 2009-10-21 | 2011-05-05 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle |
| US8114702B2 (en) | 2010-06-07 | 2012-02-14 | Boris Gilman | Method of manufacturing a monolithic thin-film photovoltaic device with enhanced output voltage |
| CN114792744B (zh) * | 2022-05-07 | 2024-04-02 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法和应用 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
| WO1995033688A1 (fr) * | 1994-06-06 | 1995-12-14 | Nippon Shokubai Co., Ltd. | Fines particules d'oxyde de zinc, procede de production de ces particules et leur utilisation |
| JP2984595B2 (ja) * | 1996-03-01 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
| US6261694B1 (en) * | 1999-03-17 | 2001-07-17 | General Electric Company | Infrared reflecting coatings |
| US6896981B2 (en) * | 2001-07-24 | 2005-05-24 | Bridgestone Corporation | Transparent conductive film and touch panel |
| US20060118406A1 (en) * | 2004-12-08 | 2006-06-08 | Energy Photovoltaics, Inc. | Sputtered transparent conductive films |
-
2009
- 2009-03-17 WO PCT/US2009/001664 patent/WO2009117083A2/fr not_active Ceased
- 2009-03-17 TW TW098108571A patent/TW201001728A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI549312B (zh) * | 2010-03-01 | 2016-09-11 | First Solar Inc | 光伏打模組製造技術 |
| CN103430317A (zh) * | 2011-01-19 | 2013-12-04 | Tel太阳能公司 | 用于制造透明导电氧化物多层的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009117083A2 (fr) | 2009-09-24 |
| WO2009117083A3 (fr) | 2010-01-14 |
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