201036112 六、發明說明： 【發明所屬之技術領域】 . 本發明侧於絕緣體上半導體⑽)結構之製造，該 結構例如為非圓形斷面及/或相當大的斷面面積。 【先前技術】 壯Ik著市场需求不斷持續地增加，絕緣體上半導體⑽） 裝置變得越來越重要。則技術對高效能薄膜電晶體(TFT) ❹，太陽能電池’和顯示器而言也變得越來越重要，譬如主動 式矩陣顯示器，有機發光二極體(_)顯示器，液晶顯示器 ⑽)’積體電路，光伏打裝置等等，結構可包括絕緣材 料上一層薄薄譬如石夕的半導體材料。 石取得SOI結構的各種方式包括晶格匹配基板上的石夕⑸） 磊晶成長.，以及黏結單晶砍晶片到另一石夕晶片。更進一步 的方法包括植入氫或氧離子的離子植入技術，在氧離子植 入的情况，形成以Si覆祕晶的氧化層，或者在氫離子 ¢)植人的情況，分離㈤離）薄&層轉結到另—具有氧化層 的Si晶片。 美國專利第7,176, 528號說明了 一種利用剝離技術產 生玻璃上半導體(S〇G)結構的處理方式。這些步驟包括： ω㈣w表面暴露至氫軒植人以產錄絲面；（ii) 讓晶片的黏結表面和玻璃基板接觸；〇ii)施加壓力，溫度 —和電壓到晶片和玻璃基板促進其間的黏結;和（iv)從石夕晶 片分離玻璃基板和砍薄膜層。 上述的方法在一些情況下和/或使用在一些應用時，容 201036112 j生令^討厭的效果。請參考圖1MD，以譬如氫離子的 離子經由表面21植入半導體晶片2〇，使得此種植入在整個 半導體晶片20的密度和深度是均勻的。 ’ 參考圖1A，當譬如石夕的半導體材料以譬如氫離子的離 子植入時會產生傷害部位。傷害部位層界定出剝離層&。 有些傷害部位以非常高的寬高比晶核形成於薄板(它們有 很大的有效直徑而幾乎沒有高度）。從植入離子產生的氣 ◎體，譬如H2擴散至薄板，形成相當高寬高比的氣泡。這些氣 泡中的氣體壓力非常高，估計可達約1〇千巴。 士圖1B的雙g頭所示，薄板*氣泡在有交文直徑内增長 直f它們互相很靠近，而使繼的石夕太弱而無法抵抗氣體 的回壓。由於沒有—個最佳的關始分離，就會隨機產生 多個分離前緣，_多個傳鮮過半導體晶片2()的裂隙。 靠近半導體晶# 20的邊緣，有好植人軒可以從富 含氫的表面跑出來。這是因為靠近凹槽（即晶片20的側邊 〇 壁板）的關係。更特別的是，在植入期間離子（譬如氫質子 )減速通過半導體晶片2〇(譬如矽）的結構，從晶格部位取代 些石夕原子產生缺陷的平面。當氫離子失去動能時，會變 成原子氫，並進一步界定出一個原子氫平面。在室溫下，石夕 晶格内的缺陷平面和原子氫平面都不穩定。因此，缺陷（空 隙)和原子氫互相移動形成熱穩定的空隙_氫成分。很多成 - 分集合在一起產生富含氫的平面。（加熱時，矽晶格通常會 沿著富含氫的平面分裂）。 並不是所有的空隙和氫都會崩解成空隙-氫成分。有 4 201036112 二隙氫成一分會從空隙平面擴散，最後離開石夕晶片2〇。因 =些^、子氫不會造賴離層22的分裂。靠近⑪晶片2〇的 . 氣原子有另外從晶格跑出的路徑。因此，石夕晶片20邊 緣區域的風濃度可能較低。較低的氫濃度會需要更高溫或 更長的時間來發展足_力量以支援分離。 <3 在間以沒有分離的邊緣產生帳蓬狀 的、:構24。在臨界壓力，沿著譬如u⑴平面㈤⑹相對弱 〇的平面會出現其餘半導體材料的裂痕，喊賴離層四和 石夕晶1 20的分離（圖1D)。然而，邊緣22A，挪是來自傷害部 位界疋出的主要分裂表面。這種非平面的分裂是令人討厭 的。分離的其它特徵包括剝離層22可以被描述成台地，而 裂隙出現的薄板錢泡，則由峽谷醜著。要注意的是，這 二σ地和峽谷無法在圖1£)精確顯示，因為這些細節是超過 所示的比例尺可描繪出的可能。 不想限制本發明在任何運作理論，我懷級用前述 ❹的技術，從開始分離到完成分離的時間大約是數十個微秒 。換句活說，分離的隨機開始和傳播大約是誦公尺/秒。 再者，不想_本發明在任何運作理論，細認為這種分離 速度是前述_離層22分裂表面令人討厭的特性所造成（ 圖 1D)。 美國專利第6, 〇1〇, 579號說明了 -種經由離子均勻植 '入洙度Ζ〇到半導體基板i〇的技術，將晶片的溫度降到開始 分離的;?盈度以下，然後在植入深度z〇附近的基板1〇邊緣引 進多個U:脈衝以達到”控制分裂前緣"。本發明採取直接 5 2〇l〇36li2 的分離方式，和美國專利第6, 010, 579號控制分裂前緣的方 式有顯著的不同，也和"隨機的”分裂方式不同。 •〜和先前討論的剝離層22和半導體晶片20分離相關的挑 哉’當SOI結構的大小增加，尤其當半導體晶片的形狀是長 =形時會更嚴重。這種長方形半導體晶片可使用在多個半 導體舖片耦合到絕緣體基板的應用上。更進一步有關鋪片 ^soi結構的製造細節可在美國第撕/()117354號專利公 〇告案中找到，其完整的說明在這裡也全部併入參考。 【發明内容】 ^為了方便說明，以下的討論常常是根據s〇u吉構。參考 ^種特定型態的SOI結構，使得本發明的說明更加容易，但 ^我們不希望也不應該解釋成以任何方絲關本發明的 範可。讀所使用的S0I縮寫一般是指絕緣體上半導體結 構，包括但不限枝絕賴切結構。同獅，所使用的201036112 VI. Description of the Invention: [Technical Field of the Invention] The present invention is directed to the fabrication of a semiconductor-on-insulator (10) structure, such as a non-circular cross section and/or a relatively large cross-sectional area. [Prior Art] Strong market demand continues to increase, and semiconductor-on-insulator (10) devices are becoming more and more important. Technology is also becoming more and more important for high-performance thin-film transistors (TFTs), solar cells, and displays, such as active matrix displays, organic light-emitting diode (_) displays, and liquid crystal displays (10). The body circuit, the photovoltaic device, and the like, the structure may include a thin layer of semiconductor material such as a stone material on the insulating material. The various ways in which the stone obtains the SOI structure include the crystal lattice matching on the substrate (5) epitaxial growth, and the bonding of the single crystal chopped wafer to another stone wafer. Further methods include ion implantation techniques in which hydrogen or oxygen ions are implanted, in the case of oxygen ion implantation, formation of an oxide layer coated with Si, or in the case of hydrogen ion implantation, separation (5) separation) The thin & layer is transferred to another Si wafer with an oxide layer. U.S. Patent No. 7,176,528 describes a process for producing a semiconductor-on-glass (S?G) structure using a lift-off technique. These steps include: ω (four) w surface exposure to hydrogen Xuanzhi people to produce silk surface; (ii) bonding the bonding surface of the wafer to the glass substrate; 〇 ii) applying pressure, temperature - and voltage to the wafer and glass substrate to promote bonding therebetween And (iv) separating the glass substrate and the chopped film layer from the Shixi wafer. The above method is in some cases and/or used in some applications, the effect of the 201036112 j. Referring to Fig. 1MD, the semiconductor wafer 2 is implanted via the surface 21 with ions such as hydrogen ions so that the density and depth of such implantation throughout the semiconductor wafer 20 are uniform. Referring to Fig. 1A, when a semiconductor material such as a stellite is implanted with ions such as hydrogen ions, an injury site is generated. The injury site layer defines the release layer & Some damage sites are formed on thin plates with very high aspect ratio nucleuses (they have large effective diameters with little height). Gases generated from implanted ions, such as H2, diffuse into the sheet to form bubbles of a relatively high aspect ratio. The gas pressure in these bubbles is very high and is estimated to be about 1 〇 kPa. As shown in the double g head of Fig. 1B, the thin plates* bubbles grow in the diameter of the cross-section. They are very close to each other, and the subsequent stone eve is too weak to resist the back pressure of the gas. Since there is no optimal off-separation, a plurality of separation fronts are randomly generated, _ a plurality of cracks that pass through the semiconductor wafer 2 (). Close to the edge of the semiconductor crystal #20, there is a good implant that can run out of the hydrogen-rich surface. This is due to the proximity of the grooves (i.e., the side walls of the wafer 20). More specifically, during implantation, ions (e.g., hydrogen protons) decelerate through the structure of the semiconductor wafer 2 (e.g., ruthenium), replacing the planes in which the ceremonies generate defects from the lattice sites. When hydrogen ions lose kinetic energy, they become atomic hydrogen and further define an atomic hydrogen plane. At room temperature, the defect plane and the atomic hydrogen plane in the Shi Xi lattice are unstable. Therefore, the defect (space gap) and the atomic hydrogen move to each other to form a thermally stable void-hydrogen component. Many of the groups are grouped together to produce a plane rich in hydrogen. (When heating, the germanium lattice usually splits along the hydrogen-rich plane). Not all voids and hydrogen will disintegrate into void-hydrogen components. There are 4 201036112 two gap hydrogen into one minute will spread from the void plane, and finally leave the Shi Xi wafer 2 〇. Because of some ^, the hydrogen does not cause the split of the separation layer 22. Near the 11 wafers, the gas atoms have another path that ran out of the crystal lattice. Therefore, the wind concentration in the edge region of the Shihua wafer 20 may be low. Lower hydrogen concentrations will require higher temperatures or longer to develop enough strength to support separation. <3 creates a tent-like structure with no separated edges. At the critical pressure, along the plane of the relatively weak 〇 such as u(1) plane (5) (6), the cracks of the remaining semiconductor material appear, shouting the separation of the separation layer 4 and the Shi Xijing 1 20 (Fig. 1D). However, the edge 22A, the main split surface from the damage boundary. This non-planar split is annoying. Other features of the separation include the peeling layer 22 which can be described as a platform, and the thin-plate blisters in which the cracks appear, which are ugly by the canyon. It should be noted that these two sigma and canyons cannot be accurately displayed in Figure 1 because these details are possible beyond the scale shown. Without wishing to limit the invention in any theory of operation, I would like to use the aforementioned technique of ❹, the time from the beginning of separation to the completion of separation is about tens of microseconds. In other words, the random start and spread of separation is about metric meters per second. Furthermore, it is not intended that the present invention, in any theory of operation, considers that this separation speed is caused by the annoying characteristics of the aforementioned split surface of the layer 22 (Fig. 1D). U.S. Patent No. 6, 〇1, 579 describes a technique for uniformly implanting ions into a semiconductor substrate via ions, reducing the temperature of the wafer to the beginning of separation; below the saturation, and then A plurality of U:pulses are introduced at the edge of the substrate 1 near the implantation depth z〇 to achieve "control of the splitting front". The present invention adopts a direct separation method of 5 2〇l〇36li2, and U.S. Patent No. 6,010,579 The way to control the splitting front is significantly different, and it is also different from the "random" splitting method. • The selection associated with the previously discussed separation layer 22 and semiconductor wafer 20 separation is increased when the size of the SOI structure is increased, especially when the shape of the semiconductor wafer is long = shape. Such rectangular semiconductor wafers can be used in applications where multiple semiconductor tiles are coupled to an insulator substrate. Further details regarding the fabrication of the tile ^soi structure can be found in the U.S. Patent No. 117,354, the entire disclosure of which is incorporated herein by reference. SUMMARY OF THE INVENTION For the convenience of description, the following discussion is often based on s〇u. The description of the present invention is made easier by reference to a particular type of SOI structure, but it is not intended or should be construed as a limitation of the invention. The S0I abbreviation used in reading generally refers to a semiconductor-on-insulator structure, including but not limited to a structure. With the lion, used
S0G縮寫-般是指玻璃上半導體結構包括但不限定是玻璃 上石夕結構。SOI縮寫涵蓋了 S0G結構。 依據本發明的—個或多個實施範例，形成絕緣體上半 導體(SOI)結_方法㈣置提供:在施辭導體晶片的植 入表面進行離子植人步驟，在界Μ施體半導體晶片剝離 層的橫截面上產生—_化層；以及讓轉體⑼在離子 植入步驟之前，_或之後，進行空間變化步_使這個弱 或多個參數，以至少—個χ-和Υ-方向，在整㈣ 片上空間變化。 空間變化步驟可促進剝離層和半導體晶片分離的特性 6 201036112 ’使知/7離是可方向性和/或時雖控制的。 參數可包括—個或多個下列項目的—械組合:⑴從 植入步驟產生的晶核形成部位密度;（i i )植入表面（或 又考，）弱化層的深度;（iii)從植人表面至少到弱化層 敕w成的傷害部位(譬如盲洞^和㈤利用溫度梯度在 正固弱化層增加缺陷部位的晶核形成和/或壓力。The S0G abbreviation generally refers to a semiconductor structure on glass including, but not limited to, a glass-on-the-ear structure. The SOI abbreviation covers the S0G structure. In accordance with one or more embodiments of the present invention, a semiconductor-on-insulator (SOI) junction is formed. The method (4) provides for an ion implantation step on the implanted surface of the conductor wafer, and a semiconductor wafer release layer at the boundary a cross-section produces a layer of _; and allows the swivel (9) to undergo a spatially varying step _ or after the ion implantation step, such that the weak or plurality of parameters, in at least one χ- and Υ-direction, Space changes on the whole (four) slice. The spatially varying step can promote the separation of the peeling layer from the semiconductor wafer. 6 201036112 'Improved directionality and/or time control. The parameters may include - a combination of one or more of the following: (1) the density of nucleation sites generated from the implantation step; (ii) the depth of the implanted surface (or test), the depth of the weakened layer; (iii) from the implant At least the damage surface of the human surface at least to the weakened layer (such as blind holes ^ and (5) using a temperature gradient in the positive solid weakening layer increases the nucleation and/or pressure of the defect site.
此方赫裝置更進—步提·趙半導體晶片的溫度 2到足以從弱化層的—點，邊緣，和/或區域在弱化層開 離可進一步使施體半導體晶片的溫度足以繼續在沿 耆弱化層的方向分離，為變化參數的函數。 ° /當本發明這裡的說明配合附圖一起參考時，其他方面， 目y_ ’優點等，對熟悉此項技術的人而言，將會變得顯而 見0 【實施方式】 〇 —參考_，同樣的編號代表囉的元件，依據本發明的 了個或多個實施範例，圖2A—2B顯示的是中間S0I結構(尤其 G、。構）。中間s〇I結構包括譬如玻璃或玻璃陶竟基板 的絕緣體基板，和施體半導體晶片12〇。玻璃或玻璃陶 ^板102和_轉體晶片⑽可使肢項技術任何已知 、处理過程麵合在U如黏結，縣，黏著等。 在將玻璃或_贼基板1()2和轉體晶片12〇轉 合在一起之前，施辭導體⑼m包括暴露雜人表面121 。讓施體半紙雜人表面⑵進娜子植入步驟 ’在界定出剝離層122的橫截面上產生一個弱化層125。弱 7 201036112 ❹ 化層125位在平行於界定出χ_γ正交軸方向的參考表面（可 —能在任意處，因而未顯示）。X—軸方向在圖2Α中是從左到右 顯示，、而Υ-軸方向是正交於χ—軸方向到頁内（因而未顯示） 二讓半導體“ 120絲子植人步驟之前，_或之後 行空間變化步驟以使_層⑵和半導體晶片⑽的分離 性是可方向性和/或時間性控制的。然而不想限制本發明、 在任何運作理論，我們相信這種可方向性和/或時間性控制 可此改善分轉性，譬如瓣層122和半導 =的暴絲μ後私離）。_也撼賴可方向^ 秘制可能改善邊緣特性，譬如改善制離層丨22和 ^片120上暴露表面的邊緣，這是弱化層125界定出 的主要分裂表面。 制離層122和半導體晶片12〇可方向性和/或時間 制的分離可以數種方式達到，譬如以至少一個χ和γ - ❾ 整個弱化層125上改變—個或多個參數。這些來 個下列項目，單獨或組合:⑴從離子植二Γ 而、日日核形成部位密度；（ii)植入表面121(或參 ^的弱的部位125深度;（lli)從植人表 t ΓΓ^Γ造成的傷害部值（譬如盲洞和㈤利== 的則碩A所示，剝離層122和半導俨曰y 1〇Λ 的函數。廷通常可從下列達成：首先，改變如 8 201036112 以上所討論整個弱化層125上一個或多個的空間參數，第二 ，提升半導體晶片的溫度到足以在弱化層的-點，邊緣，和/ 或區域開始分離。因此，進一步提升施體半導體晶片的溫 度’使其足以繼續在沿著弱化層125的方向分離，為整個弱 的部位125空間變化參數的函數。最好建立變化的參數使 得提升溫度的時間-溫度量變曲線圖是大約數秒，沿著弱化 層125的分離傳播發生超過至少一秒。The square device is further advanced. The temperature of the semiconductor wafer is sufficient to remove the point, edge, and/or region of the weakened layer from the weakened layer to further extend the temperature of the donor semiconductor wafer. The direction of the weakened layer is separated as a function of the varying parameters. ° When the description of the present invention is referred to with reference to the accompanying drawings, other aspects, the advantages of the present invention, etc., will become apparent to those skilled in the art. [Embodiment] 〇—Reference _ The same reference numerals denote elements of the crucible, and according to one or more embodiments of the present invention, FIGS. 2A-2B show the intermediate SOI structure (especially G, structure). The intermediate sI structure includes an insulator substrate such as a glass or glass ceramic substrate, and a donor semiconductor wafer 12A. The glass or glass ceramic plate 102 and the _ turntable wafer (10) can be used to make any known process of the limb technique, such as bonding, county, adhesion, and the like. The linguistic conductor (9)m includes a exposed surface 121 before the glass or thief substrate 1() 2 and the swivel wafer 12 are joined together. The donor half-paper surface (2) into the nano-implantation step' produces a weakened layer 125 in the cross-section defining the release layer 122. Weak 7 201036112 The 125 layer 125 bits are parallel to the reference surface defining the χ_γ orthogonal axis direction (can be anywhere, and thus not shown). The X-axis direction is shown from left to right in Figure 2, and the Υ-axis direction is orthogonal to the χ-axis direction to the page (and thus not shown). Second, let the semiconductor "120 filament implant step, _ Or after the spatial variation step to make the separation of the _ layer (2) and the semiconductor wafer (10) directional and/or temporally controlled. However, without wishing to limit the invention, in any theory of operation, we believe this directionality and / Or temporal control can improve the branching, such as the valve 122 and the semi-conductor = after the rubs μ privately.) _ also depends on the direction ^ secret system may improve the edge characteristics, such as improving the separation layer 和 22 and The edge of the exposed surface of the sheet 120, which is the major splitting surface defined by the weakened layer 125. The separation of the salient layer 122 and the semiconductor wafer 12 can be achieved in several ways, such as at least one χ and γ - 改变 The entire weakened layer 125 is changed by one or more parameters. These are the following items, either alone or in combination: (1) from the ion implanted, and the nucleus formation site density; (ii) the implant surface 121 (or a weak part of the depth of 125; (lli) The damage value from the implanted table t ΓΓ^Γ (such as the blind hole and (5) profit ==, as shown by the master A, the function of the peeling layer 122 and the semi-conducting 俨曰 y 1 。. The court can usually be achieved from the following First, change the spatial parameters of one or more of the entire weakened layer 125 as discussed above in 8 201036112. Second, raise the temperature of the semiconductor wafer sufficiently to begin separation at the -point, edge, and/or region of the weakened layer. Further increasing the temperature of the donor semiconductor wafer is such that it is sufficient to continue to separate in the direction along the weakened layer 125 as a function of spatially varying parameters for the entire weak portion 125. It is preferred to establish varying parameters such that the time-temperature variation of the elevated temperature is varied. The graph is approximately a few seconds and the separation propagation along the weakened layer 125 occurs for more than at least one second.
Ο 現在凊參考圖3A-3C,進一步顯示關於在整個弱化層 125上改變一個或多個空間參數的細節。圖3Α是經由植入 表面12j觀看施體半導體“ 12Q_視圖。χ，方向陰影 的變化是代表紐的空間變化(譬如晶核形成部位密度，部" 位内壓力，晶娜朗程度，人工產生傷害部位(洞）的分佈 ’植入深度等。在所示的例子中，一個或多個的參數以χ—軸 方向從施體半導體晶片頭因而是其_弱化層125) 一個 邊緣130Α變化朝向相反的一個邊緣13〇Β，反之亦然。 參考圖3Β，這是分離參數的圖表，其顯示的是弱化層 做内晶核形成部位密度的橫戴面圖，為χ_轴方向的函^。 或者或此外，分離參數可表示一個或多個晶核形成部位内 ，力’晶核形成的程度，人工產生傷害雜⑽）的分佈等 每個都可為X-軸空間測量的函數。請參相％這是分離 =圖表’其顯示弱化層125内晶核形成部位深度(對應 離子植入的深度）的橫截面圖，為X-軸方向的函數。 不想限制本發明在任何運作理論，我們相 的晶核形成部位麵目當㈣，會發魏邊緣_朝向邊 201036112 邊緣30B的刀離傳播（以虛線的箭頭表示)，並且降低朝向 緣130B二間位置的晶核形成部位密度。這個理論也被認為 '是和其他參數鱗養，譬如晶細Μ雜⑽氣體壓力， .分離之前晶核形成部位聚集的程度，和人工產生傷害部位（ 洞）的，佈。至於和弱化層125深度相關的參數，我們認為 田著弱化層125的起始邊緣麗出現較低的深度時，會發 生^邊緣13GB朝向邊緣13()Α的分轉觀以實_箭頭表 〇不），而出現比較高的深度時，可連續地躺邊緣丨更遠 的距離。 現在參考圖4A-4C，進-步顯示關於在整個弱化層125 上改變-個或多個空間參數的細節。圖顯示的是經由植入 表面121觀看施體轉體晶片的頂視圖。X—軸和γ—軸方 向陰衫的變化是代表參數的空暖化，即晶核形成部位密 度，雜喊力，晶娜成的程度，人1魅傷害部位（洞） 的/刀佈，植入深度等。在每個所示的例子中，參數在X—軸和 〇 γ—軸兩個方向空間變化。 π特別參考圖4Α’陰影是代表從兩個邊緣j猶，13〇ί)開 始朝向其他邊緣1綱，咖的空間參數變化在χ_軸和卜袖 =向更進-步的距離改變。為了跟的上以上的討論，在考 • 晶核形成部絲度的參數時，假使在邊緣1繼，的起 二邊緣有較尚的密度，那麼分離的傳播（以虛線箭頭表示） 曰從邊緣130Α’ 130D的角落輕射朝向晶片12〇的中央，並朝 向其他邊緣130Β，130C。這個理論也被認為是和其他參數 保持聯繫，譬如晶核形成部位_氣顏力，分離之前晶核 201036112 形成部位聚集的程度，和人工產生傷害部位（洞）的分饰。 至於和弱化層125深度相關的參數，我們認為當沿著邊緣 .刪’懦㈤始降低深度時，分離的傳播（以實線箭頭表示） 從邊緣13GB，130C的肢細朝向晶片12G中央並朝向其 他邊緣 130A，130D。 、 特別參考圖4B和4C，陰影代表從所有邊緣13〇開始，並 朝向施體半導體晶片12〇中央的空間變化參數，反之亦然。 〇 現在提供進—步的細節，參考在X-軸和Y-軸的-個或 兩個方向整個弱化層125上離子植入所產生的晶核形成部 2密度空賴化的特定參數。不管使用什麼技術達到這種 空間變化，晶核形成雜最大密度最好是存在弱化層125的 二點，邊緣，或區域約5xl05部位/嘁而晶核形成部位最小 密度存在離開弱化層125約5xl〇4部位/cm2。以另一種方式 看待這種變化，最大晶_成雜缝和最小晶核形成部 位密度之間的差異大約1〇倍。 G 依據本發明的一個或多個實施範例，可藉著改變離子 植^步驟的劑量，空間改變弱化層125内晶核形成部位密度 經由#景，紐人表面121進行-個❹個離子植入步驟 ，產生弱化層125(因而是剝離層122)。雖然在這方面可使 用很多種植入技術，機器等，但-種適合的方法指出施體半 導體晶® 120的植入表面121可進行氫離子植入步驟，至少 開始產生施體半導體晶片120的剝離層122。 請參考® 5A，顯示的是Axcelis阶_1〇型態整批植入器 的簡圖，藉著改變植入離子的劑量，可修改用於弱化層125 11 201036112 内日日核形成部位密度的空間改變。 二個知體半導體晶片12〇，在這個例子是長方形舖片可 "口目、於入射離子束(指向到頁内）的滾筒觸上以固定 .徑呈方位角的分佈。滾筒200的旋轉提供擬—χ—掃瞒 ο ’而正個滾筒⑽的機械式平移提供Υ-掃猫(dY/dt)。使用 =7這烟是鳴小的滾筒⑽半徑，和大型的滚 Ξ起來，X—掃目苗比較彎曲，因此在這種滾筒200上 速;全筆直的掃瞄。調整X—掃瞄速度和，或¥铜 ^r_中央時，可使用增； =二、▲。的確，此項技術傳統的思考是達到空間均句’、 當相對於施體半導體晶片12〇的角度速度減少到接 ^同細中央時，卜掃瞒速度必_應地增加。然而，依 發明，可以不執著於傳_掃猫财翻 ο ^產生譬如圖跑A的圖案。例如，當離子束向 k朝向滾筒中央時，可保持卜掃瞒速度均勻。或者 束202徑向通過朝向滾筒觸中央時，我們也可以減 掃瞒速度。熟悉此項技術的人，可從這裡的說明得知 ^他的可能性。另一種方式是改變射束能量，為掃瞒速率 、:置的函數。這觀變可透過修改軟财植人器的控制 决舁法，控制軟體和終端站驅動程式之間的電子介面 他機械式的修改。 ，及八 t參考圖5B，顯示的是單一基板χ_γ植入器的簡圖，藉著 改變植入離子的劑量可修改用於弱化層125内晶核形成部 12 201036112 位密度的空間改變。在這個例子中，電子束2〇2掃瞄比機械 式基板掃瞄快（圖5A)。再者，此項技術傳統的思考是達到 工間均勻的劑量，因而設定X和γ掃瞄速率和射束能量以達 到均勻的劑量。再者，可以不執著於傳統的掃瞄協定，達到 空間改變的劑量。藉由無數變化的χ*γ掃瞄速率和/或射 束能量組合，可在植入劑量内達到顯著的空間改變。可產Ο Referring now to Figures 3A-3C, details regarding changing one or more spatial parameters across the weakened layer 125 are further shown. Figure 3 is a view of the donor semiconductor "12Q_ view through the implanted surface 12j. χ, the change in the direction shadow is representative of the spatial variation of the nucleus (such as the density of the nucleation site, the part " the pressure in the position, the degree of the crystallization, the artificial The distribution of the injury site (hole) is generated 'implantation depth, etc. In the example shown, one or more parameters vary from the donor semiconductor wafer head and thus its weakening layer 125 to an edge 130Α in the χ-axis direction. Referring to the opposite edge 13〇Β, and vice versa. Referring to Figure 3Β, this is a graph of the separation parameter, which shows the transverse wear surface of the weakened layer as the density of the inner nucleation site, which is the direction of the χ_axis direction. Alternatively or in addition, the separation parameter may represent one or more nucleation sites, the degree of force 'nucleation, the distribution of artificially generated damage (10)), etc., each of which may be a function of X-axis spatial measurement. Please refer to %. This is the separation = graph 'which shows the cross-section of the nucleation site depth (corresponding to the depth of ion implantation) in the weakened layer 125, as a function of the X-axis direction. Do not want to limit the invention in any theory of operation. The nucleation site of our phase is (4), which will send the Wei edge _ toward the edge 201036112 edge 30B knife propagation (indicated by the dashed arrow), and reduce the density of the nucleation site toward the edge 130B. The theory is also considered to be 'supplement with other parameters, such as fine crystal doping (10) gas pressure, the degree of aggregation of nucleation sites before separation, and artificially generated damage sites (holes), as for the depth of weakened layer 125 Related parameters, we think that when the starting edge of the weakened layer 125 appears at a lower depth, the edge 13GB will be turned toward the edge 13(), and the actual view will be compared. At high depths, the edges can be continuously lying further apart. Referring now to Figures 4A-4C, the details of changing one or more spatial parameters over the entire weakened layer 125 are shown in a step-by-step manner. The implant surface 121 views the top view of the donor body wafer. The change of the X-axis and the γ-axis direction of the negative shirt is representative of the parameter of air-heating, that is, the density of the nucleation site formation, the screaming force, the degree of Jingnacheng , person 1 charm The damage of the part (hole) / knife cloth, the depth of implantation, etc. In each of the examples shown, the parameters vary spatially in both the X-axis and the 〇 γ-axis. πSpecial reference Figure 4 阴影 'Shadow is representative The two edges j, 13〇ί) begin to face the other edges, and the spatial parameters of the coffee change in the χ_axis and the sleeve = the distance to the further step-step. In order to follow the above discussion, in the test • When the nucleation forms a parameter of the filament, if the edge of the edge 1 has a higher density, then the separation propagation (indicated by the dashed arrow) 轻 is lightly directed from the corner of the edge 130Α'130D toward the wafer 12〇 The center, and toward the other edges 130Β, 130C. This theory is also considered to be in contact with other parameters, such as the nucleation site _ qiyan force, the degree of formation of the nucleus 201036112 formation site before separation, and the artificial injury site ( The division of the hole). As for the parameters related to the depth of the weakened layer 125, we believe that when the depth is reduced along the edge. 懦(五), the propagation of the separation (indicated by the solid arrow) is from the edge of the edge 13GB, 130C toward the center of the wafer 12G and toward Other edges 130A, 130D. Referring particularly to Figures 4B and 4C, the shading represents spatial variation parameters starting from all edges 13 并 and toward the center of the donor semiconductor wafer 12, and vice versa. 〇 Now provide details of the further steps, referring to the specific parameters of the nucleation of the nucleation forming portion 2 produced by ion implantation on the entire weakened layer 125 in the - or both directions of the X-axis and the Y-axis. Regardless of the technique used to achieve this spatial variation, the maximum density of nucleation is preferably at two points of the weakened layer 125, the edge, or the region is about 5xl05 part/嘁 and the minimum density of the nucleation site exists about 5xl away from the weakened layer 125. 〇 4 parts / cm2. Looking at this change in another way, the difference between the maximum crystal-forming gap and the minimum nucleation forming site density is about 1 time. According to one or more embodiments of the present invention, by changing the dose of the ion implantation step, the density of the nucleation sites in the weakened layer 125 is spatially changed via the #景, the contact surface 121 to perform one ion implantation. In the step, a weakened layer 125 (and thus a peeling layer 122) is produced. Although many implanting techniques, machines, etc. can be used in this regard, a suitable method indicates that the implanted surface 121 of the donor semiconductor wafer 120 can be subjected to a hydrogen ion implantation step, at least beginning to produce the donor semiconductor wafer 120. The layer 122 is peeled off. Please refer to ® 5A, which shows a simplified diagram of the Axcelis order 〇 type of bulk implanter. By changing the dose of implanted ions, the density of the nucleation sites in the weakened layer 125 11 201036112 can be modified. The space changes. Two body-worn semiconductor wafers 12, in this case a rectangular patch, can be attached to the roller of the incident ion beam (pointing into the page) to fix the azimuth distribution. The rotation of the drum 200 provides a pseudo-broom ο ′ and the mechanical translation of the positive drum (10) provides a Υ-sweeping cat (dY/dt). With the =7, the smoke is the radius of the small drum (10), and the large roller is rolled up. The X-sweeping seedling is relatively curved, so the speed of the drum 200 is superimposed; a full straight scan. Adjust X-scan speed and, or ¥ copper ^r_ center, you can use increase; = two, ▲. Indeed, the traditional thinking of this technology is to achieve a spatial average sentence'. When the angular velocity relative to the donor semiconductor wafer 12 is reduced to the same center, the broom speed must increase. However, according to the invention, it is possible to not succumb to the _ sweeping the cat's wealth. For example, when the ion beam is directed toward the center of the drum, the sweep speed can be kept uniform. Or we can also reduce the sweep speed when the beam 202 is radially directed towards the center of the drum. Those who are familiar with the technology can learn from the description here that he is likely. Another way is to change the beam energy as a function of the broom rate, :. This change can be modified by modifying the control method of the soft financial device and controlling the electronic interface between the software and the terminal station driver. Referring to Figure 5B, a simplified diagram of a single substrate χ_γ implanter is shown, which can be modified to change the spatial density of the nucleation of the nucleation portion 12 201036112 in the weakened layer 125 by varying the dose of implanted ions. In this example, the electron beam 2〇2 scan is faster than the mechanical substrate scan (Fig. 5A). Furthermore, the traditional thinking of this technique is to achieve a uniform dose between the stations, thus setting the X and gamma scan rates and beam energy to achieve a uniform dose. Furthermore, it is possible to achieve a spatially varying dose without adhering to conventional scanning protocols. Significant spatial changes can be achieved within the implant dose by a myriad of varying χ*γ scan rates and/or beam energy combinations. Produce
生垂直或水平，一維或二維的梯度，經由這種變化產生譬如 圖3Α，4Α，4Β和4C的圖案。 明參考圖5C,顯示的是依據離子浴技術的植入器簡圖 二條帶射束綱從延伸的離子來職生。鋪傳統的技術， 早—均勻速度掃瞒(和正交方向的均勻射束能量成比例）可 達到傳統的目標，即空間均勻的劑量。然而，依據本發明的 各種特性，藉著改魏體半導體晶# 12()職帶射束綱的 式掃料率可以產生—維的梯度（㈣^旋轉卯度）。 糟者相對於條帶射束2〇4扭轉施體半導體晶片i2〇 一個角度 =及改變機械式掃瞒速率可賴似於圖Μ的方式產生劑 里内的空間變化。或者或此外，沿著射束來源的空間變化 射束電騎在編方向提共正交的梯度提供額外的自由度 以產生受支配的空間變化劑量。 不皆用來達到劑量變化的特定植入技術，不管最高劑 、著個或多個起始邊緣，起始點，或起始區域） 劑量量是在所要範圍内以原子/cm2為單位，而最低 /cn^t、他所要軸内的至少—個X—和卜軸方向以原子 、、、早立最呵劑量和最低劑量之間的差異可以在約1〇 13 201036112 3(U之間，最大變化約3倍。在一些應用上，至少、約⑽的差 異是报重要的。 依據本發_—種或以上進-步紐，可藉以真正均 句的方式植入第一離子成分，空間改變弱化層125内的晶核 形成邛位畨度建立真正均勻分佈的弱化層125。之後，可以 真正非均勻的方式植入第二離子成分到施體半導體晶片120 。建立真正非均勻的植入使得第二離子成分導致原子遷移 到弱部位125產生整個弱化層125上晶核形成部位空間改變 的毪度。舉例而言，第一離子成分可以是氫離子，而第二離 子成分可以是氦離子。 非均勻的植入可以使用上述技術，此說明中稍後的描 述，或從其他來源得知而產生。例如，第二離子成分的劑量 可以是空間變化的。第二離子成分（譬如He離子）的劑量變 化會導致接下來第二成分非均勻的遷移到第一離子成分的 位置，因而建立非均勻的晶核形成部位密度。這種變化可 改變薄板内的壓力，這也是有幫助的。 或者，第二離子成分非均勻的植入可包括植入第二離 子成分到整個施體半導體晶片120的空間變化深度。熟悉 此項技術的人可依據這裡所揭示的修改任何已知的植入離 子到均勻深度的技術以達到非均勻深度的量變曲線圖。在 背景中，我們知道He離子可以比氫離子植入的更深，譬如兩 倍深度或以上。晶片溫度增加時，报多He離子會遷移到較 淺氫離子植入的部位，提供稍後分離的氣體壓力。依據本 發明的此項特性，植入較深的He導致的傷害是位在施體半 14 201036112 舱>ΐ 120遠離較淺氫離子植人的深度，*且很少這種此 =在—&的時間她達。減的情況也是如此，植入 =深的He離子情況也是如此，因而會造成整個弱化層125 上晶核形成部位空間變化的密度。Vertical or horizontal, one- or two-dimensional gradients, resulting in patterns such as Figures 3Α, 4Α, 4Β and 4C. Referring to Figure 5C, there is shown a schematic diagram of the implanter according to the ion bath technique. Conventional techniques, with an early-to-uniform speed broom (proportional to the uniform beam energy in the orthogonal direction), achieve the traditional goal of a uniform spatial dose. However, according to various characteristics of the present invention, a gradient of (dimensional) (rotational twist) can be produced by changing the sweep rate of the beam of the semiconductor body. The worse is to reverse the donor semiconductor wafer i2 relative to the strip beam 2〇4. An angle = and changing the mechanical broom rate can be similar to the spatial variation in the generator in the manner of the pattern. Alternatively or additionally, the spatial variation of the beam source along the beam source provides a degree of freedom in the direction of the co-orthogonal gradient to produce a dominant spatially varying dose. Specific implant techniques that are not used to achieve dose changes, regardless of the highest dose, one or more starting edges, starting points, or starting regions. The dose amount is in atoms/cm2 in the desired range. The minimum / cn ^ t, at least one of the X - and the direction of the axis in the axis of his desired axis, the difference between the atomic dose, the early dose and the lowest dose may be between about 1 〇 13 201036112 3 (U, The maximum change is about 3 times. In some applications, at least, the difference of (10) is important. According to the present invention, the first ion component can be implanted in a true uniform sentence according to the present invention. Varying the nucleation within the weakened layer 125 to form a 畨 position creates a truly evenly distributed weakened layer 125. Thereafter, the second ionic component can be implanted into the donor semiconductor wafer 120 in a truly non-uniform manner. Establishing a truly non-uniform implant Having the second ionic component cause the atom to migrate to the weak site 125 produces a spatially varying enthalpy of the nucleation site on the entire weakened layer 125. For example, the first ionic component can be a hydrogen ion and the second ionic component can be a strontium ion. . Uniform implantation can be performed using the techniques described above, as described later in this description, or from other sources. For example, the dose of the second ionic component can be spatially variable. The second ionic component (such as He ion) The dose change causes the second component to migrate non-uniformly to the location of the first ionic component, thus establishing a non-uniform nucleation site density. This change can change the pressure within the sheet, which is also helpful. Non-uniform implantation of the second ionic component can include spatially varying depth of implantation of the second ionic component to the entire donor semiconductor wafer 120. Those skilled in the art can modify any of the known implanted ions according to the disclosure herein. The technique of uniform depth to achieve a quantitative curve of non-uniform depth. In the background, we know that He ions can be implanted deeper than hydrogen ions, such as twice the depth or above. When the temperature of the wafer increases, more He ions will migrate to The site where the shallower hydrogen ions are implanted provides a gas pressure that is later separated. According to this feature of the invention, a deeper He guide is implanted. The damage is in the body half 14 201036112 cabin > ΐ 120 away from the shallower hydrogen ion implanted depth, * and rarely this = in the time of - & her up. The same is true for the reduction, implant The same is true for the deep He ion, which results in a spatially varying density of nucleation sites on the entire weakened layer 125.
軸理論上不管第一和第二離子成分的順序（譬如先 植He或先植入η)都可達成晶核形成部位空間變化的密度 ，但多個離子植入步驟的順序也可達成所需的結果。的確， 〇 ί據離子成分，植人_柯能在錢上有整财果，甚至 岔度也會空間變化。雖然有點反直覺並令很多孰 術的人很科，我們魏先植錢料會產生㈣;j晶核 形成部位。以一定的計量而言，He被多熟悉此項技術的人 認為會比氫離子產生10倍的傷害。然而，應該要注意的是 He離子的傷害（空隙和有空隙的半導體原子，或斤她^對) ，甚至在室溫下會快速自行退火。因此，很多但不是全部的 He傷害是可以修復的。換句話說，氫離子和譬如&原子的 ◎ 半導體原子黏結(形成Si-H鏈)以穩定產生的傷害。如果H 在He植入之前就存在會產生更多的晶核形成部位。 現在參考圖6A-6B，顯示的是適合用來達到晶核形成部 位岔度空間改變的更進一步範例。在這個範例中，如圖6八 所示，可在離子植入步驟期間藉著調整離子束的射束角度 . 達到集結部位密度空間改變。雖然射束角度可藉著多種方 - 式調整，其中一種方式是讓施體半導體晶片120針對離子束 傾斜，如圖6A所示。施體半導體晶片120有一個寬度（如頁 面顯示從左到右），深度（深入頁内），和高度（如頁面顯示從 15 201036112 上到下）。I度和冰度可界定出Χ-和γ_軸彳向，而高度可界 疋出垂直於植入表面121的縱向轴l〇。傾斜施體半導體晶 片120以使縱向轴Lo在離子植入步驟期間是成針對植入射 束方向軸（以實心箭頭顯示）的角度φ。角度①可以是在約 1到45度之間。 ' 在傾斜的情況下，射束來源從位置Α掃瞄到位置Β，射束 2〇2的寬度W在施體半導體晶片12〇的植入表面121從寬度恥 〇變化到Wb，反之亦然。寬度W的變化會造成離子植入在掃猫 方向（可设定成沿著至少-個χ_和γ_軸方向）產生晶核形成 部位密度改變。 植入射束202可包括具有相同（正）電荷的氫離子。當 ^有相同電荷的粒子互相驅離時，射束2〇2在離離子來源田較 运的距離時車乂見(位置Α)，在離離子來源較近的距離時較窄 (位置Β)。位置Β較聚集(較低的寬度⑹的離子束會比位置 A車又不聚本（較同的見度呢）的離子束，加熱施體半導體晶片 ❹m的局部ϋ域聰高擁度。在較高的溫度下，較多氮離 •^會從這個局部區域槪，和其倾域比較，會辭較少的 虱離子。如ϋ 6Β所示，這會在施體半導體晶片12〇的弱化層 125内產，橫向的氫非均勻分佈（因而是晶核形成部位的密 度）。藉著調整射束來源的角度或併入一些已知的設計來 調整離子束202的準直可達到類似的晶核形成部位密 • 間改變。 料用來翻晶細彡成雜密度空間改變的更進一步 技術是使用二階段離子植入步驟。第一離子植入步驟是執 201036112 行具有吸引第二離子成分效果的離子植入。之後，植入第 一離子成分。第一離子成分是使用任何適合的前述或摘後 描述的技術以空間非均勻的方式植入。因此，當第二離子 成分植入時，會遷移到第一成分，產生的弱化層125會顯示 非均勻的晶核形成部位密度。 例如，第一離子成分可以根據施體半導體晶片12〇的材 料，譬如使用矽離子植入在矽施體半導體晶片12〇内。這種 〇 &離子的特性會捕捉第二離子成分譬如氫離子。如以上說 明的，氫離子和譬如Si原子的一些半導體原子黏結，形成& -Η鏈。舉例而言，可在此項技術已知的劑量和能量下，執行 矽到矽的植入，譬如美國專利第7,148,124號中所說明的， 其完整的說明在這裡也全部併入參考。然而，不同於先前 的技術，捕捉的離子成分(在這個例子是Si)空間密度分佈 是非均勻的（譬如在施體半導體晶片12〇的一邊是最高而 在相反一邊是最低，或這裡討論的其他變化）。接著植入 Q 譬如氫的第二離子成分，這可能是均勻的分佈。施體半導 體晶片120弱的部位125内剩餘的氫量可根據於兩個因素： (1)可捕捉譬如氫的第二離子成分的集中分佈部位，和（2) 可以使用的氫(植入的氫和植入劑量剩餘的氫）。 要注意的是，可反轉成分的非均勻空間分佈以達到類 似的結果。例如’可均勻植入第一離子成分，接著非均句植 - 入第二離子成分。或者，兩種植入都是空間非均勻的。弱 化層125内第二成分(譬如氫)的非均勻分佈會產生最高氫 濃度的-點，邊緣或區域，也就是開始分裂的最低溫度位置。 201036112 再參考圖2Α〜2Β今-5 Α 3 片咖可方向性和。’前碩Α顯不剝離層122和施體半導體晶 層125的-點邊、/或時間性控制的分離特性以達到從弱化 域的傳播分離為或區域，到其他一點，邊緣，和/或區 空間改變，提升施體3=^據_成部位密度的 層啟最高密声的—切體曰曰片的溫度，使其足以可從弱化 Ο 發現石夕中氫的點，邊緣，和/或區域，開始分離。我們 度的_ 在溫度35G°C或以下雜，而較低濃 晶片或更高分離。將施體半導體 足以繼續在沿著弱^；；體半導體晶片120的溫度 密度空間變化的函數的方向分離，為整侧化層125 現在提供進—步的細節，參考在X-軸和Y-軸的-個或 T個方向離子植入所產生的弱化層125深度空間變化的特 =參數。不管使用什麼技術達到這種空間變化，真正低的 深度最好在約細-38Gnm之間，碌高深度在約侧_425咖 〇之間。卩另一種方式看待這種變化，最大和最小深度之間 的差異可以是約5-200%。 依據本發明一項或多項，可藉著在離子植入步驟期間 調整離子束的射束角度，空間改變弱化層125的深度。的確 ，可應用針對圖6A-6B所討論的處理過程以調整弱化層125 的深度(要注意改變溫度作為射束寬度函數的設計機制，並 不被認為是達到弱化層125深度空間改變的理由）。 參考圖6A以及7A-7B,可精著改變至少下列—項達到 弱化層125深度的空間改變：（1)傾斜角度φ(請參考圖6A的 201036112 顯示和說明），（2)針對離子植入射束2〇2的方向轴，沿著其 縱向轴Lo扭轉施體半導體晶片12〇。調整傾斜和/’或口扭轉以 調整導向通過施體轉體晶片12〇晶格結構的—個角度，使 得當離子束202掃瞒整個植入表面121時，導向容易對^和 不對齊離子束202。當導向的角度空間改變時，弱化層125 的深度也會隨之改變。 角度Φ可以在約M0度之間，而扭轉角度可以在約卜 ^ 45度之間。 如同以上的推論，請進一步參考圖7C和7D，植入深度會 隨著傾斜變大而變小。對相對小的角度而言（譬如〇—1〇度） ，植入深度和傾斜的關係是由導向來控制。對相對大的角 度而言，是由餘弦效應控制。換句話說，所產生的玻璃薄膜 厚度是和入射角度的餘弦成正比。 或者或此外，空間變化步驟可包括改變離子束2〇2的能 量水準，使得當離子束202掃瞄施體半導體晶片12〇的整個 Q 植入表面12丨時，植入表面121的弱化層125深度也會在整個 施體半導體晶片12〇空間改變。 如圖7B所示，以上的技術產生施體半導體晶片12〇弱化 層（或植入深度）的橫向非均勻深度。 可以使用更進一步的參數，和施體半導體晶片120的傾 ' 斜一起調整，達到離子沉積分佈寬度（或分散）的空間變化 ， 。如圖8A所示，經過弱化層125(從上到下）的離子分佈寬度 改變是施體半導體晶片12〇(更一般而言是射束角度)傾斜 角度的函數。因此，可藉著改變傾斜角度，達到弱化層125 19 201036112 内空間變化的分佈寬度（如圖8B所示）。然而，不想被限定 於任何運作理論，我們認為具有較窄分佈寬度的弱化層125 部分會比具有較寬分佈寬度的弱化層125部分在較低的溫 度下分離。因此，我們相信剝離層122和施體半導體晶片 120可方向性和/或時間性控制的分離特性可達到從弱化層 125的一點’邊緣，和/或區域，到其他一點，邊緣，和/或區域 的傳播分離，為時間和溫度的函數。The axis theoretically achieves the spatially varying density of the nucleation sites regardless of the order of the first and second ionic components (such as implanting He or implanting η first), but the order of multiple ion implantation steps can also be achieved. the result of. Indeed, 〇 据 according to the ion composition, 植人_ Ke can have a whole fruit in the money, and even the temperature will change spatially. Although it is a bit counter-intuitive and makes many people with sorcerer's skills, we will produce (4); j nucleation sites. In terms of certain measures, He is more familiar with this technology and thinks it will cause 10 times more damage than hydrogen ions. However, it should be noted that the damage of He ions (voids and voided semiconductor atoms, or the pair of them) can be quickly self-annealed even at room temperature. Therefore, many, but not all, of the He damage can be repaired. In other words, hydrogen ions and 半导体 semiconductor atoms such as & atoms are bonded (forming a Si-H chain) to stabilize the resulting damage. If H is present before He implantation, it will produce more nucleation sites. Referring now to Figures 6A-6B, there is shown a further example suitable for achieving a spatial change in the nucleation site. In this example, as shown in Fig. 68, the beam angle of the collector portion can be changed by adjusting the beam angle of the ion beam during the ion implantation step. Although the beam angle can be adjusted in a variety of ways, one way is to tilt the donor semiconductor wafer 120 against the ion beam, as shown in Figure 6A. The donor semiconductor wafer 120 has a width (e.g., page display from left to right), depth (inside page), and height (e.g., page display from 15 201036112 up to down). The I degree and the ice degree can define the Χ- and γ_ axis directions, and the height can be bounded perpendicularly to the longitudinal axis l〇 of the implant surface 121. The donor semiconductor wafer 120 is tilted such that the longitudinal axis Lo is at an angle φ to the implant beam direction axis (shown by solid arrows) during the ion implantation step. Angle 1 can be between about 1 and 45 degrees. In the case of tilting, the beam source is scanned from the position Α to the position Β, the width W of the beam 2〇2 changes from the width shame to Wb on the implant surface 121 of the donor semiconductor wafer 12〇, and vice versa . A change in the width W causes the ion implantation to change in the direction of the sweeping cat (which can be set to along at least one of the χ_ and γ_axis directions). Implanted beam 202 can include hydrogen ions having the same (positive) charge. When the particles with the same charge are driven away from each other, the beam 2〇2 is seen at a distance from the ion source field (position Α), and is narrower at a distance closer to the ion source (position Β) . The position Β is more concentrated (the ion beam of the lower width (6) will be higher than the ion beam of the position A and not the same (the same visibility), and the local semiconductor ❹m of the donor semiconductor wafer is heated. At higher temperatures, more nitrogen will pass from this localized region, and compared with its sloping domain, it will repel less strontium ions. As shown by ϋ6Β, this will be in the weakened layer of the semiconductor wafer 12〇. 125 is produced internally, the lateral hydrogen distribution is non-uniform (and thus the density of the nucleation sites). Similar crystals can be achieved by adjusting the beam source angle or incorporating some known designs to adjust the collimation of the ion beam 202. A further technique for the change of the nucleation site is to use a two-stage ion implantation step. The first ion implantation step is to perform the 201036112 line to attract the second ion component. Ion implantation. Thereafter, the first ionic component is implanted. The first ionic component is implanted in a spatially non-uniform manner using any suitable technique described above or later. Thus, when the second ionic component is implanted, Move To the first component, the resulting weakened layer 125 will exhibit a non-uniform nucleation site density. For example, the first ionic component can be implanted on the donor semiconductor wafer according to the material of the donor semiconductor wafer 12, for example, using erbium ions. Within 12 。, the characteristics of this 〇 & ion capture a second ionic component such as a hydrogen ion. As explained above, the hydrogen ion and some semiconductor atoms such as Si atoms are bonded to form a & Η chain. For example, The implantation of sputum to sputum can be performed at doses and energies known in the art, as described in U.S. Patent No. 7,148,124, the entire disclosure of which is incorporated herein by reference. The technique that captures the ionic composition (in this case Si) is that the spatial density distribution is non-uniform (such as the highest on the side of the donor semiconductor wafer 12 and the lowest on the opposite side, or other variations discussed here). Q, such as the second ionic component of hydrogen, which may be a uniform distribution. The amount of hydrogen remaining in the weak portion 125 of the donor semiconductor wafer 120 may be based on two factors. (1) A concentrated distribution of the second ionic component that captures, for example, hydrogen, and (2) Hydrogen that can be used (implanted hydrogen and hydrogen remaining in the implanted dose). Note that the reversible component Non-uniform spatial distribution to achieve similar results. For example, 'the first ion component can be uniformly implanted, and then the non-sequence is implanted into the second ion component. Or both implants are spatially non-uniform. The weakened layer 125 The non-uniform distribution of the second component (such as hydrogen) will produce the highest hydrogen concentration - point, edge or region, which is the lowest temperature position at which to start splitting. 201036112 Referring again to Figure 2Α~2Β今-5 Α 3 piece of coffee directionality And 'the front Α Α 剥离 剥离 122 122 和 和 和 和 和 和 和 和 和 和 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 122 / or change the area of the space, increase the temperature of the donor body 3 = ^ according to the density of the part of the layer - the highest density of the cilia - the temperature of the cut piece, so that it can be found from the weakened Ο 石 氢 氢 氢 氢 氢 氢 氢And / or area, start separation. Our degree _ is mixed at a temperature of 35G ° C or below, while the lower concentration wafer or higher is separated. The donor semiconductor is sufficient to continue to separate in a direction along a function of the spatial variation of the temperature density of the bulk semiconductor wafer 120, and now provides further details for the trimmed layer 125, referenced to the X-axis and Y- The ion-implantation of the axis-- or T-direction ionization produces a special = parameter of the depth-of-space variation of the weakened layer 125. Regardless of the technique used to achieve this spatial variation, the true low depth is preferably between about -38 Gnm and the depth is between about 425 calories. Another way to look at this change is that the difference between the maximum and minimum depths can be about 5-200%. In accordance with one or more aspects of the present invention, the depth of the weakened layer 125 can be spatially varied by adjusting the beam angle of the ion beam during the ion implantation step. Indeed, the process discussed with respect to Figures 6A-6B can be applied to adjust the depth of the weakened layer 125 (note the design mechanism for changing the temperature as a function of beam width, and is not considered to be the reason for achieving the depth space change of the weakened layer 125) . Referring to Figures 6A and 7A-7B, at least the following - items can be finely changed to achieve a spatial change in the depth of the weakened layer 125: (1) tilt angle φ (refer to 201036112 shown and illustrated in Figure 6A), (2) for ion implantation The direction axis of the beam 2〇2 is twisted along the longitudinal axis Lo thereof to apply the semiconductor wafer 12〇. Adjusting the tilt and/or the mouth twist to adjust the angle of the lattice structure through the donor body wafer 12 such that when the ion beam 202 sweeps the entire implant surface 121, the guide is easy to align and misalign the ion beam 202. As the angular extent of the orientation changes, the depth of the weakened layer 125 also changes. The angle Φ can be between about M0 degrees, and the twist angle can be between about 45 degrees. As with the above inference, please refer to Figures 7C and 7D further, the implantation depth will become smaller as the inclination becomes larger. For relatively small angles (such as 〇-1〇), the relationship between implant depth and tilt is controlled by steering. For relatively large angles, it is controlled by the cosine effect. In other words, the thickness of the resulting glass film is proportional to the cosine of the angle of incidence. Alternatively or in addition, the spatially varying step can include varying the energy level of the ion beam 2〇2 such that when the ion beam 202 scans the entire Q implant surface 12丨 of the donor semiconductor wafer 12〇, the weakened layer 125 of the implanted surface 121 The depth will also vary over the entire donor semiconductor wafer 12 。 space. As shown in Figure 7B, the above technique produces a lateral non-uniform depth of the weakened layer (or implant depth) of the donor semiconductor wafer 12. Further parameters can be used, along with the tilting of the donor semiconductor wafer 120, to achieve spatial variations in the width (or dispersion) of the ion deposition distribution. As shown in Figure 8A, the change in ion distribution width through the weakened layer 125 (from top to bottom) is a function of the tilt angle of the donor semiconductor wafer 12 (more generally, the beam angle). Therefore, the distribution width of the spatial variation in the weakened layer 125 19 201036112 can be achieved by changing the tilt angle (as shown in FIG. 8B). However, without wishing to be bound by any theory of operation, we believe that the portion of the weakened layer 125 having a narrower distribution width will be separated at a lower temperature than the portion of the weakened layer 125 having a wider distribution width. Accordingly, it is believed that the delamination layer 122 and the donor semiconductor wafer 120 can be directional and/or temporally controlled to have separation characteristics from a point 'edge, and/or region of the weakened layer 125 to other points, edges, and/or The separation of the regions is a function of time and temperature.
請參考® 8C，有關傾斜在分散效應上的額外資料，又會 衝擊植入量變曲線圖的寬度。圖8C所示兩種植入的劑量是 一樣的。雜辨H紐是獅的，但_獻_會分離 。因此，±0.1度和±3度傾斜改變之_差異，對分散而言 是很明顯的。 、翁另一種弱化層125空間改變深度的技術包括讓施體半 =體晶片120進行後續的植人材料移除處理，使得植入表面 弱化層125的深度在整個施體半導體 ^的。如圖9A所示，可使施體半導體晶請 = _研磨處理顧或離子體辅魏學侧(⑽）。料技疋 術可局部控制研磨步驟所移除的材料量 = f肌化學機械式研磨_),和t 3 :則:可f的整個暴露表面，也可以有非均勻的材: 或多種這些或其他技術’造成植入表 他圖所顯-^ ^度的些微變化，譬如圖3A，4A，4B’ 4C和1 他圖所顯不的。在材料移除 可昇 間均句或非均勻的。*之_離子植人步驟可以是空 20 201036112 曰參考圖9B和9C，空間改變的步驟可包括在施體半導體 日日# 120植入表面⑵上以非均勻的方式使用遮罩22〇a或 ，使彳于田離子束2〇2掃瞄整個植入表面κι時，阻止離 子的穿透為不同的程度。遮罩薄膜220可包括二氧化石夕 譬如光阻的有機聚合物，和其他。可能氣積技術包括加 強離子體的化學蒸氣沉積(PECVD)，旋轉塗膜，聚二甲基矽 氧院(PDMS)衝壓等。遮罩薄膜22()的厚度可小於或比擬弱 〇化f，所需的深度。因為植入離子的深度是以入射離子 的月b里來枝，遮罩’的阻勸作會轉魏施體半導體晶 片120内主要植入成分深度的空間調變。根據沉積薄膜挪 的特!·生’可藉著增加離子路徑的長度達到所需的特性，讎 離子以更改導向的度數，或其他現象。 ’、 如H 9D所示（顯示弱化層j 25所有邊緣的較低深度和朝 向中央的較高深度)，施體轉體晶片12G在黏結到基板1〇2 之後和期間，提升到足以在弱化層125較低深度的一點，邊 〇緣，和/祕_始分離。進—步提升施體轉體晶片12〇 的溫度，使其足以繼續在沿著弱化層125的方向分離，為從 最低深度到最高深度空間變化的函數。 參考圖10A-10D及11，空間改變的步驟可包括鑽一個或 多個的盲孔230穿過植入表面121至少到弱化層125,最好是 穿過弱化層125(圖10B)。不想限制本發明在任何運作理論 ，我們相信在黏結到基板1〇2(圖l〇C)期間或之後，提升施體 半導體晶片120到較高的溫度，在沒有這些孔的位置分離之 前在這些盲孔2別（圖議)開始分離。如圖n所示鑽一個 21 201036112 盲孔230陣列穿過植入表面121可以產生這些孔非均勻的空 間分佈。因此，提升施體半導體晶片12〇的溫度，使其足以 開始並繼續在沿著弱化層125的方向分離，從最高到最低濃 度，為盲孔230陣列分佈的函數。 參考圖12A-12B，空間改變的步驟可包括讓施體半導體 晶片120受制於非均勻的時間—溫度量變曲線圖，使得在整 個把體半導體晶片120穿過弱化層125的各個空間位置的晶 〇核形成部位密度或塵力是空間變化的。例如，圖12所示的 溫度梯度施加比右邊較高的溫度到晶片12〇的左邊。這種 溫度梯度可以在黏結之前，或黏結到基板1〇2期間在原地施 加。經過一段時間，假使處理時間維持在低於特定處理溫 度的分離門檻，至少-個缺陷的asa獅成部位和那裡的氣 體壓力，在整個弱化層125會以空間變化的度數在整個晶片 120增加，為溫度梯度的函數(請見圖12B)。我們希望特定 處理溫度的分離門插時間是遵循著Arrhenius關係，分離門 〇播時間疋和處理溫度的倒數成指數正比。重要的參數是在 處理溫度的處理時間和分離門播的比例。這裡討論的或需 要的任何前述空間變化參數量變曲線圖，可藉著調整處理 時間-分離時間比的量變曲線圖而達成。接著，施體半導體 晶片的溫度提升到足以從弱化層125的—點，邊緣，和/或最 大處理時間为離時間比的區域開始分離。在所示的例子 _中，最大處理時間-分離時間比是在晶片120的左邊。接著 ，進一步提升施體半導體晶片120的溫度，使其足以繼續沿 著弱化層125的^向分離，從最A處理時間_分離時間比到 22 201036112 理時間比，為變化時間'溫度量變曲線圖 植入、、罙产艮直^才料特徵和其他因素，包括離子成分，劑量和 又^、w的處理時間'分離時間比是在約0.9和0. Ο Ο %而取低的處理時間'分離時間比是在約G和〇. 5之間 二=使用各種預先黏結或在原地黏結的機制，達到空間改 、’時間-溫度量變曲_。例如，可以使用—個或多個空間 $均勾的傳導’對流’或輻射加熱技術(加熱板，雷射幅照， 可見的/紅外燈，或其他)，來加熱施體半導體晶片⑽。可 藉由直接或間接的熱接觸(傳導)達到控制的時間/溫度梯 ^達成任何所需的f變曲線圖。可根據電驗制或程式 没计，使用二維陣列的加熱板元件，達到不同的量變曲線圖 。例如，使用快速熱退火的(輕射）的燈局部紅外線輕射，和 /或使用可見的或近紅外線雷射幅射來提供局部和空間非 句勻的力u熱(幸田射）。或者，可透過任何方式使用空間非均 勻的冷卻_，譬如直接細(料)，或缝錢體流喷射 (傳W對流)，使用均勻或非均勻的熱量變曲線圖，達到所 需的時間-溫度梯度。 再者，可以在預先黏結或在原地使用這些加熱/冷卻技 術。一起使用原地黏結技術，黏結裝置說明於例如為美國 第11/417,445號專利中，該發明名稱”則曲？挪{)沈扣111^ Anodic Bonding Apparatus，該專利之說明在此加入作為 參考，該黏結裝置能夠使用於本發明。可控制黏結裝置的 熱輕射耗損管理，經由合併黏結裝置周圍的紅外線反射元 件，最小化輻射耗損並最大化邊緣溫度。相反地，可控制黏 23 201036112 結裝置的熱輻射耗損管理，經由合併冷卻的紅外線吸收器， 最大化輻射耗損並最小化邊緣溫度。可使用上述主題的很 多種變化達到所需的時間-溫度梯度。 ' 雖然本發明在此已對特定實施例作說明，人們瞭解這 些實施例只作為說明本發明原理以及應用。因而人們瞭解 列舉性實施例能夠作許多變化以及能夠設計出其他排列而 並不會脫離下列申請專利範圍界定出本發明精神及原理。 0 應該只受限於下列申請專利範圍。 【圖式簡單說明】 在所有附圖中，"X”表示X—軸方向，” Y”表示γ_轴方向。 圖1Α，1Β，1C，及1D為方塊圖，其顯示出先前技術剝離處 理過程。 圖2Α-2Β為方塊圖，其顯示出依據本發明一項或多項之 剝離處理過程。 圖3Α為依據本發明一項或多項之施體半導體晶片的頂 Q 視圖，該晶片具有其中相關弱化層之空間變化參數。 圖3Β為曲線圖，其圖示地顯示出圖μ空間變化參數。 3Β· 1表示分離參數。 圖3C為曲線圖，其圖示地顯示出圖3Α空間變化參數為弱 化層之深度。3C. 1表示植入深度。 圖4Α，4Β，及4C為本發明一項或多項之各別施體半導體 - 晶片之頂視圖，該晶片具有空間變化參數。 圖5Α, 5Β，及5C為一些離子植入裝置之簡圖，其可使用 來達成空間變化參數。在圖5Α中，dx/dt表示掃猫;以及άγ/ 24 201036112Please refer to the ® 8C for additional information on the effect of the tilt on the dispersion effect, which in turn impacts the width of the implanted volume change curve. The doses of the two implants shown in Figure 8C are the same. Miscellaneous H is a lion, but _ _ will be separated. Therefore, the difference in the ±0.1 degree and ±3 degree tilt changes is apparent for dispersion. Another technique for spatially varying the depth of the weakened layer 125 includes subjecting the donor half body wafer 120 to a subsequent implant material removal process such that the depth of the implant surface weakening layer 125 is throughout the donor semiconductor. As shown in Fig. 9A, the donor semiconductor crystal can be made = _grinding treatment or ion-assisted Wei Xue side ((10)). Material technology can locally control the amount of material removed by the grinding step = f muscle chemical mechanical grinding _), and t 3 : then: the entire exposed surface of f can also have non-uniform materials: or a variety of these or Other techniques 'cause the implanted table to show some slight changes in the ^^^ degree, as shown in Figure 3A, 4A, 4B' 4C and 1 other graphs. The material can be removed in a uniform or non-uniform manner. * The ion implantation step may be empty 20 201036112 曰 Referring to Figures 9B and 9C, the step of spatially changing may include using the mask 22〇a in a non-uniform manner on the donor semiconductor day 120 implant surface (2) When the ion beam 2〇2 scans the entire implant surface κι, the ion penetration is prevented to a different extent. The mask film 220 may include an organic polymer such as a photoresist such as a photoresist, and others. Possible gas accumulation techniques include enhanced chemical vapor deposition (PECVD) of the ionic body, spin coating, and polydimethyloxene (PDMS) stamping. The thickness of the mask film 22() may be less than or less than the desired depth, f. Since the depth of the implanted ions is branched in the month b of the incident ions, the masking of the masks will shift the spatial modulation of the depth of the main implant components in the Weishen semiconductor wafer 120. Depending on the length of the ion path, the length of the ion path can be increased to achieve the desired characteristics, 雠 ions to change the degree of orientation, or other phenomena. ', as shown by H 9D (showing the lower depth of all edges of the weakened layer j 25 and the higher depth towards the center), the donor body wafer 12G is raised enough to weaken after and during bonding to the substrate 1〇2 The layer 125 has a lower depth point, a side edge, and/or a secret. The temperature of the donor body wafer 12 进 is further advanced to continue to separate in the direction along the weakened layer 125 as a function of spatial variation from the lowest depth to the highest depth. Referring to Figures 10A-10D and 11, the spatially varying step can include drilling one or more blind holes 230 through the implant surface 121 at least to the weakened layer 125, preferably through the weakened layer 125 (Figure 10B). Without wishing to limit the invention in any theory of operation, it is believed that during or after bonding to substrate 1〇2 (Fig. 1〇C), the donor semiconductor wafer 120 is lifted to a higher temperature, before these locations are separated without these holes. Blind hole 2 (map) begins to separate. Drilling a 21 201036112 blind hole 230 array through the implant surface 121 as shown in Figure n can produce a non-uniform spatial distribution of the holes. Thus, the temperature of the donor semiconductor wafer 12 is raised to a level sufficient to begin and continue to separate in the direction along the weakened layer 125, from highest to lowest concentration, as a function of the distribution of the blind vias 230 array. Referring to FIGS. 12A-12B, the step of spatially changing may include subjecting the donor semiconductor wafer 120 to a non-uniform time-temperature quantitative profile such that the entire semiconductor wafer 120 passes through the various spatial locations of the weakened layer 125. The nucleation site density or dust force is spatially variable. For example, the temperature gradient shown in Figure 12 applies a higher temperature than the right to the left of wafer 12A. This temperature gradient can be applied in situ prior to bonding or during bonding to substrate 1〇2. Over time, if the processing time is maintained at a separation threshold below a certain processing temperature, at least the defective asa lion formation and the gas pressure there will increase throughout the wafer 120 over the entire wafer 120 in degrees of spatial variation throughout the weakened layer 125, Is a function of the temperature gradient (see Figure 12B). We hope that the separation gate insertion time for a specific treatment temperature follows the Arrhenius relationship, and the separation gate 疋 time 疋 is proportional to the reciprocal of the treatment temperature. The important parameters are the processing time at the processing temperature and the ratio of the separation gates. Any of the aforementioned spatially varying parameter magnitude curves discussed or required herein can be achieved by adjusting the process time-separation time ratio. Next, the temperature of the donor semiconductor wafer is raised sufficiently to begin separation from the point, edge, and/or maximum processing time of the weakened layer 125. In the example shown, the maximum processing time-to-separation time ratio is on the left side of the wafer 120. Next, the temperature of the donor semiconductor wafer 120 is further increased to be sufficient to continue the separation along the weakened layer 125, from the most A processing time _ separation time ratio to 22 201036112 rational time ratio, is the change time 'temperature quantity change curve Implantation, sputum production, and other factors, including ionic composition, dose and treatment time of ^, w, 'separation time ratio is about 0.9 and 0. Ο Ο % and take low processing time' The separation time ratio is between about G and 〇. 5 = using a variety of pre-bonding or in-situ bonding mechanisms to achieve spatial change, 'time-temperature variability _. For example, the donor semiconductor wafer (10) can be heated using one or more spaces </ RTI> convection convection or radiant heating techniques (heating plates, laser radiation, visible/infrared lamps, or the like). A controlled time/temperature ladder can be achieved by direct or indirect thermal contact (conduction) to achieve any desired f-variation profile. Two-dimensional array of heating plate components can be used to achieve different quantitative curves according to the test or program. For example, use a fast thermal annealed (light shot) lamp for local infrared light, and/or use visible or near-infrared laser radiation to provide local and spatial non-synchronous force u (Katsuda Shot). Alternatively, you can use spatially non-uniform cooling _, such as direct fine (feed), or sewn bulk flow jet (transfer W convection), using a uniform or non-uniform heat profile to achieve the desired time - Temperature gradient. Furthermore, these heating/cooling techniques can be used in advance bonding or in situ. The in-situ bonding technique is used together, and the bonding device is described, for example, in U.S. Patent No. 11/417,445, the disclosure of which is incorporated herein by reference. The bonding device can be used in the invention. The heat radiation loss management of the bonding device can be controlled, and the radiation loss and the edge temperature can be minimized by merging the infrared reflecting elements around the bonding device. Conversely, the bonding can be controlled 23 201036112 Thermal radiation loss management, by combining cooled infrared absorbers, maximizes radiation loss and minimizes edge temperature. A wide variety of variations of the above subject matter can be used to achieve the desired time-temperature gradient. 'Although the invention is specific to this The embodiments are described by way of example only to illustrate the principles of the invention and the application of the embodiments of the invention. And principle. 0 should only be limited to the following patent application scope [Brief Description of the drawings] In the drawings, " X "represents X- axis direction," Y "axis represents γ_. Figures 1A, 1B, 1C, and 1D are block diagrams showing prior art stripping processes. 2A-2B are block diagrams showing the stripping process in accordance with one or more of the present invention. Figure 3 is a top Q view of a donor semiconductor wafer having one or more spatially varying parameters of the associated weakened layer in accordance with one or more aspects of the present invention. Fig. 3A is a graph schematically showing a graph μ spatial variation parameter. 3Β·1 indicates the separation parameter. Fig. 3C is a graph schematically showing the spatial variation parameter of Fig. 3 as the depth of the weakened layer. 3C. 1 indicates the depth of implantation. 4A, 4A, and 4C are top views of respective donor semiconductor-wafers of one or more of the present invention having spatially varying parameters. Figures 5A, 5A, and 5C are diagrams of some ion implantation devices that can be used to achieve spatial variation parameters. In Fig. 5Α, dx/dt represents sweeping the cat; and άγ/ 24 201036112
Dt表示dY/dt掃瞄。 圖6A-6B顯示出離子植入技術，其被使用來在施體半導 ' 體晶片中達成晶核形成部位之空間變化密度。在圖6B中， • 6Β· 1表示晶核形成部位密度。 圖7A-7B顯示出離子植入技術，其被使用來在施體半導 體晶片中達成空間變化植入深度。在圖7B中，7B.1表示植 入深度。 0 圖7C一7D為曲線圖，其顯示出離子植入傾斜角度與植入 深度間之關係。在圖7C中，7C. 1表示扭轉=〇之模擬;7C. 2表 示扭轉=0之數據;7C. 3表示扭轉=23之模擬;7C. 4表示扭轉= 23之數據植。在圖7D中，7D· 1表示餘弦計算，以及7D. 2表示 數據。 圖8A-8B顯示出離子植入技術，其被使用來在施體半導 體晶片中達成空間變化離子分別寬度。在圖8B中，肌i表 示分佈寬度。 〇 ® 8C為曲線圖，其顯示出離子植入傾斜角度與分散間 之關係。在圖8C中，曲線8.丨相對於傾斜=±3度；曲線8. 2相 對於傾斜=±〇· 1度。 圖9A-9D顯不出其他離子植入技術，其被使用來在施體 半導體晶片中達成空間變化離子植入深度。 ffi 10A-10D及11顯示出另—離子植入技術，其被使用來 在施體半導體晶；i中達成缺陷部位之空_化分佈。 圖12A-12B顯不出時間—溫度量變曲線技術，其被使用 來在施體半導體晶片中達成空間變化參數量變曲線。在圖 25 201036112 12A中，12.1表示溫度梯度。 【主要元件符號說明】 ' 基板10;半導體晶片20;植入表面21;剝離層22;邊 緣22A,22B;結構24;基板102;施體半導體晶片120;植 入表面121;剝離層122;弱化層125;邊緣30A，130B，130C ，130D;滾筒200;離子束202;條帶射束204;遮罩薄膜220 ;盲孔230。Dt represents the dY/dt scan. Figures 6A-6B show ion implantation techniques used to achieve spatially varying density of nucleation sites in a donor semiconductor wafer. In Fig. 6B, • 6Β·1 indicates the density of crystal nucleation sites. Figures 7A-7B show ion implantation techniques used to achieve spatially varying implant depths in donor semiconductor wafers. In Fig. 7B, 7B.1 indicates the implantation depth. 0 Figures 7C-7D are graphs showing the relationship between ion implantation tilt angle and implant depth. In Fig. 7C, 7C. 1 represents a simulation of torsion = 〇; 7C. 2 represents data of torsion = 0; 7C. 3 represents a simulation of torsion = 23; and 7C. 4 represents a data of torsion = 23. In Fig. 7D, 7D·1 represents a cosine calculation, and 7D. 2 represents data. Figures 8A-8B show ion implantation techniques used to achieve spatially varying ion widths in a donor semiconductor wafer. In Fig. 8B, the muscle i represents the distribution width. 〇 ® 8C is a graph showing the relationship between ion implantation tilt angle and dispersion. In Fig. 8C, the curve 8. 丨 with respect to the inclination = ± 3 degrees; the curve 8.2 with respect to the inclination = ± 〇 · 1 degree. Figures 9A-9D illustrate other ion implantation techniques that are used to achieve spatially varying ion implantation depth in a donor semiconductor wafer. Ffi 10A-10D and 11 show an alternative ion implantation technique that is used to achieve a void-distribution of the defect sites in the donor semiconductor crystal; i. Figures 12A-12B show a time-temperature variability curve technique used to achieve a spatially varying parameter magnitude curve in a donor semiconductor wafer. In Figure 25 201036112 12A, 12.1 represents the temperature gradient. [Description of main component symbols] 'substrate 10; semiconductor wafer 20; implant surface 21; peeling layer 22; edges 22A, 22B; structure 24; substrate 102; donor semiconductor wafer 120; implant surface 121; peeling layer 122; Layer 125; edges 30A, 130B, 130C, 130D; drum 200; ion beam 202; strip beam 204; mask film 220; blind hole 230.
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