201036347 六、發明說明： 【發明所屬之技術領域】 本發明係指一種射頻收發器及其相關無線通訊装置，尤指—種 ’ 减精簡的元件達成射頻收發器工作模式之切換的射頻收發^及其 相關無線通訊裝置。 ' ^ 【先前技術】 無線發射器及接收器在無線通訊裝置中扮演重要的角色，而隨 . 著晶片技術的演進，無線發射器及接收器通常整合為一射頻收發 器，並以單晶片實現。當射頻收發器操作於發射器模式時，射頻收 發器產生射頻訊號，並透過天線將射頻訊號傳送至空中；當射頻收 發器操作於接收器模式時，射頻收發器將天線所接收的射頻訊號轉 〇 換為基頻訊號，供無線通訊裝置中的基頻處理器進行處理，以進一 步控制無線通訊裝置的運作。 請參考第1圖，第1圊為習知一無線通訊裝置1〇之功能方塊 圖。無線通訊裝置10包含有一天線100、一收發（T/R)開關102、 ^ 一基頻處理器⑴4、一射頻收發器100、匹配電路108、110及平衡 —不平衡變壓器（BaiunTransformer) 112及114。天線100用來傳 送及接收射頻訊號，收發開關1〇2耦接於天線1〇〇，用來切換射頻 4 201036347 訊號的傳送及接收路徑。基頻處理器104用來處理基頻訊號，以傳 送及接收基頻訊號。射頻收發器106耦接於基頻處理器1〇2、平衡 —不平衡變壓器112及114。射頻收發器106前端的主要元件係一 . 功率放大器116及一低雜訊放大器（LowNoiseAmplifier) ιι8，其 它元件如調變/解調器（Modulator / Demodulator)、升頻/降頻器 (Up/DownConverter)、混頻器（Mixer)及濾波器等為本領域具 通常知識者所熟知’在此不贅述，亦未繪於第1圖中。匹配電路1〇8 〇 及平衡一不平衡變壓器112為訊號傳送路徑上的元件，匹配電路11〇 及平衡一不平衡變壓器114為訊號接收路徑上的元件，用來實現阻 抗匹配以及差動訊號的平衡。 當射頻收發器106操作於發射器模式時，功率放大器116放大 待傳送的射頻訊號，並以差動方式輸出射頻訊號至平衡—不平衡變 壓器112 ;接著’射頻訊號依序經過平衡—不平衡變壓器112、匹配 電路108及收發開關1〇2，最後由天線1〇〇發射至空中。當射頻收 ° 發器106操作於接收器模式時，天線100自空中接收射頻訊號，已 接收之射頻訊號依序經過收發開關102、匹配電路no及平衡—不 平衡變壓器114 ’由平衡一不平衡變壓器114轉換為差動輸入之射 - 頻訊號，輸入至低雜訊放大器118。射頻收發器106具有優異的性 能及低插入損耗（Insertion Loss )’射頻收發器106與天線1 〇〇之間 的阻抗匹配也容易透過匹配電路108及110進行調整。然而，正因 為射頻收發器106必須與諸多外部元件配合使用，無線通訊裝置10 的元件及面積成本無法降低。 5 201036347 為了降低成本，習知技術提出另一射頻收發器，其係於射頻收 發器之aaJi内增關關以切換訊號的傳送及接收路徑，取代原本的 收發開關並減少外部元件。請參考第2圖，第2圖為習知―無線通 訊裝置20之功能方塊圖。無線通訊裝置2()包含有—天線2〇〇、一 基頻處理器202、一射頻收發器2〇4、一匹配電路206及一平衡一不 平衡變壓器208。除射頻收發器204之外，上述各元件的作用與無 線通訊裝置10中相同名稱的元件相同，在此不贅述。射頻收發器 204包含有一功率放大器21〇、一低雜訊放大器212及開關SW1〜 SW4。於射頻收發器2〇4操作於發射器模式時，開關SW1及SW2 導通且開關SW3及SW4關閉；此時’功率放大器21〇輸出差動輸 出訊號PA一OUT一P及PA—OUT一N至平衡一不平衡變壓器2〇8。於射 頻收發器204操作於接收器模式時，開關SW3及SW4導通且開關 SW1及SW2關閉；此時，平衡—不平衡變壓器2〇8傳送差動輸入 訊號LNAJN一P及LNAJN—N至低雜訊放大器212。 明參考第3圖，第3圖為苐2圖中功率放大器21〇及低雜訊放 大器212的示意圖。在第3圖中，功率放大器21〇係一疊接架構 (Cascade)的差動放大器，由is[型金氧半導體場效電晶體 (n-MOSFET ) MN1〜MN4組成。N型金氧半導體場效電晶體 及MN2形成一共閘極的差動對（Differential Pair)，N型金氧半導 體場效電晶體MN3及MN4形成一共源極的差動對。功率放大器 放大差動輸入訊號PA_IN_P&PA_IN一N，產生差動輸出訊號 6 201036347 PA_OUT_P及PA_OUT_N。低雜訊放大器212由N型金氧半導體場 效電晶體MN5及MN6組成，為一共源極的差動對。低雜訊放大器 212放大差動輸入訊號LNA—ΙΝ__Ρ及LNA_IN_N，產生差動輸出訊 號LNA-0UT一P及LNA-〇UT—N。功率放大器210及低雜訊放大器 212的洋細運作為本領域具通常知識者所熟知，在此不贅述。 由上可知，相#父於無線通訊裝置1〇 ,無線通訊裝置2〇節省了 0 一收發開關、一匹配電路及一平衡一不平衡變壓器。換言之，使用 第2圖之射頻收發$ 2〇4可較使用第i圖之射頻收發$ 1〇6節省更 多的外部元件。然而，以射頻收發器的觀點而言，射頻收發器綱 比射頻收發器106多了開關元件，成本較高。以目前的趨勢而言， 各種無線通置如無線區域網路卡或無線區域網路存取器，在設 計上已朝向低成本及小型化發展。因此，設計一低成本，同時亦^ 協助蕪線通訊裝置降低其成本的射敝發器晶片，實為—大挑戰。 〇 【發明内容】 因此，本發明之主要目的即在於提供一種射頻收發器及其相關 無線通訊裝置。 本發明係揭露-種射頻收發器，包含有—調變器、—升頻器、 -降頻器、-解調Θ、-功率放Ail及—低雜訊放大器。該調變器 用來調變-基頻處理器所產生的一待傳送之基頻訊號，以產生—待 201036347 傳送之射頻訊號。該升瓶 射頻訊號賴。鱗娜，_升該待傳送之 該解_接於該_ ^ ^降-·之射頻訊號的頻率。 Ο °用來解調該已接收之射頻訊號解調，以 ί待處理之基頻訊號。該功率放大器输於該升頻器及-基頻 :理器，用來放大該待傳送之射頻訊號，其包含有—第—差動對， 二控於該基頻處理n所產生之—開關峨，糾控繼射頻收發器 插作於-麵發射賴式或—射雜㈣模式丨以及—第二差動 對’雛於該第-差動對，形成—第—節點及—第二節點。該低雜 訊放大器减於該_狀該轉放大器，用來放大該已接收之射 頻。fl號’其包含有-第三差鱗，該紅差動_接於 及該第二節點。 p“ 本發明另揭露-種無線通訊裝置，包含有—天線、—基頻處理 器及-射銳發ϋ。該天線絲傳送及魏義職，該基頻處理 〇器用來輸出-待傳送之基頻訊號，接收—待處理之基頻訊號，以及 產生一開關訊號。該射頻收發器包含有一調變器、一升頻器、一降 頻益、-解調器…功率放大ϋ及—低雜訊放大器。該調變器用來 將該待傳送之基舰號調變絲-待傳送之賴訊號。該升頻器搞 • 接於該調魏’用來調升該待傳送之射頻訊號的頻率^該降頻器用 - 來調降一已接收之射頻訊號的頻率。該解調器耦接於該降頻器，用 來將垓已接收之射頻訊號解調成為該待處理之基頻訊號。該功率放 大器耦接於該升頻器，用來放大該待傳送之射頻訊號，包含有一第 差動對’受控於該開關域’扣控制姉敝發器操作於一射 8 201036347 頻發射器模式或一射頻接收器模式；以及一第二差動對，耗接於該 第一差動對，形成一第一節點及一第二節點。該低雜訊放大器耦接 於該降頻器，用來放大該已接收之射頻訊號，包含有一第三差動對， 該第三差動對耦接於該第一節點及該第二節點。 【實施方式】 明參考第4圖，第4圖為本發明實施例一射頻收發器4〇之功能 方塊圖。射頻收發器40用於一無線通訊裝置中，通常以一晶片實 現無線通訊裝置中其它元件尚有天線，匹配電路及基頻處理器等， 為求簡/糸，於第4圖中僅鳍·出一基頻處理器42。射頻收發器4〇整 合了發射器及接收器的功能，包含有一調變器4〇〇、一升頻器4〇2、 力率放大器404、-低雜訊放大器4〇6、-降頻器408及-解調器 410。 在射頻收發H 40之發射器的電路中，調變器4〇〇織於基頻處 理器42，用來調變基健理器42職生之—欲傳送之基頻訊號調 變’以產生-待傳送之射頻訊號；升頻器4〇2_於調變器彻， 用來調升待傳送之射頻訊號的頻率；功率放大器姻係一疊接架構 (ascade)的差賊大||，触料鋪搬，絲放大待傳送之 射頻訊號。在射頻收發器4〇之接收器的電路中，低雜訊放大器傷 _於功率放大器姻，用來放大經由功率放大器4G4所接收之射 頻訊號·，降頻器408婦於低雜訊放大器條，用來調降已接收之 9 201036347 射頻Λ號的頻率，解調器410輕接於降頻器408及基頻處理器42， 用來解調已接收之射頻訊號’以產生一待處理之基頻訊號，輸出至 基頻處理器42。 凊注思，功率放大器404另耦接於基頻處理器42，受基頻處理 器42所產生之一開關訊號SC1控制，以切換射頻收發器4〇的工作 模式；因此，低雜訊放大器406能夠透過功率放大器4〇4接收射頻 〇 訊號。上述特徵為本發明與習知射頻收發器最主要的不同之處，於 後詳述。請參考第5圖，第5圖為第4圖中功率放大器綱及低雜 訊放大ϋ 406之示意圖，其中亦描述了射頻收發器4〇與外部電路元 件的關係。於第5圖巾，功率放大器雛於_平衡—不平衡變 壓态500 ’平衡—不平衡變壓器5〇〇用來實現阻抗匹配及差動訊號 的平衡。 功率放大器404由Ν型金氧半導體場效電晶體ΜΝ1〜ΜΝ4組 成’Ν型金氧半導體場效電晶體贿及丽2形成—共閘極的差動 對（Differential Pair)DPl ’Ν型金氧半導體場效電晶體顧3 及MN4 瓜成共源極的差動對DP2。N型金氧半導體場效電晶體顧！及 • 丽2^難冑輸於基贼理ϋ 42，祕贼㈣42所產生之開 關Λ號SCI所控制型金氧半導體場效電晶體應^及顧2的没 極刀別為功率放大器4〇4之一正輸出端及一負輸出端，麵接於平衡 不平衡變壓，輸出差動輸出訊號ρΑ—〇υτ—p及 _ UT一Ν Ν型金氧半導體場效電晶體及麵2的源極分別 201036347 麵接於N型金氧半導體場效電晶體MN3及MN4躲極，此二轉接 點刀別以節點N1及節點N2表示。換言之，差麟DP1與差動對 DP2分別麵接於節點N1及節點N2。N型金氧半導體場效電晶體 _3及MN4的難分別為功率放大器彻之_正輸入端及一負輸 入％刀別接收差動輸入訊號及PA n。N塑金氧半導 體場效電晶體_3及MN4的雜於一地端。 低雜訊放大H .由N型金氧轉體場效電㈣丽5及函6201036347 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a radio frequency transceiver and related wireless communication device, and more particularly, to a 'reduced and reduced component to achieve radio frequency transceiver for switching the operation mode of the radio frequency transceiver ^ and Its associated wireless communication device. ' ^ [Prior Art] Wireless transmitters and receivers play an important role in wireless communication devices. With the evolution of wafer technology, wireless transmitters and receivers are usually integrated into a single RF transceiver and implemented as a single chip. . When the RF transceiver operates in the transmitter mode, the RF transceiver generates an RF signal and transmits the RF signal to the air through the antenna; when the RF transceiver operates in the receiver mode, the RF transceiver turns the RF signal received by the antenna The 〇 is replaced by a baseband signal for processing by a baseband processor in the wireless communication device to further control the operation of the wireless communication device. Please refer to FIG. 1 , which is a functional block diagram of a conventional wireless communication device. The wireless communication device 10 includes an antenna 100, a transceiver (T/R) switch 102, a baseband processor (1) 4, a radio frequency transceiver 100, matching circuits 108, 110, and balun transformers 112 and 114. . The antenna 100 is used for transmitting and receiving RF signals, and the transceiver switch 1〇2 is coupled to the antenna 1〇〇 for switching the transmission and reception paths of the RF 4 201036347 signal. The baseband processor 104 is configured to process the baseband signal to transmit and receive the baseband signal. The RF transceiver 106 is coupled to the baseband processor 1 and 2, the baluns 112 and 114. The main components of the front end of the RF transceiver 106 are a power amplifier 116 and a low noise amplifier (LowNoiseAmplifier) ιι8, other components such as Modulator / Demodulator, up/down regulator (Up/DownConverter) ), Mixers, filters, etc. are well known to those of ordinary skill in the art and will not be described here nor in Figure 1. The matching circuit 1〇8〇 and the balun 112 are components on the signal transmission path, and the matching circuit 11〇 and the balun 114 are components on the signal receiving path for impedance matching and differential signals. balance. When the RF transceiver 106 is operating in the transmitter mode, the power amplifier 116 amplifies the RF signal to be transmitted, and outputs the RF signal to the balun 112 in a differential manner; then the RF signal sequentially passes through the balanced-unbalanced transformer. 112, the matching circuit 108 and the transceiver switch 1 〇 2, and finally transmitted by the antenna 1 至 into the air. When the RF transceiver 106 is operating in the receiver mode, the antenna 100 receives the RF signal from the air, and the received RF signal sequentially passes through the transceiver 102, the matching circuit no, and the balanced-unbalanced transformer 114' is balanced by an imbalance. Transformer 114 converts to a differential input shot-frequency signal that is input to low noise amplifier 118. The RF transceiver 106 has excellent performance and low insertion loss (Insertion Loss). The impedance matching between the RF transceiver 106 and the antenna 1 也 is also easily adjusted by the matching circuits 108 and 110. However, because the RF transceiver 106 must be used with a variety of external components, the component and area cost of the wireless communication device 10 cannot be reduced. 5 201036347 In order to reduce costs, the prior art proposes another RF transceiver that is connected to the aaJi of the RF transceiver to switch the transmission and reception paths of the signal, replacing the original transceiver switch and reducing external components. Please refer to FIG. 2, which is a functional block diagram of a conventional wireless communication device 20. The wireless communication device 2() includes an antenna 2A, a baseband processor 202, a radio frequency transceiver 2〇4, a matching circuit 206, and a balun 208. Except for the radio frequency transceiver 204, the functions of the above-mentioned components are the same as those of the wireless communication device 10, and will not be described herein. The RF transceiver 204 includes a power amplifier 21A, a low noise amplifier 212, and switches SW1 SWSW4. When the RF transceiver 2〇4 operates in the transmitter mode, the switches SW1 and SW2 are turned on and the switches SW3 and SW4 are turned off; at this time, the power amplifier 21 outputs the differential output signals PA_OUT-P and PA-OUT-N to Balance a balun 2〇8. When the RF transceiver 204 is operating in the receiver mode, the switches SW3 and SW4 are turned on and the switches SW1 and SW2 are turned off; at this time, the baluns 2〇8 transmit the differential input signals LNAJN-P and LNAJN-N to low-hybrid Amplifier 212. Referring to FIG. 3, FIG. 3 is a schematic diagram of the power amplifier 21A and the low noise amplifier 212 in FIG. In Fig. 3, the power amplifier 21 is a Cascade differential amplifier composed of is-type MOS transistors MN1 to MN4. The N-type MOSFET field-effect transistor and MN2 form a common pair of differential pairs, and the N-type MOS field-effect transistors MN3 and MN4 form a common source differential pair. The power amplifier amplifies the differential input signal PA_IN_P&PA_IN_N to generate a differential output signal 6 201036347 PA_OUT_P and PA_OUT_N. The low noise amplifier 212 is composed of N-type MOSFETs MN5 and MN6, and is a common source differential pair. The low noise amplifier 212 amplifies the differential input signals LNA_ΙΝ__Ρ and LNA_IN_N to generate differential output signals LNA-0UT-P and LNA-〇UT-N. The fine operation of the power amplifier 210 and the low noise amplifier 212 is well known to those of ordinary skill in the art and will not be described herein. As can be seen from the above, the phase #father in the wireless communication device 1 〇, the wireless communication device 2 〇 saves 0 transceiver switch, a matching circuit and a balanced unbalanced transformer. In other words, using the RF transceiver $2〇4 in Figure 2 can save more external components than using the RF transceiver $1〇6 in Figure i. However, from the viewpoint of the radio frequency transceiver, the radio frequency transceiver has more switching elements than the radio frequency transceiver 106, and the cost is high. In the current trend, various wireless devices such as wireless area network cards or wireless area network accessors have been designed to be low-cost and miniaturized. Therefore, it is a big challenge to design a low-cost transmitter chip that also assists the twisted-line communication device to reduce its cost. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a radio frequency transceiver and associated wireless communication device. The invention discloses a radio frequency transceiver comprising a modulator, an upconverter, a downconverter, a demodulation buffer, a power amplifier Ail and a low noise amplifier. The modulator is used to modulate a baseband signal to be transmitted generated by the baseband processor to generate an RF signal to be transmitted by 201036347. The bottle is RF signal. Fen Na, _ _ the frequency of the RF signal that is to be transmitted _ _ ^ ^ 降 -. Ο ° is used to demodulate the received RF signal demodulation to the baseband signal to be processed. The power amplifier is input to the up-converter and the baseband: the processor is configured to amplify the RF signal to be transmitted, and includes a first-differential pair, and the second control is generated by the fundamental frequency processing n.峨, the correcting and controlling the radio frequency transceiver is inserted into the -plane transmitting Lai or the -spray (four) mode and the second differential pair is in the first-differential pair to form the -th node and the second node . The low noise amplifier is subtracted from the sigma to amplify the received frequency. The fl number ' contains a - third difference scale, which is connected to the second node. The invention further discloses a wireless communication device comprising an antenna, a baseband processor and a sharp camera. The antenna wire is transmitted and Weiyi, the baseband processing device is used for outputting - to be transmitted. The baseband signal, the received-to-be-processed baseband signal, and the generation of a switching signal. The RF transceiver includes a modulator, an upconverter, a down-frequency, a demodulator, a power amplifier, and a low The noise amplifier is used to adjust the base number of the base to be transmitted to the signal to be transmitted. The upconverter is connected to the adjustment signal to adjust the RF signal to be transmitted. Frequency ^ The frequency reducer uses - to reduce the frequency of a received RF signal. The demodulator is coupled to the frequency reducer for demodulating the received RF signal into the to-be-processed baseband signal. The power amplifier is coupled to the up-converter for amplifying the RF signal to be transmitted, and includes a differential pair 'controlled by the switch domain' buckle control bursting device operating on a shot 8 201036347 frequency transmission Mode or a radio receiver mode; and a second differential The first differential pair is coupled to the first differential pair to form a first node and a second node. The low noise amplifier is coupled to the frequency converter for amplifying the received RF signal, including a third difference. The third differential pair is coupled to the first node and the second node. [Embodiment] Referring to FIG. 4, FIG. 4 is a functional block diagram of a radio frequency transceiver 4 according to an embodiment of the present invention. The radio frequency transceiver 40 is used in a wireless communication device, and usually uses a chip to implement other components in the wireless communication device, such as an antenna, a matching circuit, and a baseband processor. For the sake of simplicity and simplicity, only the fins in FIG. · A baseband processor 42. The RF transceiver 4〇 integrates the functions of the transmitter and the receiver, and includes a modulator 4〇〇, an upconverter 4〇2, a force rate amplifier 404, and a low noise signal. The amplifier 4〇6, the downconverter 408 and the demodulator 410. In the circuit of the transmitter of the radio frequency transceiver H40, the modulator 4 is woven on the baseband processor 42 for modulating the basic health The 42-bit student--transmitting the baseband signal modulation' to generate-to-transmit the RF signal; the up-converter 4〇 2_In the modulator, used to increase the frequency of the RF signal to be transmitted; the power amplifier is a singularity of the ascade; the contact is spread, and the RF signal to be transmitted is amplified. In the circuit of the receiver of the RF transceiver 4, the low noise amplifier is used to amplify the RF signal received by the power amplifier 4G4. The downconverter 408 is used in the low noise amplifier strip. For reducing the frequency of the received 9 201036347 RF nickname, the demodulator 410 is lightly connected to the downconverter 408 and the baseband processor 42 for demodulating the received RF signal 'to generate a pending The baseband signal is output to the baseband processor 42. The power amplifier 404 is coupled to the baseband processor 42 and controlled by a switching signal SC1 generated by the baseband processor 42 to switch the RF transceiver 4 The operating mode of the UI; therefore, the low noise amplifier 406 can receive the RF signal through the power amplifier 4〇4. The above features are the main differences between the present invention and conventional RF transceivers and will be described in detail later. Please refer to FIG. 5, which is a schematic diagram of the power amplifier and low noise amplifier 406 in FIG. 4, which also describes the relationship between the RF transceiver 4 and the external circuit components. In Figure 5, the power amplifier is in the _balance-unbalanced 500-state balun 5 〇〇 used to achieve impedance matching and balance of the differential signal. The power amplifier 404 is composed of a Ν-type MOS field effect transistor ΜΝ1~ΜΝ4. 'Ν-type MOS field effect transistor and bribe 2 are formed - a common pair of differential pair DPl 'Ν type gold oxygen The semiconductor field effect transistor Gu 3 and MN4 form a common source differential to DP2. N-type MOS field effect transistor Gu! And • Li 2^ difficult to lose to the base thief, the secret thief (four) 42 generated by the switch nickname SCI controlled type MOS field effect transistor should be ^ and Gu 2's No. 4 one positive output terminal and one negative output terminal, the surface is connected to the balanced unbalanced transformer, and the output differential output signals ρΑ-〇υτ-p and _ UT Ν Ν type MOS field effect transistor and surface 2 The source is respectively connected to the N-type MOS field effect transistors MN3 and MN4, and the two transfer points are represented by node N1 and node N2. In other words, the difference phase DP1 and the differential pair DP2 are respectively connected to the node N1 and the node N2. The difficulty of the N-type MOSFETs _3 and MN4 is that the power amplifier has a positive input and a negative input, and the differential input signal and PA n are received. N plastic oxy-oxide semiconductor field effect transistor _3 and MN4 are mixed at one end. Low noise amplification H. by N-type gold oxide body field power (four) Li 5 and letter 6
、、且成為-共源極的差動對肥。N型金氧半導體場效電晶體丽$ f MN6的閘極分別為低雜訊放Α|| 4%之_正輸人端及一負輸入 端’同時亦分聰接於節點N1及節點N2，接收差動輸入訊號 AJNJP及lna_IN_N。N型金氧半導體場效電晶體画5及丽6 的源極皆祕於地端，秘分勒低雜訊放大器之—正輸出端 及一負輪出端，輸出差動輸出訊號lnajdut_p及im_0UT_N。 依第4圖所示，功率放大器4〇4之差動輸人訊號pAiNp及— Μ夏N係升頻器4〇2所產生，低雜訊放大器.產生之差動輸出 一°’ AJXJT_P及LNA-OUT—Ν則輸出至降頻器4〇8。以實作而 升頻402與功率放大器4〇4之間或低雜訊放大器棚與降頻 I40!之間可能另包含有其它元件，如驗ϋ或混頻器 ，為本領域 /、通吊知識者所熟知，在此不贅述。 201036347 亦作為射頻收發器40之發射器模式及接收器模式的切換開關。當開 關訊號SCI位於一低電位，射頻收發器4〇操作於發射器模式，此 時差動對DPI及差動對DP2放大功率放大器404之差動輸入訊號 PAJ^-P及PAJN_N，產生差動輸出訊號PA_〇UTJP及 .。當開關訊號SCI位於一高電位，射頻收發器40操作 於接收器模式，此時差動對DPI作為開關並導通，差動對DP2不 導通，差動對DP3放大低雜訊放大器406之差動輸入訊號 〇 LNAJN__P及LNAJN_N，產生差動輸出訊號LNA_〇υτ_ρ及 LNA—〇UT_N。根據開關訊號SCI ’低雜訊放大器楊得以經由功 率放大器404接收射頻訊號。 請同時參考第3圖及第5 ® L步了解本發明之射頻收發 益與習知射頻收發器的不同處。在第3圖中，射頻收發器204除了 包3功率放大器21〇及低雜訊放大器212之外，另利用四個開關 ❹SW1〜SW4切換射雜發^的功模式，以合併訊義傳送及接收 路控’減少射頻收發器的外部元件。功率放大器210及低雜訊放大 盗212的電路不相互連接。在第5圖中，射頻收發器4〇利用功率放 大器404内部原有的N型金氧半導體場效電晶體MN1 及MN2作為 *射触發紅倾式的切綱關’沒有任觸外增加關關元件， _同樣麟讀峨的舰及概路彳t。因此，本發料僅幫助無線 通几裝置減少7C件及S積成本，骑亦降低了棚收發胃本身的成 本。 12 201036347 在此請注意，第5圖所示之功率放大器4〇4及低雜訊放大器4〇6 為本發明之一實施例，本領域具通常知識者當可據以作不同的變化 及修飾。舉例來說’請參考第6圖，第6圖為本發明實施例一射頻 收發器60之示意圖，其中僅繪出功率放大器及低雜訊放大器的部 分。射頻收發器60包含有第5圖之射頻收發器40所有的元件，同 時另包含有匹配電路600及602 ;匹配電路600耦接於N型金氧半 導體場效電晶體MN5之閘極與節點N1之間，而匹配電路6〇2耦接 〇 於N型金氧半導體場效電晶體_6之閘極與節點N2之間。匹配電 路600及602用來實現低雜訊放大器4〇6與外部線路的阻抗匹配， 提高低雜訊放大器406的效率。 此外’請參考第7圖’第7圖為本發明實施例一無線通訊裝置 70之功能方塊圖。無線通訊裝置7〇包含有一天線7〇〇、一基頻處理 器702、一射頻收發器704及一匹配電路706。天線700用來傳送及 接收射頻訊號，基頻處理器702耦接於射頻收發器704，用來輸出 〇 一待傳送之基頻訊號，接收射頻收發器704所輸出之一基頻訊號， 以及產生一開關訊號SC2以控制射頻收發器704之工作模式的切換 動作。匹配電路706耦接於天線7〇〇及射頻收發器704，用來實現 - 天線700及射頻收發器704之間的阻抗匹配。射頻收發器7〇4耦接 於天線700及基頻處理器7〇2，射頻收發器7〇4所包含的元件及運 作方式與第4圖中射頻收發器4〇相同，在此不贅述。簡言之，射頻 收發器704利用其中功率放大器原有的金氧半導體場效電晶 體，作為射頻收發器7〇4之工作模式的切換開關，進而合併訊號的 13 201036347 '接收路彳二因此，射頻收發器7〇4可幫助無線通訊裝置％降低 綜上麟，本發射歡發把低雜減大涵絲輸入端 接^力率放大器’同時姻基頻處理器產生開關訊號，控制功率 原有的電晶體作為射頻發器之卫作模式的切換開關。進一 V兒本剌不綱加額外的關元件即可完成射敝發器工作模 〇式的切換動作，不僅降低了射頻收發器的成本，亦可降低使用本發 明之射頻收發器之無線通訊裝置的成本。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均㈣化與修飾’皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 Ο 第1圖及第2圖為習知無線通訊裝置之功能方塊圖。 第3圖為第2圖中功率放大器及低雜訊放大器的示意圖。 第4圖為本發明實施例一射頻收發器之功能方塊圖。 、 第5圖為第4圖中功率放大器及低雜訊放大器之示意圖。 第6圖為本發明實施例一射頻收發器之功率放大器及低雜訊放大器 之示意圖。 第7圖為本發明實施例一無線通訊裝置之功能方塊圖。 14 106、204、40、704 108、110、206、600、602、706 〇 112、114、208、500 116、210、404 201036347 【主要元件符號說明】 10、20、60、70 100'200 > 700 102 104、202、42、702 118、212、406 400 402 408 410And become a common source of differential to fertilizer. The gate of the N-type MOS field effect transistor 丽 $ MN6 is low noise Α || 4% _ positive input terminal and one negative input terminal 'also connected to node N1 and node N2 Receive differential input signals AJNJP and lna_IN_N. N-type MOSFET field effect transistor picture 5 and 丽6 source are secret at the ground end, secret points low noise amplifier - positive output and a negative wheel output, output differential output signal lnajdut_p and im_0UT_N . According to Fig. 4, the differential input signal pAiNp of the power amplifier 4〇4 and the N夏N-type up-converter 4〇2 are generated, and the low noise amplifier produces a differential output of 1°' AJXJT_P and LNA. -OUT-Ν is output to the downconverter 4〇8. In practice, the up-conversion 402 and the power amplifier 4〇4 or between the low-noise amplifier shed and the down-conversion I40! may contain other components, such as verification or mixer, for the field/and The knowledge is well known and will not be described here. 201036347 also serves as a diverter switch for the transmitter mode and receiver mode of the radio frequency transceiver 40. When the switching signal SCI is at a low potential, the RF transceiver 4 is operated in the transmitter mode. At this time, the differential input signal PAJ^-P and PAJN_N of the differential pair DPI and the differential pair DP2 amplification power amplifier 404 generate a differential output. Signal PA_〇UTJP and . When the switching signal SCI is at a high potential, the RF transceiver 40 operates in the receiver mode, at which time the differential pair DPI acts as a switch and conducts, the differential pair DP2 does not conduct, and the differential pair DP3 amplifies the differential input of the low noise amplifier 406. The signals 〇LNAJN__P and LNAJN_N generate differential output signals LNA_〇υτ_ρ and LNA_〇UT_N. According to the switching signal SCI', the low noise amplifier Yang can receive the RF signal via the power amplifier 404. Please refer to Figure 3 and Step 5 ® L for the differences between the RF transceiver of the present invention and the conventional RF transceiver. In FIG. 3, in addition to the packet 3 power amplifier 21〇 and the low noise amplifier 212, the RF transceiver 204 uses four switches ❹SW1 SWSW4 to switch the power modes of the spurs to combine the semantic transmission and reception. The road control 'reduces the external components of the RF transceiver. The circuits of the power amplifier 210 and the low noise amplifier 212 are not connected to each other. In Fig. 5, the radio frequency transceiver 4 uses the original N-type MOSFETs MN1 and MN2 in the power amplifier 404 as the *shooting-red-dip-cutting switch. Closed components, _ the same as the ship and the road. Therefore, this issue only helps the wireless device to reduce the cost of 7C and S, and the ride also reduces the cost of the shed. 12 201036347 Please note that the power amplifier 4〇4 and the low noise amplifier 4〇6 shown in Figure 5 are an embodiment of the present invention, and those skilled in the art can make different changes and modifications. . For example, please refer to FIG. 6. FIG. 6 is a schematic diagram of a radio frequency transceiver 60 according to an embodiment of the present invention, in which only a portion of a power amplifier and a low noise amplifier are depicted. The RF transceiver 60 includes all the components of the RF transceiver 40 of FIG. 5, and further includes matching circuits 600 and 602. The matching circuit 600 is coupled to the gate and node N1 of the N-type MOS field effect transistor MN5. The matching circuit 6〇2 is coupled between the gate of the N-type MOSFET and the node N2. The matching circuits 600 and 602 are used to achieve impedance matching between the low noise amplifier 4〇6 and the external line, and improve the efficiency of the low noise amplifier 406. Further, 'Please refer to FIG. 7'. FIG. 7 is a functional block diagram of a wireless communication device 70 according to an embodiment of the present invention. The wireless communication device 7A includes an antenna 7A, a baseband processor 702, a radio frequency transceiver 704, and a matching circuit 706. The antenna 700 is configured to transmit and receive an RF signal. The baseband processor 702 is coupled to the RF transceiver 704 for outputting a baseband signal to be transmitted, receiving a baseband signal output by the RF transceiver 704, and generating A switching signal SC2 controls the switching operation of the operating mode of the radio frequency transceiver 704. The matching circuit 706 is coupled to the antenna 7 〇〇 and the RF transceiver 704 for implementing impedance matching between the antenna 700 and the RF transceiver 704. The RF transceiver 7〇4 is coupled to the antenna 700 and the baseband processor 7〇2. The components and operation modes of the RF transceiver 7〇4 are the same as those of the RF transceiver 4〇 in FIG. 4, and are not described herein. In short, the RF transceiver 704 utilizes the original MOSFET of the power amplifier as a switching switch for the operating mode of the RF transceiver 7〇4, and then combines the signals of the signal 13 201036347 'Receive the way two, therefore, The RF transceiver 7〇4 can help the wireless communication device to reduce the overall frequency of the upper arm. This launching is a low-subtractive large-supplement input terminal with a low-frequency input amplifier. The simultaneous-frequency processor generates a switching signal to control the power. The transistor acts as a switch for the mode of the RF transmitter. In addition, the V-switch can be used to complete the switching operation of the transmitter, which not only reduces the cost of the RF transceiver, but also reduces the wireless communication device using the RF transceiver of the present invention. the cost of. The above description is only the preferred embodiment of the present invention, and all the modifications and modifications made by the scope of the present invention should be within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and FIG. 2 are functional block diagrams of a conventional wireless communication device. Figure 3 is a schematic diagram of the power amplifier and low noise amplifier in Figure 2. FIG. 4 is a functional block diagram of a radio frequency transceiver according to an embodiment of the present invention. Figure 5 is a schematic diagram of the power amplifier and low noise amplifier in Figure 4. Figure 6 is a schematic diagram of a power amplifier and a low noise amplifier of a radio frequency transceiver according to an embodiment of the present invention. Figure 7 is a functional block diagram of a wireless communication device according to an embodiment of the present invention. 14 106, 204, 40, 704 108, 110, 206, 600, 602, 706 〇 112, 114, 208, 500 116, 210, 404 201036347 [Description of main component symbols] 10, 20, 60, 70 100'200 > 700 102 104, 202, 42, 702 118, 212, 406 400 402 408 410
Ο Nl ' N2 SW1 〜SW4 MN1-MN6 SCI 無線通訊裝置 天線 收發開關 基頻處理器 射頻收發器 匹配電路 平衡一不平衡變壓器 功率放大器 低雜訊放大器 調變器 升頻器 降頻器 解調器 節點 開關 N型金氧半導體場效電晶體 開關訊號 PA_IN_P、PA_IN_N、PA_OUT_P、PA OUT—N、LNA_IN_P LNA_IN_N、LNA_OUT_P、LNA_OUT_N 差動訊號 15Ο Nl ' N2 SW1 ~ SW4 MN1-MN6 SCI wireless communication device antenna transceiver switch baseband processor RF transceiver matching circuit balance a balun power amplifier low noise amplifier modulator upconverter frequency reducer demodulator node Switch N-type MOSFET field effect transistor switching signals PA_IN_P, PA_IN_N, PA_OUT_P, PA OUT-N, LNA_IN_P LNA_IN_N, LNA_OUT_P, LNA_OUT_N differential signal 15