TW201129727A - Wafer pretreatment for copper electroplating - Google Patents

Wafer pretreatment for copper electroplating

Info

Publication number
TW201129727A
TW201129727A TW099132878A TW99132878A TW201129727A TW 201129727 A TW201129727 A TW 201129727A TW 099132878 A TW099132878 A TW 099132878A TW 99132878 A TW99132878 A TW 99132878A TW 201129727 A TW201129727 A TW 201129727A
Authority
TW
Taiwan
Prior art keywords
copper electroplating
pretreatment
wafer pretreatment
wafer
trench
Prior art date
Application number
TW099132878A
Other languages
Chinese (zh)
Other versions
TWI499697B (en
Inventor
Chien-Hsun Lai
shao-min Yang
Tzu-Tsang Huang
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of TW201129727A publication Critical patent/TW201129727A/en
Application granted granted Critical
Publication of TWI499697B publication Critical patent/TWI499697B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention is directed to a pretreatment process for copper electroplating of via or trench features on a wafer, comprising filling the via or trench feature with a pretreatment solution, wherein the pretreatment solution comprises copper ions.
TW099132878A 2009-09-28 2010-09-28 Wafer pretreatment for copper plating TWI499697B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24616109P 2009-09-28 2009-09-28

Publications (2)

Publication Number Publication Date
TW201129727A true TW201129727A (en) 2011-09-01
TWI499697B TWI499697B (en) 2015-09-11

Family

ID=43638715

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099132878A TWI499697B (en) 2009-09-28 2010-09-28 Wafer pretreatment for copper plating

Country Status (5)

Country Link
US (1) US20120175264A1 (en)
EP (1) EP2483456A2 (en)
KR (1) KR20120100947A (en)
TW (1) TWI499697B (en)
WO (1) WO2011036158A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10214826B2 (en) * 2013-01-29 2019-02-26 Novellus Systems, Inc. Low copper electroplating solutions for fill and defect control
US9598787B2 (en) * 2013-03-14 2017-03-21 Rohm And Haas Electronic Materials Llc Method of filling through-holes
US20140299476A1 (en) * 2013-04-09 2014-10-09 Ebara Corporation Electroplating method
CN104762643A (en) * 2014-12-17 2015-07-08 安捷利电子科技（苏州）有限公司 Copper plating solution capable of realizing co-plating of through hole, blind hole and circuit
US10512174B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
US10508357B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
WO2019199614A1 (en) 2018-04-09 2019-10-17 Lam Research Corporation Copper electrofill on non-copper liner layers
TWI895334B (en) * 2020-02-06 2025-09-01 日商東京威力科創股份有限公司 Coating treatment method and coating treatment device
CN114507886A (en) * 2022-03-29 2022-05-17 四会富仕电子科技股份有限公司 Hole-filling electroplating method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770598A (en) 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US5058799A (en) * 1986-07-24 1991-10-22 Zsamboky Kalman F Metallized ceramic substrate and method therefor
US5340947A (en) * 1992-06-22 1994-08-23 Cirqon Technologies Corporation Ceramic substrates with highly conductive metal vias
JP4394234B2 (en) 2000-01-20 2010-01-06 日鉱金属株式会社 Copper electroplating solution and copper electroplating method
US6491806B1 (en) 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
WO2004107422A2 (en) * 2003-05-27 2004-12-09 Ebara Corporation Plating apparatus and plating method
US7064068B2 (en) * 2004-01-23 2006-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method to improve planarity of electroplated copper
US7989347B2 (en) * 2006-03-30 2011-08-02 Freescale Semiconductor, Inc. Process for filling recessed features in a dielectric substrate
US7575666B2 (en) 2006-04-05 2009-08-18 James Watkowski Process for electrolytically plating copper
JP4822519B2 (en) 2006-06-26 2011-11-24 Ｊｘ日鉱日石金属株式会社 Semiconductor wafer pretreatment agent and pretreatment method
US20090020434A1 (en) * 2007-07-02 2009-01-22 Akira Susaki Substrate processing method and substrate processing apparatus

Also Published As

Publication number Publication date
WO2011036158A2 (en) 2011-03-31
EP2483456A2 (en) 2012-08-08
TWI499697B (en) 2015-09-11
US20120175264A1 (en) 2012-07-12
KR20120100947A (en) 2012-09-12
WO2011036158A3 (en) 2011-06-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees