TW201213112A - Metal-clad-laminated board and method for producing the same - Google Patents
Metal-clad-laminated board and method for producing the same Download PDFInfo
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- TW201213112A TW201213112A TW100129155A TW100129155A TW201213112A TW 201213112 A TW201213112 A TW 201213112A TW 100129155 A TW100129155 A TW 100129155A TW 100129155 A TW100129155 A TW 100129155A TW 201213112 A TW201213112 A TW 201213112A
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- Prior art keywords
- resin
- prepreg
- metal
- layer
- resin layer
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- 239000000178 monomer Substances 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 125000005609 naphthenate group Chemical group 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
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- 229930195143 oxyphenol Natural products 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- FTDXCHCAMNRNNY-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1 FTDXCHCAMNRNNY-UHFFFAOYSA-N 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
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- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
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- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- SUBJHSREKVAVAR-UHFFFAOYSA-N sodium;methanol;methanolate Chemical compound [Na+].OC.[O-]C SUBJHSREKVAVAR-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 1
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- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004291 sulphur dioxide Substances 0.000 description 1
- 235000010269 sulphur dioxide Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- DMEUUKUNSVFYAA-UHFFFAOYSA-N trinaphthalen-1-ylphosphane Chemical compound C1=CC=C2C(P(C=3C4=CC=CC=C4C=CC=3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 DMEUUKUNSVFYAA-UHFFFAOYSA-N 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/08—Impregnating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J177/00—Adhesives based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Adhesives based on derivatives of such polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Reinforced Plastic Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
201213112 六、發明說明: 【發明所屬之技術領域】 本發明係關於金屬包層積層板及其製造方法。 【先前技術】 近年來’已知有具備了包含氰酸酯樹脂之預浸體的貼銅積 層板。於專利文獻1中,記載著以樹脂組成物整體為基準, 而包含酚醛清漆型氰酸酯樹脂或雙酚A型氰酸酯樹脂 20〜40重量%、二氧化矽40〜70重量%、聯苯基二亞甲基型 環氧樹脂2〜40重量%之樹脂組成物,並將該樹脂組成物含 浸於基材中而得到的貼銅積層板用預浸體。在專利文獻i 中,將此貼銅積層板用預浸體予以硬化所獲得之硬化物在厚 度方向的膨脹率(αΐ)設為12ppm/°C以上且24ppm/°C以下, 藉此可獲得耐熱性、連接可靠性及難燃性優異之貼銅積層 板。又’因為將無機填充材設定在特定含有量,故特別可以 進行低吸水化。 [專利文獻1]日本專利特開2003-268136號公報 【發明内容】 (發明所欲解決之問題) 然而,於專利文獻1的技術中,關於銅箔與預浸體之密 黏性部分,尚有進一步改善的空間。此外,作為將細微佈線 電路予以形成之方法,亦於半加成製程中之鍍銅密黏性方面 特別會有問題。因此,要求低熱膨脹、低反翹及可形成細微 100129155 4 201213112 佈線電路且可靠性優越之貼銅積層板。 本發明係有鑑於上述情事而完成者,其目的係在於提供一 。種使包含級目旨_㈣魏性成分料職成分之預浸 ,體與㈣、賴等金屬層的接純得以提升之金屬包層積層 板。 (解決問題之手段) 若根據本發明,射提供—種金屬包層制板,其係具有: 將含有熱硬化性成分與無機填充材作為必要成分之樹脂 組成物⑴於基材上含浸至少—層以上而成的預浸體; 於上述預浸體之兩面或單面上所積層的金屬羯;及 膜厚較上述預浸體之臈厚為薄,介隔存在於上述預浸體與 ^金屬fl之間,以使上述預浸體與上述金屬ϋ密黏的基底 树脂層。 、f人居右根據本㉜明’則可提供—種印刷佈線板,其係由上 述金屬包層積層板所加工而成。 卜提供料導岐置’⑽將半導體元件安裝在上 述I7刷佈線板上而成。 ,若根據本發明,财提供—種金屬包層積層板之製 L直古’其係包含使金屬辖積層於將含有熱硬化性成分與無 '㈣之樹㈣成物⑴於基材上含浸至少 -層以上而成的預浸體之兩面或單面上的步驟, 、旱車乂上述預,又體之膜厚為薄之基底樹脂層介隔存在 100129155 201213112 於上述預浸體與上述金屬之間,經由上述基底樹脂層使上 述預浸體與上述金屬羯密黏。 若根據本發明,使較薄的基底樹脂層介隔存在於含有熱硬 化性成分與無機填充材作為必要成分之預浸體與金屬箔之 間,可使預浸體與金屬箔密黏。因此,於將金屬箔蝕刻以進 行佈線加工,或者是對預浸體進行金屬鍍敷處理等半導體裝 置之製造製程方面,會使對於預浸體表面之金屬的接黏力降 低之疑慮消失’並可使預浸體與金屬層強力黏合成為可能。 (發明效果) 若根據本發明’則可以提供一種使含有熱硬化性成分與無 機填充材作為必要成分之預浸體與金屬结之接黏性提升的 金屬包層積層板。 【實施方式】 以下,針對本發明之實施形態,使用圖式進行說明。另外, 於所有圖式中,對於相同的構成元件會賦予相同的元件符 號,並適當省略說明。 (第一實施形態) 圖1係示意性表示本實施形態之金屬包層積層板1 (加熱 硬化前之附有金屬箔之預浸體的元件符號係以la表示)的剖 面圖。本實施形態之金屬包層積層板1係具有:將含有熱硬 化性成分與無機填充材作為必要成分之樹脂組成物(I)於纖 維基材14上含浸至少一層以上而成的預浸體η ;於預浸體 100129155 6 201213112 11之兩面上所積層的金屬箱13;及膜厚較預浸體11之膜厚 為薄,介隔存在於預浸體u與金屬箱13之間,以使預浸體 .. 11與金屬箔13密黏的基底樹脂層12。 , 。又’較佳的是於3〇°C、1Hz下所測量之基底樹脂層12的 彈性模數叫為lGPa以上且5GPa以下。另外,在本案說明 書中,所謂彈性模數係指使用DMA裝置(Dynamic :chanical Analyzer(動態機械分析儀),τα ι她咖_公司 製,製品名:Q800),並於溫度3〇χ:、頻率lHz下所測量之 儲存彈性模數。 又,在本實施形態中,硬化後之預浸體u的厚度係可設 為20/xm以上且ΐ5〇μΐη以下。 以下’針對各構成進行說明。 <附有基底樹脂層之金屬箔2> 基底樹脂層12係可由至少含有芳香族聚醯胺樹脂與熱硬 化性樹脂與填充粒子之樹脂組成物(11)而形成。此時,關於 基底樹脂層12’以不含具有一級胺基之化合物及具有二級 胺基之化合物為佳。 •i 首先’針對芳香族聚醯胺樹脂進行說明。此處所謂「芳香 族聚醯胺樹脂」(aromatic polyamide resin)係指包含使芳香族 聚酿胺樹脂與橡膠成分進行反應而獲得者,具體而言,可依 下述式(1)表示。 [化1] 100129155 7 201213112201213112 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a metal clad laminate and a method of manufacturing the same. [Prior Art] In recent years, a copper-clad laminate having a prepreg containing a cyanate resin has been known. Patent Document 1 discloses that a novolak-type cyanate resin or a bisphenol A-type cyanate resin is contained in an amount of 20 to 40% by weight, and cerium oxide is 40 to 70% by weight based on the entire resin composition. A prepreg for a copper-clad laminate obtained by impregnating a resin composition with a resin composition of 2 to 40% by weight of a phenyl dimethylene type epoxy resin. In Patent Document i, the expansion ratio (αΐ) of the cured product obtained by curing the copper-clad laminate with a prepreg in the thickness direction is 12 ppm/° C. or more and 24 ppm/° C. or less. Copper-clad laminate with excellent heat resistance, connection reliability and flame retardancy. Further, since the inorganic filler is set to a specific content, it is particularly possible to reduce the water absorption. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-268136 (Draft of the Invention) (Problems to be Solved by the Invention) However, in the technique of Patent Document 1, the adhesive portion of the copper foil and the prepreg is still There is room for further improvement. Further, as a method of forming a fine wiring circuit, there is particularly a problem in terms of copper plating adhesion in a semi-additive process. Therefore, low thermal expansion, low anti-warping, and a copper-clad laminate which can form a fine 100129155 4 201213112 wiring circuit and have excellent reliability are required. The present invention has been made in view of the above circumstances, and its object is to provide one. A metal clad laminate which is improved in the purity of the prepreg, the body, and the metal layer of the (IV) and Lai materials. (Means for Solving the Problem) According to the present invention, the present invention provides a metal clad sheet which has a resin composition (1) containing a thermosetting component and an inorganic filler as essential components on the substrate at least - a prepreg formed of a layer or more; a metal crucible laminated on both sides or a single surface of the prepreg; and a film thickness thinner than a thickness of the prepreg, and a spacer existing in the prepreg and the Between the metals fl, a base resin layer in which the prepreg is adhered to the metal crucible. According to the present invention, a printed wiring board can be provided, which is processed by the above-mentioned metal clad laminate. The material supply device is mounted on the I7 brush wiring board. According to the present invention, the invention provides a metal clad laminate which is made of a metal layer which is impregnated with a substrate containing a thermosetting component and a tree (4) without (a) a step of two or a single surface of the prepreg formed of at least one layer or more, and a base resin layer having a thin film thickness of the above-mentioned pre-preg, and having a thickness of 100129155 201213112 in the prepreg and the metal The prepreg is adhered to the metal crucible via the base resin layer. According to the present invention, the prepreg is adhered to the metal foil by allowing the thin base resin layer to be interposed between the prepreg containing the thermosetting component and the inorganic filler as essential components and the metal foil. Therefore, in the process of manufacturing a semiconductor device such as etching a metal foil or performing a metal plating treatment on a prepreg, the problem of lowering the adhesion of the metal on the surface of the prepreg disappears. It is possible to strongly bond the prepreg with the metal layer. (Effect of the Invention) According to the present invention, it is possible to provide a metal clad laminate in which the adhesion between the prepreg containing the thermosetting component and the inorganic filler as an essential component and the metal bond is improved. [Embodiment] Hereinafter, embodiments of the present invention will be described using a drawing. In the drawings, the same component elements are denoted by the same reference numerals, and the description is omitted as appropriate. (First Embodiment) Fig. 1 is a cross-sectional view schematically showing a metal clad laminate 1 of the present embodiment (a symbol of a prepreg with a metal foil before heat curing is indicated by la). The metal clad laminate 1 of the present embodiment has a prepreg η obtained by impregnating the fiber base material 14 with at least one layer of the resin composition (I) containing the thermosetting component and the inorganic filler as essential components. a metal case 13 laminated on both sides of the prepreg 100129155 6 201213112 11; and a film thickness thinner than the prepreg 11 is present between the prepreg u and the metal case 13 so that Prepreg: 11 A base resin layer 12 which is adhered to the metal foil 13. , . Further, it is preferable that the elastic modulus of the base resin layer 12 measured at 3 ° C and 1 Hz is 1 gPa or more and 5 GPa or less. In addition, in the present specification, the term "modulus of elasticity" means using a DMA device (Dynamic: mechanical analyzer, τα ι she coffee company, product name: Q800), and at a temperature of 3 〇χ: The storage elastic modulus measured at a frequency of 1 Hz. Further, in the present embodiment, the thickness of the prepreg u after curing can be set to 20/xm or more and ΐ5〇μΐη or less. Hereinafter, each configuration will be described. <Metal foil 2 with a base resin layer> The base resin layer 12 can be formed of a resin composition (11) containing at least an aromatic polyamide resin and a thermosetting resin and filler particles. At this time, it is preferred that the base resin layer 12' is a compound containing no compound having a primary amino group and a compound having a secondary amino group. • i First 'Description of aromatic polyamide resin. The "aromatic polyamide resin" (Aromatic Polyamide) is obtained by reacting an aromatic polyamine resin with a rubber component, and specifically, it can be represented by the following formula (1). [Chemical 1] 100129155 7 201213112
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Art ΗΝ Η _ΑΓ2 〜Ν S--χ· m ⑴ 一般式(1)中,m係表示重覆單位數,為50〜5,000之整數。Art ΗΝ Η _ΑΓ2 Ν Ν S--χ· m (1) In the general formula (1), m represents the number of repeated units and is an integer of 50 to 5,000.
Ar!、An係表示二價芳香族基,可為相同亦可為相異。X係 表示具有橡膠成分之鏈段的基。 作為與此芳香族聚醯胺樹脂進行反應之橡膠成分,可為天 然橡膠及合成橡膠之任一者,亦可為改質橡膠或未改質橡 膠。作為合成橡膠’並沒有特別限定,可列舉有丙稀腈丁二 烯橡膠(acrylonitrile-butadiene rubber,NBR)、丙稀酸系橡膠 (acrylic rubber)、聚 丁二稀(p〇iybutadiene)、異戊二稀 (isoprene)、羧酸改質 NBR(NBR modified by addition of carboxylic acid)、氫轉化型聚 丁二烯(hydrogenated polybutadiene)、環氧改質聚 丁二烯(p〇iybutadiene by epoxidation)等。又’為了提高與聚醯胺醯亞胺之相溶性, 可使用經減改質或環氧改質者,或為了防止熱劣化而可使 用氫轉化型之合成橡膠等,但更佳的是使用NBR及聚二 烯。此外,以具有酚性羥基之芳香族聚醯胺樹脂為再更俨。 藉此,則除了柔敕性之外,與熱硬化性樹脂之相溶性亦優 越。例如,如下述式(2)所表示。 令,、 [化2] 100129155 201213112The Ar! and An lines represent divalent aromatic groups, which may be the same or different. The X system represents a group having a segment of a rubber component. The rubber component which reacts with the aromatic polyamide resin may be either natural rubber or synthetic rubber, and may be a modified rubber or an unmodified rubber. The synthetic rubber 'is not particularly limited, and examples thereof include acrylonitrile-butadiene rubber (NBR), acrylic rubber, polypyrene (p〇iybutadiene), and isoprene. Isoprene, NBR modified by addition of carboxylic acid, hydrogenated polybutadiene, p〇iybutadiene by epoxidation, and the like. Further, in order to improve compatibility with polyamidoximine, it is possible to use a modified or epoxy-modified one, or a hydrogen-converted synthetic rubber to prevent thermal deterioration, but it is more preferable to use NBR and polydiene. Further, an aromatic polyamine resin having a phenolic hydroxyl group is further improved. Thereby, in addition to the softness, the compatibility with the thermosetting resin is also excellent. For example, it is represented by the following formula (2). Order, [Chemical 2] 100129155 201213112
OH ⑵ 一般式(2)中,m、n係表示重覆單位數,為50〜5,〇〇〇之整 數。Aq、Ar2係表示二價芳香族基,可為相同亦可為相異。 X係表示具有橡膠成分之鏈段的基。 芳香族聚醯胺樹脂與橡膠成分係以採用所謂的芳香族聚 醯胺樹脂30重量%以上且85重量%以下,而剩餘部分為橡 膠成分之配合為佳。 芳香族聚醯胺樹脂係在將樹脂組成物(II)設為1 〇〇重量份 時,較佳為使用5重量份以上且75重量份以下之配合比例, 更佳為使用20重量份以上且50重量份以下。 作為熱硬化性樹脂,可列舉有環氧樹脂(ep0Xyresins)、氰 酸酉日树月日(cyanate resins)、不飽和聚g旨樹脂(Unsaturated polyester resins)、本并環丁稀樹脂(benzoCyCi〇butene resins) 及雙順丁稀一醯亞胺三^bismaleimide triazine resins)。較 佳為使用環氧樹脂、氰酸酯樹脂’更佳為組合環氧樹脂與氰 酸酯樹脂而使用。 熱硬化性樹脂係當將樹脂組成物(11)設為1〇〇重量份時, 可使用5重1份以上且75重量份以下之配合比例。環氧樹 脂與氛酸醋樹脂之配合比例係以5重量份以上且75重量份 以下為佳。作為環氧樹脂’可以使用聯苯基型環氧樹脂 100129155 9 201213112 (biphenyl type epoxy resin)、雙酚型環氧樹脂(bisphenol type epoxy resin)、二苯乙烯型環氧樹脂(stilbene type epoxy resin)、紛紛酿清漆型環氧樹脂(phenol novolac type epoxy resin)、甲苯酚酚醛清漆型環氧樹脂(cres〇l novolac type epoxy resin)、三酚曱烷型環氧樹脂(triphenolmethane type epoxy resin)、烷基改質三酚甲烷型環氧樹脂(aikyl-modified triphenolmethane type epoxy resin)、含三畊核之環氧樹脂 (epoxy resin containing a triazine uncleus)、二環戊二烯型環 氧樹脂(dicyclopentadiene type epoxy resin)、酚芳烷基型環 氧樹脂(phenolaralkyl type epoxy resin)、酚聯苯基芳烷基型 環氧樹月旨(phenolbiphenylaralkyl type epoxy resin)、萘改質盼 酚醛清漆型環氧樹脂(naphthalene modified phenolic novolac type epoxy resin)等《該等環氧樹脂係可使用一種或混合兩 種以上使用。該等之中,就低吸水、鍍敷高密黏性及耐熱性 之觀點而言,尤其以雙酚型環氧樹脂、二環戊二烯型環氧樹 脂、酚芳烷基型環氧樹脂、酚聯苯基芳烷基型環氧樹脂、萘 改質酚酚醛清漆型環氧樹脂為佳。作為氰酸酯樹脂,較佳的 是芳香族氰酸酯樹脂,具體而言’可列舉有酚酚醛清漆型 (phenol novolac type)、甲苯酚酚醛清漆型(cresol n〇v〇iac type)等酚醛清漆型氰酸酯樹脂;笨基芳烷基型氰酸酯樹脂 (phenylaralkyl type cyanate resin);聯苯基芳烷基型氰酸酯樹 脂(biphenylaralkyl type cyanate resin);伸萘基芳烷基型氰酸 100129155 10 201213112 酯樹脂(naphthalenearalkyl type cyanate resin);雙盼 A 型 (bisphenol A type)、雙盼 E S(bisphenol E type)、四甲基雙 驗F型(tetramethyl bisphenol F type)等雙盼型氰酸酯樹脂 等。該等之中,以酚醛清漆型氰酸酯樹脂為佳。 作為硬化劑,例如可列舉有苄基二曱基胺 (benzyldimethylamine,BDMA)、2,4,6-卷(二曱基胺基曱基) 盼(2,4,6-tris(dimethylaminomethyl)phenol,DMP-30)等三級 胺化合物;2-曱基咪唾(2-methylimidazole)、2-乙基-4-曱基 咪0坐(2-ethyl-4-methylimidazole,EMI24)、2-苯基-4-甲基口米0坐 (4-methyl-2-phenylimidazole, 2P4MZ)、2-苯基咪 〇坐 (2-phenylimidazole, 2PZ)、2-苯基-4-曱基-5-氫0米0坐 (2-phenyl-4-methyl-5-hydroxyimidazole, 2P4MHZ)等咪0坐化 合物;BF3錯合體(boron trifluoride complex)等路易斯酸等觸 媒型硬化劑。 又,例如二伸乙基四胺(diethylenetriamine,DETA)、三伸 乙基四胺(triethylenetetramine,TETA)、甲基苯二甲基二胺 (m-xylylenediamine,MXDA)等脂肪族多胺;二胺基二苯基甲 烧(4,4’-diaminodiphenylmethane, DDM)、間伸苯基二胺 (m-phenylenediamine, MPDA)、二胺基二苯基颯 (diaminodiphenylsulfone,DDS)等芳香族多胺之外,也可以使 用包含二氰基二醯胺(dicyandiamide,DICY)、有機酸二酿肼 (organic acid dihydrazide)等之多胺化合物;六氫苯二甲酸針 100129155 11 201213112 (hexzhydrophthalic anhydride, ΗΗΡΑ)、曱基四氫苯二曱酸 gf (methyltetrahydrophthalic anhydride, MTHPA)等脂環族酸 酐、偏苯三曱酸酐(trimellitic anhydride,ΤΜΑ)、苯均四酸針 (pyromellitic dianhydride, PMDA)、二苯基酮四緩酸 (benzophenone-3,3’,4,4’-tetracarboxylic acid,BTDA)等包含 芳香族酸酐等之酸酐;苯酚清漆型酚樹脂(novolac type phenolic resin)、紛聚合物(phenolic polymer)等多紛化合物; 聚硫化物(polysulphide)、硫酯(thioester)、硫醚(thioether)等 聚硫醇化合物;異氰酸g旨預聚合物(isocyanate prepolymer)、 被段化異氰酸S旨(blocked isocyanate)等異氰酸g旨化合物;含 叛酸之聚醋樹脂(polyester resin having carboxylic acid)等有 機酸類等聚加成型硬化劑。 此外’例如亦可以使用齡駿清漆型g分樹脂(novolac type phenolic resin)、曱酚酚醛清漆型酚樹脂(res〇i type phenolic resin)等紛樹脂系硬化劑;含經曱基之尿素樹脂(urea resin having methyrol group)般之尿素樹脂;含羥甲基之三聚氰胺 樹月旨(melamine resin having methyrol group)般之三聚氰胺樹 脂等縮合型硬化劑。酚樹脂系硬化劑係指一分子内具有兩個 以上酚性羥基之單體、寡聚物、聚合物全部,其分子量、分 子構造並未特別限定,例如可列舉有酚酚路清漆樹脂 (phenolic novolac resin)、甲盼龄酸清漆樹脂(cresol novolac resin)、萘醇酚醛清漆樹脂(naphthol novolac resin)等酚醛清 100129155 12 201213112 漆樹脂,二盼甲烧型紛樹脂(triphenol methane phenolic resin) 專多官能型紛樹脂;萜稀改質紛樹脂(denatured terpene phenolic resin)、二環戊二烯改質酚樹脂 (dicyclopentadiene-modified phenolic resin)等改質紛樹脂; 具有伸苯基骨架及/或伸聯苯基骨架之酚芳烷基樹脂、具有 伸苯基及/或伸聯苯基骨架之萘醇方烷基樹脂等芳烷基型樹 脂;雙酚A、雙酚F等雙酚化合物等,該等係可單獨使用一 種或並用兩種以上。該等之中’就硬化性之觀點而言,較佳 的是經基當量為90g/eq以上且250g/eq以下。 作為填充粒子’可以使用粉碎二氧化石夕(crushed-silica)、 溶融二氧化矽(melting silica)、結晶性二氧化矽(crystaiiine silica)、二氧化石夕奈米粒子(siuca nanoparticle)、氧化鋁 (alumina)、氫氧化鋁(aiuminum hydroxide)、碳酸約(calcium carbonate)、硫酸鋇(barium sulfonate)、雲母(mica)、滑石(taic) 中之任何一種或混合兩種以上。當將樹脂組成物(II)設為100 重量份時,以5重量份以上且70重量份以下之範圍含有填 充粒子為佳,較佳為1〇重量份以上且60重量份以下之範 圍。藉此’可獲得低熱膨脹、低吸水之效果。 又,填充粒子係以利用雷射繞射散亂式粒度分布測量法 (laser diffraction pacticle size analysis)所得之體積累積粒徑 〇5〇之值為i〇nm以上且ι〇〇ηιη以下為佳,更佳為1〇nm以 上且7〇nm以下。藉由將填充粒子之體積累積粒徑D5〇之值 100129155 13 201213112 設為10nm以上,則可提高分散性。另外,透過將填充粒子 之體積累積粒徑Dm之值設為ι〇〇ηιη以下,則可提高耐藥 品性。 於樹脂組成物(II)中,以含有矽烷型偶合劑為佳。作為矽 烷型偶合劑,可列舉有環氧矽烷型偶合劑(ep〇xy_functi〇nal silane coupling agents)、胺基矽烷偶合劑(amin〇_functi〇nal silane coupling agents)、乙稀基石夕烧偶合劑(vinyi_functi〇nai silane coupling agents)。又,藉由使用環氧矽烷型偶合劑, 則可不使氰酸酯樹脂硬化而形成化學鍵結。因此,預浸體 11與基底樹脂層12之界面可變得強固接黏,而使預浸體j j 與金屬箔13確實結合成為可能。矽烷型偶合劑之含有量係 相對於填充粒子以〇.〇5重量%以上且5重量%以下為佳。 芳香族聚醯胺樹脂、熱硬化性樹脂、填充粒子、硬化劑及 矽烷偶合劑係可使用有機溶劑進行溶解而作成樹脂清漆 (II)。在樹脂清漆(II)中,亦可以含有一般所使用之硬化促進 劑。另外’作為硬化促進劑,可以使用與後述之預浸體i j 中所使用之硬化促進劑相同者。又,於樹脂组成物中, 可因應需要而在可密黏預浸體11與金屬箱丨3之範圍内添加 上述成分以外之添加物。此外,樹脂組成物(H)係在可密黏 預浸體11與金屬箔13之範圍内,可藉由適當調整原料或其 配合量而獲得。 作為有機溶劑,可使用二甲基曱醯胺(dimethylf〇rmaide)、 100129155 14 201213112 二甲基乙醯胺(dimethylacetamide)、N-甲基》比嘻咬酉同 (N~methylpyrrolidone)等作為溶媒。 將依上述操作所得到之樹脂清漆(II)塗佈至金屬箔j 3 上,而作成半硬化狀態,藉以獲得附有基底樹脂層之金屬箔 2。金屬箔13係以由銅或鋁所構成為佳。此時之塗佈方法並 未有限定,例如有藉由各塗佈機進行塗佈之方法或藉由喷吹 而人附上之方法,而以採用凹版印刷塗佈機⑺⑷叫 maChine)為佳。又’樹脂清漆⑻之搖變比(thixotropic ratio ; 為E型黏度計(E_type visc〇meter)中相對於在旋轉數 下之黏度的在旋轉數5rpm下之黏度的比)較佳為Q7以上且 〇以下。透過設為G.7以上,則可為均勻厚度,而藉由設 為1,5以下,則可防止氣泡捲人。又,在將基底樹脂層12 13之表面上後之乾燥係可因應樹脂清漆⑼ 的性貝而^採用可為半硬化狀g之加熱 當將基底樹脂層12之彈性模數設為咖以 。 之《’_強力接料預浸體,故為佳。 金屬箱13之厚度係以〇 5卿以 佳的是1,5_以上幻? _以下為佳,更 粗度㈣⑽喊上;;Y下。_ 13細使用表面 為佳。 且3,以下之電解鋼箱或壓延銅羯 浸體_佳,〜二=:= 100129155 15 201213112 疋2μιη以上且1 以下。基底樹脂層I)之層厚係就可使 絕緣可靠性提升之方面而言,較佳為上述下限值以上。藉 此,在製造印刷佈線板時,可填充並形成内層電路之凹凸, 同時可確保適當的絕緣樹脂層之厚度。 <預浸體11> 於本實施形態中,預浸體11係將由含有熱硬化性成分與 無機填充材作為必要成分之樹脂組成物⑴所構成之絕緣樹 脂層15在纖維基材14上至少含浸一層以上而成者。作為熱 硬化性成分,較佳的是自由氰酸酯樹脂(cyanate resins)、環 氧樹脂(epoxy resins)、順丁烯二醯亞胺樹脂(maldmide奶㈣ 及酚樹脂(phenolic resins)所組成群中選擇至少二種以上來 使用。 氰酸酯樹脂係例如可使ii化氰化合物與酚類進行反應,並 因應需要利用加熱等方法予以預聚合物化而獲得。具體來 說,可列舉有酚醛清漆型氰酸酯樹脂(n〇v〇lac type cyanate resin);芳基芳烷基型氰酸酯樹脂(aUylara][kyi type cyanate resin);雙酚 A 型氰酸酯樹脂(bisphen〇1 a type cyanate resin)、雙紛 E 型孔酸 g旨樹脂(biSphenol E type cyanate resin)、四甲基雙盼F型氰酸醋樹脂(tetramethyl bisphenol F type cyanate resin)等雙酚型氰酸酯樹脂;芳基伸烷基型氰酸 酯樹脂(ally 1 alkylene type cyanate resin)等。該等之中,以酚 醛清漆型氰酸酯樹脂、芳基伸烷基型氰酸酯樹脂為佳。 100129155 16 201213112 氰酸醋樹脂之重1平均分子量(weight-average molecular weight)並沒有特別限定,較佳為5.〇χ1〇2〜4.5xl03,更佳為 6.0x1 〇2〜3.OxlO3。當小於此數值時,會有在預浸體上產生膠 黏性,在預浸體彼此接觸時會相互附著,或是產生樹脂轉印 之情形。又,當大於此數值時,反應變得過快,而會有產生 成形不良,或是層間剝離強度降低之情形。 氰酸酯樹脂之含有量係沒有特別限定,較佳為樹脂組成物 ⑴整體的5重量%以上且60重量%以下,更佳為1〇重量% 以上且50重量%以下。藉由使氰酸酯樹脂等之含有量為上 述下限值,則可防止耐熱性的降低,可減低熱膨脹化。又, 藉由為上述上限值,則可防止耐濕性的降低。 作為酚樹脂’例如可列舉有酚醛清漆型酚樹脂(n〇v〇lac type phenolic resins)、曱酚型酚樹脂(cres〇i type phenoiic resins)、芳基伸烷基型酚樹脂(auyi aikylene type phen〇lic resins)等。該等之中’以芳基伸烷基型酚樹脂為佳。藉此, 則可進一步提升吸濕焊錫耐熱性。酚樹脂係藉由與氰酸酯樹 脂之組合使用,而可提升氰酸酯樹脂之反應性,藉此,則積 層板之成形性變得良好。 作為芳基伸烧基型盼樹脂’例如可列舉有苯二甲基型齡樹 脂(xylylene type phenolic resin)、聯苯基二亞甲基型紛樹脂 (biphenyldimethylene type phenolic resin)等。 尤其是藉由紛酸清漆型氰酸S旨樹脂與芳基伸烧基型鹼樹 100129155 17 201213112 脂之組合,而可控制交聯密度,可提高對基底樹脂層η的 接黏性。 酚树月曰之含有莖並沒有特別限定,較佳為樹脂組成物⑴ 整體的1重量%以上且55重量%以下,更佳為5重量%以上 且40重量%以下’再更佳為8重量%以上且2G重量%以下。 藉由將紛樹脂設為上述下限值,則可確實提料熱性,而設 為上述上限值,則可為低吸水。酚樹脂之重量平均分子量 (weight-average molecular weight)並沒有特別限定重量平 均分子量較佳為4xl〇2〜1·8χ103,更佳為弘⑺2^ 5χΐ〇3。藉 由將重I平均分子量設為上述下限值,則預浸體會變得難以 引起膠黏性(tackiness)等問題,而設為上述上限值,則於預 浸體製作時,可提高對於基材的含浸性,而獲得更均勻的製 品。 作為環氧樹脂,並沒有特別限定,例如可列舉有雙酚A 型環氧樹脂(bisphenol A type epoxy resin)、雙驗F型環氧樹 脂(bisphenol F type epoxy resin)、雙酚 e 型環氧樹脂 (biSphen〇lEtypeepoxyresin)、雙紛 S 型環氧樹脂⑽i S type epoxy resin)、雙酚 z 型環氧樹脂(bisphen〇1 z type epoxy resin)、雙酚 P 型環氧樹脂(biSphen〇1 p type ep〇xy resin)、雙龄 M 型環氧樹脂(bisph⑽ 1 M type ep0Xy resin)等 雙齡型環氧樹脂;紛盼盤清漆型環氧樹脂(phen〇l novolac type epoxy resin)、曱酸紛酸清漆型環氣樹脂(賴〇1 n〇v〇lac 100129155 18 201213112 type epoxy resin)等酚醛清漆型環氧樹脂;聯苯基型環氧樹 脂(biphenyl type epoxy resin)、苯二甲基型環氧樹脂(xylylene type epoxy resin)、酚芳烷基型環氧樹脂(phenolaralkyl type epoxy resin)、聯本基方烧基型環氧樹脂(biphenylaralkyl type epoxy resin)、聯苯基二亞曱基型環氧樹脂 (biphenyldimethylene type epoxy resin)、叁苯甲烷酚醛清漆 型環氧樹脂(trisphenolmethane novolac type epoxy resin)、 1,1,2,2-(四本基)乙焼(之縮水甘油基類(giycidyl ether of l,l,2,2-(tetraphenol)ethane)、3官能或4官能之縮水甘油基 胺類,四曱基聯苯基型環氧樹脂(tetramethylbiphenyl type epoxy resin)等芳基伸烷基型環氧樹脂(auyi aikylene type epoxy resin);伸萘基骨架改質曱酚酚醛清漆型環氧樹脂 (naphthalene modified cresol novolac type epoxy resin)、甲氧 基伸萘基改質曱酚酚醛清漆型環氧樹脂 (methoxynaphthalene modified cresol novolac type epoxy resin)、甲氧基伸萘基二亞曱基型環氧樹脂 (methoxynaphthalene dimethylene type epoxy resin)、萘醇伸 烧基型環氧樹脂(naphthol alkylene type epoxy resin)等伸英 基型環氧樹脂(naphthalene type epoxy resins);蒽型環氧樹月旨 (anthracene type epoxy resins);苯氧基型環氧樹脂(phen〇xy type epoxy resins);二環戊二烯型環氧樹脂 (dicyclopentadiene type epoxy resins);降稻稀型環氧樹月匕 100129155 19 201213112 (norbornene type epoxy resins)、金剛烷型環氧樹脂 (admantane type epoxy resins)、第型環氧樹脂(fiu〇rme 咖 epoxy觀ns)、將上述環氧樹脂h s化之難燃化環氧樹脂 (flame-retardant epoxy resins)等。該等之中,可以單獨使用 -種,或併用具有相異重量平均分子量之兩種以上,還可以 一種或兩種以上與該等之預聚合物併用。 該等環氧賴之t,触妓自由料絲縣型環氧樹 脂、伸萘基骨纽祕清_縣細旨及^祕清 漆型料職、伸録型環氧㈣旨聽成群中選擇至少一 種。藉此’除了可以提高操作性,還可讀升及難燃 性。 t作為熱硬化性成分,較佳為至少包含氰__與環氧樹 或環氧樹脂與_脂之級合,更佳為包含氰_ 树月日與%氧樹脂與酚樹脂之組人 氮酸_脂與_脂與聯苯^是在制祕清漆型 ± 〜亞曱基型環氧樹脂之組合 W㈣麵的尺寸安定性。 裱氧樹脂之含有量並沒有特 整體的i重量⑽上且55 44q/ k,較佳為樹脂組成物⑴ 且4 0重量%以下。藉由將^"下,更佳為2重量%以上 值,則可防止氰_樹脂之反氣^之含有量設為上述下限 之製品之耐濕性的降低。又,;降低’且可防止所獲得 止耐熱性的降⑯。環氣;:是為上述上限值’則可防 T &之重量平均分子量 100129155 201213112 (weight-average molecular weight)並沒有特別限定,重量平 均分子量較佳為5xl02以上且2χ103以下,更佳為8xl〇2以 上且1.5xl〇3以下。藉由將重量平均分子量設為上述下限 值,則預浸體會變得難以產生膠黏性,而設為上述上限值, 則有於預浸體製作時,可防止對於基材之含浸性的降低,而 獲得更均勻之製品的優點。 樹脂組成物(I)中之上述氰酸酯樹脂、環氧樹脂及酚樹脂之 一部分係亦可為乙稀基酉旨樹脂(vinyl ester resins)、三聚氰胺 樹脂(melamine resins)、順丁烯二醯亞胺樹脂(maleimide resins)等其他熱硬化性樹脂、苯氧樹脂(phen〇xyresins)、聚 驢亞胺樹脂(polyimide resins)、聚醯胺醯亞胺樹脂 (polyamideimide resins)、聚苯醚樹脂(polyphenylene 〇xide resins)、聚 it 颯樹脂(polyethersulfone resins)等熱塑性樹脂。 作為無機填充材’例如可列舉有滑石(talk)、氧化鋁 (alumina)、玻璃(glass)、二氧化矽(Siiica)、雲母(mica)等。 該等之中,以二氧化矽為佳,熔融二氧化矽(melting silica) 係以低膨脹性之優點而為佳。其形狀係有破碎狀、球狀,可 就對於玻璃基材之含浸性確保方面、降低樹脂組成物之熔融 黏度方面而使用球狀二氧化石夕(SpheriCal-shaped silica)等因 應其目的來採用使用方法。 無機填充材之平均粒徑(average particle size)並沒有特別 限定,較佳為Ο.ΟΙμιη以上且5μηι以下,更佳為〇 2μιη以上 100129155 21 201213112 且2/πη以下。藉由設為上述下限值,則可提升預浸體製作 時之作錄。又’藉㈣為切域值,則可防止在清漆中 發生無機填充材之沉澱等觀。此外,較㈣是平均粒徑為 5/mi以下之球狀熔融二氣化矽,更佳的是平均粒徑為 0·0_以上且2Mm以下之球狀熔融二氧化石夕。藉此,則可 使無機填充材之填充性提鬲。平均粒徑係例如可採用雷射光 散射式粒度分佈測量裝置(laser diffracti〇n partide size analyzer)來加以測量。 無機填充材之含有量係以樹脂組成物⑴整體之重量% 以上且80重里/ί>以下為佳,更佳為4〇重量%以上且75重 量%以下。當無機填充材之含有量在上述範圍内,則可為低 熱膨脹、低吸水。 關於樹脂組成物(I),並沒有特別限定,較佳為進一步使用 偶合劑。藉由配合偶合劑’則樹脂與無機填充材之界面的濕 潤性得以提升’樹脂及填充材可相對於纖維基材14均勻固 定黏住’並可改良耐熱性、尤其是吸濕後之焊錫耐熱性。作 為偶合劑,若為通常所使用者則均可使用,其中,較佳為從 環氧石夕院偶合劑(epoxy-functional silane coupling agent)、鈦 酸酯系偶合劑(titan coupling agent)、胺基矽烧偶合劑 (amino-functional silane coupling agent)及聚石夕氧油型偶合 劑(silicone oil type coupling agent)中選擇一種以上偶合劑使 用。該等偶合劑係因與無機填充材界面之濕潤性較高,而可 100129155 22 201213112 進一步提升耐熱性。偶合劑之配合量係以相對於無機填充材 為0.05重量%以上且3重量%以下為佳。藉由設為上述上限 值’則將填充材充分覆蓋而可得到足夠的耐熱性,而藉由設 為上述下限值,則成為無視對於反應之影響的程度,而可以 防止彎曲強度等降低。 對於樹脂組成物(I),因應必要性亦可使用硬化促進劑。作 為硬化促進劑,可使用公知物質。例如,可列舉有環烷酸鋅 (zmc naphthenate)、環烷酸鈷(c〇balt naphthenate)、辛酸錫(tin octylate)、辛酸始(cobalt octylate)、辛酸辞(zinc octylate)、 雙乙酿基丙酮酸g旨銘(II)(cobalt (II) bis(acetylacetonate))、卷 乙酿基丙酉同酸 g旨銘(ni)(cobalt (III) tris(acetylacetonate))等有 柢:金屬鹽,二乙胺(triethylamine)、三丁胺(tributhylamine)、 二吖雙環[2,2,2]辛烧(diazabicyclo[2,2,2]octane)等三級胺 類;二氰二胺(dicyandiamide)等芳香族二胺化合物;2-苯基 -4-曱基米唾(4_methyl-2-phenylimidazole)、2-乙基-4-甲基口米 哇(2-ethyl-4-methylimidazole)、2-苯基-4-甲基-5-氫味吐 (2-phenyl-4-methyl-5-hydroxyimidazole)、2-苯基·4,5-二氫咪 唑(2-phenyl-4,5-dihydroxyimidazole)等咪唑類;酚(phenol)、 雙盼A(bisphenol A)、壬基盼(nonylphenol)等紛化合物;醋 酸(acetic acid)、安息香酸(benzoic acid)、水揚酸(saiiCyiic acid)、對曱笨石黃酸(p-toluene sulfonic acid)等有機酸等、或 其混合物。 100129155 23 201213112 硬化促進劑之其他具體例係可列舉有有機膦、四取代鱗化 合物、磷酸甜菜驗化合物、膦化合物與醌化合物之加成物、 鎮化合物與矽炫*化合物之加成物等含破原子之化合物;丨,8_ 二吖雙環(5,4,0)十一烯 _7(l,8-diazabicyclo[5,4,0]undec-7-ene) 、苄基一曱基胺(benzyldimethylamine)、2-曱基口米0坐 (2-methylimidazole)等含氮原子之化合物。 該等之中’就硬化性觀點而言,以含磷原子之化合物為 佳,而就流動性與硬化性之觀點而言,則以四取代鱗化合 物、磷酸甜菜验(phosphobetaine)化合物、膦化合物與醌化合 物之加成物、鱗化合物與矽烷化合物之加成物等具有潛伏性 之觸媒為佳。當考慮到流動性觀點時,特佳為四取代鱗化合 物’又,就耐焊錫性觀點而言,特佳為磷酸甜菜鹼化合物、 膦化合物與醌化合物之加成物,另外,若慮及潛伏的硬化性 觀點,則特佳為鱗化合物與矽烷化合物之加成物。此外,依 成形性之觀點來說’以四取代鱗化合物為宜。 作為有機膦’例如可列舉有乙基膦(ethylphosphine)、苯基 膦 (phenylphosphine)等一級膦;二甲基膦 (dimethylphosphine)、二苯基膦(diphenylphosphine)等二級 膦;三甲基膦(trimethylphosphine)、三乙基膦 (triethylphosphine)、三 丁基膦(tributhylphosphine)、三苯基 麟(triphenylphosphine)等三級膦。 作為四取代鐫化合物,例如可舉出有以下述一般式(3)所 100129155 24 (3) (3)201213112 示之化合物等。 [化3] R17 1 — - R18一P 一 R20 A AH 1 yOH (2) In the general formula (2), m and n represent the number of repeating units, and are 50 to 5, an integer of 〇〇〇. Aq and Ar2 represent a divalent aromatic group, and may be the same or different. X represents a group having a segment of a rubber component. The aromatic polyamine resin and the rubber component are preferably 30% by weight or more and 85% by weight or less based on the so-called aromatic polyamide resin, and the remainder is preferably a rubber component. When the resin composition (II) is used in an amount of 1 part by weight, the aromatic polyamine resin is preferably used in a mixing ratio of 5 parts by weight or more and 75 parts by weight or less, more preferably 20 parts by weight or more. 50 parts by weight or less. Examples of the thermosetting resin include epoxy resin (ep0Xyresins), cyanate resins, unsaturated polyester resins, and benzoCyCi〇butene resins. Resins) and bis-bis-bisphosphonimide triazine resins). It is more preferable to use an epoxy resin or a cyanate resin, and it is more preferable to use a combination of an epoxy resin and a cyanate resin. When the resin composition (11) is 1 part by weight, the thermosetting resin may be used in a mixing ratio of 5 parts by weight or more and 75 parts by weight or less. The blending ratio of the epoxy resin to the vinegar resin is preferably 5 parts by weight or more and 75 parts by weight or less. As the epoxy resin, a biphenyl type epoxy resin 100129155 9 201213112 (biphenyl type epoxy resin), a bisphenol type epoxy resin, or a stilbene type epoxy resin can be used. , phenol novolac type epoxy resin, cres 〇 novolac type epoxy resin, triphenolmethane type epoxy resin, alkane Aikyl-modified triphenolmethane type epoxy resin, epoxy resin containing a triazine uncleus, dicyclopentadiene type epoxy Resin), phenolaralkyl type epoxy resin, phenolbiphenylaralkyl type epoxy resin, naphthalene modified phenolic varnish type epoxy resin (naphthalene) "modified phenolic novolac type epoxy resin), etc. "These epoxy resins may be used alone or in combination of two or more. Among these, bisphenol type epoxy resin, dicyclopentadiene type epoxy resin, phenol aralkyl type epoxy resin, in particular, from the viewpoints of low water absorption, high adhesion of plating, and heat resistance, A phenol biphenyl aralkyl type epoxy resin or a naphthalene modified phenol novolac type epoxy resin is preferred. The cyanate resin is preferably an aromatic cyanate resin, and specific examples thereof include a phenol novolac type or a phenol phenol varnish type (cresol n〇v〇iac type). a varnish-type cyanate resin; a phenylaralkyl type cyanate resin; a biphenylaralkyl type cyanate resin; a naphthyl aralkyl type cyanide Acid 100129155 10 201213112 ester resin (naphthalenear alkyl type cyanate resin); bisphenol A type, bisphenol E type, tetramethyl bisphenol F type An acid ester resin or the like. Among these, a novolac type cyanate resin is preferred. Examples of the curing agent include benzyldimethylamine (BDMA) and 2,4,6-tris(dimethylaminomethyl)phenol. DMP-30) and other tertiary amine compounds; 2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24), 2-phenyl 4-methyl-2-phenylimidazole (2P4MZ), 2-phenylimidazole (2PZ), 2-phenyl-4-mercapto-5-hydrogen A catalyzed hardening agent such as a Lewis acid such as a phenylidene triazole complex or a boron trifluoride complex. Further, for example, an aliphatic polyamine such as diethylenetriamine (DETA), triethylenetetramine (TETA), or m-xylylenediamine (MXDA); Except for aromatic polyamines such as 4,4'-diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS) It is also possible to use a polyamine compound containing dicyandiamide (DICY), organic acid dihydrazide or the like; hexahydrophthalic acid needle 100129155 11 201213112 (hexzhydrophthalic anhydride, ΗΗΡΑ), 曱Alicyclic anhydrides such as methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (、), pyromellitic dianhydride (PMDA), diphenyl ketone Acid (benzophenone-3, 3', 4, 4'-tetracarboxylic acid, BTDA) and the like containing an aromatic acid anhydride or the like; phenol varnish type phenolic resin (novolac type phenolic resin), phenolic po Lymer) and other compounds; polysulfide (polysulphide), thioester (thioester), thioether (thioether) and other polythiol compounds; isocyanate prepolymer (isocyanate prepolymer), isocyanate A compound called isocyanate, such as blocked isocyanate, or a polyaddition hardening agent such as an organic acid such as a polyester resin having a carboxylic acid. Further, for example, a resin-based hardener such as a novolac type phenolic resin or a res phenol type phenolic resin may be used; and a thiol-containing urea resin may be used ( Urea resin has a condensed hardener such as a melamine resin such as a melamine resin having a methyrol group. The phenol resin-based curing agent refers to a monomer, an oligomer, and a polymer having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited, and examples thereof include a phenolic phenol varnish resin (phenolic). Novolac resin), cresol novolac resin, naphthol novolac resin, etc. 100129155 12 201213112 lacquer resin, triphenol methane phenolic resin Functionalized resin; modified terpene phenolic resin, dicyclopentadiene-modified phenolic resin, etc.; modified phenyl skeleton and/or extension a phenolic aralkyl resin of a phenyl skeleton, an aralkyl type resin such as a naphthol arylalkyl resin having a pendant phenyl group and/or a phenyl group extending; a bisphenol compound such as bisphenol A or bisphenol F, etc. The system may be used alone or in combination of two or more. Among these, 'the basis weight is 90 g/eq or more and 250 g/eq or less from the viewpoint of hardenability. As the packed particles 'crushed-silica, melted silica, crystaiiine silica, siuca nanoparticle, alumina can be used. (alumina), aluminium hydroxide, calcium carbonate, barium sulfonate, mica, taic, or a mixture of two or more. When the resin composition (II) is 100 parts by weight, the filler particles are preferably contained in an amount of from 5 parts by weight to 70 parts by weight, preferably from 1 part by weight to 60 parts by weight. Thereby, the effect of low thermal expansion and low water absorption can be obtained. Further, the volume of the volume-accumulated particle diameter 〇5 所得 obtained by the laser diffraction pacticle size analysis is preferably i 〇 nm or more and ι ηηη or less. More preferably, it is 1 〇 nm or more and 7 〇 nm or less. The dispersibility can be improved by setting the value of the volume cumulative particle diameter D5 of the filler particles to 100,129,155 13 201213112 to 10 nm or more. Further, by setting the value of the volume cumulative particle diameter Dm of the filler particles to ι〇〇ηιη or less, the drug resistance can be improved. In the resin composition (II), a decane type coupling agent is preferred. Examples of the decane type coupling agent include ep〇xy_functi〇nal silane coupling agents, amin〇_functi〇nal silane coupling agents, and ethylene base kiln coupling agents. (vinyi_functi〇nai silane coupling agents). Further, by using an epoxy decane type coupling agent, chemical bonding can be formed without curing the cyanate resin. Therefore, the interface between the prepreg 11 and the base resin layer 12 can be strongly bonded, and it is possible to surely bond the prepreg j j and the metal foil 13. The content of the decane type coupling agent is preferably 5% by weight or more and 5% by weight or less based on the filler particles. The aromatic polyamide resin, the thermosetting resin, the filler particles, the curing agent, and the decane coupling agent can be dissolved in an organic solvent to form a resin varnish (II). In the resin varnish (II), a hardening accelerator which is generally used may be contained. Further, as the curing accelerator, the same curing accelerator as used in the prepreg i j described later can be used. Further, in the resin composition, additives other than the above components may be added to the range of the densely prepreg 11 and the metal case 3 as needed. Further, the resin composition (H) is in the range of the densely prepreg 11 and the metal foil 13, and can be obtained by appropriately adjusting the raw material or the amount thereof. As the organic solvent, dimethylf〇rmaide, 100129155 14 201213112 dimethylacetamide, N-methyl, N-methylpyrrolidone or the like can be used as a solvent. The resin varnish (II) obtained in the above operation was applied onto the metal foil j 3 to be in a semi-hardened state, thereby obtaining a metal foil 2 to which a base resin layer was attached. The metal foil 13 is preferably made of copper or aluminum. The coating method at this time is not limited, and for example, there is a method of coating by each coater or a method of attaching by a blow, and it is preferable to use a gravure coater (7) (4) called maChine. . Further, the ratio of the resin varnish (8) is preferably greater than or equal to the ratio of the viscosity at a rotation number of 5 rpm to the viscosity at the number of rotations in the E-type viscmeter (E_type viscmeter). 〇The following. When it is set to G.7 or more, it can be a uniform thickness, and by setting it to 1,5 or less, it can prevent a bubble from being wounded. Further, the drying after the surface of the base resin layer 12 13 can be heated in accordance with the nature of the resin varnish (9), and the elastic modulus of the base resin layer 12 can be set. It is better to use the '_ strong receiving prepreg. The thickness of the metal box 13 is preferably 15 qing, which is more than 1,5 _? _ The following is better, more coarse (four) (10) shouted;; Y down. _ 13 Fine surface is preferred. And 3, the following electrolytic steel box or rolled copper 浸 immersion _ good, ~ two =: = 100129155 15 201213112 疋 2μιη and above and 1 or less. The layer thickness of the base resin layer I) is preferably at least the above lower limit in terms of improving the insulation reliability. Therefore, in the manufacture of the printed wiring board, the unevenness of the inner layer circuit can be filled and formed, and the thickness of the appropriate insulating resin layer can be ensured. <Prepreg 11> In the present embodiment, the prepreg 11 is such that at least the insulating resin layer 15 composed of the resin composition (1) containing the thermosetting component and the inorganic filler as an essential component is on the fibrous substrate 14. Impregnated with more than one layer. As the thermosetting component, preferred are a group of cyanate resins, epoxy resins, maleimide (m), and phenolic resins. The cyanate resin may be used, for example, by reacting a ii cyanide compound with a phenol, and prepolymerizing it by heating or the like as needed. Specifically, a novolac may be mentioned. 〇c〇lac type cyanate resin; aryl aralkyl type cyanate resin; a bisphenol A type cyanate resin Cyanate resin), bisphenol type cyanate resin such as biSphenol E type cyanate resin, tetramethyl bisphenol F type cyanate resin; An alkylene type cyanate resin, etc. Among them, a novolak type cyanate resin or an aryl alkyl group cyanate resin is preferred. 100129155 16 201213112 Cyanate vinegar Resin weight 1 level The weight-average molecular weight is not particularly limited, and is preferably 5.〇χ1〇2~4.5xl03, more preferably 6.0x1 〇2~3.OxlO3. When it is less than this value, there will be a prepreg. The adhesiveness is generated when the prepreg is in contact with each other, or the resin is transferred. Further, when it is larger than this value, the reaction becomes too fast, and there is a poor formation or interlayer. The content of the cyanate resin is not particularly limited, and is preferably 5% by weight or more and 60% by weight or less, and more preferably 1% by weight or more and 50% by weight or less based on the entire resin composition (1). By setting the content of the cyanate resin or the like to the lower limit, the heat resistance can be prevented from being lowered, and the thermal expansion can be reduced. Further, by the above upper limit, the moisture resistance can be prevented from being lowered. Examples of the phenol resin include, for example, n〇v〇lac type phenolic resins, cres〇i type phenoiic resins, and auyi aikylene type phen resins. 〇lic resins) and so on. Among other 'are aryl alkylene type phenol resin is preferred. Accordingly, the absorbent may be further improved solder heat resistance. The phenol resin is used in combination with a cyanate resin to increase the reactivity of the cyanate resin, whereby the formability of the laminate is improved. Examples of the aryl-based base type phenolic resin include a xylylene type phenolic resin and a biphenyl dimethyl phenolic resin. In particular, by combining the acid varnish type cyanate S resin with the aryl stretching base type alkali tree 100129155 17 201213112, the crosslinking density can be controlled, and the adhesion to the base resin layer η can be improved. The stem of the phenol tree sap is not particularly limited, and is preferably 1% by weight or more and 55% by weight or less, more preferably 5% by weight or more and 40% by weight or less or more preferably 8 parts by weight based on the entire resin composition (1). % or more and 2G% by weight or less. By setting the resin to the above lower limit value, the heat can be surely extracted, and if the upper limit is set, the water absorption can be low. The weight-average molecular weight of the phenol resin is not particularly limited. The average molecular weight is preferably 4 x 1 〇 2 to 1 · 8 χ 103, more preferably Hong (7) 2 χΐ〇 5 χΐ〇 3. When the weight I average molecular weight is set to the above lower limit value, the prepreg becomes less likely to cause problems such as tackiness, and when the above upper limit is used, the prepreg can be improved in the production of the prepreg. The impregnation of the substrate results in a more uniform article. The epoxy resin is not particularly limited, and examples thereof include a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a bisphenol e type epoxy resin. Resin (biSphen〇lEtypeepoxyresin), double-type S-type epoxy resin (10) i S type epoxy resin), bisphenol z-type epoxy resin, bisphenol P-type epoxy resin (biSphen〇1 p Type ep〇xy resin), double-aged epoxy resin (bisph(10) 1 M type ep0Xy resin); phen〇l novolac type epoxy resin, tannic acid A phenolic varnish-type epoxy resin such as a varnish-type epoxy resin (Laiwu 1 n〇v〇lac 100129155 18 201213112 type epoxy resin); a biphenyl type epoxy resin, a benzoic acid type Xylylene type epoxy resin, phenolaralkyl type epoxy resin, biphenylaralkyl type epoxy resin, biphenyl dialkyl fluorene type Epoxy resin (biphenyldimethylene type epoxy res In), trisphenolmethane novolac type epoxy resin, 1,1,2,2-(tetraphenyl)acetamidine (gycidyl ether of l, l, 2 , 2-(tetraphenol)ethane, trifunctional or tetrafunctional glycidylamine, aryl-alkyl-type epoxy resin such as tetramethylbiphenyl type epoxy resin (auyi aikylene type) Epoxy resin); naphthalene modified cresol novolac type epoxy resin, methoxynaphthalene modified cresol novolac type epoxy Resin-based epoxy resin (naphthalene type), methoxynaphthalene dimethylene type epoxy resin, naphthol alkylene type epoxy resin Epoxy resins); anthracene type epoxy resins; phen〇xy type epoxy resins; dicyclopentadiene type epoxy resins Tadiene type epoxy resins); rice-diluted epoxy tree 匕100129155 19 201213112 (norbornene type epoxy resins), adamantane type epoxy resins, type epoxy resin (fiu〇rme café view) Ns), flame-retardant epoxy resins in which the above epoxy resin is hs. Among these, one type or two or more types having different weight average molecular weights may be used in combination, and one type or two or more types may be used in combination with the above-mentioned prepolymers. These epoxy-based t, touch-free free silk-type epoxy resin, stretch naphthalene-based bone secrets _ county fine and ^ secret varnish-type materials, stretch-type epoxy (four) in the group At least one. In this way, in addition to improving operability, it is also readable and flame retardant. t as a thermosetting component, preferably comprising at least a combination of cyanide and epoxy or epoxy and _lipid, more preferably a group of human nitrogen containing cyanide and oxyphenol resin Acid _ fat and _ fat and biphenyl ^ is the dimensional stability of the W (four) surface of the combination of the secret varnish type ± ~ yttrium type epoxy resin. The content of the epoxy resin is not particularly high on the i weight (10) and is 55 44 q/k, preferably the resin composition (1) and 40% by weight or less. By more preferably 2% by weight or more, the content of the anti-gas content of the cyanide-resin can be prevented from being lowered as the moisture resistance of the product having the lower limit. Further, it is lowered to prevent a decrease in heat resistance of 16 obtained. The ring gas; is the above-mentioned upper limit value, and the weight average molecular weight of the T & 100129155 201213112 (weight-average molecular weight) is not particularly limited, and the weight average molecular weight is preferably 5x10 or more and 2χ103 or less, more preferably 8xl〇2 or more and 1.5xl〇3 or less. When the weight average molecular weight is set to the above lower limit value, the prepreg becomes less likely to cause adhesiveness, and when it is set to the above upper limit, it is possible to prevent impregnation with the substrate when the prepreg is produced. The reduction in the advantages of obtaining a more uniform product. One of the above-mentioned cyanate resin, epoxy resin and phenol resin in the resin composition (I) may be vinyl ester resins, melamine resins, and maleic acid. Other thermosetting resins such as maleimide resins, phenoxyxysins, polyimide resins, polyamideimide resins, polyphenylene ether resins ( Polyphenylene 〇xide resins), thermoplastic resins such as polyethersulfone resins. Examples of the inorganic filler □ include talc, alumina, glass, bismuth dioxide, mica, and the like. Among these, cerium oxide is preferred, and molten melting silica is preferred because of its low expansion property. The shape is a crushed shape or a spherical shape, and it can be used for the purpose of ensuring the impregnation property of the glass substrate and reducing the melt viscosity of the resin composition by using SpheriCal-shaped silica. Instructions. The average particle size of the inorganic filler is not particularly limited, and is preferably Ο.ΟΙμη or more and 5 μηι or less, more preferably 〇 2 μm or more and 100129155 21 201213112 and 2/πη or less. By setting the above lower limit value, the recording of the prepreg can be improved. Further, by using (4) as the cut-off value, precipitation of the inorganic filler in the varnish can be prevented. Further, (4) is a spherical molten gasified cerium having an average particle diameter of 5 / mi or less, and more preferably a spherical molten sulphur dioxide having an average particle diameter of 0·0_ or more and 2 Mm or less. Thereby, the filling property of the inorganic filler can be improved. The average particle size can be measured, for example, by a laser diffracti〇n partide size analyzer. The content of the inorganic filler is preferably from 80% by weight or more to 80% by weight of the total weight of the resin composition (1), more preferably from 4% by weight to 75% by weight. When the content of the inorganic filler is within the above range, it may be low in thermal expansion and low in water absorption. The resin composition (I) is not particularly limited, and it is preferred to further use a coupling agent. By blending the coupling agent, the wettability of the interface between the resin and the inorganic filler material is improved. 'The resin and the filler material can be uniformly fixed and adhered to the fiber base material 14' and the heat resistance, especially the moisture resistance after soldering, can be improved. Sex. The coupling agent can be used as a general user, and preferably an epoxy-functional silane coupling agent, a titan coupling agent, or an amine. One or more coupling agents are selected from the group consisting of an amino-functional silane coupling agent and a silicone oil type coupling agent. These coupling agents have higher wettability at the interface with the inorganic filler, and can further improve heat resistance by 100129155 22 201213112. The blending amount of the coupling agent is preferably 0.05% by weight or more and 3% by weight or less based on the inorganic filler. By setting the above-mentioned upper limit value, the filler can be sufficiently covered to obtain sufficient heat resistance, and by setting it as the lower limit value, the influence on the reaction can be ignored, and the bending strength and the like can be prevented from being lowered. . For the resin composition (I), a hardening accelerator may be used as necessary. As the hardening accelerator, a known substance can be used. For example, zinc zirconate, zallium naphthenate, tin octylate, cobalt octylate, zinc octylate, and diacetyl can be cited. Pyruvic acid g (II) (cobalt (II) bis (acetylacetonate), volume (co) (co) (co) (cobalt (III) tris (acetylacetonate)), etc.: metal salts, Tertiary amines such as triethylamine, tributhylamine, diazabicyclo[2,2,2] octane; dicyandiamide An aromatic diamine compound; 2-phenyl-4-phenylimidazole, 2-ethyl-4-methylimidazole, 2- Phenyl-4-methyl-5-hydroxyimidazole, 2-phenyl-4,5-dihydroxyimidazole Imidazoles; phenol, bisphenol A, nonylphenol, etc.; acetic acid, benzoic acid, sailiCyiic acid, confrontation Organic such as p-toluene sulfonic acid And the like, or mixtures thereof. 100129155 23 201213112 Other specific examples of the hardening accelerator include an organic phosphine, a tetrasubstituted scale compound, a phosphoric acid beet test compound, an adduct of a phosphine compound and a ruthenium compound, an adduct of a symbiotic compound and a ruthenium compound, and the like. a compound that breaks atoms; 丨, 8_ dibicyclobicyclo(5,4,0)undecene-7 (1,8-diazabicyclo[5,4,0]undec-7-ene), benzyl-mercaptoamine ( A compound containing a nitrogen atom such as benzyldimethylamine or 2-methylimidazole. Among these, 'from the viewpoint of hardenability, a compound containing a phosphorus atom is preferred, and from the viewpoint of fluidity and hardenability, a tetrasubstituted scale compound, a phosphobetaine compound, a phosphine compound are used. It is preferred to have a latent catalyst such as an adduct of an anthracene compound, an adduct of a scale compound and a decane compound. When considering the fluidity point of view, it is particularly preferable to be a tetra-substituted squama compound. Further, in terms of solder resistance, it is particularly preferable to be a phosphoric acid betaine compound, an addition product of a phosphine compound and a ruthenium compound, and, in addition, to take into account the latent The sclerosing point of view is particularly preferred as an adduct of a scaly compound and a decane compound. Further, it is preferred to use a tetra-substituted scale compound from the viewpoint of formability. Examples of the organic phosphine include, for example, a primary phosphine such as ethylphosphine or phenylphosphine; a secondary phosphine such as dimethylphosphine or diphenylphosphine; and trimethylphosphine ( Trimethylphosphine), triethylphosphine, tributylphosphine, triphenylphosphine, and the like. The compound represented by the following general formula (3), 100129155 24 (3) (3) 201213112, and the like are exemplified as the tetra-substituted fluorene compound. [Chemical 3] R17 1 — - R18-P-R20 A AH 1 y
R19 」X 在一般式(3)中,P係表示磷原子,R17、R18、R19及R20 係分別獨立地表示芳香族基或烷基,A係表示於芳香環上具 有至少一個選自羥基、羧基、氫硫基之任一官能基的芳香族 有機酸之陰離子,AH係表示於芳香環上具有至少一個選自 羥基、羧基、氫硫基之任一官能基的芳香族有機酸,X及y 係1〜3之整數,z係0〜3之整數,且x=y。 以一般式(3)所示之化合物係例如可依下述而獲得,但是 並未限定於此。首先,將四取代鎮化合物與芳香族有機酸與 鹼均勻混合於有機溶劑中,使該溶液系統内產生芳香族有機 酸陰離子。其次,加入水,可使以一般式(3)所示之化合物 沉澱。關於以一般式(3)所示之化合物,就合成時之取得率 與硬化促進效果之均衡優異的觀點而言,較佳的是鍵結於磷 原子上之R17、R18、R19及R20為苯基,且AH為在芳香 環上具有羥基之化合物,亦即,酚化合物,且A為該酚化 合物之陰離子。 作為磷酸甜菜鹼化合物,例如可舉出有以下述一般式(4) 所示之化合物等。 100129155 25 201213112[化4]R19 ′ X In the general formula (3), P represents a phosphorus atom, R17, R18, R19 and R20 each independently represent an aromatic group or an alkyl group, and A represents at least one selected from a hydroxyl group on the aromatic ring. An anion of an aromatic organic acid having any one of a carboxyl group and a hydrogenthio group; and AH is an aromatic organic acid having at least one functional group selected from a hydroxyl group, a carboxyl group or a thiol group on the aromatic ring, X and y is an integer from 1 to 3, z is an integer from 0 to 3, and x = y. The compound represented by the general formula (3) can be obtained, for example, by the following, but is not limited thereto. First, a tetrasubstituted town compound and an aromatic organic acid and a base are uniformly mixed in an organic solvent to produce an aromatic organic acid anion in the solution system. Next, by adding water, the compound represented by the general formula (3) can be precipitated. In view of the fact that the compound represented by the general formula (3) is excellent in the balance between the yield at the time of synthesis and the hardening promoting effect, it is preferred that R17, R18, R19 and R20 bonded to the phosphorus atom are benzene. And AH is a compound having a hydroxyl group on the aromatic ring, that is, a phenol compound, and A is an anion of the phenol compound. The phosphoric acid betaine compound may, for example, be a compound represented by the following general formula (4). 100129155 25 201213112[化4]
⑷ 在一般式(4)中,XI係表示碳數1〜3之烷基,Y1係表示 經基,f係表示0〜5之整數,g係0〜4之整數。 以一般式(4)所示之化合物係例如可依下述而獲得。首 先,使屬於三級膦之三芳香族取代膦與重氮鹽接觸,並經由 三芳香族取代膦與重氮鹽所具有之重氮基的取代步驟而可 獲得。但是並不限定於此。 作為膦化合物與醌< 化合物之加成物,例如可舉出有以下述 一般式(5)所示之化合物等。 [化5](4) In the general formula (4), XI represents an alkyl group having 1 to 3 carbon atoms, Y1 represents a trans group, f represents an integer of 0 to 5, and g is an integer of 0 to 4. The compound represented by the general formula (4) can be obtained, for example, as follows. First, a triaromatic substituted phosphine belonging to the tertiary phosphine is contacted with a diazonium salt and is obtained by a substitution step of a diazo substituted phosphine and a diazonium having a diazonium salt. However, it is not limited to this. The compound represented by the following general formula (5), and the like, may be mentioned as an adduct of the phosphine compound and the ruthenium compound. [Chemical 5]
在一般式(5)中,P係表示磷原子,R21、R22及R23係相 互獨立地表示碳數1〜12之烷基或碳數6〜12之芳基,R24、 R25及R26係相互獨立地表示氫或碳數1〜12之烴基,R24 與R25亦可以相互鍵結形成環。 作為膦化合物與醌化合物之加成物中所使用之膦化合 物,例如可列舉有較佳的三苯基膦(triphenylphosphine)、卷 100129155 26In the general formula (5), P represents a phosphorus atom, and R21, R22 and R23 independently of each other represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, and R24, R25 and R26 are independent of each other. The ground represents hydrogen or a hydrocarbon group having 1 to 12 carbon atoms, and R24 and R25 may be bonded to each other to form a ring. The phosphine compound used in the adduct of the phosphine compound and the hydrazine compound may, for example, be a preferred triphenylphosphine or a roll 100129155 26
S 201213112 (烧基苯基)膦(tris(alkylphenyl)phosphine)、畚(烧氧基苯基) 膦(tris(alkoxy phenyl)phosphine)、三萘基膦(trinaphthyl phosphine)、畚(苄基)膦(tris(benzyl) phosphine)等之在芳香 環上不取代或存在有烷基、烷氧基等取代基者,作為烷基、 烷氧基等取代基,則可舉出具有1〜6碳數者。就取得容易度 之觀點而言,較佳為三苯基麟。 又’作為膦化合物與醌化合物之加成物中所使用之g昆化合 物’可列舉有鄰苯并醒(ο-benzoquinone)、對苯并酿 (p-benzoquinone)、蒽酿i類(anthraquinone),其中,就保存安 定性而言,以對苯并醌為佳。 作為膦化合物與靦化合物之加成物之製造方法,可藉由在 可以溶解有機三級膦與苯并醌類雙方之溶媒中經由接觸、混 合而獲得加成物。作為溶媒,較佳的是丙蒙](acetone)或甲基 乙基酮(methyl ethyl ketone)等酮類之對於加成物的溶解性 低者。但是並未限定於此。 關於一般式(5)所示之化合物,係鍵結於磷原子之R21、 R22及R23為苯基,且R24、R25及R26為氫原子之化合物, 亦即,就可使半導體在、封用樹脂組成物之硬化物的加熱彈性 模數降低方面而言,以使1,4-苯并醌與三苯基膦加成之化合 物為佳。作為鱗化合物與石夕炫化合物之加成物,例如可舉出 有以下述一般式(6)所示之化合物等。 [化6] 100129155 27 201213112 R28S 201213112 (triphenyl) phosphine, tris (alkoxy phenyl) phosphine, trinaphthyl phosphine, benzyl (benzyl) phosphine (tris(benzyl) phosphine) or the like which is not substituted on the aromatic ring or has a substituent such as an alkyl group or an alkoxy group, and examples of the substituent such as an alkyl group or an alkoxy group include a carbon number of 1 to 6 By. From the viewpoint of easiness of availability, triphenyl phenyl is preferred. Further, 'g-quinone compound used as an adduct of a phosphine compound and a ruthenium compound' may be exemplified by ο-benzoquinone, p-benzoquinone, or anthraquinone. Among them, in terms of preservation stability, it is preferred to use benzopyrene. As a method for producing an adduct of a phosphine compound and a hydrazine compound, an adduct can be obtained by contact and mixing in a solvent in which both an organic tertiary phosphine and a benzopyrene can be dissolved. As the solvent, a ketone such as acetone or methyl ethyl ketone is preferred as a solvent having a low solubility in an adduct. However, it is not limited to this. The compound represented by the general formula (5) is a compound in which R21, R22 and R23 which are bonded to a phosphorus atom are a phenyl group, and R24, R25 and R26 are a hydrogen atom, that is, the semiconductor can be encapsulated and sealed. In terms of lowering the heating elastic modulus of the cured product of the resin composition, a compound obtained by adding 1,4-benzofluorene to triphenylphosphine is preferred. The compound represented by the following general formula (6), etc., may be mentioned as an adduct of the squamous compound and the stalk compound. [6] 100129155 27 201213112 R28
II
R27 —P —R29R27 — P — R29
I R30 在一般式(6)中,P係表示磷原子,Si係表示矽原子。R27、 R28、R29及R30係相互獨立地表示具有芳香環或雜環之有 機基或脂肪族基,X2係表示基Y2與Y3所鍵結之有機基。 X3係表示基Y4與Y5所鍵結之有機基。Y2及Y3係表示質 子供應性基放出質子而成之基,同一分子内之基Y2及Y3 與矽原子鍵結而形成螯合物構造者。Y4及Y5係表示質子 供應性基放出質子而成之基,同一分子内之基Y4及Y5與 矽原子鍵結而形成螯合物構造者。X2及X3可相互相同, 亦可相異,Y2、Y3、Y4及Y5可相互相同,亦可相異。Z1 係具有芳香環或雜環之有機基或脂肪族基。 於一般式(6)中,作為R27、R28、R29及R30,例如可列 舉有苯基、甲基苯基、甲氧基苯基、氫苯基、萘基、氫萘基、 苄基、曱基、乙基、正丁基、正辛基及環己基等,該等之中, 以苯基、曱基苯基、曱氧基苯基、氫苯基、氫萘基等具有取 代基之芳香族基或無取代之芳香族基為佳。 又,在一般式(6)中,X2係Y2與Y3所鍵結之有機基。同 樣地,X3係基Y4與Y5所鍵結之有機基。Y2及Y3係表示 質子供應性基放出質子而成之基,同一分子内之基Y2及 Y3與矽原子鍵結而形成螯合物構造者。同樣地,Y4及Y5 100129155 28 201213112 係表示質子供應性基放出質子而成之基,同一分子内之基 Y4及Y5與矽原子鍵結而形成螯合物構造者。基X2及X3 可相互相同,亦可相異,基Y2、Y3、Y4及Y5可相互相同, 亦可相異。此類一般式(6)中之以-Y2-X2-Y3-及-Y4-X3-Y5-所示之基係質子供應體放出兩個質子而成之基所構成者,作 為質子供應體,例如可列舉有兒茶紛(catechol)、五倍子朌 (pyrogallol)、1,2-二氳萘(l,2-dihydroxynaphthalene)、2,3-二 氫萘(2,3_dihydroxynaphthalene) 、 2,2’-聯 苯紛 (2,2,-biphenol) 、 U,-聯-2_ 萘醇(l,l,-bi-2-naphthol, BIN0L)、水楊酸(salicylic acid)、1-氫-2-萘曱酸 (l-hydroxy-2-naphthoic acid) 、 3-氫-2-萘甲酸 (3-hydroxy-2-naphthoic acid)、氣冉酸(chloranilic acid)、鞣 酸(tannic add)、2-氫节基醇(2-hydroxybenzyl alC0h0l)、n 環己二醇(1,2-CyCl〇hexanedi〇l)、1,2-丙二醇(1,2_pr〇panedi〇1) 及甘油(glycerine)等。該等之中,就原料取得容易度與硬化 促進效果之均衡的觀點而言,係以兒茶酚、込孓二氫萘、2,3_ 二虱桌為較佳。 又’ -般式(6)中之Z1係、表示具有芳香環或雜環之有機基 或脂肪族基,作為該等之具體例,可列舉有甲基、乙基、丙 基、丁基、己基及辛基等脂職烴基或苯基、节基、蔡基及 聯苯基等芳香频基、縮水甘·氧丙基硫絲^胺 基丙基及乙烯鱗反紐取代鱗,料之巾,料安定性 100129155 29 201213112 方面而言,較佳為甲基、乙基、苯基、萘基及聯苯基。 作為鱗化合物與矽烷化合物之加成物之製造方法,於置入 有甲醇之燒瓶中’添加苯基三甲氧基矽烷 (phenyltrimethoxysilane)等矽烷化合物、2 3 二氫萘 (2,3-Dihydroxynaphthalene)等質子供應體並予以溶解,接著 於室溫攪拌下滴下甲氧化鈉-甲醇溶液(s〇dium meth〇xide出 methanol)。進一步對此於室溫攪拌下滴下預先所準備之四 曱基鱗侧化物(tetraphenylphosphonium bromide)等之將四取 代鱗鹵化物溶解在甲醇中之溶液,使析出結晶。將所析出之 結晶進行過濾、水洗、真空乾燥,則可獲得鱗化合物與矽烷 化合物之加成物。但是並未限定於此。 於樹脂組成物(I)中’可因應必要性在不損及特性之範圍内 添加上述成分以外之添加物。另外,樹脂組成物⑴係在不損 及特性之範圍内可適當調整原料或其配合量而獲得。 樹脂清漆(I)中所使用之溶媒係以相對於樹脂組成物(1)可 顯現出良好溶解性為佳,於不會有不良影響之範圍内,亦可 以使用貧溶媒。作為顯現出良好溶解性之溶媒,例如可舉出 有曱基乙基酮、環己酮等。樹脂清漆(I)之固形分並沒有特別 限定,較佳為樹脂組成物(I)之固形分5〇重量份以上且9〇 重量份以下,更佳為60重量份以上且80重量份以下。藉此, 可進一步提升樹脂清漆⑴對於纖維基材14之含浸性。藉由 使樹脂清漆⑴含浸於纖維基材14,並於既定溫度,例如δ〇ΐ 100129155 30 201213112 以上且200 C以下專進行乾燥’而可得到預浸體11。 硬化物之玻璃轉移溫度並沒有特別限定,較佳為21〇。〇以 上,更佳為230 C以上。又,彈性模數降低亦受到抑制之金 線的黏結性、半導體晶片之凸塊連接性亦可提高。玻璃轉移 溫度係例如可以採用熱機械分析裝置伸erm〇niechanical analysis apparatus,TMA)、動態黏彈性分析裝置(dynamic mechanical analyzer, DMA)、熱微分分析(differential thermal analysis,DSC)測量硬化物。另外,將預浸體予以硬化之條 件係例如可舉出有將預浸體11在19〇°C以上且250°C以下加 熱30分鐘以上且120分鐘以下之情形。 作為纖維基材14 ’例如可列舉有玻璃織布(woven glass cross)、玻璃不織布(nonwoven glass cross)等玻璃纖維基材、 或玻璃以外之以無機化合物為成分之織布或不織布等無機 纖維基材、芳香族聚醢胺醯亞胺樹脂(aromatic polyamide imide resin)、聚酿胺樹脂(polyamide resin)、芳香族聚S旨樹 脂(aromatic polyester resin)、聚酉旨樹脂(polyester resin)、聚 醯亞胺樹脂(polyimide resin)、氣系樹脂(fluorocarbon polymers)等以有機纖維所構成之有機纖維基材等。該等基 材之中,就強度、吸水率之觀點而言,當使用玻璃織布所代 表之玻璃纖維基材時,可使印刷佈線板之機械性強度、耐熱 性為良好者。 關於將樹脂組成物(I)含浸於纖維基材14之方法’例如可 100129155 31 201213112 舉出有將纖維基材14浸潰在樹脂清漆(I)之方法、藉由各種 塗佈機進行塗佈之方法、利用喷霧器進行吹喷之方法等。 又,也可以是在將樹脂組成物(I)含浸於纖維基材14之前, 將樹脂組成物(I)塗佈在附有基底樹脂層之金屬箔2之後,將 纖維基材14含浸於樹脂組成物⑴中。該等之中,較佳的是 將纖維基材14浸潰在樹脂清漆(I)之方法。藉此,可以提升 樹脂組成物對於纖維基材14之含浸性。另外,在將纖維基 材14浸潰於樹脂清漆⑴的情形下’可使用通常的含浸塗佈 裝置。 例如’如圖2所示般,於將滾筒狀纖維基材ι〇1捲出的同 時,使浸潰在含浸槽102之樹脂清漆(1)103中。含浸槽1〇2 係具備有浸潰滾筒1〇4(圖2中有三根),藉由浸潰滾筒1〇4 纖維基材101於樹脂清漆⑴103中連續性通過,而樹脂清漆 103含浸在纖維基材1〇1。接著,將已含浸樹脂清漆(1)1〇3 之纖維基材101往上拉到垂直方向上,並排列設至於水平方 向上,使通過面對面之一對擠壓滾筒105之間,調整樹脂清 漆(1)103對於纖維基材1〇1之含浸量。另外,也可以使用點 式滾筒來取代擠壓滾筒。其後,將樹脂清漆(1)1〇3所含浸之 纖維基材101藉由乾燥機106在既定溫度下進行加熱,除可 使所塗佈清漆中之溶劑揮發的同時,使樹脂清漆⑴103進行 半硬化,而製造預浸體lla。另外,圖2中之上部滾筒1〇8 係為了使預浸體lla可於行進方向上移動,而在與預浸體 100129155I R30 In the general formula (6), P represents a phosphorus atom, and Si represents a ruthenium atom. R27, R28, R29 and R30 each independently represent an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and X2 represents an organic group to which the group Y2 and Y3 are bonded. X3 represents an organic group to which the group Y4 and Y5 are bonded. Y2 and Y3 are groups in which a proton-donating group releases a proton, and a group Y2 and Y3 in the same molecule are bonded to a ruthenium atom to form a chelate structure. Y4 and Y5 are groups in which a proton-donating group releases a proton, and a group Y4 and Y5 in the same molecule are bonded to a ruthenium atom to form a chelate structure. X2 and X3 can be the same or different, and Y2, Y3, Y4 and Y5 can be identical to each other or different. Z1 is an organic or aliphatic group having an aromatic ring or a heterocyclic ring. In the general formula (6), examples of R27, R28, R29 and R30 include a phenyl group, a methylphenyl group, a methoxyphenyl group, a hydrogenphenyl group, a naphthyl group, a hydronaphthyl group, a benzyl group and a hydrazine group. a base, an ethyl group, an n-butyl group, an n-octyl group, a cyclohexyl group, etc., among which a aryl group, a nonylphenyl group, a decyloxyphenyl group, a hydrogen phenyl group, a hydronaphthyl group or the like has a substituent A group-based or unsubstituted aromatic group is preferred. Further, in the general formula (6), X2 is an organic group to which Y2 and Y3 are bonded. Similarly, the X3 group is an organic group to which Y4 and Y5 are bonded. Y2 and Y3 are groups in which a proton-donating group releases a proton, and a group Y2 and Y3 in the same molecule are bonded to a ruthenium atom to form a chelate structure. Similarly, Y4 and Y5 100129155 28 201213112 are groups in which a proton-donating group releases a proton, and a group Y4 and Y5 in the same molecule are bonded to a ruthenium atom to form a chelate structure. The bases X2 and X3 may be identical to each other or different from each other, and the bases Y2, Y3, Y4 and Y5 may be identical to each other or may be different. In the general formula (6), the base proton donor represented by -Y2-X2-Y3- and -Y4-X3-Y5- is composed of two protons, and is used as a proton donor. For example, catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2'- Biphenyl (2,2,-biphenol), U,-bi-2-naphthol (l,l,-bi-2-naphthol, BIN0L), salicylic acid, 1-hydro-2-naphthalene 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic add, 2-hydrogen Alkyl alcohol (2-hydroxybenzyl al C0h0l), n-cyclohexanediol (1,2-CyCl〇hexanedi〇l), 1,2-propanediol (1,2_pr〇panedi〇1), glycerine, and the like. Among these, catechol, quinone dihydronaphthalene, and 2,3_ two tables are preferred from the viewpoint of the balance between the ease of obtaining raw materials and the hardening promoting effect. Further, the Z1 system in the general formula (6) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and specific examples thereof include a methyl group, an ethyl group, a propyl group, and a butyl group. Alkyl groups such as hexyl and octyl groups, or aromatic groups such as phenyl, benzyl, zeoliyl and biphenyl, condensed ethoxypropyl propyl sulphate, and fluorene-substituted sulphate Material stability 100129155 29 201213112 In terms of aspect, a methyl group, an ethyl group, a phenyl group, a naphthyl group and a biphenyl group are preferred. As a method for producing an adduct of a scalar compound and a decane compound, a decane compound such as phenyltrimethoxysilane or 2,3-dihydroxynaphthalene or the like is added to a flask in which methanol is placed. The proton donor was dissolved and then a sodium methoxide-methanol solution (sodium meth〇xide) was added dropwise with stirring at room temperature. Further, a solution obtained by dissolving a tetra-substituted squamous halide in methanol, such as a tetraphenylphosphonium bromide prepared in advance, is added dropwise under stirring at room temperature to precipitate crystals. The precipitated crystals are filtered, washed with water, and dried in a vacuum to obtain an adduct of a scaly compound and a decane compound. However, it is not limited to this. In the resin composition (I), additives other than the above components may be added in accordance with the necessity without impairing the properties. Further, the resin composition (1) can be obtained by appropriately adjusting the raw material or the blending amount thereof within a range not impairing the properties. The solvent used in the resin varnish (I) preferably exhibits good solubility with respect to the resin composition (1), and a poor solvent can be used insofar as it does not adversely affect the range. Examples of the solvent which exhibits good solubility include mercaptoethyl ketone and cyclohexanone. The solid content of the resin varnish (I) is not particularly limited, and the solid content of the resin composition (I) is preferably 5 parts by weight or more and 9 parts by weight or less, more preferably 60 parts by weight or more and 80 parts by weight or less. Thereby, the impregnation property of the resin varnish (1) with respect to the fiber base material 14 can be further improved. The prepreg 11 can be obtained by impregnating the fiber base material 14 with the resin varnish (1) and drying it at a predetermined temperature, for example, δ 〇ΐ 100129155 30 201213112 or more and 200 C or less. The glass transition temperature of the cured product is not particularly limited, and is preferably 21 Å. More than C, more preferably 230 C or more. Further, the reduction in the modulus of elasticity is also suppressed by the adhesion of the gold wire and the bump connection property of the semiconductor wafer. The glass transition temperature can be measured, for example, by using a thermomechanical analysis apparatus (TMA), a dynamic mechanical analyzer (DMA), or a differential thermal analysis (DSC). Further, the condition for curing the prepreg is, for example, a case where the prepreg 11 is heated at 19 ° C or higher and 250 ° C or lower for 30 minutes or longer and 120 minutes or shorter. Examples of the fiber base material 14' include a glass fiber base material such as a woven glass cross or a non-woven glass cross, or an inorganic fiber base such as a woven fabric or a non-woven fabric containing an inorganic compound other than glass. Material, aromatic polyamide imide resin, polyamide resin, aromatic polyester resin, polyester resin, polyfluorene An organic fiber base material composed of an organic fiber such as a polyimide resin or a fluorocarbon polymer. Among these substrates, in terms of strength and water absorption, when a glass fiber substrate represented by a glass woven fabric is used, the mechanical strength and heat resistance of the printed wiring board can be improved. A method of impregnating the resin substrate (I) with the fiber base material 14 is exemplified by a method of impregnating the fiber base material 14 with the resin varnish (I) by a coating machine, for example, 100129155 31 201213112. The method, the method of blowing by a sprayer, and the like. Further, before the resin composition (I) is impregnated into the fibrous base material 14, the resin composition (I) may be applied to the metal foil 2 with the base resin layer, and the fibrous base material 14 may be impregnated with the resin. In the composition (1). Among these, a method of impregnating the fibrous base material 14 with the resin varnish (I) is preferred. Thereby, the impregnation property of the resin composition with respect to the fibrous base material 14 can be improved. Further, in the case where the fibrous base material 14 is impregnated into the resin varnish (1), a usual impregnation coating device can be used. For example, as shown in Fig. 2, while the roll-shaped fibrous base material ι 1 is taken up, it is impregnated into the resin varnish (1) 103 of the impregnation tank 102. The impregnation tank 1〇2 is provided with a dipping drum 1〇4 (three in FIG. 2), and the fiber substrate 101 is continuously passed through the resin varnish (1) 103 by the impregnation drum 1〇4, and the resin varnish 103 is impregnated into the fiber. The substrate was 1〇1. Next, the fiber substrate 101 which has been impregnated with the resin varnish (1) 1 〇 3 is pulled up to the vertical direction, and arranged in the horizontal direction so that the resin varnish is adjusted between the pair of face-to-face pressing rolls 105. (1) The impregnation amount of 103 on the fibrous substrate 1〇1. Alternatively, a point roller can be used instead of the squeeze roller. Thereafter, the fiber base material 101 impregnated with the resin varnish (1) 1〇3 is heated by the dryer 106 at a predetermined temperature, and the resin varnish (1) 103 is allowed to be volatilized while volatilizing the solvent in the applied varnish. Semi-hardened to produce a prepreg 11a. In addition, the upper drum 1〇8 in Fig. 2 is for moving the prepreg 11a in the traveling direction, and in the prepreg 100129155
S 32 201213112 iia之行進方向為相同方向上進行旋轉。又,使樹脂清漆 (1)103乾燥之條件係藉由使在溫度9〇t:以上且18〇它以下、 1分鐘以上且1G分鐘以下進行乾燥,則可獲得半硬化 之預淺體11 a。 • 又’那趙11a係可透聽切下步.製造方法而製 得。 (a) 將絕緣樹脂層15重疊於纖維基材14之單面或兩面上, 於減壓條件下將該等黏合之步驟 (b) 黏合後,以構成絕緣樹脂層15之絕緣樹脂成分之熔融溫 度以上的溫度進行加熱處理,以製作預浸體n之步驟 首先’針對(a)步驟進行說明。 關於〇)步驟,係在減壓條件下將絕緣樹脂層15與纖維基 材14予以黏合。 藉由在減壓條件下進行,則即便於纖維基材14内部或絕 緣樹脂層15與纖維基材14之黏合部位處存在有非填充部 分,亦可將之視為減壓空隙或實質上的真空空隙。 作為將絕緣樹脂層15與纖維基材14予以黏合之方法,並 沒有特別限定,例如,可舉出有連續性供給纖維基材14與 絕緣樹脂層15,使一邊重疊一邊進行黏合之方法。 關於(a)步驟’在絕緣樹脂層15與纖維基材14進行黏合 之際,較佳為加溫至絕緣樹脂層15之樹脂成分的流動性可 提升之溫度。藉此,可將纖維基材14與絕緣樹脂層15輕易 100129155 33 201213112 黏合。又,絕緣樹脂層15之至少一部分會溶融而含浸於纖 維基材14之内部,藉以變得可輕易獲得含浸性良好之預浸 體11。 於此作為加溫方法,並沒有特別限定,例如可適當採用 於黏合之際使用已加熱至既定溫度脂層合滾筒的方法等。作 為此處之加溫溫度,係依形成絕緣樹脂層之樹脂種類或配合 而有所不同,可於6(rc以上且15(rc以下實施。 接著’針對(b)步驟進行說明。 此(b)步驟係於⑷步驟之黏合後,以構成絕緣樹脂層15之 絕緣樹脂成分之㈣溫度以上的溫度進行加熱處理,而製作 預浸體11。 错此’可使在⑷步驟之絕緣樹脂層15與纖維基材14黏 合時所殘存之減壓空隙或實質上的真空空隙消失,而製作非 填充部分非常少或非填充部分實質上不存在之預浸體n。 作為加熱處理之方法並沒有特獅定,例如可採用熱風乾 燥裝置、紅外線加熱裝置、加熱滚筒裝置、平板狀熱碟加壓 裝置等而實施。 另外,作為本實施形態之預浸體u,也可以使用日本專 利特開2〇10-77310號公報、特開2〇〇6_326945號公報所記 載者。 再來,針對本實施形態之金屬包層積層板1之製造方法一 例進行說明。 100129155 34 201213112 在上述附有基底樹脂層之金屬箔2之基底樹脂層12上, 於使用各種塗佈裝置將樹脂清漆(I)塗佈在基底樹脂層12上 之後,將此物進行乾燥。又,藉由噴霧裴置將樹脂清漆(1) 喷霧塗佈於基底樹脂層12後,將此物進行乾燥。此時之乾 燥條件係基底樹脂層12可為半硬化(成為b平台狀態)之條 件的話即可,例如’以100°C以上且180°C以下進行乾燥為 佳。藉此,可將絕緣樹脂層15形成在基底樹脂層12上。 上述塗佈裝置並沒有特別限定,例如可採用滾筒塗佈機 (roll coater)、棒狀塗佈機(bar coater)、刮刀式塗佈機(knife coater)、凹版印刷塗佈機(gravure coater)、模型塗佈機(die coater)、點狀塗佈機(comma coater)及簾式塗佈機(curtain coater)等。該等之中’以採用模型塗佈機、刮刀式塗佈機及 點狀塗佈機之方法為佳。藉此,可以有效地製造沒有空隙、 具有均勻絕緣樹脂層15厚度之附有金屬箔的絕緣樹脂薄片 10。 關於附有金屬箔之絕緣樹脂薄片10,絕緣樹脂層15之厚 度通常設為Ιμιη以上且6〇μηι以下,較佳為5μηι以上且50μιη 以下。 如此一來,在金屬箔丨3上’準備兩個已依序積層有基底 樹脂層12及絕緣樹脂層15之附有金屬箔之絕緣樹脂薄片 10。然後,在薄片狀纖維基材14的兩面,以附有金屬箔之 絕緣樹脂薄片10之絕緣樹脂層15面對面之方式予以配置 100129155 35 201213112 (圖3(a))接^•’在真空中以加熱⑼。c以上且Mot以下、加壓 O.IMPa以上且5MPa以下之條件,由附有金屬羯之絕緣樹 m ίο的兩側予以層合’使構成絕緣樹脂層15之樹脂含 /又於纖維基材14。此時’基底樹脂層12係尚為半硬化狀態。 藉此可獲得加熱硬化前之附有金屬箱之預浸體ia(圖耶))。 ,接著,藉由將附有金屬羯之預浸體la直接加熱加壓成 形而可知到金屬包層積層板i(圖3⑽。加熱加壓成形時 之/皿度並/又有特別限定’較佳的是⑽。c以上且25代以 '^特佳的疋150C以上且23〇〇c以下。加熱加壓成形時之 i·力並/又有特別限定’以Q iMpa以上且$嫌a以下為佳, X 〇.5MPa以上且3MPa以下為特佳。冑由這些設定,可使 土,树月日層12與絕緣樹月旨層15硬化。在本實施形態中,因 為是乂附有基材之方式製作預浸體1卜故預浸體Η之表面 平滑性高’而變得可低壓成形。又,也可關應需要而於高 溫槽等中以丨机以上且3⑼。⑽下之溫度進行後硬化。 :匕金屬已層積層才反j當作核心基板來使用,可獲得印刷 布線板X使用此印刷佈線板可製造半導體裝置。以下, 就印刷佈線板、半導_置之製造方法進行說明。 圖4係例不製造使用本實施形態之金屬包層積層板1製造 P刷佈線板之方法。圖4(a)係表示以金屬包層積層板1為核 〜基板而進行電路圖案形成之内層電路基板218。 首先,使用鑽孔機對核心基板進行開孔,形成開口部 100129155S 32 201213112 The direction of travel of the iia rotates in the same direction. Moreover, the conditions for drying the resin varnish (1) 103 are obtained by drying at a temperature of 9 〇 t: or more and 18 Å or less, for 1 minute or more and 1 G minutes or less, whereby a semi-cured pre-shallow body 11 a can be obtained. . • Also, the Zhao 11a system can be made by listening to the next step and manufacturing method. (a) The insulating resin layer 15 is superposed on one surface or both surfaces of the fibrous base material 14, and the bonding step (b) is bonded under reduced pressure to form a molten resin component 15 The step of preparing the prepreg n by heat treatment at a temperature higher than the temperature is first described with respect to the step (a). In the step of 〇), the insulating resin layer 15 and the fiber base material 14 are bonded under reduced pressure. By carrying out under reduced pressure, even if there is an unfilled portion inside the fibrous base material 14 or at the bonding portion of the insulating resin layer 15 and the fibrous base material 14, it can be regarded as a reduced pressure void or substantially Vacuum gap. The method of bonding the insulating resin layer 15 to the fiber base material 14 is not particularly limited. For example, a method of continuously supplying the fiber base material 14 and the insulating resin layer 15 and bonding them while being overlapped may be mentioned. In the step (a), when the insulating resin layer 15 is bonded to the fibrous base material 14, it is preferable to increase the temperature at which the fluidity of the resin component of the insulating resin layer 15 is increased. Thereby, the fibrous base material 14 and the insulating resin layer 15 can be easily bonded to 100129155 33 201213112. Further, at least a part of the insulating resin layer 15 is melted and impregnated into the inside of the fibrous base material 14, whereby the prepreg 11 having good impregnation properties can be easily obtained. The heating method is not particularly limited, and for example, a method of heating the resin to a predetermined temperature to a predetermined temperature may be employed. The heating temperature here varies depending on the type or blending of the resin forming the insulating resin layer, and can be performed at 6 (rc or more and 15 (r or less.) Next, the step (b) will be described. The step of bonding in the step (4) is followed by heat treatment at a temperature equal to or higher than the temperature of the insulating resin component constituting the insulating resin layer 15 to prepare the prepreg 11. This may cause the insulating resin layer 15 in the step (4). The reduced pressure void or the substantially vacuum void remaining when it is bonded to the fibrous base material 14 disappears, and the prepreg n having substantially no non-filled portions or substantially non-filled portions is produced. The lion's body can be implemented by, for example, a hot air drying device, an infrared heating device, a heating roller device, a flat hot plate pressing device, etc. Further, as the prepreg u of the present embodiment, Japanese Patent Laid-Open No. 2 can also be used. An example of the method of manufacturing the metal clad laminate 1 of the present embodiment will be described. 100129155 34 2012 13112 On the base resin layer 12 of the metal foil 2 with the base resin layer described above, after the resin varnish (I) is applied onto the base resin layer 12 using various coating devices, the material is dried. The resin varnish (1) is spray-coated on the base resin layer 12 by a spray coating, and the material is dried. The drying conditions at this time are such that the base resin layer 12 can be semi-hardened (become a b-plate state). For example, it is preferable to perform drying at 100 ° C or more and 180 ° C or less. Thereby, the insulating resin layer 15 can be formed on the base resin layer 12. The above coating device is not particularly limited, and for example, a roller can be used. A roll coater, a bar coater, a knife coater, a gravure coater, a die coater, a dot coater A comma coater, a curtain coater, etc. It is preferable to use a mold coater, a knife coater, and a spot coater. Effectively manufacturing without voids, having a uniform insulating resin layer 15 thickness In the insulating resin sheet 10 with a metal foil, the thickness of the insulating resin layer 15 is usually Ιμηη or more and 6〇μηι or less, preferably 5μηι or more and 50μηη or less. On the metal foil crucible 3, two metal foil-attached insulating resin sheets 10 which are sequentially laminated with the base resin layer 12 and the insulating resin layer 15 are prepared. Then, on both sides of the sheet-like fibrous base material 14, The insulating resin layer 15 of the insulating foil 10 having the metal foil is disposed face to face 100129155 35 201213112 (Fig. 3(a)) is heated in a vacuum (9). The conditions of c or more and Mot or less, and the pressure of O.IMPa or more and 5 MPa or less are laminated by both sides of the insulating tree m ο 附 with metal enamel'. The resin constituting the insulating resin layer 15 is contained in the fiber substrate. 14. At this time, the underlying resin layer 12 is still in a semi-hardened state. Thereby, a metal box-attached prepreg ia (Tuyer) before heat hardening can be obtained. Then, the metal clad laminate i is obtained by directly heating and press-molding the prepreg la provided with the metal crucible (Fig. 3 (10). The degree of heating/pressure forming and/or special limitation is more] It is preferable that (10). c or more and 25 generations are '^ particularly good 疋 150C or more and 23 〇〇 c or less. The heat and pressure forming i · force and / have a special limit ' to Q iMpa or more and $ a The following is preferable, and X 〇. 5 MPa or more and 3 MPa or less are particularly preferable. From these settings, the soil, the tree layer 12 and the insulating tree layer 15 can be hardened. In the present embodiment, since In the case of the substrate, the prepreg 1 is produced, so that the surface of the prepreg is high in smoothness, and it can be formed at a low pressure. Further, it can be used in a high temperature bath or the like in a high temperature tank or the like and 3 (9). The temperature is post-hardened. The laminate of the base metal is used as the core substrate, and the printed wiring board can be used. The printed wiring board can be used to manufacture a semiconductor device. Hereinafter, the printed wiring board and the semiconductor package are placed. The manufacturing method will be described. Fig. 4 is not a manufacturing method using the metal clad laminate 1 of the present embodiment. Fig. 4(a) shows an inner layer circuit board 218 in which a circuit pattern is formed by using a metal clad laminate 1 as a core to a substrate. First, a core substrate is bored using a drill to form a hole. Opening 100129155
36 S 201213112 221。可對開口後之樹脂殘渣 鹽等氧化劑等予以去除之除料理,料:=2絡酸 屬包層積層板1當作核心基板 :只施形態之金 ,亦可轉縣賴㈣㈣料除渣處理後 - /、盎屬泊13之接點姓。 然後,藉由無電解雌,對開口部22ι 求内層電路基板218兩面之導 1敷處理,谋 金屬以财丨⑥ 妾著,透過將核心基板之 金屬消13予以蝕刻,而形成内層電路217。 另外,可將内層電路基板218之内 王f奪相彳卜声搜。艾,P卩Γ7加 "電路分進行黑化處 理專粗化處理。又,開π部221係可利 漿適當填埋。 ,水或樹脂糊 内層電路217之材質係以於内層電路形成時可藉由則 或剝離衫法予U去除騎。關於㈣,叫對 用之藥液等具㈣藥品性者為隹。為了使此類_電路2 形成,金職13之材質係可選擇例如㈣、銅板、銅人全 板、合金及鎳等。尤其是,、銅板及銅合金板係不僅: 選擇電麻敷品或壓延品,亦因為各種厚度者⑽㈣彳^ 故以作為内層電路217來使用為最好。 • 接著,將依序在金屬羯U上積層有基底樹脂層12及絕緣 *樹脂層15之附有金屬箱之絕緣樹脂薄片!G的絕緣樹脂層 15設為内層電路基板218側,並以覆蓋内層電路217之二 式予以積層(圖4(b))。印刷佈線板用積層材料之積層(層合) 方法係以採用真空壓‘、常壓層合器及於真空下進行加熱力 100129155 37 201213112 壓之層合H以積層之方法為佳,更㈣是制於真空下進 行加熱加壓之層合器予以積層之方法。 其次,藉由將所形成之絕緣樹脂層15予以加熱而使硬 化使硬化之溫度並沒有特別限定,較佳為100〇c以上且 250C以下之範圍。特佳為15〇°c以上且23〇。〇以下。又為 了後續的雷射照射及輕易進行樹脂殘渣之去除,亦可預先設 為半硬化狀悲。又,以較通常加熱溫度為低之溫度將第一層 的絕緣樹脂層15進行加熱,藉以使局部硬化(半硬化),再 透過將一層或複數層基底樹脂層12進一步形成在基底樹脂 層12上’並在實用半硬化之絕緣樹脂層15上沒有問題的程 度下使再度加熱硬化,藉此可提升絕緣樹脂層15間及絕緣 樹脂層15與電路之密黏力。此時之半硬化溫度係以8〇r以 上且200 C以下為佳’以100 C以上且180°C以下為更佳。 再接著’藉由既定蝕刻法將金屬箔13予以蝕刻,而形成 開口部222a(圖4(c))。然後’對露出於此開口部222a之底 部的絕緣樹脂層15進行雷射照射,而形成孔洞開口部 222(圖4(d))。上述雷射係可使用準分子雷射(excimer laser)、UV 雷射(UV laser)及碳酸氣體雷射(carb〇I1 dioxide laser)等。上述雷射所造成之孔洞開口部222之形成係絕緣 樹脂層15之材質與感光性/非感光性沒有關係,而可輕易形 成細微孔洞開口部222。因此’在必要於絕緣樹脂層丨5上 形成細微開口部時為特佳。 100129155 38 201213112 另外,可對雷射照射後之樹脂殘渣等進行藉由過錳酸鹽、 重鉻酸鹽等氧化劑等予以去除之除渣處理(desmear treatment)。藉由除渣處理,可同時將平滑的絕緣樹脂層15 之表面予以粗化’可提升透過後續金屬鑛敷所形成之導電佈 '線電路的密黏性。若根據本實施形態之附有金屬箱之絕緣樹 脂薄片10,則在除渣處理後可維持著基底樹脂層12與外層 電路220之接黏性。於基底樹脂層12之表面上,因為在除 渣處理中均勻施有細微凹凸形狀,而可提升與外層電路220 之密黏性。又,因絕緣樹脂層表面之平滑性高,故可精度佳 地形成細微佈線電路。 然後,透過金屬鍍敷以謀求絕緣樹脂層間之連接,藉由蝕 刻而形成外層電路220(圖4(e))。外層電路220之形成方法 係例如可依屬於公知方法之半加成法等予以形成,但是本發 明並未限定於此。其次,形成導體短柱(p〇st)223(圖5(a))。 作為導體短柱223之形成方法,可依屬於公知方法之電解鍍 敷等予以形成。例如,將外層電路220當作為電解鍍敷用引 線,進行銅電解鍍敷,則可用銅填充孔洞開口部222内形成 銅短柱。 此外’藉由反覆進行圖4(b)〜(e)、圖5(a)所示步驟,則可 形成為多層。另外,於依上述將絕緣樹脂層15作成半硬化 狀態之情形下’亦有進行後硬化(p〇stcUre)之情形。 接下來,形成焊錫阻抗224(圖5(b))。另外,在圖5(b)中, 100129155 39 201213112 藉由反覆進行圖4(b)〜(e)、圖5⑷所示步驟,則可形成為具 備絕緣樹脂層15兩層之多層構造。 ‘ 焊錫阻抗224之形成方法並沒有特別限心例如可透過乾 式缚膜型式之將焊锡阻抗料層合,並藉由曝光及顯影而形 成之方法、或將印财錄随者藉㈣光錢⑽形成之 方法而形成。另外’連接㈣極部係可適#以鍍金、麟及 焊錫鍍敷等金屬皮料以錢。藉由_方法,可製造印刷 佈線板。 另外’當使用已使用較厚銅羯之附有金屬箱之絕緣樹脂薄 片H)時’因為在其後續電路圖案製作巾變得難 最佳化,故也會有使用_以上且5_χ下之極薄銅箱、 或將12㈣以上且18卿以下之銅⑽刻為薄至_以上且 一以下(進行半㈣)的情形。又,亦有將㈣與絕緣層一 ,開孔之情形。此時’鋼⑼使用較薄者、半飯刻或極薄銅 V白0 接著,針對料糾㈣絲在依以 板而成之半導體裝置進行佈線 裝置-例的剖面圖。兒明。圖6係表示所獲得之半導體 如圖6所示般,在印刷佈線板226之單面上,設置有複數 鑛接用電Γ,。此印刷佈線板之具有對應於連接用電 極。Ρ 327所„又置之焊锡凸塊汹的半導體元件似係經由焊 錫凸塊329而被連接至印刷佈線板π6。 100129155 201213112 然後’在印刷佈線板挪與半導體元件3 狀密封樹脂330,而形成半導體裝置32 卩:= ㈣係在内層電路基板218上具備有内層電路二: 層15、基底樹脂層12及外層電路220。内層電路2] 與外層電路_經由導體短柱223而被連接著^ = 樹脂層15係以焊錫阻抗224覆蓋著。 緣 _塊汹較佳係以包含錫(Sn)、錯⑽)、銀(⑽、綱 u、峨)等之合金而構成。半導體元件3 缘 板以之連接方法係採用倒裝晶片打線機等,在進狀^ 之連接用電極部與半導體元件之對位後,❹= 置、熱板、其他加熱裝置將焊錫凸塊329加熱至融點以上: 並透過將基板上之印刷佈線板226與焊錫凸塊329予以 接合而連接。另外,為了改善連接可靠性,亦可以預: 锡糊聚等融點相對較低之金屬層形成於印刷佈線板226 2 =用電極部上。在此接合步驟前,亦可藉由焊錫凸塊及/ 或將助焊·佈於印刷佈線板上之連接㈣ 而提升連接性。 衣層上 接下來’針對本實施形態之仙效果根據圖丨進行說明 若根據本實施㈣,敎細熱硬鎌_、無機填充材為 必要成分而含有之難體11與金屬㈣之間介隔存在有薄 基底樹脂層12’而可使預浸體u與金屬13絲。因此, 在將金屬落料_而進行佈線加工或對預浸體上進行金 100129155 2〇1213112 屬鐵敷處理等的卒導體裝置製造製程中,可使預浸體表面之 對於金屬之接黏力降低的疑慮消失’而成為可使預浸體u 與金屬層強力接合。特別是本實施形態之金屬包層積層板1 係因吸濕性及耐熱性優越,故而可使於12TC、濕度100% 之條件下處理72小時後之剝離強度(N,)為0.7kN/m以上且 ISkN/m以下。又’吸濕高熱處理前之剝離強度(N)與吸濕 高熱處理後之剝離強度(ΚΓ)的差(ΔΝ)可為0.01kN/m以上且 〇-2kN/m 以下。 又,在本實施形態中’在預浸體11之熱硬化成分中含有 氰酸酯樹脂之情形係以於基底樹脂層12中均不含有具有一 級胺基之化合物及具有二級胺基之化合物為佳。當使用具有 —級胺基之化合物及具有二級胺基般之反應性高之胺基的 化合物時,會有基底樹脂層12中之胺基促進氰酸酯樹脂隻 硬化的情形。於此,例如矽烷偶合劑,相較於胺基矽烷偶合 劑,以使用環氧矽烷偶合劑為佳。藉此,環氧矽烷會與氰酸 酯樹脂適當詰合而且因為沒有硬化促進作用,故會於基底 樹脂層12與預浸體^之間產生化學鍵結。因此,可強化在 預浸體11與基底樹脂層12之界面的接黏力。 又,於本實施形態中,較佳的是使奈米二氧化石夕粒子含於 基底樹脂層12中。藉此,可得到低熱膨脹與低吸水之效果。 另外,在本實施形態中,藉由控制錢偶合劑與奈米二氧化 石夕粒子之配合#,則可^奈米二氧切粒子之凝集,可作 42 10012915536 S 201213112 221. The oxidizing agent such as the resin residue salt after the opening can be removed, and the material is: = 2 lignin is a clad laminate 1 as the core substrate: only the form of gold can be used, and the slag can be transferred to the county (four) (four) After - /, the name of the contact point of the 13th. Then, by the electroless female, the opening 22ng is subjected to the conduction treatment on both sides of the inner layer circuit board 218, and the metal is etched by the metal, and the inner layer circuit 217 is formed by etching the metal of the core substrate. In addition, the inner circuit board 218 can be used to capture the sound. Ai, P卩Γ7 plus " circuit points for blackening treatment special roughing. Further, the opening π portion 221 is suitable for proper filling of the slurry. The water or resin paste inner layer circuit 217 is made of a material which can be removed by U or by a peeling method when the inner layer circuit is formed. (4) It is called 对 用 用 ( 用 用 ( ( 隹 隹 隹 隹 隹 隹 隹 隹 隹 隹 隹In order to form such a circuit 2, the material of the gold member 13 can be selected, for example, as (4), a copper plate, a copper plate, an alloy, and a nickel. In particular, the copper plate and the copper alloy plate are not only: the choice of the electric anesthetic or the rolled product, but also the inner layer circuit 217 is preferably used because of various thicknesses (10) and (4). • Next, a base resin layer 12 and an insulating resin sheet with a metal case attached to the insulating resin layer 15 are laminated on the metal crucible U in order! The insulating resin layer 15 of G is set to the side of the inner layer circuit substrate 218, and is laminated by covering the inner layer circuit 217 (Fig. 4(b)). The method of laminating (lamination) of the laminated material for printed wiring boards is preferably carried out by vacuum pressing, atmospheric lamination, and heating under vacuum 100129155 37 201213112. The method of laminating H is preferable, and (4) A method of laminating a laminate which is heated and pressurized under vacuum. The temperature at which the insulating resin layer 15 is formed by heating to harden is not particularly limited, but is preferably in the range of 100 〇 c or more and 250 ° C or less. It is especially good for 15〇°c and 23〇. 〇The following. In addition, for the subsequent laser irradiation and easy removal of the resin residue, it is also possible to set the semi-hardened sorrow in advance. Further, the insulating resin layer 15 of the first layer is heated at a temperature lower than the usual heating temperature, whereby local hardening (semi-hardening) is performed, and further, one or a plurality of layers of the base resin layer 12 are further formed on the base resin layer 12. The upper portion is reheat-hardened to the extent that there is no problem in the practical semi-hardened insulating resin layer 15, whereby the adhesion between the insulating resin layers 15 and the insulating resin layer 15 and the circuit can be improved. The semi-hardening temperature at this time is preferably 8 Torr or more and 200 C or less. It is more preferably 100 C or more and 180 ° C or less. Then, the metal foil 13 is etched by a predetermined etching method to form an opening portion 222a (Fig. 4(c)). Then, the insulating resin layer 15 exposed at the bottom of the opening 222a is subjected to laser irradiation to form a hole opening portion 222 (Fig. 4 (d)). As the above-mentioned laser system, an excimer laser, a UV laser, a carb〇I1 dioxide laser, or the like can be used. The hole opening portion 222 formed by the above-described laser is formed so that the material of the insulating resin layer 15 is not related to the photosensitivity/non-photosensitivity, and the fine hole opening portion 222 can be easily formed. Therefore, it is particularly preferable to form a fine opening portion on the insulating resin layer 丨5. 100129155 38 201213112 In addition, a resin residue or the like after laser irradiation can be subjected to a desmear treatment by removing an oxidizing agent such as permanganate or dichromate. By the slag removal treatment, the surface of the smooth insulating resin layer 15 can be roughened at the same time, and the adhesion of the conductive wiring formed by the subsequent metal ore can be improved. According to the insulating resin sheet 10 to which the metal case is attached according to the embodiment, the adhesion between the base resin layer 12 and the outer layer circuit 220 can be maintained after the dross removal treatment. On the surface of the base resin layer 12, since the fine uneven shape is uniformly applied in the slag removal treatment, the adhesion to the outer layer circuit 220 can be improved. Further, since the surface of the insulating resin layer has high smoothness, the fine wiring circuit can be formed with high precision. Then, the outer layer circuit 220 is formed by etching by metal plating to achieve connection between the insulating resin layers (Fig. 4(e)). The method of forming the outer layer circuit 220 can be formed, for example, by a semi-additive method or the like according to a known method, but the present invention is not limited thereto. Next, a conductor stub (p〇st) 223 is formed (Fig. 5(a)). The method of forming the conductor stub 223 can be formed by electrolytic plating or the like according to a known method. For example, when the outer layer circuit 220 is used as a lead for electrolytic plating and copper electrolytic plating is performed, a copper stub can be formed in the hole opening portion 222 filled with copper. Further, by repeating the steps shown in Figs. 4(b) to (e) and Fig. 5(a), a plurality of layers can be formed. Further, in the case where the insulating resin layer 15 is made into a semi-hardened state as described above, there is also a case where post-hardening (p〇stcUre) is performed. Next, a solder resistance 224 is formed (Fig. 5(b)). Further, in Fig. 5(b), 100129155 39 201213112 can be formed into a multilayer structure having two layers of the insulating resin layer 15 by repeating the steps shown in Figs. 4(b) to 4(e) and 5(4). The method of forming the solder resist 224 is not particularly limited. For example, a method of laminating a solder resist material by a dry type of a film can be formed by exposure and development, or a method can be used to borrow (4) light money (10) Formed by the method of formation. In addition, the connection (4) is suitable for metal materials such as gold plating, lining and solder plating. A printed wiring board can be manufactured by the method. In addition, 'when the insulating resin sheet H with a thick metal enamel attached to the metal box is used, 'because it is difficult to optimize the tape in its subsequent circuit pattern, it will be used more than _ above and 5_ A thin copper box or a case where 12 (four) or more and 18 or less copper (10) are thinned to _ or more and one or less (half (four)). In addition, there are cases where (4) and the insulating layer are opened. At this time, the steel (9) is a thinner, half-cooked or extremely thin copper V white 0. Next, a cross-sectional view of a wiring device is performed on a semiconductor device in which a material is corrected. Children. Fig. 6 is a view showing the obtained semiconductor. As shown in Fig. 6, a plurality of electric pick-up electrodes are provided on one surface of the printed wiring board 226. This printed wiring board has an electrode corresponding to the connection. The semiconductor element of the solder bump 汹 is also connected to the printed wiring board π6 via the solder bump 329. 100129155 201213112 Then, the semiconductor element is sealed with the semiconductor element 3 in the printed wiring board. The semiconductor device 32 卩:= (4) The inner layer circuit board 218 is provided with an inner layer circuit 2: a layer 15, a base resin layer 12, and an outer layer circuit 220. The inner layer circuit 2] and the outer layer circuit _ are connected via the conductor stub 223 = The resin layer 15 is covered with a solder resist 224. The edge block is preferably made of an alloy containing tin (Sn), erbium (10), silver ((10), bismuth, bismuth). In the connection method, a flip chip bonding machine or the like is used, and after the electrode portion for connection of the electrode is aligned with the semiconductor element, the solder bump 329 is heated to a melting point or higher by a heat sink or another heating device. And connecting by connecting the printed wiring board 226 on the substrate and the solder bumps 329. In addition, in order to improve the connection reliability, it is also possible to form a metal layer having a relatively low melting point such as tin paste on the printed wiring board. 226 2 = electricity In the above, before the bonding step, the connection can be improved by solder bumps and/or the connection (4) of the soldering/wiring on the printed wiring board. The coating layer is next to the effect of the embodiment. According to the figure (4), according to the fourth embodiment, the thin hard resin layer _, the inorganic filler is an essential component, and the hard base 11 and the metal (four) are interposed with a thin base resin layer 12' to allow prepreg. The body u and the metal 13 wire. Therefore, the prepreg surface can be used in the manufacturing process of the conductor device in which the metal is blanked and the wire is processed or the gold is applied to the prepreg 100129155 2〇1213112. In the case where the adhesion of the metal is reduced, the prepreg u and the metal layer are strongly bonded. In particular, the metal clad laminate 1 of the present embodiment is excellent in hygroscopicity and heat resistance. The peel strength (N,) after treatment at 12 TC and 100% humidity for 72 hours was 0.7 kN/m or more and ISKN/m or less. Further, the peel strength (N) before moisture absorption and high heat treatment and moisture absorption and high heat absorption The difference (ΔΝ) of the peel strength (ΚΓ) after the treatment may be In the present embodiment, the case where the cyanate resin is contained in the thermosetting component of the prepreg 11 is not contained in the underlying resin layer 12, and is not included in the present embodiment. The compound of the primary amino group and the compound having a secondary amine group are preferred. When a compound having a -amino group-based compound and a highly reactive amine group having a secondary amine group is used, there is a base resin layer 12 The amine group promotes the curing of the cyanate resin only. Here, for example, a decane coupling agent is preferably an epoxy decane coupling agent as compared with the amino decane coupling agent, whereby the epoxy decane and the cyanic acid are used. The ester resin is appropriately kneaded and, because there is no hardening promoting action, a chemical bond is formed between the base resin layer 12 and the prepreg. Therefore, the adhesion at the interface between the prepreg 11 and the base resin layer 12 can be enhanced. Further, in the present embodiment, it is preferred that the nano-sized dioxide particles are contained in the base resin layer 12. Thereby, the effect of low thermal expansion and low water absorption can be obtained. Further, in the present embodiment, by controlling the combination of the money coupling agent and the nano smectite particles, the aggregation of the nano dioxin particles can be performed as 42 100129155.
S 201213112 成均勻分散於基底樹脂層12中之金屬包層積層板】。 (第二實施形態) 圖7係本實施形態之金屬包層積層板3(或也可以說是加 . 熱硬化前之附有金屬箱之預浸體3a)的示意性剖面圖。如圖 7所示般,本實施形態之金屬包層積層板3係在金屬箔Η 上依序積層有基底樹脂層12與構成印刷佈線板之絕緣層的 絕緣樹脂層15而成。另外,基底樹脂層12、金屬箔13及 絕緣樹脂層15係因可使用與第一實施形態相同者,故以下 省略說明。 以下’使用圖8針對本實施形態之金屬包層積層板之製造 方法進行說明。首先,調製用以作成基底樹脂層12及絕緣 樹脂層15所使用之樹脂組成物(I)、(11)。基底樹脂層12用 之樹脂組成物(II)係將在第一實施形態中所說明基底樹脂層 12中所含有之各個成分於丙酮(acet〇ne)、曱基乙基酮 (methylethyl ketone)、曱基異 丁基酮(methylisobutyl ketone)、甲苯(toluene)、醋酸乙酯(ethyl acetate)、環己烷 (cyclohexane)、庚炫(heptane)、環己酿j(cyclohexanone)、四 氫咬喃 (tetrahydrofurane)、 二甲基曱醯胺 (dimethylformamide)、二曱基乙酿胺(dimethylacetamide)、 二甲基石風(dimethyl sulfoxide)、乙二醇(ethylene glycol)、賽 路蘇系(Cellosolve)、卡必醇(carbitol)、茴香il(anisole)等有 機溶劑中,使用超音速分散方式、高壓衝突式分散方式、高 100129155 43 201213112 速方疋轉分散方式、珠磨 式分散方式等各種混合 脂清漆(I)。 方式、高速切斷分散方式及自轉公轉 機進行溶解、混合、攪拌而可獲得樹 — ⑽奶旨層15用之樹雜成物⑴也是-樣將於第-貫卿態所說明之絕緣樹脂層15中所含有之上述各成分進 仃相同處理’而可獲得樹脂清漆(I)。 其次’採用各種塗佈I置將樹脂清漆(II)塗佈在剝離薄片 =上後m或者是,利时齡置將旨清漆(11) 紛塗佈至_以16上後,將之賴。藉此,可在剝離 *專片16上$成基底樹脂層12。接著,採用各種塗佈裝置將 ft月曰π漆⑴塗佈在基底樹脂I 12上後,將之乾燥。或者是, 利用喷霧裝置將樹脂清漆猶霧塗佈至基底樹脂層12上 後,將之乾燥。藉此,可在基底樹脂層12上形成絕緣樹脂 層15。 經由如此準備在剝離薄片16上依序積層有基底樹脂層12 及絕緣樹脂層15之附有第一薄膜之絕緣樹脂薄片31。再 來’準備在剝離薄片16上僅積層有絕緣樹脂層15之有第二 薄膜之絕緣樹脂薄片32。 作為剝離薄片16,例如可列舉有聚對苯二甲酸乙二酯 (polyethylene terephthalate)、聚對苯二曱酸 丁二酯 (polybuthylene terephthalate)等聚g旨樹脂(polyester resins)、 氟系樹脂(fluorocarbon polymers)、聚醢亞胺樹脂(polyimide 100129155 44 s 201213112 re_)等具有耐熱性之熱可塑性樹脂薄膜等。該等薄膜之 ::底樹脂層12之接黏性及剝離性之均衡的觀點而 σ X佳為以聚醋所構成之薄膜。 剝離厚片16之厚度並沒有特別限定,通常為l〇Mm以上 卿以下,較佳為2〇/mi以上且乃闽以下。當剝離薄 片16之厚度在上述範_時’係操作容易,且絕緣樹脂層 15之平垣性優越。 接著以絕緣樹脂層15面對面之方式,將附有薄膜之絕 緣樹脂薄片3卜32配置於薄片狀纖維基材14的兩面上(圖 8(a))。剝離薄片16係因為隔著基底樹脂層12而積層有絕緣 樹脂層15 ’故較佳為選擇在積層時之操作容易者。又,第 二附有薄膜之絕緣樹脂薄片3 2係因在使用於印刷佈線基板 之製造步驟的情形下’以將絕緣樹脂層15側抵接到内層電 路217之狀態下進行積層之後,使用於去除剝離薄片16之 用途上’故而以在積層後可輕易剝離者為佳。 又’第一附有薄膜之絕緣樹脂薄片31係亦可當作為在單 面上具備有構成絕緣樹脂層15之樹脂組成物(I)已含浸於纖 維基材14之剝離薄片16的附有載體之預浸體而獲得。另 外’在本實施形態中,「具備有剝離薄片丨6之附有载體之預 浸體」及「將樹脂清漆⑴含浸於纖維基材14 ’並使之乾燥 而獲得之預浸體」均可單純稱呼為「預浸體」。作為纖維基 材14之材質,可使用在第一實施形態所說明者。 100129155 45 201213112 作為附有載體之預浸體之製造方法,例如,可舉出有下述 方法.準備預先使構成絕緣樹脂層15之樹脂清漆⑴含浸於 纖維基材14,藉由加熱乾燥使溶劑揮發之預浸體π,接著 塗佈構成基底樹脂層12之樹脂清漆(Π)於預浸體11,其後’ 透過加熱乾燥使溶劑揮發,接著將剝離薄片16貼合至基底 樹脂層12而作成附有載體之預浸體的方法;在將構成絕緣 樹脂層15之樹脂清漆(I)含浸於纖維基材14之後,立即塗佈 構成基底樹脂層12之樹脂清漆⑴,其後,藉由加熱乾燥使 溶劑揮發’然後’使剝離薄片16貼合至基底樹脂層12而作 成附有載體之預浸體的方法。 作為使樹脂清漆(I)含浸於纖維基材14之方法,可採用在 第一實施形態所說明之方法。 接下來’在真空中以加熱6〇1以上且l3〇°c以下、加壓 O.IMPa以上且5MPa以下之條件,從附有薄膜之絕緣樹脂 薄片兩側予以層合,使構成絕緣樹脂層15之樹脂組成物(I) 含浸於纖維基材14。藉此,可獲得附有載體之預浸體42(圖 8(b))。接著,將附有載體之預浸體42之剝離薄片π予以剝 離而獲得預浸體11(圖8(c))。然後,以彼此面對面的方式將 兩個預浸體11之絕緣樹脂層15予以配置的同時,以面對面 的方式配置基底樹脂層12與金屬箔13(圖8(d))。接著’透 過由兩側進行加熱加壓成形以獲得金屬包層積層板3(圖 8(e))。另外,金屬箔13係如於第一實施形態中所說明般, 100129155 46S 201213112 is a metal clad laminate uniformly dispersed in the base resin layer 12]. (Second Embodiment) Fig. 7 is a schematic cross-sectional view showing a metal clad laminate 3 of the present embodiment (or a prepreg 3a with a metal case before heat hardening). As shown in Fig. 7, the metal clad laminate 3 of the present embodiment is formed by sequentially laminating a base resin layer 12 and an insulating resin layer 15 constituting an insulating layer of a printed wiring board on a metal foil. Further, since the base resin layer 12, the metal foil 13, and the insulating resin layer 15 can be used in the same manner as in the first embodiment, the description thereof will be omitted below. Hereinafter, a method of manufacturing the metal clad laminate according to the present embodiment will be described with reference to Fig. 8 . First, the resin compositions (I) and (11) used for the base resin layer 12 and the insulating resin layer 15 are prepared. In the resin composition (II) for the base resin layer 12, each component contained in the base resin layer 12 described in the first embodiment is acetone (acetatene) or methylethyl ketone. Methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexanone, tetrahydroanthracene Tetrahydrofurane), dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, Cellosolve, card In organic solvents such as carbitol and anisole, various mixed grease varnishes such as supersonic dispersion method, high-pressure conflict dispersion method, high-speed 100129155 43 201213112, high-speed twist dispersion method, and bead mill dispersion method are used ( I). The method, the high-speed cutting and dispersing method, and the spinning and revolving machine are dissolved, mixed, and stirred to obtain a tree. (10) The tree-like product (1) of the milk layer 15 is also an insulating resin layer as described in the first embodiment. The resin varnish (I) can be obtained by subjecting each of the above components contained in 15 to the same treatment. Next, the resin varnish (II) is applied to the release sheet by using various coatings I. After the application, the varnish (11) is applied to _16, and then it is applied. Thereby, the base resin layer 12 can be formed on the release sheet 100. Next, ft 曰 π lacquer (1) was applied onto the base resin I 12 by various coating means, and then dried. Alternatively, the resin varnish is applied to the base resin layer 12 by a spray device, and then dried. Thereby, the insulating resin layer 15 can be formed on the base resin layer 12. The insulating resin sheet 31 with the first film attached to the base resin layer 12 and the insulating resin layer 15 is sequentially laminated on the release sheet 16 in this manner. Further, the insulating resin sheet 32 having the second film of the insulating resin layer 15 laminated on the release sheet 16 is prepared. Examples of the release sheet 16 include polyester resins such as polyethylene terephthalate and polybutylylene terephthalate, and fluorocarbon resins. Polymeric thermoplastic resin film having heat resistance such as polyimine resin (polyimide 100129155 44 s 201213112 re_). From the viewpoint of the balance between the adhesion and the releasability of the film-based bottom layer 12 of the film, σ X is preferably a film composed of polyester. The thickness of the peeling slab 16 is not particularly limited, and is usually not more than 1 Mm, preferably 2 Å/mi or more. When the thickness of the peeling sheet 16 is easy to operate at the above-described range, the insulating resin layer 15 is excellent in flatness. Then, the insulating resin sheet 3 with the film is placed on both surfaces of the sheet-like fibrous base material 14 so that the insulating resin layer 15 faces the surface (Fig. 8(a)). The release sheet 16 is formed by laminating the insulating resin layer 15 with the base resin layer 12 interposed therebetween. Therefore, it is preferable to select an operation at the time of lamination. In addition, the second insulating film 3 2 with a film is used for laminating in a state in which the insulating resin layer 15 side is brought into contact with the inner layer circuit 217 in the case of the manufacturing process for the printed wiring board. It is preferable to remove the release sheet 16 so that it can be easily peeled off after lamination. Further, the first insulating film 31 with a film attached thereto may be a carrier with a release sheet 16 on which a resin composition (I) constituting the insulating resin layer 15 is impregnated on the fiber substrate 14 Obtained from the prepreg. In the present embodiment, the "prepreg having the carrier with the release sheet bundle 6" and the "prepreg obtained by impregnating the resin substrate (1) with the fiber substrate 14' and drying it" It can be simply referred to as a "prepreg". As the material of the fiber base 14, the one described in the first embodiment can be used. 100129155 45 201213112 As a method for producing a prepreg with a carrier, for example, a method of preparing a resin varnish (1) constituting the insulating resin layer 15 in advance to impregnate the fiber base material 14 with a solvent by heating and drying is prepared. The volatilized prepreg π is applied, followed by coating a resin varnish constituting the base resin layer 12 on the prepreg 11, followed by 'drying by heat drying to volatilize the solvent, and then attaching the release sheet 16 to the base resin layer 12 A method of forming a prepreg with a carrier; after impregnating the resin varnish (I) constituting the insulating resin layer 15 with the fibrous base material 14, the resin varnish (1) constituting the base resin layer 12 is applied immediately, and thereafter, The method of heating and drying to volatilize the solvent 'then' to attach the release sheet 16 to the base resin layer 12 to form a prepreg with a carrier. As a method of impregnating the resin varnish (I) with the fibrous base material 14, the method described in the first embodiment can be employed. Next, 'insulating the insulating resin layer from both sides of the insulating resin sheet with a film by heating in a vacuum of 6 〇 1 or more and l 3 〇 ° c or less, and pressing O.IMPa or more and 5 MPa or less. The resin composition (I) of 15 is impregnated into the fibrous base material 14. Thereby, the prepreg 42 with the carrier can be obtained (Fig. 8(b)). Next, the release sheet π of the prepreg 42 with the carrier is peeled off to obtain a prepreg 11 (Fig. 8(c)). Then, the insulating resin layers 15 of the two prepregs 11 are disposed to face each other, and the base resin layer 12 and the metal foil 13 are disposed face to face (Fig. 8(d)). Then, the metal clad laminate 3 is obtained by heat and pressure forming from both sides (Fig. 8(e)). Further, the metal foil 13 is as described in the first embodiment, 100129155 46
S 201213112 以由銅或鋁構成為佳。 進行加熱加壓成形時之溫度並沒有特別限定,較佳為 120°C以上且250°C以下,特佳為150°C以上且230°C以下。 進行加熱加壓成形時之壓力並沒有特別限定,較佳為 O.IMPa以上且5MPa以下,特佳為0.5MPa以上且3MPa以 下。於本實施形態中,因為附有基材而製作預浸體,故而預 浸體之表面平滑性高,可為低壓成形。又,因應必要性,亦 可在高溫槽等中以150°C以上且300°C以下之溫度進行後硬 化。 另外,在本實施形態中,使用將第一附有薄膜之絕緣樹脂 薄片之剝離薄片16取代為金屬箔13之附有金屬箔之樹脂薄 片31,製造兩個單面上附有金屬箔之預浸體,將剝離薄片 16予以剝離,然後藉由將絕緣樹脂層15彼此接合而亦可製 造金屬包層積層板。 又,透過使用複數個圖8(c)之預浸體11,也可以製造積 層有預浸體11三層以上之金屬包層積層板。 於本實施形態中,不用使用纖維基材14,而直接將兩個 第一附有薄膜之絕緣樹脂薄片31之絕緣樹脂層15彼此予以 接合,在將剝離薄片16予以剝離之後,藉由將金屬箔13 貼合至所露出之基底樹脂層12,則亦可製造金屬包層積層 板。 將此金屬包層積層板3當作為核心基板來使用,可獲得印 100129155 47 201213112 刷佈線板。圖9中例示有使用第一附有簿贈— 另,寻膜之絕緣樹脂薄片 31之印刷佈線板之製造方法。於圖9(幻由 表不本貫施形 態之將金屬包層積層板3當作為核心基柘 反’迷進行電路圖案 形成之内層電路基板218。核心某知 I板係例如可為在 FR-4(Flame Retardant Type)之兩面上形成鋼箔等金屬箔者。 首先’如於第一實施形態中所說明般,撻 & ί木用鑽孔機對核心 基板進行開孔而形成開口部221。接箬,Μ上 ^错由無電解鍍敷, 對開口部221進行㈣處理’以謀求内層電路基板218兩面 的導通。然後,將核心基板之銅料以叫,藉以形成 電路 217(圖 9(a))。 其次’使用附有薄膜之絕緣樹脂薄片31,以覆蓋内声電 路2Π之方式’將絕緣㈣層15當作為内層電路基板-側而積層(圖9(b))。附有薄膜之絕緣樹脂薄片η之積· 合)方法並沒有㈣限定’較佳為_真空壓製、常壓層合 器及於真空下進行加熱加壓之層合器而積層的方法。更佳為 採用在真空下進行加熱加壓之層合器的方法。 接著,如在第-實施形態中所說明般,藉由將所形成之絕 緣樹脂層15予以加熱而使硬化後,對基底樹脂層12及絕緣 樹脂層15照射雷射,以形成孔洞開口部222(圖9⑷)。 再來,形成外層電路22〇(圖9(d))。其後,進行與第一實 施形態相同之處理(圖9(e)、(〇),而可獲得印刷佈線板。 另外’以下表示製造内層電路基板218之其他方法。 100129155S 201213112 is preferably made of copper or aluminum. The temperature at the time of heat press molding is not particularly limited, but is preferably 120 ° C or more and 250 ° C or less, and particularly preferably 150 ° C or more and 230 ° C or less. The pressure at the time of heat press molding is not particularly limited, but is preferably from 0.1 MMPa to 5 MPa, particularly preferably from 0.5 MPa to 3 MPa. In the present embodiment, since the prepreg is formed by attaching the substrate, the surface of the prepreg has high surface smoothness and can be formed at a low pressure. Further, it may be post-hardened at a temperature of 150 ° C or more and 300 ° C or less in a high temperature bath or the like as necessary. Further, in the present embodiment, a metal foil-attached resin sheet 31 in which the first release film 16 of the insulating resin sheet with a film is replaced with the metal foil 13 is used, and two metal foils are attached on one side. In the dip, the release sheet 16 is peeled off, and then the metal clad laminate can be produced by bonding the insulating resin layers 15 to each other. Further, by using a plurality of prepregs 11 of Fig. 8(c), it is also possible to manufacture a metal clad laminate in which three or more layers of the prepreg 11 are laminated. In the present embodiment, the insulating resin layers 15 of the two first film-attached insulating resin sheets 31 are directly joined to each other without using the fibrous base material 14, and after the peeling sheets 16 are peeled off, the metal is removed. When the foil 13 is bonded to the exposed base resin layer 12, a metal clad laminate can also be produced. When the metal clad laminate 3 is used as a core substrate, a printed wiring board of 100129155 47 201213112 can be obtained. Fig. 9 illustrates a method of manufacturing a printed wiring board using the first insulating resin sheet 31 with a film-supplied film. In FIG. 9 (the inner layer circuit substrate 218 in which the metal clad laminate 3 is formed as a core substrate), the core board is formed by a circuit pattern. For example, the core board can be FR- A metal foil such as a steel foil is formed on both sides of the (Flame Retardant Type). First, as described in the first embodiment, the core substrate is bored by a drill and an etched wood to form an opening 221 Then, the electroless plating is performed by electroless plating, and the opening portion 221 is subjected to (four) processing to achieve conduction between both surfaces of the inner layer circuit substrate 218. Then, the copper material of the core substrate is called to form the circuit 217 (Fig. 9). (a)) Next, 'the insulating resin sheet 31 with a film is used to cover the inner acoustic circuit 2', and the insulating (four) layer 15 is laminated as the inner layer circuit board side (Fig. 9(b)). The method of insulating and insulating the insulating resin sheet η of the film does not have a method of layering a layer which is preferably a vacuum press, an atmospheric pressure laminator, and a laminate which is heated and pressurized under vacuum. More preferably, it is a method of using a laminate which is heated and pressurized under vacuum. Then, as described in the first embodiment, the insulating resin layer 15 is heated to be cured, and then the base resin layer 12 and the insulating resin layer 15 are irradiated with a laser to form a hole opening portion 222. (Fig. 9(4)). Then, the outer layer circuit 22 is formed (Fig. 9(d)). Thereafter, the same processing as in the first embodiment (Fig. 9(e), (〇)) is performed, and a printed wiring board can be obtained. Further, another method of manufacturing the inner layer circuit board 218 is shown below.
48 S 201213112 準備兩個如上所$日日 3卜然後,以附有薄膜〇第"'附有薄膜之絕緣樹脂薄片 面對面之方式配置在=緣樹脂薄片31之物 10(a)) 〇 缚片狀纖維基材Η的兩面上(圖 接著,在直空中w 0 1MP ^ 加熱6〇ΐ以上且130。(:以下、加壓 «•IMPa以上且5Μρ& 刀口& 薄片3丨兩側予以條件,魏有_之絕緣樹脂 纖維基材14。藉此,可卜構成絕緣樹脂層15之樹脂含浸於 H X件附有載體之預浸體45(圖100;);)。 接者,將附有薄膜薄片; ^ , 預次體45之剝離薄片16予以剝離 而獲侍預浸體11(圖1〇f 進 1 ))。然後,採用鑽孔機對預浸體11 進:開孔’形成開口部221(圖剛)。 12 ^ …解鍍敷,在露出於兩面之基底樹脂層 Ζ之表面及開口部 1ίν、、 之内壁形成鍍敷金屬層13a(圖 10(幻)。再來,將基底榭 宏 讨月曰層12上之鍍敷金屬層13a予以圖 、蝕&藉以形成内層電路217(圖10(f))。 在本實紅形恶中,透過使用層厚度小之鑛敷金屬層13a, 則變成為可形成細微的内層電路等。 又,使用所獲得之印刷佈線板 ,可依在第一實施形態中所 說明般之製造半導體裳置。 以上,雖參照圖式斜對本發明之實施形態進行說明,但該 等為本發明之例不’而亦可以採用上述以外之各種構成。 (實施例) 100129155 49 201213112 (實施例1) 依圖3所示方法製作圖1所示金屬包層積層板。 (1) 樹脂清漆(II)之調製 將作為環氧樹脂之曱氧基萘芳烷基型環氧樹脂(DIC公司 製,EPICLON HP-5000)30.0重量份、作為氰酸酯樹脂之酚 紛酿清漆型氰酸醋樹脂(LONZA公司製,Primaset PT-30)10.0重量份、作為芳香族聚醯胺樹脂之橡膠改質之含 有羥基的聚醯胺樹脂(日本化藥公司製,KAYAFLEX ΒΡΑΜ155)20.0重量份、作為硬化觸媒之味嗤(四國化成公司 製’ Curezol 1Β2ΡΖ)0.3重量份在二曱基乙醯胺與甲基乙基 酮之混合溶媒中攪拌30分鐘,使溶解。接著,添加作為偶 合劑之環氧矽烷偶合劑(日本Unicar公司製,Α187)0.2重量 份、作為無機填充材之二氧化矽奈米粒子(奈米二氧化矽, 平均粒徑56nm)39.5重量份’採用高速攪拌裝置攪拌1〇分 鐘’調製得固形分30%之樹脂清漆(π)。表!中表示出此樹 脂清漆(II)之配合。 (2) 附有基底樹脂層之金屬箔2的製作 採用點狀塗佈裝置以乾燥後(半硬化後)之基底樹脂層12 厚度為5μΠ1之方式,將上述所獲得之樹脂清漆(II)塗佈於厚 度3μΐΏ之銅箔(「MT18SD-H」,厚度3μηι(附有18μιη載體), 三井金屬礦業股份有限公司製)單面上,利用16(TC之乾燥 裝置將之乾燥10分鐘,而製作附有基底樹脂層之金屬箔2。 10012915548 S 201213112 Prepare two of the above-mentioned $日日三卜, and then attach it to the film of the edge of the resin sheet 31 (a) with the film-coated insulating resin sheet face-to-face. Both sides of the flaky fiber substrate Η (Fig., then, in the direct air w 0 1MP ^, heating more than 6 且 and 130. (:: below, pressurization «•IMPa or more and 5Μρ& knife edge & sheet 3 丨The condition, Wei has an insulating resin fiber substrate 14. Thus, the resin constituting the insulating resin layer 15 is impregnated into the prepreg 45 to which the HX member is attached (Fig. 100;); There is a film sheet; ^, the peeling sheet 16 of the pre-substrate 45 is peeled off to obtain the prepreg 11 (Fig. 1〇f into 1)). Then, the prepreg 11 is advanced by a drilling machine to form an opening portion 221 (Fig. 2). 12 ^ ...de-plating, a plating metal layer 13a is formed on the inner surface of the base resin layer exposed on both sides and the inner wall of the opening portion 1 (Fig. 10 (phantom). Further, the base layer is covered with a layer of ruthenium The plated metal layer 13a on the 12 is patterned, etched, and formed to form the inner layer circuit 217 (Fig. 10(f)). In the present red form, the use of the metallized layer 13a having a small layer thickness becomes A fine inner layer circuit or the like can be formed. Further, the obtained printed wiring board can be manufactured in accordance with the first embodiment, and the embodiment of the present invention will be described with reference to the drawings. However, these various configurations other than the above may be employed. (Examples) 100129155 49 201213112 (Example 1) A metal clad laminate shown in Fig. 1 was produced by the method shown in Fig. 3. 1) Preparation of Resin Varnish (II) 30.0 parts by weight of a decyloxynaphthalene type epoxy resin (EPICLON HP-5000, manufactured by DIC Corporation) as an epoxy resin, and a phenol varnish as a cyanate resin Type cyanate resin (Primaset PT-30, manufactured by LONZA) 20.0 parts by weight of a hydroxyl group-containing polyamine resin (KAYAFLEX® 155, manufactured by Nippon Kayaku Co., Ltd.), which is modified with a rubber of an aromatic polyamide resin, and a miscible catalyst (manufactured by Shikoku Chemicals Co., Ltd.) 0.3 parts by weight of a mixture of dimethyl hydrazine and methyl ethyl ketone was stirred for 30 minutes to dissolve. Then, an epoxy decane coupling agent as a coupling agent (manufactured by Unicar, Japan, Α187) was added. 0.2 parts by weight of cerium oxide nanoparticle as an inorganic filler (nano-cerium oxide, average particle diameter: 56 nm), 39.5 parts by weight, stirred by a high-speed stirring device for 1 minute, to obtain a resin varnish having a solid content of 30% (π). The combination of the resin varnish (II) is shown in Table! (2) The metal foil 2 with the base resin layer is formed by a dot coating device to dry (after semi-hardening) the base resin layer. 12 The resin varnish (II) obtained above was applied to a copper foil having a thickness of 3 μΐΏ ("MT18SD-H", thickness 3μηι (with 18 μιη carrier), manufactured by Mitsui Mining Co., Ltd.). On one side, the metal foil 2 with the base resin layer was produced by drying it with a drying device of 16 (TC) for 10 minutes. 100129155
S 50 201213112 (3) 樹脂清漆(I)之製作 作成表2之「核心1」的配合。具體而言,使二氧化石夕粒 子(Admatechs公司製’ S〇25R,平均粒徑〇 5师)S9 7重量 • %、環氧樹脂(日本化藥(股)製,NC3000,聯苯基芳烧基型 環氧樹脂,重量平均分子量:1300,軟化點:57〇c,環氧當 量:276g/eq)11.2重量%、氰酸酯樹脂(L〇NZA公司製, Primaset Pt-30,酚酚醛清漆型氰酸酯樹脂,重量平均分子 量:380)20.0重量%、酚樹脂(明和化成(股)製,MEH785i)8 8 重量%、環氧矽烷偶合劑(日本Uiiicar公司製,A187)〇3重 量%溶解/混合在曱基乙基酮中,採用高速攪拌裝置進行攪 拌,獲得環氧樹脂組成物以固形分基準計為7〇重量%之樹 脂清漆(I)。 (4) 絕緣樹脂層15對於附有基底層之金屬箔2的積層 採用點狀塗佈裝置並以絕緣樹脂層15之厚度為19^^之 方式,將樹脂清漆⑴塗佈在依上述所獲得之附有基底層之金 屬箔2的基底樹脂層12上,利用16〇。(:之乾燥裝置將之乾 燥10分鐘,而製作附有銅箔之絕緣樹脂薄片(半硬化)。 以絕緣樹脂層15接觸到纖維基材μ之方式,將所獲得之 附有銅箔之絕緣樹脂薄片配置於纖維基材14(厚度48/mi, 曰東紡績製E玻璃織布,WEA4280)的兩面上,以壓力 0.5MPa、溫度140 C、1分鐘之條件下,在真空壓製中進行 加熱加壓,使絕緣樹脂層15含浸於纖維基材14。此時之絕 100129155 51 201213112 緣樹脂層15與纖維基材14的合計為60μιη。接著,在壓力 IMPa、溫度220°C下進行加熱加壓成形2小時,製作出厚 度為112μιη之在兩面上具有附有載體之銅箔(金屬箔13)的 金屬包層積層板1。 (5)印刷佈線板之製作 猎由圖4、5所示方法進行製作。將載體銅予以剝離, 並進一步將極薄銅箔(金屬箔13)予以蝕刻去除。接下來,藉 由碳酸雷射形成貫通孔。再來,將孔内及基底樹脂層表面浸 /貝於80 C的膨潤液(Admatechs公司製,swelling DIP SecuriganthP)中1〇分鐘,並進一步在8〇°c的過錳酸鉀水溶 液(Admatechs 公司製,Concentrate Compact CP)中浸潰 5 分 鐘後,予以中和並進行粗化處理。 在將之經過脫脂、觸媒賦予、活性化之步驟之後,對無電 解鍍銅皮膜形成約1μιη之鍍敷阻抗,將無電解鍍銅皮膜當 作給電層,使形成圖案電鍍銅,施以ι/ρυ/υμηι之 細微電路加工。接著,於熱風乾燥裝置中、2〇〇它下進行退 火處理60分鐘後,利用快閃蝕刻去除給電層。 其次’印刷焊錫阻抗劑(太陽油墨製造(股)製,psR_4〇〇〇 AUS703) ’以半導體元件搭載墊片等露出之方式,並以既定 遮罩進行曝光、顯影、硬化,形成電路上之焊錫阻抗劑層厚 度為12μπι。 最後’對由焊錫阻抗劑層所露出之電路層上,形成包含無 100129155S 50 201213112 (3) Production of resin varnish (I) The cooperation of "core 1" of Table 2 is made. Specifically, the cerium dioxide particles ("S〇25R, average particle size 〇5 division" manufactured by Admatech Co., Ltd.) S9 7 wt•%, epoxy resin (Nippon Chemical Co., Ltd., NC3000, biphenyl group) Acryl-based epoxy resin, weight average molecular weight: 1300, softening point: 57 〇 c, epoxy equivalent: 276 g/eq) 11.2% by weight, cyanate resin (manufactured by L〇NZA, Primaset Pt-30, phenol phenolic) Varnish type cyanate resin, weight average molecular weight: 380) 20.0% by weight, phenol resin (manufactured by Megumi Chemical Co., Ltd., MEH785i) 88% by weight, epoxy decane coupling agent (A187 manufactured by Uiiicar Co., Ltd.) 〇 3 weight % was dissolved/mixed in mercaptoethyl ketone, and stirred with a high-speed stirring device to obtain a resin varnish (I) having an epoxy resin composition of 7 Å by weight based on the solid content. (4) The insulating resin layer 15 is applied to the laminate of the metal foil 2 with the base layer by a dot coating apparatus and the resin varnish (1) is applied in the manner of the thickness of the insulating resin layer 15 as described above. On the base resin layer 12 of the metal foil 2 to which the base layer is attached, 16 turns are used. (: The drying device dries it for 10 minutes to prepare an insulating resin sheet with copper foil (semi-hardening). The insulating resin layer 15 is in contact with the fiber substrate μ, and the obtained copper foil is insulated. The resin sheet was placed on both sides of the fiber base material 14 (thickness 48/mi, E-glass woven fabric, WEA4280), and heated under vacuum at a pressure of 0.5 MPa and a temperature of 140 C for 1 minute. Pressurization, the insulating resin layer 15 is impregnated into the fibrous base material 14. At this time, the total thickness of the edge resin layer 15 and the fibrous base material 14 is 60 μm. Then, heating is performed at a pressure of 110 MPa and a temperature of 220 ° C. After press molding for 2 hours, a metal clad laminate 1 having a thickness of 112 μm and having a carrier-attached copper foil (metal foil 13) on both sides was produced. (5) Production of a printed wiring board is shown in Figs. The method is carried out. The carrier copper is peeled off, and the ultra-thin copper foil (metal foil 13) is further removed by etching. Next, a through hole is formed by a carbonic acid laser. Then, the inside of the hole and the surface of the base resin layer are immersed. /Bei 80 C swelling fluid It was immersed for 5 minutes in an aqueous solution of potassium permanganate (Concentrate Compact CP, manufactured by Admatechs Co., Ltd., manufactured by Admatechs Co., Ltd., manufactured by Admatech Co., Ltd.), neutralized and coarsened. After the step of degreasing, catalyst addition, and activation, a plating resistance of about 1 μm is formed on the electroless copper plating film, and an electroless copper plating film is used as an electric layer to form a pattern electroplated copper. The micro-circuit is processed by ι/ρυ/υμηι. Then, after annealing for 60 minutes in a hot air drying device, the electrode layer is removed by flash etching. Next, 'printing solder resist (solar ink manufacturing ( )R), psR_4〇〇〇AUS703) 'The semiconductor device is mounted with a spacer or the like, and exposed, developed, and cured with a predetermined mask to form a solder resist layer thickness of 12 μm on the circuit. The solder resist layer is exposed on the circuit layer and is formed to contain no 100129155
S 52 201213112 電解鍍鎳層3μηι,且於其上為無電解鍍金層〇.1μηι的鍍敷 層,獲得半導體裝置用之多層印刷佈線板。 (6)半導體裝置之製作 製作圖6所示半導體裝置。具體而言,半導體裝置係藉由 倒裝晶片打線機裝置以加壓壓黏將具有焊錫凸塊之半導體 元件(TEG晶片’尺寸8mmx8mm,厚度0.1mm)搭載於上述 半導體裝置用之多層印刷佈線板上,其次,利用IR回流爐 將焊錫凸塊予以熔融接合之後,填充液狀密封樹脂(住友電 木公司製,CRP-4152S),並透過使液狀密封樹脂硬化而可 獲得。另外,液狀密封樹脂係在溫度15(rc、12〇分鐘之條 件下使進行硬化。此外,上述半導體元件之焊用 以Sn/Pb組成之共晶所形成者 ’、 ,取便稭由刻模器(router) 切月化為14mmxl4mm的尺寸,獲得半導體裝置 (實施例2) 除了將樹脂清漆(II)依表1之配合進行之外 礅—忐™ 4卜,同實施例1 進订處理。具體而言,除了將樹脂清漆(„)之配合量變更為 作為氰酸酯樹脂之酚酚醛清漆型氰酸酯樹脂 、 」· u重置^ 4分、 作為芳香知聚醯胺樹月曰之輕基含有聚醯胺樹腊300重旦 份、作為無機填充材之二氧化矽奈米粒子24 5 . m n ^ , 里:!:份之外, 同貝施例1進行處理。 (實施例3) 同實施例 除了將樹脂清漆(II)依表1之配合進行之外, 100129155 53 201213112 具體μ,除了將樹脂清漆m)之配合量變更為 作為環氧樹脂之甲氧基萘技基型環氧樹脂则重量份、 作為=酸§旨樹脂之祕料漆型氣酸_脂2㈣重量份、 作為芳香族聚醯胺樹脂之㈣含有聚_樹脂遍里重量 份、作為無機填充材之二氧切奈米粒子9 5重量份之外, 同實施例1進行處理。 (實施例4) 除了將樹脂清漆⑴依表2之「如2」之配合進行,並採 用玻璃織布(厚度卿m,日東紡績製τ,織布,wm_ 之外’㈣施例3進行處理。具體而言,除了將樹脂清漆⑴ 之配合1定為二氧化石夕粒子69.7重量%、環氧樹脂8 4重量 %、氰酸自旨樹脂15.0重量%、_脂6.6重量%、環氧石夕院 偶合劑〇·4重量%,並採用上述玻璃織布之外,同實施例3 進行處理。 (實施例5) 除了將樹脂清漆⑴依表2之「核心3」之配合進行之外, 同實施例3進行處理。具體而言,除了針對樹脂清漆⑴而定 為二氧化矽粒子69.7重量%、環氧樹脂(DIC公司製, EXA7320,甲氧基萘二亞曱基型環氧樹月旨,軟化點:π。。, 環氧當量:255g/eq)14.9重量%、硬化觸媒(住友電木公司 製,C05-MB,磷系觸媒)〇.3重量%、環氧矽烷偶合劑〇.4 重量%,且未使用酚樹脂之外,同實施例3進行處理。 54 100129155S 52 201213112 Electrolytic nickel plating layer 3μηι, and a plating layer of electroless gold plating layer 〇.1μηι thereon, to obtain a multilayer printed wiring board for a semiconductor device. (6) Production of semiconductor device A semiconductor device shown in Fig. 6 was produced. Specifically, in the semiconductor device, a semiconductor device having a solder bump (a TEG wafer size of 8 mm x 8 mm and a thickness of 0.1 mm) is mounted on the multilayer printed wiring board for the semiconductor device by press-bonding by a flip chip bonding machine. Then, the solder bumps were melt-bonded by an IR reflow furnace, and then filled with a liquid sealing resin (CRP-4152S, manufactured by Sumitomo Bakelite Co., Ltd.) and cured by curing the liquid sealing resin. In addition, the liquid sealing resin is cured at a temperature of 15 (rc, 12 minutes, and the like, and the welding of the above-mentioned semiconductor element is formed by a eutectic composition composed of Sn/Pb'). The router was cut into a size of 14 mm x 14 mm to obtain a semiconductor device (Example 2). Except that the resin varnish (II) was subjected to the cooperation of Table 1, the same procedure as in Example 1 was carried out. Specifically, in addition to changing the blending amount of the resin varnish („) to a phenol novolac type cyanate resin as a cyanate resin, “·· u reset ^ 4 points, as a fragrant polyamidamine tree The light base contains 300 parts of polyammonium wax, and the cerium oxide nanoparticle 24 5 . mn ^ , which is an inorganic filler, is treated in the same manner as in Example 1. 3) In the same example, except that the resin varnish (II) was blended according to Table 1, 100129155 53 201213112 specific μ, except that the amount of the resin varnish m) was changed to a methoxy naphthene type as an epoxy resin. The epoxy resin is in parts by weight, as the secret of the acid § resin, the lacquer type qi acid _lipid 2 Parts by weight, (iv) the aromatic polyamide resin as the resin containing polylactic times _ in parts by weight, as the addition of the inorganic filler-dioxo Qienai Mi particles 95 parts by weight, the process described in Example 1. (Example 4) Except that the resin varnish (1) was blended in accordance with "2" of Table 2, and treated with a glass woven fabric (thickness m, Nitto Kokubun, woven fabric, wm_ other than (4) Example 3) Specifically, in addition to the blending of the resin varnish (1), it is defined as 69.7 wt% of the silica dioxide particles, 84 wt% of the epoxy resin, 15.0 wt% of the cyanide resin, and 6.6% by weight of the epoxy resin. In the same manner as in Example 3, the above-mentioned glass woven fabric was treated with the above-mentioned glass woven fabric. (Example 5) Except that the resin varnish (1) was subjected to the "core 3" of Table 2, The treatment was carried out in the same manner as in Example 3. Specifically, in addition to the resin varnish (1), the cerium oxide particles were 69.7 wt%, and the epoxy resin (manufactured by DIC Corporation, EXA7320, methoxynaphthalene diterpene type epoxy tree) The softening point: π., epoxy equivalent: 255 g/eq) 14.9 wt%, hardening catalyst (manufactured by Sumitomo Bakelite Co., Ltd., C05-MB, phosphorus-based catalyst) 3.3% by weight, epoxy decane The mixture was treated with 〇.4% by weight and was not treated with phenol resin. The treatment was carried out in the same manner as in Example 3. 54 100129155
S 201213112 (合成例1)氰酸酯樹脂(萘醇芳烷基型氰酸酯樹脂) 添加萘醇芳烧基型齡樹脂(新日鐵化學製,SN485N,經基 當量215g/eq)101g(0.47莫耳的經基)與曱基異丁基酮(以下 簡稱為MIBK)400g,於室溫下進行攪拌溶解。在溶解後, 進行冷卻直至-1 o°C。在-1 〇°C下加入溴化氰(以下簡稱為 BrCN)110g(純度95% ’ 0.987莫耳)’當内溫變成,則 花費1小時滴下三乙基胺(以下簡稱為TEA)100g(0.99莫耳) 與MIBK 600g之混合液。滴下後,進一步進行熟化30分鐘, 並再使熟化約略2小時,結束反應。對所獲得之溶液添加純 水400毫升而進行分液,再添加5%鹽酸水溶液(HC1)1000 毫升而進行分液。此外,以10%食鹽水500g進行洗淨分液 兩次,再單純以500毫升進行洗淨兩次。 有機層在以無水硫酸鈉進行脫水後,將溶劑予以減壓去 除’獲得固形樹脂。將所獲得之固形物以環己烷洗淨後,藉 由減壓乾燥則可得到萘醇芳烷基型氰酸酯樹脂。如此處理而 獲得之萘醇芳烷基型氰酸酯樹脂係藉由紅外線光譜測量(島 津製作所製IR prestige-21,KBr穿透法)而分析,酚性羥基 ί· 之吸收帶為3200〜3600cm_1者消失,確認到氰酸酯樹脂之腈 的吸收帶為2264cm·1附近。 (實施例6) 除了將樹脂清漆(I)依表2之「核心4」之配合進行之外’ 同實施例3進行處理。 100129155 55 201213112 具體而&,除了針對樹脂清漆⑴而使用二氧化矽粒子 (Admatechs公司製,S025R,平均粒徑〇 5/m〇51 7重量%、 二氧化矽粒子(信越化學公司製,KMp6〇〇,平均粒徑: 5/Xm)9.〇重量°/〇、環氧樹脂(日本化藥(股)製,NC3000,聯笨 基芳烷基型%氧樹脂,重量平均分子量:13〇〇,軟化點: 57C,環氧當量:276g/eq)15.4重量%、環氧樹脂(DIC公司 製,HP4032D,萘型環氧樹脂(常溫下為半固態),環氧當量: 152g/eq)1.9重量%、於合成例i所合成之氰酸酯(SN485衍 生物)12.7重量%、順丁烯二醯亞胺樹脂(KI化成(股)製, BMI70)8.5重量%、硬化觸媒(大崎工業公司製,辛酸鋅)〇4 重量%、環氧石夕烧偶合劑0.3重量%,且未配合紛樹脂之外, 同實施例3進行處理。 (實施例7) 進行如表2之「核心5」之配合。具體而言,除了針對樹 脂清漆(I)而使用二氧化石夕粒子(Admatechs公司製,S025R, 平均粒徑0·5μηι)39.8重量%、氫氧化鋁(曰本輕金屬公司 製,ΒΕ033,平均粒徑:2/xm)19.9重量%、滑石(富士滑石工 業公司製,LMS200 ’平均粒徑:5/mi)10.0重量%、環氧樹 脂(DIC公司製,N665EXPS,甲酚酚醛清漆型環氧樹脂,軟 化點:70°C,環氧當量:209g/eq)17.8重量%、酚樹脂(住友 Durez(股)製,PR51470,酚醛清漆型酚樹脂,OH當量 105)11.9重量%、硬化觸媒(Degussa公司製,二氰二胺)〇 3 100129155 56 201213112 重量%、環氧石夕烧偶合劑0.4重量%,且未配合氰酸S旨樹脂 之外,同實施例3進行處理。 (實施例8) 除了將樹脂清漆(II)依表1之配合進行之外,同實施例1 進行處理。具體而言,除了將樹脂清漆(II)之配合變更為作 為環氧樹脂之雙酚A型環氧樹脂(日本環氧樹脂公司製, EPICODE828EL)40.0重量份、作為氰酸酯樹脂之酚酚醛清 漆型氰酸酯樹脂20.0重量份、作為芳香族聚醯胺樹脂之羥 基含有聚醯胺樹脂30.0重量份、作為偶合劑之環氧矽烷偶 合劑0.1重量份與作為無機填充材之二氧化矽奈米粒子9.6 重量份之外,同實施例1進行處理。 (實施例9) 除了將樹脂清漆(II)依表1之配合進行之外,同實施例1 進行處理。具體而言,除了將樹脂清漆(II)之配合變更為作 為環氧樹脂之酚芳烷基型環氧樹脂(日本化藥(股)製, NC-3000H)40.0重量份、作為氰酸酯樹脂之酚酚醛清漆型氰 酸酯樹脂20.0重量份、作為芳香族聚醯胺樹脂之羥基含有 聚醯胺樹脂30.0重量份、作為無機填充材之二氧化矽奈米 粒子9.5重量份之外,同實施例1進行處理。 (實施例10) 除了將樹脂清漆(II)依表1之配合進行之外,同實施例1 進行處理。具體而言,除了將樹脂清漆(II)之配合變更為作 100129155 57 201213112 為環氧樹脂之具有二環戊二烯骨架之環氧樹脂(DIC公司 製,HP-7200)40.0重量份、作為氰酸酯樹脂之酚酚醛清漆型 氰酸酯樹脂20.0重量份、作為芳香族聚醯胺樹脂之羥基含 有聚醯胺樹脂30.0重量份、作為偶合劑之環氧矽烷偶合劑 0.1重量份與作為無機填充材之二氧化矽奈米粒子9.6重量 份之外,同實施例1進行處理。 (實施例11) 除了將乾燥後(半硬化後)之基底樹脂層12的厚度設為 10/mi、將貼銅積層板之厚度設為122/xm之外,同實施例1 進行處理。 (比較例1) 除了去除基底樹脂層之外,同實施例1進行處理。 (比較例2) 除了將樹脂清漆(II)依表1之配合進行之外,同實施例1 進行處理。具體而言,除了將樹脂清漆(II)之配合變更為作 為無機填充材之二氧化石夕粒子(Admatechs公司製,S025R, 平均粒徑0.5μηι)39.5重量份之外,同實施例1進行處理。 (比較例3) 除了將樹脂清漆(II)依表1之配合進行之外,同實施例1 進行處理。具體而言,除了將樹脂清漆(II)之配合變更為作 為環氧樹脂之曱氧基萘芳烷基型環氧樹脂39.5重量份、作 為氰酸酯樹脂之酚酚醛清漆型氰酸酯樹脂30.0重量份、作 100129155 58 201213112 、*香麵聚醯胺樹脂之羥基含有聚醯胺樹脂30.0重量份、 為硬化觸媒之咪唑〇 5重量份,且未使用偶合劑及鉦機填 充材之外,n ^ . . 同貫施例1進行處理。 (比較例4) 、、將柄^旨清漆(H)依表1之配合進行之外,同實施例1 進行處理。θ _ , 具體而言’除了將樹脂清漆(π)之配合變更為作 為衣氧锊脂之甲氧基萘芳烷基型環氧樹脂35.0重量份、作 為氰馱酯樹脂之酚酚醛清漆型氰酸酯樹脂25.0重量份、作 為偶合劑之環氧魏偶合劑。」重量份、作為無機填充材之 氧化矽奈米粒子39.4重量份,且未使用芳香族聚醯胺樹 脂之外,同實施例1進行處理。 (比較例5) 除了將樹脂清漆(II)依表i之配合進行、將乾燥後(半硬化 後)之基底樹脂層的厚度設為3j[mi、將貼銅積層板之厚度設 為1〇8μιη之外’同實施例1進行處理。具體而言,除了變 更作為芳香族聚醯胺樹脂之羥基含有聚醯胺樹脂60 0重量 份、作為偶合劑之環氧矽烷偶合劑0.3重量份、作為無機填 充材之二氧化矽奈米粒子39.7重量份,且未使用環氧樹脂、 氰酸醋樹脂及硬化觸媒而調製樹脂清漆(11)之外’同實施例 1進行處理。 表1中’樹脂材料之數值單位係「重量份」。 100129155 59 2 1X 1X 3 1X2 1Xo2 【Id I-1 1 s 議 *—< 邀 1 UJ 1寸 § Q m 3 3 1 您 ω Q 1 8 1 邀 1 ω 響⑺ 1 o _ ΓΠ 3 S 議 ό ω 蜜- 牮 % ω 1ST 1 o § S S 議 ο «F 1 υα Ιο 蘇— s 苕 S ·—· 1 κη W 場 ω 盏OS IS 1 1 1 3 s § w-> 途 祿 ω 念00 IS 1 1 § § 3 S 1 ν-> Tj 邀 1 to I- 1 1 1 S s 謹 »Τ) 蓄 ω fvo 1 1 1 3 s 1 寸 楚 I ω 1 S s 3 s 1 ^Τ) .·) «f f UQ 累寸 1 1 案 3 s 1 (N I3f Η 意m 蘇 1 1 s S3 S s 議 f ω I- 柄 1 1 1 S s 謹 ω 1 | _ 3 s _ f ω ♦l 4〇b g § e i 翁 it 1 i 蜃1 I ild I^I 酴還S |l§ 象56] i I fi ? a)qi 1 f 1| ilnr S I! iim 珥 蒜! *=m CQ <1 M 4 li % 〇L 1 I 1 香 I I ϊν〇" <0 § Igp Ιϊδ i II® i)D 1)01 @11 4isS ilm !i I g 1 _ i -V i φ m mm tin 韜 09 ¢-6-001 s 201213112 1:¾。「%¥_」,#与蚌 mfw^tog r-&-(N^ 核心5 WEA1280 60μτη 17.8 11.9 39.8 19.9 10.0 ro 〇 寸 核心4 WEA1280 60jUin 15.4 Ο) 12.7 IT) OO 51.7 rn 核心3 WEA1280 60/rni 14.9 14.9 69.7 cn 寸 〇 核心2 WTX1280 1 βΟμεη , 3 15.0 v〇 Vd 69.7 寸· 核心1 WEA1280 60/m 11.2 20.0 oo od 59.7 NC3000 HP4032D N665EXPS EXA7320 PT30 SN485衍生物 MEH7851 1_ PR51470 BMI70 S025R KMP600 BE033 LMS200 BMT-3L 磷系觸媒 辛酸鋅 Ί 喊 Ί 環氧>5夕烷 t W9- 配方 環氧樹脂 氰酸醋樹脂 紛樹脂 順丁烯二醯亞胺接f脂 無機填充材 硬化觸媒 偶合劑 19-163102 201213112 測量方法係如下所述。 1. 二氧化矽奈米粒子之粒徑 在欠中藉由超音波使二氧化石夕奈米粒子(二氧化石夕粒子) 刀政透過動恶光散亂式粒度分佈測量裝置脚^脱公司 製’ LB-550)以體積基準計來測量二氧化料米粒子(二氧化 夕粒子)之粒度分佈’將其巾間餘設為平均純。具體來 «兄’ -氧切奈米粒子及二氧切粒子等無機填充材之平均 粒徑矽以體積累積粒徑Dm而規定。 2. 線膨脹率(〇〇 藉由银刻將在貫施例及比較例所獲得之貼銅積層板之銅 治予以去除,由已去除銅箔之基底樹脂層、核心層(預浸 體)、附有基底樹脂層之核心層製作4mmx2〇mm之試驗片, 採用TMA(熱機械性分析)裝置(TA設備公司製,q4〇〇),在 溫度fe圍3G〜3GG°C、10°C/分鐘、負重5g的條件下測量第 二次循環時在50〜150°C時之平面方向(χγ方向)之線膨脹係 數(CTE)。將基底樹脂層之CTE設為叫、核心層(預浸體)之 CTE設為%、附有基底樹脂層之核心層之cTE設為%,結 果示於表3。 3. 彈性模數(E) 藉由蝕刻將在實施例及比較例所獲得之貼銅積層板之銅 箔予以去除,由基底樹脂層、核心層、附有基底樹脂層之核 心層製作8mmx30mm之試驗片,採用DMA(動態黏彈性測 100129155 62S 201213112 (Synthesis Example 1) Cyanate resin (naphthyl aralkyl type cyanate resin) Addition of naphthol aryl-based resin (manufactured by Nippon Steel Chemical Co., Ltd., SN485N, base equivalent: 215 g/eq) 101 g ( 0.47 mole of mercapto) and 400 g of decyl isobutyl ketone (hereinafter abbreviated as MIBK) were stirred and dissolved at room temperature. After dissolution, it was cooled to -1 o ° C. When cyanogen bromide (hereinafter referred to as BrCN) 110 g (purity: 95% '0.987 mol) was added at -1 ° C, when the internal temperature became, it took 1 hour to drip triethylamine (hereinafter abbreviated as TEA) 100 g (hereinafter referred to as TEA). Mixture of 0.99 moles with MIBK 600g. After the dropping, the aging was further carried out for 30 minutes, and the ripening was further carried out for about 2 hours to complete the reaction. To the obtained solution, 400 ml of pure water was added to carry out liquid separation, and then 1000 ml of a 5% hydrochloric acid aqueous solution (HC1) was added thereto to carry out liquid separation. Further, the mixture was washed twice with 500 g of 10% saline, and washed twice with 500 ml. After the organic layer was dehydrated with anhydrous sodium sulfate, the solvent was removed under reduced pressure to obtain a solid resin. After the obtained solid matter is washed with cyclohexane, the naphthyl aralkyl type cyanate resin can be obtained by drying under reduced pressure. The naphthyl aralkyl type cyanate resin obtained by the treatment was analyzed by infrared spectroscopy (IR prestige-21 manufactured by Shimadzu Corporation, KBr penetration method), and the absorption band of the phenolic hydroxy ίί was 3200 to 3600 cm _1 . When it disappeared, it was confirmed that the absorption band of the nitrile of the cyanate resin was around 2264 cm·1. (Example 6) The same procedure as in Example 3 was carried out except that the resin varnish (I) was carried out in accordance with the "core 4" of Table 2. 100129155 55 201213112 Specifically, in addition to the resin varnish (1), cerium oxide particles (S025R, manufactured by Admatech Co., Ltd., average particle size 〇5/m〇517% by weight, cerium oxide particles (manufactured by Shin-Etsu Chemical Co., Ltd., KMp6) were used. 〇〇, average particle size: 5/Xm) 9. 〇 weight ° / 〇, epoxy resin (Nippon Chemical Co., Ltd., NC3000, phenyl aryl alkyl type oxygen resin, weight average molecular weight: 13 〇 〇, softening point: 57C, epoxy equivalent: 276g/eq) 15.4% by weight, epoxy resin (made by DIC Corporation, HP4032D, naphthalene type epoxy resin (semi-solid at normal temperature), epoxy equivalent: 152g/eq) 1.9% by weight, cyanate ester (SN485 derivative) synthesized in Synthesis Example i, 12.7% by weight, maleic acid imide resin (manufactured by KI Chemical Co., Ltd., BMI70), 8.5% by weight, hardening catalyst (Osaki Industrial Co., Ltd., zinc octoate) 〇 4% by weight, 0.3% by weight of an epoxy resin coupling agent, and treated in the same manner as in Example 3 (Example 7) 5". Specifically, in addition to the resin varnish (I), the use of dioxide (manufactured by Admatech Co., Ltd., S025R, average particle diameter: 0. 5 μηι), 39.8 wt%, aluminum hydroxide (manufactured by Sakamoto Light Metal Co., Ltd., ΒΕ033, average particle diameter: 2/xm), 19.9% by weight, talc (manufactured by Fuji Talc Co., Ltd., LMS200 'Average particle diameter: 5/mi) 10.0% by weight, epoxy resin (manufactured by DIC Corporation, N665EXPS, cresol novolak type epoxy resin, softening point: 70 ° C, epoxy equivalent: 209 g / eq) 17.8 weight %, phenol resin (manufactured by Sumitomo Durez Co., Ltd., PR51470, novolac type phenol resin, OH equivalent: 105), 11.9% by weight, hardening catalyst (manufactured by Degussa, dicyandiamide) 〇3 100129155 56 201213112% by weight, ring The oxygen oxysulfide coupling agent was 0.4% by weight, and was treated in the same manner as in Example 3 except that the cyanic acid S resin was not added. (Example 8) Except that the resin varnish (II) was blended in accordance with Table 1, Example 1 The treatment was carried out, except that the blending of the resin varnish (II) was changed to 40.0 parts by weight of bisphenol A type epoxy resin (EPICODE 828EL, manufactured by Nippon Epoxy Co., Ltd.) as an epoxy resin, and it was used as cyanic acid. Ester resin phenol novolak type cyanate resin 2 0.0 parts by weight, the hydroxyl group of the aromatic polyamide resin contains 30.0 parts by weight of a polyamide resin, 0.1 parts by weight of an epoxy decane coupling agent as a coupling agent, and 9.6 parts by weight of cerium oxide nanoparticles as an inorganic filler. The treatment was carried out in the same manner as in Example 1. (Example 9) The same procedure as in Example 1 was carried out except that the resin varnish (II) was blended in accordance with Table 1. Specifically, the blending of the resin varnish (II) was changed to 40.0 parts by weight of a phenol aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000H) as an epoxy resin, and it was used as a cyanate resin. 20.0 parts by weight of the phenol novolac type cyanate resin, 30.0 parts by weight of the hydroxyl group of the aromatic polyamide resin, and 9.5 parts by weight of the cerium oxide nanoparticles as the inorganic filler. Example 1 was processed. (Example 10) The same procedure as in Example 1 was carried out except that the resin varnish (II) was blended in accordance with Table 1. Specifically, in addition to the resin varnish (II), 40.0 parts by weight of an epoxy resin (HP-7200, manufactured by DIC Corporation) having an epoxy resin and having a dicyclopentadiene skeleton as an epoxy resin was used as a cyanide. 20.0 parts by weight of the phenol novolac type cyanate resin of the acid ester resin, 30.0 parts by weight of the hydroxyl group of the aromatic polyamide resin, 0.1 part by weight of the epoxy decane coupling agent as a coupling agent, and inorganic filler The same procedure as in Example 1 was carried out except that 9.6 parts by weight of the cerium oxide nanoparticles were used. (Example 11) The same procedure as in Example 1 was carried out except that the thickness of the base resin layer 12 after drying (after semi-hardening) was 10/mi and the thickness of the copper-clad laminate was 122/xm. (Comparative Example 1) The treatment was carried out in the same manner as in Example 1 except that the base resin layer was removed. (Comparative Example 2) The same procedure as in Example 1 was carried out except that the resin varnish (II) was blended in accordance with Table 1. Specifically, the treatment was carried out in the same manner as in Example 1 except that the blending of the resin varnish (II) was changed to 39.5 parts by weight of the cerium dioxide particles (S025R, average particle diameter 0.5 μηι) manufactured by Admatech Co., Ltd. as an inorganic filler. . (Comparative Example 3) The same procedure as in Example 1 was carried out except that the resin varnish (II) was blended in accordance with Table 1. Specifically, the resin varnish (II) was changed to 39.5 parts by weight of a nonoxynaphthalene aralkyl type epoxy resin as an epoxy resin, and a phenol novolac type cyanate resin 30.0 as a cyanate resin.重量份为为100129155 58 201213112 , * The hydroxyl group of the fragrant surface polyamide resin contains 30.0 parts by weight of polyamidamide resin, 5 parts by weight of imidazole oxime which is a curing catalyst, and no coupling agent and kiln filler are used. n ^ . . Coherent Example 1 for processing. (Comparative Example 4) The same procedure as in Example 1 was carried out except that the varnish (H) was carried out in accordance with Table 1. θ _ , specifically, 'in addition to changing the resin varnish (π), 35.0 parts by weight of a methoxynaphthalene-based epoxy resin as a oxyn epoxide, and a phenol novolak-type cyanide as a cyanoester resin 25.0 parts by weight of an acid ester resin, an epoxy Wei coupling agent as a coupling agent. The treatment was carried out in the same manner as in Example 1 except that the weight fraction was 39.4 parts by weight of the cerium oxide nanoparticles as the inorganic filler, and the aromatic polyamine resin was not used. (Comparative Example 5) The thickness of the base resin layer after drying (after semi-hardening) was set to 3j [mi], and the thickness of the copper-clad laminate was set to 1 除了, except that the resin varnish (II) was blended according to Table i. Processing was carried out in the same manner as in Example 1 except for 8 μm. Specifically, in addition to changing the hydroxyl group of the aromatic polyamide resin, 60 parts by weight of the polyamide resin, 0.3 parts by weight of the epoxy decane coupling agent as a coupling agent, and the cerium oxide nanoparticle 39.7 as an inorganic filler. The same as in Example 1 except that the resin varnish (11) was prepared without using an epoxy resin, a cyanate resin, and a curing catalyst. The numerical unit of the resin material in Table 1 is "parts by weight". 100129155 59 2 1X 1X 3 1X2 1Xo2 [Id I-1 1 s Discussion*—< Invite 1 UJ 1 inch § Q m 3 3 1 You ω Q 1 8 1 Invite 1 ω Ring (7) 1 o _ ΓΠ 3 S ω honey - 牮% ω 1ST 1 o § SS ο «F 1 υα Ιο 苏— s 苕S ·—· 1 κη W Field ω 盏OS IS 1 1 1 3 s § w-> Tulu ω 念 00 IS 1 1 § § 3 S 1 ν-> Tj invites 1 to I- 1 1 1 S s Τ »Τ) ωω fvo 1 1 1 3 s 1 inch Chu I ω 1 S s 3 s 1 ^Τ) . «ff UQ Accumulated 1 1 Case 3 s 1 (N I3f Η Italian m Su 1 1 s S3 S s Discussion f ω I- Handle 1 1 1 S s ω 1 | _ 3 s _ f ω ♦ l 4〇 Bg § ei 翁 翁 1 i 蜃1 I ild I^I 酴 also S | l§ like 56] i I fi ? a)qi 1 f 1| ilnr SI! iim 珥 garlic! *=m CQ <1 M 4 li % 〇L 1 I 1 Fragrance II ϊν〇"<0 § Igp Ιϊδ i II® i)D 1)01 @11 4isS ilm !i I g 1 _ i -V i φ m mm tin 韬09 ¢-6-001 s 201213112 1:3⁄4. "%¥_", #和蚌mfw^tog r-&-(N^ Core 5 WEA1280 60μτη 17.8 11.9 39.8 19.9 10.0 ro 〇 Core 4 WEA1280 60jUin 15.4 Ο) 12.7 IT) OO 51.7 rn Core 3 WEA1280 60/ Rni 14.9 14.9 69.7 cn inch 〇 core 2 WTX1280 1 βΟμεη , 3 15.0 v〇Vd 69.7 inch · core 1 WEA1280 60/m 11.2 20.0 oo od 59.7 NC3000 HP4032D N665EXPS EXA7320 PT30 SN485 derivative MEH7851 1_ PR51470 BMI70 S025R KMP600 BE033 LMS200 BMT- 3L Phosphorus Catalyst Zinc Oxide Ί Ί 环氧 Epoxy > 5 夕 t t W9- Formulation Epoxy Cyanate Vinegar Resin Resin Butanimide Resin F Filler Inorganic Filler Hardening Catalyst Coupler 19- 163102 201213112 The measurement method is as follows. 1. The particle size of the cerium oxide nanoparticle is in the middle of the osmosis by using the ultrasonic wave to make the cerium cerium particle (the cerium dioxide particle). The 'LB-550' was measured on a volume basis to measure the particle size distribution of the rice dioxide particles (earth dioxide particles). Specifically, the average particle diameter 矽 of the inorganic filler such as oxygen brother particles and dioxo particles is defined by the volume cumulative particle diameter Dm. 2. Linear expansion ratio (the copper layer of the copper-clad laminate obtained in the respective examples and comparative examples is removed by silver engraving, and the base resin layer and core layer (prepreg) from which the copper foil has been removed are removed. A test piece of 4 mm x 2 mm was prepared with a core layer of a base resin layer, and a TMA (thermo-mechanical analysis) device (manufactured by TA Equipment Co., Ltd., q4 〇〇) was used, and the temperature was around 3 G to 3 GG ° C, 10 ° C. The linear expansion coefficient (CTE) in the plane direction (χγ direction) at 50 to 150 ° C in the second cycle was measured under a condition of a load of 5 g/min. The CTE of the base resin layer was set to the core layer. The CTE of the dip) was set to %, and the cTE of the core layer with the base resin layer was set to %. The results are shown in Table 3. 3. The modulus of elasticity (E) was obtained by etching in the examples and comparative examples. The copper foil of the copper-clad laminate was removed, and a test piece of 8 mm x 30 mm was prepared from the base resin layer, the core layer, and the core layer with the base resin layer, and DMA (dynamic viscoelasticity measurement 100129155 62) was used.
201213112 量)裝置(ΤΑ設備公司製,q8〇〇),在溫度範圍3 〇〜3 5叱、5 ^ / 分鐘、頻率1HZ、洗的條件下測量拉伸彈性紐。將基底 樹脂層之彈賴數設為ErH (預浸體)之賴模數設為 E2、附有基底樹脂層之核心層之彈性模數設為&,結果示 於表3。 4. 剝離強度(N) 藉由蚀刻將銅由在實施例及比較例所獲得之貼銅積層 板予以去除,浸潰於60°C的膨潤液(Admatechs公司製, swelling DIP Secudganth 卩)中 10 分鐘,並進一步在 8〇<t 的 過猛酸鉀水溶液(Admatechs公司製’ c〇ncentrate compact CP)中浸潰5分鐘後’予以中和並進行粗化處理。在將之經 過脫脂、觸媒賦予、活性化之步驟之後,使形成無電解鍍銅 皮膜約Ιμηι、電鍍銅30μιη,於熱風乾燥裝置中、2〇〇。(:下 進4亍退火處理60分鐘。根據JIS-C-6481製作l〇〇mmx20nini 之試驗片,並測量23°C下之剝離強度。結果示於表3。 5. 吸濕剝離(Ν’) 將依上述所獲得之l〇〇nim><20mm之試驗片予以單面蝕 刻,利用壓力鍋於121°C、溼度1〇〇%之條件下進行處理72 小時。剝離強度測量係根據JIS-C-6481進行。結果示於表3。 6. 細線加工性評估 藉由利用雷射顯微鏡對在實施例及比較例所獲得之 L/S=12/12之圖案進行細線之外觀檢查及導通檢測而予以評 100129155 63 201213112 估。結果示於表3。符號係如下述。 ◎:形狀、導通均沒有問題 〇.沒有知路、佈線切斷情形,實質上沒有問題 X :有短路、佈線切斷情形 7.絕緣可靠性評估 採用在貫施例及比較例所獲得之L / s =丨2 /12之圖案上取代 焊錫阻抗_層/硬化有4層材(住友電木製,獻通gs) 樣本,於溫度not、溼度85%、施加μ 3·3ν之條件下 評估連續財絕緣阻抗。另外,㈣抗值咖以下視為故 障。結果示於表3。符號係如下述。 ◎ : 300小時以上沒有問題 〇:150〜未滿300小時 X :未滿150小時 8.半導體裝置之翹曲評估 關於在實施例及比較例中所獲得之主 于導體裝置之尺寸201213112 (available from ΤΑ Equipment Co., Ltd., q8〇〇), the tensile elastic bond was measured under the conditions of a temperature range of 3 〇 to 3 5 叱, 5 ^ / min, a frequency of 1 Hz, and washing. The number of elastic layers of the base resin layer was set to ErH (prepreg), and the modulus of elasticity of the core layer with the base resin layer was set to & and the results are shown in Table 3. 4. Peel strength (N) Copper was removed by etching from the copper-clad laminate obtained in the examples and the comparative examples, and immersed in a swelling liquid at 60 ° C (manufactured by Admatechs, swelling DIP Secudganth®) 10 The mixture was further neutralized and subjected to a roughening treatment after being immersed for 5 minutes in an aqueous solution of 8 〇 <t of potassium persulfate ("c〇ncentrate compact CP" manufactured by Admatech Co., Ltd.). After the steps of degreasing, catalyst application, and activation, an electroless copper plating film of about Ιμηι and electroplating copper 30 μm was formed in a hot air drying apparatus at 2 Torr. (: The annealing treatment was carried out for 4 minutes in the 4th step. A test piece of l〇〇mmx20nini was produced according to JIS-C-6481, and the peel strength at 23 ° C was measured. The results are shown in Table 3. 5. Moisture peeling (Ν' The test piece of l〇〇nim><20 mm obtained as described above was subjected to one-side etching, and was treated by a pressure cooker at 121 ° C and a humidity of 1% for 72 hours. The peel strength measurement was based on JIS- C-6481. The results are shown in Table 3. 6. Fine line processability evaluation The appearance inspection and conduction test of the thin line of the L/S=12/12 pattern obtained in the examples and the comparative examples by using a laser microscope The results are shown in Table 3. The results are shown in Table 3. The symbols are as follows: ◎: There is no problem in shape and conduction. No knowledge, no wiring, no problem. X: Short circuit, wiring cut Case 7. Insulation reliability evaluation replaces the solder resistance on the pattern of L / s = 丨 2 / 12 obtained in the examples and comparative examples. _ layer / hardened with 4 layers (Sumitomo Electric Wood, dedicated gs) , continuous evaluation under conditions of temperature not, humidity 85%, and application of μ 3 · 3 ν Insulation resistance. In addition, (4) Anti-value coffee is regarded as a failure. The results are shown in Table 3. The symbols are as follows: ◎: No problem for more than 300 hours 150: 150~ less than 300 hours X: less than 150 hours 8. Semiconductor device Warpage evaluation regarding the dimensions of the main conductor device obtained in the examples and comparative examples
MmmxHnnn於室溫及26(rc下讀曲,係制溫度可變雷 射三維測量機(日立科技與服務公司製,形式 LS220-MT! 00MT5 0),並以半導體元件面為下之^式役置在 上述測量機之樣本腔室中,測量高度方向(變位,^位差 最大之值視為翹曲量。結果示於表3。忽% 付唬係如下述。 常溫(23°C) ◎ : < 150μιη 100129155 64 201213112MmmxHnnn reads music at room temperature and 26 (rc), and manufactures a temperature-variable laser three-dimensional measuring machine (manufactured by Hitachi Technology and Services Co., Ltd., form LS220-MT! 00MT5 0), and is based on the semiconductor component surface. Placed in the sample chamber of the above measuring machine, the height direction (displacement, the maximum value of the difference is regarded as the amount of warpage. The results are shown in Table 3. The % is the following. Normal temperature (23 ° C) ◎ : < 150μιη 100129155 64 201213112
〇:150〜200μιη X · > 200μπι 260〇C ◎ : < ΙΟΟμπι 〇:100〜150/mi X : > 150μιη 9. 熱衝擊試驗 將在實施例及比較例中所獲得之半導體裝置於氟化處理 機中以-55°C30分鐘、125°C30分鐘設為一循環,每100循 環進行取出,利用導通檢測器評估有無異常。結果示於表 3。符號係如下述。 ◎ : 1000循環以上沒有異常 〇:500〜未滿1000循環有異常 X :未滿500循環有異常 10. 搖變比 藉由將在實施例及比較例中所獲得之樹脂清漆(II)在E型 黏度a十(東機產業公司製’ RE-550型)之旋轉數5rpm與50rpm 下之黏度比而可計算出(搖變比=5rpm/50rpm)。測量溫度設 在25°C。結果示於表3。 11. 塗佈面之均勻性 針對在實施例及比較例中所獲得之附有基底樹脂層之銅 箔目視觀察寬250mm、長5m之範圍。結果示於表3。符號 100129155 65 201213112 係如下述。 ◎:塗佈面上沒有缺陷 〇:實質上沒有問題的缺陷 X:大量缺陷發生 100129155 66 3 112 1X20 2 餐a 〇 5 ro 〇 CN 00 ΓΟ o <N ◎ X X 〇 X 比較 例4 I 〇 1-H rn 〇 v〇 ο 寸 〇 o X X X X X 〇 p X § T-H CN 00 ο r〇 d l〇 CN ◎ X X 〇 X <N £ ^ Ο r-H i—H X s CO g § g g g § § § § £ ^ Ο 1-H 1 1 1 VO ο 寸 d o 卜 CN X X 〇 〇 〇 ^ - Ο 1-H f—( ◎ s in cn ο r—4 ο o T-H (N ◎ 〇 〇 〇 ◎ 读2 Ο »-H t-H ◎ O c4 ΙΓϊ Ό\ Ο g Ο o r·^ <N ◎ ◎ 〇 〇 ◎ Ο r—Η ( ◎ o ί—H o CS ^Τ) α\ ο 00 ο o T·^ (N ◎ ◎ 〇 〇 ◎ 碧竺 Ο y—4 ◎ o r-H 0 01 00 ο !S Ο o (N 〇 〇 〇 〇 〇 ο 1-Η i-H ◎ o o CN ιη Ον Ο g d o 00 CN ◎ ◎ 〇 〇 〇 辑5 ο <N r-H ◎ o »-H o CN 〇\ ο g o o 艺 ◎ ◎ 〇 〇 〇 00 r-H ◎ o o (N 〇\ ο s o 00 ON (N ◎ ◎ ◎ ◎ ◎ 雀寸 ^H ◎ o 〇 CN νη Ον Ο s o VO ◎ ◎ ◎ ◎ ◎ 辑2 和軍 ο »-Η i—H ◎ o r-H 〇 CN OS Ο § o o »—H <T) (N ◎ ◎ 〇 〇 〇 母< 軍 ο τ-Η <N ◎ in 卜 ^Ti <N 00 ο s o o (N ◎ ◎ 〇 〇 〇 省二 ο m 〇 s ^T) JO ο cn O o CN 〇 〇 〇 〇 〇 0斗 S α Οη o 1 a Oh a a (¾ O kN/m kN/m s a a <n ϋ 1 1 評估内容 CTE(a2) 彈性模數(e2) 搖變比 (5rpm/50rpm) 塗佈面均勻性 i CTE㈣ 彈性模數0¾) SAP剝離強度 (A)(N) ^ δ 娥5 4ttL »—' 雙?3 « [r CTE(c^) 彈性模數(E3) 細線加工性(LS=12/12) 絕緣可靠性(LS=12/12, 3V條件下之BHAST) 纽曲(常溫) 翹曲06〇。〇 Λ ^ Is 41 3 9鍥 獎0 ^ 1^- 核心 材評 估(含 基底) 基板 評估 O i5 S' ^ ^ a, ^ s-6-02 201213112 【圖式簡單說明】 圖1係示意性表示第一實施形態之金屬包層積層板一例 的剖面圖。 圖2係表示第一實施形態之金屬包層積層板之製造方法 一例的圖。 圖3係示意性表示第一實施形態之金屬包層積層板之製 造方法一例的剖面圖。 圖4係示意性表示採用第一實施形態之金屬包層積層板 之印刷佈線基板之製造方法一例的剖面圖。 圖5係示意性表示採用第一實施形態之金屬包層積層板 之印刷佈線基板之製造方法一例的剖面圖。 圖6係示意性表示採用第一實施形態之金屬包層積層板 之半導體裝置一例的圖。 圖7係示意性表示第二實施形態之金屬包層積層板的剖 面圖。 圖8係表示第二實施形態之金屬包層積層板之製造方法 一例的圖。 圖9係示意性表示採用第二實施形態之金屬包層積層板 之印刷佈線基板之製造方法一例的剖面圖。 圖10係示意性表示採用第二實施形態之金屬包層積層板 之印刷佈線基板之製造方法一例的剖面圖。 【主要元件符號說明】 100129155 68 201213112 1 la 2 ψ ' 3 3a 10 11 11a 12 13 13a 14 15 16 31 # 32 42 45 101 金屬包層積層板(Metal-clad-laminated board) 附有金屬箔之預浸體(Prepreg with metal foil) 附有基底樹脂層之金屬箔(Metal foil with primer resin layer) 金屬包層積層板(Metal-clad-laminated board) 附有金屬箔之預浸體(Prepreg with metal foil) 絕緣樹脂薄片(Insulation resin sheet) 預浸體(Prepreg) 半硬化之預浸體(Semicured prepreg) 基底樹脂層(Primer resin layer) 金屬箔(Metal foil) 金屬層(Metal layer) 纖維基材(Fiber base material) 絕緣樹脂層(Insulation resin layer) 剝離薄片(Release sheet) 第一附有薄膜之絕緣樹脂薄片(Insulating resin sheet with first film) 第二附有薄膜之絕緣樹脂薄片(Insulating resin sheet with second film) 附有載體之預浸體(Prepreg with carrier) 附有載體之預浸體(Prepreg with carrier) 纖維基材(Fiber base material) 100129155 69 201213112 102 103 104 105 106 108 217 218 220 221 222 222a 223 224 226 325 327 328 329 330 含浸槽(Impregnation tank) 樹脂清漆(Resin varnish) 浸潰滾筒〇Dip roll) 擠壓滾筒(Squeeze roll) 乾燥機(Dryer) 上部滾筒(Upper roll) 内層電路(Internal-layer circuit) 内層電路基板(Internal-layer circuit board) 外層電路(External-layer circuit) 開口部(Opening) 開口部(Opening) 開口部(Opening) 導體短柱(Conductive post) 焊錫阻抗(Solder resist) 印刷佈線板(Print wiring board) 半導體裝置(Semiconductor device) 連接用電極部(Electrode part for connection) 半導體元件(Semiconductor chip) 焊錫凸塊(Solder bump) 液狀密封樹脂(Liquid encapsulation resin) 100129155 70〇: 150 〜 200 μιη X · > 200 μπι 260 〇 C ◎ : < ΙΟΟμπι 〇: 100 〜 150 / mi X : > 150 μηη 9. Thermal shock test The semiconductor device obtained in the examples and the comparative examples was used for fluorine. The treatment machine was set to one cycle at -55 ° C for 30 minutes and 125 ° C for 30 minutes, and was taken out every 100 cycles, and the presence or absence of abnormality was evaluated by a conduction detector. The results are shown in Table 3. The symbols are as follows. ◎ : No abnormality in 1000 cycles or more 500: 500 to less than 1000 cycles have an abnormality X: less than 500 cycles have an abnormality 10. The shaking ratio is obtained by using the resin varnish (II) obtained in the examples and the comparative examples in E The viscosity of the type a (manufactured by Toki Sangyo Co., Ltd. 'RE-550 type) was calculated by the rotation ratio of 5 rpm and 50 rpm (shake ratio = 5 rpm / 50 rpm). The measurement temperature is set at 25 °C. The results are shown in Table 3. 11. Uniformity of coated surface The copper foil with the base resin layer obtained in the examples and the comparative examples was visually observed to have a width of 250 mm and a length of 5 m. The results are shown in Table 3. Symbol 100129155 65 201213112 is as follows. ◎: No defects on the coated surface 〇: Defects substantially free of defects X: A large number of defects occurred 100129155 66 3 112 1X20 2 Meals a 〇5 ro 〇CN 00 ΓΟ o <N ◎ XX 〇X Comparative Example 4 I 〇1 -H rn 〇v〇ο inch〇o XXXXX 〇p X § TH CN 00 ο r〇dl〇CN ◎ XX 〇X <N £ ^ Ο rH i—HX s CO g § ggg § § § § £ ^ Ο 1-H 1 1 1 VO ο 寸 do 卜 CN XX 〇〇〇 ^ - Ο 1-H f—( ◎ s in cn ο r—4 ο o TH (N ◎ 〇〇〇 ◎ Read 2 Ο »-H tH ◎ O c4 ΙΓϊ Ό \ Ο g Ο or·^ <N ◎ ◎ 〇〇 ◎ Ο r—Η ( ◎ o ί—H o CS ^Τ) α\ ο 00 ο o T·^ (N ◎ ◎ 〇〇 ◎ 碧竺Ο y-4 ◎ o rH 0 01 00 ο !S Ο o (N 〇〇〇〇〇ο 1-Η iH ◎ oo CN ιη Ον Ο gdo 00 CN ◎ ◎ 〇〇〇 5 5 ο <N rH ◎ o »-H o CN 〇\ ο goo Art ◎ ◎ 〇〇〇00 rH ◎ oo (N 〇\ ο so 00 ON (N ◎ ◎ ◎ ◎ ◎ 雀 inch ^H ◎ o 〇CN νη Ον Ο so VO ◎ ◎ ◎ ◎ ◎ Series 2 and Army ο »-Η i H ◎ o rH 〇CN OS Ο § oo »—H <T) (N ◎ ◎ 〇〇〇母< 军ο τ-Η <N ◎ in 卜^Ti <N 00 ο soo (N ◎ ◎ 〇〇〇省二ο m 〇s ^T) JO ο cn O o CN 〇〇〇〇〇0斗S α Οη o 1 a Oh aa (3⁄4 O kN/m kN/msaa <n ϋ 1 1 Assessment content CTE(a2) Elastic modulus (e2) Shake ratio (5 rpm/50 rpm) Uniformity of coated surface i CTE (4) Elastic modulus 03⁄4) SAP peel strength (A)(N) ^ δ 娥5 4ttL »—' Double? 3 « [r CTE(c^) Elastic modulus (E3) Thin line workability (LS=12/12) Insulation reliability (LS=12/12, BHAST under 3V) New song (normal temperature) Warp 06〇 . 〇Λ ^ Is 41 3 9 Award 0 ^ 1^- Core material evaluation (including substrate) Substrate evaluation O i5 S' ^ ^ a, ^ s-6-02 201213112 [Simplified illustration] Figure 1 is a schematic representation A cross-sectional view of an example of a metal clad laminate according to the first embodiment. Fig. 2 is a view showing an example of a method of producing a metal clad laminate according to the first embodiment. Fig. 3 is a cross-sectional view schematically showing an example of a method of producing a metal clad laminate according to the first embodiment. Fig. 4 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board using the metal clad laminate according to the first embodiment. Fig. 5 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board using the metal clad laminate according to the first embodiment. Fig. 6 is a view schematically showing an example of a semiconductor device using the metal clad laminate according to the first embodiment. Fig. 7 is a cross-sectional view schematically showing a metal clad laminate according to a second embodiment. Fig. 8 is a view showing an example of a method of producing a metal clad laminate according to a second embodiment. Fig. 9 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board using the metal clad laminate according to the second embodiment. Fig. 10 is a cross-sectional view schematically showing an example of a method of manufacturing a printed wiring board using the metal clad laminate according to the second embodiment. [Description of main component symbols] 100129155 68 201213112 1 la 2 ψ ' 3 3a 10 11 11a 12 13 13a 14 15 16 31 # 32 42 45 101 Metal-clad-laminated board Pre-attached with metal foil Prepreg with metal foil Metal foil with primer resin layer Metal-clad-laminated board Metal foil prepreg (Prepreg with metal foil) Insulation resin sheet Prepreg Semi-cured prepreg Primer resin layer Metal foil Metal layer Fiber substrate (Fiber) Insulation resin sheet (Insulation resin sheet) First insulating film sheet with first film (Insulating resin sheet with second film) Prepreg with carrier Prepreg with carrier Fiber base material 100129155 6 9 201213112 102 103 104 105 106 108 217 218 220 221 222 222a 223 224 226 325 327 328 329 330 Impregnation tank Resin varnish Dip roll Squeeze roll Dryer (Dryer) Upper Roller Internal-layer circuit Internal-layer circuit board External-layer circuit Opening (Opening) Opening (Opening) Conductive post Solder resist Printed wiring device Semiconductor device Electrode part for connection Semiconductor chip Solder bump Liquid encapsulation resin 100129155 70
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| Country | Link |
|---|---|
| JP (1) | JP2012045887A (en) |
| KR (1) | KR20120021243A (en) |
| TW (1) | TW201213112A (en) |
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| TWI765998B (en) * | 2017-03-28 | 2022-06-01 | 日商昭和電工材料股份有限公司 | Prepreg for coreless substrate, coreless substrate and semiconductor package |
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2010
- 2010-08-30 JP JP2010192273A patent/JP2012045887A/en active Pending
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2011
- 2011-08-16 TW TW100129155A patent/TW201213112A/en unknown
- 2011-08-29 KR KR1020110086606A patent/KR20120021243A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI479366B (en) * | 2012-10-02 | 2015-04-01 | Chicony Electronics Co Ltd | A thin press type key structure |
| CN107432089A (en) * | 2015-02-10 | 2017-12-01 | 英特尔公司 | Layer insulation resin film, layer insulation resin film and printed wiring board with bonding auxiliary layer |
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| CN109644566A (en) * | 2016-08-15 | 2019-04-16 | 日立化成株式会社 | The adhesive film of multilayer printed circuit board |
| CN109644566B (en) * | 2016-08-15 | 2023-08-08 | 株式会社力森诺科 | Adhesive films for multilayer printed wiring boards |
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| TWI765998B (en) * | 2017-03-28 | 2022-06-01 | 日商昭和電工材料股份有限公司 | Prepreg for coreless substrate, coreless substrate and semiconductor package |
| US11581212B2 (en) | 2017-03-28 | 2023-02-14 | Showa Denko Materials Co., Ltd. | Prepreg for coreless substrate, coreless substrate and semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012045887A (en) | 2012-03-08 |
| KR20120021243A (en) | 2012-03-08 |
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