TW201213571A - Preparation method of on-chip passive component - Google Patents

Abstract

The present invention relates to a preparation method of an on-chip passive component, including the following process: using vacuum sputtering to form a conductive electrode of the on-chip passive component, covering spalling lines with a removable masking film before vacuum sputtering, and finally rapidly removing them after vacuum sputtering. Therefore, this invention has the advantages of reducing cost, promoting production rate and decreasing the thickness of products.

Description

201213571 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a process for a passive component, and more particularly to a process for a passive component of a wafer. [Prior Art] In recent years, due to the popular application of surface adhesion technology, passive components have been promoted to be wafer-driven. The passive component of the wafer can be a device having a single function, such as a resistor, a valley, an inductor, or a device of a composite component, such as a RC network, an exclusion resistor, and the like. Based on cost considerations, the fabrication of passive components for wafers has always been a thick film process, but it is now increasingly seen that thin film processes are used in the fabrication of passive components for wafers and are becoming more common. The thick film process adopts screen printing technology, and the colloid is printed on the wafer substrate by means of blade extrusion, and then dried and sintered, and the product line width is above ΙΟΟμπι, and the thickness thereof is also about 5~1 〇μιη. There are technical limits and difficulties in the size reduction and product stability. The thin film process uses a micro-etching technique to draw a circuit on a wafer substrate. The line width can be controlled below 1 〇μηη, and the thickness of the produced mi can be controlled within the range of (JO)~1μηι. Compared with the thick film process, the thin film process There are more possibilities for product volume miniaturization and improved precision design. However, even if the main structure of the passive component of the wafer is fabricated using a thin tantalum process, the conductive electrode of the passive component of the wafer is still printed by using a thick film of precious metal such as silver paste. Therefore, the cost is higher and the thickness of the passive component of the wafer is thicker. Therefore, a process for reducing the cost of the wafer, increasing the production rate, and reducing the thickness of the product is a process of the passive component of the wafer. 201213571 SUMMARY OF THE INVENTION ―, is to propose a process for the passive components of wafers. The purpose of the invention is to propose a low-cost passive component of the wafer = the purpose of the invention is to propose a high-production rate wafer passive system. The purpose of the 'is to propose a low-thickness wafer passive component 2 according to the invention' The process of the device is included in the ^ _ line of the wafer substrate - the secret film, the vacuum insulation properties cover the second mask film and expose the conductive region, and then the vacuum blue conductive layer, ^ and > monthly removal of the first - mineral film And the second masking film. The best conductive layer is made of a lower cost conductive material to reduce the thickness: and the conductive layer is formed by vacuum sputtering, thereby reducing the product and drying and sintering. Steps, thereby increasing the production rate. [Embodiment] In the process of the passive component of the wafer of the present invention, each main step view and phase diagram. When the passive component of the wafer is fabricated, the wafer substrate 10 is prepared, and the γ-direction is oriented. Stripping line 12 and a number of y-direction (four) lines 14 to define each one-day surprise to create a W-like piece. The wafer, set; mother Qing Yuan will use Shi Xiwei Huaxu, h * board 0 can be smashed , glass, and its materials shall be suitable for subsequent vacuum splashing. As shown in Figure 2, 201213571

No, the erasable masking film 16 is covered on the peeling line 12 in the _ χ direction of the crystal plate 1G by exposure or printing. Preferably, the material of the thief μ is a photoresist, a glass ink or an epoxy resin which is easily spray-cleaned after heating. After the absence, as shown in Fig. 3, the vacuum is characterized by a layer 18. In the vacuum frequency process, one or more stamps and vacuum materials are applied to form the electrical property layer 18 according to the function and structural design of the passive components of the wafer, which is the main structure of the passive component of the wafer, and Is familiar with 眺. After completing the main structure of the crystal device, as shown in FIG. 4, the erasable shielding film 20 is covered by exposure or printing, and the predetermined conductive region 22 is exposed in the (four) line 14 of the 丫 direction, and then As shown in FIG. 5, the vacuum surface conductive layer 24 is provided. Preferably, the dry material forming the conductive layer 24 is made of a material having good electrical conductivity such as a steel-based alloy. The thickness of the V-electrode layer 24 is between 015 and 1 μm. Then, as shown in FIG. 6, the electrical property layer 18 and the conductive layer 24 on the screen are also cleaned by an ultrasonic disk or brushed or sponged in water or 〉 Wash the masking film 16 and 2〇 in the granules. After the masking films 16 and 20 are removed, the vias become separate blocks forming the conductive electrodes of the passive components of the wafer. The wafer substrate 10 is subjected to stripping, money side guiding, dicing, water plating, etc., to complete the fabrication of passive components of the wafer. As described in the above embodiments, the present invention uses a copper-based alloy or the like as a dry material, and the outer space is reduced to form a conductive layer 24. Compared with the prior art, in addition to reducing the cost, the thick film printing is dried and removed. The steps of sintering and the like, and the thickness of the conductive electrode can be reduced, thereby reducing the product thickness of the passive component of the wafer. [Simple description of the drawing] 201213571 Fig. 1 to 6 are schematic diagrams showing the main steps of the passive component process of the wafer. [Main component symbol description] 10 wafer substrate 12 stripping line 14 stripping line 16 masking film

18 Electrical property layer 20 Masking film 22 Conductive zone 24 Conductive layer

Claims (1)

201213571 Seven patent application scope: 1. The process of passive components of a wafer, comprising the following steps: a wafer substrate of a first-side __ two-direction stripping line; covering the first masking film in the first direction stripping line; vacuum a conductive property layer; covering the first masking film and exposing the conductive region; vacuum sputtering the conductive layer; and removing the first-masking film and the second masking film. The material of the epoxy ruthenium film covering the first-masking film in which the first-direction peeling ink or the solvent is easily washed in the solvent is a photoresist or a glass oil. 4. The process of claim 1 is The step of the true line material /, the frequency Wei layer includes the cover 6 5. According to the process of claim 1, the method of forming the second film and exposing the conductive area by the method of the intermediate medium, such as the process of the item 1 Easily solvent after ink or heating # ^ The material of the masking film is photoresist, glass oil 7. If the request is made of a heart-shaped alloy, it is a vacuum splash. / i The step of sputtering the conductive layer comprises a process of copper base 9: item 1 wherein the thickness of the conductive layer is 0 15 9. The process of claim 1 is between (10) and 1 handsome. side. The tree electrical area is located in the second direction of the splitting line as claimed in claim 1 ♦, the shooting _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The first masking film and the second masking film are brushed in water or solvent.