201213701 六、發明說明： - 【發明所屬之技術領域】 、 I發明係有關於一種使用量子點之光源模組、運用該 光源模組之背光單元、顯示設備以及照明設備。 【先前技術】 I子點是具有等於或小於約10奈米（nm)之直徑之奈 米晶體（nano Crystal)，是半導體材料組成，並引起量子 限制效應（quantum confinement effect)。相較於典型的 磷（phosphor)，量子點在較窄之波長帶產生更密集的光。 激態的電子從導帶傳輸到價帶時，量子點發出光，並具有 即使為相同材料也會有光之波長按粒子尺寸而改變之特 性。由於光之波長按照量子點尺寸而改變，故藉由控制量 子點尺寸可獲得具有所需之波長區域之光。 量子點是自然地配位並分散在有機溶劑裡。如果量子 點的分散不恰當或暴露在氧氣或濕氣中，則光發射效率會 降低。為了解決這個問題，已開發一種以有機材料或具有 大帶隙之材料覆蓋量子點之方法。然而，上述方法會有製 程或成本上之實用性的問題。因此，需要一種以較高的光 發射效能來更加穩定地利用量子點之方法。例如，藉由插 入有機溶劑或聚合物而保護量子點免受氧氣或濕氣之方法， 其中教示的是將量子點分散至聚合物光槽（p〇lymer cell) 或玻璃光槽（glass cell)中，並試圖用在照明設備中。 【發明内容】 本發明提供一種能穩定使用量子點之光源模組、運用 3 95230 201213701 顯示設備以及照明設備。 該光源模組之背光單元 依據本發明之-態樣，提供一種使用量子點之光源模 組’该光源模組包括：包含基板和安裝於基板上之複數個發 光裝置晶片之發光裝置封震件，和朝發光方向置於發光裝 置封裝件上之量子點密封封裝件，該量子點密封封裝件包 含密封構件並且該量子點藉由該密封構件密封。 該量子點密封賊件可直接接合於該發光裝置封裝件。 或者’該量子點密封封裝件與該發光裝置封裝件分離。在 此情況下，光賴組可復包含支撐構件以切該量子點密 封封裝件而與該發光裝置封裝件分離。 該在封構件可以疋平板狀管。而且，該密封構件可以 是條狀管。該密封構件可以是玻璃管或聚合物管。 該複數個發光裝置晶片騎齊成—列或複數列。而且， 該複數個發絲置晶片排列為直線、曲線或預定圖案。在 此情況下，該密封構件形成對應該複數個發光裝置晶片之 排列之直線、曲線或預定圖案。 該量子點分散於有機溶劑或聚合物樹脂。在此情況下， 該有機溶劑包括曱笨、氯仿和乙醇的至少其中之一。而且， 該I &物树月曰包括環氧、石夕、聚乙烯和丙烯酸酯的至少其 中之一。 該置子點包括以矽（Si)為基礎的奈米晶體、以n-VI 族為基礎的化合物半導體奈米晶體、以ΙΠ_ν族為基礎的 化合物半導體奈米晶體、以IV_VI為基礎的化合物半導體 奈米晶體和其混合物的其中之一。從CdS，CdSe，CdTe， 95230 4 201213701201213701 VI. Description of the invention: - [Technical field to which the invention pertains] The invention of the invention relates to a light source module using a quantum dot, a backlight unit using the light source module, a display device, and a lighting device. [Prior Art] The I sub-point is a nano crystal having a diameter equal to or smaller than about 10 nanometers (nm), which is a semiconductor material composition and causes a quantum confinement effect. Compared to typical phosphors, quantum dots produce denser light in narrower wavelength bands. When the excited electrons are transported from the conduction band to the valence band, the quantum dots emit light and have the property that the wavelength of the light changes according to the particle size even for the same material. Since the wavelength of light varies according to the size of the quantum dot, light having a desired wavelength region can be obtained by controlling the size of the quantum dot. Quantum dots are naturally coordinated and dispersed in organic solvents. If the quantum dots are not properly dispersed or exposed to oxygen or moisture, the light emission efficiency is lowered. In order to solve this problem, a method of covering quantum dots with an organic material or a material having a large band gap has been developed. However, the above method has problems in terms of process or cost. Therefore, there is a need for a method for more stably utilizing quantum dots with higher light emission performance. For example, a method of protecting quantum dots from oxygen or moisture by inserting an organic solvent or polymer, wherein teaching is to disperse quantum dots into a polymer light cell or a glass cell. Medium and tried to use it in lighting equipment. SUMMARY OF THE INVENTION The present invention provides a light source module capable of stably using quantum dots, and uses 3 95230 201213701 display devices and lighting devices. The backlight unit of the light source module provides a light source module using quantum dots according to the aspect of the present invention. The light source module includes: a light-emitting device vibration-insulating member including a substrate and a plurality of light-emitting device chips mounted on the substrate And a quantum dot sealing package placed on the light emitting device package in a light emitting direction, the quantum dot sealing package comprising a sealing member and the quantum dot sealed by the sealing member. The quantum dot sealing thief member can be directly bonded to the illuminating device package. Alternatively, the quantum dot sealing package is separated from the light emitting device package. In this case, the light-receiving group may include a support member to cut the quantum dot sealing package to be separated from the light-emitting device package. The sealing member can be a flat tube. Moreover, the sealing member may be a strip tube. The sealing member can be a glass tube or a polymer tube. The plurality of illuminator chips ride in a column or a plurality of columns. Moreover, the plurality of hairline wafers are arranged in a straight line, a curved line or a predetermined pattern. In this case, the sealing member forms a straight line, a curved line or a predetermined pattern corresponding to the arrangement of the plurality of light-emitting device wafers. The quantum dots are dispersed in an organic solvent or a polymer resin. In this case, the organic solvent includes at least one of hydrazine, chloroform and ethanol. Moreover, the I & moon tree includes at least one of epoxy, stellite, polyethylene, and acrylate. The set point includes a nanocrystal based on yttrium (Si), a compound semiconductor nanocrystal based on n-VI group, a compound semiconductor nanocrystal based on ΙΠν family, and a compound semiconductor based on IV_VI One of nanocrystals and mixtures thereof. From CdS, CdSe, CdTe, 95230 4 201213701
ZnS ， ZnSe ， ZnTe ， HgS ， HgSe ， HGTE ’ CdSeS ’ CdSeTe ’ CdSTe ， ZnSeS ， ZnSeTe ’ ZnSTe ， HgSeS ’ HgSeTe ’ HgSTe ’ CdZnS，CdZnSe，CdZnTe，CdHgS，CdHgSe，CdHgTe ’ HgZnS ’ HgZnSe ’ HggZnTe ’ CdZnSeS ’ CdZnSeTe ’ CdZnSTe ’ CdHgSeS， CdHgSeTe ， CdHgSTe ， HgZnSeS ， HgZnSeTe 和 HgZnSTe 擇 一形成以該II-VI族為基礎的化合物半導體奈米晶體。從 GaN，GAP ’ GaAs ’ AIN ’ A1P ’ AlAs，InN，InP，InAs，GaNP， GaNAs ’ GaPAs，A1NP，AlNAs，AlPAs，InNP ’ InNAs，InPAs， GaAlNP ’ GaAlNAs，GaAlPAs ’ GalnNP，GalnNAs，GalnPAs，ZnS , ZnSe , ZnTe , HgS , HgSe , HGTE ' CdSeS ' CdSeTe ' CdSTe , ZnSeS , ZnSeTe ' ZnSTe , HgSeS ' HgSeTe ' HgSTe ' CdZnS , CdZnSe , CdZnTe , CdHgS , CdHgSe , CdHgTe ' HgZnS ' HgZnSe ' HggZnTe ' CdZnSeS ' CdZnSeTe 'CdZnSTe 'CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe form a compound semiconductor nanocrystal based on the II-VI group. From GaN, GAP' GaAs ' AIN ' A1P ' AlAs, InN, InP, InAs, GaNP, GaNAs' GaPAs, A1NP, AlNAs, AlPAs, InNP 'InNAs, InPAs, GaAlNP 'GaAlNAs, GaAlPAs ' GalnNP, GalnNAs, GalnPAs,
InAlNP，InAlNAs和InAlPAs擇一形成以該III-V族為基 礎的化合物半導體奈米晶體。以該IV-VI族為基礎的化合 物半導體奈米晶體可由SbTe形成。 該量子點包括第一量子點，其尺寸允許峰值波長在綠 光之波長帶。而且，該量子點包括第二量子點，其尺寸允 許峰值波長在紅光之波長帶。 該複數個發光裝置晶片可以是發光二極體（LED)晶片 或是有機發光二極體（〇LED)晶片。 該發光裝置封裝件可以是晶片黏在基板上（c〇B)型封 裝件。例如，該基板可為印刷電路板（pcB)，以及該複數個 發光裝置晶片直接安裝於該基板。此時之光源模組，復包 括透射性樹脂封袭部分，以包覆複數個發光裝置晶片，並 製備於該基板上。 §板了為印刷電路板，每一個或多個該複數個發光 片封裝件被封裝成晶片封裝件，而該晶片封裝件安 95230 5 201213701 裝於該基板上。 該發光裝置封裝件410可以是晶片黏在引線框架上 (C0L)型封裝件。例如，該基板包括引線框架用於讓該複數 個發光裝置晶片彼此電路連接，和模具構件以固定該複數 個發光裝置晶片和該引線框架。 該複數個發光.裝置晶片是藍色Led晶片，而其中該量 子點包括第一量子點，其尺寸允許峰值波長在綠光之波長 帶，和第二量子點，其尺寸允許峰值波長在紅光之波長帶。 從該藍色LED晶片發出之藍光具有435至470奈米之 波長，從該第一量子點發出之綠光之色度座標是在國際照 明委員會（CIE; Commission Internationale de l’Eclairage) CIE 1931色度座標系統之由四個頂點 (0. 1270，0. 8037)，（0. 4117，0.5861)，（0.4197，0.5316)， 和（0. 2555，0. 5030)圍繞之區域，和從該第二量子點發出 之紅光之色度座標是在國際照明委員會（CIE ; Commission Internationale de l’Eclairage) CIE 1931 色度座標系 統之由四個頂點（0.5448，0.4544)，（0.7200，0.2800)， (0.6427，0.2905)，和（0.4794，0.4633)圍繞之區域。 從該第一量子點發出之綠光之色度座標是在國際照 明委員會（CIE; Commission Internationale de l’Eclairage) CIE 1931色度座標系統之由四個頂點 (0. 1270，0. 8037)，（0. 3700，0. 6180)，（0. 3700，0. 5800) 和（0.2500，0.5500)圍繞之區域，和從該第二量子點發出 之紅光之色度座標是在照明委員會（CIE ; Commission 6 95230 201213701InAlNP, InAlNAs and InAlPAs are alternatively formed into the compound semiconductor nanocrystals based on the III-V group. The compound semiconductor nanocrystal based on the IV-VI group can be formed of SbTe. The quantum dot includes a first quantum dot sized to allow a peak wavelength to be in the wavelength band of green light. Moreover, the quantum dot comprises a second quantum dot sized to allow the peak wavelength to be in the wavelength band of red light. The plurality of illuminator wafers may be light emitting diode (LED) wafers or organic light emitting diode (ITO) wafers. The illuminating device package may be a wafer-on-substrate (c〇B) type package. For example, the substrate can be a printed circuit board (pcB), and the plurality of light emitting device wafers are directly mounted to the substrate. The light source module at this time comprises a transmissive resin encapsulation portion for coating a plurality of illuminating device wafers and preparing the substrate. The board is a printed circuit board, and each of the plurality of the plurality of light emitting sheet packages is packaged into a chip package, and the chip package is mounted on the substrate. The light emitting device package 410 may be a wafer bonded to a lead frame (COL) type package. For example, the substrate includes a lead frame for electrically connecting the plurality of light emitting device wafers to each other, and a mold member to fix the plurality of light emitting device wafers and the lead frame. The plurality of illuminating device wafers are blue Led wafers, and wherein the quantum dots comprise first quantum dots sized to allow peak wavelengths in the wavelength band of green light, and second quantum dots sized to allow peak wavelengths in red light The wavelength band. The blue light emitted from the blue LED chip has a wavelength of 435 to 470 nm, and the chromaticity coordinate of the green light emitted from the first quantum dot is CIE; Commission Internationale de l'Eclairage CIE 1931 color The coordinate system consists of four vertices (0. 1270, 0. 8037), (0. 4117, 0.5861), (0.4197, 0.5316), and (0. 2555, 0. 5030), and from the The chromaticity coordinates of the red light emitted by the second quantum dot are at the four vertices (0.5448, 0.4544), (0.7200, 0.2800) of the CIE 1931 chromaticity coordinate system of the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage), ( 0.6427, 0.2905), and (0.4794, 0.4633) surrounding the area. The chromaticity coordinates of the green light emitted from the first quantum dot are four vertices (0. 1270, 0.803) of the CIE 1931 Chromosymmetry coordinate system of the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage). (0. 3700, 0. 6180), (0. 3700, 0. 5800) and (0.2500, 0.5500) surrounding the region, and the chromaticity coordinates of the red light emitted from the second quantum dot are at the Lighting Commission (CIE) ; Commission 6 95230 201213701
Internationale de l’Eclairage) CIE 1931 色度座標系 統之由四個頂點（0· 6000 ’ 0. 4000)，（〇. 7200，〇· 2800)， (0. 6427，0. 2905)，和（0. 6000，〇. 4000)圍繞之區域。 該藍色LED晶片具有10至30奈米之全寬半高， 5亥第一罝子點有10至60奈米之FWHM ’和該第二量子點有 30至80奈米的FWHM。 該複數個發光裝置晶片是紫外光LED晶片，而該量子 點包括第一量子點，其尺寸允許峰值波長在藍光之波長 帶；第二量子點，其尺寸允許峰值波長在綠光之波長帶； 和第一量子點，其尺寸允許峰值波長在紅光之波長帶。 、依據本發明之另一態樣，提供一種包括使用量子點之 =源模組的背光單元，該光源模組包括：發光裝置封裝件， 3:基板和安裝於該基板上之複數個發光裝置晶片；量子 點=封封裝件’朝發光方向置於發光裝置封裝上，該量子 ==封裝件包含㈣構件且該量子賴由該密封構件密 及導板。 使用I;本發月之另-態樣，提供—種顯示備，其包括 件，、八έ之光源模組，該光源模組包括：發光裝置封裝 量子板和安褒於該基板上之複數個發光裝置晶片； 該量;在〜封裝件’朝發光方向置於發光裝置封裝件上’ 構件密件包含密封構件且該量子點藉由該密封 . 板，以及影像面板，用以顯示影像。 用量之另'態樣’提供一種照明設備，包括使 ."、模組，該光源模組包括：發光裝置封装件， 7 95230 201213701 包含基板和安裝於該基板上之複數個發光裝置晶片；量子 點密封封裝件，朝發光方向置於發光裝置封裝件上，該量 子點密封封裝件包含密封構件且該量子點藉由該密封構件 密封；以及電源供應單元’以供應電源至該光源模組。 電源可於照明設備外部備妥，而該電源供應單元可包 括用於接收電源之界面；和用於控制供應至該光源模組之 電源之電源控制單元。在某些情況下，該電源可備妥於照 明設備内。 【實施方式】 以下，將參照所附圖式說明本發明之實施形態來敘述 本發明。在圖式中，相同的元件符號表示相同的元件，並 且為求清楚說明’元件之大小或厚度可能誇大顯示。 第1圖係為依據本發明之一實施例之使用量子點151 之光源模組100之平面視圖。第2圖係為第1圖所示之光 源模組100之側面視圖。 參照第1和2圖，依據本實施例之光源模組1〇〇係為 白色光源，並且包括含有複數個發光裝置晶片130a和130b 之發光裝置封裝件110,以及朝發光方向置於發光裝置封 裝件110上之量子點密封封裝件150。 在發光裝置封裝件110中，發光裝置晶片130a和130b 是直接安裝在電路基板120上，如印刷電路板（PCB)。該發 光裝置晶片130a和130b可以是以氮化鎵（GaN)為基礎的發 光二極體（LED)晶片以用於發出藍光。但是，在某些情況 下’發光骏置晶片130a和130b可以是紫外光LED晶片。 8 95230 201213701 或者’發光裝置晶片130a和130b可以是有機發光二極體 (0LED)晶片或其他已知的發光裝置晶片。亦可安裝齊納二 極體晶片以保護發光裝置晶片130a和130b。複數個發光 裝置晶片130a和130b可使用倒裝晶片接合（flip chip bonding)方法或引線接合的方法打線。可以藉由透射性樹 脂封裝部分135包覆和保護發光裝置晶片i3〇a和i3〇b。 雖然發光裝置晶片130a和130b在第1和2圖中係以兩個 一對的方式由透射性樹脂封裝部分135所包覆，但本實施 例不限於此。例如，可藉由每個透射性樹脂封裝部分135 包覆一個、三個、或更多個發光裝置晶片130a* l3〇b。 或者，可以省略透射性樹脂封裝部分135。另外，發光裝 置晶片130a和130b在第1和2圖中係對齊成一列，但本 實施例不限於此。例如，發光裝置晶片130a* 13〇b可以 對齊成複數列’或可對齊成曲線或預定的圖案而不是一條 直線。該發光裝置封裝件11〇是晶片在電路板上（chip 〇n board ; COB)型封裝件之範例。 該量子點密封封裝件15〇係朝發光方向接合並置於發 光裝置封裝件110上。 量子點密封封裝件150包括密封構件155以及注入到 該密封構件155中的量子點ι51。該密封構件155保護量 子點151免受外部環境（如氧氣或濕氣）的影響，而且可以 是由透明材料形成的玻璃管或聚合物管。該密封構件155 可以是有直線形狀的管，即條狀管，對應於發光裝置晶片 130a和130b之排列。如果發光裝置晶片13〇8和i3〇b排 9 95230 201213701 列為曲線或預定的圖案’則密封構件155可以是相對應彎 曲的或有圖案的管，也可是平板狀的管，覆蓋發光裝置晶 片130a和130b所排列之整個區域。 該罝子點151是直徑約1至1〇奈米之奈米晶體，而 且是半導體材料組成’並引起量子限制效應。該量子點151 轉換發光裝置晶片130a和130b所發出的光的波長，並產 生波長轉換光，即螢光。 量子點151的例子包括以矽（Si)為基礎的奈米晶體、 以II-VI族為基礎的化合物半導體奈米晶體，以ιπ-ν族 為基礎的化合物半導體奈米晶體、以IV-νΐ族為基礎的化 合物半導體奈米晶體。根據本實施例，量子點151可以是 上述例子的其中一個或混合。 在這種情況下，從 CdS，CdSe，CdTe，ZnS，ZnSe，ZnTe， HgS，HgSe，HgTe ’ CdSeS，CdSeTe，CdSTe，ZnSeS，ZnSeTe， ZnSTe，HgSeS，HgSeTe，HgSTe，CdZnS，CdZnSe，CdZnTe， CdHgS ’ CdHgSe，CdHgTe，HgZnS，HgZnSe，HggZnTe，CdZnSeS ’ CdZnSeTe ， CdZnSTe ， CdHgSeS ， CdHgSeTe ， CdHgSTe ， HgZnSeS，HgZnSeTe 和 HgZnSTe 擇一可形成以 II-VI 族為 基礎之化合物半導體奈米晶體。從GaN，GAP，GaAs，AIN， A1P，AlAs，InN ’ InP，InAs，GaNP ’ GaNAs，GaPAs，A1NP， AlNAs ， AlPAs ， InNP ， InNAs ， InPAs ， GaAlNP ， GaAlNAs ， GaAlPAs ， GalnNP ， GalnNAs ， GalnPAs ， InAlNP ， InAlNAs 和InAlPAs擇一可形成以III-V族為基礎的化合物半導體 奈米晶體。可由例如SbTe形成以IV-VI族為基礎的化合物 10 95230 201213701 半導體奈米晶體。 該量子點151自然配位和分散在如有機溶劑或聚合物 樹脂的分散介質中並且由密封構件155加以密封。分散介 mu⑽不f彡《子點151之波長轉換效能的透明 介質’不會因為光而變質’也不會反射光或吸收光。例如， 有機溶劑可包括甲苯、氯仿和乙醇的至少直中一者，聚人 物樹脂可包括環氧、石夕、聚乙缔和丙埽酸㈣至少其；： 者。如果使用聚合物樹脂作為Μ 散於其中之聚合物樹脂可注入密 .，151刀 在封構件155 ’然後固化。 激態的電子從導帶傳輸到價 並具有即使為相同材料也會有头帶時，置子點151發出光’ 之特性。由於先之波長按料錄子尺寸而改變 由控制量子點151尺寸可獲得’+ 尺相改變，故藉 由適當變化奈米晶體之生長條$之波長區域之光。可藉 反條件而控制量子點n 如上所述，每個發光装置曰 .· 1之尺寸。 色LED晶片。在這種情況下，=咖和⑽可以是藍 為435至470奈米之光。同時，_色⑽晶片可發出主波長 許峰值波長在綠光之波長帶之第^點151可包括尺寸允 值波長在紅光之波長帶之第二玲一置子點，和尺寸允許峰 以適當控制第一和第二個量^子點。在這種情況下’可 峰值波長為500至550奈米，之尺寸，使第一量子點之 580至660奈米。 、而第二量子點之峰值波長是 同時，相較於典型的磷 產生更密集的光。因此， 子^ 151在較窄之波長帶 里子點15丨，第一量子點可有 95230 11 201213701 10至60奈米之全寬半尚（FWHM)，而該第二量子點有3〇至 80奈米的FWHM。同時，使用具有！〇至3〇奈来之FWM之 藍色LED晶片作為發光裝置晶片l3〇a*13〇b。 虽將發出不同顏色的光的量子點予以混合時 ，如果量 子點之顏色比率改變，則使用者可看到不同波長的光。為 了防止這個問題，需要以精確的密度和精確的比率來混合 材料。在混合量子點時，除了密度之外’還必須考慮量子 =發射效率。在使用LED封農件陣列(其中量子點係與 脂混合）之典型w光源中，密度的控制、均句性和 係受到限制，所_封裝件在這些條 件之間的色度座標可能會有偏差 中，當針對發光梦署44壯1 仗元，原模組100 x封裝件iio之複數個發光穿置0片 130a和13Gb準備量子點 赞尤裝置θ曰片 組100可具有均勾的 ’，、 時，整個光源模 除發光裝置封裝件而且’在光源模組⑽中， 封裝件150㈣發光 ’當侧地準備之量子點密封 所需的色度座標。和強度時，可以很容易地獲得 第3圖係為第1圖 長帶之光強度之！貞-不之光源模組刚發出的光之波 組100發出的光之:度^ ^圖係為第1圖所示之光源模 而 該光源模組刚可=域，示圖。 控制波長帶以獲得例 ' 工制董子點151之粒子尺寸 表1所示之特性。 95230 12 201213701 [表1] 藍 綠 紅 Wp (nm) 455 535 630 FWHM (nm) 20 30 54 在表1，Wp代表每一藍光、綠光、紅光的主波長，而 FWHM代表每一藍光、綠光、紅光的全寬半高。參考表1， 藍光自發光裝置晶片130a和130b發出，綠光和紅光從量 子點151發出，而且藍光、綠光、紅光有如第3圖所示之 光強度之分佈。 而且，波長帶可藉由控制量子點151之粒子尺寸而受 到控制，色度座標可依據粒子尺寸藉由控制量子點151之 密度而受到控制。因此，如第4圖所示，可控制量子點151 之粒子尺寸和密度，使第一量子點之綠光之色度座標是位 在國際照明委員會（CIE; Commission Internationale de l’Eclairage) CIE 1931色度座標系統中被四個頂點 (0. 1270，0. 8037)，（〇. 4117，0· 5861)，（0. 4197，0· 5316)， 和（0.2555，0.5030)圍繞之區域A，以及第二量子點之紅 光之色度座標位在國際照明委員會CIE 1931色度座標系統 中被四個頂點（0· 5448，0. 4544)，（0. 7200，0. 2800)， (0.6427，0.2905)，和（0.4794，0.4633)圍繞之區域 B。 如第4圖所示’具有以上之光之分佈之光源模組1〇〇於 CIE1931色度座標系統較典型使用磷的產品涵蓋更廣的區 域’相對於美國國家電視系統委員會（NTSC)具有等於或大 於95%之色彩再現性（c〇i〇r repr〇(jucti〇n)，並具有非常 13 95230 201213701 高強度的光發射。 此外，如上所述，由於量子點151較典型的磷在較窄 之波長帶產生更密集的光，所以第一和第二量子點可能在 色度座標的較窄區域。也就是說，可藉由使第一量子點之 綠光之色度座標位在CIE 1931色度座標系統圍繞之四個頂 點（0.1270,0.8037)，（0.3700,0.6180)，（0· 3700,0.5800 ) 和（0.2500，0.5500)之區域A’和第二量子點之紅光之色 度座標在CIE 1931色度座標系統圍繞之四個頂點 (0. 6000，0. 4000)，（0. 7200，0. 2800)(0. 6427，0· 2905)， 和（0.6000，0.4000)之區域B’而進一步增進色彩重現。 如上所述，該光源模組100可從發光裝置晶片130a 和130b的組合實現最高的色彩重現，和藉由定義發光裝置 晶片130a和130b的主波長和在CIE 1931色度座標系統之 第一和第二量子點之色度座標，將第一和第二量子點實現 到一定的範圍或區域。 在光源模組100中，發光裝置晶片130a和130b是藍 色LED晶片且量子點151波長轉換（wavelength-convert) 藍光成紅光和綠光。然而，本發明不限於此。例如，發光裝 置晶片130a和130b可以是紫外光LED晶片且可將量子點 151之粒子大小和密度控制成包括具有允許峰值波長是在 藍光之波長帶内之大小之第一量子點、具有允許峰值波長 是在綠光之波長帶内之大小之第二量子點和具有允許峰值 波長是在紅光之波長帶内之大小之第三量子點。在這種情 況下，發光裝置晶片130a和130b，即紫外光LED晶片，作 14 95230 201213701 為唯-的發白色光的量子點密封封裝件 第5圖係為依據本發明之另 ㈣^原 光源模組_之平面視圖。吏用量子點之 模組200之側面視圖。 、為弟5圖所示之光源 參照第5和6圖，依據本實施例 含有複數個發光裝置晶片23〇之發光畢/射駐、、且 包括 朝發光方向而置於發光裝置封裝件2 X 、旦件210，和 裝件⑽。該量子點密封封袈件15〇可以密封封 量子點密封封装件150相同。 一 m方例之 ==組200與先前實施例的光源模組⑽ =於::_封封裝件15〇和發光裝置封裝件Μ。是 二’：：也就疋說’在光源模組刚巾，量子點密封封裝 牛150疋直接接合於發光裝置封裝件ιι〇。然而，在 封封裝件⑽藉由額外的支樓構件24〇 =而與發光裝置封裝件21〇分離。該量子點密封封裝件 也能以可拆卸的方式讓支撐構件240支撐。在這種情 =下’光源模組200之光源特性可以很容易地藉由更換具 色度座標之不同特性之量子點密封封裝件15G而改變。 同時’發光裝置封裝件21() A⑽型封裝件，其中發 、，裳置as >{ 230係對齊成一排並直接安裝在電路基板 上’但不限於此。 ，第7圖係為依據本發明之另—實施例之使用量子點之 光源模組300之平面視圖。帛8圆係為第7圖所示之光源 模組300之侧面視圖。 95230 15 201213701 參照第7和8圖，依據本實施例之光源模組300係為 包括含有複數個發光裝置晶片331之發光裝置封裝件310, 和朝發光方向置於發光裝置封裝件310上之量子點密封封 裝件150。該量子點密封封裝件150可以與先前實施例之 量子點密封封裝件150相同。 該光源模組300與先前實施例的光源模組1〇〇和2〇〇 的不同之處在於發光裝置晶片封裝件330是接合於發光裝 置封裝件310中之電路基板320，如PCB。也就是說，在光 源模組100中，發光裝置晶片13〇a和i3〇b是直接安裝在 電路基板120上。然而，在光源模組3〇〇中，發光裝置晶 片331藉由另外使用模具構件（m〇id meffl|3er)335而個別被 封裝至發光裝置晶片封裝件330中，然後發光裝置晶片封裝 件330係安裝在電路基板320上。在發光裝置晶片封裝件 330中，供發光裝置晶片331接置之模具構件3犯的槽可形 成反射腔以改善自發光裝置晶片3 3 i發出的光的方向性。 雖然在第7和8圖之每個發光裝置晶片封裝件33〇是 安裝一個發光裝置晶片331，但可安裝兩個或多個發光裝 置晶片331或也可安裝齊納二極體晶片以保護發光裝置晶 片331。此外，雖然第7和8圖之量子點密封封裝件1 是接合在發餘置㈣件31G，但量子點密封封裝件15〇 =藉由在第6圖所示之額外的支撐構件24G切而與發光 裝置封裝件310分離。 ，第9圖係為依據本發明之另一實施例之使用量子點之 光源模組4GG之平面視圖。第1Q圖係為第9圖所示之光源 95230 16 201213701 模組400之側面視圖。 參照第9和10圖，依據本實施例之光源模組4〇〇係 為包括含有複數個發光裝置晶片430之發光裝置封裝件 410’和朝發光方向置於發光裝置封裝件41〇上之量子點密 封封裝件150。該量子點密封封裝件15〇可以與先前實施 例之量子點密封封裝件150相同。 忒光源模組400與先前實施例的光源模組、2〇〇 和300的不同之處在於發光裝置晶片封裝件41〇是晶片在 引線框架上（chipon lead-frame ; c〇L)型封裝件。也就是 說，雖然先前的實施例之發光裝置封裝件11〇，21〇，31〇 是COB型封裝件或晶片封裝件是安裝在電路基板上的封裝 件’但發歧置封裝件410是發練置晶片伽藉由引線 框架4!5而電路連接的亂型封裝件，而發光裝置晶片43〇 和引線框架415是藉由使用模具構件予以封裝。在發 光裝置封裝件4财，供發光裝置晶片侧接置之模 件420的凹槽可形成反射腔以改善自發光裝置晶片·發 出的光的方向性。 雖然在第9和1〇圖之每個模具構件42〇的凹槽是安 裝-個發光裝置晶片榻’但可安裝兩個❹個發光裝置 430。此外，雖然第9和1()圖量 接合在發光裝置封裝㈣，量子量件150是 , 置卞』在封封裝件150可藉 由在第6圖心之辦的切構件_切 封裝件410分離。 >、赞尤装置 95230 17 201213701 第11圖係為依據本發明之一實施例之背光單元一 意圖。. 不 參照第11圖，依據本實施例之背光單元是侧光式 (edge-type)背光單元，包括光導板55〇和置於該光^板 550之一側的光源模組51〇。在光源模組51〇中， 里卞點密 封封裝件515是朝發光方向置於發光裝置封裝件5丨1上 依據先前的實施例，該光源模組510可以是光源模組丨⑽， 200 ’ 300和400任何一個。 光導板550是用於導光之透明和平板型的構件。向外 導光之預定圖案可形成在光導板550之兩個表面的其中之 一上。該光源模組510置於光導板550之一側。因為光源 模組510之發光裝置封裝件511中之發光裝置晶片可以排 一列而量子點密封封裝件515可以是如上就第1和2圖所 述之棒型管’所以量子點密封封裝件515之發光表面可面 對該侧的光導板550。光源模組510發出的光穿過該侧的 光導板550而進入到光導板55〇，並且完全反射而擴散到 光導板550的每個地方。光導板550中完全反射的光係通 過光導板550之表面而向外發出，預定圖案係形成在光導 板550之表面（即發光表面）上。 第12圖係為依據本發明之一實施例之顯示設備之7^ 意圖。 參照第12圖，依據本實施例之顯示設備使用第11圖 所示的背光單元，該顯示設備包含光源模組510、光導板 550、光學薄獏56〇和影像面板57〇。光學薄膜560改善朝 95230 201213701 影像面板570照射之光之方向性，並且置於光導板55〇之 發光表面的一侧。光學薄膜56〇可包括，例如，棱鏡片或 擴散板。影像面板570是將電性影像信號轉換成影像的裝 置，例如’液晶顯示器（LCD)面板。光源模組510發出的 光穿過光導板550之一側，並如上就第丨丨圖所述通過光導 板550的發光表面而發出，然後穿過光學薄膜56〇以照射 影像面板570之後表面。 如上所述’藉由使用量子點密封封裝件，該光源模組 510可實現色彩重現大幅改善的白光，使所有發光裝置晶 片具有均勻的色度座標，從而可以大幅改善顯示設備之色 彩品質。此外，由於量子點密封封裝件之量子點係由密封 件與外部環境分開’故可穩定維持量子點，從而可大大提 高可靠性。 第13圖係為依據本發明之一實施例之照明設備6〇〇之 示意圖。參照第13圖’依據本實施例之照明設備6〇〇包括 光源模組610和供應光源模組6丨〇電源之電源供應單元6 5 〇。 依據先刖的實施例，該光源模組可以是光源模組 100 ’ 200 ’ 300和400任何一個。電源供應單元65〇可包 括用於接收電源之界面651，以及用於控制將被提供給光 源模組610之電源的電源控制單元655。界面651可包括 用於阻斷過電流的保險絲，以及用於屏蔽電磁干擾信號的 電磁屏蔽過濾器°電源可從照明設備6〇〇外部或照明設備 600内含之電池提供。如果供應交流電（AC)電源，電源控 制單元655則可包括用於將交流轉換成直流（DC)的整流 19 95230 201213701 單元’以及用於將直流（DC)電壓轉換成適於光源模組61〇 之電墨的恆壓控制單元。如果電源是具有適用於光源模組 610(如電池）之電壓的直流電源，則可以省略整流單元和十互 壓控制單元。另外，如果如AC-LED之裴置被用作為光源模 組610之發光裝置晶片，則AC電源可直接供應給光源模 組610，而在這種情況下，整流單元和恆壓控制單元也可 以省略。此外，電源控制單元655可控制色溫以實現贫據 人體敏感性的照明。 該照明設備600可應用於各種使用光源之裂置。例如 如上就第1和2圖所述，發光裝置晶片之排列和光源模名’ 610的量子點密封封裝件之形狀可設計成一條直線、一 曲線或預定的圖案。該照明設備600可以是用於 條 的白熾燈或日光燈的一般照明裝置，而在這種情况、典型 藉由控制光源模組610之量子點密封封裝件所使用=旦可 點之粒子尺寸而獲得廣泛的區域中之波長帶之光發射量子 依據本發明之上述實施例，可以實現下列功效、光譜。 第一，因為量子點所分散的有機溶劑或聚合物〜 而光源 額外的密封構件内，故可預防氧氣或濕氣的影^料在 模組可以在熱且潮濕、或熱環境中穩定工作。β 第二，因為量子點密封封裂件係共同地準備 發光裝置晶片使用，故可以簡化過程、提高 ，數個 降低製造成本。 '；以及 第三，因為量子點密封封教件係共同地準備 發光裝置晶片使用’故可抑制每個發光裝置晶片在 ^5230 20 201213701 備量子點磷時所造成之波長轉換光之在色彩分佈的偏差， 使得整個發光裝置晶片可有均勻的色度座標，以及可大幅 改善色彩重現。 雖然已特別參照例示實施例來顯示及敘述本發明，但 應了解到，技術領域中具有通常知識者可在不違背如後述 之申請專利範圍中所定義知本發明的範圍内作形式及細節 上的各種修改。 【圖式簡單說明】 藉由參照附加圖式來詳細說明例示實施例，本發明之 上述及其他特徵和優點將變得更加顯而易見，其中： 第1圖係為依據本發明之一實施例之使用量子點之光 源模組之平面視圖； 第2圖係為第1圖所示之光源模組之側面視圖； 第3圖係為第1圖所示之光源模組發出的光之波長帶 之光強度之顯示圖； 第4圖係為第1圖所示之光源模組發出的光之色度座 標區域之顯不圖， 第5圖係為依據本發明之另一實施例之使用量子點之 光源模組之平面視圖； 第6圖係為第5圖所示之光源模組之側面視圖； 第7圖係為依據本發明之另一實施例之使用量子點之 光源模組之平面視圖； 第8圖係為第7圖所示之光源模組之側面視圖； 第9圖係為依據本發明之另一實施例之使用量子點之 21 95230 201213701 光源模組之平面視圖； 第10圖係為第9圖所示之光源模組之側面視圖； 第11圖係為依據本發明之一實施例之背光單元之示 意圖； 第12圖係為依據本發明之一實施例之顯示設備之示 意圖； 第13圖係為依據本發明之一實施例之照明設備之示 意圖。 【主要元件符號說明】 100、200、300、400、510、610 光源模組 110、210、310、410 發光裝置封裝件 120、220、320 電路基板 130a、130b、230、331 發光裝置晶片 135 透射性樹脂封裝部分 150 、 515 量子點密封封裝件 151 量子點 155 密封構件 240 支撐構件 330 發光裝置晶片封裝件 335 、 420 模具構件 415 引線框架 430 發光裝置晶片 511 發光裝置封裝件 550 光導板 560 光學薄膜 570 影像面板 600 照明設備 650 電源供應單元 651 界面 655 電源控制單元 22 95230Internationale de l'Eclairage) CIE 1931 chromaticity coordinate system consists of four vertices (0·6000 '0. 4000), (〇. 7200, 〇·2800), (0. 6427, 0. 2905), and (0 . 6000, 〇. 4000) The area surrounding it. The blue LED wafer has a full width at half maximum of 10 to 30 nm, a first hazel point of 5 to 60 nm FWHM ' and a second quantum dot having a FWHM of 30 to 80 nm. The plurality of illuminator wafers are ultraviolet LED chips, and the quantum dots comprise a first quantum dot sized to allow a peak wavelength to be in the wavelength band of blue light; and a second quantum dot sized to allow a peak wavelength to be in the wavelength band of green light; And a first quantum dot whose size allows the peak wavelength to be in the wavelength band of red light. According to another aspect of the present invention, a backlight unit including a source module using a quantum dot is provided, the light source module includes: a light emitting device package, 3: a substrate and a plurality of light emitting devices mounted on the substrate The wafer; the quantum dot=sealing package' is placed on the light-emitting device package toward the light-emitting direction, the quantum==the package includes the (four) member and the quantum is adhered to the sealing member and the guide plate. Using the I; the other aspect of the present month, providing a display device, comprising a component, a gossip light source module, the light source module comprising: a light emitting device package quantum plate and a plurality of mounted on the substrate The light-emitting device wafer; the amount; the package member 'on the light-emitting device package in the light-emitting direction'. The component-tight member includes a sealing member and the quantum dot is used to display an image by the sealing plate and the image panel. The other aspect of the invention provides a lighting device, comprising: a module, the light source module comprising: a light emitting device package, 7 95230 201213701 comprising a substrate and a plurality of light emitting device chips mounted on the substrate; a quantum dot sealing package disposed on the light emitting device package in a light emitting direction, the quantum dot sealing package including a sealing member and the quantum dot sealed by the sealing member; and a power supply unit to supply power to the light source module . The power source can be prepared external to the lighting device, and the power supply unit can include an interface for receiving power; and a power control unit for controlling the power supplied to the light source module. In some cases, the power supply can be prepared in the lighting device. [Embodiment] Hereinafter, the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used to refer to the same elements, and for clarity, the size or thickness of the elements may be exaggerated. 1 is a plan view of a light source module 100 using quantum dots 151 in accordance with an embodiment of the present invention. Fig. 2 is a side elevational view of the light source module 100 shown in Fig. 1. Referring to FIGS. 1 and 2, the light source module 1 according to the present embodiment is a white light source, and includes a light emitting device package 110 including a plurality of light emitting device wafers 130a and 130b, and is placed in the light emitting device package toward the light emitting direction. The quantum dot on package 110 seals the package 150. In the light emitting device package 110, the light emitting device wafers 130a and 130b are directly mounted on the circuit substrate 120, such as a printed circuit board (PCB). The light emitting device wafers 130a and 130b may be gallium nitride (GaN) based light emitting diode (LED) wafers for emitting blue light. However, in some cases, the luminescent wafers 130a and 130b may be ultraviolet LED chips. 8 95230 201213701 or 'Lighting device wafers 130a and 130b may be organic light emitting diode (OLED) wafers or other known light emitting device wafers. A Zener diode wafer can also be mounted to protect the light emitting device wafers 130a and 130b. A plurality of light-emitting device wafers 130a and 130b may be wired using a flip chip bonding method or a wire bonding method. The light-emitting device wafers i3a and i3b can be covered and protected by the transmissive resin encapsulating portion 135. Although the light-emitting device wafers 130a and 130b are covered by the transmissive resin encapsulating portion 135 in a two-pair manner in Figs. 1 and 2, the embodiment is not limited thereto. For example, one, three, or more of the light-emitting device wafers 130a*l3b may be coated by each of the transmissive resin encapsulating portions 135. Alternatively, the transmissive resin encapsulating portion 135 may be omitted. Further, the light-emitting device wafers 130a and 130b are aligned in a row in the first and second figures, but the embodiment is not limited thereto. For example, the illuminator wafers 130a* 13〇b can be aligned in a plurality of columns' or can be aligned in a curved or predetermined pattern rather than a straight line. The illuminating device package 11A is an example of a chip on a circuit board (COB) type package. The quantum dot sealing package 15 is bonded in the light emitting direction and placed on the light emitting device package 110. The quantum dot sealing package 150 includes a sealing member 155 and a quantum dot ι 51 injected into the sealing member 155. The sealing member 155 protects the quantum point 151 from the external environment (e.g., oxygen or moisture) and may be a glass tube or a polymer tube formed of a transparent material. The sealing member 155 may be a tube having a linear shape, i.e., a strip tube, corresponding to the arrangement of the light-emitting device wafers 130a and 130b. If the illuminating device wafer 13〇8 and the i3〇b row 9 95230 201213701 are listed as curved or predetermined patterns ′, the sealing member 155 may be a correspondingly curved or patterned tube, or may be a flat tube covering the illuminating device wafer. The entire area in which 130a and 130b are arranged. The dice point 151 is a nanocrystal having a diameter of about 1 to 1 nanometer, and is a semiconductor material composition' and causes a quantum confinement effect. The quantum dot 151 converts the wavelength of light emitted from the light-emitting device wafers 130a and 130b and generates wavelength-converted light, i.e., fluorescent light. Examples of the quantum dot 151 include a nanocrystal based on cerium (Si), a compound semiconductor nanocrystal based on a group II-VI, a compound semiconductor nanocrystal based on the ιπ-ν group, and IV-νΐ Group-based compound semiconductor nanocrystals. According to the present embodiment, the quantum dots 151 may be one or a mixture of the above examples. In this case, from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe 'CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS 'CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS 'CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe may form a compound semiconductor nanocrystal based on the II-VI group. From GaN, GAP, GaAs, AIN, A1P, AlAs, InN 'InP, InAs, GaNP 'GaNAs, GaPAs, A1NP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GalnNP, GalnNAs, GalnPAs, InAlNP , InAlNAs and InAlPAs can form a compound semiconductor nanocrystal based on the III-V group. Form IV-VI based compounds such as SbTe 10 95230 201213701 Semiconductor nanocrystals. The quantum dot 151 is naturally coordinated and dispersed in a dispersion medium such as an organic solvent or a polymer resin and sealed by a sealing member 155. The transparent medium (10) which does not reflect the wavelength conversion efficiency of the sub-point 151 does not deteriorate due to light, and does not reflect light or absorb light. For example, the organic solvent may include at least one of toluene, chloroform, and ethanol, and the poly-resin may include at least epoxy, stellite, polyethylidene, and propionate (d); If a polymer resin is used as the polymer resin dispersed therein, the 151 knife is then cured at the sealing member 155'. The excited electrons are transmitted from the conduction band to the valence and have the characteristic that the set point 151 emits light when there is a headband even for the same material. Since the previous wavelength is changed according to the size of the material, the '+ scale phase change can be obtained by controlling the size of the quantum dot 151, so that the light of the wavelength region of the growth strip of the nanocrystal is appropriately changed. The quantum dots n can be controlled by inverse conditions, as described above, the size of each light-emitting device 曰. Color LED chip. In this case, = coffee and (10) can be blue light of 435 to 470 nm. At the same time, the _color (10) wafer can emit the dominant wavelength and the peak wavelength at the first point 151 of the wavelength band of the green light can include the second allowable point of the wavelength of the wavelength in the wavelength band of the red light, and the size allows the peak to The first and second quantities are controlled appropriately. In this case, the peak wavelength is 500 to 550 nm, and the size of the first quantum dot is 580 to 660 nm. The peak wavelength of the second quantum dot is simultaneous, producing denser light than typical phosphorus. Therefore, the sub-151 has a sub-point of 15 在 in a narrow wavelength band, and the first quantum dot may have a full width half (FWHM) of 95230 11 201213701 10 to 60 nm, and the second quantum dot has 3 to 80 Nano's FWHM. At the same time, use has! The blue LED chip of the FWM of the 〇 〇 作为 is used as the light-emitting device wafer l3〇a*13〇b. When quantum dots that emit light of different colors are mixed, if the color ratio of the quantum dots changes, the user can see light of different wavelengths. To prevent this problem, it is necessary to mix materials with precise density and precise ratio. When mixing quantum dots, quantum = emission efficiency must be considered in addition to density. In a typical w-light source using an array of LED enclosures where the quantum dots are mixed with grease, the density control, uniformity and system are limited, and the chromaticity coordinates of the package between these conditions may be In the deviation, when a plurality of illuminating devices of the original module 100 x package iio are placed on the slabs 130a and 13Gb for the illuminating dreams, the φ 曰 组 100 100 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰In the meantime, the entire light source is molded away from the light emitting device package and 'in the light source module (10), the package 150 (four) emits a 'chromaticity coordinate required for the quantum dot sealing prepared sideways. And the intensity can be easily obtained. Figure 3 is the light intensity of the long band in Figure 1.贞-No light source module just emitted light wave group 100 emits light: degree ^ ^ picture is the light source mode shown in Figure 1 and the light source module just = domain, diagram. The wavelength band is controlled to obtain the characteristics of the particle size of the example Dongzi Point 151, Table 1. 95230 12 201213701 [Table 1] Blue Green Red Wp (nm) 455 535 630 FWHM (nm) 20 30 54 In Table 1, Wp represents the dominant wavelength of each blue, green, and red light, and FWHM represents each blue light, The full width and width of green and red light are half-height. Referring to Table 1, blue light is emitted from the light-emitting device wafers 130a and 130b, and green light and red light are emitted from the quantum point 151, and blue light, green light, and red light have a distribution of light intensity as shown in Fig. 3. Moreover, the wavelength band can be controlled by controlling the particle size of the quantum dots 151, and the chromaticity coordinates can be controlled by controlling the density of the quantum dots 151 depending on the particle size. Therefore, as shown in Fig. 4, the particle size and density of the quantum dots 151 can be controlled such that the chromaticity coordinates of the green light of the first quantum dots are located at the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage) CIE 1931. The chromaticity coordinate system is surrounded by four vertices (0. 1270, 0. 8037), (〇. 4117, 0· 5861), (0. 4197, 0·5316), and (0.2555, 0.5030). And the chromaticity coordinate of the red light of the second quantum dot is four vertices in the CIE 1931 chromaticity coordinate system of the International Commission on Illumination (0·5448, 0.454), (0. 7200, 0.2800), (0.6427 , 0.2905), and (0.4794, 0.4633) surrounding area B. As shown in Figure 4, the light source module 1 with the above distribution of light 〇〇 C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C Or greater than 95% color reproducibility (c〇i〇r repr〇(jucti〇n), and has a very high intensity light emission of 13 95230 201213701. Furthermore, as described above, since quantum dot 151 is more typical of phosphorus The narrow wavelength band produces more dense light, so the first and second quantum dots may be in a narrower region of the chromaticity coordinates. That is, the chromaticity coordinate of the green light of the first quantum dot can be placed in the CIE The chromaticity of the red ray of the 1931 chromaticity coordinate system around the four vertices (0.1270, 0.8037), (0.3700, 0.6180), (0·3700, 0.5800) and (0.2500, 0.5500) and the second quantum dot The coordinates are centered around the four vertices (0. 6000, 0. 4000), (0. 7200, 0.2800) (0. 6427, 0· 2905), and (0.6000, 0.4000) of the CIE 1931 chromaticity coordinate system. B' further enhances color reproduction. As described above, the light source module 100 can be emitted from The combination of device wafers 130a and 130b achieves the highest color reproduction, and by defining the dominant wavelengths of illuminator wafers 130a and 130b and the chromaticity coordinates of the first and second quantum dots of the CIE 1931 chromaticity coordinate system, The first and second quantum dots are implemented to a certain range or region. In the light source module 100, the light-emitting device wafers 130a and 130b are blue LED chips and the quantum dots 151 are wavelength-converted into blue and green light. However, the present invention is not limited thereto. For example, the light-emitting device wafers 130a and 130b may be ultraviolet light LED chips and may control the particle size and density of the quantum dots 151 to include a size having a peak wavelength allowed in the wavelength band of blue light. a first quantum dot, a second quantum dot having a size allowing the peak wavelength to be within a wavelength band of green light, and a third quantum dot having a size allowing the peak wavelength to be within a wavelength band of red light. Next, the illuminating device wafers 130a and 130b, that is, the ultraviolet LED chip, 14 95230 201213701 is the only white light-emitting quantum dot sealing package. FIG. 5 is based on the present invention. (4) a plan view of the original light source module _. A side view of the module 200 using quantum dots. The light source shown in Fig. 5 refers to the fifth and sixth figures, and according to the embodiment, a plurality of light-emitting device chips are included. The illumination of the 23 毕 is completed, and includes the illuminating device package 2 X , the denture 210 , and the assembly ( 10 ) in the direction of light emission. The quantum dot sealing package 15 can be sealed to seal the quantum dot sealing package 150. A m-square example == group 200 and the light source module (10) of the previous embodiment =:: - package 15 〇 and illuminator package Μ. Yes Two ':: It is also said that 'in the light source module, the quantum dot sealed package cow 150 疋 directly joined to the light-emitting device package ιι〇. However, the package (10) is separated from the light emitting device package 21 by the additional branch member 24?. The quantum dot sealing package can also support the support member 240 in a detachable manner. In this case, the light source characteristics of the light source module 200 can be easily changed by replacing the quantum dot sealing package 15G having different characteristics of the color coordinates. At the same time, the light-emitting device package 21 () A (10) type package in which the hair, the skirts are as > {230 are aligned in a row and mounted directly on the circuit substrate', but is not limited thereto. Figure 7 is a plan view of a light source module 300 using quantum dots in accordance with another embodiment of the present invention. The 帛8 circle is a side view of the light source module 300 shown in Fig. 7. 95230 15 201213701 Referring to Figures 7 and 8, the light source module 300 according to the present embodiment is a light-emitting device package 310 including a plurality of light-emitting device wafers 331 and a quantum disposed on the light-emitting device package 310 toward the light-emitting direction. The point seals the package 150. The quantum dot sealing package 150 can be the same as the quantum dot sealing package 150 of the previous embodiment. The light source module 300 is different from the light source modules 1A and 2A of the previous embodiment in that the light emitting device chip package 330 is a circuit substrate 320, such as a PCB, bonded in the light emitting device package 310. That is, in the light source module 100, the light-emitting device chips 13a and i3b are directly mounted on the circuit substrate 120. However, in the light source module 3A, the light-emitting device wafer 331 is individually packaged into the light-emitting device chip package 330 by additionally using a mold member (m〇id meffl|3er) 335, and then the light-emitting device chip package 330 It is mounted on the circuit substrate 320. In the light-emitting device chip package 330, the grooves of the mold member 3 to which the light-emitting device wafer 331 is attached may form a reflection cavity to improve the directivity of the light emitted from the light-emitting device wafer 3 3 i. Although each of the light-emitting device chip packages 33A of FIGS. 7 and 8 is mounted with one light-emitting device wafer 331, two or more light-emitting device wafers 331 may be mounted or a Zener diode wafer may be mounted to protect the light-emitting. Device wafer 331. Further, although the quantum dot sealing package 1 of FIGS. 7 and 8 is bonded to the remaining (four) piece 31G, the quantum dot sealing package 15 is replaced by the additional supporting member 24G shown in FIG. Separated from the light emitting device package 310. Figure 9 is a plan view of a light source module 4GG using quantum dots in accordance with another embodiment of the present invention. The first QQ is the light source shown in Figure 9. 95230 16 201213701 Side view of the module 400. Referring to Figures 9 and 10, the light source module 4 according to the present embodiment is a light-emitting device package 410' including a plurality of light-emitting device wafers 430 and a quantum disposed on the light-emitting device package 41A in the light-emitting direction. The point seals the package 150. The quantum dot sealing package 15A can be identical to the quantum dot sealing package 150 of the previous embodiment. The xenon light source module 400 is different from the light source modules, 2A and 300 of the previous embodiment in that the light emitting device chip package 41 is a chip on lead frame (chipon lead-frame; c〇L) type package. . That is, although the light-emitting device package 11〇, 21〇, 31〇 of the previous embodiment is a COB-type package or the chip package is a package mounted on a circuit substrate, the dislocation package 410 is a hair-emitting package. The wavy package in which the wafers are electrically connected by the lead frames 4! 5 is practiced, and the light-emitting device wafer 43 and the lead frame 415 are packaged by using the mold member. In the light-emitting device package 4, the recess of the mold 420 for the wafer side of the light-emitting device can form a reflective cavity to improve the directivity of the light emitted from the light-emitting device wafer. Although the grooves of each of the mold members 42 of Figs. 9 and 1 are mounted as a light-emitting device wafer couch, two light-emitting devices 430 can be mounted. In addition, although the ninth and one (1) patterns are bonded to the illuminating device package (4), the quantum measuring member 150 is disposed, and the sealing member 150 can be cut by the cutting member in the sixth drawing. Separation. >, Zanyou device 95230 17 201213701 Fig. 11 is a view of a backlight unit according to an embodiment of the present invention. Without referring to Fig. 11, the backlight unit according to the present embodiment is an edge-type backlight unit including a light guide plate 55A and a light source module 51A disposed on one side of the light plate 550. In the light source module 51A, the 卞 point sealing package 515 is placed on the illuminating device package 5丨1 in the light emitting direction. According to the previous embodiment, the light source module 510 may be a light source module 10(10), 200 ' 300 and 400 any one. The light guide plate 550 is a member for guiding light and being transparent. A predetermined pattern of outwardly directed light may be formed on one of the two surfaces of the light guiding plate 550. The light source module 510 is placed on one side of the light guide plate 550. Because the light-emitting device chips in the light-emitting device package 511 of the light source module 510 can be arranged in a row and the quantum dot sealing package 515 can be the rod-shaped tube as described above in FIGS. 1 and 2, the quantum dot sealing package 515 is The light emitting surface can face the light guide plate 550 on the side. The light emitted from the light source module 510 passes through the light guide plate 550 on the side to enter the light guide plate 55, and is completely reflected and diffused to each place of the light guide plate 550. The light totally reflected in the light guiding plate 550 is emitted outward through the surface of the light guiding plate 550, and a predetermined pattern is formed on the surface (i.e., the light emitting surface) of the light guiding plate 550. Figure 12 is a view of a display device in accordance with an embodiment of the present invention. Referring to Fig. 12, the display device according to the present embodiment uses the backlight unit shown in Fig. 11, which includes a light source module 510, a light guide plate 550, an optical thin 貘 56 〇, and an image panel 57 。. The optical film 560 improves the directivity of the light irradiated toward the 95230 201213701 image panel 570 and is placed on one side of the light emitting surface of the light guide plate 55A. The optical film 56 can include, for example, a prism sheet or a diffusion plate. The image panel 570 is a device that converts an electrical image signal into an image, such as a liquid crystal display (LCD) panel. Light emitted from the light source module 510 passes through one side of the light guiding plate 550 and is emitted through the light emitting surface of the light guiding plate 550 as described above in the figure, and then passes through the optical film 56 to illuminate the rear surface of the image panel 570. As described above, by using a quantum dot sealing package, the light source module 510 can realize white light with greatly improved color reproduction, so that all of the light-emitting device wafers have uniform chromaticity coordinates, thereby greatly improving the color quality of the display device. In addition, since the quantum dots of the quantum dot sealing package are separated from the external environment by the sealing member, the quantum dots can be stably maintained, thereby greatly improving reliability. Figure 13 is a schematic illustration of a lighting device 6 in accordance with an embodiment of the present invention. Referring to Fig. 13, the illuminating device 6 依据 according to the present embodiment includes a light source module 610 and a power supply unit 65 5 that supplies the light source module 6 丨〇. According to a prior embodiment, the light source module can be any one of the light source modules 100' 200 ' 300 and 400. The power supply unit 65A may include an interface 651 for receiving power, and a power control unit 655 for controlling a power source to be supplied to the light source module 610. The interface 651 can include a fuse for blocking overcurrent, and an electromagnetic shielding filter for shielding electromagnetic interference signals. The power source can be provided from a device external to the illumination device 6 or a battery included in the illumination device 600. If an alternating current (AC) power source is supplied, the power control unit 655 may include a rectification 19 95230 201213701 unit ' for converting alternating current to direct current (DC) and for converting a direct current (DC) voltage into a suitable light source module 61. The constant pressure control unit of the ink. If the power source is a DC power source having a voltage suitable for the light source module 610 (e.g., a battery), the rectifier unit and the ten-voltage control unit may be omitted. In addition, if the device such as the AC-LED is used as the light-emitting device chip of the light source module 610, the AC power source can be directly supplied to the light source module 610, and in this case, the rectifying unit and the constant voltage control unit can also be used. Omitted. In addition, the power control unit 655 can control the color temperature to achieve lean-sensitive illumination. The illumination device 600 can be applied to a variety of splits using light sources. For example, as described above in Figures 1 and 2, the arrangement of the illuminator wafers and the shape of the quantum dot sealing package of the light source model ' 610 can be designed in a straight line, a curved line or a predetermined pattern. The illuminating device 600 can be a general illuminating device for an incandescent lamp or a fluorescent lamp for a strip, and in this case, typically obtained by controlling the particle size of the quantum dot sealing package of the light source module 610 Light emission quantum of a wavelength band in a wide area According to the above embodiment of the present invention, the following effects and spectra can be achieved. First, because the organic solvent or polymer dispersed by the quantum dots is used in the additional sealing member of the light source, it is possible to prevent the oxygen or moisture in the module from working stably in a hot and humid or hot environment. β Second, since the quantum dot sealing and sealing member is commonly used for the use of the light-emitting device wafer, it is possible to simplify the process, increase the number, and reduce the manufacturing cost. '; and thirdly, because the quantum dot sealing seals are commonly used to prepare the light-emitting device wafers', it is possible to suppress the color distribution of the wavelength-converted light caused by each of the light-emitting device wafers at the time of the preparation of the quantum dots. The deviation allows the entire illuminator wafer to have uniform chromaticity coordinates and greatly improve color reproduction. While the present invention has been shown and described with respect to the embodiments of the present invention, it will be understood by those of ordinary skill in the art Various modifications. BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the detailed description of the embodiments of the invention. A plan view of the light source module of the quantum dot; Fig. 2 is a side view of the light source module shown in Fig. 1; Fig. 3 is a light band of light emitted by the light source module shown in Fig. 1. The display of the intensity; the fourth figure is a display of the chromaticity coordinate area of the light emitted by the light source module shown in FIG. 1, and the fifth figure is the use of the quantum dot according to another embodiment of the present invention. a plan view of a light source module; FIG. 6 is a side view of the light source module shown in FIG. 5; and FIG. 7 is a plan view of a light source module using quantum dots according to another embodiment of the present invention; Figure 8 is a side view of the light source module shown in Figure 7; Figure 9 is a plan view of a light source module using a quantum dot 21 95230 201213701 according to another embodiment of the present invention; Side view of the light source module shown in Figure 9 11 is a schematic diagram of a backlight unit according to an embodiment of the present invention; FIG. 12 is a schematic diagram of a display device according to an embodiment of the present invention; and FIG. 13 is an illumination according to an embodiment of the present invention; Schematic diagram of the equipment. [Main component symbol description] 100, 200, 300, 400, 510, 610 light source module 110, 210, 310, 410 light emitting device package 120, 220, 320 circuit substrate 130a, 130b, 230, 331 light emitting device wafer 135 transmission Resin package portion 150, 515 quantum dot sealing package 151 quantum dot 155 sealing member 240 support member 330 light emitting device chip package 335, 420 mold member 415 lead frame 430 light emitting device wafer 511 light emitting device package 550 light guiding plate 560 optical film 570 Image Panel 600 Lighting 650 Power Supply Unit 651 Interface 655 Power Control Unit 22 95230