TW201216641A - A stretchable form of single crystal silicon for high performance electronics on rubber substrates - Google Patents

Abstract

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Description

201216641 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a single crystal stone in an extendable form of a high-performance electronic component for use on a rubber substrate. [Prior Art] Since the first demonstration of a fully polymerized transistor printed in 1994, there has been a tremendous rise in the potential for a new class of electronic systems that include a programmable integrated electronic device on a plastic substrate. helmet. [Gamier, F,

Hajlaoui, R., Yassar, A. ^ Srivastava, P., Science» ^265 Volume '1684·secret page> Recently, a large number of studies have been directed to the development of new conductors for flexible plastic electronic devices, dielectric f And a solution of the semiconductor component can process the material. However, 'the advancement in the field of flexible electronic devices is not only driven by the development of new solution-processable materials, but also by the geometry of the new device components, the high-position and device component processing methods, and the resolution that can be applied to plastic substrates. Driven by patterning technology. It is expected that these material device configurations and manufacturing methods will play a key role in the rapid emergence of new flexible integrated electronic devices, systems and circuits. Interest in the field of *T flexible I1 electronics is caused by several important advantages offered by this technology. First, the mechanical durability of the plastic substrate material provides an electronic device that is less susceptible to damage and/or less susceptible to degradation in electronic performance caused by mechanical stress. Second, the inherent flexibility of such substrate materials allows for their integration into many shapes, providing a large number of useful device configurations that are not available by conventional, sturdy electronic devices based on brittleness. Finally, the combination of solution-processable component materials and plastic substrates makes it possible to produce continuous, high-speed, printed technology at low cost on large substrate areas 159867.doc 201216641. However, 'good electronic performance' The design and manufacture of flexible electronic devices: 3⁄4 dry significant challenges. First, well-developed methods for fabricating conventional electronic devices based on Shi Xi are incompatible with most plastic materials. For example, 5, conventional high quality inorganic semiconductor components such as single crystal germanium or germanium semiconductors are typically processed by growing a film at certain temperatures (> degrees Celsius), which temperatures significantly exceed most plastics. The melting or decomposition temperature of the substrate is further large. The inorganic semiconductor is substantially insoluble in a suitable solvent that allows for solution-based processing and transport. Second, although many amorphous germanium, organic or hybrid organic-inorganic semiconductors are compatiblely incorporated into plastic substrates and can be processed at relatively low temperatures, such materials do not have the ability to provide products with good electronic performance. The electronic properties of bulk electronic devices. For example, a thin film transistor having a semiconductor component fabricated from such materials exhibits a field effect mobility that is about three orders of magnitude lower than a complementary single crystal germanium-based device. As a result of these limitations, it is flexible. Sexual electronic devices are currently limited to specific applications that do not require high performance, such as in switching elements for active matrix flat panel displays with non-emissive pixels and in light emitting diodes. Improvements have been made in expanding the electronic performance capabilities of integrated electronic devices on plastic substrates to extend their applicability to a wider range of electronic applications. By way of example, several new thin film transistor designs have emerged which are compatible with the processing on plastic substrate materials and which exhibit significantly higher and more amorphous thin film transistors with organic or inorganic organic-inorganic semiconductor components. Device performance characteristics. - a more efficient flexible electronic device based on 159867.doc 201216641 A polycrystalline film produced by pulsed laser annealing of an amorphous cut film, although such flexible electronic devices provide enhanced The device electronically functions, but the use of pulsed laser annealing limits the ease of manufacture and flexibility of such devices, which in turn adds significant cost. Another new: high-performance flexible electronic device is the use of solutions such as nanowires, naphthalene, nanoparticle and carbon nanotubes to process nanoscale materials as a number of macroelectronic and microelectronic devices. The use of discrete single crystal nanowires or nanobelts in active functional components has been evaluated as a possible means of providing printable electronic devices that exhibit enhanced device performance characteristics on plastic substrates. A plurality of thin film transistor designs for selectively oriented single crystal germanium or Cds nanobelts as semiconductor channels [Duan, X·, Niu, c, Sah丨, v, (5),], Μι 】, Empedocles , S. and Goldman, j,, vol. 425, pp. 278]. The authors report that a single crystal Monai wire or CdS nanobelt having a thickness of less than or equal to 15 nanometers in a manufacturing process that is said to be compatible with solution processing on a plastic substrate is dispersed in the solution, And it is assembled on the surface of the substrate using a flow direction alignment method to produce a semiconductor element of the thin film transistor. The optical micrographs provided by the authors suggest that the disclosed manufacturing process produces a single layer of multiple nanowires or nanoribbons in substantially parallel orientation and spaced from about nanometers to about nanometers. Although cough et al. reported a relatively high intrinsic field-effect mobility of (4) nanomaterials or nanobelts, 119 cm2 V1 s丨)) but the total device field-effect mobility has recently been judged; t is compared to Duan et al. The reported f field effect mobility value is small 159867.doc 201216641 "about two orders of magnitude". [Mitzi, D.B, Kosbar, L.L., Murray, C.E., Copel, M. Afzali, A., Nature» ^ 4281 > ^ 299-303 Page J. The field effect mobility of this device is several orders of magnitude lower than that of the conventional single crystal inorganic thin film transistor, and may be due to alignment, tight packaging, and electricity using the method and device configuration disclosed by Duan et al. Contact the actual challenges in discrete nanowires or nanobelts. The use of a nanocrystal solution as a precursor to a polycrystalline inorganic semiconductor film has also been explored as a means of providing a printable electronic device exhibiting higher device performance characteristics on a plastic substrate. The phantoms disclose a solution processing process in which a solution of a xenon crystal having a size of about 2 nanometers is treated at a plastic compatible temperature to provide a semiconductor element of a field effect transistor. [Ridley, BA, Nivi, B. and Jac〇bs〇n, ; M, Sconce, Vol. 286, 746-749 (1999)] The authors report a method in a cadmium selenide nanocrystal solution Low temperature grain growth provides a single crystal region containing hundreds of nanocrystals. Although Ridley et al. report improved electronic properties relative to comparison devices with organic semiconductor components, device mobility achieved by such techniques (i : 1 cm2 The field effect mobility of devices with conventional single crystal inorganic thin film transistors is several orders of magnitude lower. The field effect mobility limitations achieved by Ridley et al.'s device configuration and manufacturing methods may be determined by individual Produced by electrical contact between the rice particles. In detail, the use of organic end groups to stabilize the nanocrystal solution and prevent coagulation prevents the formation of good electrical contact between adjacent particles. Contact is necessary to provide high device field-effect mobility. 159867.doc 201216641 "Although D_ et al. and Ridley et al. provide methods for fabricating thin film electrical B-body on plastic substrates, the described description The configuration is a transistor containing mechanically rigid device components such as electrodes, semiconductors, and/or dielectrics. The use of a plastic substrate with good mechanical properties provides an electronic device that can be oriented in an extended or twisted orientation, however, this is expected Deformation can create mechanical stresses on individual rigid electrical device components. This mechanical stress can cause damage to individual components, such as 'cracks, and can also degrade or interrupt electrical contact between device components. In addition, by Duan Whether the electronic substrate based on plastic substrates developed by et al., Ri£Hey et al. and others provides the mechanical extensibility necessary for many important device applications, including flexible sensor arrays, electronic paper, and wearable electronic devices. It is not clear. Although these teams demonstrated electronic devices capable of withstanding the deformation caused by deflection, such plastic substrate-based systems are unlikely to undergo significant extension without significant damage, mechanical failure, or significant degradation of device efficiency. Therefore, such systems are unlikely to withstand deformation caused by expansion or compression, or to withstand an isomorphous coverage height. Deformation required for a surface of a volt (such as a curved surface having a large radius of curvature). As noted above, advances in the field of flexible electronic devices are expected to play a key role in several important new technologies and prior art. The success of such applications in flexible electronic mounting technology is highly dependent on new materials, configuration, and fabrication of integrated electronics that exhibit good electrical, mechanical, and optical properties in flexure, deformation, and bending configurations. The continued development of commercially viable manufacturing circuits for circuits and devices. In particular, high-performance, mechanically extensible materials that exhibit unusable electrical and mechanical properties in extended or collapsed configurations 159867.doc 201216641 and device groups SUMMARY OF THE INVENTION The present invention provides extendable semiconductors and extendable electronic devices, device components, and circuits. As used herein, the term "extensible" means that materials, structures, devices, and device components are capable of withstanding strain without cracking or mechanical failure. The extendable semiconductor and electronic devices of the present invention are extensible and, therefore, extend and/or compress at least to some extent without damage, mechanical failure, or significant degradation in device performance. The extensible semiconductor and electronic circuits of the present invention, which are preferred for certain applications, are flexible (except for being extensible) and are therefore capable of significantly elongating, flexing, bending or performing along one or more axes Other variants. Useful extendable semiconductor and electronic devices of the present invention are capable of elongating, compressing, twisting, and/or expanding without mechanical failure. In addition, the extendable semiconductor and electronic circuits of the present invention exhibit good electronic efficacy even when subjected to significant strain (e.g., greater than or equal to a force of 0.5/, preferably 1% and preferably 2% strain). Flexible extensible semiconductor and electronic devices, device components, and circuits also exhibit good electrical performance when in a flexed, bent, and/or deformed state. Because the extendable semiconductor component and the extendable electronic device of the present invention, and the device and the circuit provide useful electronic properties and mechanical durability in flexing, extending, compressing or deforming, it is suitable for a wide range of applications. Device application and device configuration. The extendable and/or flexible semiconductor may also (as appropriate) be printable (four) 'and brother's) may comprise a composite semiconductor component having a operative interface with other structures, materials and/or device components (such as dielectric A semiconductor structure in which materials and electrodes and other semiconductor materials and layers are connected. The present invention includes a wide range of extensible and/or flexible electronic and/or optoelectronic devices having extendable and/or flexible semiconductors including, but not limited to, transistors, diodes, illumination Diodes (LEDs), organic light-emitting diodes (OLEDs), lasers, microelectromechanical devices and nanomechanical devices, microfluidic devices and nanofluid devices, memory devices, and system-level integrated electronic circuits ( Such as complementary logic circuits). In one aspect, the present invention provides an extensible semiconductor component that provides useful functional properties when in a flexed, expanded, compressed, bent, and/or deformed state. As used herein, the expression "semiconductor element" and ", semiconductor structure" are used equally herein and generally refer to any semiconductor material, composition or structure, and particularly include high quality single crystal and polycrystalline semiconductor, via high temperature. Processing of fabricated semiconductor materials, doped semiconductor materials, organic and inorganic semiconductors, and composite semiconductors having one or more additional semiconductor components and/or non-semiconductor components such as dielectric layers or materials and/or conductive layers or materials Materials and structures. The extendable half-f body # of the present invention comprises a flexible substrate having a surface selected and a curved inner surface (for example, a curved line provided by a curved configuration of the semiconductor structure) Semiconductor structure of the inner surface. In this embodiment, at least a portion of the curved inner surface of the semiconductor structure is bonded to the surface of the support of the susceptor substrate. An exemplary semiconductor structure having a curved inner surface useful in the present invention comprises Curved structure. In this paper, "bending structure" refers to a structure having a curved configuration caused by the applied force The curved structure in the present invention may have - or a plurality of folded regions, & regions and/or recessed regions. For example, the curved structure useful in the present invention may have a crimped configuration, a wrinkle, 159,867.doc n 201216641 a pleat configuration, a wavy configuration, and/or a wavy (ie, waveform) configuration to provide a beta winter structure (such as an extensible curved semiconductor structure having a curved inner surface and an electronic circuit) compatible with, for example, a polymer The flexible substrate of the flexible substrate is bonded in a configuration in which the curved structure is strained. In some embodiments, the curved structure (such as a curved ribbon structure) is subjected to strains equal to or less than about 30 / β. In embodiments that are preferred for certain applications, etc.: or J is at a strain of about 10/., and/or is preferably used in certain applications: the column is subjected to equal to or less than about 1%. Strain. In certain embodiments, the curved structure (such as an f-bend ribbon structure) is subjected to a strain selected from the range of from about 1% to about 3% by weight. In a useful embodiment, 'having a curved inner surface The semiconductor structure includes - at least partially A transferable semiconductor substrate in which a flexible substrate is bonded, in which a transferable semiconductor component can be transferred from a donor surface, for example, via: a technical brush technique, a patterning technique, and/or other material transfer methods. Semiconductor structures to a receptor surface. Useful transferable semiconductor components, composites, and devices useful in the methods include, but are not limited to, printable semiconductor components. Suitable flexible substrates include, but are not limited to, polymer substrates, Plastic substrate and/or elastic substrate. By way of example, in one embodiment, the invention comprises a transferable, and (in viewable) printable semiconductor component that is transferred and bonded to a pre-strained elastic substrate. Useful transfer methods in this aspect of the invention include printing techniques such as contact printing or solution printing. The elastic substrate is then subsequently produced on the transferable and (as appropriate) printable semiconductor element 159867.doc 201216641. Strain, resulting in the formation of the inner surface of the curve (e.g., via bending and/or distortion of the semiconductor component). In some embodiments, a semiconductor component having a curved inner surface is fabricated (eg, as described above) and subsequently transferred from a flexible substrate used to create its curved surface to a different flexible substrate and is otherwise flexible The substrate is bonded. Useful embodiments of this aspect of the invention include a transferable and (as appropriate) printable semiconductor structure comprising curved semiconductor strips, wires, strips, discs, plates, cubes, columns or columns having curved inner surfaces The cylinder has a corrugated, ribbed and/or wavy configuration on the inner surface. However, the invention includes an extendable semiconductor wherein the semiconductor component is not provided to the flexible substrate via a printing member and/or wherein the semiconductor component is unprintable. The present invention includes extendable semiconductors comprising a single semiconductor component having a curved inner surface supported by a single flexible substrate. Alternatively, the extendable semiconductor of the present invention comprises a plurality of extensible semiconductor elements having curved inner surfaces supported by a single flexible substrate. Embodiments of the invention include an array or pattern of extensible semiconductor elements. The extensible semiconductor elements have curved inner surfaces supported by a single-flex substrate. Optionally, the extensible semiconductor component in the array or pattern has a well defined, pre-selected physical size, location, and relative spatial orientation. The present invention also includes an extendable electronic device, a set of components and/or circuitry comprising - or a plurality of extensible semiconductor structures, and additional integrated device components such as electrical contacts, electrodes, conductive layers, dielectric layers and / or additional half 159867.doc 201216641 conductor layer (for example, doped layer, PN junction, etc.). In this embodiment, the extendable semiconductor structure and the additional integrated device components are operatively coupled to provide selected device functionality and are electrically or insulative to each other. In certain useful embodiments, at least a portion or all of the additional integrated device components (and the extendable semiconductor) have curved inner surfaces that are surfaced by a flexible substrate The bucks are provided and are provided in a curved structure, such as a curved structure having a curl, a wave shape, a warped edge, and/or a wrinkle configuration. The inner surface of the additional integrated device assembly and the extendable semiconductor may have substantially the same or different contour shapes. The present invention includes embodiments in which the extendable device components are interconnected via metal interconnects that exhibit substantial extensibility or metal interconnects that also have corrugations, wrinkles, bends, and/or ribs. The curved inner surface configuration of the additional integrated device assembly is provided in certain embodiments by a generally curved configuration of electronic devices such as crimp, wave, rib, and/or wrinkle configurations. In such embodiments, the curved structure enables such devices to exhibit good electrical performance even when subjected to significant strain, such as maintaining electrical or insulating properties with a semiconductor component when in an extended, compressed, and/or curved configuration. . The extendable electronic circuitry can be fabricated using techniques similar to those described herein for fabricating extensible semiconductor components. For example, in one embodiment, an extendable device component including an extendable semiconductor component is fabricated separately and then interconnected, or a device comprising a semiconductor can be fabricated in a flat configuration and subsequently processed into a resulting planar device To provide a generally curved device structure having curved inner surfaces of some or all of the device components. 159867.doc 12 201216641 The present invention includes extendable electronic devices including a single electronic device having a curved inner surface supported by a single flexible substrate. Or the invention includes an array of extendable electronic devices comprising a plurality of extendable electronic devices or device components, each having a curved inner surface supported by a single flexible substrate. Alternatively, the array of devices of the present invention can have well-defined, pre-selected physical dimensions, locations, and relative spatial orientations. In some embodiments of the invention, the inner surface of the curved surface of the semiconductor structure or electronic device is provided by a curved structure. The curved structure and curved inner surface of the semiconductor and/or electronic device of the present invention may have any contour shape that provides extensibility and/or flexibility, including but not limited to, at least one raised region, at least one recessed The region or at least one raised region is combined with one of the at least one recessed region as a characteristic contour shape. The contour shape useful in the present invention includes a contour shape that varies in one or two spatial dimensions. : Using a curved structure having an inner surface that exhibits periodic or aperiodic contour shapes in multiple spatial dimensions helps to provide extension, compression, and deflection in multiple directions including orthogonal directions Or other variants of extendable semiconductors and/or electronic devices. Useful embodiments include a curved inner surface provided by a curved semiconductor structure and/or an electronic device. The semiconductor structure and/or electronic device has a configuration including a plurality of raised and recessed regions, for example, in a waveform configuration. An alternating pattern of raised and recessed areas. In an embodiment, the extendable and/or flexible semiconductor component or the electrical cross-section component has a large-line inner surface 'or (as characterized by a substantially periodic waveform or a substantially non-159867.doc 201216641 periodic waveform) Contour shape, in this paper, the periodic waveform can contain any two-dimensional or two-dimensional dimensional waveform, including (but not limited to) one or more sine wave square waves, Anes function, Gaussian waveform, Lorientzian a waveform, or a combination of such waveforms. In another embodiment, the curved inner surface of the semiconductor or electronic device, or (as appropriate) the entire cross-sectional assembly has a plurality of non-periodic warping edges having a large amplitude and width. Contour shape. In another embodiment, the curved inner surface of the semiconductor or electronic device, or (as appropriate) the entire cross-sectional assembly has a contour shape consisting of a periodic waveform and a plurality of non-periodic warps. In an embodiment, The extendable semiconductor component or electronic device of the present invention comprises a curved structure, such as a portion having a length along its length and (as appropriate) A curved ribbon structure of a one-cycle or non-periodic waveform configuration. For example, the present invention includes a curved structure comprising a period between about 1 micrometer and 1 micrometer and an amplitude of about 5 〇. A curved ribbon-like structure of a sinusoidal configuration between nanometers and about 5 microns. The curved structure may be provided in other periodic waveform configurations, such as square and/or Gaussian waveforms extending along at least a portion of the length and/or width of such structures. An extendable and flexible semiconductor component and an extendable electronic device comprising a curved ribbon structure are expandable along an axis extending along a length of the semiconductor strip, such as an axis extending along a first waveform of the inner surface of the curve, Compressed, bent, and/or deformed, and (as appropriate) may expand, compress, bend, and/or deform along one or more other axes, such as an axis extending along the curved structures and other directions of the inner surface of the curved surface. In certain embodiments, the configuration of the semiconductor structure and electrons of this aspect of the invention may vary when subjected to mechanical stress or when a force is applied. For example, the period and/or amplitude of a curved semiconductor structure and electronic device having a wavy or warped configuration may be varied in response to applied mechanical stress and/or force. In some embodiments, this modified configuration Capabilities provide the ability to extend semiconductor structures and electronic circuits for expansion, compression, flexing, deformation, and/or bending without significant mechanical damage, cracking, or substantial degradation in electronic properties and/or performance of the electronic device. The inner surface of the curve of the extendable electronic device can be continuously bonded to the support surface (ie, bonded at substantially all points (eg, about 90%) along the inner surface of the curve). Alternatively, the semiconductor structure and/or The curved inner surface of the extendable electronic device can be intermittently coupled to the support surface, wherein the inner surface of the meandering curve is joined to the support surface at selected points along the inner surface of the curve. The invention includes an embodiment wherein a curved inner surface of the semiconductor structure or electronic device is bonded to the flexible substrate at discrete points, and between discrete bonding points between the inner surface and the flexible substrate The inner surface has a curved configuration. The invention includes a curved semiconductor having an inner surface. And an electronic device, the inner surface being bonded to the flexible substrate at discrete points wherein the discrete bonding points are isolated from each other by a raised edge region that is not directly bonded to the flexible substrate. In some flexible semiconductors and/or flexible electronic devices of the present invention, only the inner surface of the semiconductor structure or electronic device is provided in a curved configuration (4). Or 'the invention includes an extendable semiconductor provided in a curved configuration of ... and an extendable electronic device' wherein the entire cross-sectional component of the curved semiconductor structure or electronic device is provided in a curved configuration, such as a wave, wrinkles, light Core 159867.doc 201216641 In these embodiments, the curve configuration extends through the half one. The entire thickness of at least a portion of the electronic device. For example, the extensible semiconductor of the present invention comprises a curved conductor strip or strip having a waveform, a sensitive, a ribbed and/or a curled configuration. The invention also includes a composition device, wherein the entire semiconductor structure or electronic device, or at least a majority of the semiconductor structure or electronic device is provided in a curved configuration, such as a wavy, wrinkled or curved configuration. These waveforms, (4) and/or extendable configurations provide a means of adjusting the suitability of the properties of the compositions, materials and devices of the present invention. For example, the mobility of a semiconductor and the nature of its contacts depend, at least in part, on strain. The spatially varying strain in the present invention helps to adjust the material and device properties in a beneficial manner. As another example, the spatially varying strain in the waveguide causes spatially varying refractive index properties (via bounce effect)' which may also be advantageously used for different types of grating couplers. The bond between the inner surface of the extendable semiconductor structure and/or electronic device and the outer surface of the flexible substrate can be provided using any composition, structure or bonding mechanism that provides a mechanically useful structure that is mechanically useful The system shall be capable of withstanding extension and/or compression displacement without mechanical failure or significant degradation of electronic properties and/or performance and (as appropriate) flexing displacement without mechanical failure or significant degradation of electronic properties and/or performance. . The useful combination of the semiconductor structure and/or electronic device with the flexible substrate provides a mechanically robust structure that exhibits beneficial electronic properties when subjected to a variety of extension, compression, and/or flexing configurations or deformations. In one embodiment of this aspect of the invention, at least a portion of the inner surface of the semiconductor structure and/or electronic device is bonded to the outer surface of the flexible 159867.doc • 16-201216641 substrate. The semiconductor structure or electronic device and the flexible substrate < Covalent and/or non-covalent bonding between the outer surfaces is provided. Such structural towels have a pattern of sexual bonding including the use of the van der Waals interaction, dipole-dipole interaction and/or hydrogen bonding between the semiconductor structure or electronic device and the outer surface of the slidable substrate. Knot interaction. The invention also includes embodiments in which bonding is provided by a bond or layer, coating or film between the semiconductor structure or electronic device and the outer surface of the flexible substrate. Useful adhesive layers include, but are not limited to, metal layer poly S layers, partially polymerized polymer precursor layers, and composite layers. The invention also includes the use of a leutable substrate having a chemically modified outer surface to facilitate, for example, a flexible substrate (such as a polymer substrate) and a semiconductor having a plurality of hydroxyl groups disposed on an outer surface thereof. A combination of components or electronic devices. The present invention includes flexible semiconductors and electronic circuits in which the semiconductor structure or electronic circuit is wholly or partially encapsulated in an encapsulating layer or coating such as a polymeric layer. The physical dimensions and compositions of the semiconductor structure or electronic device at least partially affect the overall mechanical and electronic properties of the extensible semiconductor component of the present invention. As used herein, the term "thin" refers to a structure having a thickness of less than or equal to about 100 microns, and for some applications preferably less than or equal to about 50 microseconds. The use of thin semiconductor structures or electronic devices such as thin semiconductor strips, small plates and strip or thin film transistors is important in certain embodiments to facilitate the formation of curved inner surfaces such as waveforms, curls or curved inner surfaces: Thereby providing a configuration that can be extended, shrunk and/or flexed without damage, mechanical failure or significant degradation of electronic properties. The use of thin semiconductor structures and electronic devices such as thin printable half 159867.doc -17-201216641 conductor structures is particularly useful for extensible semiconductors and extendable electronic devices comprising brittle semiconductor materials such as single crystal and/or polycrystalline inorganic semiconductors . In a useful embodiment, the semiconductor, 纟 构 or electronic circuit has a width selected over a range of from about 1 micrometer to about 1 centimeter and a thickness selected from the range of from about 50 nanometers to about 50 micrometers. The composition and physical dimensions of the support flexible substrate can also at least partially illuminate the overall mechanical properties of the extendable semiconductor component and the extendable electronic device of the present invention. Useful flexible substrates include, but are not limited to, flexible substrates having a thickness selected from the range of from about 0.1 mm to about 1 μm. In a useful embodiment, the flexible substrate comprises a poly(dimethyloxane) pdms layer' and has a thickness selected from the range of from about 毫米 mm to about 1 mm. The invention also includes partially processed extendable semiconductor components or partially processed extendable semiconductor circuits. For example, in one embodiment, the invention includes a Si ribbon having a ρη diode device thereon. The Si strips provided in a waveform configuration are optionally provided on a PDMS substrate. Interconnects are provided between the (insulating) diodes such that the diode output (e.g., photocurrent) can be amplified', e.g., via metal smelting using a shadow mask. In one embodiment, a plurality of individual extensible electro-optics are fabricated on the elastomer. Individual transistors are wired in some manner (e.g., by shadow mask evaporation) to make other useful circuits, such as circuits composed of a number of transistors connected in a particular manner. For these conditions, the interconnecting wires are also extendable so that we have a fully extendable circuit on the elastomer. In another aspect, the invention provides a method of fabricating an extensible semiconductor element 159867.doc -18-201216641 comprising the steps of: (1) providing a transferable semiconductor structure having an inner surface, (2) providing a pre-strained elastic substrate in an expanded state, wherein the elastic substrate has an outer surface; (3) at least a portion of an inner surface of the transferable semiconductor structure is bonded to an outer surface of the pre-strained elastic substrate in an expanded state; and (4) The elastic substrate is allowed to at least partially relax to a relaxed state, wherein the relaxation of the elastic substrate bends the inner surface of the transferable semiconductor structure, thereby producing an extendable semiconductor component having a curved inner surface. In some embodiments of this aspect of the invention, the pre-strained resilient substrate expands along the first axis and optionally expands along a second axis that is orthogonally positioned relative to the first axis. In a useful embodiment, the transferable semiconductor component provided to the pre-strained substrate is a printable semiconductor component. In another aspect, the invention provides a method for fabricating an extendable electronic circuit comprising the steps of: (1) providing a transferable electronic circuit having an inner surface; (2) providing a pre-expansion state a strained elastic substrate, wherein the elastic substrate has an outer surface; (3) bonding at least a portion of an inner surface of the transferable electronic circuit to an outer surface of the pre-strained elastic substrate in an expanded state; and (4) allowing the elastic substrate At least partially relaxed to a relaxed state that causes the elastic substrate to relax causing the inner surface of the electronic circuit to bend, thereby creating the extendable electronic circuit. In a useful embodiment, the transferable electronic circuit provided to the pre-strained flexible substrate is a printable electronic circuit, such as an electronic circuit that can be transferred via a printing technique, such as a dry transfer contact print. In some embodiments, an electronic circuit includes a plurality of integrated device components, including but not limited to: one or more semiconductor components (such as transferable and (as appropriate) printable semiconductor components), dielectric 159867 .doc 201216641 Elements, electrodes, conductive elements comprising superconducting elements, and doped semiconductor elements 0 Optionally, the method of this aspect of the invention may further comprise extending the extensible semiconductor or the extensible from the substrate elastic substrate The step of transferring the electronic circuit to a receiving substrate 'receives at least partially retains the curved inner surface and/or curved structure of the semiconductor component or electronic circuit. The semiconductor structure or electronic circuit is transferred to a receiving substrate, such as a polymer receiving substrate, or a receiving substrate comprising paper, metal or semiconductor. In this embodiment, the transferred extendable semiconductor or extendable electronic device can be combined with the receiving substrate (such as a flexible, polymer receiving substrate) via a wide range of means including, but not limited to, Use of adhesive and/or laminate layers, films and/or coatings, such as adhesive layers (such as polyimide layers or transferable extensible semiconductors or extendable electronics via transferable extensible semiconductors) Alternatively, hydrogen bonding, covalent bonding, dipole-dipole interaction, and valence interaction between the extendable electronic device and the receiving substrate are combined with a receiving substrate such as a flexible, polymer receiving substrate. In an embodiment, the structure is transferred to a curved semiconductor structure and/or an electronic circuit having a waveform, a warp, a wrinkle or a crimped configuration supported by an elastic substrate. On the other side of the substrate. For example, in the case of -3⁄41 J, , , and , in the case of an elastomer substrate, a corrugated photovoltaic device is prepared, and Rand (man) (for example) uses poly Amine as a glue layer It is transferred to the metal crucible. In the wing apricot you > 4 a * ^ ^ ^ these first hit the device with the underlying metal foil (which can be charged ▲ one of the collectors, such as 囍. wrong by patterning 'etching Electrical connections are made between the fabrication of through holes to expose 159867.doc -20· 201216641 exposed metal surfaces, metal deposits, etc. The wavy surface of the photovoltaic device of this configuration can be utilized to enhance light capture (or reduce) Light reflection. For example, in order to obtain better anti-reflection results, a step-wise treatment can be performed on the wavy surface, such as making the surface roughness much smaller than the wavelength of the wavy semiconductor. In short, the portion can be Or all processed wavy/bent semiconductor/circuits are transferred to other substrates (not limited to pdms), and if necessary, additional processing can be obtained by adding further processing. Alternatively, the method of the present invention can be Further comprising the step of encapsulating, covering or laminating the extendable semiconductor or extendable electronic device. In this context, the encapsulation in the case of a layered rib structure includes wherein the encapsulation material is provided to the ridges Under the raised area Fully embedded in the geometry and configuration of all sides of the rib structure. The encapsulation also includes providing an encapsulation layer, such as a polymer layer, on top of the raised and unembossed features of the curved semiconductor structure or electronic circuit. In one embodiment, a prepolymer such as a PDMS prepolymer is cast and cured onto the extensible semiconductor or extendable electronic device. For certain applications, the 'encapsulation or coating process steps help to enhance the invention. Extendable mechanical stability and robustness of semiconductors and electronic devices. The present invention includes encapsulation, coverage, and/or lamination that exhibits good mechanical and electrical performance when in extended, compressed, bent, and/or flexed configurations. Extending semiconductor and electronic devices. Optionally, the method of this aspect of the invention includes assembling a semiconductor on a donor substrate such as a polymer substrate (eg, a 2D ultra-thin polymer substrate) or an inorganic substrate (eg, Si〇2). Steps of components, device components, and/or functional devices. In this embodiment, the structure assembled on the donor substrate is then transferred to 159867.doc •21-201216641 Elastomeric substrate to form an extensible material, device or device assembly. In one embodiment, a transistor, an array of transistors, or an electronic device having a transistor is first assembled on a donor substrate, such as via the use of a printable semiconductor component. Printing Technology. Next, the entire device and/or array of devices is transferred to a pre-strained elastic substrate (e.g., by contact printing) to form an extendable waveform and/or warp rib system. It is advantageous to fabricate device interconnects and fabricate actual size circuits on a thin, non-elastomeric material (like polythenimine or benzoquinone cyclobutene or PET, etc.) prior to transfer to the extensible elastomeric support. This method is useful. In such systems, a non-periodic 2D waveform or warped edge structure will be obtained in a combined transistor/polymer film/elastomer substrate system. The method of pre-straining an elastic substrate useful in the method includes bending, crimping, flexing, and expanding the elastic substrate before and/or during contact and bonding with the semiconductor structure and/or the electronic device (eg, by Use a mechanical platform). One method of pre-straining an elastic substrate in a plurality of directions is particularly useful for thermally expanding the elastic substrate by increasing the temperature of the elastic substrate before and/or during contact with and bonding with the semiconductor structure and/or electronic device. In such embodiments, the relaxation of the elastic substrate is achieved by lowering the temperature of the flexible substrate after contact and/or bonding with the transferable and (as appropriate) printable semiconductor component or electronic device. In some methods, the elastic substrate is pre-strained by introducing a strain of from about 1% to about 30%. As used herein, the expression "elastic substrate" refers to a substrate that can be extended or deformed and can be returned to its original shape without substantial permanent deformation. The elastic substrate is generally subjected to a substantially elastic deformation of 159867.doc -22· 201216641. The exemplary elastic substrates useful in the present X month include, but are not limited to, elastomers and composites or mixtures of polymers and copolymers exhibiting elasticity. In the simplistic method, the elastic substrate is pre-strained via a mechanism that provides the elastic substrate along one or more spindles. For example, the pre-deformation can be provided by expanding the elastic substrate along the 篦_^ axis. However, the present invention also includes a method of expanding the elastic substrate by a plurality of axes of '/σ, for example, by expanding the first and second axes positioned opposite each other along the opposite side. The means for pre-straining the elastic substrate by means of a mechanism for providing expansion of the elastic substrate comprises bending, crimping, flexing, leveling, expanding or otherwise smearing the substrate (4). The present invention purely (4) provides a means for pre-straining by raising the temperature of the elastic substrate and then transporting it to provide thermal expansion of the elastic substrate. The method of the present invention is also capable of fabricating extensible elements, devices and device components from materials of the same semiconductor material. The present invention includes a method of transferring and bonding a non-semiconductor structure such as an insulator, a superconductor', and a semimetal to a pre-strained elastic substrate. Allowing the elastic substrate to at least partially loosen it results in an extensible non-semiconductor structure having a curved inner surface (eg, Formation of a non-semiconductor structure having a shape of a wave and/or a beveled profile. This aspect of the invention includes an extendable non-semiconductor structure having a curved configuration, such as a crimped configuration, a pleated configuration, an interesting configuration, and/or an inner surface provided in a wave configuration and Case) External Surface β Having a Flexible Substrate for use in the extensible semiconductor, electronic device and/or device assembly of the present invention includes, but is not limited to, a polymer substrate and/or a plastic substrate. The extensible semiconductor comprises a composition comprising one or more transferable, (as appropriate) 129867.doc 23-201216641 printed semiconductor structures, such as printable semiconductor components, which are pre-strained during fabrication. Supported to create the inner surface of the semiconductor curve. Alternatively, the extendable semiconductor comprises a composition comprising one or more transferable semiconductor structures, such as a printable semiconductor component, supported by a flexible substrate different from the elastic substrate pre-strained during fabrication to produce a k-semiconductor curve The inner surface. For example, the invention includes a semiconductor structure having a curved inner surface in an extensible semiconductor that is transferred from the flexible substrate to a different flexible substrate. [Embodiment] Referring to the drawings, like reference numerals indicate like elements and the In addition, in the following, the following definitions apply: "printable" relates to materials that can be transferred, assembled, patterned, organized, and/or integrated onto or into a substrate 'structure, device components, and/or integrated functional devices. In one embodiment of the invention, printable materials, components, device components and devices can be transferred, assembled, patterned, organized and/or integrated onto or into a substrate via solution printing or dry transfer contact printing. The "printable semiconductor component" of the present invention comprises a semiconductor structure that can be assembled (eg, using dry transfer contact printing and/or solution printing methods) and/or integrated onto the surface of the substrate. In one embodiment, the printable of the present invention The semiconductor component is a monocrystalline single crystal, polycrystalline or microcrystalline inorganic semiconductor structure. Herein, the monolithic structure is a monolithic member having mechanically connected features. The semiconductor component of the present invention may be undoped. Hetero- or doped, may have a spatial distribution of dopant choices, and may include a plurality of different dopant materials doped with p and N-type doping 159867.doc • 24-201216641. The present invention includes: At least one microstructure-printable semiconductor component having a cross-sectional dimension greater than or equal to about 1 micron, and at least one nanostructure printable semiconductor component having a cross-sectional dimension of less than or equal to about 10,000 microns. Printable semiconductors useful in many applications include For top-down, high-purity bulk materials, such as high-purity crystalline semiconductor wafers produced using conventional high-temperature processing techniques, Processing elements of the acquisition. In one embodiment, the printable semiconductor component of the present invention comprises a composite structure that has operatively coupled to at least one additional device component or structure (such as a conductive layer, a dielectric layer, an electrode), an additional semiconductor structure, or the like. Any combination of semiconductors. In one embodiment, the printable semiconductor component of the present invention comprises an extendable semiconductor component and/or a hetero semiconductor component. The π section size " refers to the size of the section of the device, device component or material. The cross-sectional dimensions include width, thickness, radius, and diameter. For example, a semiconductor component having a strip shape is characterized by a length and two cross-sectional dimensions: thickness and width. For example, a printable semiconductor component having a cylindrical shape is characterized by a length and a cross-sectional dimension: diameter (or radius). "supported by a substrate" means a structure that exists at least partially on a substrate surface or at least partially on - or a plurality of intermediate structures between the structure and the substrate surface. The term " is a substrate, and may also refer to a structure in which part or all of the substrate is embedded. "Solution printing" is used to refer to a process such as a printable semiconductor component or a plurality of structures that are dispersed into a carrier medium and transported to a selected area of the substrate 2 in a coordinated manner. In an exemplary solution printing In the method, the structure 159867.doc -25 - 201216641 is transferred to the selected area of the substrate surface by a method independent of the morphology and/or physical properties of the surface of the substrate subjected to patterning. It can be used in the present invention. Solution printing methods include, but are not limited to, ink printing, thermal transfer printing, and capillary printing. "Generally longitudinal orientation" means that the direction of the longitudinal axis of a component group such as a printable semiconductor component is substantially The orientation in which the alignment axes are parallel is selected. In the context of this definition, the orientation with the selected axis is substantially parallel, indicating an orientation within a range of deviation from the absolute parallel direction, preferably within 5 degrees of the absolute parallel direction. Orientation "extensible" refers to the ability of a material, structure, device, or device component to withstand strain without cracking. In an exemplary embodiment, an extendable The material, structure, device or device assembly can withstand strains greater than about 〇.5% without cracking, and for some applications it is preferred to withstand strains greater than about 1% without cracking f and, for some applications, preferably withstand greater than About 3% strain without cracking. The term "flexibility•, and "flexible" is used equally herein and refers to the deformation of a material, structure, device, or device component into a curved shape without being subjected to Introducing the ability of significant strain transformations, such as strains that characterize the point of failure of a material, structure, device, or device component. In an exemplary embodiment, the flexible material, structure, device, or device component can Deformed into a curved shape without introducing a strain greater than or equal to about 5%, for which a strain greater than or equal to about 1% is preferably not introduced, and for some applications it is preferred not to introduce a strain greater than or equal to about 0.5%. The term "warping" refers to a response when a thin element, structure, and/or device is bent by a direction outside the plane of the element, structure, and/or device. 159867.doc -26- 201216641 Solid deformation occurring upon strain. The invention includes extendable semiconductors, devices and assemblies having one or more surfaces having a contour shape comprising one or more ridges. "Semiconductor" A material that is an insulator at low temperatures but has a significant electrical conductivity at about 300 absolute temperatures. In this context, the use of the term semiconductor is intended to be consistent with the use of this term in the art of microelectronics and electronic devices. Semiconductors suitable for use in the present invention may comprise elemental semiconductors such as ruthenium, iridium and diamond, and composite semiconductors such as Group IV composite semiconductors (such as Sic and SiGe), Group III-V semiconductors (such as AlSb, AlAs, Ain, A1P). , BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP), Group III-V ternary semiconductor alloys (such as AlxGai-xAs), Group II-VI semiconductors (such as CsSe, CdS, CdTe, ZnO, ZnSe, ZnS, and ZnTe), Group I-VII semiconductor CuCl, Group IV-VI semiconductors (such as PbS, PbTe, and SnS), layer semiconductors (such as Pbl2, MoS2, and GaSe), oxide semiconductors (such as CuO) And Cu20). The term semiconductor includes exogenous semiconductors and intrinsic semiconductors (including semiconductors having a P-type dopant material and an n-type dopant material) doped with one or more selected materials to provide advantageous electronic properties suitable for a given application or device. The term semiconductor includes composite materials comprising a mixture of semiconductors and/or dopants. Specific semiconductor materials suitable for use in certain applications of the invention include, but are not limited to, Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AllnP, 159867.doc •27· 201216641

GaAsP, GaInAs, GaInp, A1GaAsSb, AiGainp and

GalnAsP. The sigma semiconductor material is suitable for use in the field of the present invention in the field of sensors and luminescent materials such as light-emitting diodes (LEDs) and solid-state lasers. The impurity of the semiconductor material is different from the semiconductor material itself or any atom, element, ion and/or molecule provided to the dopant of the semiconductor material. Impurities are undesirable materials present in semiconductor materials that can negatively affect the electronic properties of the semiconductor material, and include, but are not limited to, oxygen, carbon, and metals including heavy metals. Heavy metal impurities include, but are not limited to, the family of elements, turns, and nanos, and all their ions, complexes, and/or complexes between the copper and the periodic table. "Plastic" means any synthetic or naturally occurring material or combination of materials that is typically molded or shaped and hardened to the desired shape when heated. Exemplary plastics suitable for use in the devices and methods of the present invention include, but are not limited to, polymers, resins, and cellulose. As used herein, the term plasticity is used to include composite plastic materials comprising - or a plurality of additives - or a plurality of plastics - such additives may be such as structural enhancers, fillers, fibers, plasticizers, elixirs or may be provided Additives of desired chemical or physical properties. , """Dielectric materials" are used equivalently herein, and refer to materials that are electrically resistant. Suitable dielectric materials include, but are not limited to, s1〇2, Ta2〇5, Ti〇2, Zr〇2, Y2〇3, siN4, sTOBsT, PLZT, PMN, and PZT. "Polymer" refers to a molecule comprising a plurality of repeating chemical groups commonly referred to as monomers. Polymers are generally characterized by high molecular weight. The polymer usable in the present invention may be an organic polymer or an inorganic polymer, and may be in an amorphous state, 159867.doc • 28-201216641 semi-amorphous germanium, crystal or partially crystalline state. The polymer may comprise monomers having the same chemical composition or may comprise a plurality of monomers (such as copolymers) having different chemical compositions. Crosslinked polymers having a chained monomeric chain are especially useful in certain applications of the invention. Polymers useful in the methods, devices, and device components of the present invention include, but are not limited to, plastics, elastomers, thermoplastic elastomers, elastomers, elastomers, thermostats, thermoplastics, and acrylates. Exemplary polymers include, but are not limited to, acetal polymers, biodegradable polymers, cellulosic polymers, fluoropolymers, nylon, polyacrylonitrile polymers, polyamidoximine polymers, Polyimine, polyarylate, polybenzimidazole, polybutene, polycarbonate, polyester, polyetherimide, polyethylene bake, polyethylene copolymer and modified polyethylidene, polyketone , poly(decyl methacrylate), polymethylpentene, polyphenylene ether and polyphenylene sulfide, polyphthalamide, polypropylene, polyurethane, styrene resin, hard resin, Ethylene-based resin or any combination thereof. "Elastomer" refers to a polymeric material that can be stretched or deformed and returned to its original shape without substantial permanent deformation. Elastomers are typically subjected to substantial elastic deformation. The elastic substrate suitable for use in the present invention at least partially comprises one or more elastomers. Exemplary elastomers suitable for use in the present invention may comprise a polymer, a copolymer, a composite or a mixture of a polymer and a copolymer. The elastomer layer refers to a layer comprising at least one elastomer. The elastomer layer may also include dopants and other non-elastomeric materials. Elastomers suitable for use in the present invention may include, but are not limited to, thermoplastic elastomers, styrenic materials, olefin materials, polyolefins, polyurethane thermoplastic elastomers, polyamines, synthetic rubbers, pDMs, polybutenes. Diene, polyisobutylene, poly(styrene-butadiene-styrene), polyamine 159867.doc •29- 201216641 Formate, polybutadiene and polyfluorene. "Good electronic performance" and "high performance" are used equally herein, and means that the device and device components have such desirable functions as electronic signal switching and/or amplification, such as field effect mobility, threshold voltage. And the electronic characteristics of the on-off ratio. Exemplary transferable, and optionally printable, semiconductor devices of the present invention that exhibit good electronic performance can have an intrinsic field effect mobility greater than or equal to 1 〇〇 cm s, preferably greater than or equal to about some applications. The intrinsic field effect mobility of 300 cm2. Exemplary transistor exhibiting good electronic performance of the present invention can have a device field effect mobility greater than or equal to about 100 cm V s, and for some applications preferably a device field effect mobility greater than or equal to about 300 cm 2 Vi si And for some applications it is preferred to have a device field effect mobility greater than or equal to about 8 〇〇 cm 2 V-, one. An exemplary transistor of the present invention that exhibits good electronic performance can have a threshold voltage of less than about 5 volts and/or greater than about 1><1<4> open & close ratio 0 "large area" An area of about 36 square feet, such as the area of a receiving surface of a substrate for device fabrication. "Device field effect mobility" refers to the field effect mobility of an electronic device such as a transistor calculated using output current data corresponding to an electronic device. A mechanical property of a material, device, or layer that refers to the ratio of stress to strain of a final material. The Young's modulus can be given by the following statement: > strain (ΔΙ (II) 159867 .doc -30- 201216641 Ε% modulus, L〇 balance length, the length of the strain applied under the applied stress, the force applied by the F system and the area where the force applied by the A system. The Young's modulus can also pass The following equation is expressed according to the Lamef number: μ(3λ + 2μ) (III) λ + μ where λ and μ are Lame constants. High Young's modulus (or "high modulus") and low Young's modulus (or "Low modulus" is a relative depiction of the magnitude of Young's modulus in a given material, layer or device. In the present invention, the high Young's modulus is larger than the low Young's modulus, for some applications Preferably, about Da Cong, preferably about 100 times larger for other applications, and preferably about 1000 times for other applications. In the following, a number of specific details of the device, device components and methods of the present invention are illustrated. To provide a detailed description of the precise nature of the invention. However, for familiarizing the art It will be apparent that the invention may be practiced without such specific details. The present invention provides an extendable semiconductor and electronic circuit that provides good performance when extended, compressed, flexed, or otherwise deformed. The extended semiconductor and electronic circuitry can be adapted for a wide range of device configurations to provide fully flexible electronic and optoelectronic devices. Figure 1 provides an atomic force micrograph showing the extensible semiconductor structure of the present invention. Element 700 includes a flexible substrate 705 (such as a polymer and/or an elastic substrate) having a support surface 710 and a curved semiconductor structure 715 having a curved inner surface 720. In this embodiment, the curved semiconductor structure 715 At least a portion of the curved inner surface 72〇 is coupled to the support surface 71〇 of the flexible 159867.doc •31·201216641 substrate 705. The curved inner surface may be at a selected point along the inner surface 720 or along the inner surface. The exemplary semiconductor structure illustrated in generally all of the points in combination with the support surface 7H) comprises one having a ratio equal to about 100 micrometers. The width and - equal to about 100 nm in the single-crystal silicon with a thickness of the curved β I-based description of a flexible substrate having a thickness approximately the PDMS i millimeters. Curved inner surface 720 has a curved structure that extends the length of the package 3 / port 5 - the substantially periodic waveform. As shown in Figure 1, the amplitude of the wave is about 5 (10) nm and the pitch is about 2 微米 microns. Figure 2 shows a atomic force micrograph of an expanded view of a semiconductor structure 715 having a curved inner surface 72G. Figure 3 shows an atomic force micrograph of an array of extensible semiconductor structures of the present invention. The analysis of the atomic force micrograph in Fig. 3 shows that the #f curved semiconductor structure is reduced by about 〇 as shown in Fig. 4. The outline of the inner surface 720 of the optical microscopy curve of the extendable semiconductor structure of the present invention allows the semiconductor structure to be bent. 715 expands along the deformation axis 730 without undergoing substantial mechanical strain. This wheel shape also allows the semiconductor structure to be bent, flexed or deformed in a direction different from the direction of the deformation axis 73 without significant mechanical damage or loss of performance due to strain. The curved surface of the semiconductor structure of the present invention can be provided with good mechanical properties such as extensibility, flexibility and/or flexibility and/or good electronic performance such as when deflected, extended or deformed. Good field effect mobility) of any contour shape. An exemplary contour shape may have the following features: a plurality of protrusions and/or concave waves, a Gaussian wave, an Aries function, a square wave, an in-region 'and having a sinusoidal wavelet, a periodic wave, a weekless 159867.doc 32· 201216641 Period wave or multiple waveforms of any combination of these waves. Waveforms suitable for use in the present invention may vary with respect to two or three physical dimensions. Figure 5 shows an atomic force micrograph of the extensible semiconductor structure of the present invention, the semiconductor structure 715 of the structure being bonded to a redistributable substrate 7?5 having a three-dimensional relief pattern on the support surface 710 of the substrate on. The two-dimensional undulating pattern includes a concave region 75G and an undulating feature 76 〇β as shown in Fig. 5. The semiconductor structure 715 is bonded to the support surface 71 in the recessed region 750 and the undulating feature 760. Figure 6 is a flow chart showing an exemplary method of fabricating an extendable semiconductor structure of the present invention. In this exemplary method, a pre-strained elastic substrate in an expanded state is provided. Pre-straining can be achieved by any method known in the art including, but not limited to, light pressing and/or pre-bending the elastomeric substrate. The pre-strain can also be achieved via a thermal process, such as by thermal expansion caused by raising the temperature of the elastomeric substrate. The pre-strain-advantage via thermal method can achieve expansion along a plurality of different axes, such as orthogonal axes. An exemplary elastomeric substrate system useful in this method of the invention is a s-substrate having a thickness equal to about 1 mm. The elastic substrate can be pre-strained by expansion along a single-axis or by expansion along a plurality of axes. As shown in Fig. 4, at least a part of the inner surface of the non-printable semiconductor is bonded to the outer surface of the pre-strained elastic substrate in an expanded state. Bonding can be achieved by covalent bonding between the inner surfaces of the surface of the semiconductor, by van der Waals force, by the use of a binder, or by any means such as this. In an exemplary implementation of the elastic substrate system 8, the support surface 159S67.doc-33-201216641 of the pDMs substrate is chemically modified such that it has a plurality of hydroxyl groups extending from its surface to promote coexistence with a semiconductor structure. Price bond. Referring again to Figure 6, after the pre-strained elastic substrate is bonded to the semiconductor structure, the elastic substrate is allowed to at least partially relax to a relaxed state. In this embodiment, the elastic substrate loosens the inner surface of the semiconductor structure, thereby producing a semiconductor component having a curved inner surface. As shown in FIG. 6, the manufacturing method may optionally include a second transfer step and optionally a bonding step, wherein the transferable semiconductor device 715 having a curved inner surface 72A is transferred from the elastic substrate to another substrate. Preferably, a flexible substrate such as a polymer substrate is used. This second transfer step can be performed by having the exposed surface of the semiconductor structure 715 having a curved inner surface 720

Adhesive layer, coating, coating and/or film between. The extensible semiconductor component of the present invention can effectively integrate devices and device components, such as transistors, diodes, and a large number of functionalities.

The body is less affected by the deflection, bending and: 'green' and thus the structural damage caused by the conventional rigid inorganic semi-guidance and / or t-shaped 159867.doc • 34 - 201216641 ringing its people, because f The curved semiconductor structure can be in a slightly mechanically strained state to provide a curved inner surface, so the extendable semiconductor component of the present invention can exhibit higher intrinsic field effect mobility than conventional unstrained rigid semiconductors. Finally, because the extensible semiconductor component is free to expand and contract during device temperature cycling, it may provide good thermal properties. Figure 7 shows an image of an array of vertically aligned extensible semiconductors having no wavy configuration. As shown in Figure 7, the semiconductor strips are provided in a periodic wave configuration and supported by a single flexible rubber substrate. Figure 8 shows a side view image of a 彳 extension + conductor element of the present invention in which a semiconductor structure 776 is supported by the flexible substrate 777. As shown in the figure, the semiconductor structure 776 has an inner surface, and the inner mask of the chord has a contour shape of a periodic wave. As also shown in Figure 8, the periodic wave configuration extends through the entire cross-sectional dimension of the semiconductor structure 776. The present invention also provides an array of extendable electronic circuits, devices and devices that have good performance when extended, flexed or deformed. Similar to the above extensible semiconductor component, the present invention provides an extendable circuit and an electronic device, #includes a flexible substrate having a support surface, and the support surface has a curved inner surface (such as a display-wave structure) The device of the surface), the array of devices, and the circuit are in contact. In this structural arrangement, the device, device array or circuit, . At least a portion of the curved inner surface is bonded to the support surface of the flexible substrate. A device, device array or circuit of this aspect of the invention. A plurality of multi-component components such as a semiconductor device, a dielectric, an electrode, a doped semiconductor, and a conductor assembly. In an exemplary embodiment, a flexible circuit, device, and device array having a net thickness of less than about 10 microns 159867.doc • 35-201216641 column includes a plurality of integrated device components, at least a portion of which has a periodic wave curve structure . In a useful embodiment of the invention, a stand-alone electronic circuit or device comprising a plurality of interconnect components is provided. The inner surface of one of the electronic circuits or devices is in contact with and at least partially bonded to a pre-strained resilient substrate in an expanded state. The pre-strain can be formed by any method known in the art including, but not limited to, rolling and/or pre-bending the elastic substrate, and by expanding along a single axis or by plural Expansion of the shaft to pre-strain the elastic substrate "combination may be achieved directly by covalent bonds or van der Waals I between the inner surface of at least a portion of the electronic circuit or device and the pre-strained elastic substrate, or by use An adhesive or an intermediate bonding layer is achieved. After bonding the pre-strained elastic substrate to the electronic circuit or device, the resilient substrate is allowed to at least partially loosen to a loose state which bends the inner surface of the semiconductor structure. The curved inner surface of the electronic circuit or device, in some useful embodiments, has a two-in-one periodic wave configuration. The present invention includes a plurality of embodiments in which all components including electronic devices or circuits are present in a "period or no cycle" set of states. — :: 2: Cycles or non-periodic groups of circuits, devices, and device arrays that follow an extended or f-curved configuration without creating large strains on those circuits or devices. This aspect of the invention provides useful electronic properties of an extendable electronic circuit, device, and array of devices when in a curved, early, orthopedic, extended, or deformed state. The period of the periodic wave configuration of the method-jr ^ m wind can be changed according to the following: (1) the net thickness of the set of integrated components including the electric device and the (8) integrated device 07 Materials such as Young's modulus and 159867.doc -36· 201216641 Mechanical properties of flexural rigidity. Figure 9A shows a flow chart illustrating an exemplary method of fabricating an array of extensible thin film transistors. As shown in Figure 9A, an array of freely printable thin dielectric transistors is provided using the techniques of the present invention. The array of thin film transistors is transferred to the -PDMS substrate via a dry transfer contact printing process by exposing the inner surfaces of the transistors. The exposed inner surface is then contacted with a room temperature cured pre-strained PDMS layer in an expanded state. The pre-strain? Subsequent complete curing of the top layer bonds the inner surface of the etc. to the pre-strained ruthenium (10) layer. The pre-strained PDMS layer is allowed to cool and exhibit an at least partially relaxed state. Relaxation of the PDMS layer introduces a periodic wave structure into the transistor in the array, thereby making it extendable. The inset in Figure 9A provides an atomic force micrograph of an extensible thin film transistor array fabricated by the method. The atomic force micrograph shows a periodic wave structure that provides good electronic performance in an extended or deformed state. Figure 9B provides an optical micrograph of an extensible thin film transistor array in a relaxed and extended configuration. To produce about 2 在 on the array. /. The net strain extends the array in a manner that does not rupture or damage the thin film transistors. It is observed that the conversion from a relaxed configuration to a strain configuration is a reversible process. Figure 93 also provides a diagram of the drain current versus gate voltage for a number of potentials applied to the gate, which demonstrates that these extensible thin film transistors exhibit good performance in both relaxed and extended configurations. Example 1: A single crystal of an extensible form of high performance electronic components for use on a rubber substrate has been fabricated from a 159867.doc •37-201216641 micron single crystal element configured to have a microscale periodic wavy geometry. Extendable form of 矽. When supported by an elastomeric substrate, this "wavy" can reversibly extend and compress to large strain without damaging the flaw. The amplitude and period of the waves are varied to accommodate these deformations, thereby avoiding significant strain on the raft itself. The dielectric, dopant pattern, electrode and other components directly integrated with germanium produce fully formed, high-efficiency "wave metal oxide semiconductor field effect transistors, pn diodes and other devices. An electronic circuit that can be extended or compressed to a similar strain level. Advances in electronics have been driven by efforts to increase circuit operation speed and bulk density, to reduce power consumption, and (for display systems) to enable large-area coverage. Recently, one has sought to develop methods and materials for forming high-performance circuits on non-conventional substrates having unusual physical dimensions. Flexible plastic substrates for paper displays and optical scanners, spherical curved support for focal plane arrays And conformal skin of the integrated robot sensor. Many electronic materials provide good flexibility when prepared in film form and placed on a thin substrate sheet or near a neutral mechanical plane in a substrate laminate. In these states, the strains experienced by the active materials during bending can remain below the typical level (about 1%) required to initiate the fracture. It is a more challenging requirement for devices that can flex, extend or reach extreme bending levels when operating, or for devices that are coated with supports with complex 'curve shapes, requiring full extensibility Characteristics of sex. In such systems, the strain at the circuit level can exceed the cracking limit of almost all known electronic materials, especially for the well-developed electronic materials used in existing applications. To some extent, this problem can be avoided by using an extendable wire to interconnect the circuitry of an electronic component (such as an electro-optic) supported by a rigid island (is〇Iated island). This strategy can be used to obtain valuable results, although it is best suited for applications that can be achieved with relatively low coverage active electronic components. We report - different methods, the extensibility of the crucible is directly achieved with a high quality single crystal film with a micron-period, "wave" geometry. These structures are based on changes in wave amplitude and wavelength rather than through Potential destructive strains in the material itself to accommodate large compression and tensile strains. Integration of these extendable 'wavy' elements with dielectric, dopant patterns and thin metal films can lead to high performance An extendable electronic device. Figure 10 shows a manufacturing sequence of a wavy single crystal ribbon on an elastomer (ie rubber) substrate. The first step (top frame) involves sputum (SC) I on an insulator. Photolithography defining a resist layer on the wafer, followed by a residue to remove the exposed portion of the top germanium. The resist is removed with acetone and then embedded in a concentrated argon fluoride acid The 〇2 layer releases the strips from the underlying germanium substrate. The ends of the strips are attached to the wafer to prevent it from being washed away in the etchant. The width of the lines (5-50 μm) and length (about 15 mm) defines the dimensions of the strips. The top of the SOI wafer is thick Degrees (20-320 nm) define the strip thickness. In the next step (middle box), a flat elastomeric substrate (poly(dimercaptodecane), PDMS; 1-3 mm thick) is elastically extended and It is then brought into contact with the strips. The stripping of the PDMS causes the strips to leave the wafer and bond the strips to the surface of the PDMS. Release of the strain in the PDMS (ie pre-strain) results in Surface deformations that form well-defined corrugations on the surface of the PDMS and the surface of the PDMS (Figs. 11A and 11B). The contours of the relief contours are between 5 and 50 μηη and the amplitudes are between 1 〇〇 nm and 1·5 μηι ( The sinusoid of the thickness of the 159 159867.doc -39- 201216641 and the pre-strain in the PDMS (top box, Figure 11C). For a given system, the period and amplitude of the waves are large ( The smoothness of the pe>ms between the bands and the absence of correlation in the waveforms of the adjacent bands indicate that the bands are not strongly mechanically coupled. Figure 11C (bottom frame) ) showing the micro-Raman of the Si spike measured as a function of the distance along one of the undulating bands The results provide insight into the stress distribution. The nature of this static wavy configuration is nonlinear with the initial warp geometry in a uniform, thin, high modulus layer on a half-infinitely low modulus support. Consistent analysis: λ πίι

JL φ = 0.52 ^ * , , , LESi (l-VpDMS) _ is the critical strain of the ridge, ερ; · β system pre-deformation level, λ 〇 wavelength and &amp; amplitude. The cypress ratio v, the Young's modulus E, and the subscripts refer to the properties of Si4PDMS. The thickness of 矽 is h. Here are a number of features that are fabricated into wavy structures. For example, Figure 11D shows that when the pre-strain value is fixed (about this data, the wavelength and the amplitude are linearly dependent on the thickness of the Si. The wavelength does not depend on the level of the pre-strain (Figure I2). In addition, calculations using the literature values of mechanical properties of SaPDMS (ESl 130 Gpa, EPDMS = 2 MPa, vsi = 0.27, vPDMS = 0.48) yield amplitudes and wavelengths in the range of about 1% (maximum deviation) of the measured values. &quot;带胄” is calculated from the ratio of the effective length of the bands (determined by the skin length) to the actual I59867.doc 201216641 length (determined by the surface distance measured by AFM) and produces approximately equal to the PDMS The value of the pre-strain (for pre-strain up to about 35%). The strain peak in the 矽 itself (meaning the maximum value) (I call it the 矽 strain) is the thickness of the belt and the strain zone according to κΑ/2 ( The radius of curvature of the κ-based curvature at the extremes of the waves is estimated such that the equi-waves exist in the strain zones and the critical strain (about 3% for the case here) is related to the bending The strain peak is smaller than the "for the data of the map, these The strain peak is about 0.36 (0.08)%, which is more than twice the strain of the strip. This strain is the same for all strips under pre-stressing (Figure 13). The resulting mechanical advantage (where the peak of the strain) Significantly smaller than the strain) is critical to achieving extensible hygiene. We have observed that warped films have also been observed in steamed or spin-coated metals and dielectrics (with preforms as described herein, The transferred single crystal element and device are contrasted.) The dynamic response of the wavy structure to the compressive and tensile strain applied to the elastomeric substrate is most important to the extendable electronic device after fabrication. To reveal the mechanism of the process, When the force is applied to the PDMSw to compress or extend 1 &gt; 1) 1^3 in a direction parallel to the long dimension of the bands, we measure the geometry of the wavy Si band by AFM. This force produces strain along the zones and perpendicular thereto. These vertical strains primarily cause deformation of the PDMS in the region between the zones. On the other hand, the strain along the zones is the wave Adaptation of the structure to adapt The three-dimensional height image and surface profile in Figure 14A exhibit representative compression, unstressed, and extended states (collected from slightly different locations on the sample). In these and other cases, the bands remain during deformation. Its sinusoidal shape (159867.doc • 41 · 201216641 line in the box to the right of Figure 14A), where approximately half of the wave structure is located below the unstressed position of the PDMS surface as defined by the area between the bands (Figure 15) Figure i4b shows the wavelength and amplitude of the strain applied without compression (negative) and tensile (positive) with respect to the unstressed state (zero). These data correspond to a large amount from each point (&gt;5) 〇) The average AFM measurement results with collection. The applied strain is determined by the dimensional change between the ends of the 叩(10) substrate. The direct surface measurement by AFM along with the surrounding integral estimated from the sinusoidal waveforms shows that the applied strain is equal to the strain of the condition examined here (Figure 16). (Small amplitude (&lt;5 nm) waves that persist at tensile strain greater than the pre-strain minus 13⁄4 critical strain can result from a slight slip of si during the initial (four) process. j This small (or zero) The calculated strain peaks and band strains in the amplitude region are lower than the continuous values.) Interestingly, these results indicate that the undulations have two different physical responses to the applied strain. When in a state of tension, the waves evolve in a non-intuitive manner: the wavelength does not change significantly with the applied strain, and thus the mechanism behind the warping. Instead, the change in amplitude adapts to the strain. In this state, the enthalpy strain becomes smaller as the PDMS is extended; it reaches ~〇% when the applied strain is equal to the pre--. Conversely, at the time of M contraction, the wavelengths decrease and the amplitude increases as the strain applied. This mechanical response is related to the mechanical response of the accordion bellows (10), which is essentially different from the characteristic when tightened. 'Attributable to the reduction in the radius of curvature at the peaks and troughs' 11 strain increases with the applied strain increase. However, the increase rate and size of Shi Xi's strain are much lower than the strain, as shown in Fig. 14B. This mechanism makes extensibility possible. With the wavy geometry, the complete response in the strain range can be obtained by giving the wavelength λ to the value of 159867.doc -42· 201216641 in the initial interesting state, and the dependence of the applied strain heart. The equation is qualitatively described: λ = for stretching for compression (2) For example, 'this tension/compression asymmetry can be generated by a slight reversible interval between the PDMS and the rising region of Si formed during compression, for In this case 'along with systems that do not exhibit this asymmetrical nature, the wave amplitude A of the tension and compression is given by a single statement that is valid for moderate strain (<(7) - 丨 5%):

(3) where is the value corresponding to the initial state of interest. As shown in Figure 4A, these statements are obtained consistent with the number of experiments without any parameter fit. When the undulation of the tensile/compressive strain is maintained, the 矽 strain peak is controlled by the bending condition and given by (33) peak

(4) It is in good agreement with the strain measured by the curvature in Fig. 14B. (See also Figure 18). This analytical statement helps define the range of strains that the system can withstand without breaking the raft. For a pre-strain of 9%.9%, if the loss effect is assumed to be about 2% (for compression or stretching), the range is _27% t〇 2·9❶/. . Controlling the level of pre-strain allows this strain range (meaning 30% pick-up) to balance the desired degree of compression and tensile deformation. For example, a 3.5% pre-strain (the maximum value checked) yields a 24% box 159867.doc -43- 201216641. We have noticed that these calculations assume that the strain applied even at extreme deformation levels is equal to the strain. Experimentally, we have found that the results are usually attributed to the ability to adapt the strain outside the ends of the bands and the bands so that the applied strain is not completely transferred to the PDMS of the bands. exceed. We have established additional functionality by using conventional processing techniques to define the pattern of dopants in the crucible, thin metal contacts, and dielectric layers by starting with additional steps in the fabrication sequence (Fig. 〇, top box). Extension device. The two and three terminal devices, the diodes, and the transistors fabricated in this manner provide the basic building blocks of the circuits having advanced functionality, respectively. The dual transfer process in which the integrated tape device is first removed from the SOI onto an undeformed PDMS board and then to a pre-strained PDMS substrate establishes a wavy device having exposed metal contacts for detection. 17A and 17B show optical images and electrical responses of an extendable pn junction diode for strain applied to various levels of PDMS. We have found no systematic changes in the spread of data in the electrical properties of devices with extension or compression. The deviation in these curves is mainly due to the change in the quality of the probe contacts. These pn junction diodes can be used as a photodetector (in an opposite bias state) or as a photovoltaic device in addition to being a conventional rectifying device. The photocurrent density is about 3 5 mA/cm 2 at a reverse bias of about _ 丨 V. In the forward bias, the short circuit current density and the open circuit voltage are about 17 mA/cm2 and 0.2 V, respectively, which produces a 填充3 filling factor. The shape of the response is consistent with the modeling (solid line in Figure 17B). The device properties did not change significantly even after about 100 compression, extension and release cycles (Figure 19). Figure 17C shows the current-voltage characteristics of an extendable, wavy Schottky barrier metal 159867.doc • 44· 201216641 oxide semiconductor field effect transistor (M〇SFET), which is used with pn The procedure of the polar body is similar to the procedure and is formed by an integrated thin layer (4 〇 nm) of thermal Si 〇 2 as the gate dielectric (33). The device parameters taken from the electrical measurement of this wavy transistor (linear range mobility of approximately 100 cm2/Vs (possibly limited to contacts), threshold voltage approx. _3 v) can be used with the same processing conditions at sOI The device parameters of the devices formed on the wafer are compared. (Figures 20 and 21). As in pn diodes, such wavy electromorphs can reversibly extend and compress to large strain levels without damaging the devices or significantly altering electrical properties. In the diode and the transistor, the deformation of the PDMS other than the end of the devices causes strain (device) strain that is less than the applied change. The overall extensibility results from the combination of device extensibility and the pdms deformation of these types. At compressive strains greater than the compressive strain examined here, PDMS tends to bend in a manner that makes detection difficult. At greater tensile strains, depending on the thickness of the crucible, the length of the strip, and the strength of the bond between the crucible and the PDMS, the strips are broken, or slipped and remain intact. These extendable MOSFETs and pn diodes represent only two of the many types of &quot;wave&quot; electronic devices that can be formed. The complete circuit sheet or web can also be structured into a uniaxial or biaxial extendable wavy geometry. In addition to the unique mechanical properties of the wavy device, the coupling of strain and electronic properties that can occur in many semiconductors also provides for the design of device structures that utilize mechanically adjustable, periodic variations in strain to achieve an unusual electronic response. opportunity. Materials and Methods 159867.doc •45· 201216641 Sample preparation: Si on a Si substrate (Soitec) at Si〇2 (thickness of 145 nm, 145 nm, 200 nm, 400 nm, 400 nm or 1 μm) An insulator-on-insulator (SOI) wafer consisting of 20, 50, 100, 205, 290 or 320 nm thickness. In one case, we used an SOI wafer of Si (thickness of about 2.5 μm) and Si〇2 (thickness of about 1.5 μm) on Si (Shin-Etsu). In all cases, the top Si layer doped with boron (p-type) or phosphorous (n-type) has a resistivity between 5 and 20 Qcm. The top Si of these SOI wafers is patterned with a photoresist (AZ 5214 photoresist, Karl Suss MJB-3 contact mask aligner) and reactive ion etching (RIE) to define the Si band (5 to 50) Μιη width, 15 mm long) (PIasma Therm RIE, SF6 40 sccm, 50 mTorr, 100 W). The 8 丨〇 2 layer is removed by undercut etching in HF (49°/〇), which depends mainly on the width of the Si band. The lateral surname rate is typically 2 to 3 μπι/min. Preparation of poly(dimethyloxane) by mixing the substrate with a curing agent in a weight ratio of 1 〇: 1 and curing at 70 ° C for 2 hours or at room temperature for > 12 hours (PDMS) ) Elastomer (Sylgard 184, Dow Corning) Plate 0 These PDMS plates (1 to 3 mm thickness) are conformally contacted with Si on the etched SOI wafer to create the undulating structure. Any method of establishing controlled expansion of the PDMS prior to this contact, followed by shrinkage after removal from the wafer, can be used. We check three different technologies. In the first technique, the pre-strain is established for mechanical rolling of the PDMS after contacting the SOI substrate. Although the wavy structure can be formed in this manner', it tends to have a non-uniform wave period and amplitude. In the second technique, the PDMS (thermal expansion coefficient = 3.1 X ΙΟ·4 K·1) is heated to a temperature between 159867.doc -46 and 201216641 between 30 ° C and 180 ° C before contact and then at The SOI is cooled after it is removed, which produces a wavy 81 structure with good uniformity over a large area in a highly reproducible manner. In this way, we accurately control the pre-strain level in the PDms by changing the temperature (Fig. 12). The third method uses PDms that are extended with a mechanical table prior to contact with s〇i and then physically released after removal. Similar to the thermal method' this method allows for good uniformity and reproducibility, but it is more difficult to finely adjust the pre-strain level than the thermal method. For devices such as pn junction diodes and transistors, electron beam evaporation (Temescal BJD1800) and photolithographic patterning (via etching or delamination) of the metal layer (Al, Cr, Au) acts as contacts and gates pole. Spin-on dopant (SOD) (for p-type 'B-75X, Honeywell, USA; for η-type, Ρ509, Filmtronics, USA) was used for doping the ruthenium band. The s〇D materials were first spin coated (4000 rpm '20 s) onto the pre-patterned SOI wafer. A ruthenium dioxide layer (300 nm) prepared by electroporation enhanced chemical vapor deposition (PECVD) (Plasma Therm) was used as a mask for the SOD. After heating at 950 ° C for 10 seconds, the SOD and mask layers on the sI wafer were etched away using a 6:1 buffered oxide etchant (B0E). For the transistor device, the thermal growth (dry oxidation of the high purity oxygen in the furnace to a thickness between 25 nm and 45 nm, 1100 ° C '10 to 20 minutes) of the cerium oxide provides a gate dielectric. After completing all the device processing steps on the soi substrate, the strip with integrated device structure (usually 50 μπι width '15 mm long) is overlaid by the photoresist (az5214 or Shipley S181 8) to the underlying Si〇2 The device layer is protected during the HF surname. After removing the photoresist layer by oxygen plasma, a flat PDMS (70 ° C ' &gt; 4 hours) plate without any pre-strain is used for the SOI substrate in a flat geometry 159867.doc • 47-201216641 Remove the belt devices. The partially cured pDMS (at room temperature &gt; 12 hours after mixing the substrate with the curing agent) is then contacted with the Si ribbon devices on the fully cured PDMS panel. The curing of the partially cured pDMS is completed (by heating at 70 C), followed by removal of the plate, and the devices are transferred from the first PDMS plate to the new PDMS substrate. The contraction associated with cooling to room temperature establishes a pre-strain that causes the removal and release to establish a wavy device while the electrodes are exposed for detection. Measurement: An atomic force micrograph (AFM) (DI_31〇〇, Veec〇) was used to accurately measure the 4-wave properties (wavelength, amplitude). From the obtained image, the cross-sectional profile along the wavy Si is measured and statistically analyzed. The mechanical and electrical response of the wavy Si/PDMS was measured using a self-contained extension station and an AFM and a semiconductor parameter analyzer (AgUent, 5155C). Raman measurements were performed using a J〇Mn γν〇η HR 8〇〇 spectral analyzer using 632.8 nm light from a He-Ne laser. The Raman spectrum is measured at intervals of 1 μm along the wavy Si, wherein the focus is adjusted at each position along the length of the structures to maximize the signal. The measured spectrum is fitted by the Loren subfunction to locate the peak wavenumber. Due to the slight dependence of the peak wavenumber on the focus position of the fluoroscopy, the Raman results only provide a qualitative understanding of the stress distribution. Calculation of the length of the line, the strain of the belt and the strain of the enthalpy: These experimental results show that for the material and geometry range explored here, the shape of the wavy Si can be accurately approximated by a simple sine function (ie y=Asin(kx) ) (k = 27ta)) to indicate. Then calculate the length of the fence. 03 |λ — L| ^ | Use ε Γ~ to calculate the strain of the wavy Si. The peak value of the 矽 strain is generated at the peaks and troughs of the equal waves and is used to calculate, 159867.doc •48· 201216641

The Si thickness, and the radius of curvature at the crest or trough, is given by c^, where η is an integer and y&quot; is the second derivative of 乂. The sinusoidal function of the continuous shape is approximated, and the 矽 strain peak is given by εΓ*=_^. Figure 12 shows the wavelength as a function of the temperature at which the pre-strain is established. As shown in Fig. 13, the strain peak is independent of the Si thickness due to the wave amplitude and the linear dependence of the wavelength versus thickness /2 λ 〜 〇. Figure 15 illustrates the wavy structure containing nearly equal upward and downward displacements relative to the horizontal plane of the pDMs surface between the bands. The enthalpy strain is equal to the strain applied by the system examined here (Figure 16). One accordion bellows model: When 矽 can be separated from PDMS during compression, the system is dominated by the accordion bellows mechanism rather than the ribbing mechanism. In the case of the bellows, the applied compressive strain (Sapplied) has a wavelength of λο(1 + eapplied), where λ is the wavelength in the unstrained configuration, as described in equation (2). Since the length of the rim of the 矽 belt is approximately the same before and after the compressive strain, we can use the following relationship to determine the wave amplitude Α. Ππ° 1 + A0 sin 2π λΓ applied ) 1 + A sin 2π person 0 (1 + ε applied ) dx This equation has an asymptotic solution for &lt;«ΐ = &gt;/ΪΤ^ under small compressive strain' For equation (3), it also applies to the possible case of the separation system of S^PDMS, and the system follows the Newton mechanism. The 矽 strain peak is given by = * applied ^ applied 2ε, i+eappliedf2 ^ applied . For moderate compression, the % & stated approximation is the same as equation (4). In the application of moderate 159867.doc •49-201216641 within the limits of strain, similar to the wave amplitude, the 矽 strain peak has a similar functional form for the bellows model and the ridge model. Figure 18 shows the strain peaks calculated according to the above formula and according to equation (4). Device characterization. A semiconductor parameter analyzer (Agilent, $1Μc) and a conventional probe station were used for the electrical characteristics of the wavy pn junction diodes and transistors. The light of the Pn diode responds at about! The illuminance measurement of w/cm2 is measured by an optical power meter (Ophir 〇ptronics, Laser Power Meter AN/2). We use mechanical tables to measure these devices during and after extension and compression. As a way to explore the reversibility of this process, we measured three different pns under ambient light before and after about 100 compressions (to about 5% strain), extensions (to about i 5% strain), and after the release cycle. Diode. Figure 19 shows the results. Figures 20 and 21 show images, schematic descriptions, and device measurements from a wavy transistor. Example 2. The ribbed and wavy GaAs strips used in high performance electronic circuits on elastomeric substrates are manufactured to have thicknesses in the submicron range and have well defined, wavy &quot; and/or ridged shapes. Single crystal GaAs tape. The resulting structure on the surface of an elastomeric substrate or embedded in an elastomeric substrate exhibits a reversible extensibility and compressibility of &gt; 丨〇% strain, which is more than ten times greater than its own reversible extension and compressive strain. By integrating ohmic and Schottky contacts on the GaAs strips of such structures, high performance extendable electronics (e.g., metal semiconductor field effect transistors) can be achieved. Such electronic systems may be used alone or in combination with similar designs, dielectrics, and/or metallic materials to form a network frequency operation as well as extensibility, extreme flexibility, or with a complex 159867.doc - 50· 201216641 The circuit of the application of the ability of the surface of the hybrid curve shape to match. In traditional microelectronics, performance capabilities are measured primarily in terms of speed, power efficiency, and integration levels. The advancement in other newer electronic device configurations is driven by the ability to integrate or cover a large area on non-conventional substrates (e.g., low cost plastic, foil, paper). For example, a new form of X-ray medical diagnosis can be achieved by a large-area imager that isomorphically wraps the body to digitally image the desired tissue. A lightweight, wall-sized display that can be deployed on a variety of surfaces and surface shapes. Or sensors provide new technologies for architectural design. Various materials including small organic molecules, polymers, amorphous germanium, polycrystalline germanium, single crystal germanium wires, and microstructured tapes have been explored to accommodate semiconductor channels of thin film electronic devices that support these and other applications. . These materials make it possible to have a mobility that spans a wide range (i.e., from 1 〇 to 5 〇〇 cm 2 /V.s) and a mechanically bendable film shape on a flexible substrate. Applications requiring high-speed operation such as Large Aperture Interferometric Synthetic Aperture Radar (InSAR) and Radio Frequency (RF) monitoring systems require eight semiconductors with very high mobility, such as GaAs, or Inp. The fragility of single crystal composite semiconductors creates a number of manufacturing challenges that must be overcome in order to produce high speed, flexible transistors having such semiconductors. A practical method was established by constructing a metal semiconductor field effect transistor (MESFET) on a plastic substrate using a printed GaAs line array created from a 鬲ασ bulk wafer. These devices exhibit poor mechanical flexibility and close to 2 GHzifT. even in medium scale devices (e.g., micro-gate lengths). This example shows a GaAs-based MESFET (as opposed to a wire device) that is designed with a special geometry that not only provides flexibility but also provides an essential yield point that is significantly more than the GaAs itself 159867.doc •51· 201216641 (about 2% The mechanical extremability of the strain level (about 10%). The resulting type of extensible high-performance electronic system provides extremely high levels of flexibility and the ability to integrate contours with curved surfaces. This example of a GaAs system expands the "wave" described by us in four important ways: (1) it exhibits the extensibility of GaAs (a material that is more mechanically weaker than Si under actual conditions) (ii) Introducing a new &quot;warping&quot; geometry that can be used to achieve extensibility in conjunction with the previously described &quot;wavy&quot; configuration or independently of the previously described &quot;wave&quot; configuration, (iii) A new type of extendable device (ie MESFET) is achieved and (iv) it exhibits an extension that can extend over a larger range than 矽 and has greater symmetry in compression/tension. Figure 22 illustrates the steps for fabricating an extensible GaAs tape on an elastomeric substrate made of poly(dimethyloxane) (pDMS). The strips are produced from a still quality GaAs bulk wafer having a plurality of tele-crystal layers. The wafer is grown by growing a 2 〇〇 11111 thick A1As layer on a (100) semi-insulating GaAs (Si-GaAs) wafer, followed by sequentially depositing a layer of 丨 ( ( ( Prepared by a Si-doped nSGaAs layer with a thickness of 120 nm and a 4xl0" cm-3 carrier concentration. The pattern of the photoresist line defined parallel to the (0 Π*) crystal orientation serves as a chemical etch for the epitaxial layer (including GaAs and AlAs). The mask is anisotropically etched using an aqueous etchant of h3P〇4 and 〇2 to isolate the top layer into a length and orientation defined by the photoresist and having sidewalls at an acute angle relative to the wafer surface. Individual strips. The photoresist is removed after the anisotropic etch and then the wafer is immersed in an ethanol solution of HF (volume ratio of 2:1 between ethanol and 49% aqueous HF) to remove the A1As layer. And release tape... GaAs/S丨-GaAs). In this step, the use of ethanol instead of water reduces the 159867.doc •52–201216641 can occur in these fragile zones due to capillary forces during drying. Rupture. The lower surface tension of ethanol compared to water also minimizes the work of these GaAs belts. The disorder caused by drying in the layout. In the next step, 'contact the wafer with the released GaAs ribbon with the surface of a pre-stretched plate to align the strips in the direction of extension. In this case, where Devalli dominates the interaction between the two. For situations requiring stronger interaction strength, a thin layer of si〇2 is deposited onto the GaAs and 1&gt;£^3 is exposed shortly before the contact Ultraviolet-induced ozone (meaning, the product of oxygen in the air). Ozone produces a -Si-OH group on the surface of pDMs, which reacts with the surface to form a bridge to form a bridge of oxygen. Due to the geometry of the sides of the strips, the deposited Si〇2 is discontinuous at the edge of each strip. For both weak and strong bonding procedures, stripping the PDMS from the parent wafer allows All strips are transferred to the surface of the PDMS. Pre-strain relaxation in the PDMS results in spontaneous formation of large-scale ridges and/or sinusoidal structures along the strips. The geometry of the strips is greatly dependent on the application to the Pre-strain of the seal (by △UL The interaction between PDMS and the band, and the flexural rigidity of the bands. For the band studied here, the small pre-strain (&lt;2%) produces a relatively small condition for both strong and weak interactions. The highly sinusoidal wave of wavelength and amplitude (Fig. 22 right border, middle frame). These geometries in GaAs are similar to those reported for Si. Higher pre-strain can be applied (eg up to about 15%) to establish A similar type of wave in which there is a strong bond between the strips and the substrate 2. The difference between the composition of the non-periodic &quot;warping edges&quot; having a relatively large amplitude and width is formed under weak interaction strength and large pre-strain conditions. The geometry of type I59867.doc -53- 201216641 (Figure 22 right border, top box). In addition, our research shows that two types of structures (warping and wave) can coexist in a single band, with the bending stiffness varying along its length (eg, due to thickness variations associated with device structure). Figure 23 shows a thickness of 270 nm (including i-GaAs and Si-GaAs layers) and 1 〇〇μπι formed by a strong bond between PDMS (about 5 mm thickness) and the strip (discussed in this example) Several micrographs of a wavy GaAs strip with a width of 10 μm width for all strips. Using a 2-nm Ti and 28_nm Si〇2 layer on GaAs, the fabrication follows a strong bonding procedure. A biaxial pre-expansion of about 1.9% (calculated from the thermal response of PDMS) was established in the PDMS by thermal expansion (heating to 9 °C in a cage) shortly before or during the combination. This heating also accelerates the formation of interfacial aerobic bonds. The PDMS was cooled to room temperature (about 27 ° C) after transferring the GaAs tape, thereby releasing the pre-strain. Frames A, B, and C of Figure 23 show images collected from the same sample by optical microscopy, electron scanning microscopy (SEM), and atomic force microscopy (AFM), respectively. These images show the formation of periodic, wavy structures in the GaAs strips. The waves are quantitatively analyzed by estimating the cut lines from the AFM image (Fig. 23D) (Figs. 23E and 23F). The line parallel to the longitudinal direction of the strip clearly shows the periodic, wavy wheel temple consistent with the computational fit of the sine wave (dashed line in Figure 23E). This result is consistent with a non-linear analysis of the initial warp geometry in a uniform, thin, high modulus layer on a semi-infinite low modulus support. The peak-to-peak amplitude and wavelength associated with this function were determined to be 2 56 and 35.0 μιη, respectively. The distance between the horizontal distance between the two peaks (ie, the wavelength) and the actual line length between the peaks (ie, the surface distance measured by AFM, 159867.doc • 54· 201216641 surface distance) The proportional calculation strain (which we call strain) produces a smaller value than the pre-requisite change in the PDMS (ie, 3%) &lt;» This difference can be attributed to the low shear modulus of the PDMS and the ratio of the pdms substrate The island effect associated with the length of the shorter GaAs strip. The surface strain of the GaAs strip at the peaks and troughs (which we call the maximum GaAs strain) is obtained from the strip thickness and the radius of curvature of the peaks or troughs of the waves according to k/j/2 (where κ is the curvature). In this estimation, because the PDMS can be regarded as a lower half-infinite support of the modulus compared to the modulus of GaAs (Young's modulus of GaAs: 85.5 GPa vs. Young's modulus of PDMS: 2 MPa)' The direct effect of strain on GaAs in the PDMS stamp can be ignored. For the data of Figure 23E, the maximum GaAs strain is about 0.62%, which is more than twice the band strain (i.e., 13%). This mechanical advantage provides extensibility in GaAs tapes with physical properties similar to wavy. As shown in Fig. 23F, the peaks and trough regions of the bands are respectively lower and lower than the contour level (the right side of the green curve) of the surface of the original PDMS (i.e., the unbanded region). This result implies that a PD-like profile is taken as a PDMS under the result of the upward and downward forces applied to the PDMS by the GaAs strips in the peaks and troughs, respectively. The exact geometry of the pDMS near the peaks of the waves is difficult to estimate directly. I suspect that in addition to upward deformation, there is also a lateral necking caused by the cypress effect. The wavy band on the PDMS printer can be extended and shrunk by applying strain to the PDMS (so-called applied strain is expressed as positive for extension and negative for compression). The insets of Figures 23 and 23B show an image of a band that is deformed to its original flat geometry when applied with a relatively small extension strain (further extension). Further extension transfers more tension strain to the flat GaAsf, thereby When the excess strain 159867.doc -55 - 201216641 reaches the failure strain of GaAs, the tape is broken. The compressive strain applied to the substrate reduces the wavelength of the wavy bands and increases the amplitude of the wavy bands. When the bending strain exceeds the failure strain, compression failure occurs. This variation with the wavelength of the strain is consistent with the observations in the previous 且 and is different from the prediction of the wavelength invariance derived from the ideal model. The extensibility of the wavy GaAs strip is improved by using a mechanical stage (as opposed to thermal expansion) to increase the pre-strain applied to the PDMS. For example, transferring a GaAs strip with a Si 〇 2 layer to a pre-strain of 7.8% The surface of the PDMS stamp can produce a wavy band without any observable rupture in GaAs (Fig. 24A). In this case, the bending strain at the peak is estimated to be about 1.2%, which is better than GaAs. The strain at failure (i.e., about 2%) is lower. Similar to the low pre-strain condition, the undulating bands operate like an accordion when extending and compressing the system: wavelength and amplitude changes to accommodate the applied strain. Figure 24A shows that the wavelengths increase with tensile strain until the bands become flat and as the compressive strain decreases until the band breaks. These deformations are fully reversible and do not contain PDMS. Any measurable slip of GaAs on the surface, as compared to the slight asymmetry observed in a Si band with weak bonding and much lower pre-strain, the wavelength is in the compression and stretching with the applied strain And linearly changing (see the black line and symbol in Fig. 24B), in practical applications, it may be useful to encapsulate the GaAs strip and the extensible gas of the device. As a simple possibility, We cast and cure the pDMs prepolymer on a sample such as that shown in Figure 24 to embed the ribbons into the PDMS. The embedded system exhibits mechanical properties similar to those of the unembedded system, meaning that the wavelength is increased when the system is extended And 1598 67.doc -56 · 201216641 Reduce the wavelength when compressing the system (red line and symbol in Figure 24B). Due to the shrinkage of the cured second PDMS layer, a moderate amount of additional strain (about 1 / 〇) is produced. The slight decrease in the wavelength of the undulating bands, in turn, slightly extends the range of extensibility. Figure 24B shows this difference. In general, a system resulting from a pre-strain of about 7.8 ° can be extended or compressed to Up to about 10% strain without causing any observable damage in GaAs. The corrugated GaAs strip on the PDMS substrate can be used to make high performance electronic devices such as MESFETs. The electrodes of these electronic devices are via the transfer before PDMS Formed by metallization and processing on the wafer. The metal layers change the flexural rigidity of the strips in a spatially dependent manner. Figure 25A shows a GaAs ribbon integrated with ohmic strips (source and gate) and Schottky contacts (gate) after transfer to a PDMS substrate having a pre-strain of about 1.9%. The ohmic contacts are composed of a metal stack comprising AuGe (70 nm) / Ni (10 nm) / Au (70 nm) 'the metal stack is a mask defined by lithography and a quartz with a flowing A The tube is annealed on the initial wafer at a high temperature (ie, 45 〇 &lt; t continuation j... illusion. These ohmic sections have a length of 500 μηη. Two adjacent ohmic contacts The distance between the two is 5 〇〇μΓΠ (meaning the length of the channel). The Schottky contact with a length of 24 μm (meaning the length of the closed pole) is evaporated by electron beam by a mask designed according to photolithography. Directly depositing a 75-nm Cr layer and a 75-nm au layer to produce. The electrodes have a width equal to the width of the GaAs strips, that is, 1 〇〇 μιη; its relatively large size facilitates detection. The electrode and semiconductor channel can be significantly reduced. Dimensions to achieve enhanced device performance. As shown in Figure 25, these extendable MESFETs exhibit short-range periodic waves only in the area without electrodes. Waves are not present in the thicker region 159867.doc -57· 201216641 Mainly due to the additional thickness associated with the metals Caused by the increased flexural rigidity. The periodic wave can be initiated in a thicker region by using a pre-strain greater than about 3%. However, in such cases, due to critical enthalpy and/or The high strain peaks near the edges of the metal electrodes' tend to rupture at the edges of the metal electrodes. This failure mode limits the extensibility. To overcome this limitation, we eliminate the siloxane coupling. To reduce the strength of the interaction between the MESFET and the PDMS. For these examples, due to the detachment of the elements from the PDMS surface, &gt; 3% of the pre-strain produces a large width and amplitude. No periodic surface ribs. The graphs present this type of system (eg, prepared with a pre-strain of about 7%), wherein the large ridges are formed in the thinner regions of the devices, such as the vertical lines. Indicating that the detachment appears to extend slightly to a thicker region with ohmic strips. The contrast variation along the strip is due to reflection and refraction associated with light passing through the curved GaAs segment. The SEM image (Fig. 25C) clearly shows the arc Shaped ridge and flat The formation of flat, unstressed PDMS. These ridges show an asymmetrical profile with the tail extending to the side of the ohmic contact (as indicated by the red curve). This asymmetry can be attributed to the ohmic strip of the individual transistor and Unequal lengths of Schottky contacts (500 μηι vs. 240 μπι). Such a warped MESFET can be extended to its original flat state by an applied extended strain of between about 6% and about 7% (Fig. 25D) However, due to weak bonding, compressing the system shown in Figure 25B results in a continuous detachment of the tape from the PDMS surface to create a larger ridge. Embedding these devices into the PDMS according to the previously described procedure eliminates such uncontrolled ί·生生. Figure 25B shows the system in which the liquid pdms precursor fills the gap below the 159867.doc • 58· 201216641. The full enveloping rim defines the bands and prevents them from slipping and disengaging. The embedded device can reversibly extend and (iv) up to about 6% strain without damaging the belts. It is worth noting that when the embedded system is compressed - 5 (the top frame of the figure), a periodic small wave shape is formed in the region having the metal electrode and a new wave pattern is formed in the warped region. The formation of such new wavelets (in combination with the large ridges) enhances the compressibility. The system forces the regions to compress and extend in such a way that they are flattened. The PDMS, in turn, elongates the length of extension of the strips (bottom frame of Figure 25E). These results indicate that an embedded device having a large ridge (the geometry is distinct from the wavy) represents a combination of wavy methods or independent of the wavy method for achieving extensibility and compressibility. Promising approach.

The performance of Charisma can be estimated by directly detecting the current from the source to the bungee. Figure 26A shows a GaAs tape device fabricated on a wafer using a flat pDMS stamp and transferred to a pre-strained PDMS substrate with 4.7%. In this configuration, the metal electrode is exposed to air for electrical detection. After relaxing the pre-stretched PDMS to a strain of 3.4%, a periodic wavelet is formed in a thin region of the MESFET (Fig. 26A: from the top second box). When the pre-stretched PDMS stamp is completely relaxed, the wavelets in each section of pure GaAs are merged into individual large ridges (Fig. 26A: second frame from the top). By applying an extension strain of 4 · 7 ° / 〇, the ribs can be extended to their flat state (Fig. 26A: bottom frame). The IV curves of the same device with 〇.〇% (Fig. 26A: third frame from the top) and 4.7% (Fig. 26A: bottom frame) are plotted in red and black, respectively, in Fig. 26B I59867.doc -59 - 201216641. These results indicate that the current from the source to the drain of the warped MESFET on the PDMS substrate can be well regulated by the voltage applied to the gate, and the applied extension strain has only a minor effect on device performance. In summary, 'this example reveals a &quot;勉"&quot; and &quot;wave&quot; GaAs ribbon and the formation of an embedded PDMS elastomer substrate on a PDMS elastomer substrate. The method of "wavy" GaAs tape. The geometric configuration of these bands depends on the pre-strain level used in the manufacturing, the strength of the interaction between the PDMS and the tape, and the thickness and type of material used. The ability to adjust the geometry of the ribbed and wavy strips in a manner that accommodates the applied strain without transferring the strain to the material itself, the GaAs multilayer stack and the fully formed MESFET device And the wavy band exhibits a higher level of compressibility/extensibility. Successfully achieving high levels of mechanical extensibility in a material that is inherently weak in GaAs (and, as a result, other attractive mechanical properties such as extreme bendability) provides a wide range of other material types that can be applied to a wide range of materials. A similar strategy. The heat-induced pre-strain is attributed to the thermal expansion of the PDMS stamp, which has a bulk linear thermal expansion coefficient of ~=3·1χ10 4 μηη/μηι/° (on the other hand, the thermal expansion coefficient of '0&8-3 is only 5 73> ; &lt;1〇-6叫/卿/. (: Therefore, for samples prepared at 90 ° C and cooled to 27 ° C, the pre-strain on the PDMS (relative GaAs band) according to ιχι〇-4_5 73Χι〇- 6) χ(90-27)=1.9%. Method: Purchase GaAs wafer with user-designed epitaxial layer from IQE Company (Bethleon, ΡΑ). The lithography process uses αζ photoresist (ie ΑΖ 5214 and AZ nLOF 2020 for positive and negative imaging respectively. 159867.doc •60- 201216641 Residual agent in cooling with ice water bath (4% (85% by weight) in 4 mL, 52% H2〇2 (9) weight (6), and 48 (4) Anisotropically (iv) GaAs wafer with photoresist mask pattern. Dilute HF solution with ethanol (volume ratio 丨: dissolved in 仏^8 Chemical A1As layer. Will have release on the parent wafer) The sample of the belt was dried in a fume hood. The dried sample was placed in the chamber of the electron beam smelter (Demecal FC 1800) a layer covering the order of 2.Timnm Si〇2. The metal used to delete the FET device is deposited by electron beam evaporation before the removal of the A1As layer. By mixing the low-mode MDMS (A: B= 1:1〇' Sylgard 184 'D〇wc〇rning) pours into a single layer of pre-modified yttrium (tris-fluoro-, 1,1,2,2-tetrahydrooctyl) On the wafer 'then baked at 65t:T for 4 hours to prepare a PDMS printer with a thickness of about 5 _. In order to produce a strong bond, the seals were exposed to UV light for 5 minutes. During the transfer, through thermal expansion (in the oven) and / or mechanical force to extend the seal. Then laminate the wafer with the release tape to the surface of the (4) PDMS stamp ± and make it at high temperature (depending on the required pre-strain) Maintaining contact for 5 minutes. The parent wafer is peeled from the stamps and all T is transferred to the stamp. The pre-strain applied to the stamp is released by cooling to room temperature and/or removing the mechanical forces, resulting in The formation of wavy contours of the belts. In these mechanical evaluations, a specially designed table is used to extend and compress There are &quot;wave-like&quot; and &quot;warping&quot; GaAs tape PDMS stamps. Example 3: Two-dimensional extensible semiconductors The present invention provides for extension, compression, and in multiple directions, including directions orthogonal to each other. / or flexibly extendable semiconductors and extendable electronics 159S67.doc -61 - 201216641. The extendable semiconductor and extendable electronic device of this aspect of the invention exhibit good mechanical and electronic properties and/or device performance when extended and/or compressed in multiple directions. Figures 27A-C provide images of the present invention showing extensible germanium semiconductors of two dimensional extensibility at different levels of magnification. The extensible semiconductor system shown in Figures 27A-B is prepared by pre-straining an elastic substrate by thermal expansion. 28A-C provide an image of a different structural configuration of the extensible semiconductor exhibiting two-dimensional extensibility of the present invention as shown in the figure, wherein the semiconductor structure in Fig. α exhibits an edge line wavy configuration, Fig. 28 The semiconductor structure exhibits a herringbone wavy configuration, and the semiconductor structure of Figure 28C exhibits a random wavy configuration. Figures 29A-D provide an image of an extensible semiconductor of the present invention fabricated by pre-straining an elastic substrate by thermal expansion. Figure 30 shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility prepared by pre-straining an elastic substrate by thermal expansion. Figure 3 shows an image corresponding to a variety of extension and compression conditions. Figure 31A shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility fabricated by pre-straining an elastic substrate by thermal expansion. Figures 3i and 31C provide experimental results regarding the mechanical properties of the extensible semiconductor shown in Figure 31. Literature 1. SR Forrest, Nature 428, 911 (2004). 2. For recent advances and reviews, see proc 93, & 7 and 8 (2005). 159867.doc 62· 201216641 3. JA Rogers et al., /Voc iVai. iScz.. USA 98, 4835 (2001). 4. HO Jacobs, AR Tao, A. Schwartz, DH Gracias, GM Whitesides, Science 296, 323 (2002). 5. HEA Huitema et al., iVaiwre 414, 599 (2001). 6. CD Sheraw et al., dp/?/, Ze&quot; 80, 1088 (2002) 7. Y. Chen# A &gt; Nature 423, 136 (2003). 8. HC Jin, JR Abelson , MK Erhardt, RG Nuzzo, J. Vac. Sci. Techn. B 22, 2548 (2004). 9. PHl Hsu et al., IEEE Tfans. Electron. Dev. 5Ί, 371 (2004). 10. T. Someya^ A » Proc. Nat. Acad. Sci. USA 101, 9966 (2004) . 11. HC Lim et al., *Se«5· Jci· 乂119, 2005, 332 (2005). 12. JL Vandeputte Business, US Patent 6,580,1 5 1 (2003). 13. T. Sekitani et al., P/iyi. Ze&quot;. 86, 2005, 073511 (2005) . 14. E. Menard, RG Nuzzo, JA Rogers, Appl. Phys. Lett. 86, 2005, 093507 (2005). 15. H. Gleskova# A &gt; J. Noncryst. Sol. 338, 732 (2004). 16. S.-H. Hur, OO Park, JA Rogers, Appl. Phys. Lett. 86, 243502 (2005). 17. XF Duan et al., #加,, 425, 274 (2003)· 18 Z. Suo, EY Ma, H. Gleskova, S. Wagner, Appl. Phys. 159867.doc -63- 201216641

Lett. 74, 1177 (1999). 19. Y.-L. Loo^A &gt; Proc. Nat. Acad. Sci. USA 99, 10252 (2002). 20. T. Someya et al., Proc. Nat. Acad Sci. USA 102, 12321 (2005). 21. SP Lacour, J. Jones, S. Wagner, ZG Suo, Proc. IEEE 93, 1459 (2005). 22. SP Lacour^ A &gt; Appl. Phys. Lett 82, 2404 (2003). 23. DS Gray, J. Tien, CS Chen, Adv. Mater. 16, 393 (2004). 24. R. Faez, WA Gazotti, MA De Paoli, Polymer 40, 5497 (1999) 25.. CA Marquette, LJ Blum, 5/osewi. 20, 197 (2004). 26. X. Chen, JW Hutchinson, J. Appl. Mech. 71, 597 (2004). 27. ZY Huang, W. Hong, Z. Suo, J. Mech. Phys. Solids 53, 2101 (2005). 28. Properties of Silicon (An INSPEC publication, New York, 1988). 29. A. Bietsch, B. Michel, J. Appl. Phys. 88, 4310 (2000). 30. N. Bowden et al., iVaiwre 146, 146 (1998). 31. WTS Huck# A * Langmuir 16, 3497 (2000). 159867.doc -64- 201216641 32. CM Stafford# A &gt; Nat. Mater. 3, 545 (2004).

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[30] S. Wagner, SP Lacour, J. Jone, P.-HI Hsu, JC Sturm, T. Li, Z. Suo, Physica E 2005, 25, 326. Statement on the incorporation and change by citation The following references relate to self-assembly techniques that can be used in the methods of the present invention to transfer, assemble, and interconnect printable semiconductor components via contact printing and/or solution printing techniques, and are incorporated herein by reference in their entirety: 1) &quot;Guided molecular self-assembly: a review of recent efforts&quot;, Jiyun C Huie Smart Mater. Struct. (2003) 12, 264-271; (2) &quot;Large-Scale Hierarchical Organization of 159867.doc •69 · 201216641

Nanowire Arrays for Integrated Nanosystems&quot;, Whang, D.; Jin, S.; Wu, Y.; Lieber, CM Nano Lett. (2003) 3(9), 1255-1259; (3) &quot;Directed Assembly of One- Dimensional

Nanostructures into Functional Networks&quot;, Yu Huang, Xiangfeng Duan, Qingqiao Wei, and Charles M. Lieber, Science (2001) 291, 630-633; and (4) &quot;EIectric-field assisted assembly and alignment of metallic nanowires&quot;, Peter A. Smith et al., ^pp/· Ze&quot;. (2000) 77(9), 1399-1401. All references throughout this application, such as patent documents including patents granted or granted, or equivalents thereof; patent application publications; unpublished patent applications; and non-patent literature or other information source materials, full text The manner in which they are incorporated is incorporated by reference to the extent of the extent of the extent of the disclosure of the disclosure of the disclosure of each of the of Inconsistent parts are incorporated herein by reference. Any of the appendices herein are hereby incorporated by reference in their entirety as the extent of the present disclosure. In this article, the terms &quot;comprises&quot;,···includes (comprises)&quot;,&quot;comprised&quot;,&quot;comprising&quot; The existence or addition of one or more other features, integers, steps, components, or groups thereof is not intended to be exhaustive. In the term &quot;comprising&quot; or &quot;comprising (comprise(s))&quot; or &quot;comprised&quot; may be grammatically similar terms, such as &quot;by... It is also contemplated that a separate embodiment of the present invention is intended to be encompassed by a &quot;or&quot; or substantially 159 867. doc • 70 · 2012 16 641 constituting &quot;&quot; The present invention will be described with respect to the preferred embodiments and the invention. It should be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. Compositions, branches, devices, device components, materials, procedures, and techniques are applicable to the practice of the invention as broadly disclosed herein without resorting to undue experimentation. Group sigma, methods, and devices described herein All functional equivalents known to those skilled in the art, including device components, materials, procedures, and techniques, are intended to be included in the present invention. There are sub-ranges and individual values, as they are presented independently. The invention is not limited by the disclosed embodiments (including those shown in the drawings or exemplified in the specification). Or, the manner of explanation is given (*restrictive). The invention of the invention shall be limited only by the scope of the claim. [Simplified description of the drawings] Fig. 1 provides a micrograph of the extensible semiconductor of the present invention. Figure 2 shows an atomic force micrograph showing an expanded view of a conductor structure with a curved inner surface. The force display 3 shows a micrograph of the extensible semiconductor structure of the present invention. Invention 5 shows an optical micrograph of an extensible semiconductor structure of the present invention. An atomic force micrograph of an extensible semiconductor junction having a semiconductor structure 159867.doc • 71 · 201216641, the semiconductor structure and a three-dimensional relief pattern A flexible substrate is bonded, the three-dimensional relief pattern being located on a support surface of the substrate. Figure 6 shows a flow diagram illustrating an exemplary method of fabricating the extensible semiconductor device of the present invention. Figure 7 shows an image of an array of extensible semiconductor structures having longitudinal alignment of the inner surface of a curved curve supported by a flexible rubber substrate. Figure 8 shows a cross-sectional image of an extensible semiconductor structure of the present invention, wherein The printable semiconductor structure 776 is supported by a flexible substrate 777. As shown in Figure 8, the printable semiconductor structure 776 has an inner surface having a cycle shape in the form of a periodic wave. Figure 9A shows an illustration of the fabrication. A flow chart of an exemplary method of extending an array of thin film transistors. Figure 9B shows an optical micrograph of an array of extensible thin film transistors in a relaxed and extended configuration. Figure 10: Schematic illustration of the process for constructing an extensible single crystal device on an elastomer substrate. The first step (top frame) involves a single crystal thin (between 2 and 320 nm thickness) components or complete. The fabrication of an integrated device (ie, a transistor, a diode 4) is etched by a conventional lithography process followed by a top 矽 and Si 〇 2 layer on a silicon-on-insulator (SOI) wafer. To be done. After these processes, the tape structure is supported by the underlying wafer but not bonded to it (top frame). A pre-strained elastomeric substrate (poly(dimethoxydecane) PDMS, extended by dL) is brought into contact with the leads of the strips to cause bonding between the materials (middle frame). Peeling the PDMS' causes the bands to bond to their surface, and then releasing the pre-strain causes the PDMS to relax back to its unconstrained state (no stress length L). This relaxation results in spontaneous formation of well-controlled, highly periodic, extendable &quot;waveforms,&quot; structures (bottom boxes) in the bands. Figure 11: (A) Optical image of a massively aligned array of one of the wavy single crystal ribbons (width = 20 μηι; pitch = 20 μηι; thickness = l〇〇 nm) on PDMS. (B) An angled scanning electron micrograph of four wavy bands obtained from the array shown in (A). The wavelengths and amplitudes of the equal wave structures are extremely uniform in the array. (C) The surface height (top frame) as a function of the position of a wavy Si band on the PDMS and the wave number of the Raman peak (bottom frame) were measured by atomic force and Raman microscopy, respectively. These lines represent the sinusoidal fit of the data. (d) The amplitude (top frame) and wavelength (bottom frame) of the wavy band as a function of the thickness of the crucible are all pre-strained for positioning in the PDMS. These lines correspond to calculations without any fitting parameters. Figure 12: Warping wavelength as a function of temperature. The slight decrease in wavelength with temperature is attributed to the thermal shrinkage of the PDMS, which results in a shorter wavelength of the sample prepared at the higher temperature. Figure 13: Peak strain of 矽 as a function of 矽 thickness for a pre-strain value of approximately 9%. The red symbol corresponds to the bending strain calculated using the wavelength and amplitude, which are based on the equation describing the warping process. The black symbol corresponds to a similar calculation, but uses the wavelength and amplitude measured by AFM. Figure I4: (a) Atomic force micrograph (AFM; left border) and undulating contour (right border; wavy experimental data of a wavy single crystal 矽 tape (width = 20 μηη; thickness = 100 nm) on a pdms substrate Sinusoidal fitting) ^Top, middle, and 159867.doc •73· 201216641 The bottom port p-port knife corresponds to when the PDMS is subjected to _7〇/〇 (compression) along the length of the belt, 0% (unstressed) And 4.7% (extended) strain configuration. (B) Measure the average amplitude (black) and wavelength change (red) m of the wavy band as a function of the strain applied to the PDMS substrate (top frame), and use different substrates for tensioning (circumference) ) and compression (squares). The 矽 strain peak is a function of the applied strain (bottom box). The lines in these figures represent calculations without any freely fitting parameters. Figure 15: AFM top view image of the corrugated ankle band on the PDMS, and the cut line estimated at an angle relative to the long dimension of the bands. Figure 16: Shear strain as a function of applied strain. The red symbol corresponds to the strain calculated by integrating the wavelength and amplitude by numerical integration of the length of the profile. The wavelengths and amplitudes are manipulated using equations describing the warping process. The black symbol corresponds to the strain measured along the wavy Si band in the AFM surface profile in proportion to the surface to horizontal distance. Figure 17: (A) Optical image of a stretchable single crystal 矽 pn diode on a PDMS substrate with applied _ι% (top), 0% (middle) and 11% (bottom) strain. The aluminum region corresponds to a thin (20 nm) Al electrode; the pink and green regions correspond to the y (boron) and p (phosphorus) doped regions of germanium. (B) The current density as a function of the bias of the extendable shi pn diode, measured at various applied strain levels. The curves labeled &quot;Bright&quot; and &quot;dark&quot; correspond to devices that are exposed to ambient light or are shielded from ambient light. The line exhibition does not model the results. (C) Current-voltage characteristics of an extendable Schottky barrier MOSFET measured at -9.9%, 0%, and 9.9% strain applied (gate voltage varies from 〇v to -5 in 1 V steps) V). 159867.doc •74· 201216641 Figure 18: Peak strain of enthalpy as a function of applied strain. The blue line is based on an accordion bellows model, and the black line is one of the small strains, which is also consistent with the rib mechanism. Figure 19. Electrical measurements of wavy pn diodes, compression (approx. 5 ° / applied strain), extension (about 1 $ %) in three different devices (# 1 , # 2 and # 3 ) The application of strain) and the release of about 100 cycles before (before the cycle) and after (after the cycle) are estimated in three different devices. This data indicates that there is no system change in the nature of the device. The level of change observed is comparable to the level of change obtained by a single device that does not change the applied strain, and may be due to a slight difference in probe contacts. Figure 20: Optical image of the undulating Schottky barrier MOSFET in the unstressed (middle) and compressed (top) and tensioned (bottom) states (top frame). A schematic illustration of the device (bottom frame). Figure 21: Transfer curve measured in a &quot;wave-like&quot; 矽 Schottky barrier MOSFET under different applied strains. Figure 22: Schematic illustration of the steps for creating &quot;warping, and, &quot;wave&quot; GaAs strips on a PDMS substrate. The left bottom frame shows the deposition of thin Si(R) 2 on the surface of the strips to promote strong bonding with the PDMS. This combination results in the formation of a wavy geometric shape displayed in the right Yin box. The weak Van der Waals force combination (and medium to high level pre-strain) results in a warp geometry as shown in the upper right frame. Fig. 23 is an image of a corrugated GaAs strip formed on a PDMS substrate with a pre-strain of about 19% generated by thermal expansion. Optical (A), SEM (B), three-dimensional AFM (C) and topographic AFM (D) images of the same sample. The SEM image 159867.doc -75- 201216641 was obtained by tilting the sample stage at an angle of 45° between the sample surface and the detection direction. (The points on the strips may be the residues of the sacrificial AlAs layers.) Surface height distribution (E, F) plotted along the blue and green lines shown in (D) respectively Figure 24: (A) An optical micrograph of a wavy GaAs ribbon formed at 7.8% pre-strain and strongly bonded to the PDMS, acquired under different applied strains. The blue bars on the left and right highlight some of the peaks in the structure; the change in distance between the bars indicates the dependence of the wavelength on the applied strain. (B) The wavelength change as a function of the applied strain of the wavy GaAs strip shown in (A), plotted in black; a similar data for the sample (A) after embedding PDMS, plotted in red. Figure 25: Image of a GaAs strip integrated with ohmic (source and drain) and Schottky (gate) contacts to form a complete MESFET. (A) An optical micrograph of a wavy band formed using a 1.9% pre-deformation and a strong bond with the PDMS, which shows the formation of periodic waves only in the electrodeless region (gray). (B) Optical image and (C) SEM image of the warp band formed by pre-strain of about 7% and weak combination with the PDMS. (D), the optical and image of the two ridger devices shown in (B) after they are extended to flat. (E), the individual tape devices shown in (B) have different externally applied strains (ie, from top to bottom, 5.83% compressive strain, no applied strain, and 5.83% extended strain) are embedded in A set of optical images after PDMS. Figure 26: (A) Optical image of a GaAs-band MESFET with different strains on a PDMS stamp constructed in a PDMS substrate. The pre-application 159867.doc -76 - 201216641 applied to the PDMS seal before the devices were transferred to the surface of the PDMS stamp became 4.7%. (B) Comparison of the I-V curves of the apparatus shown before and after the system was subjected to an elongation strain of 4 7% (A). Figures 27A-C provide images of the extendable semiconductor of the present invention exhibiting two-dimensional extensibility at different levels of magnification. Figures 28A-C provide images of three different structural configurations of the extendable semiconductor of the present invention showing two-dimensional extensibility. 29A-D provide images of the extensible semiconductor of the present invention prepared by pre-straining the elastic substrate by thermal expansion. Figure 30 shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility without extending and compressing. Figure 31A shows an optical image of an extensible semiconductor exhibiting two-dimensional extensibility fabricated by pre-straining an elastic substrate by thermal expansion. Figures 31B and 31C provide experimental results regarding the mechanical properties of the extensible semiconductor shown in Figure 31A. [Major component symbol description] 700 Semiconductor component 705 Printable substrate 710 Support surface 715 Curved semiconductor structure 720 Curved inner surface 730 Deformation axis 750 Recessed area 760 Undulating feature 776 Printable semiconductor structure 777 Flexible substrate 159867.doc ·7Ί ·

Claims (1)

201216641 VII. Patent Application Range 1. An extendable electronic device comprising: an elastic substrate having a support surface; and I 3 continuously or discontinuously bonded to the support surface of the elastic substrate - printable The single crystal semiconductor structure of the transistor or diode 'where the printable single W semiconductor structure has a wave or a plug 4' is characterized by one or more selected from the range of 5 micrometers to (9) micrometers The period is selected from the range of (10) nanometers to h5 micrometers - or a plurality of amplitudes. 2. 3. 4. As requested by the device, where the geometry is sinusoidal. Such as the device of Kiss 1 (where the geometry is a snap geometry). The device of extra long item 1, wherein the transistor or body is encapsulated by an encapsulation layer to provide a raised region of the encapsulating material below the wave or snap geometry. I ==, in which the transistor or the two-pole system is intended to be incorporated in the device of claim 1, wherein the printable single crystal semiconductor structure is selected from 5 nanometers to 5 The thickness of the 〇 micron range, the thickness selected from the range of 1 nm to 1 and the thickness selected from the range of 50 nm to 50 μm 7. 8. The device of claim 1 has a structure selected from the group consisting of 20 From the range of meters to 50 micrometers - as the device of claim 1, wherein the printable single crystal germanium semiconductor structure is one thickness in the range of 320 nm and is selected from the micro-width of the Shi Xi belt or the Shi Shenhua unloading belt . Wherein the periods and amplitudes are within 5 〇 / 〇 159 867.doc 201216641 均 0 9 · The device of claim 1 wherein the wave or buckle geometry is further characterized by waves, buckles or waves and buckles Both extend in two dimensions. 10. The device of claim 1, wherein the transistor or the bipolar system is a thin film electric beta body, a MOS field effect transistor or a pη junction diode. 11. A method for fabricating an extendable electronic device, the method comprising the steps of: providing a transistor or a diode comprising a printable single crystal germanium semiconductor structure; providing a pre-strain elasticity in a -extended state a substrate, wherein the pre-strained elastic substrate has an outer surface; and bonding at least a portion of the transistor and the diode to the outer surface of the pre-strained elastic substrate in an expanded state; and allowing the elastic substrate to be at least partially released a release state in which the release of the elastic substrate bends or otherwise deforms the transistor or diode, such that the printable single crystal semiconductor structure is characterized by - or more selected from the range of 5 micrometers to 5 micrometers The extensible electronic device is fabricated by a period of time and a wave or buckle geometry selected from the range of - nanometers to micrometers. The method of 12::f item 11 wherein the step of bonding the transistor and the diode to the external surface of the pre-strained elastic substrate in the -extended state is carried out by dry transfer contact printing. The method of 13· = item U further includes the step of providing an encapsulation layer for encapsulating the transistor or diode on the elastomeric substrate. 159867.doc 201216641 14. 15. 16. 17. 18. 19. 20. Method of claim 13 wherein a capping material is provided in the raised area below the wave or snap geometry. The method of claim 11, wherein the transistor or diode has a thickness selected to provide one or more of a range selected from 5 micrometers to 5 micrometers depending on the release of the elastic substrate. The period and the wave or buckle geometry selected from one or more of the ranges from 100 nanometers to 1.5 micrometers. The method of claim 11 wherein the printable single crystal semiconductor structure has a thickness selected to provide one or more selected from the range of 5 microns to 50 microns depending on the release of the elastic substrate. The period and the wave or buckle geometry selected from one or more amplitudes ranging from 1 nanometer to 15 micrometers. The method of claim 11, wherein the pre-strained elastic substrate has a strained state selected to provide one or more cycles selected from the range of 5 micrometers to 50 micrometers and selected from 1 according to the release of the elastic substrate.波浪 The wave or buckle geometry of one or more amplitudes in the range of 1.5 mils. The method of claim 11, wherein the pre-strained elastic substrate is introduced by about 1% to 30. /. Pre-strained by strain. The method of claim 11, wherein the pre-strained elastic substrate is pre-strained by expanding along a first axis or along the first and second axes. The method of claim 11, wherein the extendable electronic device is an extendable thin film transistor, a MOSFET, or a pn junction. 159867.doc