201218308 六、發明說明： 【發明所屬之技術領域】 、本發明係關於一種藉由真空吸附而將平板狀之基板固 定之吸附纟，更詳細而言本發明係關於―種吸附面由多孔 質材料形成之吸附台。 【先前技術】 错由真g。及iw而將基板固定之吸附台係利用於各種領 域之基板加工裝置中。例如，於在大型之玻璃基板或半導 體基板（所謂之母基板）上對多個電子零件進行圖案形成， 並將其按“電子零件分斷之基板加卫裝置中，藉由使用 刀輪寻之機械刻劃或使用雷射光束之雷射刻劃，而進行於 基板上形成劃線之加工。此時’為於所需位置上形成劃線: 而對基板進行定位並利用吸附台將基板固定。 於用於基板加工裝置之吸附台中，已知有於金屬板上 =成多個吸附用之貫通孔並將其作為吸附面之類型的吸附 台、及將多孔質板作為吸附面之類型之吸附台（參照 文獻1 )。 圖8係表示於金屬板上形成有多個吸附用之貫通孔之 類型的吸附台之一例之剖面圖"及附台5〇包含於上面… (成為吸附面之載台表面）i載置有基板之金屬製之載台 人方、其周緣支持載台51之底座52。载台51於載置有 基板G之區域中’呈格子狀形成有多個貫通孔53。載台η 之下方緊貼處’形成有中空空間54，將載台5ι之背面川 201218308 設為面向中空空間54。而且，各貫通孔53通達中空空間 54 ° 底座52之中心安裝有插塞55，插塞55中形成有通達 中工空間5 4之流路5 5 a。插塞5 5進而經由外部流路5 6連 接於真空泵57 '空氣源58 ’藉由閥59、60之開閉而可將 中空空間54設為減壓狀態，或者使其返回至大氣壓狀態。 吸附台50中’藉由將基板G載置於載台 所有貫通孔53時發揮較強之吸附力，可穩定地固定基相 G。例如，利用真空泵57排氣時若所有貫通孔53均被基柄 G阻塞，利用設置於插塞5 5附近之壓力感測器61進行監 控，中空空間54之壓力減壓至Kpa左右之壓力，若除 去基板G而開放所有貫通孔53則中空空間54成為巧κρ; 左右之壓力。因此，只要以阻塞所有貫通孔53之方式載置 基板G ’則該些2個狀態之間之屢力i (差壓約w咖左 右)成為經由各貫通孔53而發揮吸附力。再者，於吸附台 50之情形時，若因ΑΓ 土 之位置偏移而開放即便1個貫通 孔53 ’則自所開放之貫通孔姦 子變弱。 生較大之洩漏，吸附力—下 之類型之吸附台的使用噴之… 替圖8心::製:台使:由/，質板所構成之載“ 且於上面川與下面71b“= 中含有多個細微孔 71 ..... 之間具有透氣性。再者，除恭 外之各部分係與圖"目同之構成，故標註相同= 4 201218308 省略部分說明。 於吸附d 70中’右使真空泵57運轉則中空空間54變 成減壓狀惑，經由多孔質板整個面之細微孔而產生洩漏， 成為可以載台71之上面71a之大致整個面吸附。因此，不 論將基板G載置於上面7 1 a之何處均吸附。然而，於多孔 質板中通過細微孔之氣體之流動之阻力較大 '洩漏量較 小’故無法期望較大之吸附力。 例如，利用真空泵57排氣時若上面71a之全體（即吸 附面全體）完全被基板G阻塞，雖然中空空間54以壓力感 測器61而減壓至_60KPa左右之壓力為止，但於除去基板g 而開放上面71 a全體之情形時，細微孔之洩漏量較小，中空 空間54變成-55 KPa左右之減壓狀態。即，多孔質板只能 將較小之壓力差（差壓5 KPa左右）用作吸附力。 [先前技術文獻] [專利文獻] 專利文獻1 :日本特開2000-3 3 2087號公報 【發明内容】 [發明所欲解決之問題] 如上述般’於後者之使用多孔質板之吸附台盔 法後得如於前者之吸附台50中經由貫通孔53所能獲得之 =吸附力。於吸附台7〇中，因於基板G與上面7ia (多孔 質面）接觸之整個面中產生吸附力，故只要增加與上面& 接觸之基板面積則吸附力會一點點增大。因此，為將載置 201218308 於上面…之基板G確實地固定，必須充分增大基板〇之 面積以使作用於基G全體之吸附力大於為保持基板所必 需之力（亦可稱為基板保持力）。 例如，於圖9所示之吸附台7〇中，於上面7ia之上， 右將可使吸附力產生之區+ π刀座玍之域之面積作為吸附有效面積s，則 雖亦依存於多孔質板之材質、尤其是孔隙率，但於一般之 陶瓷製之多孔質板之情形時，如圖 附有效面積S之60%以上（即0.6s 10所示，若不以覆蓋吸 以上）之方式載置基板 G ’則無法穩定地固定基板。 因此，本發明之目的在於提供一種吸附面使用多孔質 板之吸附台，其具有能夠以作用於載置於吸附面之基板之 吸附力強於（或者相反弱於）迄今為止之吸附力的方式進 行調整之構造。 又’本發明之目的在於提供一種吸附台，其藉由僅以 基板覆蓋載置有基板之載台之上面中之吸附有效面積的 10 °/〇〜3 0 %即可獲得穩定地固定該基板所需之充分之吸附 力。 進而’自其他觀點研究而成之本發明之目的在於提供 一種吸附台’其於使用多孔質板之吸附台中，使產生於多 孔質内之洩漏之流動之狀態發生變化，使吸附力強於先 前、或相反使吸附力弱於先前，藉此可調整對載置於吸附 台之基板之吸附力之大小或分佈。 [解決問題之手段] 為解決上述問題而完成之本發明之吸附台，其包含由 201218308 以多孔質板形成且上面載置基板之載台 部分之底座構成…内部形成並：：之周緣 面朝向中空空間之方式構成的載台本體、==之背 行減壓之真空排氣機構；載台之背面係 ：：：進 構件覆蓋並且於密封構件之-部分上形成;㈣ 漏成為減壓狀態則自"漏孔經由多孔質板而產生， [發明之效果] :艮據本發明’若對中空空間進行真空排氣而使i成為 孔ί:二Γ形成於密封構件之一部分之茂漏孔經由多 二生戌漏。由於线漏孔以外之部分被密封構件阻 二二亚非如迄今為止般於多孔質板整個面（載台整個面) …地產生@漏’而是自$漏孔產生朝向其上方區域之 『。其結果為，多孔質板内之茂漏之產生狀態（氣 動狀態）發生變π ’且吸附力之大小或分佈發生變 化，而以與迄今為止之吸附台（例如參照圖9)不同之分佈 獲得吸附力。、具體而言，吸附力之產生區域係集中於茂漏 孔之上方區域’即便為多孔質板亦可僅使形成茂漏孔之附 近產生吸附力。 此處，洩漏孔亦可自密封構件向深度方向延伸而於多 孔質板形成洩漏孔之底。 右#由加深洩漏孔而於多孔質板形成洩漏孔之底，則 洩漏量依存於多孔質板上所形成之洩漏孔之表面積（孔之 底面積與側面面積之和）而增大，又，多孔質板内之氣體 201218308 之流動之分佈亦發生變化’與先前之未設置密封構件與戌 漏孔之多孔質板之吸附台相比可加強吸附力。 此處’洩漏孔之底之深度較佳為多孔質板之板厚的丨0〇/〇 〜50%。 右形成於多孔質板之漏孔之深度較此淺，則雖可調 整產生吸附力之區域之分佈，但洩漏量變少且吸附力變 小。若洩漏孔之深度較此深’則吸附力於大致整個上面作 用’洩漏量亦變得過大，根據基板之種類不同，過強之吸 附力有可能對基板帶來衝擊而造成惡劣影響。因此，只要 洩漏孔之底之深度為多孔質板之板厚的1〇%〜5〇%，便可獲 付大於未形成Ά漏孔之多孔質板之吸附力，並且可獲得適 度之吸附力，而成為吸附力保持平衡之吸附台。 於上述發明中，較佳為洩漏孔於載台之背面呈格子狀 地形成複數個。藉此，可遍及載台之全體而大致均勻地吸 附基板。 於上述發明中，洩漏孔亦可於載台之背面形成複數 個，並且使洩漏孔之分佈、洩漏孔之每單位面積之數、洩 漏孔之深度、洩漏孔之徑中之至少任—者變得不均勻，從 而使吸附力不均勻地作用。 藉由將洩漏量設為不均勻之分佈，吸附力亦可不均勻 地靶加給載台。例如，可使吸附力於中央與周圍變化、或 者可對載台之一部分施加較強之吸附力。 【實施方式】 8 201218308 以下’針對本發明之吸附一 一 之5平細内谷，根據表示Α 貫鈀形態之圖式而進行詳細說明。 ’、’、 圖1係表示本發明之吸附a — 係其平面圖。貫施例之剖面圖，圖2 吸附台ίο包含載台本體13,該載台本體13係 lla(載台表面）載置有基板〇之 〜々艰之載台11、及對 台11以於其周緣抵接之方式 f於載 叭運仃支持的底座12構成。士 貫；形悲中，係由載台丨丨之周 门凉之下面11C被底座 持，但亦可與圖9中所說明之載 2支 ^ ,al ^ ^ 戰71冋樣地，由載台周緣 之側面破底座支持。任一橹犯】琢 “立 清料只要使接觸面密著而不自 邊界面產生洩漏便可。 自 載台11係利用陶瓷製之多 夕札貝板形成，且於背面 上固著有密封構件2 1並且以—定門 ,,,,23 r?9, 疋間距呈格子狀地形成有密 封孔23 ( 22 )。關於該些之詳 T 奋於下文敍述。於載台 11及底座12之除周緣以外之内 邛分’ 4由將載台Η之 下面及底座12之上面加工為凹部 〇丨而形成中空空間14,且載 台1 1之背面1 lb (内側部分之下面） r面）係面向中空空間14。 再者，中空空間14既可僅藉由於載台 轨σ U側加工凹部而設， 亦可僅藉由於底座1 2側加工凹部而設。 於底座12之中心安裝有插塞 ^ ^ 5且於插塞15中形成 有通達中空空間u之流路l5a。 土 1 5進而經由外部流路 16而連接於真空泵17、空氣源18， 且了错由打開閥19而 使中二空間14成為減壓狀態，哎者 ^次考了齬由打開閥30而使 其返回至大氣壓狀態。 201218308 於插塞15之附近之外部流路16安裝有壓力感測器 31，其可監控中空空間14之壓力’並且可作為真空開關而 使用，即藉由預先設定閾值，而進行是否能夠確保為穩定 地固定基板G所需之基板保持力之判定。 其次，對載台1 1之背面1 lb之加工進行說明。圖3係 表示由多孔質板構成之載台11之加工順序之圖。 首先，如圖3 (a)所示，將載置有基板之表面iu加 工為平坦面，並於相反側形成由背面i lb與周緣之下面^ ^ 構成之凹部。 繼而，如圖3(b)所示，以覆蓋背面Ub之方式固著 密封構件2卜具體而言，以覆蓋載台n之背面^全體之 方式塗佈用作接著劑之環氧樹脂作為密封構件2丨。再者， 密封構件2丨只要為可阻斷多孔質構件之透氣性之材料便無 特別限定。 然後’如圖3 (e)所示，對所形成之密封構件2ι形成 洩漏孔22。本實施形態中’洩漏孔22係以—定間距遍及背 面lib之全體而呈正方格子狀地形成。 ，接著’如圖3(d)所示’朝向載台"之深度方向而加 工Λ漏孔22，形成到達載台1 1内部之沒漏孔23(未貫通）。 具體而言，藉由鑽孔加工或雷射剝離加工而形成所需深度 之洩漏孔23。 & 开^成於載口 1 1之洩漏孔之較佳深度為板厚t 1 〇%〜 5〇%°例如’若將板厚設為2。咖則只要將茂漏孔設為2_ 〜10 mm之深度，便可設為平衡較佳之吸附力。即，可確 10 201218308 實地固定具有載台11之有效吸附面積之1〇%〜30〇/〇之面積 的基板。 再者’只要不貫通載台1 1 ’則既可形成較此深之密封 孔23，亦可設為僅貫通密封構件21之密封孔22。分別以 特徵性分佈而產生吸附力。 又’戌漏孔之較佳孔徑雖亦依存於多孔質板之材質、 洩漏孔深度等其他參數，但只要為〇 5 mm〜5 mm即可。 圖4〜圖6係示意表示根據洩漏孔22、23之深度之不 同之吸附狀態的變化之圖。 圖4為形成僅貫通密封構件2丨之洩漏孔22時之吸附 狀態，圖5為於載台丨丨上形成深度為5 mm左右（板厚20 mm之25% )之洩漏孔23時之吸附狀態，圖6為於載台i i 上形成深度為15 mm左右（板厚2〇 mm之75%)之洩漏孔 時之吸附狀態。孔徑均為3 mm。 任一圖中，（a)係載台11之剖面之示意圖，以實線表 示產生氣流流動之範圍。又，（b)係載台n之上面lla 之不思圖，以A、B、C表示產生吸附力之區域。 於封構件21上僅開有汽漏孔2 2之情形時，如圖4 所示’汽漏量受到限制’吸附力僅於茂漏扎22之上方近處 之區域A起作用。於此情形時，例如可利用於欲以較弱吸 附力吸附非常脆之基板之情形等。 於開有孔底到達多孔質板之洩漏孔23之情形時，如圖 5所示，吸附區域B變得相當寬，而且於娜23之上方 近處之位置夕孔負之板厚變帛，故流動之阻力變小，吸附 201218308 力亦增大。於此情形時，基板G之面積即便為載台丨丨之吸 附有效面積S之10%〜30%左右亦可確實地吸附: 於加深茂漏孔至孔底成為多孔質板之板厚之5〇%以上 之深度之情形時，如圖6所示’吸附區域^進而變寬，在 載台Π之吸附有效面積之大致整個面而較強地吸附。 以上，對本發明之代表性之實施例進行了說明，但本 發明並不特定於上述實施形態，於達成其目的且不脫離申 請專利範圍之範圍内，可進行適當的修正、變更。 例如，迄今為止，係於載台u之上面Ua上，以儘可 能變成均勾分佈之方式使吸附力呈格子狀地發揮作用，但 亦可與此相反地，纟洩漏孔之分佈、洩漏孔之每單位面積 之數、洩漏孔之深度、洩漏孔之徑等參數變得不均勾，而 使吸附力不均勻地發揮作用。 圖7係將繼23之深度分佈設為不均句之例。本實 施形態中，係將左側半部分設為圖5中所說明之茂漏孔Μ， 將右側半部分設為圖4中所說明之茂漏孔22。藉此，可於 沿劃線將基板G之左側較強地吸附，並較弱地吸附右側之 狀態下進行加工，並在外力施加於基〇上時可藉由右側 易避讓而不會施加過大之負荷。 不僅可㈣漏孔之深度設為不均句，還可將孔徑設為 不均勾，#可將孔數設為不均句。又，即便❹漏孔之分 佈、為漏孔之每單位面積之數設為不均句亦可獲得相同之 效果。 央與外側將洩漏孔 又，除此以外，亦可於載台u之中 12 201218308 設為不均勻而使吸附力發生變化。 [產業上之可利用性] 本發明之吸附台可作為基板加工裝置中固定基板之载 台而利用。 【圖式簡單說明】 圖1係表示本發明之吸附台之一實施例之剖面圖。 圖2係圖1中之吸附台之平面圖。 圖3係表示用於本發明之吸附台之載台之加工順序的 步驟圖。 圖4係示意表示利用洩漏孔22之載台之吸附狀態之 圖。 圖5係示意表示將洩漏孔23之深度設為5 mm左右時 之載台之吸附狀態的圖。 圖6係示意表不將洩漏孔23之深度設為丨5 mm左右時 之載台之吸附狀態的圖。 圖7係示意表不使洩漏孔23之深度於載台之左右發生 變化時之載台之吸附狀態的圖。 圖8係表示於金屬板上形成多個吸附用貫通孔之類型 之吸附台的一例之剖面圖（先前例）。 圖9係表示於吸附面使用多孔質板之類型之吸附台的 一例之剖面圖（先前例）。 圖10係I示為利用® 9之先前類型之吸附台將基板穩 定地固定所需之基板面積的圖（先前例）。 13 201218308201218308 VI. Description of the Invention: [Technical Field According to the Invention] The present invention relates to an adsorption enthalpy for fixing a flat substrate by vacuum adsorption, and more particularly to the present invention relates to a porous material The adsorption station formed. [Prior Art] The error is true g. The adsorption stage in which the substrate is fixed by iw is used in a substrate processing apparatus in various fields. For example, a plurality of electronic components are patterned on a large glass substrate or a semiconductor substrate (so-called mother substrate), and are used in a substrate-assisting device in which electronic components are separated, by using a cutter wheel. Mechanical scribing or laser scribing using a laser beam, and forming a scribe line on the substrate. At this time, 'the scribe line is formed at the desired position: the substrate is positioned and the substrate is fixed by the adsorption stage. In the adsorption stage for a substrate processing apparatus, an adsorption stage of a type in which a plurality of adsorption through-holes are used as an adsorption surface, and a type in which a porous plate is used as an adsorption surface is known. The adsorption stage (refer to Document 1). Fig. 8 is a cross-sectional view showing an example of a suction stage of a type in which a plurality of through holes for adsorption are formed on a metal plate, and the attached table 5 is included in the upper surface. The stage surface of the stage i) is a metal-made stage on which the substrate is placed, and the base 52 of the peripheral support stage 51. The stage 51 is formed in a lattice shape in a region in which the substrate G is placed. Hole 53. stage η The square abutment portion is formed with a hollow space 54, and the back surface of the stage 5 1201218308 is set to face the hollow space 54. Moreover, each of the through holes 53 reaches the hollow space 54 °. The center of the base 52 is provided with a plug 55, and the plug 55 A flow path 5 5 a is formed in the middle working space 5 4 . The plug 5 5 is further connected to the vacuum pump 57 via the external flow path 57 . The air source 58 ' can open the air gap 58 by the opening and closing of the valves 59 , 60 . The pressure-reducing state is set to return to the atmospheric pressure state. In the adsorption stage 50, when the substrate G is placed on all the through holes 53 of the stage, a strong adsorption force is exerted, and the base phase G can be stably fixed. When all of the through holes 53 are blocked by the base handle G when being evacuated by the vacuum pump 57, the pressure sensor 61 provided in the vicinity of the plug 5 5 is used for monitoring, and the pressure of the hollow space 54 is depressurized to a pressure of about Kpa. When the substrate G is removed and all the through holes 53 are opened, the hollow space 54 becomes a pressure of about κρ; so that the substrate G' is placed so as to block all the through holes 53, and the mutual force i between the two states is The differential pressure is about w w) and becomes through each through hole 5 In addition, in the case of the adsorption stage 50, if one of the through holes 53' is opened due to the positional deviation of the earth, the hole is opened from the open hole. Leakage, adsorption force - the type of adsorption table used under the spray... For the figure of Figure 8:: System: Taiwan: The load consisting of /, the quality plate "and above the Sichuan and below 71b" = contains multiple The fine holes 71 ..... are breathable. In addition, except for the parts of the line, the parts are the same as the figure, so the label is the same = 4 201218308 Omitted part. In the adsorption d 70 ' When the vacuum pump 57 is operated to the right, the hollow space 54 is decompressed, and leakage occurs through the fine pores of the entire surface of the porous plate, so that the entire surface of the upper surface 71a of the stage 71 can be adsorbed. Therefore, regardless of where the substrate G is placed on the upper surface, it is adsorbed. However, the resistance of the flow of the gas passing through the fine pores in the porous plate is large, and the amount of leakage is small, so that a large adsorption force cannot be expected. For example, when the vacuum pump 57 is exhausted, the entire upper surface 71a (that is, the entire adsorption surface) is completely blocked by the substrate G, and the hollow space 54 is depressurized to a pressure of about _60 KPa by the pressure sensor 61, but the substrate is removed. g When the upper 71a is opened, the leakage amount of the fine holes is small, and the hollow space 54 becomes a decompressed state of about -55 KPa. That is, the porous plate can only use a small pressure difference (about 5 KPa of differential pressure) as the adsorption force. [Prior Art Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2000-3 3 2087 [Draft of the Invention] [Problems to be Solved by the Invention] As in the above, the absorbing helmet of the latter using a porous plate The method is as follows: the adsorption force which can be obtained through the through hole 53 in the adsorption stage 50 of the former. In the adsorption stage 7, since the adsorption force is generated in the entire surface of the substrate G in contact with the upper surface 7ia (porous surface), the adsorption force increases a little as long as the area of the substrate in contact with the upper surface is increased. Therefore, in order to securely mount the substrate G on which 201218308 is mounted, it is necessary to sufficiently increase the area of the substrate 以 so that the adsorption force acting on the entire base G is greater than the force necessary to hold the substrate (also referred to as substrate retention). force). For example, in the adsorption stage 7〇 shown in Fig. 9, above the upper 7ia, the right side can make the area of the region where the adsorption force is generated + the area of the π knife holder as the adsorption effective area s, although it depends on the porous The material of the plate, especially the porosity, but in the case of a general ceramic porous plate, as shown in the attached effective area S of 60% or more (that is, 0.6s 10, if not covered by the suction) When the substrate G' is placed on the substrate, the substrate cannot be stably fixed. Accordingly, an object of the present invention is to provide an adsorption stage using a porous plate for an adsorption surface, which has a manner in which the adsorption force acting on the substrate placed on the adsorption surface is stronger (or oppositely weaker than) the adsorption force hitherto. Make the adjustment structure. Further, an object of the present invention is to provide an adsorption stage which can stably obtain the substrate by covering only 10 ° / 〇 to 30 % of the effective area of adsorption in the upper surface of the stage on which the substrate is placed. The sufficient adsorption force required. Further, the object of the present invention, which has been studied from other viewpoints, is to provide an adsorption stage which changes the state of the flow of leakage generated in the porous body in the adsorption stage using the porous plate, so that the adsorption force is stronger than the previous one. Or, conversely, the adsorption force is weaker than before, thereby adjusting the magnitude or distribution of the adsorption force to the substrate placed on the adsorption stage. [Means for Solving the Problem] The adsorption stage of the present invention, which is completed to solve the above problem, comprises a base formed of a porous plate and a base portion on which a substrate is placed on the surface of 201218308, and is formed inside: The base body of the hollow space, the vacuum exhaust mechanism of the back pressure reduction of the ==; the back side of the stage:: the inlet member covers and forms on the portion of the sealing member; (4) the leak becomes the decompressed state Then, the leak hole is generated through the porous plate, [Effect of the invention]: According to the present invention, if vacuum is evacuated to the hollow space, i becomes a hole: a defect formed in a part of the sealing member The hole leaks through multiple births. Since the portion other than the line leakage hole is blocked by the sealing member, as in the past, the entire surface of the porous plate (the entire surface of the stage) is generated by @漏', but is generated from the leakage hole toward the upper portion thereof. . As a result, the state (aerodynamic state) of the leak in the porous plate is changed to π' and the magnitude or distribution of the adsorption force is changed, and is obtained by a distribution different from the adsorption stage (for example, see FIG. 9). Adsorption force. Specifically, the region in which the adsorption force is generated is concentrated in the region above the leakage hole. Even if it is a porous plate, the adsorption force can be generated only in the vicinity of the formation of the pore. Here, the leak hole may extend from the sealing member in the depth direction to form the bottom of the leak hole in the porous plate. The right # is formed by deepening the leak hole and forming the bottom of the leak hole in the porous plate, and the amount of leakage increases depending on the surface area of the leak hole formed on the porous plate (the sum of the bottom area and the side area of the hole), and The distribution of the flow of the gas 201218308 in the porous plate also changes, and the adsorption force can be enhanced as compared with the adsorption table of the porous plate in which the sealing member and the leak hole are not provided. Here, the depth of the bottom of the leaking hole is preferably 丨0 〇 / 〜 〜 50% of the thickness of the porous plate. The depth of the leak hole formed on the right side of the porous plate is shallower than this, and although the distribution of the region where the adsorption force is generated is adjusted, the amount of leakage is small and the adsorption force is small. If the depth of the leak hole is deeper than this, the adsorption force acts on substantially the entire upper surface. The amount of leakage also becomes too large. Depending on the type of the substrate, an excessively strong adsorption force may cause an impact on the substrate and cause a bad influence. Therefore, as long as the depth of the bottom of the leak hole is 1% to 5% of the thickness of the porous plate, the adsorption force of the porous plate larger than the pore-forming hole can be obtained, and a moderate adsorption force can be obtained. And become the adsorption stage where the adsorption force is balanced. In the above invention, it is preferable that the leak holes are formed in a plurality of lattices on the back surface of the stage. Thereby, the substrate can be adsorbed substantially uniformly throughout the entire stage. In the above invention, the leak hole may be formed in plural on the back surface of the stage, and the distribution of the leak hole, the number of per hole per hole area, the depth of the leak hole, and the diameter of the leak hole may be changed. It is uneven, so that the adsorption force acts unevenly. By setting the leakage amount to a non-uniform distribution, the adsorption force can also be unevenly applied to the stage. For example, the adsorption force may be changed from the center to the surroundings, or a strong adsorption force may be applied to a part of the stage. [Embodiment] 8 201218308 The following description of the five-layered inner valley of the adsorption of the present invention will be described in detail based on the diagram showing the form of the palladium. ',' and Fig. 1 show a plan view of the adsorption a of the present invention. In the cross-sectional view of the embodiment, the adsorption stage ίο includes a stage body 13 which is mounted on the surface of the stage 13 on which the substrate 11 is placed, and the stage 11 is placed on the stage 11 The manner in which the peripheral abuts is formed by the base 12 supported by the carrier. In the form of sorrow, the 11C below the Zhoumenliang, which is carried by the platform, is held by the base, but it can also be carried out with the two pieces of ^, al ^ ^, 71, as illustrated in Figure 9. The side of the perimeter of the table is broken to support the base. Any one of the guilty 琢 琢 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立 立The member 2 1 is formed with a sealing hole 23 ( 22 ) in a grid-like manner at a predetermined distance, and the details of the T are described below. The stage 11 and the base 12 are provided. In addition to the circumference, the inner portion '4' is formed by processing the lower surface of the stage and the upper surface of the base 12 into a recessed portion, and the hollow space 14 is formed, and the back surface 1 lb of the stage 1 1 (below the inner portion) r surface The hollow space 14 is provided only by processing the concave portion on the side of the stage rail σ U, or may be provided only by processing the concave portion on the side of the base 12 2 . The plug is formed in the plug 15 with a flow path l5a reaching the hollow space u. The soil 15 is further connected to the vacuum pump 17 and the air source 18 via the external flow path 16, and the valve 19 is opened by mistake. The second space 14 is in a decompressed state, and the latter is tested by the valve 30 to return it to the atmospheric pressure. 201218308 The external flow path 16 in the vicinity of the plug 15 is provided with a pressure sensor 31 which can monitor the pressure of the hollow space 14 and can be used as a vacuum switch, that is, whether the threshold can be set in advance to ensure The determination of the substrate holding force required for stably fixing the substrate G. Next, the processing of the back surface 1 lb of the stage 1 1 will be described. Fig. 3 is a view showing the processing procedure of the stage 11 composed of a porous plate. First, as shown in Fig. 3 (a), the surface iu on which the substrate is placed is processed into a flat surface, and a concave portion composed of the rear surface i lb and the lower surface of the peripheral edge is formed on the opposite side. Then, as shown in Fig. 3 (b) As shown in the figure, the sealing member 2 is fixed so as to cover the back surface Ub. Specifically, an epoxy resin serving as an adhesive is applied as a sealing member 2A so as to cover the entire back surface of the stage n. The sealing member 2 is not particularly limited as long as it can block the gas permeability of the porous member. Then, as shown in Fig. 3(e), the sealing member 21 is formed with a leak hole 22. In the present embodiment, Leakage holes 22 are arranged at a constant spacing The entire surface lib is formed in a square lattice shape. Then, as shown in FIG. 3(d), the leak hole 22 is processed in the depth direction toward the stage, and the leak-free hole reaching the inside of the stage 1 1 is formed. 23 (not through). Specifically, the leakage hole 23 of a desired depth is formed by drilling or laser stripping processing. & The preferred depth of the leakage hole formed in the carrier 11 is the thickness t 1 〇%~ 5〇%° For example, 'If the thickness is set to 2. The coffee can be set to a well-balanced adsorption force by setting the pore size to a depth of 2 to 10 mm. That is, it can be confirmed that the substrate having an area of 1% to 30 Å/〇 of the effective adsorption area of the stage 11 is fixed in the field in 201218308. Further, as long as the stage 1 1 ' is not penetrated, the sealing hole 23 may be formed deeper than the depth, and the sealing hole 22 may be formed only through the sealing member 21. The adsorption force is generated by the characteristic distribution, respectively. Further, the preferred aperture of the leaky hole depends on other materials such as the material of the porous plate and the depth of the leaked hole, but it is only required to be 〇 5 mm to 5 mm. 4 to 6 are diagrams schematically showing changes in the adsorption state depending on the depths of the leak holes 22, 23. 4 is an adsorption state when the leakage hole 22 is formed only through the sealing member 2, and FIG. 5 is an adsorption when the leakage hole 23 having a depth of about 5 mm (25% of the plate thickness of 20 mm) is formed on the stage. State, Fig. 6 is an adsorption state when a leak hole having a depth of about 15 mm (75% of a plate thickness of 2 mm) is formed on the stage ii. The aperture is 3 mm. In either of the figures, (a) is a schematic view of a section of the stage 11, and the solid line indicates the range in which the airflow flows. Further, (b) the upper surface 11a of the stage n is not considered, and the areas where the adsorption force is generated are indicated by A, B, and C. In the case where only the vapor leak hole 22 is opened in the sealing member 21, the amount of the steam leakage is limited as shown in Fig. 4, and the adsorption force acts only in the region A near the top of the leakage 22. In this case, for example, it is possible to use a case where a substrate which is very brittle is adsorbed with a weak adsorption force, or the like. When the bottom of the hole reaches the leak hole 23 of the porous plate, as shown in FIG. 5, the adsorption area B becomes quite wide, and the plate thickness of the negative hole is changed at a position near the top of the Na 23 . Therefore, the resistance of the flow becomes smaller, and the adsorption force of 201218308 also increases. In this case, the area of the substrate G can be reliably adsorbed even if it is about 10% to 30% of the effective area S of the carrier :: the thickness of the porous plate is increased by deepening the pores to the bottom of the hole. In the case of a depth of 〇% or more, as shown in Fig. 6, the 'adsorption area ^ is further widened, and is strongly adsorbed on substantially the entire surface of the adsorption effective area of the stage Π. Although the representative embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and may be appropriately modified or changed without departing from the scope of the invention. For example, up to now, Ua is placed on the upper surface Ua of the stage u so that the adsorption force acts in a lattice shape as much as possible, but the distribution of the leakage holes and the leakage holes may be reversed. The number of units per unit area, the depth of the leak hole, and the diameter of the leak hole become uneven, and the adsorption force does not uniformly function. Fig. 7 is an example in which the depth distribution of 23 is set as an uneven sentence. In the present embodiment, the left half portion is referred to as the leak hole 图 illustrated in Fig. 5, and the right half portion is referred to as the leak hole 22 illustrated in Fig. 4. Thereby, the left side of the substrate G can be strongly adsorbed along the scribe line, and the right side can be processed while being weakly adsorbed, and when the external force is applied to the base, it can be avoided by the right side without being excessively applied. The load. Not only can (4) the depth of the leak hole be set to an uneven sentence, but also the aperture can be set to be uneven, and the number of holes can be set to an uneven sentence. Further, even if the distribution of the leak holes and the number of per unit areas of the leak holes are set to be uneven, the same effect can be obtained. In the center and the outside, the leak hole is also formed. In addition, the adsorption force may be changed in the stage u 2012 12308. [Industrial Applicability] The adsorption stage of the present invention can be utilized as a stage for fixing a substrate in a substrate processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an embodiment of a suction stage of the present invention. Figure 2 is a plan view of the adsorption stage of Figure 1. Fig. 3 is a flow chart showing the processing sequence of the stage used in the adsorption stage of the present invention. Fig. 4 is a view schematically showing the state of adsorption of the stage using the leak hole 22. Fig. 5 is a view schematically showing an adsorption state of the stage when the depth of the leak hole 23 is about 5 mm. Fig. 6 is a view schematically showing an adsorption state of the stage when the depth of the leak hole 23 is set to about 丨5 mm. Fig. 7 is a view showing the state of adsorption of the stage when the depth of the leak hole 23 is changed to the left and right of the stage. Fig. 8 is a cross-sectional view showing an example of a suction stage of a type in which a plurality of adsorption through holes are formed in a metal plate (previous example). Fig. 9 is a cross-sectional view showing an example of a suction stage of a type in which a porous plate is used for the adsorption surface (previous example). Fig. 10 is a view showing a substrate area required for the substrate to be stably fixed by a suction table of the prior type of 9001 (previous example). 13 201218308
【主要元件符號說明】 G P 、 31 、 61 10 、 50 、 70 1 1、5 1、7 1 11a' 5 la > 71a llb> 51b 1lc 、 71b 12、52 13 14 ' 54 15 ' 55 15a、 55a 1 6、5 6 17 ' 57 18 ' 58 19 、 30 、 59 、 60 21 22 > 23 53 基板 壓力感測器 吸附台 載台（多孔質板） 上面 背面 下面 底座 載台本體 中空空間 插塞 流路 外部流路 真空泵（真空排氣機構） 空氣源 閥 密封構件 洩漏孔（密封孔） 貫通孔 14[Description of main component symbols] GP, 31, 61 10, 50, 70 1 1 , 5 1 , 7 1 11a' 5 la > 71a llb> 51b 1lc , 71b 12, 52 13 14 ' 54 15 ' 55 15a, 55a 1 6、5 6 17 ' 57 18 ' 58 19 , 30 , 59 , 60 21 22 > 23 53 Substrate pressure sensor adsorption stage (porous board) Above the back side of the base stage body hollow space plug flow External flow path vacuum pump (vacuum exhaust mechanism) Air source valve sealing member leakage hole (sealed hole) through hole 14