201224196 六、發明說明： 【發明所屬之技術領域】 一扁 本發明關於中請專利範圍獨立項的引文的 平基材作電漿處理的裝置與方法。 種用於將 【先前技術】 2 Ο心其中電漿在-介電極和—個「對立電極」之間 ，所要處理的基材放入到該電極和對立電極之間。經 由(它整合到電極中）將反應氣料到電極和 立電極之間，其中氣體分配器有-氣體出口板，它具多數 氣體出口開口’俾能將反應氣體均句地施到要處理的基材 表面的區域’為了確保應用之鍍覆有足夠的均勻性(例用於 製造光電池式非晶質或微結晶的矽層的領域用途），重要的 一點為即使基材面積很大（例如大於丨平方米）在作電漿處 理時，基材表面很電極間的距離也能保持恆定，而誤差报 小.例如1 0毫米±1毫米。為了例如在鍍覆基材時，確保沿 屬生長方向的鍍覆參數均勻，故在鍍覆時，對於夠久的時. 間區間’基材須保持在儘量恆定的溫度，因為層性質和錄 覆溫度有關。 為了如基本上所想要的達到高鍍覆速率，故需要高電 黎·功率’這點令在鍍覆程序時使溫度大大提高。在電漿處 理時溫度升高’會使基材彎曲。如此特別是在基材表面和 電極間距離很小時，會使電漿覆層厚度不均，因此造成不 201224196 均勻’ ^在電渡處理時使基材破為了解決這種問題，了 123339 A已提議使用一受冷卻的電極，藉此特別是P 面積的基材的變形及一電漿化學蒸鍍程序可控制。 【發明内容】 本發明的目的在使電漿處理的基材表面有較佳品質。 此目的係利用申請專利範圍獨立項的特點達成:有利 的進一步特點見於申請專利範圍附屬項。 1 依本發明提供-種用☆將扁平基材作電聚處理的方 法，其中該基材設在-電極和一平坦倚靠面之間，該倚土 面和-個對立電極相關，且該基材的前側朝向該電極：： 後側朝向該充電面，該方法包括： ——將基材保持在充電面上； 藉著將基材的 ，沿電極方向 倚靠面相隔一 在基材中藉熱產生一股機械應力， 刖側及/或後側加溫，使基材產生一種拱曲 看，此拱曲係凹下者，且基材的邊緣側和該 距離； 利用壓低保持器將該邊緣側施局部力量，传甚 材的後側平坦地倚靠在該倚靠面上； 當 形 頻 然 電 ――利用一高頻電壓激發出電漿放電。 該扁平的基材宜由玻璃、金屬、塑膠或陶兗材料構成。 本發明也可包含任何方式預處理的基材。典型的情 :極和對立電極形成一平行板反應器的板。所用之高 係為頻率成分在i百萬赫及細百萬赫之間範圍的 201224196 交流電壓，它施到電極和對立電極。以下所稱之對立電極 係為和扁平基材在電漿處理時不受電漿作用的那一側相關 的那個電極，此處無關於此電極是否為一般接地的那個電 極。平均溫度係指在至少60秒的時間區間在該面上所求的 溫度的算術平均值。 依本發明將基材後側面的溫度調整成比基材前側面 高，可控制電漿處理時基材的拱曲（W51bung)，目為作用到 基材前側及後側的總功率可保持相同或近乎相同。在調前 側面及後側面的溫度時考慮到： 作用到前側面上的功率係由在電漿處理時電極的熱輻 射功率和電黎功率決定，而作用到後側面上的功率係僅由 基材與在對立電極區域中的調溫手段的熱輕合決定。在 此’在後側面上吸收的功率主要只和調溫手段的熱輕射功 率以及利用後側面與調溫手段間的區域中用流體作的熱耦 合有關。要達成高程序穩定性，如果功率的吸收或調溫手 段的溫度作調節，則甚有利。 田基材中的預應力可藉調整基材前側面和後側面上的不 同/皿度而達成’因為如此基材前側面比後側面沿側向膨脹 的程度小’這點在基材後側面的溫度比前側面更高時，可 使基材（從電極方向看）造成凹形棋典，（如果不利用相關措 施作抗衡的連）。如此，基材的邊緣側距倚靠面的距離比該 接近基材中〜的區域更大。如果對基材的邊緣側施力，則 此邊緣側向倚靠而垃 接近。依本發明，對邊緣側施力以產生 —力里’使基材的後側向倚靠面附著’其中這點使基材平 201224196 =地倚靠在倚靠面上’且基材中由熱產生的預應力提高了 麼住倚靠面的壓迫力量。 發月基材固疋作用係在邊緣側的區域達成，基 區域保持在倚靠面上，其中宜使用與基材邊緣側相 、堅低保持器’利用它將基材邊緣壓低。如此一方面可 確保該基材不會彎曲，另方面可確保，在基材與倚靠面之 有良好的導熱性及機械性的接觸。在另—實施例中，在 利用局部力量將邊緣側施力後，利用至少一壓低保持器讓 基材側向料，以使基材所受之機械負荷（特別是由作用在 邊緣側之夾緊力量引起者）保持很小且避免在電漿處理時， 基材破裂。 ，在本發明另—實施例’藉調溫所用之調溫手段調整成 一溫度差 Trs-Tvs，其中 3 〇〇κ>1^·Τν5>〇 5〇κ，其中 l 為 基材之後側面的平均溫度，Tvs為基材之前側面的平均5溫 度此處平均溫度」係指在基材的後側面或前側面的至 少80%所得之算術平均值。顯然，溫度差Li也可調整 成:.〇〇K、丨八、2.〇°K、2.5°K、3.〇〇K或更多，且所選設 的溫度差Trs-Tvs和基材的材料、厚度、側向膨脹及其破壞 強度和其他參數有關，這些參數可由行家直接求出。溫度 差選設成使該由熱產生的機械預應力將基材平平均向倚靠 面壓:L而不會在電漿處理時使基材破裂。對於典型基材 在尺寸1平方米的光電池的用途，溫度差宜為 Trs-Tvs> 0·5οΚ。 如果電裝處理在一溫度Trs (在20t〜300t間，且宜 8 201224196 3〇〇°C 間，且宜 100。(：） ’而且，舉例而言，微 120°C)及/ 或一溫度 Tvs (在 2(Γ(> 達成’則基材的熱負荷可保持很小 結晶矽和非品質石夕都可在—道PECVD料析出。此外，如 果電聚處理在-溫度TG (在2(rc〜3⑻。C間）及/或一溫度 Τε (在2〇°c〜 300。⑶，且冑1〇〇。〇進行，則基材之前側面 或後側面可調整成-有利溫度，特別是溫度差3fK>201224196 VI. Description of the invention: [Technical field to which the invention pertains] A flat apparatus and method for plasma processing of a flat substrate of a citation of an independent item of the patent application scope. The prior art is used to place a plasma between a dielectric electrode and an "opposing electrode", and a substrate to be processed is placed between the electrode and the opposite electrode. The reaction gas is passed between the electrode and the vertical electrode via (which is integrated into the electrode), wherein the gas distributor has a gas outlet plate having a plurality of gas outlet openings '俾 capable of uniformly applying the reaction gas to the treatment to be processed The area of the surface of the substrate 'In order to ensure sufficient uniformity of plating for application (for example, for the purpose of manufacturing a photovoltaic-type amorphous or microcrystalline germanium layer), it is important that even if the substrate area is large (for example When the plasma treatment is performed, the distance between the electrodes on the surface of the substrate can be kept constant, and the error is small, for example, 10 mm ± 1 mm. In order to ensure uniform plating parameters along the growth direction of the substrate, for example, in the case of plating, for a long time interval, the substrate must be kept at a temperature as constant as possible because of the nature of the layer. Covered by temperature. In order to achieve a high plating rate as basically desired, high power is required, which greatly increases the temperature during the plating process. The temperature rise during the plasma treatment will cause the substrate to bend. So especially when the distance between the surface of the substrate and the electrode is very small, the thickness of the plasma coating will be uneven, so it will not be uniform at 201224196. ^The substrate is broken during the electric treatment to solve this problem. 123339 A has It is proposed to use a cooled electrode, whereby the deformation of the substrate, in particular the P area, and a plasma chemical vapor deposition procedure are controllable. SUMMARY OF THE INVENTION The object of the present invention is to provide a preferred quality of the surface of a plasma treated substrate. This objective is achieved by taking advantage of the characteristics of the independent scope of the patent application: advantageous further features are found in the subsidiary scope of the patent application. 1 Provided by the present invention - a method for electropolymerizing a flat substrate, wherein the substrate is disposed between an electrode and a flat abutment surface, the land surface being associated with an opposite electrode, and the substrate The front side of the material faces the electrode: the rear side faces the charging surface, the method comprises: - holding the substrate on the charging surface; by borrowing the substrate, the substrate is separated by a heat in the substrate Producing a mechanical stress, heating the side and/or the back side, causing the substrate to produce a curved view, the arch is concave, and the edge side of the substrate and the distance; the edge is lowered by the depression holder The lateral force is applied laterally, and the back side of the material is flatly rested on the resting surface; when the shape is frequent, a high-frequency voltage is used to excite the plasma discharge. The flat substrate is preferably composed of a glass, metal, plastic or ceramic material. The invention may also comprise a substrate that has been pretreated in any manner. Typically: the pole and counter electrode form a parallel plate reactor plate. The highest used is the 201224196 AC voltage with a frequency component between i-millihertz and fine megahertz, applied to the electrodes and the opposite electrode. The counter electrode referred to hereinafter is the one associated with the side of the flat substrate which is not subjected to the plasma action during the plasma treatment, irrespective of whether the electrode is the one which is generally grounded. The average temperature is the arithmetic mean of the temperatures sought on the face over a time interval of at least 60 seconds. According to the invention, the temperature of the back side of the substrate is adjusted to be higher than the front side of the substrate, and the warpage of the substrate during the plasma treatment can be controlled, and the total power applied to the front side and the back side of the substrate can be kept the same. Or nearly the same. When adjusting the temperature of the front side and the rear side, the power applied to the front side is determined by the thermal radiation power of the electrode during the plasma treatment and the power of the electric power, and the power applied to the rear side is only based on The material is determined by the thermal coupling between the material and the temperature control means in the opposite electrode region. The power absorbed on the rear side is mainly related only to the thermal light-emitting power of the temperature regulating means and the thermal coupling with the fluid in the region between the rear side and the temperature regulating means. To achieve high program stability, it is advantageous if the power absorption or temperature adjustment is adjusted. The pre-stress in the substrate can be achieved by adjusting the different / degree of the front side and the back side of the substrate. 'Because the front side of the substrate is less laterally expanded than the back side, the temperature on the back side of the substrate. Higher than the front side, the substrate (as seen from the direction of the electrode) can be made to be concave (if the relevant measures are not used to counter the connection). Thus, the edge of the substrate is spaced from the abutment surface by a greater distance than the region of the substrate. If a force is applied to the edge side of the substrate, the edge leans sideways and approaches. According to the invention, the edge side is biased to create a force-"attachment of the rear side of the substrate to the abutment surface", wherein this causes the substrate to flatten against the resting surface in the case of '201224196' and the heat generated in the substrate Prestressing increases the oppressive force of the reclining surface. The lumber substrate solidification is achieved in the region on the edge side, and the base region is held on the abutment surface, wherein it is preferred to use a low-retainer with the edge of the substrate to lower the edge of the substrate. On the one hand, it ensures that the substrate does not bend, and on the other hand ensures good thermal and mechanical contact between the substrate and the resting surface. In another embodiment, after applying the local force to the edge side, the substrate is laterally stocked by at least one depression holder to subject the substrate to mechanical load (especially by the clip acting on the edge side). The tightening force is kept small and avoids cracking of the substrate during plasma processing. In another embodiment of the present invention, the temperature adjustment method used for temperature adjustment is adjusted to a temperature difference Trs-Tvs, wherein 3 〇〇κ>1^·Τ55>〇5〇κ, where l is the average of the back side of the substrate Temperature, Tvs is the average 5 temperature of the front side of the substrate. The average temperature here refers to the arithmetic mean of at least 80% of the resulting back or front side of the substrate. Obviously, the temperature difference Li can also be adjusted to: 〇〇K, 丨8, 2.〇°K, 2.5°K, 3.〇〇K or more, and the selected temperature difference Trs-Tvs and the substrate The material, thickness, lateral expansion and its failure strength are related to other parameters, which can be directly determined by the expert. The temperature difference is selected such that the mechanical pre-stress generated by the heat flattens the substrate toward the resting surface: L without rupturing the substrate during the plasma treatment. For typical substrates, the temperature difference should be Trs-Tvs> 0·5οΚ in the case of a 1 m2 photocell. If the electrical equipment is treated at a temperature Trs (between 20t and 300t, and preferably 8 201224196 3〇〇 °C, and preferably 100. (:) 'and, for example, 120 ° C) and / or a temperature Tvs (in 2 (Γ(> achieved') the thermal load of the substrate can be kept small and the non-quality stone can be precipitated in the PECVD material. In addition, if the electropolymerization is at - temperature TG (at 2 (rc~3(8).C) and/or a temperature Τε (in 2〇°c~300.(3), and 胄1〇〇.〇, the front side or the back side of the substrate can be adjusted to a favorable temperature, especially Is the temperature difference 3fK>
Trs-TVS>〇.〇〇K。此處Tgs示對立電極的平均度巾h表示 電極的平均度。 如果倚靠面調溫到2(rc〜3〇{rc間範圍的平均溫度 T A，則基材之後側面（它壓到倚靠面上）可變成一個對應的溫 度。 本發明又—實施例的特點為：在基材的後側面和倚靠 面之間的區域中導人氫氣及/或氦氣，其程序之部分偏壓 j 0.1毫巴〜250毫巴之間。且宜2〇毫巴，如此基材於倚 罪面之間可有高度之熱耦合。 本發明再一實施例的特點為要作電漿處理，在電極和 對立電極激發一高頻功率，該功率在〇丨仟瓦/平方米〜 仟瓦/平方米的範圍。如此可作電漿處理以製造非晶質或 微結晶的N-或P或本態的矽薄層。 在一種用於將扁平基材作 材設在一電極和一平坦倚靠面 電極相關，且該基材的前側朝 電面，該裝置包括·· 電漿處理的裝置，其中該基 之間’該倚靠面和一個對立 向該電極，而後側朝向該充 將基材保持在充電面上的手段； 9 201224196 在基材中藉熱產生一股機械應力的手段，藉著將 基材的前側及，或後側加溫，使基材產生一種拱曲：沿電 極方向看，此拱曲係凹下者，且基材的邊緣側和該倚“ 相隔一距離； ——利用一壓低保持器將該邊緣側施局部力量的手 段’使基材的後側平坦地倚靠在該倚靠面上； 利用一高頻電壓激發出電漿放電的手段。 該保持手段可設計成指狀或框條，特別是保持手段可 彳對立電極呈機械式連接，但同時也可和後者呈電絕緣及 /或熱絕緣。此外，保持手段可設計成壓低保持^，而將 邊緣側施加局部力以使基材的後側面平坦地倚靠在倚靠面 在本發明另一實施例，該至少一壓低保持器設計成可 利用該至少一壓低保持器利用局部力量施加到邊緣器使基 材側向膨脹。為此，該壓低保持器可有一彈簧手段（宜為彈 性者）或設計成在低溫範圍（例如20t)相對於基材側 一間隙。 在本發明又一實施例設有基材的保持手段，在電漿處 理時，將基材對垂直線保持成角度，該角度在3。〜3〇。範圍7 如此由於基材表面可避免被鍍覆時產生的粒子污染，故可 確保層的區質很高，因為這些粒子受到重力從基材表面偏 向離開。 將以下特徵組合： 一一在基材中利用熱產生機械預應力的裝置，這種機 201224196 械預應力係藉著將基材的前側及/或後側調溫而產生，这 種預應力相當於基材的凹形拱曲（從電極的方向看呈凹 形），基材的邊緣側與倚靠面間隔一距離； ——將邊緣側施加局部力量的手段，用於利用壓低保 持器使基材的後側面平平地倚靠在倚靠面； 基材的朝向對垂直線成一角度，在3。〜3〇。範圍之間， 而前側面朝下’如此可防止基材懸空，同時碟保基材^面 爻到鍍覆時產生之粒子污染，可確保該的層品質。 利用設在對立電極區域中的調溫手段，在作電漿處理 時，基材的後側面至少80%可加熱到比基材前側面更高的 平均溫度。 立電極區域中的調溫手段時 特別是電極和對立電極的面 高頻功率、基材及其前側面 當然’在設計該設立在對 要考慮電漿處理的不同參數， 積、施到電極和對立電極上的 的總功率吸收量]于家習用的方法，例如實驗方法、作模 擬及/或理論的計算可以考慮。調溫手段之本發明設計 可使得在電栽處理時基材的拱曲能控制，如上述。 本發明再-實施例的特點為：調溫手段的調溫功率設 計成用熱方式在基材中產生一機械預應力，此預應力相當 於基材的一凹形拱曲（由電極方向看呈凹形” 設計，在基材後側面 與 差，它可由行家用 本發明另一實施例 在這種調溫手段的調溫功率的 基材前側面之間須確保某種最起碼的溫 實驗、作模擬及/或用理論計算測定。 的特徵為設有施力手段 以將基材的邊緣側施力，以產生 201224196 一股量，將基材以其後侧面頂 材可準確定位，且即使基材面 極面間可保持大致相同的間隔 倚靠面上。 住倚靠面而保持住。其中基 積很大，在基材前側面與電 ，因為基材係平平均倚靠在 利用另外設在電極區域中的* 可將基材的總吸收功率準：广手段，在電裂處理時 =又一實施例的特點為：利用設在對立電 可將倚靠面調溫。如此可用特別簡單的方式 將熱功率經基材的後側面麵入基材中。如不用此方式(或除 了这種方式同時另外）也可利用設在電極區域中的調溫手段 將-設在電極和對立電極之間的氣體分配器調溫。如此可 ::在基材前側上基材對熱功率的吸收，且氣體分配器對 與熱有關的變形有高度穩定性。 、調溫手段宜設有通道，一種調溫液（宜為油性流體）可流 :該通舉例而f ’調溫手段與電極及/或對立電極配 合’且宜受控制或受調節地操作’例如利用循環的調溫液。 在此且使用熱載體油’舉例而言。它係、係利用位於程序室 外的滾動值溫器」保持在悝定溫度。 本發月3實施例的特點為該調溫手段的調溫功率設 心藉調溫所用之調溫手段調整成—溫度I Ί，其中 > Trs Tvs> 〇·5〇κ，其中Trs為基材之後側面的平均溫 度’ TvS為基材之前側面的平均溫度。 在本發明又一實施例中該調溫手段的調溫功率設計成 使3玄電漿處理在—2Gt〜·。c間的溫度及/或在抓 12 201224196 〜300 C之間的溫度Tvs及/或在2(Γ(：〜3〇〇β(：之間的溫度 TG及/或在20°C〜30(TC之間的溫度Te達成； 其中TG表示對立電極的平均溫度； TE表示電極的平均溫度； 及/或將倚靠面調溫到2〇t〜3〇〇r間的範圍的平均 溫度τΑ。 本發明#一實施例中設有一電功率供應手段，以在電 極和對立電極激發一高頻功率，該功率在01仟瓦/平方米 〜20仟瓦/平方米的範圍。 本發明另-實施例的特點為：倚靠面具有至少8〇%範 圍的粗趟度心及，或波狀，如此，特別是當氫氣及/或氦 氣導入基材後側面與倚靠面之間的區域中時，特別是 序部分壓力在(U毫巴〜25〇毫巴之間時，在基材和倚；面 之間可達成有效的熱搞合。 以下本發明利用圖式中所示的實施例作說明，由此本 發明的其他特點和優點也可受申請專利範圍影響地看出。 【實施方式】 二丄顯I-一：於處理扁平基材(2)的裝置〔設計成反應 反"(;二不思圖。反應器可特別設計卿反應器。 ^ 包含—程序室（3)，具有—電極⑷和-個對立電極 #覆：雷生一電漿，藉之可將一基材⑺的表面處理(特別是 Γ雷⑷和對立電極(5)設計成大面積金屬板，且可： 到—電厂1源(圖1未示)，且宜為-高頻供電源，其激發頻； 13 201224196 在1什赫〜200百萬赫之間，1宜13.56百萬赫，特別是可 將一咼頻功率(在°·1仟瓦/平方米〜20仟瓦/平方米之間) 施到電極（4)和對立電極（5)。基材（2)宜如Ερ 2 ΐ47々η μ 所述。在電漿處理時，對垂直線成3。〜3()。範圍的角度，而 要鍍覆的那個表面（前側面）向下朝向，保持在對立電極上。 反應器⑴設計成用於處理大面積扁平基材（例如面積】 平方米或更大）。特別是該反應器⑴特別適合用在製造高效 率薄層太陽電池模組時作加工步驟，例如用於非晶質或微 結晶石夕薄層太陽電池。 如圖1所不’該二電極⑷⑺形成程序室⑺的二個對立 的壁’程序室(3)設在一真空室⑺〔它具有一可抽空的殼體 W’該殼體有一開口⑽以讓基材放入及排出，室的開口⑽ 可利用—關閉裝置（9)關閉成密不漏真空的方式。為了要將 真空室⑺對外室（12)密封。設有密封件⑴）。在此密封件宜 由抗氟材料形成，真空室⑺可具任意空間形狀，且可特別 具有圓形或長方形橫截面。埋人真空室⑺中的程序室⑺可 特別具有一爲平圓柱盤或一扁平四方形的形狀。當然，本 發明也可用於其他設計的反應器，特別是具有其他程序室 及/或電極幾何性質者。同樣地，當然本 例t程序本身為一真空室。 一實施 電極⑷設在真空室⑺中的一保持構造⑼中，在圖丄 的實施例中，該真空室之保持構造由殼體後壁⑽形成。為 此’電極⑷設在殼體後壁⑽的一凹隙（38)中且利用一種八 電質（20)與殼體後壁（19)隔開。 201224196 如圖1所不，在作處理時，對立電極⑺蓋住保持構造 (3 7)的凹隙（3 8)的方式使得對立電極⑺的邊緣區域（23)與凹 隙(曰38)的-邊緣區域（24)間形成一縫隙（25)。縫隙⑼寬度的 度里級約1毫米’縫隙寬度設計成使得—方面在作處理時， 電漿可保持在程序室（3)内部，但另一方面，在程序室⑺和 真空室⑺的其餘内空間之間不會有太大的壓力降。 要將基材鑛覆、改質或姓刻，將-反應氣體（它可且有 η推雜或P推部的作用）導入程序室⑺。為此，將反應氣體 由一來源經一「供應通道」〇3)送到-氣體分配器(15)，反 應氣體由氣體分配器流入程序室(3)。在此實施例，氣體分 =室⑽包含_氣體室（16)，它在朝向對立電極⑺的那一側 设有一氣體出口板a _ ( }該板5又有多數氣體出口開口（圖未 不)以使氣體通過。在氣體出口板〇7)的一個約ι〇平方米〜 2.〇平方米的面積上，典型的情形設有數千個出口開口。 在圖1裝置中’在電聚處理時，基材係設在一特別之 平坦的基材的倚靠面(5a”倚靠面(5a)宜整合到對立電極⑺ 中例如一個金屬面，基材在電聚處理時倚靠在該金屬面 j。在此’特別是利用基材將基材的倚#面⑽蓋住，因此 :在電衆處理時不會受污染，特別是利用基材⑺蓋住，使 ，在電i：處理時’可防止在基材的倚靠面⑽上形成殘渣 ⑽ckstand)。在—與圖1不同設計之本發明實施例，對立 電極（5)並沒有端區域（23)空出氣體淋浴（Gasd應he)的區 域’或即使有也只略穿屮辞阿以 士“ 略大出Μ域之外。要在-基材〔它設 -罪面（5a)上〕和倚罪面（5a)之間達成儘量高的熱编合， 15 201224196 要形成它的粗糙度，係設有一種最佳適當的粗糙度值1及 最佳適當的波狀。 反應器有調溫手段，設在對立電極區域，藉之在電漿 處理時，可將基材的後側面至少8〇%熱到比基材前側面更 高的平均溫度。 因此依本發明，在反應器（1)中設有調溫手段 (27)(29)(3G)’利用這些調溫手段在電漿處理時，可控制或 調節送到對立電極（5)及/或倚靠面⑽的能量。 在此，調溫手段（27)(29)(30)調溫功率設計成在基材中 藉熱產生機械預應力，它造成基材的拱曲〔沿電極⑷ 看呈凹形〕。 λ 1的實施例巾’設有和對立電極（5)相關的調溫手 二匕們包3 一裝置(29)’該裝置設在真空室(7)中對立電極 方：：，且可將倚靠面⑽調溫。如不用此方式(或除了此 另外)也可設有一整合到對立電極⑺或倚靠面 $中的裝置⑽’對立電極（5)，特収倚靠面㈣可用以 二调溫：將一種調溫室經通道(圖未示)在對立電極(5) 或倚在面（5a)中循環。 可利：=:Γ7)也可調溫，如此，氣體出口板(17) 因此氣體出口板(17:㈣條由高導熱性材料構成， 體出π板(⑺可用以下方；2接到電極(4)。電極⑷及氣 中的通道（36)循環 “m溫液利用電極⑷ 是可在氣體出U 調溫作用可控制或調節。特別 板（17)的區域中熱溫度感測器（40,)，其測量 201224196 值用於調節流過電極㈣ 量，=:Γ)(29)或(3。)之所需調溫功率，可作測 、極(4)和對立電極(5)互相朝向的那一側 感測器（40)(4〇，）。刹田lL 】《X有恤度 頻功率、氣體、”求：測器(4°)(4°’)可對不同之高 •作m: 電極(4)和對立電極(5)的局部溫度， 裝功率的函數，根據這種測量，可將瞬間調溫功 佳化二要’還有調溫裝置(27)(29)(30)的幾何形狀〕最 佳化。此外，在電毁處理時，可得到溫度感測器㈣ 於作調溫裝置（27)(29胸的功率之伴隨程 调溫手段（29)(30)〔可能還有調溫手段（27)〕的調溫功 ^計成㈣-溫差Hs>()5〇K’其中L為基材⑺後 側面的平均溫度，❿T”為基材⑺前側面的平均溫度。此 外’調溫手段的高溫功率設計成在12()t；與扇。C的溫度^ 作電漿處理’及/或在2Qt與⑽。c的溫度作電^ 理，及/或在20。(：與30(rc的溫度Tg作電漿處理及/或 在20°c與10(rc的溫度τΕ作電漿處理，其中，Tg 極的平均溫度，Te為電極的平均溫度。當然在設計調溫功 率時，-些參數要用行方式考慮，如電衆功率、電極和對 立電極的距離、或氣體出口板和基材前側面的距離、調溫 手段和基材後側面間的熱耦合、反應氣體、程序氣體、$ 序溫度的預設值等等。 此外該裝置具有施力手段，以將力施到基材（2)邊緣 側，以產生一力量，此量將基材（2)以其後側面頂向倚靠面 17 201224196 (5a)保持住，對立電極(5)之朝向電極(4)的那一側有+裝置 ⑼將基材⑺保持住。裝置（21)(^設計成固定裝置）包含 -個或數㈣健持器（31)，#作料手段，它們可赫基材 (2)邊緣側頂壓到對立電極(5)的表面〔它當作倚靠面；㈣的 作用〕。保持手段可设計成指形或框形，特別是❹手段 可與對立電極（3)呈機械式連接但同時它呈電絕緣或熱絕 緣。 ： 圖2的示意圖顯示經-扁平基材(50)的一剖面圖，基材 (5〇)有一前側（55)、一後側（6〇)及邊緣側（Μ)，它倚靠在一倚 靠面㈣上。其中在前側(55)與後側(6〇)的溫差，在上圖中 dT<〇。而在下圖中dT>〇’且在上圖中從上看形成凸形棋 曲而在下圖形成凹形棋曲（各由上看）。藉著對邊緣制⑽施 力’在此部分圖中可將基材⑽向倚靠面㈣頂壓、 在電漿處理時作以下步驟： 在基材中用熱產生一機械預應用，它造成基成样 曲（由電極方向看呈凹形）；見圖2,下方部分圖；： —將基材邊緣側施力，以產生一股力量將基材用豆 後側面頂向倚靠面保持住。 八 要達到高度熱耦合’將氫氣及/或氦氣導入基材後側 面和倚罪面之間的區域中，其程序壓力在〇ι毫巴：〜㈣毫 τ 舉例而s，倚靠面調至2〇°C〜300°C範圍的平均溫度 :’因A該基材之壓到倚靠面的後側面調到一相丨關溫度。 用此方法，所造之層的側向均勻性為< 1 %。.： 舉例而吕，利用調溫手段調整溫差Trs_Tvs纟m〜 18 201224196 1 0°Κ之間，其中Trs為基材之後側面的平均溫度，Tvs為基 材之前側面的平均溫度。電漿處理特別是12〇<t〜3〇〇。〇之 間的溫度丁以及//或在20t;〜10(rc間的溫度Tvs進行。此 外，電漿處理特別是在20〇C〜300t之間的溫度及/或 在20 C〜300¾間的溫度TE進行。其中Tg為對立電極的平 均溫度’ TE為電極的平均溫度。 【圖式簡單說明】 圖1係經過本發明要清理之用於將基材作電漿處理 裝置的縱剖面圖； 、 圖2係在前側及後側不同溫度的場合的一扁平 面圖。 的剖 【主 要元件符號說 (1) 反應器 (2) 扁平基材 (3) 程序室 (4) 電極 (5) 對立電極 (5a) 倚靠面 ⑺ 真空室 (8) 殼體 (9) 關閉裝置 (10) 開口 19 201224196 (12) 外室 (13) 供應通道 (15) 氣體分配器 (16) 氣體室 (17) 氣體出口板 (19) 殼體後壁 (20) 介電質 (21) 保持裝置 (23) 〔對立電極（5)的〕邊緣區域 (24) 〔凹隙（38)的〕邊緣區域 (25) 縫隙 (27) 調溫手段 (29) 調溫手段 (30) 調溫手段 (31) 壓低保持器 (35) 框條 (36) 通道 (37) 保持構造 (38) 凹隙 (40) 溫度感測器 (40’） 溫度感測器 (50) 扁平基材 (55) 〔扁平基材（50)的〕前側 (60) 〔扁平基材（50)的〕後側 20 201224196 (65) 〔扁平基材（50)的〕邊緣側 TE 電極平均溫度 TG 對立電極平均溫度Trs-TVS>〇.〇〇K. Here, Tgs shows the average of the opposite electrodes, h indicates the average of the electrodes. If the resting surface is tempered to an average temperature TA of 2 (rc~3〇{rc, the back side of the substrate (which is pressed against the resting surface) can become a corresponding temperature. The invention is further characterized by : introducing hydrogen and/or helium in the region between the back side of the substrate and the resting surface, the partial bias of the program is between 0.1 mbar and 250 mbar, and preferably 2 mbar. There is a high degree of thermal coupling between the materials of the sin. The further embodiment of the invention is characterized in that it is subjected to a plasma treatment to excite a high frequency power at the electrodes and the opposite electrodes, the power being in the watts/square meter. ~ 仟 / / square meter range. This can be treated as a plasma to produce an amorphous or microcrystalline N- or P or a thin layer of bismuth. In a method for laying flat substrates on an electrode and a flat reclining electrode associated with the front side of the substrate facing the electrical surface, the apparatus comprising: a plasma processing apparatus, wherein the base between the base and the opposite side of the electrode, the rear side facing the charge Means for holding the substrate on the charging surface; 9 201224196 Producing heat from the substrate A means of mechanical stress, by heating the front side and/or the back side of the substrate, to cause the substrate to have a curvature: as viewed in the direction of the electrode, the arch is recessed, and the edge side of the substrate The reliance "is separated by a distance; - the means for applying a partial force to the edge side by means of a depression holder" causes the rear side of the substrate to rest flat against the resting surface; using a high frequency voltage to excite the plasma discharge The retaining means can be designed as a finger or a frame strip, in particular, the retaining means can be mechanically connected to the opposite electrode, but can also be electrically and/or thermally insulated from the latter. In addition, the retaining means can be designed to be depressed. Holding a local force to apply a local force on the edge side to flatly rest the back side of the substrate against the resting surface. In another embodiment of the invention, the at least one depression retainer is designed to utilize the local force with the at least one depression retainer Application to the edger causes the substrate to expand laterally. To this end, the depression holder can have a spring means (preferably elastic) or be designed to have a gap relative to the substrate side in the low temperature range (eg 20t). In another embodiment, a holding means for the substrate is provided. When the plasma is processed, the substrate is held at an angle to the vertical line at an angle of 3. 3 to 3. The range 7 is such that the surface of the substrate can be prevented from being plated. The particle contamination produced during the process ensures that the layer is of high quality because the particles are deflected away from the surface of the substrate by gravity. The following features are combined: a device that uses mechanical heat to generate mechanical pre-stress in the substrate. Machine 201224196 Mechanical prestressing is produced by tempering the front side and/or the back side of the substrate. This pre-stress corresponds to the concave curvature of the substrate (concave from the direction of the electrode), the substrate The edge side is spaced from the resting surface by a distance; - a means of applying a local force to the edge side for lowering the back side of the substrate against the resting surface by means of a depression holder; the orientation of the substrate is at an angle to the vertical line, 3. ~3〇. Between the ranges, and the front side facing down, this prevents the substrate from being suspended, and at the same time, the surface of the substrate is protected against particle contamination caused by plating, which ensures the quality of the layer. With the temperature regulation means provided in the opposite electrode region, at least 80% of the rear side of the substrate can be heated to a higher average temperature than the front side of the substrate during the plasma treatment. The tempering means in the vertical electrode region, in particular the surface high frequency power of the electrodes and the opposite electrodes, the substrate and its front side are of course set in the design of the different parameters to be considered for plasma treatment, product, application to the electrode and The total amount of power absorbed on the counter electrode is a customary method, such as experimental methods, simulations, and/or theoretical calculations. The design of the present invention for temperature regulation means that the curvature of the substrate can be controlled during the electromachining process, as described above. A further embodiment of the invention is characterized in that the temperature control power of the temperature control means is designed to thermally generate a mechanical prestress in the substrate, the prestress being equivalent to a concave curvature of the substrate (viewed by the direction of the electrode The design is concave, and the back side of the substrate is poor. It can be ensured that some minimum temperature test can be ensured between the front side of the substrate of the temperature control power of the temperature control means according to another embodiment of the invention. , by simulation and/or by theoretical calculations, characterized by applying a force to apply force to the edge side of the substrate to produce a 201224196 amount, which can accurately position the substrate with its rear side top material, and Even if the surface faces of the substrate can be kept at substantially the same distance on the abutment surface, the surface is held by the abutment surface. The base product is large, and the front side of the substrate is electrically connected, because the substrate is evenly placed on the substrate. The * in the electrode area can be used to estimate the total absorption power of the substrate: a wide range of means, in the case of electrolytic cracking = another embodiment is characterized by the use of the opposite pole to adjust the temperature of the leaning surface. This can be used in a particularly simple manner. Passing thermal power through the substrate The rear side faces into the substrate. If this is not the case (or in addition to this), the gas distributor disposed between the electrode and the counter electrode can be tempered by means of a temperature-regulating means provided in the electrode region. This can be: the absorption of thermal power by the substrate on the front side of the substrate, and the gas distributor is highly stable to heat-related deformation. The temperature adjustment means should be provided with a channel, a temperature-regulating liquid (preferably an oily fluid) Flowable: This example is exemplified and the 'temperature control means cooperates with the electrode and/or the counter electrode' and is preferably controlled or regulated to operate 'for example with a circulating temperature control liquid. Here and using a heat carrier oil' The system is maintained at a set temperature by using a rolling temperature controller located outside the program. The characteristics of the embodiment of the present month are that the temperature adjustment power of the temperature adjustment means is adjusted by the temperature adjustment means used for temperature adjustment. - Temperature I Ί, where > Trs Tvs> 〇·5〇κ, where Trs is the average temperature of the side after the substrate 'TvS is the average temperature of the front side of the substrate. In another embodiment of the invention, the temperature is adjusted. The tempering power of the means is designed to make 3 The mysterious plasma is treated at a temperature between -2Gt~·c and/or at a temperature between 12201224196~300C Tvs and/or at 2(Γ(:~3〇〇β(:temperature TG) And/or at 20 ° C ~ 30 (temperature Te between TC reached; where TG represents the average temperature of the opposite electrode; TE represents the average temperature of the electrode; and / or the temperature of the leaning surface to 2 〇 t ~ 3 〇〇 The average temperature τΑ of the range between r. In one embodiment, an electric power supply means is provided to excite a high frequency power at the electrode and the opposite electrode, the power being at 01 watts/square meter to 20 watts/square meter. The scope of the present invention is characterized in that the resting surface has a rough center of at least 8 〇% and or wavy, thus, especially when hydrogen and/or helium are introduced into the substrate, the side and the back In the region between the faces, especially when the pressure of the sequence portion is between (U mbar ~ 25 mbar), an effective heat bonding can be achieved between the substrate and the lining; The invention is described below with reference to the embodiments shown in the drawings, and thus other features and advantages of the invention may be [Embodiment] Dioxin I-I: a device for treating a flat substrate (2) [designed as a reaction anti-" (2) The reactor can be specially designed for the reactor. ^ Including - program room ( 3), having - electrode (4) and - opposite electrode #: Rason-plasma, by which the surface treatment of a substrate (7) (especially the thunder (4) and the counter electrode (5) are designed into a large-area metal plate And can: to - power plant 1 source (not shown in Figure 1), and should be - high frequency power supply, its excitation frequency; 13 201224196 between 1 Shih ~ 200 million Hz, 1 should be 13.56 million Hz In particular, a frequency power (between °·1 watts/square meter to 20 watts/square meter) can be applied to the electrode (4) and the opposite electrode (5). The substrate (2) should be as Ερ 2 ΐ47々η μ. In the plasma treatment, the vertical line is 3. 3 (). The angle of the range, while the surface to be plated (front side) is oriented downward, and is held on the opposite electrode. The reactor (1) is designed to handle large area flat substrates (e.g., square meters or larger). In particular, the reactor (1) is particularly suitable for use in the manufacture of high efficiency thin layer solar cells. The module is used as a processing step, for example, for an amorphous or microcrystalline Shihwa thin-film solar cell. As shown in Fig. 1, the two electrodes (4) (7) form two opposite walls of the program chamber (7). In a vacuum chamber (7) [which has an evacuatable housing W' which has an opening (10) for the substrate to be placed and discharged, the opening (10) of the chamber can be closed by means of a closing device (9). In order to seal the vacuum chamber (7) to the outer chamber (12), a sealing member (1) is provided. The sealing member is preferably formed of a fluorine-resistant material, and the vacuum chamber (7) can have any spatial shape and can have a circular or rectangular shape. The program chamber (7) in the buried vacuum chamber (7) may have a shape of a flat cylindrical disk or a flat square. Of course, the invention can also be applied to reactors of other designs, in particular with other programs and/or Or the geometrical nature of the electrode. Similarly, the procedure of this example is itself a vacuum chamber. An implementation electrode (4) is provided in a holding structure (9) in the vacuum chamber (7), in the embodiment of the figure, the vacuum chamber is maintained Constructed by the rear wall (10) of the housing For this purpose, the 'electrode (4) is placed in a recess (38) of the rear wall (10) of the housing and is separated from the rear wall (19) of the housing by an eight-electrode (20). 201224196 For processing, the opposing electrode (7) covers the recess (38) of the holding structure (37) such that an edge region (23) of the counter electrode (7) and an edge region (24) of the recess (曰38) are formed. a slit (25). The width of the slit (9) is about 1 mm in length. The slit width is designed such that the plasma can be kept inside the program chamber (3) while being processed, but on the other hand, in the program chamber (7) There is not much pressure drop between the remaining inner space of the vacuum chamber (7). To mineralize, modify or surname the substrate, the reaction gas (which can have a η push or P push) ) Import the program room (7). To this end, the reaction gas is supplied from a source to a gas distributor (15) via a "supply passage" 〇 3), and the reaction gas flows from the gas distributor into the program chamber (3). In this embodiment, the gas sub-chamber (10) comprises a gas chamber (16) which is provided with a gas outlet plate a_ on the side facing the counter electrode (7). The plate 5 has a plurality of gas outlet openings (Fig. In order to pass the gas. On the area of the gas outlet plate 7) of about 〇 square meters to 2. square meters, thousands of outlet openings are typically provided. In the apparatus of Fig. 1, in the electropolymerization process, the substrate is provided on a resting surface (5a) of the particularly flat substrate (5a), and the substrate (5a) is preferably integrated into the counter electrode (7), for example, a metal surface, and the substrate is The electropolymerization process relies on the metal surface j. Here, the substrate is covered with the substrate (10), so that it is not contaminated during the electricity treatment, especially by the substrate (7). Therefore, it is possible to prevent the formation of residue (10) on the abutment surface (10) of the substrate during the processing of the electricity i: In the embodiment of the invention which is different from that of Fig. 1, the opposite electrode (5) has no end region (23) The area where the gas shower (Gasd should be) is vacated or even if it is only slightly swearing, the Aegis "slightly out of the field." To achieve the highest possible heat-bonding between the substrate (which is set on the surface of the sin (5a)) and the surface of the sin (5a), 15 201224196 to form its roughness, it is optimally appropriate Roughness value 1 and optimum proper wave shape. The reactor has a temperature-regulating means disposed in the opposite electrode region whereby at least 8% of the back side of the substrate is heated to a higher average temperature than the front side of the substrate during the plasma treatment. Therefore, according to the present invention, a temperature regulating means (27) (29) (3G) is provided in the reactor (1). These plasma regulating means can be controlled or adjusted to be sent to the opposite electrode (5) during the plasma processing. / or rely on the energy of the face (10). Here, the temperature regulating means (27) (29) (30) tempering power is designed to generate mechanical prestressing by heat in the substrate, which causes the substrate to be warped [concave along the electrode (4)]. The embodiment of λ 1 is provided with a thermostat hand 2 associated with the counter electrode (5). A device (29) is disposed in the vacuum chamber (7) opposite the electrode side::, and Adjust the temperature on the face (10). If this method is not used (or in addition to this), a device (10) 'opposite electrode (5) integrated into the counter electrode (7) or the reclining surface $ can be provided, and the special receiving surface (4) can be used to adjust the temperature: The channel (not shown) circulates in the opposite electrode (5) or against the face (5a). Kelly: =: Γ 7) also adjustable temperature, so, the gas outlet plate (17) Therefore, the gas outlet plate (17: (four) strip is composed of a highly thermally conductive material, the body π plate ((7) can be used as follows; 2 connected to the electrode (4) The electrode (4) and the passage (36) in the gas circulation "m warm liquid utilization electrode (4) is a temperature temperature sensor that can be controlled or adjusted in the gas out U temperature adjustment function. Special plate (17) 40,), its measured 201224196 value is used to adjust the amount of temperature required to flow through the electrode (four), =: Γ) (29) or (3.), can be measured, pole (4) and opposite electrode (5) The sensor (40) (4〇,) that faces each other. Brake lL 】 "X-shirt with frequency power, gas,": detector (4 °) (4 ° ') can be different High • m: the local temperature of the electrode (4) and the opposite electrode (5), as a function of the installed power, according to this measurement, the instantaneous temperature adjustment can be improved to the second and the temperature adjustment device (27) (29) ( 30) The geometry is optimized. In addition, in the case of electrical destruction, a temperature sensor can be obtained (4) as a temperature regulating device (27) (29 chest power is accompanied by temperature adjustment means (29) (30) [may have thermostats (27)] Temperature power meter (4) - temperature difference Hs> () 5 〇 K' where L is the average temperature of the back side of the substrate (7), ❿T" is the average temperature of the front side of the substrate (7). In addition, the high temperature power of the 'tempering means is designed At 12()t; with the temperature of the fan. C is treated as a plasma treatment' and/or at a temperature of 2Qt and (10).c, and/or at 20. (: with 30 (temperature of Tc for rc) Plasma treatment and / or plasma treatment at 20 ° C and 10 (rc temperature τ ,, where the average temperature of the Tg pole, Te is the average temperature of the electrode. Of course, when designing the tempering power, some parameters should be used The mode of consideration, such as the power of the electric power, the distance between the electrode and the opposite electrode, or the distance between the gas outlet plate and the front side of the substrate, the thermal coupling between the temperature regulating means and the rear side of the substrate, the reaction gas, the program gas, the temperature of the sequence The preset value, etc. In addition, the device has a means of applying force to apply a force to the edge side of the substrate (2) to generate a force that causes the substrate (2) to face the abutment surface 17 with its rear side 201224196 (5a) Hold, the side of the counter electrode (5) facing the electrode (4) has a + device (9) to hold the substrate (7). Device (21) (^ Designed as a fixture) comprising - or a number of (four) holders (31), #作料, they are pressed against the surface of the opposite electrode (5) on the edge side of the substrate (2) [it acts as a resting surface; (d) The holding means can be designed to be finger-shaped or frame-shaped, in particular, the meandering means can be mechanically connected to the counter electrode (3) but at the same time it is electrically or thermally insulated. Figure 2 is a schematic view showing the warp-flat In a cross-sectional view of the substrate (50), the substrate (5〇) has a front side (55), a back side (6〇) and an edge side (Μ) which rest on a resting surface (four). The temperature difference between the front side (55) and the back side (6〇) is dT<〇 in the above figure. In the figure below, dT > 〇 ' and in the above figure, a convex chess piece is formed from above, and a concave chess piece is formed in the following figure (each viewed from above). By applying force to the edge system (10), the substrate (10) can be pressed against the support surface (4) in this part of the drawing, and the following steps are performed during the plasma treatment: a mechanical pre-application is generated by heat in the substrate, which causes the base to be formed. Samples (concave from the direction of the electrode); see Figure 2, lower part of the figure;: - Apply force to the edge of the substrate to create a force to hold the substrate against the back side of the bean against the resting surface. Eight to achieve a high degree of thermal coupling 'to introduce hydrogen and / or helium into the area between the back side of the substrate and the face of the sin, the program pressure is 〇ι mbar: ~ (four) milli τ for example, s, adjust to the surface The average temperature in the range of 2 ° ° C ~ 300 ° C: 'Because A the substrate is pressed to the back side of the leaning surface to adjust to a phase temperature. In this way, the lateral uniformity of the resulting layer was < 1%. .: For example, use the temperature adjustment method to adjust the temperature difference Trs_Tvs纟m~ 18 201224196 1 0°Κ, where Trs is the average temperature of the side after the substrate, and Tvs is the average temperature of the front side of the substrate. The plasma treatment is especially 12 〇 < t 〜 3 〇〇. The temperature between the crucibles is 以及 and / or at 20t; ~ 10 (temperature Tvs between rc. In addition, the plasma treatment is especially between 20 ° C ~ 300t and / or between 20 C ~ 3003⁄4 The temperature TE is carried out, wherein Tg is the average temperature of the opposite electrode 'TE is the average temperature of the electrode. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view of a plasma processing apparatus for cleaning a substrate by the present invention; Fig. 2 is a flat plan view of the case where the front side and the rear side have different temperatures. The section [main component symbol (1) reactor (2) flat substrate (3) program chamber (4) electrode (5) opposite electrode (5a) Relief surface (7) Vacuum chamber (8) Housing (9) Closing device (10) Opening 19 201224196 (12) Outer chamber (13) Supply passage (15) Gas distributor (16) Gas chamber (17) Gas outlet Plate (19) Housing rear wall (20) Dielectric (21) Holding device (23) [opposite electrode (5)] Edge region (24) [Notch (38)] Edge region (25) Slot ( 27) Temperature control means (29) Temperature control means (30) Temperature control means (31) Lowering retainer (35) Frame line (36) Channel (37) Holding structure (38) Clearance (40) Temperature sensor (40') Temperature sensor (50) Flat substrate (55) [flat substrate (50)] front side (60) [flat substrate (50)] rear side 20 201224196 (65) [flat substrate (50)] edge side TE electrode average temperature TG opposite electrode average temperature
Trs 基材後側面平均溫度Trs substrate back side average temperature
Tvs 基材前側面平均溫度 21Tvs substrate front side average temperature 21