201225361 六、發明說明： 【發明所屬之技術領域】 本發明與發光二極體(LED)燈的技術領域相關，特別是 有關於發光二極體燈之封裝。 【先前技術】 熱傳輸處理對設計發光二極體(LED)燈之設計師而言 為一重要課題’蓋因此燈在相同亮度之比較下需增加效率 俾以提高與傳統式白熾及螢光照明燈價格之競爭力。當發 光二極體燈以高電流驅動時便可能在裝置内產生高溫，此 乃因為由半導體主動層之p_n接面到其周遭之熱傳輪不 足。如此高溫會傷害半導體使其品質變差，例如加速老化、 發光f；極體晶片與引線框架剝離、以及結合線之毁損。除 前if!之問題’發光二極體的光學性能也會隨溫度而 ίΐ通當接面溫度升高時’發光二極體產生之 通：會遞減。還有，因半導體帶隙能量之改變，其發 政出之波長亦隨其溫度而改變。 八 P-n 主要散熱途徑（熱流路徑）乃經由 >-、及輻射可將熱送離發光二極體。埶J ;傳f j 徑，即由半導體曰 …、得導尚有一次要途 之問題乃在於塑；外殼之；用θ ^之表層。這種設計 引線框架位於塑膠外i之内，二大多數 熱流路徑受限於料之大小。 之主要 線以促進熱傳導，然而此種 增多引 塞瓶頸，其原因乃县3丨绐禪有本身存在的散熱阻 乃疋引線仍被隔熱之塑膠外殼夾於其中。 要的疋可以改進散熱之技術來封裝發光二極 4 201225361 體燈。 【發明内容】 相關申請案之參照 本申凊案為尚審查中的美國專利申請號H/279,530 — 案的分割案，該案申請曰為2006年4月12曰，其全文於 此一併納入參考。 本發明之一實施例係提供一發光二極體（LED)結構， 該結構通常包含一置於包覆在外殼内之金屬基底上之發光 二極體半導體主動層，一次要金屬板與主動層上的銲墊電 性連結，以及一主要金屬板透過一金屬結合層與金屬基底 =性及熱傳導連結，其中主要及次要金屬板在外殼底層部 分外露’並提供給發光二極體結構外部之電性連結。 本發明之另一實施例提供一種不同之發光二極體結 構’此結構通常包含一發光二極體半導體主動層，置於一 包覆在外殼内的金屬基底之上，一次要金屬板與主動層上 的銲墊電性連結，並在外殼底層部分外露，以及一具有上 下層之主要金屬板，其中主要金屬板之上層透過一第一金 屬接合層和金屬基底電性及熱傳導連結並封於外殼内，再 者主要金屬板之下層在外殼底層部分外露。 、 本發明之又一實施例提供一種與前述兩例不同之發 光一極體結構。此結構通常包含一發光二極體半導體主動 層’置於一包覆在外殼内的金屬基底之上，一次要金屬板 與主動層上的銲墊電性連結，以及一主要金屬板，透過一 第一金屬結合層和金屬基底電性及熱傳導連結，其中主要 201225361 和次要金屬板置於外殼内底層表面而橫向延伸到該外殼之 外，以提供發光二極體結構外部之電性連結。 【實施方式】 相較於傳統發光二極體燈，本發明之實施例提供一改 良之低熱阻熱傳導途徑。在某些實施例中，提供一種表面 黏著發光二極體結構為，其係包括一主動層沉積於直接結 合在金屬板之金屬基底之上，藉由將該金屬板置於發光二 極體結構之底部，並將其外露，以產生低熱阻。之後此金 屬板可被焊到一包含一散熱器之印刷電路板（pCB)上。在 本發明之某些實施例中，金屬板與包括在該結構中之一大 型散熱器熱傳導及電性連結。 圖1為依照本發明之低熱阻發光二極體燈之第一實施 例之剖面不意圖。如圖一所示之一發光二極體半導體主動 層110係可由氮化鋁銦鎵(AlInGaN)或磷化鋁銦(AllnP)組 成。為產生二極體獨有的電性特徵，主動層110特意摻入 雜質以產生p型摻雜侧（圖未示），而主動層11〇之另一側產 生n型摻雜側（圖亦未示）。主動層110沉積在可由銅、銅 合金、或複合金屬合金組成之金屬基底120,故主動層11〇 呈多晶粒。主動層11()的ρ型摻雜側可與金屬基底12〇緊 密地耦接’以即時將熱有效地由主動層110移轉出去。 金屬結合層130可由金屬焊料組成，如金錫（Au-Sn)、 銀錫(Ag-Sn)、或錫（Sn)合金，該金屬結合層13〇夾於金屬 基底120與主要金屬板141之間作為外部連結。金屬結合 層130將主動層110及金屬基底120以熱傳導及電傳導方 6 201225361 式連結到主要金屬板141。—次要金屬板142 4透過〜 合線150與主動層11〇上之鲜塾電性連結，*結合線15〇 乃由例如.金之傳導材料所製。在某些實施例中，主餐金 屬板141在發光二極體燈封裝尺寸許可之下會盡量做刻最 大，以增加熱傳導，因此主要金屬板141通常會比次要金 屬板142大。 主動層110、金屬基底12〇以及金屬結合層130玎置 於直接位在主要金屬板141上方之發光二極體燈之底層’ 以得到比先前技術更低的熱阻，以及更好的散熱能力。發 光二極體燈可包覆在外殼160之内，此外殼160係由絕緣 材料製成，如矽樹酯、或環氧樹酯，以引導發光二極體燈 發射之光線。主要金屬板141及次要金屬板142兩者’尤 其是主要金屬板141，可橫向延伸至外殼160之外，以便 更能將熱傳導至一黏著表面。 依照本發明另一實施例，圖2為低熱阻發光二極體 (LED)燈之另一實施例之剖面示意圖。與前例不同的是，本 實施例包含一散熱器290,以及連結到此散熱器之熱傳導 途徑。此圖顯示一發光二極體半導體主動層210,該主動 層210係可由氮化鋁銦鎵(AlInGaN)或磷化鋁銦(AlinGaP) 組成，該主動層210沉積在可由銅、銅合金、或複合金屬 合金構成之金屬基底220之上。主動層210可呈多晶粒。 金屬結合層230可由金屬焊料組成，如金錫（Au-Sn)、銀錫 (Ag-Sn)、或錫（Sn)合金，該金屬結合層230夾於金屬基底 220與主要金屬板241之間作為外部連結。金屬結合層23〇 將主動層210及金屬基底220以熱傳導及電傳導方式連結 201225361 到主要金屬板241。一次要金屬板242巧*透過一結合線250 與主動層210上之銲墊電性連結，而結合線250乃由傳導 材料所製，例如：金。在某些實施例中’主要金屬板241 之表面區域在發光二極體燈封裝尺寸許玎之下會盡可能做 到最大，以增加熱傳導，因此主要金層板241之表面區域 通常會比次要金屬板242之表面區域大。金屬板241及242 之厚度通常為1至20 μ m。 主動層210、金屬基底220、金屬結合層230、結合 線250、金屬板241及242之上層均可包覆在外殼26〇之 内，此外殼乃由陶瓷絕緣材料製成，例如氮化鋁（A1N)或氧 化鋁(A1203)，亦可藉此引導發射之光線。主動層210、金 屬基底220以及金屬結合層230可置於位在主要金屬板241 上方，且置於外殼260之内部底層表面，以得到比先前技 術更低的熱阻，以及更好的散熱能力。金屬通道245及金 屬通道246可穿透過陶瓷外殼260，並將金屬板241和金 屬板242之上層連接到位於在外殼260下方的金屬板247 和金屬板248之下層。同樣由金錫(Au-Sn)、銀錫(Ag-Sn)、 或錫(Sn)合金組成額外之金屬結合層271(272)也可位於金 屬板247(248)下層和一第一傳導層243 (第二傳導層244) 之間，並以熱傳導及電傳導方式與金屬板247(248)和一第 一傳導層243 (第二傳導層244)相連結。傳導層243與傳導 層244可以是結合額外之電路系統之金屬或印刷電路板， 而本處正是本發明之第二實施例之外部連結處。在傳導層 243和傳導層244正下方便是介電層280。介電層280乃由 鋁陽極處理組成，以提供電性隔離，該介電層280能在傳 201225361 導層243、244以及散熱器290之間提供足夠之熱傳導，而 散熱器290可位於該介電層280之正下方。 依照本發明另一實施例，圖3為低熱阻發光二極體 (LED)燈之一剖面示意圖。與前例相似，本實施例亦包括 一散熱器390，以及通往該散熱器之熱傳導途徑。此圖顯 示一發光二極體半導體主動層310，該主動層310可由氮 化紹銦鎵(AlInGaN)或填化錮（A1InGaP)組成，主動層 310沉積在可由銅、銅合金、或複合金屬合金組成之金屬 基底320之上。主動層310可呈多晶粒。金屬結合層33〇 由金屬焊料組成，如金錫(Au-Sn)、銀錫（Ag-Sn)、或錫（Sn) 合金，該金屬結合層330夾於金屬基底320與主要金屬板 341之間以作為外部連結。金屬結合層mo將主動層31〇 及金屬基底320以熱傳導及電傳導方式連結到主要金屬板 341。一次要金屬板342可透過一結合線350與主動層310 上之銲墊電性連結’而結合線350乃由傳導材料所製，例 如：金。在某些實施例中’主要金屬板341之表面區域在 發光二極體燈封裝尺寸許可之下會盡可能做到最大，以增 加熱傳導’因此主要金屬板341之表面區域通常會比次要 金屬板342之表面區域大。本發明之本實施例之外部連結 可設在金屬板341以及金屬板342上，而金屬板341及342 之厚度通常為1至20μπι 。 主動層310、金屬基底320、金屬結合層330、結合 線350、一部分之金屬板341及342均可被包覆在外殼360 之内’而此外殼乃由陶瓷絕緣材料製成，例如氮化鋁 (Α1Ν) ’或氧化鋁（Αι2〇3)，亦可藉此引導發射之光線。主 201225361 動層310、金屬基底320以及金屬結合層330可置於位在 主要金屬板341上方，且置於外殼360之内部底層表面， 以得到比先前技術更低的熱阻，以及更好的散熱能力> 由 銀膠、金膠、或其他種適用之金屬膠所製成之上熱傳導層 371可直接置於外殼360下方。同樣也由金錫(Au_Sn)、銀 錫（Ag_Sn)、或錫（Sn)合金構成之一第二之金屬社人層331 可置於上熱傳導層37丨和下熱傳導層= 層372可為由銀膠、金膠、或其他種適用之金屬膠所製。 -介電層380可直接置於下熱傳導層奶下方 · 乃由銘陽極處理組成’以提供電性隔曰 在下熱傳導層372以及在介 ：;丨電層此 之間提供足夠之熱傳導。層⑽正下方之散熱器390 雖然本發明以表面勒菩 實施例以作說明，而非用於限;二㊁燈^作為 本發明可使用於各不同之運 免月之範圍，因為縱然 精神，-切權利範圍自應符合本發明之基本 貴審查委W察，早日賜准^專職_述為準，懇請 之便利於民。 ，，以嘉惠社會，提供科技 【圖式簡單說明】 實施例之剖 ^為意Γ。本糾钱如料二_燈之一 圖 2為依據本發明之低熱阻發光一 面不意圖 極體燈之一實施例之剖 201225361 圖3為依據本發明之低熱阻發光二極體燈之一實施例之剖 面示意圖。 【主要元件符號說明】 主動層110 金屬基底120 金屬結合層130 主要金屬板141 次要金屬板142 結合線150 外殼160 金屬基底220 發光二極體半導體主動層210 金屬結合層230 主要金屬板241 次要金屬板242 第一傳導層243 第二傳導層244 金屬通道245 金屬通道246 金屬板247 金屬板248 結合線2 5 0 外殼260 金屬結合層271(272) 介電層280 散熱器290 發光二極體半導體主動層310 金屬基底320 金屬結合層330 金屬結合層331 主要金屬板341 次要金屬板342 結合線350 外殼360 上熱傳導層371 下熱傳導層372 介電層380 散熱器390201225361 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to the technical field of a light-emitting diode (LED) lamp, and more particularly to a package for a light-emitting diode lamp. [Prior Art] Heat transfer processing is an important issue for designers designing light-emitting diode (LED) lamps. Therefore, the lamp needs to increase efficiency in comparison with the same brightness to improve the traditional incandescent and fluorescent lamps. The competitiveness of the price. When the light-emitting diode lamp is driven at a high current, high temperature may be generated in the device because the heat transfer wheel from the p_n junction of the semiconductor active layer to its surroundings is insufficient. Such high temperatures can damage the semiconductor to deteriorate its quality, such as accelerated aging, luminescence f; stripping of the polar body wafer from the lead frame, and damage of the bonding wires. In addition to the problem of the former if! The optical performance of the light-emitting diode will also vary with temperature. When the junction temperature rises, the light-emitting diode is generated: it will decrease. Also, due to the change in the bandgap energy of the semiconductor, the wavelength of its administration changes with its temperature. Eight P-n The main heat dissipation path (heat flow path) is to send heat away from the light-emitting diode via >-, and radiation.埶J; Passing the f j path, that is, the semiconductor 曰 ..., the guide has one more important problem lies in the plastic; the outer shell; using θ ^ surface layer. This design leads the frame inside the plastic, and most of the heat flow path is limited by the size of the material. The main line is to promote heat conduction. However, this increases the bottleneck of the plugging. The reason is that the county has its own heat dissipation resistance, and the plastic case with the lead wire is still insulated. The trick is to improve the heat dissipation technology to package the LED 2 201225361 body light. [Description of the Invention] The application of this application is a division of the U.S. Patent Application No. H/279,530, which is still under review, filed on April 12, 2006, the entire disclosure of which is incorporated herein by reference. reference. An embodiment of the present invention provides a light emitting diode (LED) structure, which generally includes an active layer of a light emitting diode semiconductor disposed on a metal substrate coated in a housing, a primary metal plate and an active layer The upper pad is electrically connected, and a main metal plate is connected to the metal substrate through a metal bonding layer, wherein the main and the minor metal plates are exposed at the bottom portion of the outer casing and provided to the outside of the light emitting diode structure. Electrical connection. Another embodiment of the present invention provides a different light emitting diode structure. The structure generally includes a light emitting diode semiconductor active layer disposed on a metal substrate covered in the outer casing, and the primary metal plate and the active The solder pads on the layer are electrically connected and exposed on the bottom layer portion of the outer casing, and a main metal plate having upper and lower layers, wherein the upper metal plate is electrically and thermally conductively connected and sealed through a first metal bonding layer and a metal substrate. Inside the outer casing, the lower layer of the main metal plate is exposed at the bottom layer of the outer casing. Another embodiment of the present invention provides a light-emitting diode structure different from the foregoing two examples. The structure generally includes a light-emitting diode semiconductor active layer disposed on a metal substrate covered in the outer casing, the primary metal plate and the solder pad on the active layer are electrically connected, and a main metal plate is passed through The first metal bonding layer and the metal substrate are electrically and thermally conductively coupled, wherein the main 201225361 and the secondary metal plate are placed on the inner surface of the inner surface of the outer casing and extend laterally beyond the outer casing to provide an electrical connection outside the light emitting diode structure. [Embodiment] An embodiment of the present invention provides an improved low thermal resistance heat conduction path compared to a conventional light emitting diode lamp. In some embodiments, a surface mount LED structure is provided that includes an active layer deposited on a metal substrate directly bonded to a metal plate by placing the metal plate in a light emitting diode structure. The bottom is exposed and exposed to produce low thermal resistance. The metal plate can then be soldered to a printed circuit board (pCB) containing a heat sink. In some embodiments of the invention, the metal plate is thermally and electrically coupled to one of the large heat sinks included in the structure. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a first embodiment of a low thermal resistance LED lamp in accordance with the present invention. As shown in Fig. 1, the light-emitting diode semiconductor active layer 110 may be composed of aluminum indium gallium nitride (AlInGaN) or aluminum indium phosphide (AllnP). In order to generate the unique electrical characteristics of the diode, the active layer 110 intentionally incorporates impurities to produce a p-type doped side (not shown), while the other side of the active layer 11 produces an n-type doped side (Fig. Not shown). The active layer 110 is deposited on a metal substrate 120 which may be composed of copper, a copper alloy, or a composite metal alloy, so that the active layer 11 is multi-grained. The p-type doped side of the active layer 11() can be tightly coupled to the metal substrate 12' to instantly transfer heat away from the active layer 110. The metal bonding layer 130 may be composed of a metal solder such as a gold-tin (Au-Sn), a silver-tin (Ag-Sn), or a tin (Sn) alloy, and the metal bonding layer 13 is sandwiched between the metal substrate 120 and the main metal plate 141. As an external link. The metal bonding layer 130 connects the active layer 110 and the metal substrate 120 to the main metal plate 141 by heat conduction and electrical conduction. The secondary metal plate 142 4 is electrically connected to the fresh layer on the active layer 11 through the bonding wire 150. The bonding wire 15 is made of, for example, a conductive material of gold. In some embodiments, the main meal metal plate 141 will maximize as much as possible under the license of the LED package size to increase heat transfer, so the primary metal plate 141 will typically be larger than the secondary metal plate 142. The active layer 110, the metal substrate 12A, and the metal bond layer 130 are placed on the bottom layer of the LED lamp directly above the main metal plate 141 to obtain lower thermal resistance than the prior art, and better heat dissipation capability. . A light-emitting diode lamp can be wrapped within the outer casing 160. The outer casing 160 is made of an insulating material such as eucalyptus or epoxy resin to direct the light emitted by the light-emitting diode lamp. Both the primary metal plate 141 and the secondary metal plate 142, particularly the primary metal plate 141, extend laterally beyond the outer casing 160 to better conduct heat to an adhesive surface. 2 is a cross-sectional view of another embodiment of a low thermal resistance light emitting diode (LED) lamp in accordance with another embodiment of the present invention. Unlike the previous example, this embodiment includes a heat sink 290 and a heat transfer path to the heat sink. The figure shows a light-emitting diode semiconductor active layer 210, which may be composed of aluminum indium gallium nitride (AlInGaN) or aluminum indium phosphide (AlinGaP), which may be deposited from copper, copper alloy, or The metal substrate 220 is formed of a composite metal alloy. The active layer 210 can be multi-grain. The metal bonding layer 230 may be composed of a metal solder such as gold-tin (Au-Sn), silver-tin (Ag-Sn), or tin (Sn) alloy, and the metal bonding layer 230 is sandwiched between the metal substrate 220 and the main metal plate 241. As an external link. The metal bonding layer 23 〇 connects the active layer 210 and the metal substrate 220 to the main metal plate 241 by heat conduction and electrical conduction. The metal plate 242 is electrically connected to the pads on the active layer 210 through a bonding wire 250, and the bonding wire 250 is made of a conductive material, such as gold. In some embodiments, the surface area of the main metal plate 241 is maximized under the LED package size to increase heat transfer, so the surface area of the main gold plate 241 is generally smaller than the secondary metal. The surface area of the plate 242 is large. The thickness of the metal plates 241 and 242 is usually 1 to 20 μm. The active layer 210, the metal substrate 220, the metal bonding layer 230, the bonding wires 250, and the upper layers of the metal plates 241 and 242 may be coated in the outer casing 26, which is made of a ceramic insulating material, such as aluminum nitride ( A1N) or alumina (A1203) can also be used to guide the emitted light. The active layer 210, the metal substrate 220, and the metal bond layer 230 may be placed over the main metal plate 241 and placed on the inner bottom surface of the outer casing 260 to achieve lower thermal resistance than prior art, and better heat dissipation capability. . The metal passage 245 and the metal passage 246 can penetrate the ceramic outer casing 260 and connect the metal plate 241 and the upper layer of the metal plate 242 to the lower layer of the metal plate 247 and the metal plate 248 located below the outer casing 260. An additional metal bond layer 271 (272), also composed of gold-tin (Au-Sn), silver-tin (Ag-Sn), or tin (Sn) alloy, may also be located under the metal plate 247 (248) and a first conductive layer. 243 (second conductive layer 244) is coupled to metal plate 247 (248) and a first conductive layer 243 (second conductive layer 244) by heat conduction and electrical conduction. Conductive layer 243 and conductive layer 244 may be metal or printed circuit boards incorporating additional circuitry, and this is where the external junction of the second embodiment of the present invention is. Conveniently under the conductive layer 243 and the conductive layer 244 is a dielectric layer 280. The dielectric layer 280 is composed of an aluminum anode treatment to provide electrical isolation. The dielectric layer 280 can provide sufficient heat conduction between the 201225361 conductive layers 243, 244 and the heat sink 290, and the heat sink 290 can be located in the dielectric layer 280. Directly below the electrical layer 280. 3 is a schematic cross-sectional view of a low thermal resistance light emitting diode (LED) lamp in accordance with another embodiment of the present invention. Similar to the previous example, this embodiment also includes a heat sink 390 and a heat transfer path to the heat sink. This figure shows a light-emitting diode semiconductor active layer 310, which may be composed of lanthanum indium nitride (AlInGaN) or filled germanium (A1InGaP), and the active layer 310 may be deposited on copper, copper alloy, or composite metal alloy. Above the metal substrate 320. The active layer 310 can be multi-grain. The metal bonding layer 33 is composed of a metal solder such as gold-tin (Au-Sn), silver-tin (Ag-Sn), or tin (Sn) alloy, and the metal bonding layer 330 is sandwiched between the metal substrate 320 and the main metal plate 341. As an external link. The metal bonding layer mo connects the active layer 31A and the metal substrate 320 to the main metal plate 341 by heat conduction and electrical conduction. The primary metal plate 342 can be electrically coupled to the pads on the active layer 310 via a bond wire 350. The bond wires 350 are made of a conductive material, such as gold. In some embodiments, the surface area of the main metal plate 341 will be maximized as much as possible under the license of the LED package size to increase heat transfer. Therefore, the surface area of the main metal plate 341 is generally smaller than the secondary metal. The surface area of the plate 342 is large. The external connection of the embodiment of the present invention may be provided on the metal plate 341 and the metal plate 342, and the thickness of the metal plates 341 and 342 is usually 1 to 20 μm. The active layer 310, the metal substrate 320, the metal bonding layer 330, the bonding wires 350, and a portion of the metal plates 341 and 342 may be encapsulated within the outer casing 360. The outer casing is made of a ceramic insulating material, such as aluminum nitride. (Α1Ν) ' or alumina (Αι2〇3), which can also be used to guide the emitted light. The main 201225361 moving layer 310, the metal substrate 320, and the metal bonding layer 330 may be placed over the main metal plate 341 and placed on the inner bottom surface of the outer casing 360 to obtain a lower thermal resistance than the prior art, and better. Heat Dissipating Capacity> The upper heat conducting layer 371 made of silver glue, gold glue, or other suitable metal glue can be placed directly under the outer casing 360. The second metal layer 331 which is also composed of gold tin (Au_Sn), silver tin (Ag_Sn), or tin (Sn) alloy may be placed on the upper heat conduction layer 37 and the lower heat conduction layer = layer 372 may be Made of silver glue, gold glue, or other suitable metal glue. - The dielectric layer 380 can be placed directly under the underlying heat conducting layer milk. - It is composed of an anode anode to provide an electrical barrier to provide sufficient heat transfer between the lower heat conducting layer 372 and the dielectric layer. The heat sink 390 directly below the layer (10), although the invention is described by the surface of the embodiment, rather than for limitation; the second and second lamps can be used as the scope of the different transportations, because even though the spirit, - The scope of the rights is self-contained by the basic review committee of the invention, and the early full-time _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , to provide benefits to the society, provide technology [Simplified description of the diagram] The section of the embodiment is meant. FIG. 2 is a cross-sectional view of an embodiment of a low thermal resistance illuminating diode lamp according to the present invention. FIG. 3 is a cross-sectional view of an embodiment of a low thermal resistance illuminating diode lamp according to the present invention. A schematic cross-sectional view of an example. [Main component symbol description] Active layer 110 Metal substrate 120 Metal bonding layer 130 Main metal plate 141 Secondary metal plate 142 Bonding wire 150 Housing 160 Metal substrate 220 Light-emitting diode semiconductor active layer 210 Metal bonding layer 230 Main metal plate 241 times Metal plate 242 first conductive layer 243 second conductive layer 244 metal channel 245 metal channel 246 metal plate 247 metal plate 248 bonding wire 2 5 0 outer casing 260 metal bonding layer 271 (272) dielectric layer 280 heat sink 290 light emitting diode Body Semiconductor Active Layer 310 Metal Substrate 320 Metal Bonding Layer 330 Metal Bonding Layer 331 Main Metal Plate 341 Secondary Metal Plate 342 Bonding Wire 350 Housing 360 Upper Thermal Conduction Layer 371 Lower Thermal Conduction Layer 372 Dielectric Layer 380 Heat Sink 390