TW201230365A - Building-integrated photovoltaic panel - Google Patents
Building-integrated photovoltaic panel Download PDFInfo
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- TW201230365A TW201230365A TW101104888A TW101104888A TW201230365A TW 201230365 A TW201230365 A TW 201230365A TW 101104888 A TW101104888 A TW 101104888A TW 101104888 A TW101104888 A TW 101104888A TW 201230365 A TW201230365 A TW 201230365A
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- photovoltaic panel
- integrated photovoltaic
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
201230365 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種光伏裝置，且特別是有關於一種 薄膜型建築整合式光伏（building-integrated photovoltaic; BIPV)面板，且該薄膜型建築整合式光伏面板可反射可 見光譜之一特殊顏色。 【先前技術】 光伏電池可藉由光伏效應將陽光的能量轉換成電 力，且光伏電池所組成組件可用於製作光伏模組或太陽 月匕面板。在建桌整合式光伏（buildinginte抑⑽ photovoltaic; BIPV)技術的應用中，光伏模組係被製造 成與建築材料（如窗戶、屋頂與外牆材料等）一體成形。 在麥塞的都會區域，對於如何將太陽能湘於使建築物 時維持引人注目的外觀而言，ΒΙΡλ^術是—種理想的解 決良方。目前可供利用的光伏電池大多由塊狀材料（諸 如結晶矽或多晶矽材料）所組成。在ΒΙρν材料中所包 含之塊狀光伏電池多為非透明㈣，因此只限於應用在 遮光板、屋頂或外牆等材料。然而，由於ΒΙρν窗戶材 料必須為透明材質，而且最好㈣反射出建築師與客戶 在美學偏好方面所欲呈現的（在可見光譜顏色。 因此，迄今仍有待開發出新的技術來解決上述種種問題。 【發明内容】 201230365 在一方面，本發明係關於一種BIpv面板。在苴中 二個實施例中，BIPV面板包含—基材層、—反射層;、一 第-導電層、—主動層與—第二導電層。反射層係形成 於基材層上’並且具有複數㈣―窗μ使基材層暴露 出複數個基材層第一外露部分。 第一導電層係形成於反射層與上述複數個第一窗口 所暴露出上述複數個基材層第一外露部分上，具有複數 ，第二窗口以使基材層暴露出複數個基材層第二外露部 分，且每一上述之第二窗口係位於所對應之一個上述之 第:窗口内。主動層係形成於第一導電層上，具有複數 個第二窗口以使第一導電層暴露出複數個第一導電層第 外路部分，且每一上述之第三窗口係位於所對應之一 個上述之第一窗口内。第二導電層係形成於主動層上， 具有複數個第四窗口以使第一導電層暴露出複數個第一 導電層第一外露部分，且每一上述之第四窗口係位於所 對應之一個上述之第一窗口内。其中，反射層具有一折 射率與一厚度，藉以使BIPV面板之反射率光譜在一可 見光》普之一選定波長範圍内，對於一入射光且有一 值。 、取人 在其中一個實施例中，所述之選定波長範圍係對應 於紫色、深藍色、淺藍色、銀色、金色、橙色、紅色與 棕色當中之至少一者。 在其中一個實施例中，反射層之折射率係介於1 5 與6.5之間。 ' ’ 在其中一個實施例中，反射層包含碳化矽（silic〇n s 5 201230365 carbide; SiC )，且反射層之厚度係介於丨麵與3〇〇 M之 間。 在另一個實施例中’反射層包含微晶矽 (micro-crystalline silicon; pc-Si) ’ 且反射層之厚度係介 於1 nm與600 nm之間。 在其中一個實施例中，第一導電層與第二導電層包 含一透明導電氧化物（transparent conducting oxide; TCO )或一金屬。透明導電氧化物包含氧化辞（zinc 〇xide; ZnO )、氧化錫（tin oxide; Sn〇2 )、氧化錮（indium tin oxide; ITO)、氧化I呂錫（aluminum tin oxide; ATO)、氧化紹辞 (aluminum zinc oxide; AZO )、氧化鎘錮（cadmium indium oxide; CIO)、氧化錯鋅（cadmiuni zinc oxide; CZO)、氧化鎵鋅（gallium zinc oxide; GZO)與氧化就錫 (fluorine tin oxide; FTO)當中之至少一者。金屬包含鉬 (molybdenum; Mo )、鈦（titanium; Ti )、鎳（nickel; Ni)、 金（gold; Au)、銀（silver; Ag)、鉻（chromium; Cr)與 銅（copper; Cu)當中之至少一者。 在其中一個實施例中，主動層更包含至少一光伏 層，且光伏層係由至少一半導體所形成。其中，所述之 半導體包含第IV族元素半導體、第m_V族元素半導 體、第II-VI族元素半導體與有機化合物半導體（organic compound semiconductors )當中之至少一者。 在一方面，本發明係關於一種BIPV面板。在其中 一個實施例中，BIPV面板包含一基材層、一第一導電 層、一主動層、一第二導電層與一反射層。主動層係形 201230365 成於第一導電層上；第二導電層係形成於主動層上；且 反射層係形成於基材層與第一導電層之間，或形成於第 二導電層上使第一導電層形成於基材層上。其中，反射 層具有一折射率與一厚度，藉以使BIPV面板之反射率 光譜在一可見光譜之一選定波長範圍内，對於一入射光 具有一最大值。 在其中一個實施例中，所述之選定波長範圍係對應 於紫色、深藍色、淺藍色、銀色、金色、橙色、紅色與 棕色當中之至少一者。 在其中一個實施例中，反射層包含碳化矽（silicon carbide; SiC )或微晶石夕（micro-crystalline silicon; pc_Si)。 在另一個實施例中，反射層包含微晶石夕 (micro-crystalline silicon; pc-Si)，且反射層之厚度係介 於1 nm與600 nm之間。 在其中一個實施例中，且反射層之厚度係介於1 nm 與600 nm之間。 在其中一個實施例中，第一導電層與第二導電層包 含一透明導電氧化物（transparent conducting oxide; TCO)或一金屬。 在另一方面，本發明係關於一種BIPV面板。在其 中一個實施例中，BIPV面板包含一基材層、一第一導電 層、一主動層、與一第二導電層。第一導電層係形成於 基材層上；主動層係形成於第一導電層上；第二導電層 係形成於主動層上；其中，第一導電層具有一厚度，藉 以使BIPV面板之反射率光譜在一可見光譜所對應之紫 7 201230365 色、深藍色、淺藍色、銀色、金色、橙色、紅色與棕色 當中之至少一者的波長範圍内，對於一入射光具有一最 大值。 在其中一個實施例中，第一導電層與第二導電層包 含一透明導電氧化物（transparent conducting oxide; tco)或一金屬。 在其中一個實施例中，第一導電層之厚度係介於1 nm與3000 nm之間。 在又一方面，本發明係關於一種形成BIPV面板的 方法。在其中一實施例中，該方法包含以下步驟：首先， 係在一基材層上沉積出一反射層，並在反射層上刻劃出 複數個第一窗口，藉以使基材層暴露出複數個基材層第 一外露部分。接著，在反射層上以及在基材層被第一窗 口所暴露出之第一外露部分上沉積出一第一導電層，並 且在第一導電層上刻劃出複數個第二窗口，藉以使基材 層暴露出複數個基材層第二外露部分，並使每一上述之 第二窗口位於所對應之一個上述之第一窗口内。 緊接著’在第一導電層上沉積出一主動層，並在主 動層上劃出複數個第三窗口，藉以使第一導電層暴露出 複數個第一導電層第一外露部分，並使每一上述之第三 固口位於所對應之一個上述之第一窗口内。然後，在主 動層上沉積出—第二導電層，並在第二導電層上劃出複 數個第四窗口，藉以使第一導電層暴露出複數個第一導 電層第二外露部分，並使每一上述之第四窗口位於所對 應之一個上述之第一窗口内。其中，反射層具有一折射 三 8 201230365 率與一厚度，藉以使BIPV面板之反射率光譜在一可見 光5晋之一選定波長範圍内，對於一入射光具有一最大值。 在其中一個實施例中，所述之選定波長範圍係對應 於紫色、深藍色、淺藍色、銀色、金色、橙色、紅色與 椋色虽中之至少一者，且反射層包含碳化石夕（silic〇n carbide; SiC )或微晶石夕（micro_cryStaiHne siHc〇n;叫別）。 在其中一個實施例中，上述之刻劃步驟係利用一雷 射加以實施。 以上之說明僅為本發明之較佳實施例說明，依據本 發明之上述實施例說明而作其它種種之改良及變化，當 仍屬於本發明之發明精神及界定之專利範圍内。 【實施方式】 本發明所採用的具體實施例，將藉由以下之實施例 及圖式作進一步之說明。然而，本發明可以利用多種形 式加以實施，下述實施例所揭露之内容主要係提供給所 屬技術領域中具有通常知識者能夠具體理解本發明之技 術内容’本發明之專纖圍並不於下述實施例所揭 露之内容。 可以被理解的是，在以下的描述令，每當提及一元 件形成在P元件上時，似表財直接或間接（在兩 者之間存在其他元件）形成在所述另一元件上。反之， 每當提及-元件係直接形成在另—元件上時，則表示在 兩者之間不存在其他元件。此外，「與/或」的意義可包 含所列之-個或多個相關項目之任何或所有的組合。 201230365 在以下所揭露之内容中，所述之「大 露數值增減20%内的範圍，較佳者為所 曰斤揭 %内的範圍’更佳者為所揭露數值增減5二的範 =。1() 在以下所揭露之「基材層」係指—薄 薄型材料層的成分可為石夕、二氧化石夕、氧化銘、藍^石、 鍺、坤化鎵（gamum arsenide; GaAs)、石夕錯合金、鱗化 銦（nidium phosphide; InP)、塑膠、金屬等可應用於 導體裝置（如光伏電池）者。 以下將結合圖式第-圖至第十三圖，對本發明較佳 實施例提出更為㈣的綱。依據本剌的目的，在其 中-方面’本發明關於—種（_型）建築整合式光伏 面板/裝置。 第一圖係顯示依據本發明第一實施例所提供之一光 伏面板100之剖面結構圖。光伏面板1〇〇可作為一建築 整合式光伏（building-integrated photovoltaic; BIPV)面 板使用，並且具有一基材層11〇、—反射層12〇、一第一 (前）導電層130、一主動層14〇、一第二（後）導電層 150與一背面層160。反射層12〇係形成於基材層u〇 上，第一導電層130係形成於反射層12〇上，主動層14〇 係形成於第一導電層130上，第二導電層15〇係形成於 主動層140上，且背面層160係形成於第二導電層I% 上。反射層120具有反射層具有一折射率與一厚度，藉 以使BIPV面板之反射率光譜在一可見光譜之一選定波 長範圍内，對於一入射光具有一最大值。 請一併參閱第十圖，其係顯示可見光譜中之各顏色 201230365 與波長範圍以及頻率範圍之對應關係表。較佳者，反射 層之反射率大約係介於1.5與6.5之間。第一圖所示之光 伏面板100可作為BIPV面板使用，並且應用於建築物 之囪戶、屋頂、踏壁或其他類似建材。藉由選取適當的 反射層120的材料及厚度，可使Βΐρν窗戶、屋頂、牆 壁或其他類似建材，呈現出建築師與客戶在美學偏好方 面所欲呈現的顏色。 對第一圖所顯示之光伏面板100而言，基材層 可為一薄層材料，其組成成份可包含矽、二氧化矽、氧 化!呂、藍寶石、鍺、石申化鎵（galHum arsenide; GaAs)、 石夕錯合金、鱗化錮（indium phosphide; InP)、玻璃、塑 膠與金屬等應用於半導體裝置（如光伏電池）之材料。 第一導電層130與第二導電層150由相同或實質不 同的材料所形成。在本實施例中，第一導電層13〇可由 透明導電氧化物（transparent conducting oxide; TC0 )或 一金屬形成。其中，透明導電氧化物可包含氧化鋅（zinc oxide; ZnO )、氧化錫（tin oxide; Sn02 )、氧化銦（indium tin oxide; ITO)、氧化銘錫（aiuminuin tin oxide; ΑΤΟ)、 氧化铭鋅（aluminum zinc oxide; AZO )、氧化錢銦 (cadmium indium oxide; CIO )、氧化鎘鋅（cadmium zinc oxide; CZO )、氧化鎵鋅（gaiiiuin zinc oxide; GZO )與氧 化氟錫（fluorine tin oxide; FTO)當中之至少一者；金屬 可包含銦（molybdenum; Mo)、鈦（titanium; Ti)、鎳（nickel; Νι)、金（gold; Au )、銅（COpper; Cu )、鉻（chromium; Cr )201230365 VI. Description of the Invention: [Technical Field] The present invention relates to a photovoltaic device, and more particularly to a film-type building-integrated photovoltaic (BIPV) panel, and the film-type building integrated type Photovoltaic panels reflect a particular color of the visible spectrum. [Prior Art] Photovoltaic cells can convert the energy of sunlight into electricity by the photovoltaic effect, and the components of the photovoltaic cells can be used to fabricate photovoltaic modules or solar panels. In the application of building integrated photovoltaic (BIPV) technology, photovoltaic modules are manufactured in one piece with building materials such as windows, roofs and exterior materials. In the metropolitan area of Messer, ΒΙΡλ^ is an ideal solution for how to maintain the eye-catching appearance of solar energy. Photovoltaic cells currently available are mostly composed of bulk materials such as crystalline germanium or polycrystalline germanium materials. The bulk photovoltaic cells contained in ΒΙρν materials are mostly non-transparent (IV), so they are limited to materials such as visors, roofs or exterior walls. However, since the ΒΙρν window material must be a transparent material, and preferably (4) reflects the aesthetics of the architect and the client (in the visible spectrum color), so far, new technologies have yet to be developed to solve the above problems. SUMMARY OF THE INVENTION 201230365 In one aspect, the present invention relates to a BIpv panel. In two embodiments, the BIPV panel includes a substrate layer, a reflective layer, a first conductive layer, an active layer, and a second conductive layer. The reflective layer is formed on the substrate layer 'and has a plurality (four) - window μ such that the substrate layer exposes a plurality of first exposed portions of the substrate layer. The first conductive layer is formed on the reflective layer and a plurality of first windows exposing the first exposed portions of the plurality of substrate layers, having a plurality, the second window exposing the substrate layer to the second exposed portions of the plurality of substrate layers, and each of the second portions The window is located in a corresponding one of the above: the window: the active layer is formed on the first conductive layer, and has a plurality of second windows to expose the first conductive layer to the plurality of a conductive layer outer portion, and each of the third windows is located in a corresponding one of the first windows. The second conductive layer is formed on the active layer, and has a plurality of fourth windows to make the first The conductive layer exposes a plurality of first exposed portions of the first conductive layer, and each of the fourth windows is located in a corresponding one of the first windows, wherein the reflective layer has a refractive index and a thickness, thereby The reflectance spectrum of the BIPV panel is in a selected wavelength range of one visible light, and has a value for an incident light. In one embodiment, the selected wavelength range corresponds to purple, dark blue, At least one of light blue, silver, gold, orange, red, and brown. In one embodiment, the refractive index of the reflective layer is between 15 and 6.5. ' ' In one embodiment, The reflective layer comprises tantalum carbide (silic〇ns 5 201230365 carbide; SiC ), and the thickness of the reflective layer is between the surface of the crucible and 3〇〇M. In another embodiment, the reflective layer comprises microcrystalline germanium ( Micro-crystalline silicon; pc-Si) ' and the thickness of the reflective layer is between 1 nm and 600 nm. In one embodiment, the first conductive layer and the second conductive layer comprise a transparent conductive oxide (transparent) Conductive oxide; TCO) or a metal. The transparent conductive oxide contains oxidized (zinc 〇xide; ZnO), tin oxide (SnO2), indium tin oxide (ITO), and oxidized I. Aluminum tin oxide; ATO), aluminium zinc oxide (AZO), cadmium indium oxide (CIO), cadmiuni zinc oxide (CZO), gallium zinc oxide (GZO) And at least one of fluorine tin (FTO). The metal comprises molybdenum (Mo), titanium (ti), nickel (nickel; Ni), gold (gold), silver (silver; Ag), chromium (chromium; Cr) and copper (copper) At least one of them. In one embodiment, the active layer further comprises at least one photovoltaic layer, and the photovoltaic layer is formed by at least one semiconductor. Wherein the semiconductor comprises at least one of a Group IV element semiconductor, an m_V group element semiconductor, a Group II-VI element semiconductor, and an organic compound semiconductors. In one aspect, the invention relates to a BIPV panel. In one embodiment, the BIPV panel includes a substrate layer, a first conductive layer, an active layer, a second conductive layer, and a reflective layer. The active layer is formed on the first conductive layer; the second conductive layer is formed on the active layer; and the reflective layer is formed between the substrate layer and the first conductive layer, or is formed on the second conductive layer The first conductive layer is formed on the substrate layer. Wherein, the reflective layer has a refractive index and a thickness such that the reflectance spectrum of the BIPV panel has a maximum value for a incident light in a selected wavelength range of one of the visible spectra. In one embodiment, the selected wavelength range corresponds to at least one of purple, dark blue, light blue, silver, gold, orange, red, and brown. In one embodiment, the reflective layer comprises silicon carbide (SiC) or micro-crystalline silicon (pc_Si). In another embodiment, the reflective layer comprises micro-crystalline silicon (pc-Si) and the thickness of the reflective layer is between 1 nm and 600 nm. In one embodiment, the thickness of the reflective layer is between 1 nm and 600 nm. In one embodiment, the first conductive layer and the second conductive layer comprise a transparent conducting oxide (TCO) or a metal. In another aspect, the invention relates to a BIPV panel. In one embodiment, the BIPV panel includes a substrate layer, a first conductive layer, an active layer, and a second conductive layer. The first conductive layer is formed on the substrate layer; the active layer is formed on the first conductive layer; the second conductive layer is formed on the active layer; wherein the first conductive layer has a thickness, thereby causing reflection of the BIPV panel The rate spectrum has a maximum value for an incident light in a wavelength range of at least one of violet 7 201230365 color, dark blue, light blue, silver, gold, orange, red, and brown corresponding to a visible spectrum. In one embodiment, the first conductive layer and the second conductive layer comprise a transparent conducting oxide (tco) or a metal. In one embodiment, the first conductive layer has a thickness between 1 nm and 3000 nm. In yet another aspect, the present invention is directed to a method of forming a BIPV panel. In one embodiment, the method comprises the steps of: firstly depositing a reflective layer on a substrate layer, and patterning a plurality of first windows on the reflective layer, thereby exposing the substrate layer to a plurality of The first exposed portion of the substrate layer. And depositing a first conductive layer on the reflective layer and on the first exposed portion of the substrate layer exposed by the first window, and patterning a plurality of second windows on the first conductive layer, thereby The substrate layer exposes a plurality of second exposed portions of the substrate layer, and each of the second windows is located in a corresponding one of the first windows. Immediately following, an active layer is deposited on the first conductive layer, and a plurality of third windows are drawn on the active layer, so that the first conductive layer exposes the first exposed portions of the plurality of first conductive layers, and each A third fixed port is located in the corresponding one of the first windows. Then, a second conductive layer is deposited on the active layer, and a plurality of fourth windows are drawn on the second conductive layer, so that the first conductive layer exposes the second exposed portions of the plurality of first conductive layers, and Each of the fourth windows is located in a corresponding one of the first windows. Wherein, the reflective layer has a refractive index of 8 201230365 and a thickness such that the reflectance spectrum of the BIPV panel has a maximum value for a incident light in a selected wavelength range of visible light. In one embodiment, the selected wavelength range corresponds to at least one of purple, dark blue, light blue, silver, gold, orange, red, and ochre, and the reflective layer includes carbon stone eve ( Silic〇n carbide; SiC) or microcrystalline stone (micro_cryStaiHne siHc〇n; called another). In one embodiment, the scoring steps described above are performed using a laser. The above description is only for the preferred embodiment of the present invention, and various other modifications and changes can be made without departing from the spirit and scope of the invention. [Embodiment] The specific embodiments of the present invention will be further described by the following embodiments and drawings. However, the present invention can be implemented in various forms, and the content disclosed in the following embodiments is mainly provided to a person having ordinary knowledge in the art to understand the technical content of the present invention. The content disclosed in the embodiments. It will be understood that, in the following description, whenever a reference to an element is formed on a P element, it appears that the other is directly or indirectly (other elements are present between the two). Conversely, whenever a reference to an element is formed directly on another element, it means that there are no other elements between the two. In addition, the meaning of "and/or" may include any or all combinations of one or more of the associated items listed. 201230365 In the content disclosed below, the above-mentioned "the range of the increase or decrease of the value of the big dew is 20%, and the range of the best is the range within the %" is better. =.1() The "substrate layer" as disclosed below means that the composition of the thin material layer may be Shixi, sulphur dioxide, oxidized, blue, stone, gamma arsenide (gamum arsenide; GaAs), lithium alloy, nidium phosphide (InP), plastic, metal, etc. can be applied to conductor devices (such as photovoltaic cells). In the following, in conjunction with the drawings from the first to the thirteenth drawings, a more general outline of the present invention will be proposed. In accordance with the purpose of the present invention, the present invention relates to a (_ type) building integrated photovoltaic panel/device. The first figure shows a cross-sectional structural view of a photovoltaic panel 100 according to a first embodiment of the present invention. The photovoltaic panel 1 can be used as a building-integrated photovoltaic (BIPV) panel, and has a substrate layer 11 —, a reflective layer 12 〇, a first (front) conductive layer 130, and an active A layer 14A, a second (post) conductive layer 150 and a back layer 160. The reflective layer 12 is formed on the substrate layer u, the first conductive layer 130 is formed on the reflective layer 12, the active layer 14 is formed on the first conductive layer 130, and the second conductive layer 15 is formed. On the active layer 140, the back layer 160 is formed on the second conductive layer I%. The reflective layer 120 has a reflective layer having a refractive index and a thickness such that the reflectance spectrum of the BIPV panel has a maximum wavelength for one of the visible spectra and a maximum for an incident light. Please refer to the tenth figure, which shows the correspondence between each color 201230365 and the wavelength range and frequency range in the visible spectrum. Preferably, the reflectivity of the reflective layer is between about 1.5 and 6.5. The photovoltaic panel 100 shown in the first figure can be used as a BIPV panel and applied to a building, roof, tread wall or other similar building material. By selecting the appropriate material and thickness of the reflective layer 120, Βΐρν windows, roofs, walls or other similar building materials can be presented with the colors desired by the architect and the client in terms of aesthetic preferences. For the photovoltaic panel 100 shown in the first figure, the substrate layer may be a thin layer of material, and its composition may include lanthanum, cerium oxide, oxidized lanthanum, sapphire, lanthanum, gallium arsenide (galHum arsenide; GaAs), stellite alloy, indium phosphide (InP), glass, plastic and metal materials used in semiconductor devices such as photovoltaic cells. The first conductive layer 130 and the second conductive layer 150 are formed of the same or substantially different materials. In this embodiment, the first conductive layer 13A may be formed of a transparent conducting oxide (TC0) or a metal. The transparent conductive oxide may comprise zinc oxide (ZnO), tin oxide (SnO2), indium tin oxide (ITO), aiuminuin tin oxide (ΑΤΟ), oxidized zinc (aluminum zinc oxide; AZO), cadmium indium oxide (CIO), cadmium zinc oxide (CZO), galacuin zinc oxide (GZO) and fluorinated tin oxide (FTO) At least one of the metals; the metal may comprise indium (molybdenum; Mo), titanium (titanium; Ti), nickel (nickel; Νι), gold (gold), copper (COpper; Cu), chromium (chromium; Cr )
S 與銀（silver; Ag)當中之至少一者。除以上所述之透明 11 201230365 其他透明導電氧化物與金屬亦 導電氧化物與金屬之外 可用以實現本發明。 ，據本發明所揭露之内容，可以選擇讓陽光在第二 ¥電層150祕制11G “射至絲面板觸據以 選擇對應的材料選用方案。若選擇讓陽光在第二導電層 150處入射至光伏面板100，則第二導電層15〇必須由^ 明導電材料所形成。反之，若選擇讓陽光在基材層則 處入射至光伏面板刚，則基材層則必須由透明材料 (如玻璃）所形成；且第二導電層⑼係由透明導電材 料所形成。前者有時會被歸類為「基材型光伏電池」，後 者有時會被歸類為「上板型（superstrate_type)光伏電 池」。 主動層140可包含至少一光伏層，且光伏層可由至 少一半導體所形成。所述之半導體包含第IV族元素半導 體、第III-V族元素半導體、帛π_νι族元素半導體與有 機化合物半導體（organic comp〇und semic〇nduct〇rs )當 中之至少一者。在本實施例中，主動層14〇包含一串接 接面之堆疊結構。舉例而言，所述之堆疊結構可具有一 非晶石夕（amorphous silicon; a_Si )層與一微晶石夕層 (micro-crystalline siliC0n; μ〇8ί)層。非晶矽層係形^ 於第一導電層130上，且微晶矽層係形成於非晶石夕層 上，藉以定義出一 a-Si/pc-Si串接接面。在另一實施例 中，堆疊結構可具有一 η型摻雜之硫化鎘（Cds)層與 一 p型摻雜之碲化鎘（CdTe)層。n型摻雜之硫化錦層 係形成於第一導電層130上，且ρ型摻雜之碲化鎘層係 12 201230365 形成於η型摻雜之硫化鎘層上，藉以 n:CdS/P:CdTe串接接面。 我出一 在另一實施例令，主動厚丨4Γ)夕止/上a 週期表中4IV料素=導 物+導體賴、第Π_νι族化合物半導體薄膜 : 細tt之至少一者。詳言之，上述在化學週= 之弟IV無7C素的半導體薄膜可為—碳薄膜、—發薄膜、 -錄，膜、-碳化㈣膜或—補薄膜，其中每二者皆 可為單晶、多晶、非晶與微晶#中之至少―種形式。白 舉例而s ’上述在化學週期表中之第m_v族化合物 半導體薄臈可為碎化鎵（gallium _ide; GaAs)薄^ 磷化銦鎵0ndium phosphide; InGaP) '薄膜當中、 之至t一者。上述在化學週期表中之第II_VI族化合物半 ( copper indium diselenide; CIS )溥膜、二硒化銅銦鎵（卿卩沉㈣伽gallium dlSdenide; CIGS)薄膜與碲化鎘（cadmium teteide; CdTe)薄膜當中之至少—者。更進—步來說，上述之有 機化合物半導體薄膜可為—種由共姆合物提供者與富 勒稀衍生物（PCMB)賤者馳紅混合物。 士此外，主動層140可為—光電轉換結構之pN單層 …構，且所述之PN單層結構係由p型半導體與N型半 導體，組成。或者’主動層14G可為—光電轉換結構之 PII^單層結構’且所述之PIN單層結構係由p型半導體、 本貝層（intrinsic layer)與N型半導體所組成。然而，At least one of S and silver (silver; Ag). In addition to the above-described transparency 11 201230365 Other transparent conductive oxides and metals may also be used in addition to conductive oxides and metals to achieve the present invention. According to the disclosure of the present invention, it is possible to choose to let the sunlight in the second electric layer 150 secret 11G "shot to the silk panel to select the corresponding material selection scheme. If the sunlight is selected to be incident on the second conductive layer 150, To the photovoltaic panel 100, the second conductive layer 15 must be formed of a conductive material. Conversely, if the sunlight is selected to be incident on the substrate layer to the photovoltaic panel, the substrate layer must be made of a transparent material (such as The second conductive layer (9) is formed of a transparent conductive material. The former is sometimes classified as a "substrate type photovoltaic cell", and the latter is sometimes classified as "superstrate_type". PV". The active layer 140 can include at least one photovoltaic layer, and the photovoltaic layer can be formed from at least one semiconductor. The semiconductor includes at least one of a Group IV element semiconductor, a Group III-V element semiconductor, a 帛π_νι element semiconductor, and an organic compound semiconductor (organic comp〇und semic〇nduct〇rs). In this embodiment, the active layer 14A includes a stack of junction surfaces. For example, the stacked structure may have an amorphous silicon (a_Si) layer and a micro-crystalline siliC0n (μ〇8ί) layer. The amorphous germanium layer is formed on the first conductive layer 130, and the microcrystalline germanium layer is formed on the amorphous layer, thereby defining an a-Si/pc-Si string junction. In another embodiment, the stacked structure can have an n-type doped cadmium sulfide (Cds) layer and a p-doped cadmium telluride (CdTe) layer. The n-type doped sulfide layer is formed on the first conductive layer 130, and the p-type doped cadmium telluride layer 12 201230365 is formed on the n-type doped cadmium sulfide layer, whereby n: CdS/P: CdTe serial connection. I am in the other embodiment, the active thickness is 4 Γ 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 至少 至少 至少 至少In detail, the semiconductor film having no 7C in the chemical cycle = the fourth embodiment can be a carbon film, a film, a film, a film, a carbonized film, or a film, each of which can be a single film. At least one of crystal, polycrystalline, amorphous, and microcrystalline #. For example, s 'the above m_v group semiconductor thin film in the chemical periodic table may be gallium (idelium; GaAs) thin ^ indium gallium phosphide 0ndium phosphide; InGaP) 'film, to t one . The above-mentioned copper-dium diselenide (CIS) ruthenium film, copper indium gallium diselide (CIGS) thin film and cadmium teteide (CdTe) in the chemical periodic table At least one of the films. Further, the organic semiconductor thin film described above may be a mixture of a mixture of a common condensate and a fuller derivative (PCMB). Further, the active layer 140 may be a pN single layer structure of a photoelectric conversion structure, and the PN single layer structure is composed of a p-type semiconductor and an N-type semiconductor. Alternatively, the active layer 14G may be a PII^ single layer structure of the photoelectric conversion structure and the PIN single layer structure is composed of a p-type semiconductor, an intrinsic layer and an N-type semiconductor. however,
S 本發明並不以此為限。在另—實施例巾，主動層可為一 13 201230365 串接接面堆4結構、三接面堆疊結構或錄三層之光電 轉換薄膜結構。 接下來’將繼續詳述本實施例的具體實施方式。在 其中-種實施方式中，基材層則係由厚度約為32_ 之玻璃所形成，第一導電層130與第二導電層150係厚 度分別約為1700 nm與1450 nm之透明導電氧化物薄 膜。主動層140包含一非晶石夕層與一微晶石讀，且非晶 矽層與微晶矽層之總厚度約為18〇〇 nm。反射層12〇係 =-折射率約為2.55之碳切薄麟形成。藉由碳化石夕 薄膜厚度的變化，光伏面板⑽可被製作來反射出可見 光譜中不同的顏色。依據本發明，基材層則、第一導 電層130、第二導電層15()與主動層⑽之厚度亦可配 口反射層120之厚度而變化性地採用，藉以實現所欲呈 現的反射性質。 第 圖係顯示依據本發明不同的實施方式，三種光 伏面板對人料在基材層⑽上之穿透率與反射率光譜 圖。每-光伏面板觸係利用碳化石夕薄膜作為反射層。 =第=圖中，光譜曲線加、撕與鳥係分別對應於碳 石/膜之厚度為10 nm、15 nm與20 nm之穿透率光 :厚=線2〇8、210與212係分別對應於碳化條S The invention is not limited thereto. In another embodiment, the active layer may be a 13 201230365 series junction stack 4 structure, a triple junction stack structure or a three layer photoelectric conversion film structure. Next, the specific embodiments of the embodiment will be described in detail. In one embodiment, the substrate layer is formed of glass having a thickness of about 32 mm, and the first conductive layer 130 and the second conductive layer 150 are transparent conductive oxide films having thicknesses of about 1700 nm and 1450 nm, respectively. . The active layer 140 comprises an amorphous layer and a microcrystalline reading, and the total thickness of the amorphous layer and the microcrystalline layer is about 18 〇〇 nm. The reflective layer 12 is formed by a carbon-cut thin film having a refractive index of about 2.55. By varying the thickness of the carbon carbide film, the photovoltaic panel (10) can be fabricated to reflect different colors in the visible spectrum. According to the present invention, the thickness of the substrate layer, the first conductive layer 130, the second conductive layer 15 and the active layer (10) can also be variably used to match the thickness of the reflective layer 120, thereby achieving the desired reflection. nature. The figure shows a transmission and reflectance spectrum of three photovoltaic panels on a substrate layer (10) in accordance with various embodiments of the present invention. Each-photovoltaic panel contact utilizes a carbonized carbide film as a reflective layer. = In the figure =, the spectral curve plus, tear and bird corresponds to the carbon stone/film thickness of 10 nm, 15 nm and 20 nm, respectively. Light: Thickness = Line 2〇8, 210 and 212 respectively Corresponding to carbonized strip
S 線32"!、1511111與20謂之反射率光譜。光譜曲 穿、僅早獨使用玻璃基材（即未設置反射層）之 4 °由第二圖可知’穿透率會隨著碳化石夕薄膜 ^ 加而降低，反射率則會隨著碳化石夕薄膜厚度的 P而增加。隨著碳切薄膜厚度的增加，反射率ς最 14 201230365 大值係往長波長移動。同時，上诚^ 呈規ΐ皆洛^ 種先伏面板係分別 壬見出糸色、冰藍色與淺監色之外觀。 溥膜光伏面板包含非砂與微料之轉堆疊層以 =為主動料，所财之光電轉換料係高於非晶石夕單 接面之主動層。非砂與微㈣之能隙分賴為18 ^ 與UeV。因為微晶矽的能隙較小的緣故， 具有串接堆疊架構之光伏電池可加強魏紅光波長 把圍之光線，藉以提升光鶴換效率，如此可導致在缺 之反射層時’使光伏面板觸呈現深色或黯淡顏色的外 觀。當一反射層120插設在基材層11〇與第一導電層 之間時（如第-®所示）’在維持高光電轉換效率:餘， 光伏面板1GG仍可具有相當引人注目的外觀顏色。 ^請-併參閱第十-圖，其係顯示依據本發明不同的 二轭方式，二種光伏面板之光伏與光學性質摘要表。在 第十一圖中，voc係表示開路電壓（〇pen_drcuit voltage ); Isc係代表短路電流（sh〇rt drcuit cu腦⑽· 係代表最大功率點位置；Pstable係代表穩定功率；ff係 ^表填充因子；Rs係代表㈣阻抗；—係代表並聯阻 抗，Trans.係代表穿透率；Ref{係代表反射率；（）内的 數字代表波長，其單位為 nm ° 在本發明另一實施例中，反射層120係為一折射率 為3.5之微晶矽薄膜。第三(幻圖與第三(b)圖係分別顯示 依據本發明不同的實施方式，三種光伏面板對光入射至 基材層100之穿透率光譜與吸收率光譜。在第三(a)圖 中，光瑨曲線302、304與306係分別對應於微晶石夕反射 15 201230365 層之厚度為30 nm、40 nm與50 nm之穿透率光譜；在第 三(b)圖中’光譜曲線308、31〇與312係分別對應於微 b曰石夕反射層之厚度為30 nm、40 nm與50 nm之反射率光 譜。由第二(b)圖中可以看出隨著微晶矽反射層厚度的增 加，反射率的最大值係往長波長移動。當微晶矽反射層 之厚度分別為30 nm與50 nm時，光伏面板係分別呈現 出銀（綠）色與金色之外觀。請一併參閱第十二圖，其 係顯示依據本發明不同的實施方式，其中二種光伏面板 (微晶矽反射層之厚度分別為3〇 ηιη與50 nm)之光伏 與光學性質摘要表。在第十二圖中，各相關參數的說明 與第Η 圖所描述者相同。 請繼續參閱第十三圖，其係顯示依據本發明不同的 實施方式，其他各種（具有不同微晶矽反射層之厚度） 光伏面板之光伏與光學性質摘要表。在第十三圖中，各 相關參數的說明與第十一圖所描述者相同。 在本發明另一方面，係提供—種用以作為ΒΙρν面 板的薄膜光伏面板之一系列有關於沉積與刻劃之製造步 驟。請參閱第四⑻圖至第四(f)圖，其係顯示製造薄膜光 伏面板之一系列處理程序。其中，第一步驟係如第四(幻 圖所不，其係在一基材層410上沉積出一第一（前）導 電層420。第二步驟係如第四(b)圖所示，其係利用一第 一雷射刻劃P1將第一導電層420刻劃出複數個第一窗口 (或開口）425，藉以將第一導電層42〇分割成複數個分 離的電池。 第三步驟係如第四（c)圖所示，其係在第一導電層 s 16 201230365 =〇上沉積出一主動層43〇。舉例而 含一非岭層432與—微㈣層434，非=30 y包 T成於第—導電層420上，且 ；可 上。第四步驟係如第四心:::r =^_Ρ2將主動層伽刻劃出複數個第二 第五步驟係如第四(e)圖所示，其係在 係如二Si沉積出第二(背)導電層44〇。第六步驟 導t’其_用—第三雷射關P3將第二 ^層440刻劃出複數個第三窗口（或開口）445,夢以 ST光伏電池⑽心…與…最後:係 ^ 一個光伏電池C1與最後—個光伏電池c5之第 。'層44〇上分別形成—正電極顿與—負電極偏。 上述之硬數個第二窗口 435係允許每一個光伏電池 至C4)之第二導電層44〇分別電性連接於下一個 光伏電池（C2SC5)之第一導電層。藉由以上之製 造步驟’可使光伏面板上之光伏電池C1至C5彼此串聯 電性連接。 第五圖係顯示依據本發明第二實施例所提供之一光 伏面板500之剖面結構圖。光伏面板5〇〇可作為一建築 正 δ 式光伏（building-integrated photovoltaic; BIPV)面 板使用，並且具有複數個光伏電池，各光伏電池包含一 基材層510、一反射層520、一第一（前）導電層53〇、 —主動層540與一第三（後）導電層55〇。反射層52〇 係形成於基材層510上；第一導電層53〇係形成於反射 層520上；主動層540係形成於第一導電層53〇上；且The S-line 32"!, 1511111 and 20 are the reflectance spectra. Spectral flexion, only 4 ° of the glass substrate (that is, no reflective layer is provided), as shown in the second figure, 'the penetration rate will decrease with the addition of carbon carbide film, and the reflectivity will follow the carbon fossil. The film thickness of P increases. As the thickness of the carbon-cut film increases, the reflectance ς is at most 14 201230365. At the same time, Shangcheng ^ is the rule of the 洛 ^ ^ ^ ^ ^ ^ 先 先 面板 种 种 种 种 种 种 种 面板 面板 面板 面板 面板 面板 面板 面板 面板 面板 面板 面板 面板The ruthenium film photovoltaic panel comprises a non-sand and micro-material stacking layer with = as the active material, and the photovoltaic conversion material system is higher than the active layer of the amorphous stone singular joint. The energy gap between non-sand and micro (4) is divided into 18 ^ and UeV. Because of the small energy gap of the microcrystalline crucible, the photovoltaic cell with the serial stacking structure can enhance the wavelength of the Weihongguang wavelength, thereby improving the efficiency of the light crane, which can lead to the photovoltaic panel being touched in the absence of the reflective layer. Renders the appearance of a dark or faint color. When a reflective layer 120 is interposed between the substrate layer 11 〇 and the first conductive layer (as shown in the first -®) ' while maintaining high photoelectric conversion efficiency: the remaining, the photovoltaic panel 1GG can still be quite striking Exterior color. ^Please-and refer to the tenth-figure, which shows a summary of the photovoltaic and optical properties of the two photovoltaic panels in accordance with different conjugate methods of the present invention. In the eleventh figure, voc is the open circuit voltage (〇pen_drcuit voltage); Isc is the short circuit current (sh〇rt drcuit cu brain (10) · represents the maximum power point position; Pstable represents the stable power; ff system ^ table fill Factor; Rs represents (iv) impedance; - system represents parallel impedance, Trans. represents penetration; Ref { represents reflectivity; number in () represents wavelength, and its unit is nm °. In another embodiment of the invention The reflective layer 120 is a microcrystalline germanium film having a refractive index of 3.5. The third (mirror and third (b) drawings respectively show different photovoltaic panels for light incident on the substrate layer according to different embodiments of the present invention. 100 transmittance spectrum and absorption spectrum. In the third (a) diagram, the pupil curves 302, 304, and 306 correspond to the microlithic reflections respectively. The thickness of the 201230365 layer is 30 nm, 40 nm, and 50. The transmittance spectrum of nm; in the third (b) diagram, the spectral curves 308, 31〇, and 312 correspond to the reflectance spectra of the microb-bendite reflection layer at 30 nm, 40 nm, and 50 nm, respectively. It can be seen from the second (b) diagram that the thickness of the reflective layer increases with the microcrystalline Plus, the maximum value of the reflectivity shifts to long wavelengths. When the thickness of the microcrystalline germanium reflective layer is 30 nm and 50 nm, respectively, the photovoltaic panel exhibits a silver (green) color and a gold appearance, respectively. Figure 12 is a summary diagram showing the photovoltaic and optical properties of two photovoltaic panels (the thickness of the microcrystalline germanium reflective layer are 3〇ηηη and 50 nm, respectively) according to different embodiments of the present invention. In the figure, the description of each relevant parameter is the same as that described in the figure. Please continue to refer to the thirteenth figure, which shows various other (thickness of different microcrystalline reflective layers) according to different embodiments of the present invention. A summary table of photovoltaic and optical properties of the panel. In the thirteenth diagram, the description of each relevant parameter is the same as that described in the eleventh figure. In another aspect of the invention, a thin film photovoltaic is provided for use as a ΒΙρν panel One of the series of panels has manufacturing steps for deposition and characterization. Please refer to the fourth (8) to fourth (f) drawings, which show a series of processing procedures for manufacturing thin film photovoltaic panels. As shown in the fourth (phantom, a first (front) conductive layer 420 is deposited on a substrate layer 410. The second step is as shown in the fourth (b) diagram, which utilizes a first The laser scribing P1 scribes the first conductive layer 420 into a plurality of first windows (or openings) 425, thereby dividing the first conductive layer 42 into a plurality of separate cells. The third step is as follows (c) As shown in the figure, an active layer 43 is deposited on the first conductive layer s 16 201230365 = 〇. For example, a non-ridge layer 432 and a micro (four) layer 434 are included, and the non-30 y package T is formed. - on the conductive layer 420, and; can be on. The fourth step is as follows: fourth:::r =^_Ρ2, the active layer is etched into a plurality of second and fifth steps, as shown in the fourth (e) diagram, and the system is deposited in a system such as two Si. The second (back) conductive layer 44 is. The sixth step leads to t' _ use - the third laser off P3 to scribe the second layer 440 out of a plurality of third windows (or openings) 445, dreaming of ST photovoltaic cells (10) heart ... and ... finally: system ^ One photovoltaic cell C1 and the last one photovoltaic cell c5. 'The layer 44 is formed separately - the positive electrode and the negative electrode are biased. The hard plurality of second windows 435 described above allow the second conductive layer 44 of each of the photovoltaic cells to C4) to be electrically connected to the first conductive layer of the next photovoltaic cell (C2SC5), respectively. The photovoltaic cells C1 to C5 on the photovoltaic panel can be electrically connected in series to each other by the above manufacturing steps. The fifth drawing shows a cross-sectional structural view of a photovoltaic panel 500 according to a second embodiment of the present invention. The photovoltaic panel 5 can be used as a building-integrated photovoltaic (BIPV) panel, and has a plurality of photovoltaic cells, each of which comprises a substrate layer 510, a reflective layer 520, and a first The first conductive layer 53A, the active layer 540 and a third (post) conductive layer 55A. The reflective layer 52 is formed on the substrate layer 510; the first conductive layer 53 is formed on the reflective layer 520; the active layer 540 is formed on the first conductive layer 53?
S 17 201230365 第二導電層550係形成於主動層540上。 在其中一個製造過程中，係與上述之第一實施例相 似，其係先在基材層510上沉積出反射層52〇。接下來， 第一導電層530、主動層540與第二導電層55〇依序被 沉積出，並且利用雷射加以刻劃。其中，主動層54〇包 含一非晶梦層542與一微晶砍層544。第一雷射刻劃pi、 第二雷射刻劃P2與第三雷射刻劃P3係分別刻劃出複數 個第一窗口 535、第二窗口 545與第三窗口 555。如第五 圖所示，因為有反射層520存在，在反射層52〇之一死 區（Dead Zone) 560處，用以形成第一雷射刻劃pi至 第二雷射刻劃P3時所使用的部分雷射光束會被反射層 520所反射，或因此而消散（如第五圖中之虛箭頭線所 示）。 為了元全移除刻劃所產生之多餘材料，用以形成第 一雷射刻劃P1至第三雷射刻劃朽所使用之雷射光束的 波長必須依據所欲刻劃的材料來選用。以常用於形成第 一導電層530之氧化鋅（ZnO)為例，其所使用之用以 形成第一雷射刻劃P1之雷射光束的波長通常為355 nm。如第二圖與第三圖所示，此波長之雷射光束大部分 會被反射層所反射。反射層520也具有吸收用以形成第 二雷射刻劃P2與第二雷射刻劃P3所使用之雷射光束的 傾向。這種反射層520反射與吸收雷射光束的情況，將 會導致在光伏面板的某些位置產生不整齊均勻或斷裂的 刻劃線（如第六圖所顯示之光伏面板之局部影像所示）。 第七圖係顯示本發明第三實施例為解決「死區 201230365 H:)」_所提供之技術缕—光伏面板· 匕S -基材層710、一反射層72〇、一第一導電層顶、 -主動層740與一第二導電層75〇，其中主動層州包 含-非晶梦層742與-微晶碎層雨。上述結構係至少 形成兩個統電池Cla與C2a。同時，光伏面板7〇〇之 結構係與第五_示之光伏面板，之結構相似，兩者 之間只存在一個差異’其差異係預先對光伏模組700之 反射層720加以圖案化，藉以形成複數個有色窗口（⑺ windows) 770。每一個有色窗口 77〇之寬度係大於所對 應之死區760之寬度，並且涵蓋所對應的死區76〇，藉 此可使用以开>成第一雷射刻劃ρ〗至第三雷射刻劃所 使用之雷射光束不至於被反射層720所反射。藉此，刻 劃線將會比較整齊均勻。 第八(a)圖至第八(h)圖係顯示依據本發明第三實施 例所提供之解決「死區（Dead Zone)」問題所提供之技 術方案來製造光伏面板之一系列處理程序。其中，第一 步驟係如第八(a)圖所示，其係在一基材層81〇上沉積出 一反射層820。第二步驟係如第八(b)圖所示，其係利用 一第一雷射刻劃P1將反射層820刻劃出複數個第一窗口 (或開口）825以作為「有色窗口」，藉以使基材層81〇 暴露出複數個基材詹第一外露部分。第三步驟係如第八 (c)圖所示，其係在反射層820上以及在基材層810被第 一窗口 825所暴露出基材層第一外露部分上沉積出一第 一（前）導電層830。 第四步驟係如第八(d)圖所示，其係利用一第二雷射 201230365 刻劃P2將第一導電層830刻劃出複數個第二★ 口）835，藉贿基材層81G暴露出複數個_自/= =部分’藉以將第-導電層83〇分割為複數個“㈣ 池。母-個第二窗口 835係位於所對應之第“離的電 内’藉以使用以形成第二雷射刻劃P2 = 口 825 不至於被反射層82G所反射。第五步 田射光束 示，其_-_83()上_^_=>)圖所 丨只山王動層840。與 例而言，主動層840可包含一非晶石夕層_與 二 層844，非晶矽層842可形成於第一導電層妇〇曰曰 微晶矽844可形成於非晶矽層842上 上且 第六步驟係如第八(f)圖所示，其係利用— 刻劃P3將主動層840刻劃出複數個第三窗口—；射 845,藉以使第—導電層謂暴露出複數個第口) -外露部分。每-個第三窗口 845係位於所對應之二一 窗口 825内，藉以使用以形成第三雷射刻劃p3g使用之 雷射光束不至於被反射層82〇所反射。第七步驟係如第 八(g)圖所示，其係在主動層840上沉積出—第二'（背） 導電層850°第人步_如第人(聰所示，其係利=一 第四雷射刻劃P4將第二導電層850刻劃出複數個第四窗 口（或開口）855,藉以使第一導電層83〇暴露出複數個 第-導電層第二外露部分，至此可形成複數個光伏電 池’在第八⑻圖中，係形成四個光伏電池c卜C2、 與C4。每一個第四窗口 855係位於所對應之第一窗口 825内，藉以使用以形成第四雷射刻劃p4所使用之雷射 光束不至於被反射層820所反射。S 17 201230365 The second conductive layer 550 is formed on the active layer 540. In one of the manufacturing processes, similar to the first embodiment described above, a reflective layer 52 is deposited on the substrate layer 510. Next, the first conductive layer 530, the active layer 540, and the second conductive layer 55 are sequentially deposited and scribed by laser. The active layer 54 includes an amorphous layer 542 and a microcrystalline layer 544. The first laser scoring pi, the second laser scoring P2, and the third laser scoring P3 are respectively engraved with a plurality of first windows 535, a second window 545, and a third window 555. As shown in the fifth figure, since there is a reflective layer 520, it is used at a dead zone 560 of the reflective layer 52 to form the first laser scribe pi to the second laser scribe P3. Part of the laser beam will be reflected by the reflective layer 520 or dissipated (as indicated by the dashed arrow line in the fifth figure). In order to remove the excess material generated by the scribing, the wavelength of the laser beam used to form the first laser scoring P1 to the third laser scoring must be selected according to the material to be scribbled. Taking zinc oxide (ZnO), which is commonly used to form the first conductive layer 530, as an example, the wavelength of the laser beam used to form the first laser scribe P1 is usually 355 nm. As shown in the second and third figures, most of the laser beam of this wavelength is reflected by the reflective layer. The reflective layer 520 also has a tendency to absorb the laser beam used to form the second laser scribe P2 and the second laser scribe P3. Such a reflective layer 520 reflects and absorbs the laser beam, which will result in irregularities or broken scribe lines at certain locations of the photovoltaic panel (as shown in the partial image of the photovoltaic panel shown in Figure 6) . The seventh figure shows the third embodiment of the present invention to solve the problem of "dead zone 201230365 H:)" - photovoltaic panel, 匕S - substrate layer 710, a reflective layer 72 〇, a first conductive layer The top, - active layer 740 and a second conductive layer 75, wherein the active layer contains - amorphous layer 742 and - microcrystalline layered rain. The above structure forms at least two battery cells C1a and C2a. At the same time, the structure of the photovoltaic panel 7 is similar to that of the fifth photovoltaic panel, and there is only one difference between the two. The difference is that the reflective layer 720 of the photovoltaic module 700 is patterned in advance. Form a plurality of colored windows ((7) windows) 770. The width of each colored window 77〇 is greater than the width of the corresponding dead zone 760, and covers the corresponding dead zone 76〇, thereby being used to open > into the first laser marking ρ〗 to the third mine The laser beam used for the scribe is not reflected by the reflective layer 720. Thereby, the scribing will be neat and uniform. The eighth (a) through eighth (h) drawings show a series of processing procedures for fabricating photovoltaic panels in accordance with the technical solution provided by the third embodiment of the present invention to solve the "Dead Zone" problem. The first step is as shown in the eighth (a) diagram, in which a reflective layer 820 is deposited on a substrate layer 81. The second step is as shown in the eighth (b) diagram, which uses a first laser scribe P1 to scribe the reflective layer 820 into a plurality of first windows (or openings) 825 as a "colored window". The substrate layer 81 is exposed to a plurality of substrates, the first exposed portion. The third step is as shown in the eighth (c), which is deposited on the reflective layer 820 and on the first exposed portion of the substrate layer 810 exposed by the first window 825. a conductive layer 830. The fourth step is as shown in the eighth (d) diagram, which uses a second laser 201230365 to mark P2 to scribe the first conductive layer 830 to a plurality of second ports 835, and borrow the base layer 81G. Exposing a plurality of _self/==portions to divide the first conductive layer 83〇 into a plurality of “(4) cells. The mother-second window 835 is located in the corresponding “off-in-electric” to be used to form The second laser scribes P2 = port 825 is not reflected by the reflective layer 82G. The fifth step of the field beam shows that the _-_83() on the _^_=>) map is only the mountain king layer 840. For example, the active layer 840 may include an amorphous layer _ layer and a second layer 844, and the amorphous layer 842 may be formed on the first conductive layer. The wafer 444 may be formed on the amorphous layer 842. The upper and sixth steps are as shown in the eighth (f) diagram, which uses the scribe P3 to scribe the active layer 840 into a plurality of third windows - 845, thereby exposing the first conductive layer Multiple number of mouths) - exposed parts. Each third window 845 is located within the corresponding two-one window 825, whereby the laser beam used to form the third laser scribe p3g is not reflected by the reflective layer 82. The seventh step is as shown in the eighth (g) diagram, which is deposited on the active layer 840 - the second ' (back) conductive layer 850 ° the first step _ as the first person (cognito, its profit = A fourth laser scribe P4 scribes the second conductive layer 850 out of the plurality of fourth windows (or openings) 855, so that the first conductive layer 83 〇 exposes the second exposed portions of the plurality of first conductive layers, thereby A plurality of photovoltaic cells can be formed. In the eighth (8) diagram, four photovoltaic cells c, C2, and C4 are formed. Each of the fourth windows 855 is located in the corresponding first window 825 for use to form a fourth The laser beam used by the laser scribing p4 is not reflected by the reflective layer 820.
S 20 201230365 最後，係在第-個光伏電池C1與最後 池C4之第二導電層85〇上分別 電 上刀另J形成一正電極862盥一 負電極864。上述之複數個第四窗口 855係允許每二個 ^伏電池⑽至⑶之第二導電層㈣分別電性連接 於下-個光伏電池（以⑷之第—導電層83〇。= 以上之製造步驟，可使光伏面板上之光伏電池Ο至 彼此串聯電性連接。 第九圖係顯示利用第八⑷圖至第八(h)圖之製程所 製作出之光伏面板之局部影像。如第九圖所示，利用第 二雷射刻劃P2、第三雷射刻劃P3與第四雷射刻劃p4所 形成之刻劃線都相當整齊均勻。綜合以上所述，本發明 所提供之（賴）BIPV φ板可反射可見光譜巾之特定顏 色。 ^ 藉由上述之本發明實施例可知，本發明確具產業上 之利用價值。惟以上之實施例說明，僅為本發明之較佳 實施例說明，舉凡所屬技術領域中具有通常知識者當可 依據本發明之上述實施例說明而作其它種種之改良及變 化。然而這些依據本發明實施例所作的種種改良及變 化，當仍屬於本發明之發明精神及界定之專利範圍内。 【圖式簡單說明】 第一圖係顯示依據本發明第一實施例所提供之—光伏面 板之剖面結構圖； 第二圖係顯示依據本發明不同的實施方式，三種光伏面S 20 201230365 Finally, a positive electrode 862 盥 a negative electrode 864 is formed on the second photovoltaic layer C1 of the first photovoltaic cell C1 and the second conductive layer 85 of the last cell C4, respectively. The plurality of fourth windows 855 described above allow the second conductive layer (4) of each of the two volt batteries (10) to (3) to be electrically connected to the next photovoltaic cell respectively (the first conductive layer of (4) is 83 〇. In the step, the photovoltaic cells on the photovoltaic panel are electrically connected to each other in series. The ninth figure shows a partial image of the photovoltaic panel produced by the processes of the eighth (4) to eighth (h) processes. As shown in the figure, the scribe lines formed by the second laser scribe P2, the third laser scribe P3 and the fourth laser scribe p4 are quite uniform and uniform. In summary, the present invention provides ( The BIPV φ plate can reflect the specific color of the visible spectrum towel. ^ As can be seen from the above embodiments of the present invention, the present invention has industrial use value. However, the above embodiments are merely preferred embodiments of the present invention. For example, those skilled in the art can make various other modifications and changes as described in the above embodiments of the present invention. However, various modifications and changes made in accordance with the embodiments of the present invention still belong to the present invention. BRIEF DESCRIPTION OF THE INVENTION The following is a schematic view of a photovoltaic panel according to a first embodiment of the present invention; the second figure shows a different implementation according to the present invention. Way, three kinds of photovoltaic surface
S 21 201230365 板對入射光在基材層上之穿透率與反射率光譜 圖； 第⑻圖與第二(b)圖係分別顯示依據本發明不同的實 她方式，二種光伏面板對光入射至基材層之穿透 率光譜與吸收率光譜； 第四⑷圖至第四(⑽係顯示製造薄膜光伏面板之一系 列處理程序； 第五圖係顯示依據本發明第二實施例所提供之一光伏面 板500之剖面結構圖； 第六圖係顯示在光伏面板之局部位置產生不整齊均勾或 斷裂的刻劃線； 第七圖係顯示本發明第三實施例為解決「死區（Dead zone)」問題所提供之技術方案； 第入⑷圖至第八(}1)目係騎依縣發明帛三實施例所 提供之解決「死區（Deadzone)」問題所提供之 技術方案來製造光伏面板之一系列處理程序； 第九圖係顯示利用第八⑷圖至第人_之製程所製作 出之光伏面板之局部影像； 第十圖係顯示可見光譜中之各顏色與波長範圍以及頻率 範圍之對應關係表； 第十一圖係顯示依據本發明不同的實施方式，三種光伏 面板之光伏與光學性質摘要表； £ 第十二圖係顯示依據本發明不同的實施方式，其中二種 光伏面板（微晶石夕反射層之厚度分別為如rJ與 50 nm)之光伏與光學性質摘要表；以及 22 201230365 第十三圖係顯示依據本發明不同的實施方式，其他各種 (具有不同微晶矽反射層之厚度）光伏面板之光 伏與光學性質摘要表。 【主要元件符號說明】 100 光伏面板 110 基材層 120 反射層 130 第一（前）導電層 140 主動層 150 第二（後）導電層 160 背面層 202、204、206 光譜曲線 208、210、212 光譜曲線 214 光譜曲線 302、304、306 光譜曲線 308、310、312 光譜曲線 410 基材層 420 第一（前）導電層 425 第一窗口（或開口） 430 主動層 432 非晶矽層 434 微晶矽層 435 第二窗口（或開口） 440 第二（背）導電層 s 23 201230365 445 第三窗口（或開口） 462 正電極 464 負電極 500 光伏面板 510 基材層 520 反射層 530 第一（前）導電層 540 主動層 542 非晶矽層 544 微晶矽層 550 第二（後）導電層 560 死區 535 第一窗口 545 第二窗口 555 第三窗口 700 光伏面板 710 基材層 720 反射層 730 第一導電層 740 主動層 750 第二導電層 742 非晶矽層 744 微晶矽層 770 有色窗口（ color windows ) 760 死區 24 201230365 810 820 825 830 835 840 842 844 845 850 855 862 864 Cl > Cla PI P2 P3 P4 基材層 反射層 第一窗口（或開口） 第一（前）導電層 第二窗口（或開口） 主動層 非晶矽層 微晶矽層 第三窗口（或開口） 第二（背）導電層 第四窗口（或開口） 正電極 負電極 C2、C3、C4、C5光伏電池 、C2a 光伏電池 第一雷射刻劃 第二雷射刻劃 第三雷射刻劃 第四雷射刻劃 25S 21 201230365 Plate penetration rate and reflectance spectrum of incident light on the substrate layer; Figures (8) and 2 (b) show respectively different ways according to the present invention, two kinds of photovoltaic panel pair light Transmittance spectrum and absorptance spectrum incident on the substrate layer; fourth (4) to fourth ((10) shows a series of processing procedures for manufacturing a thin film photovoltaic panel; the fifth figure shows the second embodiment according to the present invention A cross-sectional structural view of one of the photovoltaic panels 500; the sixth figure shows a scribe line that produces irregularities or breaks at a local position of the photovoltaic panel; and the seventh figure shows that the third embodiment of the present invention solves the "dead zone ( The technical solution provided by the problem of Dead zone); The first (4) to the eighth (}1) are the technical solutions provided by the implementation of the "Deadzone" problem provided by the third embodiment of the invention. A series of processing programs for manufacturing photovoltaic panels; the ninth image shows partial images of photovoltaic panels produced by using the eighth (4) to the first process; the tenth shows the colors and wavelength ranges in the visible spectrum and Frequency range The corresponding relationship table; the eleventh figure shows a summary of photovoltaic and optical properties of three photovoltaic panels according to different embodiments of the present invention; FIG. 12 shows different embodiments according to the present invention, wherein two kinds of photovoltaics A summary of the photovoltaic and optical properties of the panel (the thickness of the microcrystalline reflection layer is such as rJ and 50 nm, respectively); and 22 201230365 the thirteenth diagram shows various embodiments (with different crystallites according to different embodiments of the invention) Thickness of 矽Reflective Layer) Summary of Photovoltaic and Optical Properties of Photovoltaic Panels. [Main Symbol Description] 100 Photovoltaic Panel 110 Substrate Layer 120 Reflective Layer 130 First (Front) Conductive Layer 140 Active Layer 150 Second (Back) Conductive Layer 160 back layer 202, 204, 206 spectral curve 208, 210, 212 spectral curve 214 spectral curve 302, 304, 306 spectral curve 308, 310, 312 spectral curve 410 substrate layer 420 first (front) conductive layer 425 first Window (or opening) 430 active layer 432 amorphous germanium layer 434 microcrystalline germanium layer 435 second window (or opening) 440 second (back) Layer s 23 201230365 445 Third window (or opening) 462 Positive electrode 464 Negative electrode 500 Photovoltaic panel 510 Substrate layer 520 Reflective layer 530 First (front) conductive layer 540 Active layer 542 Amorphous germanium layer 544 Microcrystalline germanium layer 550 Second (back) conductive layer 560 dead zone 535 first window 545 second window 555 third window 700 photovoltaic panel 710 substrate layer 720 reflective layer 730 first conductive layer 740 active layer 750 second conductive layer 742 amorphous germanium layer 744 microcrystalline layer 770 colored window (color windows) 760 dead zone 24 201230365 810 820 825 830 835 840 842 844 845 850 855 862 864 Cl > Cla PI P2 P3 P4 substrate layer reflective layer first window (or opening) First (front) conductive layer second window (or opening) active layer amorphous germanium layer microcrystalline germanium layer third window (or opening) second (back) conductive layer fourth window (or opening) positive electrode negative electrode C2 , C3, C4, C5 photovoltaic cells, C2a photovoltaic cells, first laser scoring, second laser scoring, third laser scoring, fourth laser scoring, 25
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161443529P | 2011-02-16 | 2011-02-16 | |
| US13/118,110 US8088990B1 (en) | 2011-05-27 | 2011-05-27 | Color building-integrated photovoltaic (BIPV) panel |
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| Publication Number | Publication Date |
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| TW201230365A true TW201230365A (en) | 2012-07-16 |
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