201230374 六、發明說明： 【發明所屬之技術領域】 本發明係與矽薄膜太陡& .、太陽此電池有關，特別是關於提升 太陽月b電池光電轉換效率 , 丰之一種矽薄膜太陽能電池之光電 轉換兀件的製作方法。 尤电 【先前技術】 傳統太陽能電池是平面式單料或多晶㈣成之太陽 月匕池纟於其中石夕基底的易脆特性使基底晶圓需有特定 的厚度條件，致使基底材料即占去太陽能電池大量的成本 消耗；因此以非晶石夕（amorph〇uss出⑽，心）或微晶石夕 (microcrystallme siliCon )為主的石夕薄膜太陽能電池則以 其可在玻璃上成長薄膜之特點，加上光電轉換材料本身對 可見光譜的吸收力較單晶石夕或多晶石夕太陽能電池強，而更 可以薄型化製成的優點，逐漸受到各國產業的重視，不過 鲁 λ缺點在於光f轉換效率尚不及單晶㈣多㈣太陽能電 池。故當前以矽材料蘊藏豐富及取材容易的情況下，仍以 單晶矽或多晶矽太陽能電池為主流。 以目前矽薄膜太陽能電池之實驗階段而言，其光電轉 換元件係於一玻璃基板上依序疊置一以透明導電性氧化物 (transparent conductive oxide，TCO)材質為主之透明電 極層、一材質為非晶矽或微晶矽之本質層，以及一材質為 銘（A1)或其他金屬之不透明電極層，以使光線在入射透 明電極層並通過該本質層時產生光電轉換而發電。為提升 201230374 == 率，該透明電極層通常製成 為具有光摘結構，詳而言之，該透明電極 層連接的下表面係經化處理，使得 該/ ^ 會因產生制而霧化，以增加光線在該本制 徑長度及停留時間，提高本質層吸收光線轉換為電 =對之產生數量，因此該光散射結構又可稱為光封存社 太陽能電池之光封存結構早先存在於單晶石夕或多 太陽能電池，騎受光_找轉換本㈣，亦即 石夕或多晶雜構上，以侧或長晶方式製作出正金字^ 或逆金字塔型料封存結構，再將受光面之㈣電極層以 鑛膜方式疊置上去，如此應用於非晶⑦或微晶⑦太陽能電 池’則為先在受光面玻璃基板上，依透明電極層的材料特 性形成光封存結構，再絲電轉換本質層疊置上去。舉例 而言，習用之一種矽薄膜太陽能電池之光電轉換元件，其 透明電極層係於玻璃基板上以長晶方式料—材質為氧化 鋅（Zn〇)之鋸齒狀的光散射結構；然而，受限於氧化鋅 的/、方堆積晶體結構，該光散射結構的微觀表面於實際上 為/、方柱狀的突起，相當不易製作成鋸齒狀尖端，尤其更 不易以長晶之方式製出均勻的金字塔型結構，故一旦製成 太陽能電池後，自玻璃基板之受光面方向而言，透明電極 層之底部實為高度不規則的散射結構，且鋸齒狀之凹陷底 部亦稍顯平坦，因此底部的反射缺陷造成其光電轉換效率 不如預期。又，習用之另一種矽薄膜太陽能電池之光電轉 201230374 換元:’其透明電極層係於玻璃基板上先鋪設—氧化辞的 平面單aa層’再於該單晶層⑽出難狀的級射結構； 然而’為了避免過似轉電極層適當的導電厚度，需控 制鑛齒狀之成形顧，賴絲射結構⑽制痕之間會 間隔-相當距離’故自玻璃基板之受光面方向而言鑛齒 狀之凹陷底部更顯平坦’意即，該光散射結構之糖化程度 較小’使得光線之霧化率較低，因此該光電轉換元件之效 率仍不理想。加上單以氧化鋅形成之透明電極層的導電率 不佳，需額外雜如齡屬料電材料啸高導電率，因 此增加矽薄膜太陽能電池之製程複雜度。 換言之，前述習用之石夕薄膜太陽能電池之光電轉換元 件均仍有其不足之處，而有待改進。 【發明内容】 a有鑑於上述缺失，本發明之主要目的在於提供-種石夕 ，膜太陽能電池之光電轉換^件的製作方法其不但簡 單’更可提升韻膜太陽能電池之光電轉換效率者。β 為達成上述目的，本發明所提供之石夕薄膜太陽能電池 之光電轉換元件的製作方法，其步驟包含有：a)在一模 具之-粗糖表面及-透光基板之—第—表面之間夾設一層 透明感光膠，該透光基板具有在與該第-表面相對之第二 表面上依序堆疊之一透明電極層、一材質為非晶矽 (amorphous silicon) φ ( microcrystalline silicon ) 之本質層’以及-背電極層；b)使該透明感光膠受光而 201230374 定型出一與該模具之粗糙表面具有互補形狀之光散射表 面；以及C)將該模具自該光散射表面取下。藉此，該光 電轉換元件不但容易製作，且該光散射表面之形狀可均勻 且密集地起伏，以提升光線通過該光散射表面時之霧化 率，進而提升矽薄膜太陽能電池之光電轉換效率。 有關本發明所提供之矽薄膜太陽能電池之光電轉換元 件的製作方法的詳細構造、特點、組裝或使用方式，將於 後續的實施方式詳細說明中予以描述。然而，在本發明領 域中具有通常知識者應能瞭解，該等詳細說明以及實施本 發明所列舉的特定實施例，僅係用於說明本發明，並非用 以限制本發明之專利申請範圍。 【實施方式】 以下將藉由所列舉之實施例配合隨附之圖式，詳細說 明本發明之技術内容及特徵，其中： 第一圖及第二圖為本發明一第一較佳實施例所提供之 矽薄膜太陽能電池之光電轉換元件的製作方法之示意圖， 係顯示該元件具有多數呈45度角之鋸齒的態樣； 第三圖及第四圖為本發明該第一較佳實施例所提供之 矽薄膜太陽能電池之光電轉換元件的製作方法之示意圖， 係顯示該元件具有多數呈90度角之鋸齒的態樣； 第五圖為光線通過本發明該第一較佳實施例所提供之 光電轉換元件之霧化率相對於波長的曲線圖； 第六圖為光線通過本發明該第一較佳實施例所提供之 201230374 光電轉換元件所產生之電流密度相對於電壓的曲線圖； 第七圖為本發明一第二較佳實施例所提供之矽薄膜太 陽能電池之光電轉換元件的示意圖； 第八圖及第九圖為本發明該第二較佳實施例所提供之 矽薄獏太陽能電池之光電轉換元件的製作方法之示意圖； 以及 第十圖係類同於第六圖’惟其中更顯示光線通過本發 明該第二較佳實施例所提供的光電轉換元件所產生之電流 密度相對於電壓的曲線。 申請人首先在此說明’在以下將要介紹之實施例以及 圖式中，相同之參考號碼，表示相同或類似之元件或其結 構特徵。 凊先參閱第一圖及第二圖，本發明一第一較佳實施例 所提供之矽薄膜太陽能電池之光電轉換元件10的製作方 法包含有以下步驟： a)如第一圖所示，在一模具20之一粗縫表面22及 一透光基板30之一第一表面31之間夾設一層透明感光膠 40，該透光基板30之一與該第一表面31相對之第二表面 32依序堆疊一透明電極層50、一材質為矽之本質層60， 以及一背電極層70。詳而言之，該模具20係由聚二曱基 石夕氧烧（Polydimethyl siloxane，PDMS)所製成之—微結構 模具，因此該粗糙表面22可製成鋸齒狀，並具有均勻且 密集地分佈的多數個V形凹槽222，且各該凹槽222具有 二夾角為45度之平面；該透明感光膠40係由如UV膠等 201230374 照光即可固化之材質所製成，可先被鋪設於該透光基板 30之第一表面31上，再於其上疊設該模具2〇，亦可先將 該透明感光膠40鋪設於該模具20之粗輪表面22上並填 滿該等凹槽222，再疊設於該透光基板3〇的第一表面31 上，使該模具20之粗糙表面22尖端頂抵於該透光基板 30之第一表面31。另外’該透明電極層％背電極層可由 如氧化銦錫（ITO )製成之透明導電性氧化物 (transparent conductive oxide，TCO)或金屬薄膜材料所 製成，該背電極層70可由具有低阻值、高導電度的金屬 材料所製成；而且，該透明電極層50、本質層6〇及背電 極層70可事先疊設完成’或者’亦可在該透喊光膠4〇 及模具20疊設完畢後進行。 b)使该透明感光膠4G受光而^型出—與該模具2〇 之粗縫表面22具有互補形狀之光散射表面42。詳而言 之’由於PDMS之光透性佳，使光線自該模具2〇上方向 下照射即可使該透明感光膠4G受光；該透明感光膠4〇受 光前係與賴具2G緊㈣合，待其硬化制會與該模具 C)將該模具20自該光散射表面42取下。如此-=第―圖心’該光電轉換元件⑺即製作完成，其 係為㈣模具Μ之祕表面η神而成之光散夺 条㈣，具有多數個分別與該等_ 222互補之呈45茂 角的鋸齒422，該等链告尸 * 轉齒422料勻且密集地分佈，使詞 月* 42不具有平坦處’光線通過該光散射表® 201230374 42之霧化率高，因此該光電轉換元件1〇之光電轉換效率 十分良好。 值得一提的是，該光電轉換元件1〇之光散射表面42 的鑛齒422角度並不以45度為限，如第三圖及第四圖所 不’本發明亦可藉由各該凹槽222之夾角為90度的模具 20轉印該光散射表面42，使得該光散射表面42的鋸齒 422角度係呈90度，如此一來，如第五圖所示，光線通 過該光散射表面42之霧化率會更高。又，如第六圖所 示’不論該光電轉換元件10之光散射表面42的鋸齒422 角度為45度或90度，其產生之電流密度都較習用光電轉 換元件所產生之電流密度大。 另外，如第七圖所示，本發明一第二較佳實施例更提 供另一光電轉換元件80，其透明電極層90具有一與該本 質層60連接之起伏表面92，該起伏表面92具有複數個 圓弧形凹槽922，可使光線通過時再度產生散射，以提升 進入該本質層60之光線的霧化率，進而提高該光電轉換 元件80之光電轉換效率。詳而言之，如第八圖所示，嗜 透明電極層90之製作方法係先於該透光基板3〇之第二^ 面32上平坦地鋪設一層氧化銦錫，再雷射雕刻出該等凹 槽922，以形成該起伏表面92 ;之後，再於該起伏表面 92上依序鋪設-層⑦及-層金屬，以成型出該本質層 及背電極層7G(如第九圖所示），即可使該本質層二斑 該透明電極層90連接之表面的形狀係與該起伏表面％’互 補。如第十_示，本實施例巾具有該起伏表面％之光 :轉換元件80所 … &供之光電轉換元之電〃,L达度係較第一較佳實施例所 實該光電轉換元件8 1G所產生之電流密度大，因而可證 最後，必須〇具有較高之光電轉換效率。 的構成元件，僅‘說明’本發明於前揭實施例中所揭露 —·、、、牛例說明，並非用來限制本案之範圍， 其他等效元件的替代或變化，亦應為本案之帽專利範圈 所涵蓋。 201230374 【圖式簡單說明】 第一圖及第二圖為本發明一第一較佳實施例所提供之 矽薄膜太陽能電池之光電轉換元件的製作方法之示意圖， 係顯示該元件具有多數呈45度角之鋸齒的態樣； 第二圖及第四圖為本發明該第一較佳實施例所提供之 矽薄膜太陽能電池之光電轉換元件的製作方法之示意圖， 係te示該元件具有多數呈90度角之鋸齒的態樣； 第五圖為光線通過本發明該第一較佳實施例所提供之 光電轉換元件之霧化率相對於波長的曲線圖； 第六圖為光線通過本發明該第一較佳實施例所提供之 光電轉換元件所產生之電流密度相對於電壓的曲線圖； 第七圖為本發明一第二較佳實施例所提供之矽薄膜太 陽能電池之光電轉換元件的示意圖； 第八圖及第九圖為本發明該第二較佳實施例所提供之 石夕薄膜太陽能電池之光電轉換S件的製作方法之示意圖； 以及 第十圖係類同於第六圖，惟其中更顯示光線通過本發 明該第二較佳實施例所提供的光電轉換元件所產生之電流 密度相對於電壓的曲線。 粗糙表面22 【主要元件符號說明】 光電轉換元件10 模具20 凹槽222 201230374 透光基板30 第二表面32 透明感光膠40 鋸齒422 透明電極層50 本質層60 背電極層70 光電轉換元件80 透明電極層90 凹槽922 第一表面31 光散射表面42 起伏表面92201230374 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a solar cell which is too steep and is related to the solar cell, and particularly relates to a solar cell energy conversion efficiency of a solar cell b battery. The method of making photoelectric conversion components.尤电 [Prior Art] The traditional solar cell is a flat-type single-material or polycrystalline (four) solar moon cell, in which the brittleness of the stone-like substrate makes the substrate wafer have a certain thickness condition, so that the substrate material is occupied. A large amount of cost to solar cells; therefore, the Aussie thin film solar cell based on amorphous (us) (a), or microcrystallme siliCon, can grow thin film on glass. The characteristics, coupled with the photoelectric conversion material itself, the absorption of the visible spectrum is stronger than that of the single crystal or polycrystalline solar cell, and the advantage of being thinner and thinner is gradually taken seriously by the industries of various countries, but the disadvantage of Lu λ lies in The light f conversion efficiency is not as good as that of single crystal (four) multi (four) solar cells. Therefore, in the case of abundant materials and easy materials, the monocrystalline or polycrystalline solar cells are still the mainstream. In the experimental stage of the current thin film solar cell, the photoelectric conversion element is sequentially stacked on a glass substrate, a transparent electrode layer mainly made of transparent conductive oxide (TCO) material, and a material. It is an intrinsic layer of amorphous germanium or microcrystalline germanium, and an opaque electrode layer made of indium (A1) or other metal to generate light by photoelectric conversion when incident on the transparent electrode layer and passing through the intrinsic layer. In order to increase the 201230374 == rate, the transparent electrode layer is usually formed to have a light picking structure. In detail, the lower surface of the transparent electrode layer is treated so that the / ^ will be atomized due to the production process. Increasing the length of light and the residence time of the light, increasing the amount of light absorbed by the intrinsic layer into electricity = the amount produced, so the light scattering structure can also be called the optical storage structure of the solar cell of the optical storage company. Eve or more solar cells, riding the light _ find conversion (four), that is, Shi Xi or polycrystalline hybrid structure, by the side or crystal growth method to produce a positive gold word ^ or reverse pyramid type material storage structure, and then the light surface (4) The electrode layer is stacked on the surface of the mineral film, so that it is applied to the amorphous 7 or microcrystalline 7 solar cell, which is formed on the light-receiving glass substrate, and the light-storage structure is formed according to the material properties of the transparent electrode layer. Stacked up. For example, a photoelectric conversion element of a conventional thin film solar cell has a transparent electrode layer on a glass substrate and is grown in a long crystal form—a zigzag-like light scattering structure made of zinc oxide (Zn〇); Limited to the zinc oxide/square stacked crystal structure, the microscopic surface of the light scattering structure is actually a protrusion of a square column shape, and is relatively difficult to be formed into a zigzag tip, and is particularly difficult to produce uniformity by crystal growth. The pyramid structure, so once the solar cell is fabricated, the bottom of the transparent electrode layer is a highly irregular scattering structure from the direction of the light receiving surface of the glass substrate, and the bottom of the zigzag recess is slightly flat, so the bottom The reflection defect caused its photoelectric conversion efficiency to be less than expected. Moreover, the photoelectric conversion of another type of tantalum thin film solar cell is used in 201230374. The element is: 'the transparent electrode layer is laid on the glass substrate first—the planar single aa layer of the oxidized word' and then the difficult stage of the single crystal layer (10) Shooting structure; however, in order to avoid the proper conductive thickness of the transition electrode layer, it is necessary to control the formation of the ore-like shape, and the spacers (10) are separated by a distance - a considerable distance, so from the direction of the light-receiving surface of the glass substrate. The bottom of the pit of the ore tooth is more flat 'meaning that the degree of saccharification of the light scattering structure is smaller', so that the atomization rate of the light is low, so the efficiency of the photoelectric conversion element is still not satisfactory. In addition, the conductivity of the transparent electrode layer formed by zinc oxide alone is not good, and the additional electrical conductivity of the ageing material is required to increase the conductivity of the thin film solar cell. In other words, the photoelectric conversion elements of the conventional Shishi thin film solar cells still have their inadequacies and need to be improved. SUMMARY OF THE INVENTION In view of the above-mentioned deficiencies, the main object of the present invention is to provide a method for fabricating a photoelectric conversion device for a film solar cell, which is not only simple but also enhances the photoelectric conversion efficiency of a solar cell. In order to achieve the above object, the method for fabricating the photoelectric conversion element of the Shi Xi thin film solar cell provided by the present invention comprises the steps of: a) between a rough sugar surface of the mold and a surface of the transparent substrate A transparent photosensitive adhesive is disposed, the transparent substrate has a transparent electrode layer sequentially stacked on a second surface opposite to the first surface, and a material is an amorphous silicon φ (microcrystalline silicon) Layer 'and-back electrode layer; b) subjecting the transparent photoresist to light and 201230374 shaping a light-scattering surface having a complementary shape to the rough surface of the mold; and C) removing the mold from the light-scattering surface. Thereby, the photoelectric conversion element is not only easy to fabricate, but the shape of the light scattering surface can be uniformly and densely undulated to enhance the atomization rate of light passing through the light scattering surface, thereby improving the photoelectric conversion efficiency of the tantalum thin film solar cell. The detailed construction, characteristics, assembly or use of the method for fabricating the photoelectric conversion element of the tantalum thin film solar cell provided by the present invention will be described in the detailed description of the subsequent embodiments. However, it should be understood by those of ordinary skill in the art that the present invention is not to be construed as limiting the scope of the invention. The technical content and features of the present invention will be described in detail below with reference to the accompanying drawings, wherein: FIG. 1 and FIG. 2 are a first preferred embodiment of the present invention. A schematic diagram of a method for fabricating a photoelectric conversion element of a thin film solar cell is provided, which shows that the element has a plurality of sawtooth angles of 45 degrees; the third and fourth figures are the first preferred embodiment of the present invention. A schematic diagram of a method for fabricating a photoelectric conversion element of a thin film solar cell is provided, which shows that the element has a plurality of sawtooth angles at an angle of 90 degrees; and the fifth figure is a light provided by the first preferred embodiment of the present invention. a graph of the atomization rate of the photoelectric conversion element with respect to the wavelength; the sixth figure is a graph of the current density versus voltage generated by the 201230374 photoelectric conversion element provided by the first preferred embodiment of the present invention; FIG. 8 is a schematic view showing a photoelectric conversion element of a thin film solar cell according to a second preferred embodiment of the present invention; FIG. 8 and FIG. A schematic diagram of a method of fabricating a photoelectric conversion element of a thin tantalum solar cell provided by a preferred embodiment; and a tenth figure is similar to the sixth figure 'but only showing light through the second preferred embodiment of the present invention The current density of the provided photoelectric conversion element is plotted against the voltage. The Applicant first describes the same or similar elements or structural features in the embodiments and the following description. Referring to the first and second figures, a method for fabricating the photoelectric conversion element 10 of a thin film solar cell according to a first preferred embodiment of the present invention comprises the following steps: a) as shown in the first figure, A transparent photosensitive adhesive 40 is interposed between a rough surface 22 of one of the molds 20 and a first surface 31 of a transparent substrate 30. The second surface 32 of the transparent substrate 30 opposite to the first surface 31 A transparent electrode layer 50, an intrinsic layer 60 made of tantalum, and a back electrode layer 70 are sequentially stacked. In detail, the mold 20 is a microstructured mold made of polydimethyl siloxane (PDMS), so the rough surface 22 can be made jagged and uniformly and densely distributed. a plurality of V-shaped grooves 222, and each of the grooves 222 has a plane with an angle of 45 degrees; the transparent photosensitive adhesive 40 is made of a material such as UV glue which can be cured by 201230374, and can be laid first. On the first surface 31 of the transparent substrate 30, the mold 2 is stacked thereon, and the transparent photoresist 40 may be first laid on the rough wheel surface 22 of the mold 20 and filled with the concave surface. The groove 222 is further stacked on the first surface 31 of the transparent substrate 3 such that the tip end of the rough surface 22 of the mold 20 abuts against the first surface 31 of the transparent substrate 30. In addition, the transparent electrode layer % back electrode layer may be made of a transparent conductive oxide (TCO) or a metal thin film material made of indium tin oxide (ITO), and the back electrode layer 70 may have a low resistance. The transparent electrode layer 50, the intrinsic layer 6 〇 and the back electrode layer 70 may be stacked in advance to complete the 'or' or the squeegee 4 and the mold 20 After the stacking is completed. b) The transparent photosensitive adhesive 4G is light-received-having a light-scattering surface 42 having a complementary shape with the rough surface 22 of the mold 2〇. In detail, due to the good light transmittance of PDMS, the transparent photosensitive adhesive 4G can be lighted by illuminating the light from above the mold 2; the transparent photosensitive adhesive 4 is tightly coupled with the sling 2G. The mold 20 is removed from the light-scattering surface 42 by the hardening process and the mold C). Thus -=第图图心' The photoelectric conversion element (7) is completed, which is a light-scattering strip (4) formed by the (4) the secret surface of the mold, which has a plurality of 45 complementary to the _ 222 respectively. The horns of the horns 422, the chain snails * the teeth 422 are evenly and densely distributed, so that the word month * 42 does not have a flat place 'light rays through the light scattering table ® 201230374 42 high atomization rate, so the photoelectric The photoelectric conversion efficiency of the conversion element 1 is very good. It is to be noted that the angle of the horn 422 of the light-scattering surface 42 of the photoelectric conversion element 1 is not limited to 45 degrees, as in the third and fourth figures, the present invention may also be The mold 20 of the slot 222 having an angle of 90 degrees transfers the light scattering surface 42 such that the angle of the sawtooth 422 of the light scattering surface 42 is 90 degrees. Thus, as shown in the fifth figure, the light passes through the light scattering surface. The atomization rate of 42 will be higher. Further, as shown in the sixth figure, the sawtooth 422 of the photoelectric conversion element 10 has an angle of 45 degrees or 90 degrees, which produces a current density greater than that of the conventional photoelectric conversion element. In addition, as shown in the seventh embodiment, a second preferred embodiment of the present invention further provides another photoelectric conversion element 80 having a transparent electrode layer 90 having an undulating surface 92 connected to the intrinsic layer 60, the undulating surface 92 having A plurality of circular arc-shaped grooves 922 can re-scatter light when passing light to increase the atomization rate of the light entering the intrinsic layer 60, thereby improving the photoelectric conversion efficiency of the photoelectric conversion element 80. In detail, as shown in the eighth figure, the transparent electrode layer 90 is formed by laying a layer of indium tin oxide on the second surface 32 of the transparent substrate 3, and then laser-engraving the The groove 922 is formed to form the undulating surface 92; then, the layer 7 and the layer metal are sequentially laid on the undulating surface 92 to form the intrinsic layer and the back electrode layer 7G (as shown in FIG. 9). The shape of the surface of the intrinsic layer which is connected to the transparent electrode layer 90 is complementary to the undulating surface %'. As shown in the tenth aspect, the towel of the embodiment has the light of the undulating surface %: the conversion element 80 is ... and the photoelectric conversion element is provided, and the L degree is compared with the photoelectric conversion of the first preferred embodiment. The current density generated by the component 8 1G is large, so that it can be proved that the photoelectric conversion efficiency must be high. The constituent elements of the present invention are only described and described in the foregoing embodiments. The description of the invention is not intended to limit the scope of the present invention. The substitution or variation of other equivalent components should also be the cap of the present invention. Covered by the patent circle. 201230374 [Simplified Schematic] FIG. 1 and FIG. 2 are schematic diagrams showing a method for fabricating a photoelectric conversion element of a thin film solar cell according to a first preferred embodiment of the present invention, which shows that the element has a majority of 45 degrees. FIG. 2 is a schematic view showing a method of fabricating a photoelectric conversion element of a tantalum thin film solar cell according to the first preferred embodiment of the present invention, showing that the component has a majority of 90 The fifth figure is a graph of the atomization rate of the light-converting element provided by the first preferred embodiment of the present invention with respect to the wavelength; the sixth figure is the light passing through the present invention. A graph of a current density generated by a photoelectric conversion element according to a preferred embodiment versus a voltage; and a seventh diagram of a photoelectric conversion element of a thin film solar cell according to a second preferred embodiment of the present invention; 8 and 9 are schematic views showing a method of fabricating a photoelectric conversion S piece of a Shi Xi thin film solar cell according to the second preferred embodiment of the present invention; FIG ten lines similar to the sixth view shows the current density but being more of the generated light by the photoelectric conversion element of the present invention provides a second preferred embodiment of the voltage curve with respect to. Rough surface 22 [Major component symbol description] Photoelectric conversion element 10 Mold 20 Groove 222 201230374 Transmissive substrate 30 Second surface 32 Transparent photosensitive adhesive 40 Serrated 422 Transparent electrode layer 50 Intrinsic layer 60 Back electrode layer 70 Photoelectric conversion element 80 Transparent electrode Layer 90 groove 922 first surface 31 light scattering surface 42 relief surface 92