TW201230376A - Light-confining integrating method of thin film solar cell and structure thereof - Google Patents

Abstract

A light-confining integrating method of a thin film solar cell and a structure thereof , which utilizes plasma treatment to form a composite light-confining nano material having a light absorption layer for being integrated into a light incident layer, an intermediate layer or a shaded layer of a thin-film solar cell. In this way, nano-particles can be embedded into a transparent conductive film by utilizing a sandwich structure. A gradually varied refraction structure is simultaneously provided, and light holding time in the light absorption layer is increased by high refraction efficiency and strong near field optical effect of the surface plasma nano-structure, so as to increase light current of the elements and improve efficiency of optoelectronic elements, and simultaneously reduce consumption of thin film material, such that the present invention has advantages of reducing defect of semiconductor light absorption layer and damage in the thin film properties, and is capable of increasing anti-reflection efficiency of incident light, and improving integration of the optoelectronic elements as well as increasing long-term irradiation stability of the optoelectronic elements.

Description

201230376 VI. Description of the invention: [Technical field to which the invention pertains] & The present invention relates to a method for integrating light confinement of a thin solar cell and its structure, particularly to a composite of a light absorbing layer formed by plasma treatment The light-limited nano-material can be integrated into the light-emitting surface, the intermediate layer and the backlight surface of the thin film solar cell, and the structure thereof. [Prior Art] With the development of low-cost thin film solar cells, thin film solar cells have become the trend of solar cell development in the future; however, because the thickness of the absorption layer of thin film solar cells is much smaller than that of spar (( ^_This Si) solar cell, so it shows that the solar spectrum absorption response is weak, resulting in lowering its photoelectric conversion efficiency, and its thin absorption layer also causes the traditional surface texturing technology to be applied to thin film solar cells. LightTrapping has been adopted, so the novel light-trapping technology has attracted considerable attention in recent years. Nano-particles have optical scattering characteristics, near-field electric field enhancement effects and carrier injection and other optical response characteristics, which can effectively Improve light path and light utilization to increase the conversion efficiency of solar cells. However, in the process integration part, nano particles will generate additional interface defects, and may destroy the characteristics of the absorption layer during the process, so the solar energy containing nano particle technology The conversion efficiency of the battery is usually not easy to effectively improve. And dielectric nanoparticle materials have been widely used in the field of light-emitting diodes, chemical and biological sensing' and the nanoparticle materials have been quite successful in preparation and sensing, and the material properties exhibited are quite diverse. Its surface 201230376 surface plasmon light or electromagnetic wave interacts with the free electrons in the metal to produce an electronic charge dense wire back-slit-shaped pick-up pole distance. When the ship is correct, this composite electric water sub-material will produce extreme Extinction coefficient (Extjncti〇n) and high-density strong near-field optical properties. Its special optical properties. According to Mie, s scattering theory, the extinction coefficient of large-sized metal particles mainly comes from the heat loss caused by the scattering absorption of particles. It is much lower than the contribution of scattering; while the extinction coefficient of small-sized metal particles mainly comes from the near-field silk effect of the sister Wei, which is related to the material, size and micro of the metal particles, which will make the light travel direction. Due to the different wavelengths, the scattering behavior of the non-precision is generated; while the strong near-field optical characteristics are related to the size of the metal particles and the surrounding environment, thus effectively controlling the metal particles and The configuration of the surrounding environment will contribute to the application of thin-film solar cell light confinement technology. In recent years, a considerable number of nano-materials have been combined with nano-structure technology, or patents for material/structure-integrated thin-film solar cells. However, the conversion efficiency and the proportion of increase are not high, mainly due to the fact that the direct integration of the nanoparticles with the original process may cause defects between the nanoparticle/semiconductor absorption layer or cause damage to the original film properties, as described below: In the United States Patent No. 2007/0289623, the invention discloses a photovoltaic element (Plasm0njc ph〇t〇) having a surface electropolymerization effect, as shown in Fig. 7. It is used above the light absorbing layer 4 The aluminum (A1) and copper (Cu) nanoparticle plasma resonance scattering layer 4丄 and the incident light generate a surface light coupling waveguide (Light Coupling Waveguide) effect, which increases the scattering of the incident light, thereby increasing the absorption of the absorption layer 4 To enhance the photocurrent response. However, in this technique, A丨 and Cu nanoparticle 4 1 1 are placed between the interface of the absorption layer 40 and the air, due to the gossip and (: 11 in the air 201230376 easy to metal in the metal surface radon into alumina (A1203) and copper oxide (CuO), thus reducing the effect of coupling the incident light to the metal particles. In 2009, ITRI published a patent for the invention of "Laminated thin film photovoltaic device with plasmon structure and use of thesame" in the Republic of China Patent No. 097120261. Figure 8 shows. The nano metal particles 5 〇1 of i〇〇nm~2〇〇nm are enemies with a low band gap photoelectric conversion layer 5 1 and a high band gap photoelectric conversion layer 5 2 . Between the use of the laminated thin film light energy element 5 having the plasmonic structure layer 50 can be reduced

The overall thickness of the component increases the rate of photocurrent generation. The laminated thin film light energy element 50 is a thin film of amorphous germanium film having a higher band gap (ie, a high band gap photoelectric conversion layer 52) and a microcrystalline germanium or germanium alloy film having a lower band gap (ie, The low band gap photoelectric conversion layer 51) is formed by overlapping. However, such a sandwich component structure is prone to two types of problems, one of which is the preparation of nano metal particles assembled on a low bandgap photoelectric conversion layer, such as thin film annealing nucleation (X]jennalAnneal), nano Template (Aluminum Anode Oxide, AAO), Spin φ Coating, Nano-imprint and Deep UV lithography, and Focus Ion Bean (FIB) Etc., when the photoelectric conversion layer is evacuated from the vacuum and is in contact with the above technology, considerable surface defects will be generated; the second is that when the plasma technology deposits the tantalum film on the surface of the nano metal particles, it is extremely susceptible to plasma. Ion bombardment causes surface damage of the nano metal particles. Therefore, both of the above factors will seriously affect the photoelectric conversion efficiency of the components. Invented by Edward T. Yu and Daniel Derkacs, in the United States Patent No. 2009/0250110, a "Forward scattering nanoparticle enhancement method 201230376 and photodetector device" The patent is shown in Figure 9. The nano gold particles (100 nm) 6 〇 or the SiO 2 particles (15 〇 nm) are electrostatically deposited on the transparent oxide layer 61 of indium tin 〇xide (IT〇). The transparent oxide layer 6 1 is an n_i_p stacked layer amorphous column a Si:H) 6 2 ; and, by the solid line on the right side in the figure, the analysis curve of adding nano-gold (touching nm) particles is known, and it is shown in FIG. (4) (4) Using the Scattering effect of light scattering, the photocurrent is increased from 6 6 mA/cm 2 to 7 2 Focal 2, and the photoelectric conversion efficiency is increased from 2.77% to 3%. However, this patent can improve the defect between the interface of the amorphous layer and the transparent oxide layer 61, but it still solves the problem of contact between the metal electrode and the nanoparticle. In 2010, C. L. Renzetti and M. Vitaie et al. published "Photovoltaic Special Battery (10). Tovolta 丨 (10) 丨丨)" in US Patent No. 2〇1〇/〇_398, as shown in Figure 10. a multi-layered nano-leveling layer (phQt_sitive • and a mixed layer of semiconductor material, if not a light absorbing material)

Layer), the drum is embedded in the doped and boron-doped Shixi film, and the structure still has the shortcomings of the above-mentioned Republic of China patent. In addition, the multi-layered nanoparticle material is mixed in the semiconductor material to form a new-green layer structure (as shown in Cai (4)). The material is not only conducive to photocurrent matching. It creates considerable problems, and even reduces the efficiency of photoelectric conversion.

201230376 The invention of the reliability of sexual and long-term illumination is necessary. SUMMARY OF THE INVENTION The main object of the present invention is to overcome the above-mentioned problems encountered in the prior art and to provide a composite optical confinement nano material having a light-absorbing (four) miscellaneous processing axis, which can be integrated into a _ Tai battery The preparation method and structure of the smooth, intermediate layer and back surface of the person.

In order to achieve the above purpose, the present invention relates to a thin-film solar cell light confinement integration method and a structure thereof, which are prepared for integration into a light-emitting surface of a thin film solar cell, an intermediate layer, and a composite light-lighting material of a backlight. The method and structure provide a substrate 'and sequentially form a first transparent conductive oxide layer on the substrate, a first light absorbing layer formed by the ray treatment, a second transparent conductive oxide layer, and a metal grating, and In the process of preparing the above-mentioned various layers, the process further comprises forming a plasmonic nano-structure layer, wherein: When the surface of the solar cell is light, the plasmonic nanostructure layer is axially on the second transparent conductive oxide layer, and the electropolymer S (four) is electrically oxidized. Forming a back metal reflective layer between the substrate and the electro-oxidation layer to complete a composite photonic nanomaterial at a person's glossy surface of the thin film solar cell;卜j on the absorbing layer, and the bribe nanostructure is formed into a fourth transparent conductive oxide layer and a second light absorbing layer, and a layer between the substrate and the L-electro-oxidation layer is completed. People to $ and "metal reflection limited nano material; Γ and city battery in the financial complex of the complex light 7 201230376 child too ^ L La solar battery back wire scale, the electric cell battery = shouting complex ray镰丝观; "In which 'the above-mentioned plasmonic nano-structure layer includes several nano-particles. f Embodiments 敕 发明 发明 发明 _ 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能

A composite Ϊ-opening method capable of entering the light surface, the middle layer and the backlight surface of the battery, which provides - Wei, and the τ ^ 380 conductive oxide layer on the substrate (Transparent C-ve Oxide cup M, _ grid, and In (10) the above-mentioned layers, the plasmonic nanostructure is further encapsulated, which makes: a person who is less integrated into the solar cell, and stores the electropolymer:::: layer formation Forming a third transparent conductive oxide layer on the second transparent conductive oxide layer, and forming a third transparent conductive oxide layer on the substrate, and forming a back-metal reflective layer on the substrate and the surface of the conductive oxide layer. Completion of the composite light-limited nano-material of the sigma film solar cell at the human wire; = when the intermediate layer of the solar cell of the solar cell is to be integrated, the electricity is concentrated: the structural layer is formed in the first light absorption On the layer, and forming a fourth turn conductive oxide layer and a "second light absorbing layer", and ίι/科-(4) between the conductive layers and the back metal reflection a χ疋a composite nanomaterial integrated into the middle layer of the thin film solar cell; The back silk tree of the thinner solar cell is formed on the substrate by the 201230376 sub-nano structure layer to complete a composite optical confinement nano material integrated into the backlight surface of the thin film solar cell; Referring to the "Diner 1", it is a schematic diagram of the integration process of the thin-film solar cell of the composite optical nano-material of the present invention. As shown in the figure: the present invention is integrated into the smooth surface of the thin solar cell battery. For example, the preparation process of the composite aperture-limited nanomaterial includes at least the following steps: (A) providing a substrate and forming a back metal reflective layer 1 and a first transparent conductive oxide layer (Transparent Conductive Oxide). • TC 〇) 12 on the substrate 1 ;; ' (B) using plasma treatment to the county - the first light absorbing layer i 3 on the first transparent conductive oxide layer 12; (C) using a mask to form a a second transparent conductive oxide layer 4 on the first light absorbing layer 13;

(D) forming a plasmonic nanostructure layer (fat (10) also Nanostructure) i 5 on the second transparent conductive oxide layer 4, wherein the electric pad nanostructure layer 15 includes a plurality of nano greens i 5 i ; person (E) uses the mask to form a third transparent conductive oxide layer i 6 on the plasmonic nanostructure layer 15; the person (F) uses the third transparent conductive oxide layer 16 as a mask a cover, money engraving the first light absorbing layer 13; and conducting oxygen = using another "mask to form a metal first grid 17 to the third transparent, for example, an organic polymer or steel sheet material 4 and 16 series may be selected from oxygen The substrate 10 is a non-transparent substrate, and may also be a transparent substrate such as glass. Each of the transparent conductive oxide layers 12 201230376 is made of copper tin (IT0), zinc oxide (ZnO), oxidized button (AZO or ΖηΟ: Α1) or A material of a fluorine-doped tin dioxide (Sn〇2: F). The above-mentioned back metal reflective layer 11 is a high-reflectance metal film which may be selected from aluminum (Al) or silver (Ag). 1 3 is a stack of amorphous yttrium (a-Si:H) of a nip or pi-η. The above-mentioned nanoparticle 1 5 1 is a metal nanoparticle (Metalparticles) material. The material 'may be selected from gold (Au) or silver; or may be a dielectric material of Dielectric parties, which may be selected from the group consisting of sulphur dioxide (Si〇2), nitrite (private wind) or one gas. Huayu (Ti〇2). Using the method proposed by the present invention, the method for preparing nanoparticle assembly structure, whether using film annealing nucleation (Xhermal, nano template ^Alumumm Anode Oxide, AAO), spin coating (Spin c〇ating), nanotransfer (Nan0-imprint), deep ultraviolet lithography (by printing ^ U ^ography) or focused ion beam method (F〇cusi〇nBean FiB), can be: general semiconductor The metal stalk (Sputter) used in the integrated circuit process, and the two different "electrical coefficient transparent conductive layer, the thin film solar cell light-reduction method" can be applied to the heterogeneous structure in addition to the Shixi thin film solar cell. B-day solar i battery 'organic Wei solar cell and thin film solar ^ battery, improve scaly current and improve filling, high solar spectrum utilization and photoelectric conversion efficiency. Please refer to the "Figure 2" for the first time, which is the first part of the invention - the integrated structure t diagram is not tied to the thin photo field battery integration process of the composite photo-touch nano-material of Figure 1. The integrated structure includes a base magic 0, a back metal reflective layer disposed on the substrate 10! i, - the first-transfer electro-oxidation layer i 2 disposed on the back metal reflective layer 11 of the 201230376 is formed by processing and disposed on the first transparent conductive layer i 2 on the second absorption layer! 3, a second transparent 3 oxide layer 14 disposed on the first light absorbing layer i 3, a nanostructure layer 15 5 disposed on the second conductive oxide layer i 3 and the electricity The layer i 5 includes a plurality of age-old particles 516, a third conductive oxide layer 16 disposed on the electrode structure layer i 5, and a third transparent conductive oxide layer 丄Metal grating 17 on it. among them:

When assembling large-sized metal na[iota]ns and dielectric na[iota]ns on non-transparent substrates (such as organic polymers or steel plate materials), the back metal layers (such as high reflectivity metal films such as Shao or silver) are sequentially fabricated. Transparent conductive oxide layer and light absorbing layer (nip solar cell material), the composite light ship nano material can be a layer of solar cells; small-sized wire particles are transparent on the base t (such as glass), and then transparently Conductive layer and light absorbing layer (p_i_n^ cation battery material) 'This composite light-limited nano-material can be used as a surface plasma layer of solar cells. '

—Looking at “Figure 3” is the second integrated structure of the invention: Intent. As shown in the ®: is the first of the composite silk-restricted materials of the present invention: a structure comprising: a substrate 1 gi placed on the substrate i Qa = a poly-nano-structure layer i 5a' and the electricity The poly-nano-green layer i 5a includes a number 2 of records 15 a, a transparent conductive oxide layer 12 2 disposed on the electrical adult nanostructure layer 15 5 , and is disposed in the first via a plasma treatment First, the first transparent conductive oxide layer i 4a disposed on the first light-transmissive layer 13a, and the second transparent conductive layer disposed on the first light-transmissive layer 13a The metal grating 1 ?a on the oxide layer 14a. 11 201230376 This embodiment integrates the composite diaphragm-nano-material into the bottom layer of the _stack layer a-Si:H, regardless of the fine metal nephew or the dielectric nap, which can increase the back of the light. Increasing the first-path, increasing the light staying in the light-absorbing layer time (longitudinal direction); and this week, the nanostructure also produces an evanescent wave in the lateral direction of another surface plasmon (Evana_ee)

Wave) can increase the time that lateral light waves stay in the light absorbing layer. Please refer to Fig. 4, which is a schematic diagram of the third integrated structure of the present invention. The third φ 5 K structure of the composite optical confinement material of the present invention comprises a substrate 1 〇b, a back metal reflective layer 1 lb disposed on the substrate 1 Ob, and disposed thereon. The first transparent conductive oxide layer 12b on the back metal reflective layer i lb is formed by electropolymerization and disposed on the first transparent conductive oxide layer! a first light absorbing layer 丄3b on 2b, a substantially sub-green layer i 5b disposed on the first-grain layer 13b, and the % slurry nanostructure layer 15b includes a plurality of nano particles 15ib, a second transparent conductive oxide layer 4b disposed on the electro-poly nanostructure layer 15b, and a second light absorbing layer disposed on the second transparent conductive oxide layer i4b. a third transparent conductive oxide layer 16b disposed on the second light absorbing layer i 8b and a metal grating 17b disposed on the third transparent conductive oxide layer [6b]. In this embodiment, small-sized metal nanoparticles are embedded in the middle of the two light-absorbing layers 13b and 18b, and the quantum well confinement effect of the quantum dots can generate more carriers and quantum by the impact free mechanism. The micro-bands formed by the dots enhance the carrier of the carrier, forming a multi-level structure similar to the multiple junctions of the stacked solar cells, and enhancing the full-spectrum solar absorption and carrier transport collection. 12 201230376 Referring to "Fig. 5 and Fig. 6", the schematic diagram of the electron microscopy of the second integrated structure of the present invention and the performance test of the second integrated structure of the present invention are shown in the figure. For example, the composite light-restricted nano-material of the embodiment has a composite optical nano-material in which the plasmonic nano-structure layer 15 5 can be directly formed on the substrate. The transparent conductive oxide layer stack of the upper interlayer is not required, but the present invention can also further sandwich the nephew 丄5 1 a ' as shown in FIG. 5 with the second transparent conductive oxide layer 丨 6a. Figure 6 shows the number of experiments in the present invention using Sn〇2:F/Au/Zn〇:A1 composite optical confinement nanomaterials applied to p_i_n stacked amorphous germanium solar cells.

according to. The invention self-assembles 5 nm gold nanoparticles into the thick-chained Sn〇2:F and ΖηΟ:Α1 interfaces, and presents the addition of gold nanoparticles in the figure at 14〇〇c and 9〇〇c respectively. The comparison of particle efficiency curves 2 and 3 with the unaffected Chennai efficiency curve 2 a, 3 a shows that the efficiency of adding gold nanoparticles at 14 〇〇c is 85%, and the efficiency of not adding gold nanoparticles is It is 8 〇%; and at 90 〇 (: the efficiency of adding Jinnai particles is 7.6%), the efficiency of the non-added Jinnai particles is 6 9%. It can be seen that the advantages of the invention and the size of the Chennai are strong. Near-field filament effect, under the optimal coverage of nano-particles, the optical confinement effect can be achieved, thereby increasing the photocurrent density of the solar cell. The method and structure of the invention are effective to overcome the non-interface protection. The surface defects and the plasma ion bombardment cause the surface damage problem of the nanoparticles to be 'not only finer than the light-emitting surface of each of the slanting solar cells, but also have:-gradient refractive index (the refractive index of the foot is 2 3 ; a Si:H refractive index of 4.23) structure, can improve the anti-reflection efficiency of human light; The surface roughening structure has the surface gradual gradation of the lateral direction, increasing the time of 2012 2012376 in the light absorbing layer; having multiple improvements in photo-electrical integration: from the touch of reliability ΐ · ί _Dielectric properties, adjustable i-face lack of fe' complement can improve the electrical dyeing and destruction of the components, but also can be multi-faceted from the whole person to the sub-set of the dirty intermediate layer and the back wire, touched ^ 2 = (4) The entrance surface of the pool, the integration of the components (4) The transmission of the (4) glutinous rice material; the Γ 核 nuclear (10) - the phase domain energy battery wire limit integration ... structure, can effectively improve the various disadvantages of f, for the sandwich structure , will be rich in materials, Lang miscellaneous - (four) type refractive index

The high scattering efficiency of the Jt/face A pulp filament structure and the optical effect of the sharp field t increase the light staying in the ray layer of the light, which is called the search of the water, and the scale of the electric reading is achieved. It has the advantages of reducing the damage of the semiconductor absorption layer and the characteristic damage, and can improve the integration of the component and increase the long-term illumination stability of the photovoltaic element when the anti-reflection effect of the incident light is improved, thereby making the invention The lack of progress, more practical, and more in line with the system, has indeed met the requirements of the invention of special funds, and filed a patent application according to law. However, the above is only a better practice of the present invention, and it cannot be limited to the scope of the present invention; therefore, the patent scope and the gross month are required in accordance with the present invention. The simple equivalent changes and modifications made by Neigu in 03 shall remain within the scope of the patents of this invention. 14 201230376 [Simple description of the diagram] Fig. 1 is a schematic diagram showing the integration process of the thin-film solar cell of the composite optical confinement nano material of the present invention. Figure 2 is a schematic view of the first integrated structure of the present invention. Figure 3 is a schematic view of the second integrated structure of the present invention. Figure 4 is a schematic view of the third integrated structure of the present invention. Figure 5 is a schematic view of an electron microscopy of a second integrated structure of the present invention. Figure 6 is a schematic diagram showing the performance test of the second integrated structure of the present invention. Figure 7 is a schematic diagram of a photovoltaic component that uses the surface effect. Fig. 8 is a schematic view showing a laminated thin film light energy element having an electropolymer structure. Figure 9, is a schematic diagram of a conventional photodetector device. Figure 10 is a schematic diagram of a conventional photovoltaic cell. [Description of main component symbols] (part of the present invention)

Substrate 10, 10a, back metal reflective layer 1 1 , 1 2, 1 2a, 1 2b 3a, 1 3b 4, 1 4a, 1 4b, 1 5a, 1 5b la, 1 5 lb 6 , 16a, 1 6b first transparent conductive oxide layer 1 first light absorbing layer 13, 1 second transparent conductive oxide layer i plasmonic nanostructure layer 15 nanoparticle 151, i 5 dian two transparent conductive oxide layer 1 15 201230376 metal grating 1 7、1 7a, 1 7b Second light absorbing layer 1 8b Adding gold nanoparticle particle efficiency curve 2, 3 No gold nanoparticle particle efficiency curve 2a, 3a (conventional part) Light absorbing layer 40 0 aluminum and copper nano Particle plasma resonance scattering layer 41 Aluminum and copper nanoparticles 411 Laminated film light energy element 5 Plasma substructure layer 5 0 Nano metal particles 5 01 Low band gap photoelectric conversion layer 51 High band gap photoelectric conversion layer 52 nm Gold particles 60 transparent oxide layer 61 nip stacked layer amorphous 矽 6 2 16

Claims (1)

201230376 VII. Patent application scope: 1. A thin film solar cell optical confinement integration method is a preparation method of a composite optical confinement nano material integrated into a light entrance surface of a thin film solar cell, which comprises at least the following steps: A 1) &amp; for a substrate 'and separately forming a back metal reflective layer and a first transparent conductive oxide layer (TCO) on the substrate; (B 1 ) using plasma treatment to form a first a light absorbing layer on the first transparent conductive oxide layer; (C1) forming a second transparent conductive oxide layer on the first light absorbing layer by using a mask; D1) ^/ into an electric paddle nanostructure layer (piasmonic Nanostructure) on the second transparent conductive oxide layer, wherein the plasmonic nanostructure layer comprises a plurality of nano particles; (E1) forming a third transparent conductive oxide layer on the plasma by using the reticle a sub-nano structure; (F 1 ) etching the first light absorbing layer using the third transparent conductive oxide layer as a mask; and (G 1 ) forming a metal grating in the third by using another mask Transparent electricity Layer on. According to the application of the paste range, the solar cell is limited by the method: t, the base (4) is a non-transparent substrate, and may be an organic polymer or a steel plate material. 2 Please paste the _ domain energy battery described in item 1 to limit the σ where 'the substrate is a transparent substrate and can be a glass. 17 201230376 4. According to the scope of patent application No. 1 - Human H1, 遨 遨 溥 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 ί ί ί ί ί ί ί ί ί ί ί ί 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该匕 Ζ (Ζη〇), oxidized zinc (fine or Ζη〇: Α 1) or doped with a gasified tin (SnO / F) material. 5 mi 财 1 1 敎 敎 能 能 能 能 能 电池 电池 ^ ^ ^ ^ ^ ^ 1 1 1 1 1 1 1 1 1 1 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属6 · According to the method of the patent application scope, the thin-film solar cell photo-reduction method is as described in the above paragraph, and the light absorption layer in the '5 ha is a-spin or pin-shaped a-Si:H stack Floor. 7. The thin film solar energy sightseeing method according to the invention of claim </ RTI> wherein the 'nano particles are metal nanoparticle particles> material may be selected from gold (Au) or silver. 8 · According to the patent, please! The thin solar energy cell photo-integration method according to the invention, wherein the nano particle system is a dielectric nano-particle (7) heart-shaped partides) material, which may be selected from the group consisting of: cerium dioxide (Si〇2), gasification stone eve (Secret 4) or Titanium Dioxide (Ti02). 9 · The thin film solar cell photo-integration method according to the patent application scope of claim 1 'where the plasmonic nanostructure layer is formed by thin film annealing nucleation (Thermal Anneal), nano template (Aluminurn An〇 De 〇xide, AAO), spin coating, N__imprint, Deep UV Lithography or Focus Ion Bean (Fffi). L〇. The thin film solar cell light confinement integration method according to the scope of claim patent is applicable to the surface electric concentrating layer of the solar cell or the back layer 18 201230376 layer. The invention relates to a method for integrating light confinement of a thin film solar cell according to claim 1, wherein the thin film solar cell can be a germanium thin film solar cell, a heterostructure stone solar cell, an organic thin film solar cell and copper. Surface gallium selenide thin film solar cell. 12 thin film solar cell optical confinement integration method is a method for preparing a composite optical confinement nano material integrated into an intermediate layer of a thin solar cell, which comprises at least the following steps: (A 2) providing a substrate and separately Forming a back metal reflective layer and a first transparent conductive oxide layer on the substrate; (B 2 ) processing to form a “first light absorbing layer on the first transparent conductive oxide layer; 2) forming a plasmonic The nanostructure layer is in the first light absorbing layer VIII, the plasmonic nanostructure layer comprises a plurality of nano particles; the ray mask forms a second transparent conductive oxide layer in the electro-transparent electropolymerization process to form a first The second light absorbing layer is formed in the second two-light ray mask - the third transparent conductive material is formed by the oxidant, and the metal grating is used in the third transparent conductive limit The transparent conductive oxide layer of the tin and the yttrium oxide may be selected from the group consisting of copper oxychloride, emulsified or fluorine-doped tin dioxide. 19 201230376 1 Special fiber (4) The thin film solar cell light localization integration method described in the above, wherein the light absorbing layers are - or a non-crystallized stack. 1 5 (4) ^ Application for a patent (4) The solar cell luminescence of the solar cell δ method 'where' is the metal nanoparticle material, which can be transported from gold or silver. 1 6. According to the application of the paste of the thinner solar cell light, as described in item i 2, the square f 'where the nanoparticle is a dielectric nanoparticle material, which may be selected from the group consisting of cerium oxide and tantalum nitride. Or titanium dioxide. 1 7 . - _ solar cell light confinement integration method, material - composite light confinement nano-material at the backlight surface of the whole person to the thin pool 29: preparation method, which at least comprises the following steps: jA 3) provide - substrate, and Forming a plasmonic nanostructure layer t first through the electrical oxide layer on the job board, shooting the Lai nano structure layer including a plurality of nano particles; (B 3) processing the slurry to form - the first a light absorbing layer on the first transparent conductive oxide layer; (C3) _-mask forming - a second transparent conductive oxide layer on the first light absorbing layer; and (D3) forming using a different mask - A metal grating is on the second transparent conductive oxide layer. (1) The method of claim 5, wherein the transparent conductive oxide layer is a material of tin, zinc oxide, oxidized or doped tin dioxide. Indium Indium 1 9 . According to the application of the general section i 7 item 7 solar cell wire 20 201230376 These light absorbing layers are - limited integration method, in which the crystal layer is stacked. N_i-p or pin non-circle I1, thin film solar cell light brown type silver, and medium U particle system is metal nano particle material of gold two S, which is a kind of n-green material: oxygen Cut, nitrogen or dioxide twenty one