TW201234664A - Semiconductor light emitting device and method for manufacturing same - Google Patents

Semiconductor light emitting device and method for manufacturing same Download PDF

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Publication number
TW201234664A
TW201234664A TW100131311A TW100131311A TW201234664A TW 201234664 A TW201234664 A TW 201234664A TW 100131311 A TW100131311 A TW 100131311A TW 100131311 A TW100131311 A TW 100131311A TW 201234664 A TW201234664 A TW 201234664A
Authority
TW
Taiwan
Prior art keywords
protective film
layer
contact electrode
opening
light emitting
Prior art date
Application number
TW100131311A
Other languages
English (en)
Chinese (zh)
Inventor
Yuko Kato
Hidefumi Yasuda
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201234664A publication Critical patent/TW201234664A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW100131311A 2011-02-10 2011-08-31 Semiconductor light emitting device and method for manufacturing same TW201234664A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011026990A JP2012169332A (ja) 2011-02-10 2011-02-10 半導体発光装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW201234664A true TW201234664A (en) 2012-08-16

Family

ID=44674842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131311A TW201234664A (en) 2011-02-10 2011-08-31 Semiconductor light emitting device and method for manufacturing same

Country Status (3)

Country Link
JP (1) JP2012169332A (fr)
TW (1) TW201234664A (fr)
WO (1) WO2012107973A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029893B2 (en) 2013-02-18 2015-05-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
TWI636597B (zh) * 2015-09-01 2018-09-21 德商歐司朗光電半導體公司 半導體晶片
TWI667812B (zh) * 2014-05-19 2019-08-01 晶元光電股份有限公司 光電元件及其製造方法
TWI714319B (zh) * 2019-10-28 2020-12-21 錼創顯示科技股份有限公司 微型發光二極體裝置
TWI824147B (zh) * 2017-12-14 2023-12-01 美商亮銳公司 用於防止污染led晶粒之方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP6256026B2 (ja) * 2014-01-17 2018-01-10 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6318991B2 (ja) * 2014-08-30 2018-05-09 日亜化学工業株式会社 発光装置の製造方法
KR102323686B1 (ko) * 2014-10-21 2021-11-11 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
JP6634447B2 (ja) * 2014-10-27 2020-01-22 ルミレッズ ホールディング ベーフェー 指向性発光装置及びその製造方法
WO2016157518A1 (fr) * 2015-04-03 2016-10-06 創光科学株式会社 Dispositif émettant de la lumière ultraviolette à semi-conducteur au nitrure et appareil émettant de la lumière ultraviolette à semi-conducteur au nitrure
WO2022050510A1 (fr) * 2020-09-04 2022-03-10 주식회사 포톤웨이브 Dispositif d'émission de lumière ultraviolette et boîtier de dispositif d'émission de lumière le comprenant

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP3449535B2 (ja) * 1999-04-22 2003-09-22 ソニー株式会社 半導体素子の製造方法
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
JP2004103975A (ja) 2002-09-12 2004-04-02 Citizen Watch Co Ltd 光半導体素子の製造方法と光半導体素子およびその光半導体素子を実装した光半導体装置
KR100671924B1 (ko) * 2003-02-19 2007-01-24 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
DE10350707B4 (de) * 2003-02-26 2014-02-13 Osram Opto Semiconductors Gmbh Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung
WO2006043422A1 (fr) * 2004-10-19 2006-04-27 Nichia Corporation Element semi-conducteur
JP5347219B2 (ja) * 2006-10-25 2013-11-20 日亜化学工業株式会社 半導体発光素子
JP5325506B2 (ja) * 2008-09-03 2013-10-23 株式会社東芝 半導体発光素子及びその製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP2010166012A (ja) * 2008-12-17 2010-07-29 Sumitomo Electric Ind Ltd オーミック電極、半導体装置、オーミック電極の製造方法および半導体装置の製造方法
US20110018013A1 (en) * 2009-07-21 2011-01-27 Koninklijke Philips Electronics N.V. Thin-film flip-chip series connected leds

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029893B2 (en) 2013-02-18 2015-05-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
TWI514631B (zh) * 2013-02-18 2015-12-21 Toshiba Kk Semiconductor light emitting device and manufacturing method thereof
TWI667812B (zh) * 2014-05-19 2019-08-01 晶元光電股份有限公司 光電元件及其製造方法
TWI636597B (zh) * 2015-09-01 2018-09-21 德商歐司朗光電半導體公司 半導體晶片
TWI824147B (zh) * 2017-12-14 2023-12-01 美商亮銳公司 用於防止污染led晶粒之方法
TWI714319B (zh) * 2019-10-28 2020-12-21 錼創顯示科技股份有限公司 微型發光二極體裝置
US11393959B2 (en) 2019-10-28 2022-07-19 PlayNitride Display Co., Ltd. Micro light-emitting diode device

Also Published As

Publication number Publication date
WO2012107973A1 (fr) 2012-08-16
JP2012169332A (ja) 2012-09-06

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