TW201308489A - 基板處理的方法及用於其之裝置 - Google Patents

基板處理的方法及用於其之裝置 Download PDF

Info

Publication number: TW201308489A
Authority: TW; Taiwan
Prior art keywords: substrate; syringe; gases; precursor; channels
Prior art date: 2011-06-20

Application number

TW101122091A

Other languages

English (en)

Chinese (zh)

Inventor

Christian Schmid

Dirk Habermann

Chuck Attema

Tom Stewart

Kenneth Provancha

Original Assignee

Schmid Gmbh Gebr

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-06-20

Filing date

2012-06-20

Publication date

2013-02-16

2012-06-20 Application filed by Schmid Gmbh Gebr filed Critical Schmid Gmbh Gebr

2013-02-16 Publication of TW201308489A publication Critical patent/TW201308489A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 100
238000000034 method Methods 0.000 title claims abstract description 35
239000007789 gas Substances 0.000 claims abstract description 54
239000002243 precursor Substances 0.000 claims abstract description 41
239000007800 oxidant agent Substances 0.000 claims abstract description 33
230000001590 oxidative effect Effects 0.000 claims abstract description 32
238000002161 passivation Methods 0.000 claims abstract description 17
239000012298 atmosphere Substances 0.000 claims abstract description 6
238000004519 manufacturing process Methods 0.000 claims abstract description 5
238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims abstract description 4
229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
239000011248 coating agent Substances 0.000 claims description 5
238000000576 coating method Methods 0.000 claims description 5
239000000203 mixture Substances 0.000 claims description 3
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
229910052751 metal Inorganic materials 0.000 claims description 2
239000002184 metal Substances 0.000 claims description 2
230000003068 static effect Effects 0.000 claims description 2
229910052782 aluminium Inorganic materials 0.000 abstract description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
229910052710 silicon Inorganic materials 0.000 abstract description 2
239000010703 silicon Substances 0.000 abstract description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
229910052593 corundum Inorganic materials 0.000 abstract 1
235000012431 wafers Nutrition 0.000 abstract 1
229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
229910052757 nitrogen Inorganic materials 0.000 description 11
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
238000000151 deposition Methods 0.000 description 5
230000008021 deposition Effects 0.000 description 5
239000001301 oxygen Substances 0.000 description 5
229910052760 oxygen Inorganic materials 0.000 description 5
238000000926 separation method Methods 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
239000012080 ambient air Substances 0.000 description 4
238000006243 chemical reaction Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000000843 powder Substances 0.000 description 2
230000002028 premature Effects 0.000 description 2
229910052707 ruthenium Inorganic materials 0.000 description 2
230000002411 adverse Effects 0.000 description 1
239000003570 air Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
239000012530 fluid Substances 0.000 description 1
238000005755 formation reaction Methods 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
238000010944 pre-mature reactiony Methods 0.000 description 1
VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)

TW101122091A 2011-06-20 2012-06-20 基板處理的方法及用於其之裝置 TW201308489A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE201110077833 DE102011077833A1 (de)	2011-06-20	2011-06-20	Verfahren zur Bearbeitung von Substraten und Vorrichtung dazu

Publications (1)

Publication Number	Publication Date
TW201308489A true TW201308489A (zh)	2013-02-16

Family

ID=46298387

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW101122091A TW201308489A (zh)	2011-06-20	2012-06-20	基板處理的方法及用於其之裝置

Country Status (3)

Country	Link
DE (1)	DE102011077833A1 (de)
TW (1)	TW201308489A (de)
WO (1)	WO2012175331A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN107623052A (zh) *	2017-09-01	2018-01-23	常州比太科技有限公司	一种太阳能电池片钝化用Al2O3镀膜系统和方法

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102011080202A1 (de)	2011-08-01	2013-02-07	Gebr. Schmid Gmbh	Vorrichtung und Verfahren zur Herstellung von dünnen Schichten
CN118480868B (zh) *	2024-07-12	2024-12-03	上海钧乾智造科技有限公司	一种用于电池片切面钝化镀膜的喷淋结构、装置及工作方法

Family Cites Families (12)

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Publication number	Priority date	Publication date	Assignee	Title
US5122391A (en)	1991-03-13	1992-06-16	Watkins-Johnson Company	Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
US5304398A (en) *	1993-06-03	1994-04-19	Watkins Johnson Company	Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
JPH07142394A (ja) *	1993-11-12	1995-06-02	Sony Corp	Ｃｖｄ方法及びｃｖｄ装置
US6022414A (en) *	1994-07-18	2000-02-08	Semiconductor Equipment Group, Llc	Single body injector and method for delivering gases to a surface
US5944900A (en) *	1997-02-13	1999-08-31	Watkins Johnson Company	Protective gas shield for chemical vapor deposition apparatus
US6926920B2 (en) *	2002-06-11	2005-08-09	Taiwan Semiconductor Manufacturing Co., Ltd	Chemical vapor deposition (CVD) calibration method providing enhanced uniformity
CN1937175B (zh) *	2005-09-20	2012-10-03	中芯国际集成电路制造(上海)有限公司	用于半导体器件的使用大气压的材料原子层沉积的方法
US7456429B2 (en) *	2006-03-29	2008-11-25	Eastman Kodak Company	Apparatus for atomic layer deposition
US7413982B2 (en) *	2006-03-29	2008-08-19	Eastman Kodak Company	Process for atomic layer deposition
GB0716653D0 (en) *	2007-08-25	2007-10-03	Eastman Kodak Co	Method of reducing dye fade
US20090081356A1 (en) *	2007-09-26	2009-03-26	Fedorovskaya Elena A	Process for forming thin film encapsulation layers
NL2003836C2 (en) *	2009-11-19	2011-05-23	Levitech B V	Floating wafer track with lateral stabilization mechanism.

2011
- 2011-06-20 DE DE201110077833 patent/DE102011077833A1/de not_active Ceased
2012
- 2012-06-05 WO PCT/EP2012/060580 patent/WO2012175331A1/de not_active Ceased
- 2012-06-20 TW TW101122091A patent/TW201308489A/zh unknown

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN107623052A (zh) *	2017-09-01	2018-01-23	常州比太科技有限公司	一种太阳能电池片钝化用Al2O3镀膜系统和方法
CN107623052B (zh) *	2017-09-01	2023-12-05	常州比太科技有限公司	一种太阳能电池片钝化用Al2O3镀膜系统和方法

Also Published As

Publication number	Publication date
DE102011077833A1 (de)	2012-12-20
WO2012175331A1 (de)	2012-12-27

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