TW201313077A - 一種電感耦合式的等離子體處理裝置及其基片處理方法 - Google Patents

一種電感耦合式的等離子體處理裝置及其基片處理方法 Download PDF

Info

Publication number: TW201313077A
Authority: TW; Taiwan
Prior art keywords: magnetic field; magnetic; reaction chamber; line adjusting; adjusting member
Prior art date: 2011-09-13

Application number

TW100146054A

Other languages

English (en)

Chinese (zh)

Other versions

TWI581673B (2

Inventor

Zhong-Du Liu

Original Assignee

Advanced Micro Fab Equip Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-09-13

Filing date

2011-12-13

Publication date

2013-03-16

2011-12-13 Application filed by Advanced Micro Fab Equip Inc filed Critical Advanced Micro Fab Equip Inc

2013-03-16 Publication of TW201313077A publication Critical patent/TW201313077A/zh

2017-05-01 Application granted granted Critical

2017-05-01 Publication of TWI581673B publication Critical patent/TWI581673B/zh

Links

239000000758 substrate Substances 0.000 title claims abstract 23
238000003672 processing method Methods 0.000 title claims abstract 4
230000001939 inductive effect Effects 0.000 title claims abstract 3
230000008878 coupling Effects 0.000 title abstract 2
238000010168 coupling process Methods 0.000 title abstract 2
238000005859 coupling reaction Methods 0.000 title abstract 2
238000006243 chemical reaction Methods 0.000 claims abstract 25
239000000463 material Substances 0.000 claims abstract 8
238000009616 inductively coupled plasma Methods 0.000 claims 17
230000006698 induction Effects 0.000 claims 11
238000000034 method Methods 0.000 claims 7
230000035699 permeability Effects 0.000 claims 6
239000004020 conductor Substances 0.000 claims 4
239000007789 gas Substances 0.000 claims 3
239000012495 reaction gas Substances 0.000 claims 3
229910000859 α-Fe Inorganic materials 0.000 claims 3
239000002184 metal Substances 0.000 claims 2
230000005672 electromagnetic field Effects 0.000 claims 1
230000004907 flux Effects 0.000 claims 1
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
230000011514 reflex Effects 0.000 claims 1
230000001172 regenerating effect Effects 0.000 claims 1
230000007423 decrease Effects 0.000 abstract 1
230000020169 heat generation Effects 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Plasma Technology (AREA)
Drying Of Semiconductors (AREA)

TW100146054A 2011-09-13 2011-12-13 一種電感耦合式的等離子體處理裝置及其基片處理方法 TW201313077A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CN201110269393.2A CN103002649B (zh)	2011-09-13	2011-09-13	一种电感耦合式的等离子体处理装置及其基片处理方法

Publications (2)

Publication Number	Publication Date
TW201313077A true TW201313077A (zh)	2013-03-16
TWI581673B TWI581673B (2)	2017-05-01

Family

ID=47828889

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW100146054A TW201313077A (zh)	2011-09-13	2011-12-13	一種電感耦合式的等離子體處理裝置及其基片處理方法

Country Status (3)

Country	Link
US (1)	US20130062311A1 (2)
CN (1)	CN103002649B (2)
TW (1)	TW201313077A (2)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR101314667B1 (ko) *	2012-01-04	2013-10-04	최대규	자속 채널 결합 플라즈마 반응기
US9257265B2 (en) *	2013-03-15	2016-02-09	Applied Materials, Inc.	Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US20180130639A1 (en) *	2015-05-04	2018-05-10	Michael Nicholas Vranich	External plasma system
EA035003B1 (ru) *	2016-03-16	2020-04-16	Общество С Ограниченной Ответственностью "Изовак Технологии"	Вакуумная установка для нанесения тонкопленочных покрытий и способ нанесения на ней оптических покрытий
CN108339200A (zh) *	2018-04-03	2018-07-31	山西金色阳光科技有限公司	一种高效节能环保磁疗装置
CN109496050A (zh) *	2019-01-03	2019-03-19	厦门大学	一种分层等离子体产生装置
CN112768333B (zh) *	2019-11-05	2025-07-15	汉民科技股份有限公司	磁力线遮蔽控制反应腔室磁场的蚀刻机结构
CN111250016B (zh) *	2020-02-06	2022-08-05	徐国栋	一种用于治疗肿瘤及皮肤病的液体式等离子体装置
US20230274911A1 (en) *	2020-07-09	2023-08-31	Lam Research Corporation	Adjustable geometry trim coil
KR20230067578A (ko) *	2020-09-18	2023-05-16	램 리써치 코포레이션	자기장을 사용한 플라즈마 방전 균일도 제어
CN120417206A (zh) *	2025-07-02	2025-08-01	上海谙邦半导体设备有限公司	感应线圈结构调节组件及等离子体处理设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0562940A (ja) *	1991-09-03	1993-03-12	Sony Corp	矩形基板のドライエツチング装置
KR100238627B1 (ko) *	1993-01-12	2000-01-15	히가시 데쓰로	플라즈마 처리장치
US5433812A (en) *	1993-01-19	1995-07-18	International Business Machines Corporation	Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
TW249313B (2) *	1993-03-06	1995-06-11	Tokyo Electron Co
US6054013A (en) *	1996-02-02	2000-04-25	Applied Materials, Inc.	Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP2929275B2 (ja) *	1996-10-16	1999-08-03	株式会社アドテック	透磁コアを有する誘導結合型−平面状プラズマの発生装置
US5824602A (en) *	1996-10-21	1998-10-20	The United States Of America As Represented By The United States Department Of Energy	Helicon wave excitation to produce energetic electrons for manufacturing semiconductors
EP1209721B1 (en) *	1997-10-10	2007-12-05	European Community	Inductive type plasma processing chamber
US6015476A (en) *	1998-02-05	2000-01-18	Applied Materials, Inc.	Plasma reactor magnet with independently controllable parallel axial current-carrying elements
EP1126504A1 (en) *	2000-02-18	2001-08-22	European Community	Method and apparatus for inductively coupled plasma treatment
JP2003323997A (ja) *	2002-04-30	2003-11-14	Lam Research Kk	プラズマ安定化方法およびプラズマ装置
JP4175021B2 (ja) *	2002-05-01	2008-11-05	株式会社島津製作所	高周波誘導結合プラズマ生成装置およびプラズマ処理装置
US7255774B2 (en) *	2002-09-26	2007-08-14	Tokyo Electron Limited	Process apparatus and method for improving plasma production of an inductively coupled plasma
KR100542740B1 (ko) *	2002-11-11	2006-01-11	삼성전자주식회사	가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
EP1450176A1 (en) *	2003-02-21	2004-08-25	Liaisons Electroniques-Mecaniques Lem S.A.	Magnetic field sensor and electrical current sensor therewith
KR100720989B1 (ko) *	2005-07-15	2007-05-28	주식회사 뉴파워 프라즈마	멀티 챔버 플라즈마 프로세스 시스템
WO2007123378A1 (en) *	2006-04-25	2007-11-01	New Power Plasma Co., Ltd.	Plasma reactor having plasma chamber coupled with magnetic flux channel
US20080124254A1 (en) *	2006-05-22	2008-05-29	Dae-Kyu Choi	Inductively Coupled Plasma Reactor
US7884551B2 (en) *	2006-12-01	2011-02-08	Shunko, Inc.	RF plasma source with quasi-closed solenoidal inductor
US7969096B2 (en) *	2006-12-15	2011-06-28	Mks Instruments, Inc.	Inductively-coupled plasma source
CN101998749B (zh) *	2010-11-26	2013-08-21	中微半导体设备(上海)有限公司	电感耦合型等离子体处理装置

2011
- 2011-09-13 CN CN201110269393.2A patent/CN103002649B/zh active Active
- 2011-12-13 TW TW100146054A patent/TW201313077A/zh unknown
2012
- 2012-08-29 US US13/597,785 patent/US20130062311A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20130062311A1 (en)	2013-03-14
CN103002649A (zh)	2013-03-27
CN103002649B (zh)	2016-09-14
TWI581673B (2)	2017-05-01

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