TW201313877A - 以週期分類第ｉｂ、ｉｉｂ、ｉｉｉａ、ｖｉａ族元素為基礎之強螢光半導體核－殼奈米粒子的合成 - Google Patents

以週期分類第ｉｂ、ｉｉｂ、ｉｉｉａ、ｖｉａ族元素為基礎之強螢光半導體核－殼奈米粒子的合成 Download PDF

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Publication number
TW201313877A
TW201313877A TW101120201A TW101120201A TW201313877A TW 201313877 A TW201313877 A TW 201313877A TW 101120201 A TW101120201 A TW 101120201A TW 101120201 A TW101120201 A TW 101120201A TW 201313877 A TW201313877 A TW 201313877A
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Taiwan
Prior art keywords
shell
reaction mixture
iib
core
temperature
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TW101120201A
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English (en)
Chinese (zh)
Inventor
Werner Hoheisel
Su-San Tian
shi-zhe Tian
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Bayer South East Asia Pte Ltd
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Publication date
Priority claimed from SG2011041274A external-priority patent/SG186498A1/en
Priority claimed from SG2011076742A external-priority patent/SG189577A1/en
Application filed by Bayer South East Asia Pte Ltd filed Critical Bayer South East Asia Pte Ltd
Publication of TW201313877A publication Critical patent/TW201313877A/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/62—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621—Chalcogenides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • B01J13/20—After-treatment of capsule walls, e.g. hardening
    • B01J13/22—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/62—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621—Chalcogenides
    • C09K11/623—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW101120201A 2011-06-07 2012-06-06 以週期分類第ｉｂ、ｉｉｂ、ｉｉｉａ、ｖｉａ族元素為基礎之強螢光半導體核－殼奈米粒子的合成 TW201313877A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG2011041274A SG186498A1 (en) 2011-06-07 2011-06-07 Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification
SG2011076742A SG189577A1 (en) 2011-10-19 2011-10-19 Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification

Publications (1)

Publication Number Publication Date
TW201313877A true TW201313877A (zh) 2013-04-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101120201A TW201313877A (zh) 2011-06-07 2012-06-06 以週期分類第ｉｂ、ｉｉｂ、ｉｉｉａ、ｖｉａ族元素為基礎之強螢光半導體核－殼奈米粒子的合成

Country Status (2)

Country Link
TW (1) TW201313877A (fr)
WO (1) WO2012168192A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI668294B (zh) * 2018-02-22 2019-08-11 國立高雄師範大學 無鎘量子點配體材料及其製造方法
CN110337481A (zh) * 2017-02-28 2019-10-15 国立大学法人名古屋大学 半导体纳米粒子及其制造方法、以及发光器件
CN115612484A (zh) * 2017-02-28 2023-01-17 国立大学法人东海国立大学机构 半导体纳米粒子及其制造方法、以及发光器件
TWI899155B (zh) * 2020-02-21 2025-10-01 日商昭榮化學工業股份有限公司 內核/外殼型半導體奈米粒子之製造方法

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KR101513406B1 (ko) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 감지 및 표시를 위한 방법 및 장치
CN103733355B (zh) 2011-06-30 2017-02-08 佛罗里达大学研究基金会有限公司 用于检测红外辐射的带有增益的方法和设备
KR101788786B1 (ko) * 2013-03-15 2017-10-19 나노코 테크놀로지스 리미티드 Iii-v/아연 칼코겐 화합물로 합금된 반도체 양자점
CA2988784A1 (fr) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Nanoparticules a absorption d'ir monodispersees et procedes et dispositifs associes
CN112822944A (zh) * 2018-10-05 2021-05-18 新加坡科技研究局 一种核-壳型复合材料及其制备方法
CN115337949B (zh) * 2022-08-01 2024-04-19 云南大学 一种异质结复合材料及其制备方法和作为光催化剂的应用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055218A1 (de) 2006-11-21 2008-05-29 Bayer Technology Services Gmbh Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion
US9748422B2 (en) * 2008-01-23 2017-08-29 Massachusetts Institute Of Technology Semiconductor nanocrystals
CN101234779A (zh) 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110337481A (zh) * 2017-02-28 2019-10-15 国立大学法人名古屋大学 半导体纳米粒子及其制造方法、以及发光器件
CN110337481B (zh) * 2017-02-28 2022-11-08 国立大学法人名古屋大学 半导体纳米粒子及其制造方法、以及发光器件
CN115612484A (zh) * 2017-02-28 2023-01-17 国立大学法人东海国立大学机构 半导体纳米粒子及其制造方法、以及发光器件
CN115717065A (zh) * 2017-02-28 2023-02-28 国立大学法人东海国立大学机构 半导体纳米粒子及其制造方法、以及发光器件
TWI668294B (zh) * 2018-02-22 2019-08-11 國立高雄師範大學 無鎘量子點配體材料及其製造方法
TWI899155B (zh) * 2020-02-21 2025-10-01 日商昭榮化學工業股份有限公司 內核/外殼型半導體奈米粒子之製造方法

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WO2012168192A2 (fr) 2012-12-13
WO2012168192A3 (fr) 2013-04-04

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