TW201315828A - Planar magnetron sputtering cathode - Google Patents
Planar magnetron sputtering cathode Download PDFInfo
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- TW201315828A TW201315828A TW100137603A TW100137603A TW201315828A TW 201315828 A TW201315828 A TW 201315828A TW 100137603 A TW100137603 A TW 100137603A TW 100137603 A TW100137603 A TW 100137603A TW 201315828 A TW201315828 A TW 201315828A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000004744 fabric Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
本發明涉及一種平面磁控濺射陰極，尤其涉及一種能夠提高靶材利用率的平面磁控濺射陰極。The invention relates to a planar magnetron sputtering cathode, in particular to a planar magnetron sputtering cathode capable of improving the utilization of a target.
物理氣相沉積(Physical Vapor Deposition，簡稱PVD)，係一種利用物理方式在基材上沉積薄膜的技術。磁控濺射技術係物理氣相沉積技術的一種。在磁控濺射鍍膜技術中，高能離子(通常為電場加速的氬氣離子)轟擊靶材表面，靶材表面離子或原子與入射的高能離子交換能量後從靶材表面飛濺出來，並在基材上沉積成膜。Physical Vapor Deposition (PVD) is a technique for physically depositing a thin film on a substrate. Magnetron sputtering technology is one of the physical vapor deposition techniques. In magnetron sputtering coating technology, high-energy ions (usually electric field-accelerated argon ions) bombard the surface of the target, and ions or atoms on the surface of the target exchange energy with the incident high-energy ions and then splash out from the surface of the target. A film is deposited on the material.
目前，在磁控濺射鍍膜技術應用領域，廣泛使用的係平面磁控濺射陰極。如圖1所示的習知的平面磁控濺射陰極200包括靶材201、磁體裝置203、磁靴205。所述磁體裝置203包括三個磁體210，該三個磁體210裝設於靶材201的背面(即與靶材201的濺射面相對的一面)。所述磁靴205設置於磁體裝置203相對於所述靶材201的一面。圖2所示為圖1去除所述靶材201後，從圖1箭頭所示的方向觀測所述磁體裝置203。如圖2所示，所述每一磁體210由複數磁鐵207縱向堆疊而成，且相鄰的二磁體210之間的極性(N極和S極的朝向)排布相反。在濺射過程中，靶材201表面的磁場強度分佈如圖1中虛線所示。靶材201表面的磁場強度的水準分量越高的區域，其濺射速率越高，消耗也就越大，因此濺射一段時間後，靶材201表面就會出現如圖1所示的蝕刻坑211。蝕刻坑211最深處，對應磁場水準分量最強的地方，而靶材201的其他部位蝕刻較淺，甚至沒有蝕刻。當蝕刻坑211深到一定程度，靶材201就需要更換，否則靶材201將被擊穿，對鍍膜設備造成損壞。平面陰極的靶材201的不均勻刻蝕，使得靶材201的利用率較低，通常只有20-30%，鍍膜成本較高。At present, in the field of application of magnetron sputtering coating technology, a planar magnetron sputtering cathode is widely used. A conventional planar magnetron sputtering cathode 200 as shown in FIG. 1 includes a target 201, a magnet device 203, and a magnetic shoe 205. The magnet device 203 includes three magnets 210 mounted on the back surface of the target 201 (ie, the side opposite to the sputtering surface of the target 201). The magnetic shoe 205 is disposed on a side of the magnet device 203 with respect to the target 201. 2 shows the magnet device 203 as seen from the direction of the arrow in FIG. 1 after the target 201 is removed in FIG. As shown in FIG. 2, each of the magnets 210 is vertically stacked by a plurality of magnets 207, and the polarity (the orientation of the N poles and the S poles) between the adjacent two magnets 210 is reversed. During the sputtering process, the magnetic field intensity distribution on the surface of the target 201 is indicated by a broken line in FIG. In the region where the level component of the magnetic field strength of the surface of the target 201 is higher, the sputtering rate is higher, and the consumption is larger. Therefore, after the sputtering for a while, the etching pit shown in FIG. 1 appears on the surface of the target 201. 211. The deepest part of the etch pit 211 corresponds to the strongest magnetic field level component, while the other parts of the target 201 are etched lightly or even etched. When the etching pit 211 is deep to a certain extent, the target 201 needs to be replaced, otherwise the target 201 will be broken down, causing damage to the coating equipment. The uneven etching of the target 201 of the planar cathode makes the utilization rate of the target 201 low, usually only 20-30%, and the coating cost is high.
有鑒於此，提供一種能夠有效提高靶材利用率的平面磁控濺射陰極。In view of this, a planar magnetron sputtering cathode capable of effectively improving the utilization of a target is provided.
一種平面磁控濺射陰極，其包括靶材、磁體裝置、磁靴，所述磁體裝置裝設於靶材的相對於濺射表面的一面，所述磁靴設置於磁體裝置遠離所述靶材的一面，所述磁體裝置包括平行且等間隔設置的三第一磁體，該三第一磁體分別設置於靶材的兩側和中間，且相鄰的二第一磁體的極性排布相反，該磁體裝置還包括四第二磁體，該四第二磁體為兩兩一組設置於相鄰的二第一磁體之間，且每一第二磁體均與所述第一磁體平行；且該磁體裝置中相鄰的第一磁體與第二磁體的極性排布相反，相鄰的二第二磁體的極性排布相反。A planar magnetron sputtering cathode comprising a target, a magnet device, a magnetic shoe, the magnet device being mounted on a side of the target opposite to the sputtering surface, the magnetic shoe being disposed on the magnet device away from the target One side of the magnet device includes three first magnets arranged in parallel and at equal intervals, the three first magnets are respectively disposed on two sides and the middle of the target, and the polarities of the adjacent two first magnets are oppositely arranged. The magnet device further includes four second magnets disposed in pairs between the adjacent two first magnets, and each of the second magnets is parallel to the first magnet; and the magnet device The adjacent first magnets are opposite in polarity to the second magnets, and the adjacent two second magnets have opposite polarities.
本發明平面磁控濺射陰極在原有裝設的三第一磁體的基礎上，還增加了四第二磁體，如此使得靶材表面的磁場強度分佈更加均勻，使得靶材表面的蝕刻區大大寬化，從而有效提高了靶材的利用率。The planar magnetron sputtering cathode of the invention further adds four second magnets on the basis of the original three first magnets, so that the magnetic field intensity distribution on the surface of the target is more uniform, so that the etching area on the surface of the target is wide. The efficiency of the target is effectively improved.
請參閱圖3，本發明平面磁控濺射陰極100包括靶材10、磁體裝置50、磁靴30。所述靶材10為平面靶，其包括一濺射表面11。所述磁體裝置50垂直裝設於靶材10的相對於濺射表面11的一面，所述磁靴30設置於磁體裝置50遠離所述靶材10的一面。磁靴30用以遮罩所述磁體裝置50鄰近磁靴30一側的磁場。Referring to FIG. 3, the planar magnetron sputtering cathode 100 of the present invention includes a target 10, a magnet device 50, and a magnetic shoe 30. The target 10 is a planar target that includes a sputtering surface 11. The magnet device 50 is vertically disposed on a side of the target 10 opposite to the sputtering surface 11 , and the magnetic shoe 30 is disposed on a side of the magnet device 50 away from the target 10 . The magnetic shoe 30 is used to cover the magnetic field of the magnet device 50 adjacent to the side of the magnetic shoe 30.
所述磁體裝置50包括平行設置的三第一磁體510和四第二磁體530，且每一第一磁體510的N極和S極的連線和每一第二磁體530的N極和S極的連線均垂直所述靶材10。所述三第一磁體510分別等間隔設置於靶材10的兩側和中間，且每相鄰的二第一磁體510 的極性排布相反。The magnet device 50 includes three first magnets 510 and four second magnets 530 disposed in parallel, and a line connecting the N and S poles of each of the first magnets 510 and N and S poles of each of the second magnets 530 The wires are perpendicular to the target 10. The three first magnets 510 are respectively disposed at equal intervals on both sides and in the middle of the target 10, and the polarity of each adjacent two first magnets 510 is oppositely arranged.
所述四第二磁體530為兩兩一組設置，每組第二磁體530設置於相鄰的二第一磁體510之間，且每一第一磁體510與相鄰的第二磁體530的極性排布相反，每相鄰的二第二磁體530的極性排布相反。The four second magnets 530 are disposed in groups of two, each set of second magnets 530 is disposed between two adjacent first magnets 510, and the polarity of each of the first magnets 510 and the adjacent second magnets 530 In the opposite arrangement, the polarity of each adjacent two second magnets 530 is reversed.
圖4所示為圖3去除所述靶材10後，從圖3箭頭所示的方向觀測所述磁體裝置50。如圖4所示，每一第一磁體510由複數條形的第一磁鐵511縱向堆疊而成，且同一第一磁體510中的複數第一磁鐵511的極性排布相同。每一第二磁體530由複數條形的第二磁鐵531縱向堆疊而成，且同一第二磁體530中的複數第二磁鐵531的極性排布相同。4 shows the magnet device 50 viewed from the direction indicated by the arrow in FIG. 3 after the target 10 is removed in FIG. As shown in FIG. 4, each of the first magnets 510 is vertically stacked by a plurality of strip-shaped first magnets 511, and the plurality of first magnets 511 in the same first magnet 510 are arranged in the same polarity. Each of the second magnets 530 is vertically stacked by a plurality of second magnets 531, and the plurality of second magnets 531 of the same second magnet 530 are arranged in the same polarity.
所述每一第一磁鐵511與每一第二磁鐵531的磁性大小接近，但為節省平面磁控濺射陰極100的裝配空間，每一第二磁鐵531的體積小於每一第一磁鐵511的體積。The magnetic size of each of the first magnets 511 and each of the second magnets 531 is close to each other, but to save the assembly space of the planar magnetron sputtering cathode 100, the volume of each of the second magnets 531 is smaller than that of each of the first magnets 511. volume.
如圖5所示的靶材10表面的磁力線分佈示意圖，二磁力線指向方向相反，二者發生抵消使得磁場強度降低，二磁力線指向方向相同，相互疊加使得磁場強度增強。如此第二磁體530的設置使得靶材10表面磁場強度的分佈變得均勻(如圖6所示)，整個靶材10的刻蝕區大大寬化，從而將靶材10的利用率提高至70-80%。As shown in FIG. 5, the magnetic field lines on the surface of the target 10 are arranged in the opposite direction. The two magnetic lines of force are opposite in direction, and the two are offset to reduce the magnetic field strength. The two magnetic lines of force are oriented in the same direction, and the mutual superposition causes the magnetic field strength to be enhanced. Thus, the arrangement of the second magnet 530 makes the distribution of the magnetic field strength of the surface of the target 10 uniform (as shown in FIG. 6), and the etching area of the entire target 10 is greatly widened, thereby increasing the utilization rate of the target 10 to 70. -80%.
本發明平面磁控濺射陰極100藉由於第一磁體510之間設置第二磁體530，使所述靶材10表面的磁場強度分佈更加均勻，使得靶材10表面的蝕刻區大大寬化，從而有效提高了靶材10的利用率。The planar magnetron sputtering cathode 100 of the present invention makes the magnetic field intensity distribution on the surface of the target 10 more uniform by providing the second magnet 530 between the first magnets 510, so that the etching area on the surface of the target 10 is greatly widened, thereby The utilization rate of the target 10 is effectively improved.
200．．．平面磁控濺射陰極200. . . Planar magnetron sputtering cathode
201．．．靶材201. . . Target
203．．．磁體裝置203. . . Magnet device
205．．．磁靴205. . . Magnetic shoe
210．．．磁體210. . . magnet
207．．．磁鐵207. . . magnet
211．．．蝕刻坑211. . . Etch pit
100．．．平面磁控濺射陰極100. . . Planar magnetron sputtering cathode
10．．．靶材10. . . Target
11．．．濺射表面11. . . Sputtering surface
50．．．磁體裝置50. . . Magnet device
510．．．第一磁體510. . . First magnet
511．．．第一磁鐵511. . . First magnet
530．．．第二磁體530. . . Second magnet
531．．．第二磁鐵531. . . Second magnet
30．．．磁靴30. . . Magnetic shoe
圖1為習知的平面磁控濺射陰極的俯視示意圖；1 is a top plan view of a conventional planar magnetron sputtering cathode;
圖2為習知的平面磁控濺射陰極的磁體裝置的正面示意圖；2 is a front elevational view of a magnet device of a conventional planar magnetron sputtering cathode;
圖3為本發明較佳實施例的平面磁控濺射陰極的俯視示意圖；3 is a top plan view of a planar magnetron sputtering cathode according to a preferred embodiment of the present invention;
圖4為本發明較佳實施例的平面磁控濺射陰極的磁體裝置的正面示意圖；4 is a front elevational view showing a magnet device of a planar magnetron sputtering cathode according to a preferred embodiment of the present invention;
圖5為本發明較佳實施例的靶材表面的磁力線分佈示意圖；Figure 5 is a schematic view showing the distribution of magnetic lines of force on the surface of a target according to a preferred embodiment of the present invention;
圖6為本發明較佳實施例的靶材表面的磁場強度分佈示意圖。Figure 6 is a schematic view showing the distribution of magnetic field strength on the surface of a target according to a preferred embodiment of the present invention.
100．．．平面磁控濺射陰極100. . . Planar magnetron sputtering cathode
10．．．靶材10. . . Target
11．．．濺射表面11. . . Sputtering surface
50．．．磁體裝置50. . . Magnet device
510．．．第一磁體510. . . First magnet
530．．．第二磁體530. . . Second magnet
30．．．磁靴30. . . Magnetic shoe
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103097109A CN103046009A (en) | 2011-10-13 | 2011-10-13 | Plane magnetron sputtering cathode |
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| TW201315828A true TW201315828A (en) | 2013-04-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104404460B (en) * | 2014-11-12 | 2017-03-15 | 永州市新辉开科技有限公司 | A kind of cathode block optimization method of ITO target |
| CN106435501A (en) * | 2016-10-15 | 2017-02-22 | 凯盛光伏材料有限公司 | Double closed loop magnetron sputtering cathode |
| CN108728808A (en) * | 2017-05-09 | 2018-11-02 | 杭州朗为科技有限公司 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
| CN110770364A (en) * | 2017-12-26 | 2020-02-07 | 深圳市柔宇科技有限公司 | Magnetron sputtering cathode system |
| CN110714186A (en) * | 2018-07-11 | 2020-01-21 | 君泰创新（北京）科技有限公司 | Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device |
| CN109881167A (en) * | 2019-04-17 | 2019-06-14 | 合肥科赛德真空技术有限公司 | A kind of high efficiency magnetron sputtering planar cathode |
| CN111172504B (en) * | 2019-12-27 | 2021-11-02 | 季华实验室 | A magnetron sputtering cathode |
| CN115755250B (en) * | 2022-11-02 | 2026-01-02 | 安徽工程大学 | A method for fabricating an ultra-long focal length thin-film concave mirror array |
| CN115505890B (en) * | 2022-11-28 | 2023-05-05 | 中科纳微真空科技(合肥)有限公司 | Magnetron sputtering planar cathode and magnetic circuit thereof |
| CN116190180B (en) * | 2023-01-16 | 2024-01-30 | 深圳市矩阵多元科技有限公司 | Magnetron device for PVD planar target and magnetron sputtering equipment |
| CN119811961A (en) * | 2025-03-14 | 2025-04-11 | 深圳市矩阵多元科技有限公司 | Magnetrons with more than three poles and PVD magnetron sputtering equipment |
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| JPS6223979A (en) * | 1985-07-24 | 1987-01-31 | Toshiba Corp | Target for magnetron sputtering |
| US5865970A (en) * | 1996-02-23 | 1999-02-02 | Permag Corporation | Permanent magnet strucure for use in a sputtering magnetron |
| KR100846484B1 (en) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | RMIM electrode, manufacturing method thereof and sputtering apparatus employing the same |
| US20120097534A1 (en) * | 2008-08-29 | 2012-04-26 | Ulvac, Inc. | Magnetron sputtering cathode and film formation apparatus |
| CN101418433A (en) * | 2008-10-17 | 2009-04-29 | 湖南玉丰真空科学技术有限公司 | Planar magnetron sputtering cathode capable of improving target material utilization rate |
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