TW201330050A - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

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Publication number
TW201330050A
TW201330050A TW101132339A TW101132339A TW201330050A TW 201330050 A TW201330050 A TW 201330050A TW 101132339 A TW101132339 A TW 101132339A TW 101132339 A TW101132339 A TW 101132339A TW 201330050 A TW201330050 A TW 201330050A
Authority
TW
Taiwan
Prior art keywords
discharge
inflow
processing apparatus
support
substrate processing
Prior art date
Application number
TW101132339A
Other languages
English (en)
Chinese (zh)
Inventor
許官善
絏竣淏
Original Assignee
特艾希米控公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 特艾希米控公司 filed Critical 特艾希米控公司
Publication of TW201330050A publication Critical patent/TW201330050A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/17Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] specially adapted for supporting large square shaped substrates

Landscapes

  • Chemical Vapour Deposition (AREA)
TW101132339A 2011-09-08 2012-09-05 基板處理裝置 TW201330050A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110091425A KR101275496B1 (ko) 2011-09-08 2011-09-08 기판 처리 장치

Publications (1)

Publication Number Publication Date
TW201330050A true TW201330050A (zh) 2013-07-16

Family

ID=47832697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101132339A TW201330050A (zh) 2011-09-08 2012-09-05 基板處理裝置

Country Status (4)

Country Link
KR (1) KR101275496B1 (fr)
CN (1) CN103782367B (fr)
TW (1) TW201330050A (fr)
WO (1) WO2013036018A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101512330B1 (ko) * 2013-06-11 2015-04-15 주식회사 테라세미콘 기판처리장치
KR102401742B1 (ko) * 2015-09-17 2022-05-25 주성엔지니어링(주) 활성가스라인의 온도조절이 가능한 챔버세정장치
KR102423268B1 (ko) * 2018-02-20 2022-07-21 주식회사 원익아이피에스 기판처리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244095A (ja) * 1993-02-12 1994-09-02 Dainippon Screen Mfg Co Ltd 基板冷却装置
JP3912208B2 (ja) * 2002-02-28 2007-05-09 東京エレクトロン株式会社 熱処理装置
KR100716456B1 (ko) * 2004-12-29 2007-05-10 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4878830B2 (ja) * 2005-12-12 2012-02-15 株式会社日立国際電気 基板処理装置
JP5015847B2 (ja) * 2008-04-07 2012-08-29 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラムならびに記録媒体
KR101094279B1 (ko) * 2009-11-06 2011-12-19 삼성모바일디스플레이주식회사 가열 수단 및 이를 포함하는 기판 가공 장치

Also Published As

Publication number Publication date
KR101275496B1 (ko) 2013-06-17
WO2013036018A3 (fr) 2013-05-02
KR20130027902A (ko) 2013-03-18
CN103782367A (zh) 2014-05-07
CN103782367B (zh) 2017-02-08
WO2013036018A2 (fr) 2013-03-14

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