TW201344779A - 磊晶鍺錫合金表面處理的方法 - Google Patents

磊晶鍺錫合金表面處理的方法 Download PDF

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TW201344779A
TW201344779A TW102113639A TW102113639A TW201344779A TW 201344779 A TW201344779 A TW 201344779A TW 102113639 A TW102113639 A TW 102113639A TW 102113639 A TW102113639 A TW 102113639A TW 201344779 A TW201344779 A TW 201344779A
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山契斯艾羅安東尼歐Ｃ
黃奕洲
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應用材料股份有限公司
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Abstract

本發明提供多種準備鍺錫或矽鍺錫層清潔表面以便後續沉積之方法。藉由在處理腔室內安置具有暴露的鍺錫或矽鍺錫層之基板、加熱處理腔室及向處理腔室流入鹵化物氣體以使用熱蝕刻或電漿輔助蝕刻來蝕刻基板表面，在此之後於實質上無氧化物及污染物的表面上沉積上覆層，以此Ge、摻雜Ge、另一GeSn或SiGeSn層、摻雜GeSn或SiGeSn層、絕緣體或金屬之上覆層可沉積於已準備之GeSn或SiGeSn層上。方法亦可包括放置及蝕刻犧牲層、使用快速熱退火進行熱清潔或利用三氟化氮及氨氣之電漿製程。

Description

磊晶鍺錫合金表面處理的方法
本文描述之技術係關於鍺錫(germanium tin；GeSn)或矽鍺錫(silicon germanium tin；SiGeSn)層之表面準備，以便用於後續沉積。
鍺係用於諸如CMOS電晶體之半導體應用的首要材料中之一者。然而，由於同鍺相比矽明顯更豐富，矽已經成為CMOS製造中壓倒性的半導體材料之選擇。根據莫耳定律，隨著元件幾何形狀縮小，電晶體組件之尺寸給工程師製造元件的工作帶來了挑戰，該等元件更小、更快、使用功率更少及產生熱量更少。舉例而言，隨著電晶體之尺寸縮小，電晶體之通道區域變小，且通道之電子性質的可行性變小，具有更大的電阻係數及更高的閾值電壓。
藉由使用嵌入源極/汲極區域中之矽-鍺應激子，提高矽之本質移動率，矽通道區域內之載子移動率增大。然而，對於未來節點，仍需更高移動率的元件。
已有建議轉換至比矽之移動率更高的材料，諸如鍺用於pMOSFET。然而，鍺之移動率並不優於應變矽，除非鍺 亦為應變的。近期已發現，長在源極汲極區域上之鍺錫(GeSn)需要進行應變，以製造優異的鍺pMOSFET通道，此舉利用了鍺/GeSn的晶格失配。GeSn及矽鍺錫(SiGeSn)亦具有仍高於Ge的移動率，因此GeSn及矽鍺錫潛在地可自身用於通道應用。
然而，在GeSn層的形成及後續處理期間，該表面可變氧化或受其他雜質影響，從而影響任何上覆層之後續沉積。上覆層材料可包括Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。不同於矽表面，鍺表面並未因氧化物形成而有效地鈍化。在大氣條件下，非穩定氧化鍺之形成在表面導致點缺陷，該點缺陷可導致後續沉積層之缺陷。因此，需要準備GeSn或SiGeSn表面以用於後續上覆層沉積之方法。
本發明提供多種準備鍺錫(GeSn)或矽鍺錫(SiGeSn)層表面以用於後續沉積之方法。在一或多個實施例中，藉由以下步驟可將Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬之層沉積於已準備的GeSn或SiGeSn層上：在處理腔室內安置具有暴露的GeSn或SiGeSn層之基板；將處理腔室加熱至第一溫度；在第一溫度向處理腔室流入蝕刻氣體，諸如鹵化物氣體；使用熱蝕刻或電漿輔助蝕刻在第一溫度蝕刻該基板表面；於已清潔表面之上沉積上覆層，其中該上覆層可包括Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。
在一或多個實施例中，一種準備鍺錫(GeSn)或矽鍺錫(SiGeSn)層表面之方法可包括：於GeSn或SiGeSn層表面上沉積犧牲性保護帽鍺層，該層厚度可自20埃至40埃，，其中鍺層係在GeSn或SiGeSn層形成之後及在晶圓傳送出處理腔室之前沉積；將晶圓傳送至第二處理腔室，在第二處理腔室內將執行進一步沉積；將第二處理腔室加熱至第一溫度；在第一溫度向第二處理腔室流入鹵化物氣體；在於已清潔表面之上沉積另一層前，使用熱蝕刻或電漿輔助蝕刻在第一溫度蝕刻基板表面，以移除犧牲性鍺層及暴露清潔的GeSn或SiGeSn表面，其中該上覆層可包括Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。
在另一實施例中，一種準備鍺錫(GeSn)或矽鍺錫(SiGeSn)層表面之方法可包括：在處理腔室內安置具有暴露的GeSn或SiGeSn層之基板；向腔室內流入H2，同時保持恆定壓力；將腔室加熱至第一溫度，同時保持H2之流動，其中該溫度可高於450℃及可保持短時間；停止H2流入腔室；在於已清潔的GeSn或SiGeSn表面之上沉積另一層前，將腔室冷卻至第二溫度，該第二溫度可低於400℃，其中該上覆層可包括Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。
在又一實施例中，一種準備清潔的GeSn或SiGeSn表面之方法可包括：在處理腔室內安置基板，其中該基板包括暴露的GeSn或SiGeSn層；將處理腔室調整至第一溫度； 在第一溫度向處理腔室流入NF3與NH3電漿氣體混合物，以形成鹽混合物，其中鹽混合物包括表面污染物；將基板加熱至第二溫度，以昇華鹽混合物；在沉積腔室內安置已清潔的基板，其中保持真空狀態；以及於已清潔表面之上沉積上覆層，其中該上覆層包含Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬之中一者。
鹵化物氣體可包括氯或氯化氫。摻雜劑可包括一或多個由硼(B)、磷(P)或砷(As)中之一者組成的成分。
100‧‧‧方法
102~110‧‧‧步驟
200‧‧‧方法
202~216‧‧‧步驟
300‧‧‧方法
302~312‧‧‧步驟
400‧‧‧方法
402~412‧‧‧步驟
因此，為使可詳細地理解本發明之上述特徵，可參考實施例閱讀本發明更特定之描述(上文已簡要概述)，其中一些實施例將在隨附圖式中圖示。然而，應注意，隨附圖式僅圖示出本發明之典型實施例，且因此該等圖式不欲視為本發明範疇之限制，因為本發明可允許其他同等有效之實施例。
第1圖係流程圖，概述根據一個實施例之一種方法。
第2圖係流程圖，概述根據另一實施例之一種方法。
第3圖係流程圖，概述根據又一實施例之一種方法。
第4圖係流程圖，概述根據又一實施例之一種方法。
為了促進理解，在可能的情況下，相同元件符號已用於指代諸圖共用之相同元件。應涵蓋，在一個實施例中揭示之元件可有利地用於其他實施例而無需贅述。
本發明提供多種準備鍺錫(GeSn)或矽鍺錫(SiGeSn) 層表面以用於後續沉積之方法。該等方法現將參閱下文圖式進行更詳細地描述。
第1圖係流程圖，概述根據一個實施例之方法100。在步驟102處，半導體基板安置於處理腔室內。半導體基板可能係其上將形成應激子層或具有其他功能之上覆層之任何半導電材料。在一個實例中可使用矽或鍺基板，該矽或鍺基板上形成GeSn或SiGeSn層。半導體基板可具有形成於GeSn或SiGeSn層上之氧化物或表面污染物區域，該等區域可能係在真空環境與周圍環境之間的傳送步驟時產生。舉例而言，在源極/汲極區域的形成與進一步沉積之前遮罩的移除之間的傳送步驟期間，氧化物可能形成且表面污染物可能累積。
在步驟104處，處理腔室加熱至第一溫度。第一溫度可自300℃至400℃，選定該第一溫度以準備GeSn或SiGeSn層用於後續步驟。溫度選擇取決於許多因素，包括層之厚度及層將在選定溫度下所處的時間量。
預計關於GeSn或SiGeSn層及上升溫度之主要問題為將Sn從GeSn或SiGeSn晶格中分離。鍺晶體一般具有立方結構，單位晶胞尺寸大約為566 pm。各個鍺原子之半徑大約為125 pm，錫原子之半徑大約為145 pm。將更大的金屬原子添加至鍺晶體矩陣導致了更大的晶格尺寸，該晶格尺寸施加單軸壓縮應力給側邊鍺原子及/或施加雙軸拉伸應變給上覆鍺原子。此應變增加了局部電子之能量並減小了鍺之帶隙，導致與未應變鍺相比更高的載子移動率。
在一個態樣中，矽或鍺基板可具有鍺通道層，接近 於該鍺通道層，應激子層將作為電晶體閘極結構的一部分形成。在此情況下，GeSn或SiGeSn應激子在相鄰鍺層上施加單軸應力。在另一態樣中，鍺通道層沉積於應激子層之上方，以便將雙軸拉伸應變施加於鍺通道層。然而，當溫度過高或保持高溫時間過長時，錫可部分地或完全地從鍺晶體矩陣中分離，減小帶隙上的應力益處。因此，應在所有步驟中考慮在特定溫度下耗費的時間。
在步驟106處，蝕刻氣體在第一溫度流入處理腔室。蝕刻氣體可為鹵化物氣體。鹵化物氣體可為諸如氯或氯化氫之氣體。然而，涵蓋用於蝕刻製程之任何鹵化物氣體。上述溫度之選擇亦可受到鹵化物氣體選擇的影響。使用氯移除表面氧化層或污染物的簡短蝕刻之示範性溫度可低至300℃。在一個實施例中使用氯化氫時，蝕刻溫度可低至自350℃至370℃。蝕刻氣體流入腔室之速率可諸如自約10 sccm至約300 sccm，諸如自約50 sccm至約200 sccm，例如約100 sccm。蝕刻氣體亦可與載體氣體混合，以便在處理腔室內達到所要的空間速度及/或混合效能。
一旦蝕刻氣體存在於腔室內，在步驟108處，表面氧化物或污染物可從GeSn或SiGeSn層的表面清潔。可使用純粹熱蝕刻或電漿輔助蝕刻製程完成蝕刻製程。當使用電漿輔助製程時，蝕刻溫度可低於純粹熱蝕刻製程。可預期，因為電漿可在較低溫度下執行，製程可在Sn分離發生之前經歷較長一段時間完成。
在步驟110處，上覆層沉積於已清潔的GeSn或 SiGeSn層之表面上。上覆層可包含Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。可用作上覆層的絕緣體包括可用於半導體應用中所有已知的絕緣體列表，其中示範性實施例包括氧化鍺或氧化矽。可用於上覆層中的金屬包括可用於半導體應用中所有已知的金屬列表，其中示範性實施例包括鎳及鉑。
在沉積該等已描述層之技術中，上覆層可藉由任何已知的技術進行沉積，該等技術諸如化學氣相沉積(chemical vapor deposition；CVD)或物理氣相沉積(physical vapor deposition；PVD)。在一或多個實施例中，氧化鍺及氧化矽可藉由CVD製程來沉積。在又一實施例中，鎳或鉑可藉由PVD製程來沉積以形成觸點。在一或多個CVD製程中，前驅物可與惰性氣體混合，該惰性氣體可能為不反應氣體，諸如氮氣、氫氣；或稀有氣體，諸如氦或氬；或上述氣體的組合。能夠併入該層之摻雜劑可包括磷、硼或砷。
在一個實施例中，上覆層可為摻雜鍺層，可藉由習用之CVD製程來沉積摻雜鍺層。鍺前驅物可為氫化鍺，諸如鍺烷(germane；GeH4)或高級氫化物(higher hydrides；GexH2x+2)或上述化合物的組合。可與摻雜劑來源氣體一起遞送鍺前驅物。摻雜劑來源氣體可包括二硼烷、膦、胂或上述氣體的組合。進一步，摻雜劑可與惰性氣體混合，該惰性氣體可為不反應氣體，諸如氮氣、氫氣；或稀有氣體，諸如氦或氬；或上述氣體的組合；以便在處理腔室內達到所要的空間速度及/或混合效能。
第2圖係流程圖，概述了根據另一實施例之方法200。在步驟202處，半導體基板安置於第一處理腔室內。如先前論述，半導體基板可能係其上將形成應激子層之任何半導電材料。可在一個實例中使用矽或鍺基板，該矽或鍺基板上形成GeSn或SiGeSn層。
在步驟204處，GeSn或SiGeSn層可形成於基板表面上。GeSn或SiGeSn層可藉由此技術中任何已知的方法形成，諸如MOCVD。就此而言，第一處理腔室應將保持密封，以防GeSn或SiGeSn層之污染。
在步驟206處，犧牲性保護帽鍺層可沉積於基板表面。鍺前驅物通常為氫化鍺，諸如鍺烷(GeH4)、二鍺烷(Ge2H6)或高級氫化物(GexH2x+2)或上述化合物的組合。鍺前驅物可與惰性氣體混合，該惰性氣體可為不反應氣體，諸如氮氣、氫氣；或稀有氣體，諸如氦或氬；或上述氣體的組合。鍺前驅物的體積流動速率與載體氣體流動速率之比率可用於控制氣流穿過腔室的速度。比率可為任何比例，從約1%到約99%不等，視所要的流動速度而定。
應先沉積步驟206中之犧牲性保護帽鍺層，然後處理腔室開封及晶圓從處理腔室傳送出。進一步，犧牲性保護帽鍺層在GeSn或SiGeSn層於相同腔室內沉積之後進行後續沉積。重要的是，GeSn或SiGeSn層應避免暴露至氧或其他可能的污染物，直到鍺層沉積於GeSn或SiGeSn層表面之上方為止。犧牲性保護帽鍺層可充當阻障層，允許具有GeSn或SiGeSn層之基板在腔室之間傳送或允許當前處理腔室之開 啟，而不會污染GeSn或SiGeSn層表面。
此步驟中之犧牲性保護帽鍺可沉積於所有暴露表面上，諸如於暴露的矽、鍺、GeSn或SiGeSn層或光阻上。犧牲性保護帽鍺層用作GeSn或SiGeSn層上的保護塗層，在此之後從處理腔室傳送出。犧牲性保護帽鍺層可相對較薄。在一些實施例中，鍺層厚度可在20埃-100埃之間，諸如20埃-40埃厚，較佳實施例之厚度為20埃。
犧牲性保護帽鍺層可藉由使用上文列出之前驅物的CVD製程來進行沉積。鍺層之成長大體上係高結構品質的磊晶。處理腔室內之壓力可保持在約20托與約200托之間，諸如在約20托與約80托之間，例如約40托。溫度在約150℃與約500℃之間，諸如在約300℃與約450℃之間，例如約300℃。在一些實施例中，壓力可能在約20托以下，但是減小壓力亦減小沉積速率。在該等條件下，沉積速率在約50埃/分鐘與約500埃/分鐘之間。
在步驟208中，基板可傳送至第二處理腔室。在上述步驟中沉積於GeSn或SiGeSn層上之鍺層將在傳送期間受到氧化及污染，但是該鍺層將防止GeSn或SiGeSn層之氧化或其他污染。
在步驟210處，第二處理腔室加熱至第一溫度。第一溫度可自300℃至400℃，選定該第一溫度用於準備GeSn或SiGeSn層以用於後續步驟。溫度選擇取決於類似因素，諸如厚度及時間，如上文更詳細之描述。
在步驟212處，蝕刻氣體在第一溫度流入第二處理 腔室。蝕刻氣體可為鹵化物氣體。鹵化物氣體可為諸如氯或氯化氫之氣體。然而，涵蓋用於蝕刻製程之任何鹵化物氣體。上述溫度之選擇亦可受到鹵化物氣體選擇的影響。使用氯移除表面氧化層或污染物的簡短蝕刻之已知溫度可低至300℃。當在一個實施例中使用氯化氫時，蝕刻溫度可自350℃至370℃。蝕刻氣體流入腔室之速率可諸如自約10 sccm至約300 sccm，諸如自約50 sccm至約200 sccm，例如約100 sccm。蝕刻氣體亦可與載體氣體混合，以便在處理腔室內達到所要的空間速度及/或混合效能。
一旦蝕刻氣體存在於腔室內，在步驟214處，犧牲性保護帽鍺層可從GeSn或SiGeSn層的表面被蝕刻。蝕刻製程可使用純粹熱蝕刻或電漿輔助蝕刻製程完成。當使用電漿輔助製程時，蝕刻溫度可低於純粹熱蝕刻製程。可預期，因為電漿可在較低溫度下執行，該製程可在錫從GeSn或SiGeSn發生分離之前經歷較長一段時間完成。在此實施例中，在上述準備步驟之後，僅犧牲性保護帽鍺層暴露於大氣條件下，防止GeSn或SiGeSn層上氧化物的形成或污染。因此，藉由移除犧牲性保護帽鍺層，新暴露的GeSn或SiGeSn層實質上並無氧化物及污染物，且為後續步驟中的沉積做好準備。
在步驟216處，上覆層沉積於已清潔的GeSn或SiGeSn層之表面上。如先前所述，該上覆層可包含Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。上覆層可藉由在沉積該等層之技術中任何已知的技術(諸如CVD或PVD)進行沉積。參閱第1圖之圖示， 用於上覆層沉積之其他參數及示範性實施例亦適用於此處。為簡短起見，本文以引用方式合併該等其他參數及示範性實施例。
第3圖係流程圖，該圖概述根據另一實施例之方法300。在步驟302處，半導體基板安置於快速熱準備腔室內。如先前論述，半導體基板可能係其上待形成應激子層或任何其他功能層之任何半導電材料。在一個實例中可使用其上待形成GeSn或SiGeSn層之矽或鍺基板。
在步驟304處，H2可流入處理腔室。H2之流動可保持在恆定壓力下。在一或多個實施例中，該壓力可保持自20托至200托。
在步驟306處，腔室可加熱至第一溫度，同時保持H2流動。腔室加熱至高於400℃的溫度。高溫可導致暴露的GeSn或SiGeSn表面之表面氧化層或污染物發生熱脫附。如前所述，必須在加熱製程期間考慮到防止GeSn或SiGeSn層之Sn的分離。GeSn或SiGeSn層之熱穩定性由許多因素控制，包括層之厚度、最終溫度、特定溫度存在之時間及大氣。可預期GeSn或SiGeSn層之一個實施例在500℃保持穩定狀態15分鐘。
恆定的H2流可在有高溫參與的情況下增加表面氧化物及/或污染物之熱脫附。在不意欲受限於理論的情況下，H2之恆定流動可藉由至少兩個機構來增強表面氧化物的移除。在一個態樣中，H2可與表面氧化物反應形成揮發性物質，之後可從腔室內移除該揮發性物質。在另一態樣中，可藉由 淨化大氣中先前脫附之氧化物或污染物質輔助熱脫附，從而減小氧化物或污染物質之分壓。
在此方法之一或多個實施例中，可利用紫外線光源(諸如閃光燈)來輔助熱處理。RTP反應器中典型的習用燈泡產生寬波長的光。此光之長波長表示所產生的能量較低。藉由使用紫外線光源，氧化物可在較低溫度下從GeSn或SiGeSn層表面脫附或比單獨的快速熱退火處理經歷較短的時間框。
一旦GeSn或SiGeSn層實質上不含氧化物及.污染物，則在步驟308處，可停止進入大氣之H2流。預期GeSn或SiGeSn層將在熱脫附之後經歷一些損失。進一步，此處技術之間存在一些重疊，因為小於20埃之薄鍺層可藉由高溫(諸如溫度處於450℃以上)下的熱處理移除。
在停止H2流之後，在步驟310處，溫度可冷卻至400℃以下。用於快速熱退火製程之溫度可高於列出的最高溫度，因為熱退火製程的時間週期短。因此，溫度應在氧化物或污染物質脫附之後儘快降下來，以防止錫從GeSn或SiGeSn晶格內分離。
在步驟312處，上覆層沉積於已清潔的GeSn或SiGeSn層之表面上。如先前所述，上覆層可包含Ge、摻雜Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。上覆層可藉由在沉積該等層之技術中任何已知的技術(諸如CVD或PVD)進行沉積。如參考第1圖所描述，用於上覆層沉積之其他參數及示範性實施例亦適用於此 處。為簡短起見，本文以引用方式合併該等其他參數及示範性實施例。
第4圖係流程圖，該圖概述了根據另一實施例之方法400。在步驟402處，半導體基板安置於處理腔室內。處理腔室可為整合的乾式清潔腔室，諸如SiCoNi腔室，該腔室可購自Applied Materials,Inc.(Santa Clara,CA)。如先前論述，半導體基板可能係其上待形成應激子層或任何其他功能層之任何半導電材料。可於一個實例中使用其上形成GeSn或SiGeSn層之矽或鍺基板。
在步驟404處，處理腔室加熱至第一溫度。第一溫度可低於65℃，較佳實施例溫度自20℃至60℃。
之後，在步驟406處，氨及三氟化氮氣體引入腔室，以在第一溫度形成電漿氣體混合物。該等氣體應將在真空狀態下引入，因為真空狀態將有益於移除在清潔製程期間產生的揮發性組分。引入腔室的各個氣體量係可變的，以及可調節各個氣體量以適應(例如)待移除氧化層之厚度、清潔基板之幾何形狀、電漿體積容量、處理腔室體積容量及耦接至處理腔室之真空系統的能力。在一或多個實施例中，增加氣體以便提供氨比三氟化氮之莫耳比率至少為1：1的氣體混合物。在另一態樣中，氣體混合物之莫耳比率至少約3：1莫耳比率(氨比三氟化氮)。較佳地，氣體引入腔室之莫耳比率自5：1(氨比三氟化氮)至30：1。
氣體混合物之後可在處理腔室內部使用DC或RF電源轉換至電漿。示範性實施例包括使用RF電源提供自約5瓦 特至約600瓦特之RF功率，以對氣體混合物點火產生電漿。較佳之實施例包括使用小於100瓦特之RF功率。電漿能將氨及三氟化氮氣體分離成反應性物質，該等反應性物質在氣相中組合形成高反應性氟化銨(ammonia fluoride；NH4F)化合物及/或氟化氫銨(ammonium hydrogen fluoride；NH4F.HF)。NH4F及NH4F.HF被認為與氧化矽反應形成六氟矽酸銨(ammonium hexafluorosilicate；(NH4)2SiF6)、SiF6、NH3及H2O；及與氧化鍺反應形成六氟鍺酸銨(ammonium hexafluorogermanate；(NH4)2GeF6)、GeF6、NH3及H2O。NH3及H2O在反應溫度及壓力下呈氣態，並且從處理腔室內移除，在GeSn或SiGeSn層無氧化物之表面上留下(NH4)2SiF6薄膜。
之後，在步驟408處，處理腔室可加熱至第二溫度。第二溫度可高於80℃的溫度，較佳實施例溫度自80℃至150℃。在高於80℃溫度時，(NH4)2SiF6或(NH4)2GeF6薄膜可分離或昇華成揮發性SiF4、NH3及HF產物。在揮發性組分變為氣態之後，可從腔室內移除該等揮發性組分，僅留下已清潔的表面。
在步驟410處，具有已清潔的GeSn或SiGeSn表面之基板可在真空或有惰性氣體的情況下傳送至沉積腔室。惰性氣體可從所有惰性氣體列表中選出，包括氮、氬、氦。可保持腔室內之環境，以保證在傳送期間無進一步表面污染物累積。沉積腔室可係可用於沉積上述上覆層之一之任何腔室。
在步驟412處，上覆層沉積於已清潔的GeSn或SiGeSn層之表面上。如先前所述，上覆層可包含Ge、摻雜 Ge、GeSn層、SiGeSn層、摻雜GeSn層、摻雜SiGeSn層、絕緣體或金屬。上覆層可藉由在沉積該等層之技術中之任何已知的技術(諸如CVD或PVD)進行沉積。參閱第1圖之圖示，上覆層沉積之其他參數及示範性實施例亦適用於此處。為簡短起見，本文以引用方式合併該等其他參數及示範性實施例。
本發明提供多種準備GeSn或SiGeSn層清潔表面用於後續沉積之方法。Ge、摻雜Ge、另一GeSn或SiGeSn層、摻雜GeSn或SiGeSn層、絕緣體或金屬之上覆層可藉由以下步驟沉積於已準備之GeSn或SiGeSn層上：在處理腔室內安置具有暴露的GeSn或SiGeSn層之基板，加熱處理腔室及向處理腔室流入鹵化物氣體以使用熱蝕刻或電漿輔助蝕刻來蝕刻該基板表面，在此之後於實質上無氧化物及污染物的表面上沉積上覆層。在其他實施例中，準備GeSn或SiGeSn層清潔表面之方法亦可包括放置及蝕刻犧牲層，以便上覆層之後續沉積。在又一實施例中，準備GeSn或SiGeSn層清潔表面之方法亦可包括使用快速熱退火進行熱脫附。在另一實施例中，準備GeSn或SiGeSn層清潔表面之方法亦可包括：向處理腔室內流入NF3及NH3電漿氣體混合物，形成鹽混合物(包括表面氧化物及污染物)，以及昇華鹽混合物。移除表面氧化物及污染物確保了後續沉積層之薄膜品質及介於上覆層與GeSn或SiGeSn層之間的介面品質。因此，此預沉積處理導致處理之後較低的產物損失。
儘管上文所述係針對本發明之實施例，但是可在不 脫離本發明之基本範疇的情況下設計出本發明其他及進一步實施例。
200‧‧‧方法
202~216‧‧‧步驟

Claims (18)

  1. 一種用於準備一清潔GeSn或SiGeSn表面之方法，該方法包含以下步驟：在一處理腔室內安置一基板，其中該基板包含一暴露的GeSn或SiGeSn層；將該處理腔室加熱至一第一溫度；在該第一溫度向該處理腔室流入一蝕刻氣體，其中該蝕刻氣體包含一鹵化物氣體；使用熱蝕刻或電漿輔助蝕刻在該第一溫度蝕刻該基板之該表面以產生一已清潔表面；以及於該已清潔表面之上沉積一上覆層，其中該上覆層包含Ge、摻雜Ge、一GeSn層、一SiGeSn層、一摻雜GeSn層、一摻雜SiGeSn層、一絕緣體或一金屬之中一者。
  2. 如請求項1所述之方法，其中該第一溫度自300℃至400℃。
  3. 如請求項1所述之方法，其中該鹵化物氣體係氯或氯化氫。
  4. 如請求項1所述之方法，其中該摻雜劑包含磷(P)、硼(B)或砷(As)中之一者。
  5. 一種用於準備一清潔GeSn或SiGeSn表面之方法，包含以下步驟：在一第一處理腔室內安置一基板，其中該基板包含一GeSn或SiGeSn層，該GeSn或SiGeSn層具有一犧牲性保護鍺帽，且其中該犧牲性保護鍺帽係在GeSn或SiGeSn形成之後但是在暴露至氧或污染物之前形成；將該基板傳送至一第二處理腔室；將該第二處理腔室加熱至一第一溫度；在該第一溫度向該第二處理腔室流入一蝕刻氣體，其中該蝕刻氣體包含鹵化物氣體；使用熱蝕刻或電漿輔助蝕刻在該第一溫度蝕刻該犧牲帽，以便暴露一清潔GeSn或SiGeSn層；以及於該已清潔表面之上沉積一上覆層，其中該上覆層包含Ge、摻雜Ge、一GeSn層、一SiGeSn層、一摻雜GeSn層、一摻雜SiGeSn層、一絕緣體或一金屬中之一者。
  6. 如請求項5所述之方法，其中該犧牲性保護鍺帽之厚度自20埃至40埃。
  7. 如請求項5所述之方法，其中該第一溫度自300℃至400℃。
  8. 如請求項5所述之方法，其中該鹵化物氣體係氯或氯化氫。
  9. 如請求項5所述之方法，其中該摻雜劑包含磷(P)、硼(B)或砷(As)中之一者。
  10. 一種用於準備一清潔GeSn或SiGeSn表面之方法，該方法包含以下步驟：在一處理腔室內安置一基板，其中該基板包含一暴露的GeSn或SiGeSn層；向該腔室內流入H2，同時保持一恆定壓力；將該腔室加熱至一第一溫度，同時保持H2該流動，以產生一已清潔的表面，其中該溫度係高於450℃並保持持續一短時期；將該腔室冷卻至400℃以下的一溫度；以及於該已清潔表面之頂部沉積一上覆層，其中該上覆層包含Ge、摻雜Ge、一GeSn層、一SiGeSn層、一摻雜GeSn層、一摻雜SiGeSn層、一絕緣體或一金屬中之一者。
  11. 如請求項10所述之方法，其中該第一溫度自450℃至650℃。
  12. 如請求項10所述之方法，其中該摻雜劑包含磷(P)、硼(B)或砷(As)中之一者。
  13. 如請求項10所述之方法，其中該短時期小於1分鐘。
  14. 如請求項10所述之方法，進一步包含以下步驟：在加熱至該第一溫度時應用紫外線燈。
  15. 一種用於準備一清潔GeSn或SiGeSn表面之方法，該方法包含以下步驟：在一處理腔室內安置一基板，其中該基板包含一暴露的GeSn或SiGeSn層，該GeSn或SiGeSn層具有一或多種表面污染物；將該處理腔室調整至一第一溫度；在該第一溫度向該處理腔室流入NF3與NH3電漿氣體混合物，以形成一鹽混合物，其中該鹽混合物包含該等表面污染物；將該基板加熱至一第二溫度，以昇華該鹽混合物，產生一已清潔的表面；將該已清潔基板安置至一沉積腔室，其中保持真空狀態；以及於該已清潔表面之頂部沉積一上覆層，其中該上覆層包含Ge、摻雜Ge、一GeSn層、一SiGeSn層、一摻雜GeSn層、一摻雜SiGeSn層、一絕緣體或一金屬中之一者。
  16. 如請求項15所述之方法，其中該第一溫度係自20℃至60℃。
  17. 如請求項15所述之方法，其中該第二溫度係自80℃至150℃。
  18. 如請求項15所述之方法，其中該摻雜劑包含磷(P)、硼(B)或砷(As)中之一者。
TW102113639A 2012-04-26 2013-04-17 磊晶鍺錫合金表面處理的方法 TWI588887B (zh)

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