TW201447937A - 帶有使用高磁導率材料的通量集中的耦合個別電感器 - Google Patents

帶有使用高磁導率材料的通量集中的耦合個別電感器 Download PDF

Info

Publication number
TW201447937A
TW201447937A TW103107468A TW103107468A TW201447937A TW 201447937 A TW201447937 A TW 201447937A TW 103107468 A TW103107468 A TW 103107468A TW 103107468 A TW103107468 A TW 103107468A TW 201447937 A TW201447937 A TW 201447937A
Authority
TW
Taiwan
Prior art keywords
inductor
coupled
individual
inductor structure
implementations
Prior art date
Application number
TW103107468A
Other languages
English (en)
Chinese (zh)
Inventor
多伊爾詹姆斯湯瑪士
亞朗尼亞米拉里夏昂
瑪姆狄法爾席德
Original Assignee
高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通公司 filed Critical 高通公司
Publication of TW201447937A publication Critical patent/TW201447937A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/02—Fixed inductances of the signal type without magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/02—Fixed inductances of the signal type without magnetic core
    • H01F17/03—Fixed inductances of the signal type without magnetic core with ceramic former
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/29—Terminals; Tapping arrangements for signal inductances
    • H01F27/292—Surface mounted devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H01F27/366—Electric or magnetic shields or screens made of ferromagnetic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)
TW103107468A 2013-03-08 2014-03-05 帶有使用高磁導率材料的通量集中的耦合個別電感器 TW201447937A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/791,113 US20140253279A1 (en) 2013-03-08 2013-03-08 Coupled discrete inductor with flux concentration using high permeable material

Publications (1)

Publication Number Publication Date
TW201447937A true TW201447937A (zh) 2014-12-16

Family

ID=50290315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107468A TW201447937A (zh) 2013-03-08 2014-03-05 帶有使用高磁導率材料的通量集中的耦合個別電感器

Country Status (3)

Country Link
US (1) US20140253279A1 (fr)
TW (1) TW201447937A (fr)
WO (1) WO2014137902A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10123418B1 (en) 2017-12-13 2018-11-06 Unimicron Technology Corp. Circuit board structure and manufacturing method thereof
CN114203423A (zh) * 2020-09-02 2022-03-18 株式会社村田制作所 电子部件

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6163702B2 (ja) * 2014-12-09 2017-07-19 インテル・コーポレーション パッケージ基板または装置の製造方法
KR102117512B1 (ko) * 2015-07-01 2020-06-01 삼성전기주식회사 코일 부품 및 그 실장 기판
US11245329B2 (en) 2017-09-29 2022-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Power module
US11024589B2 (en) * 2017-10-13 2021-06-01 Oracle International Corporation Distributing on chip inductors for monolithic voltage regulation

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985735A (en) * 1959-01-19 1961-05-23 New Electronic Products Ltd Electric relays
DE1151869B (de) * 1960-07-11 1963-07-25 Licentia Gmbh Kernlose Starkstromdrosselspule mit magnetisch leitenden Jochen
JPH0689811A (ja) * 1992-09-07 1994-03-29 Nippon Steel Corp 薄型インダクタ／トランスおよびその製造方法
US5478773A (en) * 1994-04-28 1995-12-26 Motorola, Inc. Method of making an electronic device having an integrated inductor
US6675463B2 (en) * 1997-09-12 2004-01-13 General Electric Company Methods for forming torodial windings for current sensors
JPH11121257A (ja) * 1997-10-15 1999-04-30 Toshiba Corp 磁気シールド付き空心形リアクトル
US6310386B1 (en) * 1998-12-17 2001-10-30 Philips Electronics North America Corp. High performance chip/package inductor integration
JP2002008931A (ja) * 2000-04-18 2002-01-11 Taiyo Yuden Co Ltd 巻線型コモンモードチョークコイル
AU2001296724A1 (en) * 2000-10-10 2002-04-22 Primarion, Inc. Microelectronic magnetic structure, device including the structure, and methods of forming the structure and device
EP1340040A4 (fr) * 2000-11-30 2007-02-28 Asylum Research Corp Transformateurs differentiels a variation lineaire ameliores pour mesures de position de grande precision
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US6674646B1 (en) * 2001-10-05 2004-01-06 Skyworks Solutions, Inc. Voltage regulation for semiconductor dies and related structure
US6512285B1 (en) * 2001-10-05 2003-01-28 Skyworks Solutions, Inc. High inductance inductor in a semiconductor package
JP2004111676A (ja) * 2002-09-19 2004-04-08 Toshiba Corp 半導体装置、半導体パッケージ用部材、半導体装置の製造方法
US20120062207A1 (en) * 2002-12-13 2012-03-15 Alexandr Ikriannikov Powder Core Material Coupled Inductors And Associated Methods
US7965165B2 (en) * 2002-12-13 2011-06-21 Volterra Semiconductor Corporation Method for making magnetic components with M-phase coupling, and related inductor structures
US6825559B2 (en) * 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US7919787B2 (en) * 2003-06-27 2011-04-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Semiconductor device with a light emitting semiconductor die
US7280024B2 (en) * 2005-02-02 2007-10-09 Intel Corporation Integrated transformer structure and method of fabrication
JP4856890B2 (ja) * 2005-04-28 2012-01-18 スミダコーポレーション株式会社 チョークコイル
US7808075B1 (en) * 2006-02-07 2010-10-05 Marvell International Ltd. Integrated circuit devices with ESD and I/O protection
CN100536042C (zh) * 2006-02-16 2009-09-02 上海交通大学 基于非晶FeCuNbCrSiB磁性薄膜的螺线管微电感器件
US9147644B2 (en) * 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
US7986209B2 (en) * 2007-11-20 2011-07-26 Intel Corporation Inductor using bulk metallic glass material
US7795700B2 (en) * 2008-02-28 2010-09-14 Broadcom Corporation Inductively coupled integrated circuit with magnetic communication path and methods for use therewith
WO2009114873A1 (fr) * 2008-03-14 2009-09-17 Volterra Semiconductor Corporation Inducteur convertisseur de tension ayant une valeur d’inductance négative
US9859043B2 (en) * 2008-07-11 2018-01-02 Cooper Technologies Company Magnetic components and methods of manufacturing the same
US8040212B2 (en) * 2009-07-22 2011-10-18 Volterra Semiconductor Corporation Low profile inductors for high density circuit boards
US9723766B2 (en) * 2010-09-10 2017-08-01 Intersil Americas LLC Power supply module with electromagnetic-interference (EMI) shielding, cooling, or both shielding and cooling, along two or more sides
US9088215B2 (en) * 2011-06-08 2015-07-21 Futurewei Technologies, Inc. Power converter package structure and method
KR101209979B1 (ko) * 2011-10-24 2012-12-07 엘지이노텍 주식회사 차폐장치 및 무선전력 송신장치
US8976561B2 (en) * 2012-11-14 2015-03-10 Power Integrations, Inc. Switch mode power converters using magnetically coupled galvanically isolated lead frame communication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10123418B1 (en) 2017-12-13 2018-11-06 Unimicron Technology Corp. Circuit board structure and manufacturing method thereof
CN114203423A (zh) * 2020-09-02 2022-03-18 株式会社村田制作所 电子部件
CN114203423B (zh) * 2020-09-02 2025-09-02 株式会社村田制作所 电子部件

Also Published As

Publication number Publication date
US20140253279A1 (en) 2014-09-11
WO2014137902A1 (fr) 2014-09-12

Similar Documents

Publication Publication Date Title
US10115661B2 (en) Substrate-less discrete coupled inductor structure
EP2956948B1 (fr) Structure d'inducteur couplée dans un substrat
KR101589041B1 (ko) 자기 코어 인덕터(ｍｃｉ) 다이 및 이를 포함하는 반도체 패키지와 mci 다이를 제조하는 방법
CN104160513B (zh) 芯片上具有磁性的小尺寸和全集成的功率转换器
US8102236B1 (en) Thin film inductor with integrated gaps
TW201447937A (zh) 帶有使用高磁導率材料的通量集中的耦合個別電感器
JP6377178B2 (ja) 埋込型パッケージ基板コンデンサ
JP2008171965A (ja) 超小型電力変換装置
KR102541387B1 (ko) 인덕터들을 갖는 유리 웨이퍼를 이용한 진보된-노드 soc(system-on-chip)를 갖는 인덕터들의 통합 및 웨이퍼간 결합
CN108352244A (zh) 用于封装上电压调节器的磁性小占用面积电感器阵列模块
US9006862B2 (en) Electronic semiconductor device with integrated inductor, and manufacturing method
JP2024516540A (ja) ３次元（３ｄ）垂直スパイラルインダクタおよび変圧器
CN105304607B (zh) 三维对称型垂直变压器
TW201730902A (zh) 具有被形成在核心上的線圈之電子封裝體
Kim et al. Design of a packaged multi-radius multi-path solenoidal inductor for redistribution layers
TWI646652B (zh) 電感組合及其線路結構
CN104637926B (zh) 三维堆叠封装芯片中的电感及其制备方法
US20160049458A1 (en) Fishbone lc component and method of making the same
Eshkoli et al. High performance integrated inductors for power management applications