TW201613029A - Bearing apparatus and semiconductor processing device - Google Patents

Bearing apparatus and semiconductor processing device

Info

Publication number
TW201613029A
TW201613029A TW104130452A TW104130452A TW201613029A TW 201613029 A TW201613029 A TW 201613029A TW 104130452 A TW104130452 A TW 104130452A TW 104130452 A TW104130452 A TW 104130452A TW 201613029 A TW201613029 A TW 201613029A
Authority
TW
Taiwan
Prior art keywords
peripheral
bearing apparatus
temperature
workpiece
processed
Prior art date
Application number
TW104130452A
Other languages
Chinese (zh)
Other versions
TWI560804B (en
Inventor
You-Shan Zheng
Yu-Lin Peng
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of TW201613029A publication Critical patent/TW201613029A/en
Application granted granted Critical
Publication of TWI560804B publication Critical patent/TWI560804B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A bearing apparatus and a semiconductor processing device. The bearing apparatus comprises a static chuck, a central temperature control unit, a peripheral temperature control unit and a peripheral component, wherein the central temperature control unit is arranged inside the static chuck for adjusting the temperature of the central area of a workpiece to be processed borne by the static chuck, the peripheral component is arranged surrounding a peripheral wall of the static chuck and comprises a focusing ring, a base ring and an insulation ring which are overlaid in sequence, and the peripheral temperature control unit is arranged inside the peripheral component for adjusting the temperature of the peripheral area of the workpiece to be processed by means of heat exchange. The bearing apparatus can adjust the temperature of the peripheral area of the workpiece to be processed, and thus it can compensate the temperature difference between the peripheral area and the central area of the workpiece to be processed, thereby improving the technique uniformity.
TW104130452A 2014-09-19 2015-09-15 Bearing apparatus and semiconductor processing device TW201613029A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410484756.8A CN105489527B (en) 2014-09-19 2014-09-19 Bogey and semiconductor processing equipment

Publications (2)

Publication Number Publication Date
TW201613029A true TW201613029A (en) 2016-04-01
TWI560804B TWI560804B (en) 2016-12-01

Family

ID=55532573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130452A TW201613029A (en) 2014-09-19 2015-09-15 Bearing apparatus and semiconductor processing device

Country Status (6)

Country Link
JP (1) JP2017533582A (en)
KR (1) KR20170048469A (en)
CN (1) CN105489527B (en)
SG (1) SG11201702039YA (en)
TW (1) TW201613029A (en)
WO (1) WO2016041519A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106856188B (en) * 2015-12-08 2020-02-14 北京北方华创微电子装备有限公司 Bearing device and semiconductor processing equipment
CN108987323B (en) 2017-06-05 2020-03-31 北京北方华创微电子装备有限公司 Bearing device and semiconductor processing equipment
CN112786422B (en) * 2019-11-08 2024-03-12 中微半导体设备(上海)股份有限公司 Focusing ring, plasma processor and method
CN111060223A (en) * 2019-12-26 2020-04-24 北京北方华创微电子装备有限公司 Chuck temperature calibration device and chuck temperature calibration method
CN111607785A (en) * 2020-05-26 2020-09-01 北京北方华创微电子装备有限公司 A heating device and semiconductor processing equipment
JP7409976B2 (en) * 2020-06-22 2024-01-09 東京エレクトロン株式会社 How to replace plasma processing system, plasma processing equipment and edge ring
CN112435913B (en) * 2020-11-23 2024-04-12 北京北方华创微电子装备有限公司 Semiconductor device and lower electrode thereof
CN112658804B (en) * 2020-12-22 2023-01-06 宁波江丰电子材料股份有限公司 Processing equipment and method for semiconductor focusing ring
CN112509954B (en) * 2021-02-04 2021-06-08 北京中硅泰克精密技术有限公司 Semiconductor process equipment and bearing device thereof
KR102451782B1 (en) * 2021-08-27 2022-10-11 주식회사 동탄이엔지 Edge ring capable of temperature compensation and substrate processing apparatus including the same
CN114086146B (en) * 2021-11-18 2023-09-08 北京北方华创微电子装备有限公司 Semiconductor process equipment and bearing device thereof
CN118507384A (en) * 2024-01-16 2024-08-16 北京北方华创微电子装备有限公司 Bearing device and semiconductor process equipment

Family Cites Families (20)

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JPH0474418U (en) * 1990-11-07 1992-06-30
JP3583289B2 (en) * 1998-05-28 2004-11-04 株式会社日立製作所 Plasma processing apparatus and plasma processing method
JP2000277237A (en) * 1999-03-24 2000-10-06 Komatsu Ltd Substrate temperature control plate and substrate temperature control device including the same
JP4344835B2 (en) * 2002-10-24 2009-10-14 東京エレクトロン株式会社 Single wafer processing equipment
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4439853B2 (en) * 2003-07-08 2010-03-24 東京エレクトロン株式会社 Plasma processing apparatus, focus ring, and plasma processing method
JP5183058B2 (en) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド Substrate processing with rapid temperature gradient control
JP5188696B2 (en) * 2006-11-01 2013-04-24 株式会社日立ハイテクノロジーズ Wafer mounting electrode
CN101465313A (en) * 2007-12-18 2009-06-24 北京北方微电子基地设备工艺研究中心有限责任公司 Technique component of electrostatic chuck
CN101471275B (en) * 2007-12-26 2011-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 Device for holding substance to be processed
JP4450106B1 (en) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 Mounting table structure and processing device
JP5217569B2 (en) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 Plasma processing equipment
JP5274918B2 (en) * 2008-07-07 2013-08-28 東京エレクトロン株式会社 Method for controlling temperature of chamber inner member of plasma processing apparatus, chamber inner member and substrate mounting table, and plasma processing apparatus including the same
TWI385725B (en) * 2009-09-18 2013-02-11 Advanced Micro Fab Equip Inc A structure that reduces the deposition of polymer on the backside of the substrate
JP5195711B2 (en) * 2009-10-13 2013-05-15 東京エレクトロン株式会社 Substrate cooling device, substrate cooling method, and storage medium
JP5496630B2 (en) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 Electrostatic chuck device
JP5101665B2 (en) * 2010-06-30 2012-12-19 東京エレクトロン株式会社 Substrate mounting table, substrate processing apparatus, and substrate processing system
JP5642531B2 (en) * 2010-12-22 2014-12-17 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
CN103794538B (en) * 2012-10-31 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 Electrostatic chuck and plasma processing device
JP5696183B2 (en) * 2013-07-19 2015-04-08 株式会社日立ハイテクノロジーズ Plasma processing equipment

Also Published As

Publication number Publication date
KR20170048469A (en) 2017-05-08
TWI560804B (en) 2016-12-01
SG11201702039YA (en) 2017-04-27
JP2017533582A (en) 2017-11-09
WO2016041519A1 (en) 2016-03-24
CN105489527A (en) 2016-04-13
CN105489527B (en) 2018-11-06

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