TW201621966A - Charged particle device for treatment of a moveable substrate and method for treatment of a moving substrate in a processing system - Google Patents

Abstract

According to the present disclosure, a charged particle device for treatment of a moveable substrate and a method for treatment of a moving substrate in a processing system are provided. The charged particle device includes a source for forming a beam of charged particles for treatment of the substrate moving along a transport direction and a beam displacement device for moving the beam of charged particles from a first beam trajectory to at least a second beam trajectory along the transport direction.

Description

Charged particle device for processing a movable substrate and method for processing a moving substrate in a processing system

The present disclosure is directed to an apparatus and method for processing a flexible substrate. In particular, the present disclosure relates to an apparatus and method for treating a flexible substrate using a charged particle beam to make the processing of the substrate more homogeneous.

Electron sources are known in many fields. For example, electron beam systems are used for material modification, surface charge accumulation, sample imaging, and the like.

In order to reduce the cost of ownership, today's manufacturing processes for processing large area substrates or flexible substrates, such as those used to make large area foils, thin film solar cells, and the like, have a tendency toward increasing overall processing rates. Furthermore, in order to increase the throughput of the manufacturing equipment, the energy density provided by the source on the substrate, foil, thin layer, or soft substrate may also increase in some processes.

The use of an electron source during the manufacturing process can cause a discharge (eg, an arc) that can disrupt and/or interrupt the voltage supply. Disrupting and/or interrupting, for example, the voltage supply of the electron source during the manufacturing process can cause interruption of the electron beam, possibly reducing the quality of the substrate being fabricated. Even if this interruption occurs only in a small fraction of a second (eg, a few milliseconds), the detrimental effects on the substrate may be sufficient to render the substrate unusable.

Accordingly, there is currently a continuing need for improved apparatus and methods for processing flexible substrates using electronic sources.

In view of the above, according to one aspect, the present disclosure provides a charged particle device for processing a movable substrate. The device includes: a source and a beam displacement device. The source is used to form a charged particle beam to process the substrate moving in the transport direction. The beam displacement device is configured to move the charged particle beam from a first beam trajectory along the transport direction to at least one second beam trajectory.

Still further, the present disclosure provides a method for processing a moving substrate in a processing system. The method includes: moving a substrate in a transport direction; processing the substrate with a charged particle beam; detecting a first error signal; and causing the charged particle beam to be transported by a first beam trajectory when the first error signal is detected The direction moves to a second beam trajectory.

Further aspects, advantages and features of the present disclosure are apparent from the scope of the appended claims, the embodiments, and the drawings.

Some of the above embodiments will be described in more detail in the following description of the exemplary embodiments with reference to the following drawings:

Component symbols will now be used in detail for different embodiments, one or more examples of which are illustrated in each of the drawings. In the following description of the drawings, the same element symbols represent the same elements. In general, only the differences of the individual embodiments are described. Each embodiment is provided for purposes of explanation and not for limitation. For example, features illustrated or described as part of one embodiment can be used in other embodiments or in conjunction with other embodiments to produce a further embodiment. This disclosure is intended to include such modifications or variations.

The embodiments described herein relate to electron sources, particularly linear electron sources, and methods of operating electron sources that can be used in a variety of applications. According to embodiments herein, the charged particle beam produced by the electron source can be moved to improve the manufacturing process of today's substrates, including films, sheets, foils, flexible substrates, and the like. The charged particle device and method described herein are not limited to the use of a flexible substrate, but can be similarly used for the treatment of a steel substrate. The term "substrate" as used herein shall mean both a non-flexible substrate (for example, a wafer or a glass plate) and a flexible substrate (for example, a flexible substrate and a foil), and alternately use "charged particle beam" and The term "bundle".

According to embodiments herein, a charged particle device provides processing for a substrate, particularly for a substrate that is movable. The charged particle device may comprise a charged particle source for forming a charged particle beam for processing a substrate moving in the transport direction. For example, a charged particle source can form a linear charged particle (eg, electron) beam. According to embodiments herein, a charged particle device can be used for a polymerization reaction, for example, a polymer film can be formed on a flexible substrate.

According to embodiments herein, the charged particle device may be more suitable to beneficially move the charged particle beam from a first position in at least one of the substrate transport directions to at least a second position, the substrate being movable in the transport direction. Moving the charged particle beam can include changing the path of the charged particle beam by the first path or the first beam trajectory along at least the transport direction of the substrate to the second path or a second beam trajectory. Without being limited to any of the embodiments herein, the charged particle device may be additionally adapted to move the charged particle beam in a direction opposite to the transport direction of the substrate.

In accordance with embodiments described herein, a method for processing a substrate, particularly a method for processing a moving substrate in a processing system, is provided. This method improves the quality of the substrate to be processed and the manufacturing efficiency of the substrate to be processed. The method includes processing a charged particle beam for a substrate moving in a transport direction, and transporting the charged particle beam along the substrate when receiving an error signal indicative of an error on the substrate and/or an error during processing mobile.

In embodiments herein, this error signal may, for example, be indicative of an arc that has occurred during processing of the substrate. In general, the use of high voltages in charged particle devices to process substrates can result in sporadic arcing that can cause the charged particle beam to be interrupted for a few milliseconds. The interruption of the charged particle beam can cause some portions of the substrate to be untreated, in particular if the substrate is moved in the transport direction. According to the method of the embodiments herein, in order to process a portion of the substrate that has not been processed due to interruption of the charged particle beam caused by, for example, an arc, the charged particle beam can be moved in the transport direction of the moving substrate.

1 through 3 illustrate a charged particle device 100 for processing a substrate over time in accordance with an embodiment herein. The charged particle device 100 includes a housing 112 that serves as an anode for an electron source. The front portion 113 of the outer casing 112 has an opening 114, such as a slit opening. The lateral cross section of the opening may cover at least 1/10 of the width of the substrate. According to embodiments herein, the lateral cross section of the opening can be described as an extension of the opening in the direction of the width of the substrate. For example, the size of the opening can be a substrate width of at least 1/10 along the width of the substrate. According to embodiments herein, the width of the charged particle beam (i.e., the dimension along the substrate transport direction) may be from 3 millimeters (mm) to 3 centimeters (cm) in the plane of the substrate. In the embodiments herein, the opening 114 measured perpendicular to the longitudinal direction of the charged particle device 100 may for example be from 3 mm to 8 mm, for example 4 mm or 6 mm. In the outer casing 112, a cathode 110 is provided. Electrons generated in the outer casing and accelerated toward the front portion 113 of the outer casing 112 can exit the linear electron source through the opening 114.

According to various embodiments, the anode can be made, for example, of a material similar to copper, aluminum, steel, mixtures thereof, and the like. According to various embodiments, which may be combined with other embodiments described herein, the cathode may comprise a material selected from the group consisting of steel, stainless steel, copper, aluminum, graphite, carbon-fiber-reinforced carbon (CFC), composites thereof, A material of a group consisting of or a mixture thereof.

According to embodiments described herein that can be combined with other embodiments of charged particle devices, the charged particle device can be mounted in a vacuum chamber (not shown). The outer region of the outer casing 112 and particularly the region between the opening 114 of the electron source and the target for influencing electrons can be withdrawn to a pressure of, for example, 10 ^-1 to 10 ^-9 mbar. The charged particle device 100 can be coupled to a gas supply (not shown) having a gas conduit. The flow of gas can be regulated such that the pressure in the outer casing corresponds to a pressure above 10 ^-3 mbar, typically a pressure above 10 ^-2 mbar. According to various embodiments described herein, the gas injected into the outer casing 112 through, for example, an air conduit may be at least a group of inert gases (eg, argon, nitrogen (N ₂ ) gas, oxygen (O _{2 )} ), and mixtures thereof).

According to embodiments described herein that can be combined with other embodiments described herein, the cathode 110 can be coupled to a variable power source by an electrical conduit or conductor (i.e., electrical connector 120). Electrical conductors can pass through the isolated cathode support 122. According to yet another embodiment, the isolated cathode support 122 can also be provided in a gas-tight manner such that the pressure differential between the interior of the outer casing 112 and the exterior of the outer casing 112 can be maintained. The outer casing 112 can be grounded and serves as an anode. The voltage between the cathode 110 and the anode can cause the generation of plasma. The charged particles (such as electrons) generated in the plasma can be accelerated toward the anode. The electrons accelerated toward the front portion 113 are separated from the charged particle device 100 through the opening 114 as an electron beam.

In accordance with embodiments described herein, in addition to one or more isolated cathode supports, the cathode may be coupled to the rear wall of the housing of charged particles by one or more electrically insulating cathode support members 124, such as 2 , 3, 4 or more electrically insulated cathode support elements (for example, Figure 11). According to embodiments herein, one or more electrically insulating cathode support members can support the cathode and ensure that the cathode and the rear wall of the outer casing have the same spacing in the parallel direction of the longitudinal direction of the charged particle device. This ensures that a predetermined dark region is provided between the cathode and the rear wall of the outer casing. In embodiments herein, one or more electrically insulating cathode support members may be guided, for example, by holes through the rear wall of the outer casing. In order to allow for thermal expansion of the cathode, particularly to permit thermal expansion of the cathode in parallel directions along the length of the charged particle device, one or more electrically insulating cathode support members may be configured to be movable (e.g., spring loaded).

Further, the charged particle device can be adapted to increase the extraction efficiency of the charged particles by a charged particle source projected onto the substrate as a charged particle beam. Increasing the extraction efficiency may include minimizing secondary emission and increasing the energy transfer efficiency of the charged particle device to the pretreated substrate. For example, charged particle devices as illustrated and described with respect to Figures 12 through 14 may also be provided in the embodiments described with respect to Figures 1 through 11. This increased extraction efficiency can be beneficial for positioning a beam displacement device.

According to some embodiments, the power supply for providing a voltage to the cathode 110 is adapted to controllably provide a voltage ranging, for example, from -5 kV to -30 kV (typically in the range -5 kV to -14 kV). Figure 1 is a cross-sectional view showing a charged particle device. The cathode 110 can be mounted within the outer casing 112 and can be spaced apart from the outer casing 112. Typically, the cathode 110 can be spaced apart from the outer casing 112 to a distance sufficient to substantially reduce or prevent arcing, and can be, for example, from 2 to 12 mm, typically from 3 to 8 mm, such as from 4 to 5 mm. In the scope of. According to embodiments described herein, the space between the cathode and the outer casing can be selected to be sufficiently large to prevent arcing, and can be selected to be small enough to be in the region where gas discharge is not expected to occur (eg, in addition to the charged particle device 100) The region before the cathode, the region between the cathode 110 and the opening 114, substantially prevents gas discharge between the cathode and the outer casing.

According to various embodiments described herein that are applicable to embodiments of the charged particle device described herein, the energy distribution of the emitted linear electron beam can be controlled by the potential of the cathode and the pressure in the outer casing 112. For example, for a relatively thick cathode sheath and a relatively thin plasma region, a plurality of different energies can be generated depending on the location of electrons generated in the cathode sheath. This thin plasma region reduces the likelihood of energy loss in the plasma region. However, if the thickness of the plasma region is increased, the possibility that electrons generated in the cathode sheath react with electrons and ions in the plasma region may increase. High-energy electrons generated in the cathode sheath that react with electrons and ions in the plasma region can dissipate energy to other particles, which may result in a smaller energy distribution. According to embodiments described herein, the energy distribution (FWHM) can typically be less than 50%, 30%, or 10% of the maximum electron energy by adjusting the operating parameters. For example, a value of less than 1000 electron volts (eV) can be produced, such as 100 or 10 eV. It will be apparent to those of ordinary skill in the art that the values of the energy distribution widths mentioned above will also have a minimum resulting from a theoretical minimum and may be in the range of 0.1 to 1 eV.

According to embodiments herein, the shape of the cathode 110 can include a recess 111. The recess 111 advantageously promotes better guidance of the initial rate of charged particles generated in the vicinity of the cathode 110 toward the front portion 113, particularly toward the opening 114 of the charged particle device 100. According to a further embodiment, the second electrode or cathode may comprise one or more beam shaping extensions protruding from the first side of the second electrode toward the front wall of the housing for guiding through the slit opening The charged particle beam is, for example, as shown in Figures 12, 13 and 14.

The charged particle device 100 illustrated in Figures 1 through 3 shows the processing of the substrate over time in accordance with embodiments herein. The embodiment shown in FIG. 1 includes a charged particle device 100 that forms a charged particle beam 115 of a guide substrate 117. The substrate moves in the transport direction 101. The charged particle beam 115 can be directed along the first axis 102 to the substrate. The first axis 102 can correspond to a starting position of the charged particles, a starting axis, a first angle, or a first beam trajectory. The first shaft 102 can be, for example, a surface that is perpendicular to the substrate 117.

During processing of the substrate 117 moving along the direction of movement 101, a short circuit (eg, due to an arc) may, for example, interrupt the charged particle beam 115. The interruption of the charged particle beam 115 can last for a few milliseconds and can result in an unprocessed region 118 on the substrate 117 (hereinafter generally referred to as "unprocessed region").

In order to ensure beneficial uniformity of the substrate and to be subjected to continuous processing when a short circuit is detected, the charged particle device 100 according to embodiments herein can be adapted to change the position or angle of the charged particle beam 115 at least along the direction of movement 101 of the substrate 117.

The geometry of the charged particle device shown in the drawings, particularly the cross-sectional views shown, for example, in Figures 1 through 3, illustrate an example of a charged particle device in accordance with embodiments herein. The particular geometry shown in the drawings is not intended to limit the scope of the disclosure in any way. Other suitable different geometries for charged particle devices are within the scope of the present disclosure. For example, charged particle devices as illustrated in Figures 12 through 14 and related to that may also be provided in the embodiments described herein. The increased extraction efficiency can be beneficial for locating a beam displacement device.

In embodiments described herein, charged particle device 100 may be suitable such that charged particle beam 115 may be moved from first position 106 along transport direction 101 of substrate 117 to second position 107. Similarly, it can be said that the charged particle beam is moved by the first beam trajectory along the transport direction of the substrate to the second beam trajectory. This movement is generally indicated by arrow 103 in Figure 2.

According to embodiments herein, the first location 106 can be described as an area of influence of the charged particle beam 115 on the substrate 117 when the charged particle beam 115 is directed along the first axis 102 to the substrate. The second position 107 can be described as an area of influence of the charged particle beam 115 on the substrate 117 when the charged particle beam 115 is guided along the second axis 105 (see FIG. 2).

In the embodiments described herein, when a short circuit is detected, the charged particle beam 115 can be moved along the transport direction 101 of the substrate 117 to the unprocessed area 118 on the substrate 117, for example, abruptly moving (also indicated herein as "jump"). The rate of movement of the charged particle beam 115 along the transport direction 101 can generally be greater than the rate of movement of the substrate 117 in the transport direction 101.

According to embodiments herein, the charged particle beam 115 can be moved from a first position 106 along the first axis 102 to a second position 107 along the second axis 105 by an angle alpha (α). In embodiments herein, the second axis may represent the second beam trajectory. The angle (α) 116 (hereinafter also referred to as the charged particle beam angle) may be defined as the angle between the first axis 102 and the second axis 105 of the charged particle beam 115. In the embodiments herein, the magnitude of the angle (α) 116 may vary with the rate of movement of the substrate 117 along the transport direction 101. In general, the maximum value of angle (α) 116 may depend on the physical limitations of charged particle device 100 and the transport system of substrate 117.

In general, according to embodiments herein, a larger charged particle beam angle a has a larger movement in the direction of movement along the substrate 117 than the smaller charged particle beam angle a. Distance 150 (please refer to Figure 2). The distance 150 at which the charged particle beam moves along the direction of transport of the substrate can generally be described as a first point projected onto the surface of the substrate 117 along the first axis 102 of the charged particle beam 115 and a second along the charged particle beam 115. The shaft 105 projects a shortest distance from the position between the second points on the surface of the substrate 117.

In the present embodiment, in order to process the unprocessed region 118 of the substrate 117 moving in the transport direction 101, the charged particle beam 115 may be along the transport direction 101 of the substrate 117 by the first charged particle beam angle (α) 116. Moving from the initial first position 106 to the second position 107. According to embodiments herein, when the charged particle beam 115 is moved from the first position 106 to the second position 107, the intensity of the charged particle beam 115 may change or remain unchanged.

For example, in embodiments herein, during the period in which the charged particle beam 115 is moved from the first position 106 to the second position 107 and/or back to the first position 106, a charged particle device may be suitable such that the intensity of the charged particle beam 115 is Can be adjusted. For example, to compensate for movement and/or previous processing, the intensity of the charged particle beam 115 can be varied (reduced or increased).

According to embodiments herein, the charged particle beam 115 may stay or pause for a first predetermined period of time at the second location 107. For example, the charged particle beam 115 can stay in the second position 107 until the untreated region 118 of the substrate 117 has completely moved through the charged particle beam 115. The charged particle beam 115 can stay in the second position 107 for at least 10 seconds, less than 5 seconds, or less than 1 second. The charged particle beam 115 can be moved back to the first position 106 by the second position 107 within a second predetermined period (see Figure 3). The total period (including the first and second predetermined periods) may be, for example, less than 10 seconds, less than 5 seconds, or a few milliseconds. According to embodiments herein, the total period of movement of the charged particle beam from the first position to the second position may be less than the total period during which the charged particle beam moves from the second position to the first position.

In embodiments herein, the first predetermined period in which the charged particle beam 115 stays at the second location 107 may depend on the total time of the short circuit, the total time during which the charged particle beam 115 is interrupted, the rate of movement of the substrate 117, and/or The intensity of the charged particle beam 115.

For example, the charged particle beam 115 can be in the second position as compared to when the untreated region 118 extends a small area across the substrate 117 in the transport direction 101. If the untreated region 118 extends a large area across the substrate 117 in the transport direction 101, the charged particle beam 115 can be in the second position. 107 maintains a long time.

In embodiments herein, charged particle device 100 may be adapted to move charged particle beam 115 from second position 107 back to first position 106 for a second predetermined period of time. The charged particle device 100 can move the charged particle beam 115 back to its original position at the first charged particle beam angle (α) 116 along the transport direction 101 of the substrate 117. In FIG. 3, the direction of movement of the charged particle beam 115 is generally indicated by arrow 104. In general, the charged particle beam 115 can gradually move back to the first position 106 from the second position 107 over time.

According to embodiments described herein, charged particle device 100 may be adapted such that the rate of movement of charged particle beam 115 from first position 106 to second position 107 may be greater than movement of charged particle beam 115 from second position 107 back to first position 106 The rate of movement.

FIG. 4 illustrates a different schematic diagram of the movement of the linear charged particle beam 115 of the charged particle device 100 with respect to the moving substrate 117 in accordance with embodiments described herein. When a short circuit is detected, the charged particle device can be adapted to move the charged particle beam 115 along the transport direction 101 of the substrate 117 to the unprocessed region 118 on the substrate 117.

According to a further embodiment, to completely expose the untreated region 118 to the linear charged particle beam 115, the charged particle beam 115 can be moved, for example, in the transport direction 101 slightly beyond the untreated region 118 of the substrate 117. The arrow 123 (shown in FIG. 4) generally indicates the direction of movement of the charged particle beam 115 in the transport direction 101 toward the untreated region 118. The arrow 125 (shown in Fig. 4) generally indicates the direction of movement of the charged particle beam 115 back to its original position in the opposite direction of the transport direction 101. The charged particle beam 115 is typically moved past the untreated zone 118 and then exits the untreated zone 118. When the charged particle beam 115 is moved past the untreated region 118, the charged particle beam is processed to the untreated region 118.

FIG. 5 illustrates temporal characteristics of a charged particle beam being moved with respect to one or more electrical discharges and one or more detection signals in accordance with embodiments described herein.

According to embodiments herein, for a brief interruption of the charged particle beam (e.g., 1 ms to 4 ms), the charged particle beam can be moved to the unprocessed area with a calculated value. After a predetermined time, the charged particle beam can return to its original position. The small skew angle, the strength of the skew signal (for example, current), and the magnetic field can be determined by the following formula [1].

J = k · vb · Ub1/2 / a formula [1]

In the above formula [1], k represents a constant, Ub represents an accelerating voltage, vb represents a substrate rate, and a represents a distance between a charged particle source and a substrate.

The first portion of graph 500 represents the movement of charged particles over time in the case of a single arc. With respect to the first portion of graph 500, first error signal 501 represents an arc that can be detected by the charged particle device described herein. The first error signal can be associated with a first blanking interval 511. In order to process a region of the substrate that has not been treated by the arc, the change in the skew signal 521 supplied to the charged particle device can move the charged particle beam. Over time 540, the skew signal supplied to the charged particle device can gradually return to normal.

The second portion of graph 500 represents the movement of charged particles over time in the case of a double arc. For example, the first error signal 501 and the second error signal 502 representing the first arc and the second arc, respectively, can be detected by the charged particle device described herein. The first signal 501 can be associated with the first blanking interval 511, and the second signal 502 can be associated with the second blanking interval 512, respectively. In order to process the first region of the substrate that has not been processed by the first arc, a first change in the intensity of the skew signal 521 supplied to the charged particle device can move the charged particle beam. Over time 540, the intensity of the skew signal supplied to the charged particle device can gradually return to normal. In order to process the second region of the substrate that has not been processed due to the second arc, a second change in the intensity of the skew signal 522 supplied to the charged particle device is selectively applied to the first deflection of the charged particle device. The intensity of the signal signal has returned to normal before moving the charged particle beam. Over time 540, the intensity of the skew signal supplied to the charged particle device can gradually return to normal.

For example, in the embodiments described herein, the first change in the intensity of the skew signal 521 supplied to the charged particle device can be, for example, a voltage or current supplied to the charged particle beam device from a normal value to a first value. increase. Over time 450, the voltage or current supplied to the beam deflection device of the charged particle beam device can gradually return from the first value to the normal value (i.e., the voltage or current can be reduced). A second change in the intensity of the skew signal 522 supplied to the charged particle device may, for example, be an increase in the voltage or current supplied to the beam deflecting device of the charged particle beam device to a second value, selectively supplied to the charged particles The first value of the beam deflection device of the beam device has returned to normal before.

According to embodiments herein, the first value of the supplied skew signal may be the same as the second value of the supplied skew signal. However, in yet another embodiment herein, the first value of the supplied skew signal may be different than the second value of the supplied skew signal. In general, in the embodiments herein, the intensity of the supplied skew signal may depend on the displacement distance of the charged particle beam in the transport direction of the substrate in order to reach the unprocessed area of the substrate.

In general, according to embodiments herein, one, two, three or more error signals can be detected over time, and the charged particle beam can be moved to different substrates along the transport direction. Processing area. According to embodiments herein, the movement of the charged particle beam can occur continuously. The charged particle beam can be moved separately for each detected error signal and then returned to the starting position of the charged particle beam. According to yet another embodiment herein, the charged particle beam can be moved to process different untreated regions before returning to the position at which the charged particle beam begins. For example, the absolute value of the first skew signal for moving the charged particle beam when the first error signal is detected may be greater than the absolute value of the second skew signal for moving the charged particle beam when the second error signal is detected. The absolute value of the second skew signal for moving the charged particle beam when the second error signal is detected may be greater than the absolute value of the third skew signal for moving the charged particle beam when the third error signal is detected, And so on.

6 through 10 illustrate different embodiments of the charged particle device described herein. Figure 6 depicts a charged particle device 200 including all of the elements of the charged particle device 100 described in Figures 1 through 3. According to the embodiment illustrated in FIG. 6, the charged particle device 200 can include a beam displacement device 210. The beam displacement device can be designed as one or more air core coils. The embodiment shown in Fig. 6 includes at least one pair of air-core coils 211, 212 that are configured to oppose each other on opposite sides of the charged particle beam 115. The air core coils 211, 212 can be connected to a variable voltage source (not shown in the drawings). The charged particle device can be adapted to vary the current supplied to the air-core coils 211, 212 to produce a magnetic field of the movable charged particle beam 115.

According to the embodiment illustrated in Fig. 6, the charged particle beam 115 can be biased by the second axis 105 along the first axis 102 along which the beam is projected toward the substrate. Beneficially, the charged particle beam angle ([alpha]) 116 between the first axis 102 and the second axis 105 can vary depending on the intensity of the current applied to the air core coils 211, 212.

For example, increasing the current applied to the air-core coils 211, 212 increases the intensity produced by the magnetic field and increases the charged particle beam angle (α) 116. In general, according to embodiments herein, a larger charged particle beam angle ([alpha]) biases the charged particle beam along the transport direction 101 of the substrate 117 as compared to a smaller charged particle beam angle ([alpha]). Slant a larger distance of 150. The distance 150 at which the charged particle beam is deflected along the direction of transport of the substrate can generally be described as being located at a first point along the first axis 102 of the charged particle beam 115 projected onto the surface of the substrate and along the charged particle beam 115. The second axis 105 projects the shortest distance between the positions of the second points on the surface of the substrate 117.

Reducing the current applied to the air-core coils 211, 212 reduces the strength of the magnetic field and reduces the charged particle beam angle (α) 116. According to embodiments herein, the current applied to the air-core coils 211, 212 can typically increase rapidly to allow the charged particle beam 115 to move advantageously along the transport direction 101 of the substrate 117 in a rapid, jump-like manner. The current applied to the air-core coils 211, 212 typically decreases gradually to allow the charged particle beam 115 to return more slowly to the starting position of the charged particle beam projected along the first axis 102.

Figure 7 depicts a charged particle device 201 comprising all of the elements of the charged particle device 100 described in relation to Figures 1 through 3. According to the embodiment shown in Fig. 7, the charged particle device 201 can include a beam displacement device 220. The beam displacement device can be designed as one or more electrodes. The embodiment illustrated in FIG. 7 includes at least one pair of electrodes 221, 222 that are configured to face each other on opposite sides of the charged particle beam 115. The electrodes 221, 222 can be connected to a variable voltage source (not shown). The charged particle device can be adapted to vary the voltage supplied to the electrodes 221, 222 to create an electrostatic field of the movable charged particle beam 115. Since the electrostatic field can be switched faster than the magnetic field, an electrostatic field can be advantageous.

According to the embodiment illustrated in FIG. 7, the charged particle beam 115 can be deflected to the second axis 105 by the first axis 102 along which the beam is projected toward the substrate 117. The charged particle beam angle (α) 116 between the first axis 102 and the second axis 105 may vary with the voltage intensity applied to the electrodes 221, 222.

Similar to the embodiment shown in Fig. 6, increasing the voltage applied to the electrodes 221, 222 increases the intensity generated by the electrostatic field and increases the charged particle beam angle (α) 116. In general, according to embodiments herein, a larger charged particle angle ([alpha]) deflects the charged particle beam along the transport direction 101 of the substrate 117 as compared to a smaller charged particle beam angle ([alpha]). The larger distance is 150. The distance 150 at which the charged particle beam is deflected along the direction of transport of the substrate can generally be described as being located at a first point along the first axis 102 of the charged particle beam 115 projected onto the surface of the substrate 117 and along the charged particle beam 115. The second axis 105 projects the shortest distance between the positions of the second points on the surface of the substrate 117.

Reducing the voltage applied to the electrodes 221, 222 reduces the intensity of the electrostatic field and reduces the charged particle beam angle (α) 116. According to embodiments herein, the voltage applied to the electrodes 221, 222 can typically increase rapidly to allow the charged particle beam 115 to move similarly in a jump direction along the transport direction 101 of the substrate 117. The voltage applied to the electrodes 221, 222 typically decreases gradually to allow the charged particle beam 115 to return more slowly to the starting position of the charged particle beam projected along the first axis 102.

Figure 8 depicts a charged particle device 202 including all of the elements of the charged particle device 100 described with respect to Figures 1 through 3. According to the embodiment illustrated in FIG. 8, the charged particle device 202 can include a beam displacement device 230. The beam displacement device can be designed as one or more permanent magnets. The embodiment shown in Fig. 8 includes at least one pair of permanent magnets 231, 232 that are configured to face each other on opposite sides of the charged particle beam 115. The embodiment of Figure 8 is particularly advantageous since the permanent magnet can perform functions without being connected to a variable voltage source. This simplifies the charged particle device and reduces the cost of ownership of the whole.

According to the embodiment illustrated in FIG. 8, the charged particle beam 115 can be deflected to the second axis 105 by the first axis 102 along which the beam is projected toward the substrate 117. Beneficially, the charged particle beam angle ([alpha]) 116 between the first axis 102 and the second axis 105 can vary with the intensity of the voltage applied to the cathode 110 of the charged particle device 202.

For example, reducing the voltage applied to the cathode 110 can increase the deflection effect of the magnetic fields of the permanent magnets 231, 232 on the charged particle beam 115, and can increase the charged particle beam angle (α) 116. In general, according to embodiments herein, a larger charged particle angle ([alpha]) deflects the charged particle beam along the transport direction 101 of the substrate 117 as compared to a smaller charged particle beam angle ([alpha]). The larger distance is 150. The distance 150 at which the charged particle beam is deflected along the direction of transport of the substrate can generally be described as being located at a first point along the first axis 102 of the charged particle beam 115 projected onto the surface of the substrate 117 and along the charged particle beam 115. The second axis 105 projects the shortest distance between the positions of the second points on the surface of the substrate 117.

Increasing the voltage applied to the cathode 110 reduces the degree of skew caused by the magnetic fields of the permanent magnets 231, 232, and reduces the charged particle beam angle (α) 116. According to embodiments herein, the voltage applied to the cathode 110 can typically be rapidly reduced to allow the charged particle beam 115 to move rapidly, like a jump, along the transport direction 101 of the substrate 117. The voltage applied to the cathode 110 typically increases gradually to allow the charged particle beam 115 to return more slowly to the starting position of the charged particle beam projected along the first axis 102.

Figure 9 depicts a charged particle device 203 comprising all of the elements of the charged particle device 100 described in relation to Figures 1 through 3. According to the embodiment shown in Fig. 9, the charged particle device 203 can include a beam displacement device 240. The beam displacement device 240 can be designed in a moving configuration for rotating and/or moving the source from the first source position to the second source position (as indicated by the dashed line in Figure 9). The moving configuration can include a mechanical system for moving the source from the at least one first position to the second position to change the charged particle beam angle ([alpha]) 116.

According to the embodiment illustrated in FIG. 9, in the first position of the source, the charged particle beam 115 can be projected along the first axis 102 toward the substrate 117. In the second position of the source, the charged particle beam 115 can be projected along the second axis 105 toward the substrate 117. Both the first shaft 102 and the second shaft 105 can be linearly projected onto the substrate 117 by the cathode 110 of the charged particle device 206. According to this embodiment, the first axis 102 and the second axis 105 can be described as a first beam trajectory and a second trajectory that are different from each other.

According to this embodiment, the charged particle beam 115 projected along the second axis 105 is from downstream of the charged particle beam 115 projected along the first axis 102 along the transport direction 101 of the substrate 117.

The embodiment of the charged particle device 203 shown in FIG. 9 can be combined with any of the mobile devices 210, 220, 230 shown in FIGS. 6 to 8 to produce an embodiment of more beneficial charged particle devices, which can be provided A larger range of motion or distance along the direction of transport of the substrate is used to move the charged particle beam 115.

Figure 10 is a perspective view of a charged particle device in accordance with Figure 6 of the embodiments described herein. In general, the dimensions of the following charged particle device 200 can be applied to any of the charged particle devices 201, 202, 203 described herein.

In particular, FIG. 10 depicts an extension of the charged particle device 200. According to this embodiment, the charged particle device 200 can extend in the length direction 160, for example to cover at least 1/10 of the width of the substrate. Similarly, the slit opening 114 can also cover at least 1/10 of the width of the substrate and/or can extend across the longitudinal extent of the charged particle device 200. According to a further embodiment, at least the charged particle beam can be sized to cover at least 1/10 of the width of the substrate.

In general, in this embodiment, the linear charged particle beam 115 and the beam displacement device 210, which are represented by one or more air-core coils 211, 212 (see also FIG. 6), may be at the length of the charged particle device 200. The direction 160 extends to cover the width of the substrate.

According to this embodiment, the longitudinal extension 161 of the linear charged particle beam 115 can vary. For example, the longitudinal extension 161 of the charged particle beam 115 can be adapted to the width of the substrate and/or the width of the processing region on the substrate that moves in the direction of transport.

11 is a schematic diagram of a system for controlling a power source in accordance with embodiments described herein. System 700 includes a charged particle device 202 having a cathode 110 and an anode provided by a housing 112 having a slit opening 114 provided in front of the charged particle device 202. In accordance with this embodiment, system 700 for processing a substrate can include any one or more of the charged particle devices 200, 201, 202, 203 described herein (see, for example, Figures 6-9).

A high voltage can be provided to the cathode 110 by the electrical connector 120. The housing can be grounded to provide an anode to ground potential. A gas similar to an inert gas (e.g., argon, nitrogen, oxygen, a mixture thereof, or the like) may be supplied from the gas tank 70 through the gas conduit 70 through one or more valves 72 to the outer casing 112 for generating plasma. in. In general, according to some embodiments described herein, one or more components of a gas conduit, valve, gas reservoir, and the like can be used in a gas supply for supplying a gas similar to an inert gas (eg, argon) Gas, nitrogen, oxygen, a mixture thereof or the like) is introduced into the outer casing of the charged particle device. According to yet another embodiment that may be produced in conjunction with other embodiments, at least 2 gas supplies or even at least 7 gas supplies may be provided. The two or more gas supplies may typically share elements like a gas tank, a gas conduit from the tank to the gas distributor, and/or a valve.

One or more valves 72 may be controlled by controller 90 as indicated by arrow 74. According to some embodiments, which may be combined with other embodiments described herein, one or more valves 72 may be controlled using a reaction time ranging from 1 to 10 milliseconds. For example, in the case of an arc occurring between the cathode and the anode, a beneficial rapid reaction can be achieved.

In general, the current and electron beam intensity can be controlled by the amount of gas provided in the plasma zone. The current supplied to the linear electron source can be proportional to the current supplied by the electron emission. For example, if the current should be reduced, one or more valves 72 can be controlled such that the amount of gas in the plasma zone increases.

The high voltage for cathode 110 can be provided by power source 80. According to some embodiments, controller 90 measures the current supplied to the cathode by constant voltage source 80. This is illustrated by arrow 95 in Figure 11. Again, as indicated by arrow 82, the voltage source (i.e., power source 80) can include a detection device, such as a sensor. According to this embodiment, the detecting means can for example be an arc control. If an arc occurs between the cathode and the anode, the current may increase rapidly and can be detected by the arcing rejection mean of the power source. According to some embodiments, which may be combined with other embodiments described herein, the voltage source may be adapted to be turned off and on within a range of one millisecond (e.g., 1 msec to 10 msec). In general, the reaction time can depend on the rate at which the substrate moves along the electron source. Thus, for substrates that move relatively quickly, the reaction time can be even faster, or the reaction time can be slow if the substrate is not moving or moving only slowly. If an arc occurs, the power source 80 can be turned off immediately and turned on again immediately after the arc disappears. On the other hand, this allows stable operation of the linear power supply. On the other hand, this operation can be quasi-continuous. Linear electron sources are particularly relevant for applications where the target is a fast moving flexible substrate, foil, and the like.

As described above, according to embodiments herein, the charged particle device described herein can be adapted to turn the power off or on in a range of one millisecond when an arc or short circuit is detected. Surprisingly, the result is that a short circuit or arc can undesirably interrupt the charged particle beam. In general, the required and/or unwanted interruption of the charged particle beam can cause an area on the substrate that moves in the direction of transport to be excluded and not processed.

Advantageously, according to embodiments herein, the charged particle device 202 can be adapted to move the charged particle beam 115 from the first position along at least the moving substrate 117 when a short circuit is detected and/or when the charged particle beam is interrupted. Direction, move to at least a second position. Movement of the charged particle beam 115 can include changing the path of the charged particle beam from the first path or the first beam trajectory to at least one second path or second beam trajectory along at least the transport direction 101 of the moving substrate 117. For example, the charged particle beam 115 can be deflected by the first axis 102 along which the beam is projected toward the substrate to the second axis 105. Beneficially, the charged particle beam angle ([alpha]) 116 between the first axis 102 and the second axis 105 can vary depending on the voltage strength applied to the cathode 110 of the charged particle device 202.

In particular, when a short circuit is detected, the charged particle beam 115 can be abruptly moved (here also referred to as "jumping") along the transport direction 101 of the substrate 117 to the unprocessed area on the substrate 117. The rate at which the charged particle beam 115 moves in the transport direction 101 can generally be greater than the rate at which the substrate 117 moves in the transport direction 101.

According to this embodiment, the controller 90 can be adapted to reduce the voltage applied to the cathode 110 by the variable power source 80, for example, when an arc or short circuit is detected. This situation is illustrated by arrow 96 in Figure 11. Reducing the accelerating voltage of the charged particle device 202 increases the deflection effect of the magnetic fields of the permanent magnets 231, 232 on the charged particle beam, and increases the charged particle beam angle (α) 116. In general, according to this embodiment, the larger charged particle beam angle ([alpha]) deflects the charged particle beam a greater distance along the transport direction 101 of the substrate 117 than a smaller charged particle beam angle. 150. Similar to the above-described Fig. 8, the distance 150 which is deflected along the transport direction of the substrate along which the charged particle beam is directed can generally be described as being projected on the surface of the substrate 117 along the first axis 102 of the charged particle beam 115. The first point is the shortest distance between the position of the second point on the surface of the substrate 117 along the second axis 105 of the charged particle beam 115.

Further, the controller can be adapted to gradually increase the acceleration voltage of the charged particle device 202, reduce the deflection effect of the magnetic fields of the permanent magnets 231, 232, and reduce the charged particle beam angle (α) 116. According to an embodiment, the voltage applied to the cathode 110 is typically rapidly reduced to allow the charged particle beam 115 to move rapidly, like a jump, in the direction of transport of the substrate 117. The voltage applied to the cathode 110 typically decreases gradually to allow the charged particle beam 115 to return more slowly to the starting position of the charged particle beam 115 projected along the first axis 102.

According to yet another embodiment, the controller may generally be adapted to be associated with a signal having a position of the charged particle beam on the substrate that is interrupted (e.g., arced or shorted). The controller may be further adapted to trigger movement (selectively a temporary movement) of the charged particle beam in the transport direction to a location where the charged particle beam on the substrate is interrupted. According to this embodiment, the controller can be coupled to a variable power source, such as a beam shifting device, to move the charged particle beam in the transport direction.

According to this embodiment, the main control unit 92 can have a display device 91 and an input device 93 (such as a keyboard, mouse, touch screen, or the like) that can provide predetermined values of current and voltage. This predetermined current (i.e., electron beam intensity) can be provided to controller 90 as indicated by arrow 94. Controller 90 may, for example, measure the current current and adjust the airflow if the current current is different than the predetermined current. Main control unit 92 provides a predetermined value of voltage to variable power supply 80, as indicated by arrow 84 in FIG. The voltage provided between the cathode and the anode can be used to affect the energy of the emitted electrons. During normal operation of system 700, power supply 80 can set cathode 110 to a fixed potential in the range of -3 to -30 kV, typically -5 to -10 kV, such as -10 kV. Since the anode is grounded, a certain voltage can be applied between the cathode and the anode.

Figure 12 is a schematic illustration of a charged particle source in accordance with embodiments described herein. Without being limited to any particular embodiment described herein, the charged particle source described with respect to Figures 12, 13 and 14 can be used in any of the embodiments described herein. In particular, Figure 12 illustrates a typical cross-sectional view of a portion of a charged particle source 300 for processing a substrate along a direction perpendicular to the longitudinal axis of the charged particle device. The longitudinal axis direction of the charged particle device can be defined as the direction of entering and leaving the page. According to some embodiments herein, the charged particle device can be adapted to increase the extraction efficiency of charged particles projected by the charged particle source toward the substrate with the charged particle beam. Increasing the extraction efficiency can result in the ability to provide a larger distance between the substrate and the charged particle device. Conversely, this allows the positioning of the beam deflection device to be improved.

According to embodiments herein, charged particle source 300 can include a housing 310. The outer casing 310 can provide a first electrode. According to embodiments herein, the first electrode can be an anode and the anode can be selectively grounded. The outer casing 310 can have a rear wall 312 and a front wall 314. The front wall 314 and the rear wall 312 of the outer casing 310 may be connected to each other by the first side wall 311 and the second side wall 313. According to embodiments herein, the first sidewall 311 and the second sidewall 313 may be disposed in parallel with each other.

In the embodiments described herein, the front wall 314 of the outer casing 310 can include a take-up aperture (hereinafter may be referred to as a slit opening 316). The slit opening 316 can be adapted for trespassing of a charged particle beam. According to embodiments herein, the slit opening 316 can divide the front wall 314 of the outer casing 310 into a first front wall portion 315 and a second front wall portion 317. The first front wall portion 315 and the second front wall portion 317 may be symmetrical about the line of symmetry 301. The line of symmetry 301 is defined as a plane that divides the charged particle source 300 into the same half. The line of symmetry 301 can be perpendicular to the rear wall 312 of the outer casing 310 of the charged particle source 300. The slit opening 316 can define one of the length directions of the charged particle source 300. In the exemplary embodiment illustrated in Figure 12, the length direction of the charged particle source 300 can be described as entering or exiting the page.

According to embodiments herein, the front wall 314 of the outer casing 310 includes a first front wall portion 315 and/or a second front wall portion 317. The first front wall portion 315 and the second front wall portion 317 may be configured to face the second electrode 320. For example, the first front wall portion 315 and the second front wall portion 317 may be inclined toward the second electrode 320. In general, according to embodiments herein, during operation of the charged particle source 300, plasma may be formed in the outer casing 310 in the space 302 between the second electrode 320 and the front wall 314 of the outer casing 310. Again, according to embodiments herein, end walls (not shown) may cover both ends of the outer shell of charged particle source 300. Still further, according to embodiments described herein, the charged particle source 300 can include at least one connector selected from the group consisting of: a connector for a power source, a connector for a gas, and A connection for cooling fluid.

According to this embodiment, the second electrode 320 has at least a first side 322. The first side 322 faces the slit opening 316 of the outer casing 310 (ie, the first side of the second electrode can also be represented as the front side of the second electrode). In the embodiment described herein, the first side 322 can be curved. The curvature of the first side 322 can increase the extraction efficiency of the charged particle source 300. For example, the first side may be curved away from the slit opening 316 and represented as a concave first side that may increase the surface area of the second electrode 320 to assist in concentrating the charged particle beam emitted by the second electrode toward the slit opening 316. The second electrode 320 can also have a second side 324 facing the rear wall 312 of the outer casing 310 (ie, the second side of the second electrode can also be represented as the rear side of the second electrode).

According to this embodiment, the second electrode 320 can have one or more beam forming extensions 325, 329. One or more beam forming extensions 325, 329 may be protruded by the second electrode 320 in a direction toward the front wall 314 of the outer casing 310. In general, one or more beam forming extensions may extend in a direction parallel to the longitudinal direction of the second electrode 320. Rather than being limited to any particular embodiment described herein, the second electrode can comprise a single beam forming extension, 2 beam forming extensions, or a plurality of beam forming extensions.

In accordance with this embodiment, one or more beam shaping extensions 325, 329 can be configured to direct the charged particle beam emitted by the second electrode 320 through the slit opening 316 to further increase the extraction efficiency of the charged particle source 300. In particular, it may be suitable for one or more beam forming extensions such that during operation, electric field lines formed between one or more beam forming extensions 325, 329 and the outer shell of charged particle source 300 are directed by the plasma The electrons generated by the interaction of the ions and the second electrode are directed toward the slit opening 316. Figure 12 depicts an exemplary trajectory of a charged particle beam comprising a Coulomb repulsion of electrons formed by space charge (see reference to symbol 305).

In this embodiment, the second electrode 320 of the charged particle source 300 can include a first beam forming extension 325 and a second beam forming extension 329. The first beam forming extension 325 and the second beam forming extension 329 can be configured on opposite sides of the second electrode 320. In embodiments herein, the first beam forming extension and/or the second beam forming extension may be integrally formed with the second electrode. In yet another embodiment described herein, the first beam forming extension and/or the second beam forming extension can be fabricated separately and coupled to the second electrode during assembly of the second electrode.

In accordance with this embodiment, one or more of the beam forming extensions 325, 329 can have at least a first side 328, 332 that can be configured to abut the first side 322 of the second electrode 320. In the embodiment described herein, the first sides 328, 332 of the one or more beam forming extensions 325, 329 can be curved. In accordance with embodiments described herein, one or more of the beam forming extensions 325, 329 can individually have a second side 326, 330. The second sides 326, 330 of the one or more beam forming extensions 325, 329 can be configured to individually face the first side wall 311 and the second side wall 313 of the outer casing 310. In the embodiment described herein, the second sides 326, 330 of the one or more beam forming extensions 325, 329 can be configured to be parallel to at least one of the first side wall 311 and the second side wall 313 of the outer casing 310.

Again, in accordance with this embodiment, one or more of the beam forming extensions 325, 329 can have front sides 327, 331 that face the front wall 314 of the outer casing 310. For example, the front side 327 of the first beam forming extension 325 can face the direction toward the first front wall portion 315 of the outer casing 310. The front side 331 of the second bundle forming extension 329 may face the direction toward the second front wall portion 317 of the outer casing 310. In the embodiments described herein, an edge that may be formed between one or more of the front sides 327, 331 and one or more second sides 326, 330 may be supported during operation of the charged particle source 300 (support ) Ignition of the plasma. Also, one or more of the front sides 327, 331 may be parallel to the second side 324 of the second electrode 320.

In general, one or more of the beam forming extensions 325, 329 of the second electrode can be configured to be spaced apart from the first side wall 311 and the second side wall 313 of the outer casing 310, respectively. Dark spaces may be formed between the one or more second sides 326, 330 of one or more beam forming extensions 325, 329 and the first side wall 311 and/or the second side wall 313 of the outer casing 310, respectively. In this embodiment, the second electrode 320 may also be spaced apart from the rear wall 312 of the outer casing 310 such that a dark region is formed in the space between the second side 324 of the second electrode 320 and the rear wall 312 of the outer casing 310.

According to this embodiment, the charged particle source 300 can include a cooling system. The cooling system is used to cool the outer casing 310, which further improves the energy efficiency of the charged particle source 300. For example, a cooling system 350 that includes at least one passage to contain a fluid can be configured to cool the rear wall 312 of the outer casing 310. According to this embodiment, the cooling system can be integrally formed with the outer casing 310. According to yet another embodiment, the cooling system can be formed, for example, at least partially within the rear wall 312 of the outer casing 310.

Figure 13 is a schematic cross-sectional view showing a portion of a charged particle source 400 for processing a substrate along a direction perpendicular to the longitudinal axis of the charged particle device. The direction of the longitudinal axis of the charged particle source can be defined as the direction of entering and leaving the page.

According to this embodiment, the charged particle source 400 has an arrangement similar to the charged particle source 300 shown in FIG. All of the features of Fig. 12 (in addition to the differences described below) are also applied to the embodiments shown in Figs. 13 and 14.

Regarding FIG. 13, according to this embodiment, the second electrode 420 can have one or more beam forming extensions 425, 429. One or more beam forming extensions 425, 429 may protrude from the second electrode 420 toward the front wall 414 of the outer casing 410. In general, one or more beam forming extensions may extend in a direction parallel to the longitudinal axis of the second electrode 420.

Similar to the one or more beam shaping extensions described with respect to FIG. 12, one or more of the beam shaping extensions illustrated in FIG. 13 can be configured to direct the charged particle beam emitted by the second electrode 420 through the slit opening 416. To increase the extraction efficiency of the charged particle source 400. In particular, one or more beam forming extensions may be suitable such that during operation, electric field lines formed between one or more beam forming extensions 425, 429 and the outer casing 410 of the charged particle source 400 are directed by the plasma The electrons generated by the interaction of the ions and the second electrode 420 open toward the slit. Figure 13 depicts an exemplary trajectory of a charged particle beam comprising a Coulomb repulsion of electrons formed by space charge (see reference to symbol 405).

In this embodiment, the second electrode 420 of the charged particle source 400 can include a first beam forming extension 425 and a second beam forming extension 429. The first beam forming extension 425 and the second beam forming extension 429 can be configured on opposite sides of the second electrode 420. According to this embodiment, the first beam shaping extension 425 and the second beam shaping extension 429 can be integrally formed with the second electrode 420. In yet another embodiment described herein, the first beam forming extension 425 and the second beam forming extension 429 can be fabricated separately and coupled to the second electrode 420 during assembly of the second electrode 420.

In accordance with this embodiment, the one or more beam forming extensions 425, 429 can have at least a first side 428, 432 that can be configured to abut the first side 422 of the second electrode 420. In the embodiment described herein, the first sides 428, 432 of the one or more beam forming extensions 425, 429 can be curved. In accordance with embodiments described herein, one or more of the beam forming extensions 425, 429 may individually have second sides 426, 430. The second sides 426, 430 of the one or more beam forming extensions 425, 429 can be configured to individually face the first side wall 411 and the second side wall 413 of the outer casing 410. In the embodiment described herein, the second side 426, 430 of the one or more beam forming extensions 425, 429 can be configured to be parallel to at least one of the first side wall 411 and the second side wall 413 of the outer casing 410.

In the embodiments described herein, the first side 428 of the first beam forming extension 425 can be, for example, inclined to at least one of the first side wall 411 and the second side wall 413 of the outer casing 410. For example, an acute angle (α') formed between a line extending parallel to the first side 428 of the first beam forming extension 425 and a line extending parallel to the first side wall 411 of the outer casing 410 may be from 5° to 85°. For example, 35°, 45° or 55°. Alternatively, the slope of the first side 428 of the first beam forming extension 425 can be defined as the slope with respect to the longitudinal axis 407 of the charged particle beam. For example, an acute angle ([alpha]') formed between a line parallel to the first side 428 of the first beam forming extension 425 and the longitudinal axis 407 of the charged particle beam can be from 5[deg.] to 85[deg.], such as 35[deg.], 45[deg.]. Or 55°. According to this embodiment, similarly, the first side 432 of the second beam forming extension 429 can be, for example, inclined to at least one of the first side wall 411 and the second side wall 413 of the outer casing 410. For example, an acute angle (α''') formed between a line extending parallel to the first side 432 of the second beam forming extension 429 and a line extending parallel to the second side wall 413 of the outer casing 410 may be 5° to 85°, For example, 35°, 45° or 55°. Alternatively, the slope of the first side 432 of the second beam forming extension 429 can be defined as the slope with respect to the longitudinal axis 407 of the charged particle beam. For example, an acute angle (α''') formed between a line parallel to the first side 432 of the second beam forming extension 429 and the longitudinal axis 407 of the charged particle beam may be from 5° to 85°, for example 35°, 45° or 55°.

Again, in this embodiment, the first side 428 and the second side 426 of the first beam forming extension 425 can abut each other. The first side 428 and the second side 426 can form an edge at the joints of the first and second sides. Similarly, the first side 432 and the second side 430 of the second beam forming extension 429 can abut each other. The first side 432 and the second side 430 can form an edge at the joints of the first and second sides. An edge formed between the first side 428 and the second side 426 of the first beam forming extension 425 and a curvature formed at an edge between the first side 432 and the second side 430 of the second beam forming extension 429 The small outer diameter (radius) supports ignition of the plasma during operation of the charged particle source 400.

For a better description of the embodiments described herein, FIG. 14 depicts the same portion of charged particle source 300 shown in FIG. In general, Fig. 14 shows the embodiment shown in Fig. 12. However, the dimensions of the features and their relationship to each other are also applicable to other embodiments described herein. In particular, for example, the embodiment shown in Fig. 13. Again, the geometry of the charged particle source shown in the drawings, particularly the cross-sectional views shown, for example, in Figures 12 and 13, illustrate an example of a charged particle source in accordance with embodiments herein. The particular geometry shown in the drawings is not intended to limit the scope of the disclosure in any form. More different geometries suitable for charged particle sources are within the scope of the present disclosure.

In general, charged particle source 300 can have a width 604 greater than 30 mm, such as from 30 to 80 mm, such as 50 mm. The charged particle source 300 can have a height 601 greater than 70 mm, such as from 70 to 130 mm, such as 100 mm. Again, the second electrode 320 can have a height 602 greater than 30 mm, such as from 30 to 50 mm, such as 40 mm. Furthermore, the height 603 of the slit opening 316 can be greater than 2 mm, for example from 2 mm to 10 mm, for example 6 mm.

Figure 14 further illustrates a parallel projection 609 of the charged particle source 300 on the projection plane 610. The function of the projection plane can be used as a coordinate system in a one-dimensional space. The rear wall 312 of the outer casing 310 can be, for example, defined as a length 611 along the projection plane 610. By way of this embodiment, the length 611 can be greater than 3 mm, for example from 3 mm to 30 mm, for example 10 mm. In general, according to this embodiment, the dark region separates the rear wall 312 of the outer casing 310 from the second electrode 320. The dark region may have a width defined by a length 612 along the plane of the projection. The length 612 can be greater than 2 mm, for example from 2 mm to 10 mm, for example 5 mm. The second electrode 320 can have a width defined by a length 613 along the projection plane. The length 613 can be greater than 5 mm, for example from 5 mm to 30 mm, for example 10 mm. One or more beam forming extensions 325, 329 may protrude from the second electrode 320 by a length 614 in a direction toward the front wall, particularly toward the first front wall portion 315 and/or the second front wall portion 317 of the outer casing 310. The length 614 can be greater than 2 mm, for example from 2 mm to 20 mm, for example 5 mm. Without being limited to any particular embodiment herein, each beam forming extension may be protruded by the second electrode by a different length 614 in a direction toward the front wall of the housing.

Again, according to embodiments herein, the shortest distance between the first beam forming extension 325 and/or the second beam forming extension 329 and the front wall portion of the outer casing 310 may be defined as length 615. According to embodiments herein, the length 615 can be greater than 10 mm, such as from 10 mm to 60 mm, such as 30 mm. In the embodiments described herein, the front wall of the outer casing 310 may be greater than 0 mm along the length 616 of the projection plane 609 between the farthest point of the one or more beam forming extensions 325, 329 and the closest point, for example, regardless of It is 0 mm to 30 mm, for example 15 mm.

In general, the embodiments shown in Figures 12, 13 and 14 increase the extraction efficiency of the charged particle source and increase the density of charged particles delivered by the charged particle source to the substrate to be processed. The increased density of charged particles allows for a greater distance between the source of charged particles and the substrate to be processed. This is for example a configuration that facilitates the beam displacement device. Moreover, a large distance between the charged particle source and the substrate can also promote the movement of the charged particle beam. Thus, in order to benefit from increased extraction efficiency, the embodiments described with respect to Figures 1 through 11 may also be provided in conjunction with the charged particle beam apparatus bundled herein.

According to embodiments herein, the greater distance between the charged particle source and the substrate reduces the energy required to move the charged particle beam. In particular, the beam displacement device can deflect the charged particle beam closer to the source. By deflecting the charged particle beam closer to the source by the beam displacement device, the magnitude of the deflection of the charged particle beam can be made relatively high in the substrate hierarchy with a relatively small initial deflection. This may, for example, allow the charged particle beam to have a greater degree of overall mobility at the substrate level, with the beam displacement device having a lower energy loss.

Figure 15 is a schematic illustration of a method 1200 for processing a moving substrate in accordance with embodiments described herein. The method generally includes a step 1210 of moving the substrate along the transport direction and a step 1220 of processing the substrate using the charged particle beam. The method further includes the step 1230 of detecting an error signal. Moreover, the method includes the step 1240 of moving the charged particle beam from the first beam trajectory to the second beam trajectory along the transport direction of the substrate when an error signal is detected. According to embodiments herein, a charged particle beam apparatus and a method for processing a moving substrate using a charged particle device provide an advantage that even during the interruption of the charged particle beam, the resulting substrate does not include an untreated area, and for example, presents more It is a homogenous polymer layer.

According to embodiments described herein, the step 1240 of moving the charged particle beam can include moving the charged particle beam from the first beam trajectory to the second beam trajectory along the transport direction of the substrate. The movement of the charged particle beam can also be described as a change in the angle of the charged particle beam from a first value to a second value. In general, according to embodiments herein, moving the charged particle beam includes changing the trajectory of the charged particle beam and the angle of the charged particle beam.

In the embodiments described herein, moving a charged particle beam generally occurs when the substrate is moved in the transport direction. Moreover, detecting the error signal can optionally include detecting an error signal indicative of an interruption of the charged particle beam. For example, an error signal can indicate a short circuit, an electric arc, or the like.

According to embodiments herein, moving the charged particle beam at least along the transport direction comprises moving the charged particle beam to a first region where the charged particle beam is interrupted on the substrate.

Moving the charged particle beam at least along the transport direction may further comprise at least one element selected from the group consisting of applying a magnetic field to the charged particle beam, applying an electrostatic field to the charged particle beam, changing the acceleration voltage of the charged particle beam, and The source of charged particles forming a charged particle beam is moved or rotated from a first source location to a second source location.

According to embodiments herein, the method 1200 for processing a substrate may further include the step 1250 of causing the charged particle beam to return from the second beam trajectory to the first beam trajectory after the first predetermined period. In general, the length of the first predetermined period may depend on at least one element selected from the list below: the speed of movement of the substrate, the time during the interruption, and the intensity of the charged particle beam.

According to a further embodiment, the total period for moving the charged particle beam from the first beam trajectory to the second beam trajectory may be less than the total period of time for bringing the charged particle beam back from the second beam trajectory back to the first beam trajectory.

In the embodiments described herein, the processing method for the substrate can further include the step 1260 of moving the charged particle beam to the third beam trajectory. The method selectively includes moving the charged particle beam to charged particles on the substrate before the charged particle beam returns from the second beam trajectory back to the first beam trajectory or while the charged particle beam is returned from the second beam trajectory back to the first beam trajectory The second zone where the bundle is interrupted.

In yet another embodiment, a method for processing a substrate can further include moving the charged particle beam to the fourth, fifth, and sixth beam trajectories. The method selectively includes moving the charged particle beam to a third, fourth, and fifth region on the substrate where the charged particle beam is interrupted. Moving the charged particle beam to the third, fourth, and fifth regions on the substrate can occur, for example, prior to returning the charged particle beam from any previous beam trajectory back to the first beam trajectory, or by causing the charged particle beam to be The period during which the previous beam trajectory returns to the first beam trajectory. In general, moving the charged particle beam from the first beam trajectory to the nth beam trajectory includes moving the charged particle beam to an n+1 region where the charged particle beam on the substrate is interrupted.

Further in accordance with embodiments herein, the charged particle beam can be moved in the transport direction only when the detected error signal exceeds a predetermined threshold.

In still another embodiment herein, a method for processing a substrate can include moving the substrate along a transport direction and using a charged particle beam handler plate. The method can further include detecting the error signal and, when the error signal is detected, moving the charged particle beam from the first beam trajectory to the second beam trajectory in a direction opposite to the substrate transport direction. In particular, the embodiments of the above-described sixth to fourteenth embodiments are applied to move the charged particle beam in both the transport direction and the transport direction when an error signal is detected.

Although specific features of different embodiments may be shown in some drawings and not in other figures, this is only a matter of convenience. Any feature in the drawings may be referenced and/or claimed to be in any feature of any other drawing.

The description uses the examples to disclose the disclosure, including the best mode, and also to enable those skilled in the art to practice the subject matter, including making and using any device or system and performing any combination. Although various specific embodiments have been disclosed above, it will be understood by those of ordinary skill in the art that In particular, the non-exclusive features of the above embodiments may be combined with each other. The scope of patentability is defined by the scope of the patent application and may include other such refinements and other examples that occur to those of ordinary skill in the art. If the structural elements of such other examples are not different from the language of the patent application, or include structural elements that are not substantially equivalent to the language of the patent application, such other examples are intended to be within the scope of the present application. In the category.

70‧‧‧ gas trough
72‧‧‧ Valve
74, 82, 84, 94, 95, 96, 103, 104, 123, 125‧‧‧ arrows
80‧‧‧Power supply
90‧‧‧ Controller
91‧‧‧Display device
92‧‧‧Main control unit
93‧‧‧Input device
100, 200, 201, 202, 203‧‧‧ charged particle devices
101‧‧‧ moving direction
102‧‧‧first axis
105‧‧‧second axis
106‧‧‧First position
107‧‧‧second position
110‧‧‧ cathode
111‧‧‧ recess
112‧‧‧Shell
113‧‧‧ front
114‧‧‧ openings
115‧‧‧Charged particle beam
116, α‧‧‧ angle
117‧‧‧Substrate
118‧‧‧Untreated area
120‧‧‧Electrical connectors
122‧‧‧Cathode support
124‧‧‧Cathode support components
130‧‧‧ gas conduit
150‧‧‧ distance
160‧‧‧ Length direction
161‧‧‧ longitudinal extension
210, 220, 230, 240‧‧ ‧ beam displacement device
211, 212‧‧‧ air-core coil
221, 222‧‧‧ electrodes
231, 232‧‧‧ permanent magnets
300, 400‧‧‧ charged particle source
301‧‧ symmetry line
302‧‧‧ Space
305, 405‧‧ ‧ tracks
310, 410‧‧‧ shell
311, 411‧‧‧ first side wall
312‧‧‧ Back wall
313, 413‧‧‧ second side wall
314, 414‧‧‧ front wall
315‧‧‧First front wall section
316, 416‧‧ slit opening
317‧‧‧Second front wall section
320, 420‧‧‧ second electrode
First side of 322, 422, 428, 432‧‧
324, 326, 330, 426, 430‧‧‧ second side
325, 329, 425, 429 ‧ ‧ beam forming extension
327, 331‧‧‧ front side
328, 332‧‧‧ first side
350‧‧‧Cooling system
407‧‧‧ vertical axis
500‧‧‧ Chart
501‧‧‧ first error signal
502‧‧‧ second error signal
511‧‧‧First occlusion interval
512‧‧‧second occlusion interval
521, 522‧‧‧ skew signal
540‧‧‧Time
601, 602, 603‧‧‧ height
604‧‧‧Width
609‧‧‧Projection
610‧‧‧Projection plane
Length of 612, 613, 614, 615, 616‧‧‧
700‧‧‧ system
1200‧‧‧ method
1210, 1220, 1230, 1240, 1250, 1260‧‧‧ steps α', α", α''', α''''‧‧‧ acute angle

1 through 3 illustrate schematic views of charged particle devices for processing substrates over time in accordance with embodiments herein. 4 is a schematic diagram of a moving charged particle beam with respect to moving a substrate in accordance with embodiments described herein. FIG. 5 is a schematic diagram showing temporal characteristics of a charged particle beam being moved with respect to one or more electrical discharges and one or more detection signals in accordance with embodiments described herein. Figure 6 is a schematic illustration of a charged particle device in accordance with embodiments described herein. Figure 7 is a schematic illustration of another charged particle device in accordance with embodiments described herein. FIG. 8 is a schematic view showing still another charged particle device according to an embodiment. FIG. 9 is a schematic view showing still another charged particle device according to an embodiment. Figure 10 is a perspective view of a charged particle device in accordance with Figure 6 of the embodiments described herein. 11 is a schematic diagram of a system for controlling a power source in accordance with embodiments described herein. Figure 12 is a schematic illustration of a charged particle source in accordance with embodiments described herein. Figure 13 is a schematic illustration of a charged particle source in accordance with yet another embodiment described herein. Figure 14 is a schematic illustration of another embodiment of the charged particle source shown in Figure 1 of the embodiments described herein. Figure 15 is a schematic illustration of a method for processing a moving substrate in accordance with embodiments described herein.

100‧‧‧ charged particle device

101‧‧‧ moving direction

102‧‧‧first axis

106‧‧‧First position

110‧‧‧ cathode

111‧‧‧ recess

112‧‧‧Shell

113‧‧‧ front

114‧‧‧ openings

115‧‧‧Charged particle beam

117‧‧‧Substrate

118‧‧‧Untreated area

120‧‧‧Electrical connectors

122‧‧‧Cathode support

Claims (20)

A charged particle device for processing a movable substrate, the charged particle device comprising: a source for forming a charged particle beam to process the substrate moving along a transport direction; and a beam displacement device for The charged particle beam is moved by the first beam trajectory along the transport direction to at least one second beam trajectory. The charged particle device of claim 1, further comprising a controller coupled to the beam displacement device. The charged particle device of claim 2, further comprising a detecting device, configured to detect an error signal indicating that the charged particle beam is interrupted, wherein when the error signal is detected The controller is adapted to trigger the beam displacement device to move the charged particle beam from the first beam trajectory to the second beam trajectory in the transport direction. The charged particle device of claim 3, wherein the detecting device is a sensor configured to detect a short circuit. The charged particle device of claim 3, wherein the controller associates the error signal indicating that the charged particle beam is interrupted with a position at which the charged particle beam is interrupted on the substrate to trigger the beam Displacement means moving the charged particle beam from the first beam trajectory along the transport direction (selectively temporarily moving the charged particle beam) to the second beam trajectory, causing the charged particle beam to affect the charged particle beam at This position is interrupted on the substrate. The charged particle device of claim 1, wherein the beam displacement device comprises a configuration for generating a magnetic field and/or an electrostatic field. The charged particle device of claim 6, wherein the beam displacement device comprises at least one element selected from the group consisting of: one or more air-core coils, one or more permanent magnets, one or more electrodes, And a configuration for rotating or moving the source from a first source position to a second source position. The charged particle device of any one of the preceding claims, wherein the source further comprises: a housing providing a first electrode, the housing having a rear wall and a front wall; a slit opening in the outer casing for penetration of a charged particle beam, the slit opening defining a length direction of the charged particle device; and a second electrode disposed in the outer casing and having the slit facing a first side of the opening, wherein the second electrode includes one or more beam forming extensions, the one or more beam forming extensions projecting from the first side of the second electrode toward the front wall of the outer casing, The charged particle beam is guided through the slit opening. A method for processing a substrate in a processing system, the method comprising: moving the substrate in a transport direction; processing the substrate using a charged particle beam; detecting a first error signal; and detecting the error During the signal, the charged particle beam is moved by a first beam trajectory along the transport direction to a second beam trajectory. The method of claim 9, wherein moving the charged particle beam from a first beam trajectory along the transport direction to a second beam trajectory occurs during movement of the substrate along the transport direction. The method of claim 9, wherein detecting a first error signal comprises detecting an error signal indicating an interruption of the charged particle beam. The method of claim 9, wherein detecting a first error signal comprises detecting an error signal indicating a short circuit. The method of claim 10, wherein moving the charged particle beam to the second beam trajectory comprises moving the charged particle beam to a first region where the charged particle beam is interrupted on the substrate. The method of claim 10, wherein moving the charged particle beam to the second beam trajectory comprises at least one element selected from the group consisting of applying a magnetic field to the charged particle beam, applying an electrostatic field to The charged particle beam, the acceleration voltage of the charged particle beam is changed, and a source for forming the charged particle beam is moved or rotated from a first source position to a second source position. The method of claim 10, further comprising bringing the charged particle beam back to the first beam trajectory after a first predetermined period of time. The method of claim 15, wherein the length of the first period is dependent on at least one element selected from the group consisting of: a moving speed of the substrate, a time during which the charged particle beam is interrupted, and charged particles The strength of the bundle. The method of claim 15, wherein the total period of movement of the charged particle beam from the first beam trajectory to the second beam trajectory is less than the charging of the charged particle beam from the second beam trajectory back to the first The total period of the beam trajectory. The method of any one of clauses 10 to 17, further comprising moving the charged particle beam to a third beam trajectory when a second error signal is detected. The method of claim 18, comprising: returning the charged particle beam from the second beam trajectory back to the first beam trajectory, or returning the charged particle beam from the second beam trajectory to the During the first beam trajectory, the charged particle beam is moved to a second region where the charged particle beam is interrupted on the substrate. A charged particle device for processing a movable substrate, the charged particle device comprising: a source for forming a charged particle beam to process the substrate moving along a transport direction; a beam shifting device for Moving the charged particle beam to the at least one second beam trajectory by a first beam trajectory; a controller coupled to the beam displacing device; and a detecting device for detecting the charging An error signal is interrupted by the particle beam, wherein when the error signal is detected, the controller is adapted to trigger the beam displacement device to move the charged particle beam from the first beam trajectory to the second beam trajectory.