TW201718896A - Porous nickel thin film and manufacturing method thereof - Google Patents
Porous nickel thin film and manufacturing method thereof Download PDFInfo
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- TW201718896A TW201718896A TW105135885A TW105135885A TW201718896A TW 201718896 A TW201718896 A TW 201718896A TW 105135885 A TW105135885 A TW 105135885A TW 105135885 A TW105135885 A TW 105135885A TW 201718896 A TW201718896 A TW 201718896A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 255
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 125
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims description 128
- 238000007747 plating Methods 0.000 claims description 55
- 238000012360 testing method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 35
- 239000004094 surface-active agent Substances 0.000 claims description 28
- -1 alkyl ether sulfate Chemical class 0.000 claims description 22
- 238000006073 displacement reaction Methods 0.000 claims description 20
- 150000002815 nickel Chemical class 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000003945 anionic surfactant Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 2
- 150000003871 sulfonates Chemical class 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 13
- 239000002585 base Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000003490 calendering Methods 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000002563 ionic surfactant Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical group [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 description 1
- 229940077388 benzenesulfonate Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- NVVZQXQBYZPMLJ-UHFFFAOYSA-N formaldehyde;naphthalene-1-sulfonic acid Chemical compound O=C.C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 NVVZQXQBYZPMLJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RCMHUQGSSVZPDG-UHFFFAOYSA-N phenoxybenzene;phosphoric acid Chemical class OP(O)(O)=O.C=1C=CC=CC=1OC1=CC=CC=C1 RCMHUQGSSVZPDG-UHFFFAOYSA-N 0.000 description 1
- FURYAADUZGZUGQ-UHFFFAOYSA-N phenoxybenzene;sulfuric acid Chemical class OS(O)(=O)=O.C=1C=CC=CC=1OC1=CC=CC=C1 FURYAADUZGZUGQ-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/623—Porosity of the layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
本發明係關於多孔質鎳薄膜及其製造方法。 The present invention relates to a porous nickel film and a method of producing the same.
鎳薄膜在許多的領域之應用備受期待。例如,在日本專利第4411409號(專利文獻1),記載多孔質之鎳鍍覆膜作為氫透過金屬膜之支撐體使用。於此,鎳薄膜被要求要具有柔軟度。 Nickel films are expected to be used in many fields. For example, Japanese Patent No. 4411409 (Patent Document 1) discloses that a porous nickel plating film is used as a support for a hydrogen permeable metal film. Here, the nickel film is required to have softness.
日本專利第4411409號 Japanese Patent No. 4411409
本發明之課題係提供一種優良柔軟度之鎳薄膜及其製造方法。 An object of the present invention is to provide a nickel film having excellent softness and a method for producing the same.
本發明者等,找出使用特定方法所得到之多孔質之鎳薄膜,比起使用傳統方法所得到之鎳薄膜於極高的柔軟度特別優良。亦即,本發明包含以下事項。 The inventors of the present invention have found that a porous nickel film obtained by a specific method is particularly excellent in extremely high softness compared to a nickel film obtained by a conventional method. That is, the present invention includes the following matters.
〔1〕一種多孔質鎳薄膜,其特徵係具有15.0N/mm以下之柔軟值,前述柔軟值係藉由以下方法測定的值:藉由被測物支撐治具,形成鎳薄膜關閉形狀之非支撐區域,而支撐前述鎳薄膜之所有周邊之步驟;對前述鎳薄膜,將押入治具之一端垂直地押入前述非支撐區域,測定前述押入治具所受到的力及前述押入治具之變位量之關係之步驟;押入治具所受到的力(N)除以押入治具的變位量(mm)所得的值(N/mm)作為前述柔軟值之計算步驟。 [1] A porous nickel film characterized by having a soft value of 15.0 N/mm or less, and the soft value is a value measured by a method of supporting a jig by a test object to form a nickel film closed shape. a step of supporting the periphery of the nickel film in the unsupported region; and for the nickel film, one end of the jig is vertically inserted into the unsupported region, and the force applied to the jig and the change of the abutting jig are measured. The step of the relationship between the digits; the force (N) subjected to the jig is divided by the value (N/mm) obtained by the amount of displacement (mm) of the jig as the calculation step of the soft value.
〔2〕如前述〔1〕所記載之多孔質鎳薄膜,其中,膜厚係0.1~100μm。 [2] The porous nickel thin film according to the above [1], wherein the film thickness is 0.1 to 100 μm.
〔3〕一種用以多孔質鎳薄膜之方法,其特徵係具備使用含有鎳鹽、及界面活性劑之電解鎳鍍浴,在導電性基材上形成鎳鍍覆膜之步驟;燃燒除去前述鎳鍍覆膜中含有的界面活性劑,熱處理前述鎳鍍覆膜之步驟。 [3] A method for using a porous nickel film, comprising the steps of forming a nickel plating film on a conductive substrate using an electrolytic nickel plating bath containing a nickel salt and a surfactant; and burning the nickel A step of heat-treating the nickel plating film by using a surfactant contained in the plating film.
〔4〕如前述〔3〕所記載之方法,其中,前述多孔質鎳薄膜具有15.0N/mm以下之柔軟值, 前述柔軟值係藉由具備以下步驟之方法測定的值:藉由被測物支撐治具,形成鎳薄膜關閉形狀之非支撐區域,而支撐前述鎳薄膜之所有周邊之步驟;對前述鎳薄膜,將押入治具之一端垂直地押入前述非支撐區域,測定前述押入治具所受到的力及前述押入治具的變位量之關係之步驟;押入治具所受到的力(N)除以押入治具之變位量(mm)所得的值(N/mm)作為前述柔軟值之計算步驟。 [4] The method according to the above [3], wherein the porous nickel film has a soft value of 15.0 N/mm or less. The softness value is a value measured by a method of supporting a jig by forming a non-supporting region of a nickel film closed shape by supporting a jig, and supporting all the periphery of the nickel film; Placing one end of the jig into the unsupported area vertically, and measuring the relationship between the force applied to the jig and the displacement amount of the abutting jig; the force (N) received by the jig is divided by the push The value (N/mm) obtained by the amount of deformation of the jig (mm) is used as a calculation step of the aforementioned soft value.
〔5〕如前述〔3〕或〔4〕所記載之方法,其中,前述界面活性劑係包含負離子系界面活性劑。 [5] The method according to the above [3] or [4] wherein the surfactant is a negative ion surfactant.
〔6〕如前述〔5〕所記載之方法,其中,前述負離子系界面活性劑包含係選自聚氧化亞烷基烷基醚硫酸鹽、聚氧化亞烷基烷基醚碳酸鹽、及烷基苯磺酸鹽所成群之化合物。 [6] The method according to the above [5], wherein the negative ion surfactant comprises a polyoxyalkylene alkyl ether sulfate, a polyoxyalkylene alkyl ether carbonate, and an alkyl group. a compound of the group consisting of besylate.
〔7〕如前述〔3〕至〔6〕任一項所記載之方法,其中,形成前述鎳鍍覆膜之步驟係包含進行脈衝電鍍之步驟。 [7] The method according to any one of [3] to [6] wherein the step of forming the nickel plating film includes a step of performing pulse plating.
〔8〕如前述〔3〕至〔7〕任一項所記載之方法,其中,前述導電性基材係Ti基材、Cu基材、SUS基材、賦予導電性之玻璃、或賦予導電性之樹脂。 [8] The method according to any one of the above [3], wherein the conductive substrate is a Ti substrate, a Cu substrate, a SUS substrate, a glass that imparts conductivity, or imparts conductivity. Resin.
〔9〕如前述〔3〕至〔8〕任一項所記載之方法,其中,進一步包含從前述導電性基材上剝離前述多孔質鎳薄膜之步驟。 [9] The method according to any one of [3] to [8], further comprising the step of removing the porous nickel thin film from the conductive substrate.
根據本發明,可提供優良柔軟度之鎳薄膜及其製造方法。 According to the present invention, a nickel film excellent in softness and a method for producing the same can be provided.
1‧‧‧導電性基材 1‧‧‧Electrically conductive substrate
2‧‧‧鎳鍍覆膜 2‧‧‧ Nickel plating film
3‧‧‧鎳薄膜 3‧‧‧ Nickel film
4‧‧‧空孔 4‧‧‧ holes
10‧‧‧評價裝置 10‧‧‧Evaluation device
11‧‧‧台座 11‧‧‧ pedestal
12‧‧‧被測物支撐治具 12‧‧‧Measurement support fixture
12-1‧‧‧挾持部材 12-1‧‧‧ Maintaining materials
12-2‧‧‧挾持部材 12-2‧‧‧ Maintaining materials
13‧‧‧押入治具支撐部 13‧‧‧Admitted to the Fixture Support Department
14‧‧‧押入治具 14‧‧‧Entering fixtures
15‧‧‧驅動機構 15‧‧‧Drive mechanism
17‧‧‧開口 17‧‧‧ openings
18‧‧‧測定裝置 18‧‧‧Measurement device
18-1‧‧‧秤重傳感器 18-1‧‧‧Weighing sensor
18-2‧‧‧編碼器 18-2‧‧‧Encoder
19-1‧‧‧螺紋 19-1‧‧‧Thread
19-2‧‧‧螺紋 19-2‧‧‧Thread
【圖1A】圖1A係概略地表示多孔質鎳薄膜之製造方法之斷面圖。 Fig. 1A is a cross-sectional view schematically showing a method of producing a porous nickel film.
【圖1B】圖1B係概略地表示多孔質鎳薄膜之製造方法之斷面圖。 Fig. 1B is a cross-sectional view schematically showing a method of producing a porous nickel film.
【圖1C】圖1C係概略地表示多孔質鎳薄膜之製造方法之斷面圖。 Fig. 1C is a cross-sectional view schematically showing a method of producing a porous nickel film.
【圖1D】圖1D係概略地表示多孔質鎳薄膜之製造方法之斷面圖。 Fig. 1D is a cross-sectional view schematically showing a method of producing a porous nickel film.
【圖2】圖2係表示評價裝置之外觀圖。 Fig. 2 is an external view showing an evaluation apparatus.
【圖3】圖3係表示評價裝置之模式圖。 Fig. 3 is a schematic view showing an evaluation apparatus.
【圖4】圖4係概略地表示一對的挾持部材之斷面圖。 Fig. 4 is a cross-sectional view schematically showing a pair of holding members.
【圖5】圖5係表示押入治具之一例之概略圖。 Fig. 5 is a schematic view showing an example of a jig.
【圖6】圖6係表示柔軟度之評價方法之模式圖。 Fig. 6 is a schematic view showing a method of evaluating softness.
【圖7】圖7係表示柔軟度之測定結果之圖表。 Fig. 7 is a graph showing the results of measurement of softness.
【圖8】圖8係表示柔軟值之計算結果之圖表。 Fig. 8 is a graph showing the calculation result of the soft value.
以下,說明本發明之實施態樣。 Hereinafter, embodiments of the present invention will be described.
圖1A至圖1D係概略地表示本實施態樣中多孔質鎳薄膜之製造方法之斷面圖。 1A to 1D are cross-sectional views schematically showing a method of producing a porous nickel film in the present embodiment.
首先,如圖1A所示,準備導電性基材1。 First, as shown in FIG. 1A, a conductive substrate 1 is prepared.
接著,如圖1B所示,在導電性基材1上形成鎳鍍覆膜2。鎳鍍覆膜2,係使用含有鎳鹽及界面活性劑之電解鎳鍍浴所形成。此時,因電解鎳 鍍浴含有界面活性劑,所形成之鎳鍍覆膜2中,含有界面活性劑。 Next, as shown in FIG. 1B, a nickel plating film 2 is formed on the conductive substrate 1. The nickel plating film 2 is formed using an electrolytic nickel plating bath containing a nickel salt and a surfactant. At this time, due to electrolytic nickel The plating bath contains a surfactant, and the formed nickel plating film 2 contains a surfactant.
接著,如圖1C所示,對鎳鍍覆膜2施予熱處理。藉由施予熱處理,可燃燒除去鎳鍍覆膜2中含有的界面活性劑。其結果,鎳鍍覆膜2中,形成於膜厚方向貫通之空孔4,得到多孔質鎳薄膜3。 Next, as shown in FIG. 1C, the nickel plating film 2 is subjected to heat treatment. The surfactant contained in the nickel plating film 2 can be burned and removed by applying heat treatment. As a result, in the nickel plating film 2, the pores 4 penetrating in the film thickness direction are formed, and the porous nickel film 3 is obtained.
鎳薄膜3作為單膜使用時,如圖1D所示,從導電性基材1剝離鎳薄膜3。此種情形,為了剝離鎳薄膜3,導電性基材1事先使用與鎳薄膜3之密著性低的基材即可。該種基材,可例舉例如,Ti基材、Cu基材、及SUS基材等之金屬基材,以及賦予導電性之玻璃及樹脂材等。又,為了除去界面活性劑之熱處理,亦可將鎳薄膜3從導電性基材1剝離後實施。 When the nickel thin film 3 is used as a single film, as shown in FIG. 1D, the nickel thin film 3 is peeled off from the conductive substrate 1. In this case, in order to peel off the nickel thin film 3, the conductive base material 1 may be used in advance with a substrate having low adhesion to the nickel thin film 3. Examples of such a substrate include a metal substrate such as a Ti substrate, a Cu substrate, and a SUS substrate, and a glass or resin material that imparts conductivity. Further, in order to remove the heat treatment of the surfactant, the nickel thin film 3 may be peeled off from the conductive substrate 1 and then applied.
另一方面,鎳薄膜3並非必定要從導電性基材1剝離。因應用途,不從導電性基材1分離,導電性基材1及鎳薄膜3之積層體作為最終用途使用亦可。 On the other hand, the nickel thin film 3 is not necessarily peeled off from the conductive substrate 1. The laminated substrate of the conductive substrate 1 and the nickel thin film 3 may be used as a final use without being separated from the conductive substrate 1 for the purpose of use.
若使用上述之製造方法,可得到優良柔軟度之多孔質鎳薄膜3。具體而言,藉由使用上述之製造方法,可得到多孔質鎳薄膜3之柔軟值係15.0N/mm以下、較佳係10.0N/mm以下、更佳係1.0~10.0N/mm、特佳係3.0~8.0N/mm。具有此種柔軟值之多孔質鎳薄膜3,係可藉由本發明之製造方法得到之新穎金屬膜,柔軟度優良,可用於各種用途。 When the above-described production method is used, a porous nickel film 3 excellent in softness can be obtained. Specifically, by using the above-described production method, the soft nickel film 3 can have a softness value of 15.0 N/mm or less, preferably 10.0 N/mm or less, and more preferably 1.0 to 10.0 N. /mm, especially good 3.0~8.0N/mm. The porous nickel film 3 having such a soft value is a novel metal film obtainable by the production method of the present invention, and has excellent softness and can be used for various purposes.
又,本說明書中,「柔軟值」,可藉由後述之多孔質鎳薄膜之評價方法及實施例中說明之方法求得。 In the present specification, the "softness value" can be determined by a method for evaluating a porous nickel film to be described later and a method described in the examples.
此外,在本實施態樣得到的多孔質鎳薄膜3,耐熱性亦優良。以壓延 法製造之鎳薄膜,在高溫加熱時進行氧化,有可能並無法維持其形狀之情形。相對於此,本實施態樣得到的多孔質鎳薄膜3,在高溫加熱亦能維持形狀。 Further, the porous nickel film 3 obtained in the present embodiment is also excellent in heat resistance. Calender The nickel film produced by the method is oxidized at a high temperature and may not be able to maintain its shape. On the other hand, the porous nickel thin film 3 obtained in the present embodiment can maintain its shape even when heated at a high temperature.
本實施態樣中得到之鎳薄膜3之膜厚係在0.1μm~100μm為佳、在1μm~10μm為更佳、在2μm~8μm為特佳。若膜厚過大,則多孔質化變得困難,加工難度上升,製造成本容易上升。另一方面,若膜厚過小,則容易變得強度不足。 The film thickness of the nickel thin film 3 obtained in the present embodiment is preferably 0.1 μm to 100 μm, more preferably 1 μm to 10 μm, and particularly preferably 2 μm to 8 μm. When the film thickness is too large, the porosity becomes difficult, the processing difficulty increases, and the production cost tends to increase. On the other hand, if the film thickness is too small, the strength tends to be insufficient.
本實施態樣中得到之鎳薄膜3之用途並無特別限定,例如,用於高性能觸媒膜;高功能性過濾器;塗佈、塗裝、及鍍覆用之基層皮膜;在高溫下使用之功能性皮膜及放熱性皮膜;以及滑動部件之表面皮膜等。 The use of the nickel film 3 obtained in the present embodiment is not particularly limited, and is, for example, used for a high performance catalyst film; a high-functional filter; a base film for coating, coating, and plating; at a high temperature The functional film and the exothermic film to be used; and the surface film of the sliding member.
作為高性能觸媒膜使用時,其可直接單獨,或者在鎳薄膜3之空孔內,分散、支持Pt及Pd粒子等之觸媒粒子。作為高功能性過濾器使用時,使用在鎳薄膜3形成之貫通空孔作為流體之流路。相對於高性能觸媒膜及高功能性過濾器等,從皮膜壽命之觀點而言,柔軟度為重要,因本實施態樣之鎳薄膜3可滿足該種要求而較佳。 When used as a high-performance catalyst film, it can disperse and support catalyst particles such as Pt and Pd particles directly or in the pores of the nickel film 3. When used as a highly functional filter, a through hole formed in the nickel thin film 3 is used as a fluid flow path. The softness is important from the viewpoint of film life with respect to a high-performance catalyst film, a highly functional filter, etc., and the nickel film 3 of the present embodiment can satisfy such requirements.
此外,本實施態樣所得到的鎳薄膜3,因在高溫環境下不會被破壞,可用於要求耐熱性之功能性皮膜及放熱性皮膜。 Further, the nickel thin film 3 obtained in the present embodiment can be used for a functional film and a heat releasing film which are required to have heat resistance because they are not damaged in a high temperature environment.
更進一步,本實施態樣之鎳薄膜3,因設有空孔而具有高的表面積。因此,作為塗佈、塗裝、及鍍覆用之基層皮膜使用時,可提高鎳薄膜3及於其上形成之膜之間之物理密著性。 Further, the nickel thin film 3 of the present embodiment has a high surface area due to the provision of voids. Therefore, when used as a base film for coating, coating, and plating, the physical adhesion between the nickel thin film 3 and the film formed thereon can be improved.
此外,本實施態樣之鎳薄膜3作為滑動部件之表面皮膜使用時,因設有空孔而可提高潤滑油之保持性能,可延長滑動部件之壽命。 Further, when the nickel film 3 of the present embodiment is used as a surface film of a sliding member, the retention of the lubricating oil can be improved by providing the pores, and the life of the sliding member can be extended.
(鍍浴及鍍覆條件) (plating bath and plating conditions)
接著,詳細說明本實施態樣所使用之電解鎳鍍浴及鍍覆條件。如上述,本實施態樣所使用之鍍浴,含有鎳鹽及界面活性劑之水溶液。 Next, the electrolytic nickel plating bath and plating conditions used in the present embodiment will be described in detail. As described above, the plating bath used in the present embodiment contains an aqueous solution of a nickel salt and a surfactant.
鎳鹽,作為鎳離子之供給源之作用。鎳鹽,雖無特別限定,較佳係使用選自胺磺酸Ni、氯化Ni、硫酸Ni、及檸檬酸Ni所成群之化合物。此等之中,鎳鹽含有胺磺酸Ni為佳。藉由使用胺磺酸Ni,可得到內部應力低、柔軟性高的皮膜。 Nickel salt acts as a source of nickel ions. The nickel salt is not particularly limited, and a compound selected from the group consisting of Nisulfonic acid Ni, Ni chloride Ni, Ni sulfate, and Ni citrate is preferably used. Among these, the nickel salt preferably contains amine sulfonic acid Ni. By using Nisulfonic acid sulfonic acid, a film having low internal stress and high flexibility can be obtained.
鍍浴中之鎳鹽之濃度在100g/L~800g/L為佳。若鎳鹽之濃度過高,則界面活性劑之飽和溶解濃度降低,多孔質化變得困難,柔軟性容易受損。若鎳鹽之濃度過低,則由於金屬鹽之濃度不足而臨界電流密度降低,皮膜形成時變得容易產生氫氣,基層之導電性基材1吸入氫,變得容易產生裂痕。此外Ni鍍覆皮膜容易變得粗糙且針孔多。 The concentration of the nickel salt in the plating bath is preferably from 100 g/L to 800 g/L. When the concentration of the nickel salt is too high, the saturated dissolved concentration of the surfactant decreases, and the porosity becomes difficult, and the flexibility is easily impaired. When the concentration of the nickel salt is too low, the critical current density is lowered due to the insufficient concentration of the metal salt, and hydrogen gas is easily generated during the formation of the film, and the conductive substrate 1 of the base layer absorbs hydrogen and is likely to be cracked. In addition, the Ni plating film tends to be rough and has many pinholes.
鍍浴中含有的界面活性劑,較佳係使用離子性界面活性劑。離子性界面活性劑,較佳係使用負離子系界面活性劑。 The surfactant contained in the plating bath is preferably an ionic surfactant. As the ionic surfactant, an anionic surfactant is preferably used.
負離子系界面活性劑之合適的例子,可例舉選自聚氧化亞烷基烷基醚硫酸鹽、聚氧化亞烷基烷基醚碳酸鹽、聚氧化亞烷基烷基醚磺基琥珀酸鹽、聚氧化亞烷基烷基醚磷酸鹽、聚氧化亞烷基烷基醚醋酸鹽、烷基苯磺酸鹽、高級醇硫酸鹽、聚氧化亞烷基苯乙烯化苯基醚硫酸鹽、烷基二苯基醚磺酸鹽、二烷基磺基琥珀酸鹽、烷基磺酸鹽、2級烷基磺酸鹽、烷基萘磺酸鹽、萘磺酸鹽甲醛縮合物、高級醇磷酸酯鹽、聚氧化亞烷基苯乙烯化苯基醚磷酸鹽、脂肪酸石鹼、歧化松香石鹼、及磺化蓖麻油所成群之化合物。此等之中,選自聚氧化亞烷基烷基醚硫酸鹽、聚氧化亞烷基烷基醚碳酸鹽、聚 氧化亞烷基烷基醚醋酸鹽、及烷基苯磺酸鹽之化合物為更佳。 Suitable examples of the anionic surfactant are selected from the group consisting of polyoxyalkylene alkyl ether sulfates, polyoxyalkylene alkyl ether carbonates, polyoxyalkylene alkyl ether sulfosuccinates. , polyoxyalkylene alkyl ether phosphate, polyoxyalkylene alkyl ether acetate, alkyl benzene sulfonate, higher alcohol sulfate, polyoxyalkylene styrenated phenyl ether sulfate, alkane Diphenyl ether sulfonate, dialkyl sulfosuccinate, alkyl sulfonate, alkyl alkane sulfonate, alkyl naphthalene sulfonate, naphthalene sulfonate formaldehyde condensate, higher alcohol phosphate A compound of a group of ester salts, polyoxyalkylene styrenated phenyl ether phosphates, fatty acid rock bases, disproportionated rosinine, and sulfonated castor oil. Among these, selected from polyoxyalkylene alkyl ether sulfates, polyoxyalkylene alkyl ether carbonates, poly More preferred are oxyalkylene alkyl ether acetates and alkylbenzene sulfonate compounds.
此外,聚氧化亞烷基烷基醚硫酸鹽及聚氧化亞烷基烷基醚碳酸鹽係,在下述式1所示,含有環氧乙烷之化合物為佳。 Further, the polyoxyalkylene alkyl ether sulfate and the polyoxyalkylene alkyl ether carbonate are preferably those having an ethylene oxide compound represented by the following formula 1.
(式1):R1-O-(CH2CH2O)n-X (Formula 1): R1-O-(CH 2 CH 2 O) n -X
又,式1中,R1表示烷基,較佳係碳數10~16、更佳係碳數12~14之烷基。X表示硫酸鹽或碳酸鹽。n係1~20、更佳係2~12。 Further, in the formula 1, R1 represents an alkyl group, preferably an alkyl group having 10 to 16 carbon atoms, more preferably 12 to 14 carbon atoms. X represents a sulfate or carbonate. n is 1~20, and better is 2~12.
此外,烷基苯磺酸鹽,係烷基之碳數為8~16之化合物為佳,更佳係十二烷基苯磺酸鹽。 Further, the alkylbenzenesulfonate is preferably a compound having an alkyl group having 8 to 16 carbon atoms, more preferably a dodecylbenzenesulfonate.
負離子系界面活性劑之鹽所使用之反離子,可例舉鈉鹽、鈣鹽等之鹼金屬鹽、鹼土金屬鹽、銨鹽、烷醇胺鹽等,此等之中以鹼金屬鹽為佳、鈉鹽為更佳。 The counter ion to be used for the salt of the negative ion surfactant may, for example, be an alkali metal salt such as a sodium salt or a calcium salt, an alkaline earth metal salt, an ammonium salt or an alkanolamine salt. Among them, an alkali metal salt is preferred. The sodium salt is better.
鍍浴中之界面活性劑之濃度,在0.1mL/L~100mL/L為佳、在1mL/L~50mL/L為更佳、在5mL/L~30mL/L為特佳。若界面活性劑之濃度過高,則阻礙鍍覆析出,難以得到緻密的皮膜。另一方面,若濃度過低,則多孔質化變得困難,難以得到所期望的柔軟度。 The concentration of the surfactant in the plating bath is preferably from 0.1 mL/L to 100 mL/L, more preferably from 1 mL/L to 50 mL/L, and particularly preferably from 5 mL/L to 30 mL/L. When the concentration of the surfactant is too high, plating deposition is inhibited, and it is difficult to obtain a dense film. On the other hand, when the concentration is too low, it becomes difficult to obtain porosity, and it is difficult to obtain desired softness.
鍍浴亦可進一步添加pH調整劑、pH緩衝劑、應力緩和劑等之其他的添加劑。pH調整劑可使用,例如,硫酸、胺基磺酸、氫氧化鎳等。應力緩和劑可使用,例如,糖精等。 Further additives such as a pH adjuster, a pH buffer, and a stress relieving agent may be further added to the plating bath. As the pH adjuster, for example, sulfuric acid, aminosulfonic acid, nickel hydroxide or the like can be used. A stress relieving agent can be used, for example, saccharin or the like.
鍍浴之pH值在2.0~4.5為佳。若pH值過高,則臨界電流密度降低、易產生氫氣、導電性基材1變得容易吸入氫。此外,Ni皮膜容 易變硬並脆弱。另一方面,若pH值過低,則變得容易促進鍍浴成分之分解。 The pH of the plating bath is preferably from 2.0 to 4.5. When the pH is too high, the critical current density is lowered, hydrogen gas is easily generated, and the conductive substrate 1 is easily sucked into hydrogen. In addition, Ni film capacity It is hard and hard. On the other hand, if the pH is too low, the decomposition of the plating bath component is easily promoted.
鍍覆時鍍浴之浴溫,在40℃~65℃為家。若浴溫過高,則變得容易進行浴成分之分解。另一方面,若浴溫過低,則容易沉澱界面活性劑。此外,Ni容易異常析出。 The bath temperature of the plating bath during plating is at 40 ° C ~ 65 ° C for home. If the bath temperature is too high, it becomes easy to decompose the bath components. On the other hand, if the bath temperature is too low, the surfactant is easily precipitated. In addition, Ni tends to precipitate abnormally.
電鍍雖可直流電解,而藉由脈衝電鍍進行更佳。使用脈衝電鍍時,於析出初期基層之導電性基材1分散吸著界面活性劑,可促進鍍覆中界面活性劑與鎳之共析。 Although electroplating can be performed by direct current electrolysis, it is better by pulse plating. When pulse plating is used, the surfactant is dispersed and adsorbed on the conductive substrate 1 in the initial stage of precipitation, and the co-deposition of the surfactant and nickel in the plating can be promoted.
使用脈衝電鍍時,平均電流密度在1A/dm2~20A/dm2為佳。若平均電流密度過高,則過度產生氫,並對基層之導電性基材1造成影響。此外,並可能導致Ni之異常析出之情形。另一方面,若平均電流密度過低,則難以進行多孔質化,難以得到所期望之柔軟度。此外,生產性降低。 When pulse plating is used, the average current density is preferably 1 A/dm 2 to 20 A/dm 2 . When the average current density is too high, hydrogen is excessively generated and the conductive substrate 1 of the base layer is affected. In addition, it may cause an abnormal precipitation of Ni. On the other hand, if the average current density is too low, it is difficult to make the porous, and it is difficult to obtain the desired softness. In addition, productivity is lowered.
脈衝電流密度在2A/dm2~20A/dm2為佳。若脈衝電流密度過高,則伴隨著過度產生氫,並對基層之導電性基材1造成影響。若脈衝電流密度過低,則難以進行多孔質化,生產性降低。 The pulse current density is preferably 2 A/dm 2 to 20 A/dm 2 . When the pulse current density is too high, hydrogen is excessively generated and the conductive substrate 1 of the base layer is affected. When the pulse current density is too low, it is difficult to perform porosity and productivity is lowered.
脈衝施加時間ton及脈衝停止時間toff之比(ton/toff)在0.1~10為佳。若比(ton/toff)值過大,則多孔質化困難,難以得到所期望之柔軟度。此外,若過低則多孔質化困難,難以得到所期望之柔軟度。 The ratio of the pulse application time ton to the pulse stop time toff (ton/toff) is preferably 0.1 to 10. If the ton/toff value is too large, the porosity is difficult, and it is difficult to obtain the desired softness. Moreover, if it is too low, it becomes difficult to make a porous, and it is difficult to obtain the desired softness.
脈衝頻率在0.1~1000(Hz)為佳。若脈衝頻率過大,則多孔質化困難,難以得到所期望之柔軟度。此外,若過低則多孔質化困難, 難以得到所期望之柔軟度。 The pulse frequency is preferably 0.1 to 1000 (Hz). If the pulse frequency is too large, the porosity is difficult, and it is difficult to obtain the desired softness. In addition, if it is too low, it is difficult to make it porous. It is difficult to obtain the desired softness.
(熱處理條件) (heat treatment conditions)
接著,說明關於燃燒除去界面活性劑之熱處理條件。熱處理係,例如,在大氣中或者氫等之還原氣體環境中,抑或氮、氬等之惰性氣體環境中,實施燃燒除去界面活性劑之條件。 Next, the heat treatment conditions for the removal of the surfactant by combustion will be described. The heat treatment is carried out, for example, in a reducing gas atmosphere such as the atmosphere or hydrogen, or in an inert gas atmosphere such as nitrogen or argon, to carry out the conditions for burning and removing the surfactant.
詳細而言,熱處理溫度,例如350℃~900℃。此外,加熱時間,例如10分~120分。若加熱溫度過高,則量產加工時之成本容易上昇。此外,基層之導電性基材1與鎳鍍覆膜2之間易形成相互擴散層,而易損害柔軟度。另一方面,加熱處理溫度過低時,難以出現多孔質化,得不到所期望之柔軟度。此外,加熱時間過長時,亦容易形成相互擴散層。此外,若加熱時間過短,則難以出現多孔質化,而柔軟度受損。 Specifically, the heat treatment temperature is, for example, 350 ° C to 900 ° C. In addition, the heating time is, for example, 10 minutes to 120 minutes. If the heating temperature is too high, the cost at the time of mass production processing tends to increase. Further, an interdiffusion layer is easily formed between the conductive substrate 1 of the base layer and the nickel plating film 2, and the softness is easily impaired. On the other hand, when the heat treatment temperature is too low, it is less likely to be porous, and the desired softness cannot be obtained. Further, when the heating time is too long, the interdiffusion layer is easily formed. Further, if the heating time is too short, it is difficult to cause porosity and the softness is impaired.
(多孔質鎳薄膜之評價方法) (Evaluation method of porous nickel film)
如上述,藉由本實施態樣之方法所製造之鎳薄膜3,具有優良柔軟度之特性。詳細而言,可得到「柔軟值」15.0N/mm以下之多孔質鎳薄膜3。於此,「柔軟值」,係使用以下說明之評價方法所求得之值。 As described above, the nickel thin film 3 produced by the method of the present embodiment has excellent softness characteristics. Specifically, a porous nickel film 3 having a "soft value" of 15.0 N/mm or less can be obtained. Here, the "soft value" is a value obtained by the evaluation method described below.
圖2,係表示用於柔軟值之評價方法之評價裝置10之外觀圖。此外,圖3,係表示評價裝置10之模式圖。如圖2及圖3所示,評價裝置10具備本體部16、台座11、押入治具支撐部13、測定裝置18、押入治具14、被測物支撐治具12、及驅動機構15。又,押入治具14及被測物支撐治具12可拆卸,僅於圖3繪製,而於圖2未繪製。 Fig. 2 is an external view showing an evaluation apparatus 10 for an evaluation method of a soft value. In addition, FIG. 3 is a schematic diagram showing the evaluation apparatus 10. As shown in FIGS. 2 and 3 , the evaluation device 10 includes a main body portion 16 , a pedestal 11 , a push jig support portion 13 , a measurement device 18 , a push jig 14 , a test object support jig 12 , and a drive mechanism 15 . Further, the jig 14 and the test fixture 12 are detachable, and are only drawn in FIG. 3, and are not drawn in FIG.
台座11,係為了支撐被測物支撐治具12所設置,經由本體部16所支撐。 The pedestal 11 is supported by the body portion 16 in order to support the test object supporting jig 12 .
被測物支撐治具12,係為了支撐試驗對象之鎳薄膜3所設置(參照圖3)。被測物支撐治具12,係於台座11可自在拆卸而安裝。圖4,係概略地表示被測物支撐治具12之斷面圖。被測物支撐治具12,具有一對的挾持部材(12-1及12-2)。一邊之挾持部材12-1設置開口17。另一邊之挾持部材12-2於開口17之對應位置設置凹部16。開口17及凹部16,分別具有既定之直徑a之圓形。又,挾持部材12-2,亦可代替凹部16設置開口。此外,在各挾持部材(12-1、12-2),設置螺紋(19-1及19-2),以挾持鎳薄膜3之狀態,挾持部材12-1可螺合於挾持部材12-2。鎳薄膜3之中央部,亦即對應開口17之區域,並無接觸被測物支撐治具12。亦即,被測物支撐治具12,係支撐鎳薄膜3之整個周圍之構成,且鎳薄膜3之中央部,對應開口17形成封閉形狀之非支撐區域。 The test object supporting jig 12 is provided to support the nickel film 3 of the test object (refer to FIG. 3). The test object supporting fixture 12 is attached to the pedestal 11 and can be installed by itself. Fig. 4 is a cross-sectional view schematically showing the test object supporting jig 12. The object to be tested supports the jig 12 and has a pair of holding members (12-1 and 12-2). The opening portion 17 is provided on one side of the holding member 12-1. The other holding member 12-2 is provided with a recess 16 at a corresponding position of the opening 17. The opening 17 and the recess 16 each have a circular shape with a predetermined diameter a. Further, the holding member 12-2 may be provided with an opening instead of the recessed portion 16. Further, in each of the holding members (12-1, 12-2), the threads (19-1 and 19-2) are provided to hold the nickel film 3, and the holding member 12-1 can be screwed to the holding member 12-2. . The central portion of the nickel film 3, that is, the region corresponding to the opening 17, does not contact the test object supporting jig 12. That is, the test object supporting fixture 12 is configured to support the entire circumference of the nickel film 3, and the central portion of the nickel film 3 forms a closed shape unsupported region corresponding to the opening 17.
押入治具支撐部13(參照圖2及圖3),係為了支撐押入治具14所設置。押入治具支撐部13,相對於鎳薄膜3可垂直方向移動,並安裝於本體部16。 The jig support portion 13 (see FIGS. 2 and 3) is attached to support the jig 14 . The jig support portion 13 is moved in the vertical direction with respect to the nickel film 3, and is attached to the main body portion 16.
驅動機構15,安裝於本體部16,並具有使押入治具支撐部13移動之功能。驅動機構15,例如馬達。 The drive mechanism 15 is attached to the main body portion 16 and has a function of moving the jig support portion 13. The drive mechanism 15, such as a motor.
押入治具14係棒狀。押入治具14,在鎳薄膜3之上方,相對於鎳薄膜3之垂直方向延伸,藉由押入治具支撐部13支撐。此外,押入治具14,係其一端(下端)位於挾持部材12-1所設置之開口17之中心之正上方而配置。 The jig is placed in a 14-bar shape. The jig 14 is pushed over the nickel film 3 so as to extend in the vertical direction with respect to the nickel film 3, and is supported by the jig support portion 13. Further, the jig 14 is placed such that one end (lower end) thereof is disposed directly above the center of the opening 17 provided in the holding member 12-1.
圖5,係概略地表示押入治具14之一例之概略圖。較佳係,如圖5 所示,押入治具14之一端,具有對應既定直徑b之球之一部分之形狀。 Fig. 5 is a schematic view showing an example of the pushing jig 14. Better, as shown in Figure 5. As shown, one end of the jig 14 has a shape corresponding to a portion of the ball of a predetermined diameter b.
測定裝置18(參照圖3),係具有若對押入治具14施加力量,則檢測押入治具14之變位量之功能。詳細而言,測定裝置18,具有秤重傳感器18-1及編碼器18-2。秤重傳感器18-1,設置於押入治具支撐部13及押入治具14之間,具有檢測對押入治具14施加力量之功能。編碼器18-2,連接於驅動機構15,並檢測押入治具支撐部13之變位量,即押入治具14之變位量之構成。 The measuring device 18 (see FIG. 3) has a function of detecting the amount of displacement of the jig 14 when a force is applied to the jig. Specifically, the measuring device 18 includes a weighing sensor 18-1 and an encoder 18-2. The weighing sensor 18-1 is provided between the push jig support portion 13 and the urging jig 14 and has a function of detecting the force applied to the plunging jig 14. The encoder 18-2 is connected to the drive mechanism 15 and detects the amount of displacement of the jig support portion 13, that is, the amount of displacement of the jig 14.
接著,說明本發明之評價方法。 Next, the evaluation method of the present invention will be described.
首先,藉由被測物支撐治具12支撐鎳薄膜3之試驗片,並安裝於台座11。此外,押入治具14介由秤重傳感器18-1而安裝於押入治具支撐部13。 First, the test piece supporting the nickel film 3 by the test object supporting fixture 12 is attached to the pedestal 11. Further, the push jig 14 is attached to the jig support portion 13 via the weighing sensor 18-1.
接著,藉由驅動機構15,使押入治具支撐部13向下方(被測物支撐治具12側)移動。藉此,如圖6所示,押入治具14之一端,從開口17之中心,垂直地押入鎳薄膜3。押入治具14,押入直到穿破鎳薄膜3。此時,藉由測定裝置18,測定押入治具14所受的力及押入治具14之變位量。測定結果,作為表示押入治具14所受的力及押入治具14之變位量之關係之數據,儲存至電腦(未圖示)等。 Then, the driving fixture 15 moves the pressing jig support portion 13 downward (on the side of the object supporting fixture 12). Thereby, as shown in Fig. 6, one end of the jig 14 is pushed, and the nickel film 3 is vertically pushed from the center of the opening 17. The jig 14 is pushed in and pushed in until the nickel film 3 is worn. At this time, the force applied to the jig 14 and the amount of displacement of the jig 14 are measured by the measuring device 18. As a result of the measurement, the data indicating the relationship between the force applied to the jig 14 and the displacement amount of the jig 14 is stored in a computer (not shown) or the like.
基於得到的數據,計算鎳薄膜3之柔軟值。於此,本說明書中「柔軟值」,係藉由押入治具所受到的力(N)除以押入治具之變位量(mm)所得的值(N/mm)所代表的數值,該數值越小,表示越柔軟。詳細而言,變位量為橫軸,押入治具14所受到的力(試驗力)為縱軸作成圖表,藉由求出線性良好範圍(例如藉由線性近似求出之相關係數R2超過 0.9之區域)之斜率,可算出柔軟值。 Based on the obtained data, the soft value of the nickel film 3 was calculated. Here, the "soft value" in the present specification is a value represented by a value (N/mm) obtained by dividing a force (N) applied to the jig by a displacement amount (mm) of the jig. The smaller the value, the softer the expression. Specifically, the displacement amount is the horizontal axis, and the force (test force) received by the jig 14 is plotted on the vertical axis, and a linear good range is obtained (for example, the correlation coefficient R 2 obtained by linear approximation exceeds The slope of the area of 0.9 can be used to calculate the soft value.
藉由上述評價方法,可適切地評價具有0.1~100μm之膜厚之鎳薄膜3之柔軟度。 According to the above evaluation method, the softness of the nickel film 3 having a film thickness of 0.1 to 100 μm can be appropriately evaluated.
又,挾持部材12-1所設置之開口17之直徑a(參照圖4),在9mm~14mm為佳、在10mm~13mm為更佳、在11mm~12mm為特佳。直徑a過小時,對於試驗力無法得到足夠的變位量;過大時,則需要大的樣品面積。 Further, the diameter a (see FIG. 4) of the opening 17 provided in the holding member 12-1 is preferably 9 mm to 14 mm, more preferably 10 mm to 13 mm, and particularly preferably 11 mm to 12 mm. When the diameter a is too small, a sufficient amount of displacement cannot be obtained for the test force; when it is too large, a large sample area is required.
押入治具14之一端之形狀(參照圖5)並無特別限定,而如前述,具有對應直徑b之球之一部分之形狀為佳。例如,押入治具14之一端之形狀為多角形之情形,押入治具14以角的部分接觸試驗片,試驗力集中於角部分,試驗片變得容易在途中撕裂。其結果,試驗力-變位量圖表中,難以確保具有高線性關係之區域。此外,押入治具14之一端之形狀為平板圓形等之平板形狀時,因此平板形狀之端部使試驗片形成銳角而變形,難以得到高線性關係。相對於此,押入治具14之一端之形狀為具有對應球之一部分之形狀之情形,可得到以面押入試驗片之效果。詳細而言,押入治具14之押入時,因試驗片形成鈍角的同時平滑地拉伸,易得到更高的線性關係。 The shape of one end of the jig 14 (refer to FIG. 5) is not particularly limited, and as described above, it is preferable that the shape of one of the balls having the diameter b is preferable. For example, in the case where the shape of one end of the jig 14 is polygonal, the portion of the jig 14 is attached to the test piece at an angular portion, and the test force is concentrated on the corner portion, and the test piece is easily torn on the way. As a result, in the test force-displacement amount chart, it is difficult to secure a region having a high linear relationship. Further, when the shape of one end of the jig 14 is a flat plate shape such as a flat plate shape, the end portion of the flat plate shape deforms the test piece at an acute angle, and it is difficult to obtain a high linear relationship. On the other hand, in the case where the shape of one end of the jig 14 is a shape having a portion corresponding to the ball, the effect of pushing the test piece into the face can be obtained. In detail, when the push-in jig 14 is pushed in, the test piece is smoothly stretched while forming an obtuse angle, and a higher linear relationship is easily obtained.
此外,直徑b在5mm~10mm為佳、在6mm~9mm為更佳、在7mm~8mm為特佳。直徑b過小時,變成以點加壓試驗片,試驗片容易快速破裂。另一方面,直徑b過大時,被測物支撐治具12亦需要增大,需要的樣品面積亦增大。 Further, the diameter b is preferably 5 mm to 10 mm, more preferably 6 mm to 9 mm, and particularly preferably 7 mm to 8 mm. When the diameter b is too small, the test piece is pressed at a point, and the test piece is easily broken quickly. On the other hand, when the diameter b is too large, the object supporting fixture 12 also needs to be enlarged, and the required sample area is also increased.
進一步,相對於開口17之直徑a之直徑b之比(直徑b/直徑a), 在0.3~0.9為佳、在0.4~0.8為更佳、在0.5~0.7為特佳。若相對於直徑a之直徑b之比在此種範圍時,易得到高的線性關係。 Further, the ratio of the diameter b of the diameter a of the opening 17 (diameter b / diameter a), It is preferably 0.3 to 0.9, more preferably 0.4 to 0.8, and particularly preferably 0.5 to 0.7. If the ratio of the diameter b to the diameter a is in such a range, a high linear relationship is easily obtained.
押入治具14之押入速度,在0.1mm/min~10.0mm/min為佳、在0.5mm/min~5.0mm/min為更佳、在1.0mm/min~2.0mm/min為特佳。若押入速度過慢時,則需要長時間的試驗。另一方面,押入速度過快時,則試驗片容易破膜,容易在無法充分確保高線性區域之狀態下破膜。 The pushing speed of the jig 14 is preferably from 0.1 mm/min to 10.0 mm/min, more preferably from 0.5 mm/min to 5.0 mm/min, and from 1.0 mm/min to 2.0 mm/ Min is especially good. If the pushing speed is too slow, it takes a long time to test. On the other hand, when the pushing speed is too fast, the test piece is likely to break the film, and it is easy to break the film in a state where the high linear region cannot be sufficiently ensured.
接著,為了更詳細說明本發明,說明實施例。 Next, the embodiments will be described in order to explain the present invention in more detail.
作為基層之導電性基材1,準備SUS基材。該導電性基材1,藉由電鍍法形成鎳鍍覆膜2。此時,電鍍浴,使用含有胺磺酸Ni600g/L、氯化Ni10g/L、硼酸40g/L、及負離子系界面活性劑(十二烷基苯磺酸鈉)10ml/L之水溶液。鍍覆浴之pH值為3.5,浴溫為60℃。電鍍係藉由脈衝電鍍進行。脈衝電鍍,以平均電流密度5.9A/dm2、比(ton/toff)為1.4之條件進行。接著,從導電性基材1剝離鎳鍍覆膜2。進一步,對鎳鍍覆膜2,大氣中,在500℃進行熱處理60分鐘,得到實施例1之鎳薄膜3。得到的鎳薄膜3之厚度為5μm。 As the conductive substrate 1 of the base layer, a SUS substrate was prepared. In the conductive substrate 1, a nickel plating film 2 is formed by an electroplating method. At this time, as the plating bath, an aqueous solution containing 600 g/L of amine sulfonic acid Ni, 10 g/L of chlorinated nitrogen, 40 g/L of boric acid, and 10 ml/L of an anionic surfactant (sodium dodecylbenzenesulfonate) was used. The plating bath had a pH of 3.5 and a bath temperature of 60 °C. Electroplating is performed by pulse plating. Pulse plating was carried out under the conditions of an average current density of 5.9 A/dm 2 and a ratio of (ton/toff) of 1.4. Next, the nickel plating film 2 is peeled off from the conductive substrate 1. Further, the nickel plating film 2 was heat-treated at 500 ° C for 60 minutes in the air to obtain a nickel thin film 3 of Example 1. The thickness of the obtained nickel thin film 3 was 5 μm.
使用跟實施例1相同之方法,得到實施例2之鎳薄膜3。但,熱處理時間為120分。 The nickel film 3 of Example 2 was obtained in the same manner as in Example 1. However, the heat treatment time was 120 minutes.
使用跟實施例1相同之方法,得到比較例1之鎳薄膜。但,不進行熱處理。 The nickel film of Comparative Example 1 was obtained in the same manner as in Example 1. However, no heat treatment is performed.
使用跟實施例1相同之方法,得到比較例2之鎳薄膜。但,不進行熱處理。此外,電解浴使用在水中溶解硫酸Ni350g/L、氯化Ni60g/L、及檸檬酸三鈉30g/L之溶液(不含界面活性劑)。鍍浴之pH值為4.6,浴溫為60℃。鍍覆條件為電流0.1A之一定條件下進行。 A nickel film of Comparative Example 2 was obtained in the same manner as in Example 1. However, no heat treatment is performed. Further, the electrolytic bath used a solution of dissolving sulfuric acid Ni 350 g/L, chlorinated Ni 60 g/L, and trisodium citrate 30 g/L in water (excluding a surfactant). The plating bath had a pH of 4.6 and a bath temperature of 60 °C. The plating conditions were carried out under the conditions of a current of 0.1 A.
比較例3之鎳薄膜,係準備以壓延法製造之厚度10μm之鎳薄膜。 The nickel film of Comparative Example 3 was prepared by a calendering method of a nickel film having a thickness of 10 μm.
比較例4之金屬膜,係準備以壓延法製造之厚度10μm之Cu薄膜。 The metal film of Comparative Example 4 was a Cu film having a thickness of 10 μm which was produced by a rolling method.
比較例5之金屬膜,係準備以壓延法製造之厚度10μm之Al薄膜。 The metal film of Comparative Example 5 was prepared by a calendering method of an Al film having a thickness of 10 μm.
相對於比較例2之鎳薄膜,施予跟實施例1同樣條件之熱處理,試圖得到比較例6之鎳薄膜。然而,熱處理後之比較例2之鎳薄膜,由於氧化進行變得脆弱,形狀不能維持。 The nickel film of Comparative Example 2 was subjected to heat treatment under the same conditions as in Example 1 in an attempt to obtain a nickel film of Comparative Example 6. However, the nickel film of Comparative Example 2 after the heat treatment became weak due to oxidation, and the shape could not be maintained.
接著,評價藉由實施例1~2及比較例1~5所得到之鎳薄膜或金屬箔之柔軟度。具體而言,使用圖2至6中說明之評價裝置10,測定試驗力及變位量之關係。 Next, the softness of the nickel film or the metal foil obtained by Examples 1 to 2 and Comparative Examples 1 to 5 was evaluated. Specifically, the relationship between the test force and the displacement amount was measured using the evaluation device 10 described in FIGS. 2 to 6.
詳細而言,試驗片切成直徑20mm之圓形。接著,使用開口17及 凹部16之直徑為12mm之一對挾持部材(12-1及12-2)挾持試驗片,並固定台座11。此外,押入治具14,係準備一端具有對應直徑7mm之球之一部分之形狀之治具,並安裝於押入治具支撐部13。藉由使押入治具支撐部13以1mm/min之速度向一對的挾持部材12側移動,從開口17之中心使押入治具14之一端接觸試驗片。進一步,押入治具14押入直到穿破試驗片,藉由測定裝置18測定押入治具14之變位量與試驗力(押入治具14所受的力)之關係。 Specifically, the test piece was cut into a circle having a diameter of 20 mm. Next, use the opening 17 and The recessed portion 16 has a diameter of 12 mm, holds the test piece against the holding members (12-1 and 12-2), and fixes the pedestal 11. Further, the jig 14 is inserted into a jig having a shape corresponding to one of the balls having a diameter of 7 mm at one end, and is attached to the jig support portion 13. By pushing the jig support portion 13 toward the pair of grip members 12 at a speed of 1 mm/min, one end of the jig 14 is brought into contact with the test piece from the center of the opening 17. Further, the jig 14 is pushed in until the test piece is pierced, and the relationship between the amount of displacement of the jig 14 and the test force (the force applied to the jig 14) is measured by the measuring device 18.
圖7,係表示測定結果之圖表。圖7中,各線跟實施例1~2及比較例1~5之對應關係如以下。 Fig. 7 is a graph showing the results of the measurement. In Fig. 7, the correspondence between the respective lines and the first to second embodiments and the comparative examples 1 to 5 is as follows.
實施例1:線「1」 Example 1: Line "1"
實施例2:線「2」 Example 2: Line "2"
比較例1:線「3」 Comparative Example 1: Line "3"
比較例2:線「4」 Comparative Example 2: Line "4"
比較例3:線「5」 Comparative Example 3: Line "5"
比較例4:線「6」 Comparative Example 4: Line "6"
比較例5:線「7」 Comparative Example 5: Line "7"
圖7之各圖表中,試驗力急遽降低之部分,係對應穿破試驗片之點(以下,稱作破斷點)。實施例1~2及比較例1~5之任一者中,從原點至破斷點之區域,可得到線性高之變位量與試驗力之關係。此者表示本發明之評價方法適切地反映試驗片之柔軟度。 In each of the graphs of Fig. 7, the portion where the test force is drastically reduced corresponds to the point at which the test piece is broken (hereinafter referred to as a breaking point). In any of Examples 1 to 2 and Comparative Examples 1 to 5, the relationship between the linearly high displacement amount and the test force was obtained from the origin to the break point region. This indicates that the evaluation method of the present invention appropriately reflects the softness of the test piece.
如圖7所示,實施例1及2之鎳薄膜3,比起比較例1~5之鎳薄膜或金屬箔,試驗片破斷前之變位量大。進一步,實施例1及2,比起比較 例1~5,由原點、破斷點、及對應破斷點之X軸上之點所包圍區域之面積,即對於伸長之作用量較大。此者表示實施例1及2,比起比較例1~5容易伸長且柔軟,具有高的機械強度。 As shown in Fig. 7, in the nickel film 3 of Examples 1 and 2, the amount of displacement of the test piece before breaking was larger than that of the nickel film or the metal foil of Comparative Examples 1 to 5. Further, Examples 1 and 2 are compared compared In Examples 1 to 5, the area surrounded by the origin, the breaking point, and the point on the X-axis corresponding to the breaking point, that is, the amount of action on the elongation is large. This shows that Examples 1 and 2 are easily stretched and softer than Comparative Examples 1 to 5, and have high mechanical strength.
圖8,係表示「柔軟值」之計算結果之圖表。又,「柔軟值」於圖7所示之圖表中,求得線性良好之範圍(線形近似之相關係數R2>0.9),藉由求得該斜率而計算。如圖8所示,實施例1及2,比起比較例1及2之「柔軟值」較小。亦即,可理解為使用含有界面活性劑之鍍浴進行電鍍,並藉由熱處理除去界面活性劑,可得到容易伸長且柔軟之鎳薄膜3。此外,可理解為實施例1及2之鎳薄膜3,比起比較例3及4之金屬膜之柔軟值較小,比起藉由壓延法得到之鎳薄膜及Cu膜,更容易伸長且柔軟。 Fig. 8 is a graph showing the calculation result of "soft value". Further, in the graph shown in Fig. 7, the "soft value" is obtained by finding a range in which the linearity is good (the correlation coefficient R 2 of the linear approximation is 0.9), and the slope is calculated. As shown in Fig. 8, in Examples 1 and 2, the "softness value" was smaller than that of Comparative Examples 1 and 2. That is, it can be understood that the nickel film 3 which is easy to elongate and soft can be obtained by electroplating using a plating bath containing a surfactant and removing the surfactant by heat treatment. Further, it can be understood that the nickel film 3 of Examples 1 and 2 has a smaller softness value than the metal films of Comparative Examples 3 and 4, and is more easily elongated and softer than the nickel film and the Cu film obtained by the calendering method. .
進一步,實施例1及2之柔軟值比起比較例5較大,如圖7所示,比較例5比起實施例1及2以極少的變位量穿破試驗片。亦即,可理解實施例1及2之鎳薄膜3,比起藉由壓延法得到之Al膜,有極佳優良的機械強度。 Further, the soft values of Examples 1 and 2 were larger than those of Comparative Example 5. As shown in Fig. 7, Comparative Example 5 pierced the test piece with a minimum amount of displacement compared with Examples 1 and 2. That is, it can be understood that the nickel thin film 3 of Examples 1 and 2 has excellent mechanical strength superior to that of the Al film obtained by the calendering method.
此外,相對於比較例6之鎳鍍覆膜,在施予熱處理後無法維持形狀,實施例1及2,藉由施予熱處理,除了能維持形狀,更提升柔軟度。從此者而言,實施例1及2之結果可說是無法預期之結果。 Further, the nickel plating film of Comparative Example 6 could not maintain its shape after the heat treatment, and in Examples 1 and 2, the heat treatment was carried out, in addition to maintaining the shape and improving the softness. From this point of view, the results of Examples 1 and 2 can be said to be unpredictable results.
3‧‧‧鎳薄膜 3‧‧‧ Nickel film
4‧‧‧空孔 4‧‧‧ holes
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| US11187872B2 (en) | 2017-07-06 | 2021-11-30 | Hamamatsu Photonics K.K. | Optical device |
| TWI782053B (en) * | 2017-07-06 | 2022-11-01 | 日商濱松赫德尼古斯股份有限公司 | Optical device |
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| US11693230B2 (en) | 2017-11-15 | 2023-07-04 | Hamamatsu Photonics K.K. | Optical device |
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| US12180063B2 (en) | 2017-07-06 | 2024-12-31 | Hamamatsu Photonics K.K. | Optical device and method for manufacturing same |
| TWI782053B (en) * | 2017-07-06 | 2022-11-01 | 日商濱松赫德尼古斯股份有限公司 | Optical device |
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| Publication number | Publication date |
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| EP3296432A1 (en) | 2018-03-21 |
| TWI617672B (en) | 2018-03-11 |
| EP3296432A4 (en) | 2018-12-19 |
| US20180230615A1 (en) | 2018-08-16 |
| WO2017078069A1 (en) | 2017-05-11 |
| JP2017088940A (en) | 2017-05-25 |
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| CN107614756A (en) | 2018-01-19 |
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