TW201729332A - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
TW201729332A
TW201729332A TW105124488A TW105124488A TW201729332A TW 201729332 A TW201729332 A TW 201729332A TW 105124488 A TW105124488 A TW 105124488A TW 105124488 A TW105124488 A TW 105124488A TW 201729332 A TW201729332 A TW 201729332A
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Taiwan
Prior art keywords
substrate
substrate carrier
substrate holder
processing apparatus
tempering device
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TW105124488A
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Chinese (zh)
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塞巴斯汀 瑞斯克
艾瑞克 安索治
莫高 柯爾
克里斯汀 鮑恩
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梅耶博格(德國)公司
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
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    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
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Abstract

本發明係涉及藉由使用板狀基板托架和被安排平行於該基板托架之至少一板狀回火裝置處理基板之基板處理設備,其中該基板托架包含用於支撐至少一層狀基板的基板托架前側和面對該回火裝置的基板托架背側。因而本發明之目的係提出能使得在該基板托架中的熱分佈盡可能地均勻的基板處理設備。根據本發明,其目的可藉由提供用於形成一距離在該基板托架和該回火裝置之間的至少一間隔元件於該基板托架背側和/或面對該基板托架之該回火裝置的表面上來達成。The present invention relates to a substrate processing apparatus for processing a substrate by using a plate substrate holder and at least one plate tempering device arranged parallel to the substrate holder, wherein the substrate holder includes at least one layer substrate for supporting The front side of the substrate holder and the back side of the substrate holder facing the tempering device. It is therefore an object of the present invention to provide a substrate processing apparatus that enables the heat distribution in the substrate carrier to be as uniform as possible. According to the present invention, it is an object of the present invention to provide a spacer element for forming a distance between the substrate holder and the tempering device on the back side of the substrate holder and/or facing the substrate holder The surface of the tempering device is achieved.

Description

基板處理裝置 Substrate processing device

本發明係涉及藉由板狀基板托架和被安排平行於該基板托架之至少一板狀回火裝置處理基板之基板處理設備,其中該基板托架包含用於支撐至少一層狀基板的基板托架前側和面對該回火裝置的基板托架背側。 The present invention relates to a substrate processing apparatus for processing a substrate by a plate substrate holder and at least one plate tempering device arranged parallel to the substrate holder, wherein the substrate holder includes at least one layer substrate for supporting The front side of the substrate holder and the back side of the substrate holder facing the tempering device.

該基板處理設備從例如文獻DE 10 2010 000 001 A1係為熟知的。在其中,諸如矽晶圓之層狀半導體基板通過處理腔室被移動到板狀基板托架,以為了在半導體基板上沈積例如鈍化層。為此目的,半導體基板被放置在基板托架之前側,然而至少一板狀加熱和/或冷卻裝置被安排面對基板托架之背側。 The substrate processing apparatus is known, for example, from the document DE 10 2010 000 001 A1. Therein, a layered semiconductor substrate such as a germanium wafer is moved through a processing chamber to a plate substrate carrier for deposition of, for example, a passivation layer on the semiconductor substrate. For this purpose, the semiconductor substrate is placed on the front side of the substrate carrier, however at least one plate-like heating and/or cooling device is arranged to face the back side of the substrate carrier.

對於該基板處理設備,在基板托架與加熱和/或冷卻裝置之間通常有直接、層狀接觸,其可例如係為加熱板。然而實際上,此層狀接觸從未理想地覆蓋整個表面,但因為實際上在基板托架與加熱板之表面之內的不規則性,導致通常不能精確地決定、不均勻而非層狀應用。因此,在 加熱裝置的情況中,基板托架之加熱和從而重疊基板之加熱通常集中在個別區域上。此導致在基板托架之內非均質、不均勻熱分佈,從而扭曲和張力可在基板托架中形成,使得其可自己變形。此外,在基板托架之內的不均勻熱分佈導致被提供在基板托架前側之至少一基板的不均勻回火。 For the substrate processing apparatus, there is typically a direct, layered contact between the substrate carrier and the heating and/or cooling device, which may for example be a heating plate. In practice, however, this layered contact never covers the entire surface undesirably, but because of the irregularities within the surface of the substrate carrier and the heating plate, it is often impossible to accurately determine, unevenly, rather than layered applications. . Thus, in In the case of a heating device, the heating of the substrate carrier and thus the heating of the overlapping substrates is typically concentrated on individual regions. This results in a non-homogeneous, uneven heat distribution within the substrate carrier such that distortion and tension can be formed in the substrate carrier such that it can deform itself. Moreover, uneven heat distribution within the substrate carrier results in uneven tempering of at least one substrate provided on the front side of the substrate carrier.

因而,本發明之目的係提出使得在該基板托架之內的熱分佈盡可能地均勻的基板處理設備。 Accordingly, it is an object of the present invention to provide a substrate processing apparatus that makes the heat distribution within the substrate carrier as uniform as possible.

藉由在該基板托架背側和/或面對該基板托架之該回火裝置的一表面上提供至少一間隔元件,以為了形成該基板托架和該回火裝置之間的距離,根據本發明目的被達成。 Providing at least one spacer element on a surface of the back side of the substrate holder and/or the tempering device facing the substrate holder, in order to form a distance between the substrate holder and the tempering device, It is achieved according to the object of the invention.

因而,根據本發明,至少一間隔元件,即間隔物,在基板托架和回火裝置之間被提供,如此避免基板托架和回火裝置之間的直接接觸。如此一來,可避免在基板托架之內的點狀過熱點,也就是所謂的熱點,基板托架與回火裝置之間的距離的非均質性,其可藉由例如加工容限被導致,可以藉由至少一間隔元件被補償。例如,可提供數個間隔元件的圖案,其可精確地補償其發生位置中的非均質性。透過此,建立基板托架與回火裝置之間盡可能均質的均勻距離。而且,關於間隔元件的厚度,從基板托架之厚度方向中的加工容限、至少一間隔元件的厚度容限以及至 少一間隔元件的安裝容限到基板托架和/或基板托架之厚度方向中的回火裝置之總和係為相對地小。此總和數目較佳為小於間隔元件之厚度的10%,小於5%特別為較佳。如此,與現有技術不同,基板托架之加熱行為不再顯著地受到基板托架與間隔元件之該本地容限影響,但加熱行為通過至少一間隔元件的厚度係為可特別地調節。 Thus, in accordance with the present invention, at least one spacer element, i.e., a spacer, is provided between the substrate carrier and the tempering device, thus avoiding direct contact between the substrate carrier and the tempering device. In this way, the point-like hot spots within the substrate carrier, that is, the so-called hot spots, the heterogeneity of the distance between the substrate holder and the tempering device can be avoided, which can be caused by, for example, processing tolerances. Can be compensated by at least one spacer element. For example, a pattern of several spacer elements can be provided that accurately compensate for the heterogeneity in its location of occurrence. Through this, a uniform uniform distance between the substrate holder and the tempering device is established. Moreover, with respect to the thickness of the spacer element, the processing tolerance in the thickness direction of the substrate holder, the thickness tolerance of at least one spacer element, and The mounting tolerance of one less spacer element to the sum of the tempering means in the thickness direction of the substrate carrier and/or the substrate carrier is relatively small. The sum number is preferably less than 10% of the thickness of the spacer member, and less than 5% is particularly preferred. As such, unlike the prior art, the heating behavior of the substrate carrier is no longer significantly affected by the local tolerance of the substrate carrier and spacer elements, but the heating behavior is specifically adjustable by the thickness of the at least one spacer element.

根據周圍介質,回火裝置與基板托架之間的熱傳輸可因而基本上通過熱對流或熱輻射發生,在一定程度上也通過至少一間隔元件通過熱傳導發生。此保證到基板托架的均勻熱輸入,從而基板托架之內的均質熱分佈可以被實現。如此,基板托架的扭曲與被放置在基板上之基板的不均勻回火可以被避免。 Depending on the surrounding medium, the heat transfer between the tempering device and the substrate carrier can thus take place essentially by thermal convection or thermal radiation, and to some extent also by heat conduction by at least one spacer element. This ensures uniform heat input to the substrate carrier so that a homogeneous heat distribution within the substrate carrier can be achieved. As such, the distortion of the substrate carrier and the uneven tempering of the substrate placed on the substrate can be avoided.

而且,基板托架與回火裝置之間的熱傳遞被節流。因此,在加熱過程的情況下,基板托架之加熱被延遲,特別是當放置基板托架在加熱板上時,熱震可藉由間隔元件被避免。 Moreover, heat transfer between the substrate holder and the tempering device is throttled. Therefore, in the case of the heating process, the heating of the substrate holder is delayed, particularly when the substrate holder is placed on the heating plate, thermal shock can be avoided by the spacer elements.

根據本發明間隔元件可包含數個幾何圖形。例如,間隔元件可被形成在如圓形、圓形環、多邊形或其係為內部中空之多邊形的截面中。而且,間隔元件可包含凹部和/或通孔,使得間隔元件盡可能地少存在基板托架與回火裝置之間的位置,且不會超過必要的影響回火裝置和基板托架之間的熱傳導。較佳地,至少一間隔元件包含從1mm到50mm(較佳地,從5mm到35mm)的寬度和/或長度,在平行於基板托架背側之延伸方向中從15mm到25 mm特別為較佳。寬度和/或長度從而涉及間隔元件之連續區域,如此可以、特別是藉由間隔元件中的間隙或藉由彎曲邊緣被限制。 The spacer element according to the invention may comprise several geometric figures. For example, the spacer elements can be formed in a cross-section such as a circle, a circular ring, a polygon, or a polygon that is hollow inside. Moreover, the spacer element can comprise a recess and/or a through hole such that the spacer element is as small as possible between the substrate carrier and the tempering device and does not exceed the necessary influence between the tempering device and the substrate carrier. Heat Conduction. Preferably, the at least one spacer element comprises a width and/or length of from 1 mm to 50 mm (preferably from 5 mm to 35 mm) from 15 mm to 25 in a direction parallel to the back side of the substrate carrier. Mm is particularly preferred. The width and/or length thus relate to a continuous area of the spacer element, which can be limited, in particular by a gap in the spacer element or by a curved edge.

至少一間隔元件可以被安排在基板托架背側以及面向基板托架的回火裝置之側的表面兩者。例如,至少一間隔元件可以被包括在基板托架背側之表面和/或面向基板托架的回火裝置之側的表面中,這意味著一體式實施例的形式。或者至少一間隔元件可以被栓到基板托架背側和/或面向基板托架的回火裝置之側,或可以以其他方式與一該表面緊密連接。有利的是形成基板托架與間隔元件之間可拆卸的連接,從而至少一間隔元件係為可互換。在其中應用至少一間隔元件自由地移動在基板托架背側和/或面向基板托架的回火裝置之側的表面上的實施例也係為可能。例如,一或數個間隔襯墊可以被應用作為間隔元件。 At least one spacer element may be arranged on both the back side of the substrate carrier and the surface facing the side of the tempering device of the substrate carrier. For example, at least one spacer element may be included in the surface of the back side of the substrate carrier and/or the surface facing the side of the tempering device of the substrate carrier, which means the form of an integrated embodiment. Or at least one spacer element can be bolted to the back side of the substrate carrier and/or to the side of the tempering device facing the substrate carrier, or can be otherwise tightly coupled to a surface. It is advantageous to form a detachable connection between the substrate holder and the spacer element such that at least one spacer element is interchangeable. Embodiments in which at least one spacer element is free to move on the surface of the back side of the substrate carrier and/or the side of the tempering device facing the substrate carrier are also possible. For example, one or more spacer pads can be applied as spacer elements.

在根據本發明之基板處理設備之特別較佳實施例中,多個間隔元件被提供,用以形成基板托架和回火裝置之間的距離。如此,許多小間隔元件存在於基板托架和回火裝置之間,從而基板托架和回火裝置之間的距離可以保持與基板托架之中心區域一樣大,特別是在基板托架的外部區域。間隔元件之高度較佳係為均勻,其從基板托架背側和/或面向基板托架的回火裝置的側突出;然而,其也可以具有不同高度,以為了平衡非均質性。藉由使用多個間隔元件,基板托架到回火裝置的熱連接可以被特別均勻地形成。 In a particularly preferred embodiment of the substrate processing apparatus according to the present invention, a plurality of spacer elements are provided for forming a distance between the substrate holder and the tempering means. As such, a plurality of small spacer elements are present between the substrate carrier and the tempering device such that the distance between the substrate carrier and the tempering device can remain as large as the central region of the substrate carrier, particularly outside the substrate carrier region. The height of the spacer elements is preferably uniform, which protrudes from the back side of the substrate carrier and/or the side of the tempering device facing the substrate carrier; however, it may also have different heights in order to balance the heterogeneity. By using a plurality of spacer elements, the thermal connection of the substrate carrier to the tempering device can be formed particularly uniformly.

在根據本發明之基板處理設備的有利實施例中,提供至少一間隔元件之該材料包含較該基板托架之該材料低的熱傳導性。如此,回火裝置和基板托架之間通過至少一間隔元件的熱傳導可以被保持低,且如此基板托架和/或基板的局部加熱可以大部分地被防止。在此情況中,例如,基板托架之加熱發生在當基板之處理發生在存在回火裝置和基板托架之間的氣體之下時,且主要經由氣墊。因此,回火裝置和基板托架之間的熱傳導可以經由對流進行,其導致均勻溫暖分佈。 In an advantageous embodiment of the substrate processing apparatus according to the invention, the material providing at least one spacer element comprises a lower thermal conductivity than the material of the substrate holder. As such, heat transfer between the tempering device and the substrate carrier by at least one spacer element can be kept low, and thus local heating of the substrate carrier and/or substrate can be largely prevented. In this case, for example, heating of the substrate carrier occurs when the processing of the substrate occurs under the presence of gas between the tempering device and the substrate carrier, and primarily via the air cushion. Thus, heat transfer between the tempering device and the substrate carrier can be via convection, which results in a uniform warm distribution.

例如,間隔元件可以從至少一電絕緣材料被形成和/或以至少一電絕緣材料被塗覆。電絕緣材料最大部分的特徵在於熱傳導性。在此情況中,陶瓷、玻璃和/或諸如聚醚醚酮、鐵氟龍、聚醯亞胺、和/或聚矽氧的合成材料可以被考慮作為間隔元件之材料。在本發明中,通常也可至少部分地從鋁、另一金屬材料或碳形成至少一間隔元件。 For example, the spacer element can be formed from at least one electrically insulating material and/or coated with at least one electrically insulating material. The largest part of the electrically insulating material is characterized by thermal conductivity. In this case, ceramic, glass and/or synthetic materials such as polyetheretherketone, Teflon, polyimine, and/or polyfluorene can be considered as the material of the spacer element. In the present invention, at least one spacer element can also be formed at least partially from aluminum, another metal material or carbon.

間隔元件可以較佳地被形成為網狀物或海綿狀式樣,以為了進行回火裝置與基板托架之間的低熱傳導。或者,間隔元件或其部分可以被形成為網、矩陣和/或襯墊。間隔元件可以被形成為覆蓋回火裝置和基板托架之間的整個表面或個別部分。例如,使用由玻璃棉或聚矽氧製成的襯墊作為間隔元件係為可能。該襯墊通常係為可撓和/或可壓縮,如此基板托架和回火裝置之間的距離的非均質可以通過間隔元件的可壓縮性被補償。 The spacer element can preferably be formed in a mesh or sponge-like pattern for low heat transfer between the tempering device and the substrate carrier. Alternatively, the spacer elements or portions thereof may be formed as a mesh, matrix, and/or pad. The spacer element can be formed to cover the entire surface or individual portions between the tempering device and the substrate carrier. For example, it is possible to use a gasket made of glass wool or polyfluorene as a spacer element. The liner is typically flexible and/or compressible such that the non-uniformity of the distance between the substrate carrier and the tempering device can be compensated for by the compressibility of the spacer element.

根據本發明之基板處理設備的較佳開發,至少間隔元 件突出基板托架和/或回火裝置0.1mm和1mm之間的高度,特別較佳的在0.2mm和0.5mm、尤其是0.3mm和0.4mm之間的高度。如此,回火裝置和基板托架之間足夠和最小的距離被形成,使得在氣體中對流之情況下的熱傳遞有效率地且均勻地發生。同時,例如在真空中的此距離導致不同回火裝置之間的基板托架之溫度的保持,這是因為由於熱傳導的熱損失被最小化,且僅由於熱輻射的微小熱損失可以發生。 A preferred development of the substrate processing apparatus according to the present invention, at least spacer The height of the substrate bracket and/or tempering device between 0.1 mm and 1 mm is particularly preferably between 0.2 mm and 0.5 mm, in particular between 0.3 mm and 0.4 mm. As such, a sufficient and minimal distance between the tempering device and the substrate carrier is formed such that heat transfer in the event of convection in the gas occurs efficiently and uniformly. At the same time, this distance, for example in a vacuum, leads to the maintenance of the temperature of the substrate carrier between the different tempering devices, since the heat loss due to heat conduction is minimized and can only occur due to the small heat loss of the heat radiation.

在根據本發明之基板處理設備的較佳實施例中,至少一間隔元件包含可變高度。間隔元件如此可以被形成例如可伸縮和可延伸像望遠鏡的式樣。而且,間隔元件可以從回火裝置和/或基板托架背側被形成和/被固定為可延伸和/或高度可調整。回火裝置可以包含例如至少一孔或鑽孔,從其間隔元件可以被延伸和在其中間隔元件可以被降低。如此一來,可首先通過至少一間隔元件應用基板托架在遠離回火裝置的地方,例如1mm的距離,從而基板托架之受限制的回火在第一情況中發生。隨後,至少一間隔元件的高度可以被降低,例如降低到約0.3mm,從而由於在其之後更短的距離,回火裝置和基板托架之間的熱傳遞更有效率地發生。如此,震盪回火首先被防止,且有效率的熱傳遞隨後被確保。 In a preferred embodiment of the substrate processing apparatus according to the present invention, the at least one spacer element comprises a variable height. The spacer elements can thus be formed, for example, in a style that is telescopic and extendable like a telescope. Moreover, the spacer elements can be formed and/or fixed from the tempering device and/or the back side of the substrate carrier to be extendable and/or height adjustable. The tempering device may comprise, for example, at least one hole or bore, from which the spacer element may be extended and in which the spacer element may be lowered. In this way, the substrate carrier can be first applied by means of at least one spacer element away from the tempering device, for example a distance of 1 mm, so that a limited tempering of the substrate carrier takes place in the first case. Subsequently, the height of the at least one spacer element can be lowered, for example to about 0.3 mm, so that heat transfer between the tempering device and the substrate carrier occurs more efficiently due to the shorter distance thereafter. In this way, the oscillating temper is first prevented, and efficient heat transfer is subsequently ensured.

而且,有利的是若基板托架由至少一導電性材料被形成,和/或以至少一導電性材料被塗覆。由於導電性材料的最佳熱傳導性,回火裝置的溫度可以藉此有利地被傳遞 到基板托架。而且,基板托架的導電性支持基板托架之內的均質熱分佈,從而基板托架中潛在發生的過熱點可以自行熱平衡;如此基板托架的張力和變形可以被避免。 Moreover, it is advantageous if the substrate carrier is formed from at least one electrically conductive material and/or is coated with at least one electrically conductive material. Due to the optimal thermal conductivity of the electrically conductive material, the temperature of the tempering device can advantageously be transferred thereby To the substrate carrier. Moreover, the conductivity of the substrate carrier supports a homogeneous heat distribution within the substrate carrier such that potentially hot spots in the substrate carrier can be thermally balanced by themselves; such tension and deformation of the substrate carrier can be avoided.

此外,基板處理設備中以導電體為形式的基板托架可以被使用作為例如電極。若要被處理之至少一基板應該被調整為特定電位特別為佳。作為材料,例如金屬或組成物,特別是鋁、鈦或該些金屬的組成物可以被考慮。 Further, a substrate holder in the form of an electric conductor in the substrate processing apparatus can be used as, for example, an electrode. It is particularly preferable that at least one of the substrates to be processed be adjusted to a specific potential. As materials, for example metals or compositions, in particular aluminum, titanium or compositions of these metals can be considered.

適當的是選擇盡可能高的基板托架前側和基板托架背側之間的基板托架的厚度,以為了避免基板托架由於溫度分均質性的隆起。一方面,基板托架的剛性因此被增加,藉由其基板托架可以熱阻抗,其包括較低厚度更好的張力。另一方面,基板托架中的熱分佈從而被改善和被加速,其也抵制基板托架之隆起。然而,因為增加的基板托架厚度負面地影響基板托架上之加熱和/或冷卻過程的動態,基板托架之厚度應該不超過最大厚度,因為基板托架的熱質量也隨著增加的厚度而增加。藉由使用基板托架和回火裝置之間的至少一間隔元件溫度非均質性和從而降低的機械張力可以被減少,且厚度-以及因此基板的質量和熱質量-托架可以被保持在最小值。基板托架的厚度如此與間隔元件的高度相互作用;間隔元件越高,可計算之基板托架的厚度越小。基板托架之最小質量還可以使實現小規模傳輸基板托架之可能的傳輸機構為可能。 It is appropriate to select the thickness of the substrate holder between the front side of the substrate holder and the back side of the substrate holder as high as possible in order to avoid bulging of the substrate holder due to temperature homogenization. On the one hand, the rigidity of the substrate holder is thus increased, since its substrate holder can be thermally resistive, which includes a lower thickness and better tension. On the other hand, the heat distribution in the substrate carrier is thus improved and accelerated, which also resists the bulging of the substrate carrier. However, because the increased substrate carrier thickness negatively affects the dynamics of the heating and/or cooling process on the substrate carrier, the thickness of the substrate carrier should not exceed the maximum thickness because the thermal mass of the substrate carrier also increases with thickness And increase. The temperature heterogeneity and thus the reduced mechanical tension can be reduced by using at least one spacer element between the substrate carrier and the tempering device, and the thickness - and thus the mass and thermal mass of the substrate - can be kept to a minimum value. The thickness of the substrate carrier thus interacts with the height of the spacer element; the higher the spacer element, the smaller the thickness of the substrate carrier that can be calculated. The minimum mass of the substrate carrier also makes it possible to implement a small transmission substrate possible transport mechanism.

已經證明係為有利的若基板托架包含8mm和21mm之間的厚度,較佳為10mm和15mm之間,特別較佳的 為基板拖架前側和基板托架背側之間在11mm和13mm之間。在120cm和200cm之間的基板托架的寬度如此導致約0.4%至1.8%的厚度和寬度的長寬比。關於不同長度和寬度之基板托架,可發生其他有利的基板托架之厚度。 It has proven to be advantageous if the substrate carrier comprises a thickness between 8 mm and 21 mm, preferably between 10 mm and 15 mm, particularly preferably It is between 11 mm and 13 mm between the front side of the substrate tray and the back side of the substrate holder. The width of the substrate carrier between 120 cm and 200 cm thus results in an aspect ratio of thickness and width of about 0.4% to 1.8%. With regard to substrate holders of different lengths and widths, other advantageous substrate holder thicknesses can occur.

在根據本發明之基板處理設備之特別較佳實施例中,該基板托架背側包含表面修正和/或表面塗層,其中該表面修正和/或該表面塗層較該基板托架之基本材料吸收更多熱輻射。若回火裝置和基板托架之間的熱傳遞主要通過熱輻射發生,此係為特別有利。若基板托架或其表面係由例如鋁的金屬、或金屬組成物形成,大部分的熱輻射被反射,且不發生回火裝置和基板托架之間有效的熱傳遞。然而,若基板托架背側之表面係作用為熱輻射可以被良好吸收,通過熱輻射之有效熱傳遞係為可能,其對於在真空中的過程特別地重要。 In a particularly preferred embodiment of the substrate processing apparatus according to the present invention, the back side of the substrate carrier includes a surface modification and/or surface coating, wherein the surface modification and/or the surface coating is substantially the same as the substrate carrier The material absorbs more heat radiation. This is particularly advantageous if the heat transfer between the tempering device and the substrate carrier occurs primarily by thermal radiation. If the substrate holder or its surface is formed of a metal such as aluminum or a metal composition, most of the heat radiation is reflected, and efficient heat transfer between the tempering device and the substrate holder does not occur. However, if the surface of the back side of the substrate carrier acts as heat radiation, it can be well absorbed, and an effective heat transfer by heat radiation is possible, which is particularly important for the process in vacuum.

或者其也可提供具有表面塗層和/或表面修正的基板托架,其發射較基板托架之基本材料少的熱輻射。通過此,由於熱輻射之基板托架的熱損可以被最小化。例如已被證明的是形成作為拋光鋁表面之基板托架前側係為有利的,其包含相對於黑色輻射體或小於0.2之吸收能級的發射度,而基板托架背側可以係為覆蓋黑色的鋁表面,在特殊情況中的例子是陽極化鋁表面。如此,基板托架背側可以包含顯著大於0.5,特別較佳係大於0.9的發射度或吸收能級。如此基板托架背側可以有效地吸收回火裝置發射 的熱輻射,而基板托架前側盡可能發射少的熱輻射。 Alternatively, it may also provide a substrate carrier having a surface coating and/or surface modification that emits less heat radiation than the base material of the substrate carrier. By this, the heat loss of the substrate holder due to heat radiation can be minimized. For example, it has proven to be advantageous to form the front side of the substrate carrier as a polished aluminum surface comprising an emissivity relative to a black radiator or an absorption level of less than 0.2, while the back side of the substrate carrier can be covered with black. An example of an aluminum surface, in special cases, is an anodized aluminum surface. As such, the back side of the substrate carrier can comprise an emissive or absorption level that is significantly greater than 0.5, particularly preferably greater than 0.9. Thus, the back side of the substrate holder can effectively absorb the tempering device to emit The thermal radiation, while the front side of the substrate carrier emits as little heat radiation as possible.

至少一用於包括正軌的插座模組在基板托架上被提供係為較佳。如此,基板處理設備之內的至少一方向中的基板托架係為可滑動和/或可移動。例如,藉由以基板連續地移動被處理獲通過基板處理腔室處理之基板托架,此使實現基板處理設備之操作的連續模式。插座模組被安排在基板接觸區域外側,這意味著在基板托架背側和/或在基板托架的至少一側。而且,插座模組可以在不同位置上被提供,例如插座模組可以在基板托架之至少一橫向外部區域上和/或在基板托架背側上的中心區域中被提供。 It is preferred that at least one of the socket modules for including the positive rails be provided on the substrate carrier. As such, the substrate carrier in at least one direction within the substrate processing apparatus is slidable and/or movable. For example, by continuously moving the substrate carrier processed through the substrate processing chamber with the substrate, this enables a continuous mode of operation of the substrate processing apparatus. The socket module is arranged outside the substrate contact area, which means on the back side of the substrate carrier and/or on at least one side of the substrate carrier. Moreover, the socket module can be provided at different locations, for example, the socket module can be provided in at least one lateral outer region of the substrate carrier and/or in a central region on the back side of the substrate carrier.

已經證明係為特別有利的是,若至少一插座模組藉由至少一連接元件被連接到基板托架,其中連接元件包含較在基板托架和插座模組之間一連接方向的插座模組更小的截面和/或更大的長度。藉由選擇在一連接方向具有小截面的連接模組,基板托架和插座模組之間的熱傳遞特別地按幾何級數地被減少。如此,在至少一插座模組之位置上的散熱體的形成可以被最小化,其依次防止基板托架中的不均勻熱分佈。 It has proven to be particularly advantageous if at least one of the socket modules is connected to the substrate carrier by at least one connecting element, wherein the connecting element comprises a socket module in a direction of connection between the substrate carrier and the socket module Smaller sections and / or larger lengths. By selecting a connection module having a small cross-section in a connecting direction, the heat transfer between the substrate carrier and the socket module is reduced in particular geometrically. As such, the formation of the heat sink at the location of the at least one socket module can be minimized, which in turn prevents uneven heat distribution in the substrate carrier.

在根據本發明之基板處理設備之同樣合適的實施例中,該至少一插座模組和/或該連接元件係由包含較該基板托架之該材料低的熱傳導性之材料或材料化合物所組成。藉由此,基板托架和插座模組之間的熱傳遞也有效地被減少,其導致盡可能均勻的熱分佈。如此,對於基板托架和至少一插座模組以及/或至少一連接元件,不同材料 被提供,從而基板托架和至少一插座模組以及/或至少一連接元件之不同熱膨脹或收縮可已在冷卻或加熱期間發生。其原因係為基板托架的不同溫度兩者,插座模組和連接元件以及具有不同的基板托架、插座模組以及連接元件的選擇材料的不同熱膨脹係數。因而,通常將插座模組機械地從基板托架去耦合已被證明係為有利。這意味著被放置在基板托架和插座模組之間的連接元件,其平衡基板托架、連接元件本身以及插座模組之不同的熱膨脹。例如,至少一插座模組被形成正軌的形狀,基板托架可以藉由至少一可移動連接元件的方法從正軌被去耦合。 In an equally suitable embodiment of the substrate processing apparatus according to the present invention, the at least one socket module and/or the connection element is comprised of a material or material compound comprising a lower thermal conductivity than the material of the substrate carrier. . Thereby, the heat transfer between the substrate carrier and the socket module is also effectively reduced, which results in as uniform a heat distribution as possible. Thus, for the substrate carrier and the at least one socket module and/or the at least one connecting component, different materials Provided such that different thermal expansion or contraction of the substrate carrier and the at least one socket module and/or the at least one connecting element may have occurred during cooling or heating. The reason for this is the different thermal expansion coefficients of the substrate holder at different temperatures, the socket module and the connection elements, and the selection materials having different substrate holders, socket modules, and connection elements. Thus, it has proven to be advantageous to mechanically decouple the socket module from the substrate carrier. This means a connection element placed between the substrate carrier and the socket module that balances the different thermal expansion of the substrate carrier, the connection element itself, and the socket module. For example, at least one of the socket modules is shaped like a positive rail, and the substrate carrier can be decoupled from the positive rail by at least one method of moving the connecting elements.

1‧‧‧基板托架 1‧‧‧Substrate bracket

2‧‧‧回火裝置 2‧‧‧tempering device

3‧‧‧基板托架前側 3‧‧‧ front side of the substrate holder

4‧‧‧基板 4‧‧‧Substrate

5‧‧‧基板托架背側 5‧‧‧Back side of the substrate carrier

6‧‧‧間隔元件 6‧‧‧ spacer elements

6’‧‧‧間隔元件 6'‧‧‧ spacer elements

7‧‧‧插座模組 7‧‧‧ socket module

8‧‧‧連接元件 8‧‧‧Connecting components

A‧‧‧連接方向 A‧‧‧ Connection direction

B‧‧‧剖面 B‧‧‧ profile

b‧‧‧剖面 B‧‧‧ section

C‧‧‧距離 C‧‧‧ distance

L‧‧‧長度 L‧‧‧ length

D‧‧‧厚度 D‧‧‧thickness

H‧‧‧高度 H‧‧‧ Height

本發明之有利實施例,其結構、功能以及益處藉由圖示之方式在以下舉例說明,其中圖1 示意性地闡示根據基板處理設備之實施例的基板托架的俯視圖,該基板處理設備根據本發明具有在基板托架背側上被提供之單間隔元件;圖2 示意性地闡示根據基板托架之另一實施例的基板托架的俯視圖,該基板托架根據本發明具有在基板托架背側上被提供之多個間隔元件;以及圖3 示意性地闡示根據本發明具有基板托架和回火裝置以及被安排在之間的間隔元件的基板處理設備之實施例的側視圖。 Advantageous embodiments of the present invention, its structure, function, and benefits are exemplified by way of illustration, in which FIG. 1 schematically illustrates a top view of a substrate carrier according to an embodiment of a substrate processing apparatus, the substrate processing apparatus According to the invention there is a single spacer element provided on the back side of the substrate carrier; FIG. 2 schematically illustrates a top view of a substrate holder according to another embodiment of the substrate carrier, the substrate holder having a plurality of spacer elements provided on the back side of the substrate carrier; and FIG. 3 schematically illustrates an embodiment of a substrate processing apparatus having a substrate carrier and a tempering device and spacer elements disposed therebetween in accordance with the present invention Side view.

在圖1中,闡示在基板處理設備之實施例的基板托架1之基板托架背側5的示意性俯視圖。根據此實施例,恰好一間隔元件6存在於基板托架背側5,在闡示實施例中在截面中被形成作為具有4間隙的圓形環。存在之間隔元件6包含外徑,其等於約基板托架1之側邊長度的三分之二。在區域中形成間隔元件6的寬度之間隔元件6之外徑與一內徑的差較佳係在1mm和30mm之間,特別較佳為10mm和25mm之間。 In Fig. 1, a schematic plan view of the back side 5 of the substrate holder of the substrate holder 1 of the embodiment of the substrate processing apparatus is illustrated. According to this embodiment, exactly one spacer element 6 is present on the back side 5 of the substrate carrier, which in the illustrated embodiment is formed as a circular ring with 4 gaps in cross section. The spacer element 6 present comprises an outer diameter which is equal to about two-thirds of the length of the side of the substrate carrier 1. The difference between the outer diameter of the spacer element 6 forming the width of the spacer element 6 in the region and an inner diameter is preferably between 1 mm and 30 mm, particularly preferably between 10 mm and 25 mm.

如圖1所示,間隔元件6也可以包含凹部和/或間隙。間隔元件6可以包含與回火裝置2或基板托架1之不同的熱膨脹。由於間隙、以及間隔元件6的窄寬度,因為不同熱膨脹而接著發生的變形可以被避免。而且,代替一間隔元件6,圓形環或圓弧形狀的數個間隔元件6,可以在基板托架背側5上彼此同心地被安排。如此,間隔元件6可以形成基板托架1和在圖1中未描繪之回火裝置2之間均勻的距離C,從而實現基板托架1中均勻的溫度分佈。此外,由於間隔元件發生基板托架1之延遲回火,回火裝置2和基板托架1之間的熱傳遞藉由間隔元件如此被節流。 As shown in Figure 1, the spacer element 6 can also comprise recesses and/or gaps. The spacer element 6 may comprise a different thermal expansion than the tempering device 2 or the substrate carrier 1. Due to the gap, as well as the narrow width of the spacer element 6, subsequent deformations due to different thermal expansions can be avoided. Moreover, instead of a spacer element 6, a plurality of spacer elements 6 of a circular ring or arc shape may be arranged concentrically with each other on the back side 5 of the substrate carrier. As such, the spacer element 6 can form a uniform distance C between the substrate carrier 1 and the tempering device 2 not depicted in FIG. 1, thereby achieving a uniform temperature distribution in the substrate carrier 1. Furthermore, since the spacer element causes delayed tempering of the substrate carrier 1, the heat transfer between the tempering device 2 and the substrate carrier 1 is throttled by the spacer element.

在圖1中所闡示之實施例中,二插座模組7被安排在基板托架1之二相對側的每側上,其每一個經由具有基板托架1之連接元件8被連接。或者,沿著基板托架1之長度多於二插座模組7之使用係為可能,以為了避免基板托 架1之撓曲,例如沿著基板托架1之長度可以安排八到十插座模組7。相較具有截面b之插座模組7,連接元件8包含在基板托架1和相對應插座模組7之間一連接方向A中的更小截面B,如此可以被形成例如桿形或柱形。而且,連接元件8之長度L在連接方向A中較相對應插座模組7之長度I更大。由於連接元件8的此幾何形狀,從基板托架1到插座模組7的熱傳遞被有效地減少。正軌或其他傳送機制可以與插座模組7結合,以為了基板托架1例如通過基板處理腔室被移動。 In the embodiment illustrated in FIG. 1, two socket modules 7 are arranged on each side of the opposite side of the substrate carrier 1, each of which is connected via a connecting element 8 having a substrate carrier 1. Alternatively, it is possible to use more than two socket modules 7 along the length of the substrate holder 1 in order to avoid substrate support. The deflection of the frame 1, for example, eight to ten socket modules 7 can be arranged along the length of the substrate carrier 1. Compared to the socket module 7 having the section b, the connecting element 8 comprises a smaller section B in a connecting direction A between the substrate carrier 1 and the corresponding socket module 7, so that it can be formed, for example, in the shape of a rod or a cylinder. . Moreover, the length L of the connecting element 8 is greater in the connecting direction A than the length I of the corresponding socket module 7. Due to this geometry of the connecting element 8, heat transfer from the substrate carrier 1 to the socket module 7 is effectively reduced. A positive rail or other transfer mechanism can be combined with the socket module 7 for movement of the substrate carrier 1 for example, through the substrate processing chamber.

在圖2中,闡示根據本發明之基板處理設備之另一實施例的基板托架1之基板托架背側5的俯視圖。為了形成基板托架1和在此圖形中未描繪的回火裝置2之間均勻距離C,數個間隔元件6’被安排在基板托架背側5。在此的間隔元件6’各自包含圓形截面。或者,可以理解的是該間隔元件6’之其他截面幾何圖形,例如包含通孔/凹部的圓形、矩形、三角形、八角形或任何其他形式的多邊形、橢圓或其他。此外,如圖1中所闡釋之相同特徵和功能被提供給插座模組7和連接元件8。 In Fig. 2, a plan view of the substrate carrier back side 5 of the substrate carrier 1 of another embodiment of the substrate processing apparatus according to the present invention is illustrated. In order to form a uniform distance C between the substrate carrier 1 and the tempering device 2 not depicted in this figure, a plurality of spacer elements 6' are arranged on the substrate carrier back side 5. The spacer elements 6' here each comprise a circular cross section. Alternatively, it is to be understood that other cross-sectional geometries of the spacer element 6', such as circles, rectangles, triangles, octagons or any other form of polygons, ellipses or other, comprising through holes/recesses. Furthermore, the same features and functions as illustrated in Figure 1 are provided to the socket module 7 and the connecting element 8.

根據圖2的實施例優於根據圖1的第一實施例,基板托架1和回火裝置2之間的均勻距離C也可以被形成在周邊區域以及中心區域。根據依照圖1之實施例,可以理解的是基板托架1在藉由間隔元件6的移除區域中偏轉向回火裝置2,使得基板托架1和回火裝置之間的均勻距離C在所有的位置中都不相同。在根據圖2之實施例中,此可 藉由安排間隔元件6’均勻地橫越分佈在基板托架背側5來避免,從而即使在基板托架1之周邊區域和中心區域,到回火裝置2之均勻距離C可以被形成。 The embodiment according to Fig. 2 is superior to the first embodiment according to Fig. 1 in that a uniform distance C between the substrate carrier 1 and the tempering device 2 can also be formed in the peripheral region as well as in the central region. According to the embodiment according to Fig. 1, it can be understood that the substrate carrier 1 is deflected towards the tempering device 2 in the removal region by the spacer element 6 such that the uniform distance C between the substrate carrier 1 and the tempering device is All locations are different. In the embodiment according to Fig. 2, this can This is avoided by arranging the spacer elements 6' to be evenly distributed across the back side 5 of the substrate carrier, so that even in the peripheral region and the central region of the substrate carrier 1, a uniform distance C to the tempering device 2 can be formed.

圖1和2之實施例的替代,其也可以不用進一步費力理解且因而無具體地以圖形描繪,間隔元件6、6’被安排在回火裝置2面向基板托架1的側上,而不是在基板托架背側5上。 An alternative to the embodiment of Figures 1 and 2, which can also be omitted without further effort and thus not specifically depicted, the spacer elements 6, 6' are arranged on the side of the tempering device 2 facing the substrate carrier 1, instead of On the back side 5 of the substrate carrier.

在圖3中,闡示根據圖2之第二實施例上的側視圖。在回火裝置2和基板托架1的基板托架背側5之間,數個間隔元件6’被均勻的安排分佈,其包含高度H。由於此,均勻距離C被形成在回火裝置2和基板托架1之間。基板托架1包含在8mm和21mm之間區域中的厚度D,較佳為10mm和15mm之間,特別較佳為11mm和13mm之間,其導致基板托架1之足夠的剛性,使得其不會彎曲變形。大於21mm之基板托架1的更大厚度D對於基板4之快速回火係為不利,這是由於因而基板托架1的大量材料需要被回火。對於特定應用,大於21mm之基板托架的厚度D也可以係為有利的,這是由於即使是在回火關閉後基板托架1如此可以保持校正的溫度,其較具有8mm和21mm之間的厚度D之薄基板托架1、特別是具有小於15mm之基板托架1之厚度D有更長的時間。具有大於200cm之長度和/或寬度之基板托架1,其大於21mm之基板托架1的厚度D也可以係為有利的。 In Fig. 3, a side view according to a second embodiment of Fig. 2 is illustrated. Between the tempering device 2 and the substrate carrier back side 5 of the substrate carrier 1, a plurality of spacer elements 6' are evenly distributed, including a height H. Due to this, a uniform distance C is formed between the tempering device 2 and the substrate holder 1. The substrate holder 1 comprises a thickness D in the region between 8 mm and 21 mm, preferably between 10 mm and 15 mm, particularly preferably between 11 mm and 13 mm, which results in sufficient rigidity of the substrate holder 1 so that it does not Will bend and deform. A larger thickness D of the substrate holder 1 larger than 21 mm is disadvantageous for the rapid tempering of the substrate 4 because a large amount of material of the substrate holder 1 needs to be tempered. For a particular application, the thickness D of the substrate carrier greater than 21 mm may also be advantageous, since the substrate carrier 1 can maintain a corrected temperature, even after tempering, which is between 8 mm and 21 mm. The thin substrate holder 1, which has a thickness D, has a thickness D of the substrate holder 1 having a thickness of less than 15 mm for a longer period of time. A substrate holder 1 having a length and/or width greater than 200 cm, which may have a thickness D greater than 21 mm, may also be advantageous.

在基板托架1之一基板托架前側3上,數個基板4被 安排。基板4應該與基板托架1處於熱平衡,使得基板4可以藉由回火裝置2直接地被加熱和/或冷卻。如此,基板4可以被調整到基板處理過程中期望的溫度。例如,基板可以將諸如矽晶圓之半導體基板應用到基板托架1。 On the front side 3 of the substrate holder 1 of the substrate holder 1, a plurality of substrates 4 are arrangement. The substrate 4 should be in thermal equilibrium with the substrate carrier 1 such that the substrate 4 can be directly heated and/or cooled by the tempering device 2. As such, the substrate 4 can be adjusted to the desired temperature during substrate processing. For example, the substrate can apply a semiconductor substrate such as a germanium wafer to the substrate carrier 1.

從基板托架背側5,連接元件8側向地延伸到插座模組7,並連接其到基板托架1。或者其也可以理解的是,連接元件8被側向安排在基板托架1、或被放置在基板托架1之基板接觸區域外側之另一區域上。在圖3所闡示之實施例中,連接元件8包含在每一個情況中基板托架1和各自的插座模組7之間90°的二偏轉。因此,連接元件8包含較沿著連接方向A之基板托架1和各自的插座模組7之間的可能直接連接更大的長度L。由於連接元件8之增加的長度L,藉由連接元件8之熱傳導性被減少,從而基板托架1和插座模組7之間的熱傳遞被最小化。如此,在連接元件8之位置避免形成在基板托架1中的散熱體。 From the back side 5 of the substrate carrier, the connecting element 8 extends laterally to the socket module 7 and connects it to the substrate carrier 1. Alternatively, it can also be understood that the connecting element 8 is arranged laterally on the substrate carrier 1, or on another area outside the substrate contact area of the substrate carrier 1. In the embodiment illustrated in Figure 3, the connecting element 8 comprises a two-degree deflection of 90° between the substrate carrier 1 and the respective socket module 7 in each case. Thus, the connecting element 8 comprises a greater length L than the possible direct connection between the substrate carrier 1 and the respective socket module 7 along the connection direction A. Due to the increased length L of the connecting element 8, the thermal conductivity by the connecting element 8 is reduced, so that heat transfer between the substrate carrier 1 and the socket module 7 is minimized. In this way, the heat sink formed in the substrate holder 1 is avoided at the position of the connecting member 8.

1‧‧‧基板托架 1‧‧‧Substrate bracket

2‧‧‧回火裝置 2‧‧‧tempering device

3‧‧‧基板托架前側 3‧‧‧ front side of the substrate holder

4‧‧‧基板 4‧‧‧Substrate

5‧‧‧基板托架背側 5‧‧‧Back side of the substrate carrier

6’‧‧‧間隔元件 6'‧‧‧ spacer elements

7‧‧‧插座模組 7‧‧‧ socket module

8‧‧‧連接元件 8‧‧‧Connecting components

C‧‧‧距離 C‧‧‧ distance

D‧‧‧厚度 D‧‧‧thickness

H‧‧‧高度 H‧‧‧ Height

Claims (11)

一種基板處理設備,其用於處理具有板狀基板托架(1)和被平行安排於該基板托架(1)之至少一板狀回火裝置(2)之基板,其中該基板托架(1)包含用於應用至少一層狀基板(4)之基板托架前側(3)和面對該回火裝置(2)之基板托架背側(5),其特徵在於在該基板托架背側(5)上和/或在一面對該基板托架(1)的該回火裝置(2)之表面上,用於形成距離(C)於該基板托架(1)和該回火裝置(2)之間的至少一間隔元件(6、6’)被提供。 A substrate processing apparatus for processing a substrate having a plate-like substrate holder (1) and at least one plate-like tempering device (2) arranged in parallel to the substrate holder (1), wherein the substrate holder ( 1) comprising a substrate holder front side (3) for applying at least one layer substrate (4) and a substrate holder back side (5) facing the tempering device (2), characterized in that the substrate holder is On the back side (5) and/or on the surface of the tempering device (2) of the substrate holder (1) for forming a distance (C) on the substrate holder (1) and the back At least one spacer element (6, 6') between the fire devices (2) is provided. 如申請專利範圍第1項所述之基板處理設備,其中用於形成該間隔(C)於該基板托架(1)和該回火裝置(2)之間的許多該間隔元件(6、6’)被提供。 The substrate processing apparatus of claim 1, wherein the spacer element (6, 6) for forming the spacer (C) between the substrate holder (1) and the tempering device (2) ')Provided. 如申請專利範圍第1或2項所述之基板處理設備,其中該至少一間隔元件(6、6’)之該材料包含較該基板托架(1)之該材料低的熱傳導性。 The substrate processing apparatus of claim 1 or 2, wherein the material of the at least one spacer element (6, 6') comprises a lower thermal conductivity than the material of the substrate holder (1). 如申請專利範圍第1至3項之至少一項所述之基板處理設備,其中該至少一間隔元件(6、6’)從該基板托架(1)和/或從該回火裝置(2)藉由0.1mm和1mm之間的高度(H)突起。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the at least one spacer element (6, 6') is from the substrate holder (1) and/or from the tempering device (2) ) by a height (H) protrusion between 0.1 mm and 1 mm. 如申請專利範圍第1至4項之至少一項所述之基板處理設備,其中該至少一間隔元件(6、6’)包含可變高度(H)。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the at least one spacer element (6, 6') comprises a variable height (H). 如申請專利範圍第1至5項之至少一項所述之基板處理設備,其中該基板托架(1)係由至少一導電性材料組成和/或以至少一導電性材料塗覆。 The substrate processing apparatus according to any one of claims 1 to 5, wherein the substrate holder (1) is composed of at least one electrically conductive material and/or coated with at least one electrically conductive material. 如申請專利範圍第1至6項之至少一項所述之基板處理設備,其中在該基板托架前側(3)和該基板托架背側(5)之間的該基板托架(1)包含8mm和21mm之間的厚度(D)。 The substrate processing apparatus according to any one of claims 1 to 6, wherein the substrate holder (1) between the front side (3) of the substrate holder and the back side (5) of the substrate holder Contains a thickness (D) between 8mm and 21mm. 如申請專利範圍第1至7項之至少一項所述之基板處理設備,其中該基板托架背側(5)包含表面修正和/或表面塗層,從而該表面修正和/或該表面塗層較該基板托架(1)之基本材料吸收更多熱輻射。 The substrate processing apparatus according to any one of claims 1 to 7, wherein the substrate carrier back side (5) comprises a surface correction and/or a surface coating such that the surface correction and/or the surface coating The layer absorbs more heat radiation than the base material of the substrate carrier (1). 如申請專利範圍第1至8項之至少一項所述之基板處理設備,其中在該基板托架(1)上用於運行軌道之調節的至少一插座模組(7)被提供。 The substrate processing apparatus according to any one of claims 1 to 8, wherein at least one socket module (7) for adjusting the running track on the substrate holder (1) is provided. 如申請專利範圍第9項所述之基板處理設備,其中該至少一插座模組(7)藉由至少一連接元件(8)和該基板托架(1)連接,其中在該基板托架(1)和該插座模組(7)之間的一連接方向(A)上的該連接元件(8)包含較該插座模組(7)小的剖面(B)和/或較該插座模組(7)大的長度(L)。 The substrate processing apparatus of claim 9, wherein the at least one socket module (7) is connected to the substrate holder (1) by at least one connecting component (8), wherein the substrate carrier ( 1) The connecting element (8) in a connecting direction (A) with the socket module (7) comprises a smaller cross section (B) than the socket module (7) and/or a socket module (7) Large length (L). 如申請專利範圍第9或10項所述之基板處理設備,其中該至少一插座模組(7)和/或該連接元件(8)係由包含較該基板托架(1)之該材料低的熱傳導性之材料或材料化合物所組成。 The substrate processing apparatus of claim 9 or 10, wherein the at least one socket module (7) and/or the connecting component (8) is lower than the material comprising the substrate carrier (1) A material consisting of a thermally conductive material or a material compound.
TW105124488A 2015-08-24 2016-08-02 Substrate processing device TW201729332A (en)

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